KR102586831B1 - Display panel, manufactuing method of panel, and forming method of pattern thereof - Google Patents

Abstract

A display panel manufacturing method disclosed in an embodiment of the invention includes a display panel having a transparent support member, a thin film transistor portion on an upper part of the transparent support member, and a plurality of LED chips, an upper pad formed in an edge area of the upper surface of the support member. and forming a wiring portion connected to at least one of the lower pads formed in the edge area of the lower surface, wherein the step of forming the wiring portion includes forming the wiring portion using an activated metal material and a gas using plasma generated by a laser beam. can do.

Description

Display panel, its manufacturing method and pattern formation method {DISPLAY PANEL, MANUFACTUING METHOD OF PANEL, AND FORMING METHOD OF PATTERN THEREOF}

Embodiments of the invention relate to a light source module having micro LED, a display panel, and a method of manufacturing the same.

Embodiments of the invention relate to a method of cutting a display panel with micro LEDs.

Embodiments of the invention relate to a display panel and a method of forming a pattern thereof.

Embodiments of the invention relate to a method of forming a pattern on a wafer or substrate having a thin film transistor portion.

Conventional display devices mainly consist of a display panel consisting of a liquid crystal display (LCD) and a backlight, but recently, semiconductor devices such as light emitting diodes (LED) are used as one pixel. Display devices using such LEDs are being developed in a form that does not require a separate backlight. In addition, display devices using these LEDs can not only be compact, but also implement high-brightness displays with superior luminous efficiency compared to existing LCDs. In addition, since the aspect ratio of the display screen can be freely changed and implemented in a large area, it can be provided as a large display in various forms.

In advertising and screen displays in public places, the demand for large screens is increasing, and LED is used as a display method for large screens. This is because, compared to display means using a conventional liquid crystal light emitting panel, it is easy to enlarge, consumes less electrical energy, and has a long lifespan with low maintenance costs. Recently, large-scale display means using LEDs have been used in various places such as TVs, monitors, stadium electronic signs, outdoor advertisements, indoor advertisements, public signs, and information displays, and their construction methods are also diverse.

Embodiments of the invention can provide a method of cutting a unit panel using laser etching at low temperature.

Embodiments of the invention may provide a panel having a pattern connecting pads on the top and bottom surfaces of a wafer or circuit board (top, bottom, or side), or a method of forming the pattern.

Embodiments of the invention may provide a panel having a connection pattern extending laterally and/or vertically penetrating pads on the top and bottom surfaces at the outer portion (or edge) of a wafer or circuit board, or a method of manufacturing the same.

An embodiment of the invention is to form a concave wiring area (i.e., an opening) on the outer side of a wafer or circuit board having a plurality of light emitting diode chips to connect the pads on the upper and lower surfaces, and to apply laser metal powder to the wiring area. A panel fused with and a method of manufacturing the same can be provided.

An embodiment of the invention provides a display panel having a wiring portion and a passivation layer having a connection pattern between the edge side upper and lower pads on a wafer or circuit board having a plurality of light emitting diode chips and a thin film transistor portion, and a method of forming the pattern. You can.

A method of manufacturing a display panel according to an embodiment of the invention includes a display panel having a transparent support member, a thin film transistor portion on an upper part of the transparent support member, and a plurality of LED chips, and an upper portion formed in an edge area of the upper surface of the support member. It includes forming a wiring portion connected to at least one of the pad and the lower pad formed in the edge area of the lower surface, wherein the forming of the wiring portion comprises forming an activated metal material and a gas using plasma generated by a laser beam. Can be wired.

According to the invention, the step of forming the wiring portion can be formed in one process and connect the upper pad and the lower pad to each other. When the wiring portion is formed, a step of forming a passivation layer may be included to protect the wiring portion and prevent oxidation.

A display panel manufacturing method according to an embodiment of the invention includes a display panel having a transparent support member, a thin film transistor unit on an upper part of the transparent support member, and a plurality of LED chips, and an edge region and side surface of the upper and lower surfaces of the support member. forming an opening in at least one of; And forming a wiring part in the opening to connect the upper pad and the lower pad of the support member, wherein the wiring part is formed through a process of fusing activated gas and conductive metal powder with a laser beam. can be formed. At this time, the wiring unit may be implemented as a three-dimensional or three-dimensional wiring. Formation of the wiring portion may include a process of directly fusing metal powder to the surface of the panel.

An embodiment of the invention is to fuse conductive or metal powder to the surface (top, side or bottom) of glass or a support member or the surface of a pad using a laser beam directly according to a three-dimensional design to form a wiring pattern. I can give it. In addition, in an embodiment of the invention, before forming the wiring pattern, a drain portion or a concave opening is formed on the surface of the support member with a primary laser beam, and then conductive or metal powder is applied to the drain portion or opening with a secondary laser beam. It can be directly fused with a laser beam according to a 3D design and formed into a wiring pattern.

According to an embodiment of the invention, it includes the step of cutting a plurality of display panels on the support member into unit sizes, wherein the cutting step uses plasma generated by a gas activated in a low-temperature vacuum chamber and a laser beam. can do.

According to an embodiment of the invention, the wiring area forming step forms a plurality of openings penetrating from the upper pad to the lower pad of the support member, and the wiring portion forming step forms the wiring region forming step from the upper pad to the lower pad of the support member. ejecting activated metal powder into a plurality of penetrating openings; and irradiating a laser beam using a laser module toward the metal powder distributed on the opening to fuse the metal powder to the surface of the support member to form a wiring portion.

According to an embodiment of the invention, the wiring region forming step forms a plurality of concave openings in at least one of the upper pad and the lower pad of the support member, and the wiring portion forming step includes applying activated metal powder to the opening. Step of exiting; And it may include forming a wiring portion by irradiating a laser beam toward the metal powder distributed on the opening to melt the metal powder.

A display panel according to an embodiment of the invention includes a transparent support member, a thin film transistor unit on an upper part of the transparent support member, and a plurality of LED chips, an upper pad formed on an edge area of the upper surface of the support member, and a lower surface. a lower pad formed in an edge area of and a plurality of openings formed in at least one of the surfaces (top, bottom, or side) of the support member; It includes a wiring portion formed along the opening to connect the upper pad and the lower pad, and the wiring portion can be fused with metal melted by a laser beam to the surface of the support member.

According to an embodiment of the invention, the wiring portion is formed of a metal different from the material of the upper pad and the lower pad, and the width of the wiring portion may be narrower than the width of the upper pad.

According to an embodiment of the invention, the opening may include an area where the upper pad or the lower pad is partially etched, and a concave area inside the surface of the support member through the upper and lower pads.

The method of manufacturing a display panel according to an embodiment of the invention can be wired by three-dimensionally fusing activated metal powder to the surface of a flat or three-dimensional (3D) support member, or to the opening of a concave or penetrating support member. . Once the wiring is formed, the method may include forming a passivation layer to protect the wiring and prevent oxidation.

*An embodiment of the invention can improve the reliability of the cut portion of the panel by cutting the substrate into unit sizes using plasma generated by a laser beam in a low-temperature vacuum. In addition, thermal shock transmitted to parts or pads due to cutting can be minimized, chambering is unnecessary, and concerns about chipping or particles can be reduced.

Embodiments of the invention enable easy and simple work on a substrate by processing the wiring formation area or pattern formation area of the panel using a laser.

Embodiments of the invention can perform a wiring or pattern formation process after a substrate cutting process using a laser beam in a low-temperature vacuum, thereby simplifying the process.

Embodiments of the invention can connect pads on the upper and lower surfaces of a wafer or circuit board with a connection pattern using a laser beam and conductive powder.

Embodiments of the invention can provide a pattern with improved tolerance by forming a connection pattern using metal powder or conductive powder.

Embodiments of the invention can reduce the heat treatment process by reacting metal or conductive powder with a laser to form a pattern on the side of the wafer or substrate, inside the through hole, or/and on the surface of the substrate.

An embodiment of the invention can provide a high-purity, high-adhesion, low-resistance connection wiring by fusing nano-sized conductive powder activated in a room temperature and atmospheric pressure environment to the surface of the substrate with a laser beam. Additionally, there is the effect of being able to adjust the wiring width by beam spot.

An embodiment of the invention reacts metal or conductive powder with a laser to form a connection pattern on the surface of a wafer or circuit board, thereby eliminating the need for an additional cleaning process.

Additionally, embodiments of the invention allow the use of various metal raw materials by reacting metal or conductive powder with a laser to form a wiring pattern on the side, inner surface, or surface of a wafer or circuit board.

In addition, an embodiment of the invention provides metal or conductive powder mixed with a carrier gas, thereby enabling control of the thickness of the connection pattern and control of the process time.

In addition, the embodiment of the invention can simplify the process because it is easy to control the tolerance of the connection pattern and uses dry raw materials.

Additionally, in an embodiment of the invention, by using metal powder, the oxide film on the connection wiring can be removed, the powder can provide a dispersion effect, and crystallization between metals can be prevented.

In addition, embodiments of the invention can improve the reliability of the display panel by forming the above connection pattern on a substrate or wafer having a plurality of light emitting diode chips and a thin film transistor unit.

1 and 2 are diagrams showing examples of cutting a display panel having a plurality of LED chips according to an embodiment of the present invention.
Figure 3 is a front view showing an example of a display panel according to an embodiment of the invention.
Figure 4 is an example of a rear view of the display panel of Figure 3.
FIG. 5 is a diagram illustrating an example of the TFT of the LED chip and circuit board in FIG. 3.
Figures 6a (A)-(C) are a first example showing the process of forming a pattern on the upper or lower surface of a circuit board or support member in the present invention.
Figures 6b (A)-(C) are a second example showing the process of forming a pattern on the upper or lower surface of a circuit board or support member in the invention.
Figures 7 (A)-(D) are a third example showing the process of forming a pattern on the upper or lower surface of a circuit board or support member in the invention.
8A (A)-(D) are another example shown on a plan view showing the process of forming a wiring portion on the circuit board or support member of the present invention.
(A)-(D) in FIG. 8B are perspective views showing the process of forming the wiring portion of FIG. 8A.
(A) and (B) in FIG. 8C are another example of forming the wiring portion of FIG. 8A.
Figures 9(A)-(D) are diagrams showing a fourth example of forming a pattern on a substrate in the present invention.
Figures 10(A)(B) are cross-sectional side views of a display panel and their arrangement according to an embodiment of the invention.
Figure 11 (A) (B) is a side cross-sectional view of a display panel according to a comparative example and a diagram showing the form of their arrangement.
Figure 12a is a cross-sectional view showing an example of forming a pattern on an inclined surface of a circuit board or support member in the present invention.
Figure 12b is a cross-sectional view showing an example of forming a pattern through the curved surface of a circuit board or support member in the present invention.
Figure 12c is a cross-sectional view showing an example of wiring penetrating through the inclined upper and lower surfaces of a circuit board or support member in the present invention.
Figure 13 is a diagram showing the cutting and pattern forming process of the substrate in the invention.
FIG. 14 is a diagram of a system illustrating the wiring formation area of the substrate in FIG. 13.
FIG. 15 is a diagram of a system for forming the pattern of the substrate in FIG. 13.
Figure 16 is a diagram for explaining the process of forming a pattern on a substrate in the present invention.
Figure 17 is a side cross-sectional view showing an example of a display panel on which a pattern is formed according to an embodiment of the invention.
FIG. 18 is a diagram showing the pattern of the edge area of the display panel in FIG. 17.
Figure 19 is a side cross-sectional view showing another example of a display panel on which a pattern is formed according to an embodiment of the invention.
FIG. 20 is a diagram showing the pattern of the edge area of the display panel in FIG. 19.
Figures 21 to 23 are diagrams showing a heat affected zone (HAZ) area and a metal pattern burning area resulting from cutting circuit boards of a comparative example.
Figures 24 and 25 are diagrams showing the burning area around the cutting line according to laser cutting in the circuit board or support member of a comparative example.
Figure 26 is a detailed view showing a side view of a circuit board according to cutting according to an embodiment of the invention.

The advantages and features of the present invention and methods for achieving them will become clear by referring to the embodiments described in detail below along with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and will be implemented in various different forms. These embodiments only serve to ensure that the disclosure of the present invention is complete and that common knowledge in the technical field to which the present invention pertains is not limited. It is provided to fully inform those who have the scope of the invention, and the present invention is only defined by the scope of the claims.

The shapes, sizes, proportions, angles, numbers, etc. disclosed in the drawings for explaining embodiments of the present invention are illustrative, and the present invention is not limited to the matters shown. Like reference numerals refer to like elements throughout the specification. Additionally, in describing the present invention, if it is determined that a detailed description of related known technologies may unnecessarily obscure the gist of the present invention, the detailed description will be omitted. When 'includes', 'has', 'consists of', etc. mentioned in this specification are used, other parts may be added unless 'only' is used. When a component is expressed in the singular, the plural is included unless specifically stated otherwise. When interpreting a component, it is interpreted to include the margin of error even if there is no separate explicit description. In the case of a description of a positional relationship, for example, if the positional relationship of two parts is described as 'on top', 'on the top', 'on the bottom', 'next to', etc., 'immediately' Alternatively, there may be one or more other parts placed between the two parts, unless 'directly' is used.

In the case of a description of a temporal relationship, for example, if a temporal relationship is described as 'after', 'successfully after', 'after', 'before', etc., 'immediately' or 'directly' Unless used, non-consecutive cases may also be included. Although first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are merely used to distinguish one component from another. Accordingly, the first component mentioned below may also be the second component within the technical spirit of the present invention.

Each feature of the various embodiments of the present invention can be combined or combined with each other, partially or entirely, and various technological interconnections and operations are possible, and each embodiment can be implemented independently of each other or together in a related relationship. It may be possible.

Hereinafter, the present invention will be described in detail with reference to the attached drawings.

Figures 1 and 2 are diagrams showing an example of cutting a display panel having a plurality of LED chips according to an embodiment of the invention, Figure 3 is a front view showing an example of a display panel according to an embodiment of the invention, and Figure 4 is a Figure 3 is an example of a rear view of the display panel, Figure 5 is a diagram explaining an example of the LED chip and the TFT of the circuit board in Figure 3, and Figures 6A (A)-(C) show patterns formed on the board in the invention. This is a first example showing the process, and (A)-(C) in Figure 6b is a second example showing the process of forming a pattern on a substrate in the invention, and (A)-(D) in Figure 7 is a process for forming a pattern on a substrate in the invention. This is a third example showing the process of forming a pattern, and Figures 8A and 8B (A) - (D) are another example shown in a plan view and perspective view showing the process of forming a wiring portion on the circuit board or support member of the invention. , (A) and (B) in FIG. 8C are another example of forming the wiring portion of FIG. 8A. Figures 9 (A) - (D) are diagrams showing a fourth example of forming a pattern on a circuit board or support member in the invention, and Figures 10 (A) (B) are diagrams of a display panel according to an embodiment of the invention. It is a diagram showing a side cross-sectional view and their arrangement form, and Figures 11 (A) and (B) are a diagram showing a side cross-sectional view of a display panel according to a comparative example and its arrangement form, and Figure 12a is a diagram showing the diameter of the circuit board in the invention. It is a cross-sectional view showing an example of forming a pattern on the surface of a photograph. Figure 12b is a cross-sectional view showing an example of forming a pattern through the curved surface of a circuit board in the present invention, and Figure 12c is a cross-sectional view showing an example of forming a pattern through the curved surface of the circuit board in the present invention. This is a cross-sectional view showing an example of wiring.

Referring to Figures 1 and 2, thin film transistors (TFTs) and LED chips are mounted in individual display areas (A1) on one surface (or upper surface) of the support member 1, and wiring patterns for driving them are formed, A driver IC or various components for driving the LED chip or TFT may be mounted on the other side (or back side) of the support member 1. This support member 1 is cut into display panels 11, 12, 13, and 14 of unit size through cutting lines C1 and C2.

The support member 1 is a support layer of each display panel 11, 12, 13, and 14 or a support layer of a circuit board, and may include at least one of plastic material, glass material, ceramic material, or metal. The support member 1 may be formed of an insulating film made of a transparent or non-transparent material. The support member 1 may be a flexible substrate with a pattern formed on the top/bottom or a non-flexible substrate.

The size of each display panel (11, 12, 13, 14) can be implemented in a size suitable for various application fields, such as a wristwatch, a mobile phone terminal, a tiling-type monitor or TV, a large TV, or a single panel for a billboard. . For example, the size of each display panel 11, 12, 13, and 14 may be 2 inches or more, but is not limited thereto.

Here, the boundary portion between adjacent display panels 11, 12, 13, and 14 is the portion where the support member 1 is cut into individual panel sizes. When the cutting process is performed with a laser beam at room temperature as before, the laser beam There is a problem of thermal shock or destruction of elements or components due to the high heat coming from the device, and also the problem of deterioration of various wiring adjacent to the cutting line may occur.

In an embodiment of the invention, cutting is performed along the cutting lines (C1, C2) by a laser beam in a low-temperature vacuum chamber. Accordingly, thermal shock can be minimized in the edge areas (A2, A3) of the individual support members (1), and deterioration of the TFT, LED chip, various components and wiring can be reduced. In addition, damage to the side of the cut support member (1) can be minimized and the gap between the pad and the side can be reduced.

Here, the low-temperature vacuum chamber is a chamber in an environment ranging from 0 degrees to -50 degrees, and when gas is injected, a laser beam is irradiated. At this time, plasma is generated locally, and the cutting line (C1, Cutting is done along C2). At this time, since the cutting process is performed within a low-temperature vacuum chamber, problems caused by reaction with gases such as oxygen in the atmosphere can be reduced. The gas supplied from the low-temperature vacuum chamber may be selected and controlled, and may include at least one or both of an inert gas and a fluorine gas. The gas is, for example, at least one of N ₂ , Ar, He, CF ₄ , SF ₆ , NH ₃ , CF ₄ /H ₂ , CHF ₃ , C ₂ F ₆ , H ₂ , C ₂ H ₄ , CH ₄ and O ₂ may be included. Here, the oxygen content in the gas may be 0.1% or more, for example, in the range of 0.1% to 10%. Additionally, the type of gas can be selected and its content can be adjusted through the synthesis unit.

At this time, since cutting is performed by generating plasma with a laser beam in an environment within a low-temperature vacuum chamber, deterioration of parts, elements, pads, wiring, etc. due to cutting of the support member 1 can be reduced. In addition, it is possible to minimize surrounding heat damage (HAZ) due to high temperature during cutting, and reduce the heat damage area to an area of 20㎛ or less from the cutting lines (C1, C2). Therefore, the thermal reliability of the display panel or substrate can be improved. Additionally, since the process is carried out at a low temperature, the processing speed can be increased. Additionally, heat damage to the substrate is reduced, reducing cracks, chipping, and condensation due to humidity. Accordingly, since the substrates are precisely cut in a low-temperature vacuum chamber, the gap between panels can be reduced and processing tolerances can be minimized.

As shown in (A) (B) of FIG. 2, the cut display panel 11 may be divided into a central display area A1 and edge areas A2 and A3, which are non-display areas. Pads may be placed on the upper and lower surfaces of the edge area. This display panel 11 can supply power or perform various controls by electrically connecting the upper pad 31 and the lower pad 32, as shown in FIGS. 3 and 4. For this purpose, a pattern or wiring connecting the upper pad 31 and the lower pad 32 is formed. When metal is simply deposited on the surface of the support member 1 as before, the deposition force is low and after deposition The curing process can become complicated. Alternatively, there is currently a complicated problem of forming via holes by processing hundreds of via holes for each pad in each edge area and dispensing and hardening a metal material into each of the via holes.

3 and 4, the display panel 11 may have unit pixels having a TFT unit and a plurality of LED chips 2A, 2B, and 2C arranged in a matrix form on a circuit board 20. LED chips 2A, 2B, and 2C may be disposed in each subpixel of the unit pixels. The unit pixel may be implemented with LED chips (2A, 2B, 2C) that emit different colors, for example, at least three colors, or a combination of LED chips that emit the same color and sheets such as quantum dots or phosphors. there is. The unit pixel may emit red, green, and blue light. For example, the LED chips 2A, 2B, and 2C may include red (R), green (G), and blue (B) LED chips. . For example, the LED chips 2A, 2B, and 2C may include LED chips that emit the same color. The LED chips 2A, 2B, and 2C are micro-sized chips for subpixels, and for example, the length of one side may be in the range of 10㎛ to 100㎛. The size of the LED chips (2A, 2B, and 2C) may have a side length in the range of microscopic size (≤1㎛, or 1㎛-50㎛) depending on the LED chip micromanufacturing technology. For example, the size of the LED chips (2A, 2B, 2C) may range from 1㎛ to 50㎛ Х 1㎛ to 50㎛, but is not limited thereto.

Additionally, when multiple display panels 11 are in close contact, they can be tightly coupled so that they cannot be distinguished from the outside. That is, the display panels 11 may have an arrangement or combination structure in which dark lines do not occur at the boundary portion. The size of the display device having the display panels 11 may vary depending on the number of display panels 11 combined and the size of each panel. Additionally, each panel in the display device has a structure that can be combined, separated, or removed.

The circuit board 20 of the display panel uses a TFT array board capable of driving a plurality of LED chips 2A, 2B, and 2C. That is, the circuit board 20 is formed with a thin film transistor (TFT) unit 50 for driving a plurality of LED chips (2A, 2B, 2C) and various wiring, and when the thin film transistor is turned on, the wiring A driving signal input from the outside is applied to the LED chips (2A, 2B, 2C), and each LED chip emits light to create an image. The circuit board 20 may include a circuit, such as a thin film transistor, configured to independently drive subpixels, such as LED chips 2A, 2B, and 2C, arranged in each pixel area 2.

Each pixel area 2 of the circuit board 20 is arranged with at least three LED chips 2A, 2B, and 2C that emit monochromatic light of red, green, and blue, and the LEDs are turned on by a signal applied from the outside. Red, green, and blue colored light is emitted from the chip, allowing images to be displayed.

Before or after cutting the panel, a plurality of LED chips 2A, 2B, and 2C may be mounted in a process separate from the TFT array process of the circuit board 20. That is, the thin film transistor and various wiring disposed on the circuit board 20 are formed through a photo process, but the LED chips 2A, 2B, and 2C can be mounted through a separate bonding process or a reflow process.

Here, the configuration of the circuit board 20 having a thin film transistor and a plurality of LED chips 2A, 2B, and 2C disposed on the circuit board 20 may be defined as a light source module. The circuit board 20 may include a thin film transistor unit 50 connected to the LED chips 2A, 2B, and 2C. The circuit board 20 may be formed of a transparent support member 1 such as glass, and the thin film transistor unit 50 may be disposed on the front (ie, upper surface) of the support member 1. The LED chips 2A, 2B, and 2C may include a light-emitting structure that generates light, and first and second electrodes 105 and 106 (see FIG. 5). The LED chips 2A, 2B, and 2C may include a transparent substrate or a semiconductor substrate. The support member 1 may include at least one of plastic material, glass material, ceramic material, or metal. The support member 1 may be formed of an insulating film made of a transparent or non-transparent material. This support member 1 is provided with pads along the outer edge of the upper surface, and the provided pads are electrically connected to the pads provided on the lower surface of the support member 1, so that power or signals are supplied to the pads on the upper surface. You can.

3 and 4, a driver IC 19 and a lower pad 32 connected thereto may be disposed on the lower surface of the circuit board 20. The circuit board 20 connects the upper pad 31 and the lower pad 32 to the edge areas A2 and A3 of the upper and lower surfaces to the wiring portion 30 as shown in FIGS. 6 to 12 through a post-process. do. The upper pad 31 and the lower pad 32 may include at least two of Ti, Ni, Pt, TiN, Mo, Al, W, Cu, Ag, and Au.

Here, the upper pad 31 and the lower pad 32 may be formed of the same material or different materials. When the upper and lower pads 31 and 32 are multilayered, the first layer, which is the lowest layer, is an adhesive layer and may include at least one of Ti, Ni, TiN, Mo, and Pt, or an alloy having the above metal. The second layer disposed on the first layer may be made of a material for thermal and electrical conduction, for example, at least one of Al, Cu, W, or an alloy having a selected metal. The third layer disposed on the second layer may be made of the same material as the first layer or may be formed of at least one of Ti, Ni, TiN, Mo, and Pt. The fourth layer disposed on the third layer may be a transparent layer or may be formed as a metal bonding layer, and may be selected from, for example, at least one of ITO, Ag, or Au, or an alloy having the above metal. The fourth layer may be a layer for preventing oxidation.

The wiring portion 30 may electrically connect pads from the top to the bottom of the circuit board 20. The wiring portion 30 may extend along at least one side or two different sides of the circuit board 20 or the support member 1, or may penetrate the inside of the support member 1. The wiring unit 30 can directly wire activated metal powder to a display substrate with a two-dimensional or three-dimensional structure in a single process. This is because existing 3D wiring uses two or more processes to form a wiring pattern, which may increase the process or time.

The wiring unit 30 may vary depending on the number of pixels, and may have hundreds or more wires arranged. For example, at least 100 or 200 wires may be arranged in each edge area. As the number of these pixels increases, more precise wiring or more reliable panels are required, and there are limits to the wiring pattern for connection when using existing processes. The wiring unit 30 of the present invention can connect the upper pad 31 disposed on the upper surface of the circuit board 20 and the lower pad 32 disposed on the lower surface by irradiating a laser beam to metal powder.

As shown in FIG. 5, a light-transmitting cover 7 may be placed on the upper part of the circuit board 20 on which the LED chips 2A, 2B, and 2C are placed, and the light-transmitting cover 7 may cover the LED chips 2A, Light emitted from 2B, 2C) may be emitted. The transparent cover 7 may be made of glass or a soft or rigid plastic material, and may be a passivation layer or a protective cover. A transparent layer (7A) may be disposed between the LED chips (2A, 2B, 2C) and the light-transmitting cover (7), and the transparent layer (7A) may be made of a transparent resin material such as silicone or epoxy, or may be made of air. It could be a gap.

In the circuit board 20, the thin film transistor unit 50 is composed of a gate electrode 51, a semiconductor layer 53, a source electrode 55, and a drain electrode 57. A gate electrode 51 is formed on the circuit board 20, a gate insulating layer 49 is formed over the entire area of the circuit board 110 to cover the gate electrode 51, and a semiconductor layer 53 is formed on the gate. It is formed on the insulating layer 49, and the source electrode 55 and the drain electrode 57 are formed on the semiconductor layer 53.

The gate electrode 51 may be formed of metal such as Cr, Mo, Ta, Cu, Ti, Al or Al alloy, or an alloy thereof, and the gate insulating layer 49 may be made of an inorganic insulating material such as SiOx or SiNx. It may be made of a single layer or a plurality of layers made of SiOx and SiNx. The semiconductor layer 53 may be made of an amorphous semiconductor such as amorphous silicon, or an oxide semiconductor such as IGZO (Indium Gallium Zinc Oxide), TiO2, ZnO, WO ₃ , and SnO ₂ . When the semiconductor layer 53 is formed with an oxide semiconductor, the size of the thin film transistor (TFT) can be reduced, driving power can be reduced, and electrical mobility can be improved. Of course, in the present invention, the semiconductor layer of the thin film transistor is not limited to a specific material, and all types of semiconductor materials currently used in thin film transistors can be used.

The source electrode 55 and the drain electrode 57 may be made of metal such as Cr, Mo, Ta, Cu, Ti, Al, Al alloy, or an alloy thereof. At this time, the drain electrode 57 can be used as a first connection electrode to apply a signal to the LED chips 2A, 2B, and 2C. Meanwhile, in the drawing, the thin film transistor unit 50 is a bottom gate type thin film transistor, but the present invention is not limited to this specific structure of thin film transistor, but has various structures such as a top gate type thin film transistor. Thin film transistors may be applied.

A second connection electrode 59 is formed on the first insulating layer 41 in the display area A1. At this time, the second connection electrode 59 may be formed of metal such as Cr, Mo, Ta, Cu, Ti, Al, or Al alloy, or an alloy thereof, and the second connection electrode 59 (i.e., thin film transistor ( It can be formed by the same process as the drain electrode 57 of the TFT.

A first insulating layer 41 is formed on the circuit board 20 on which the thin film transistor unit 50 is formed, and LED chips 2A, 2B, and 2C are disposed on the first insulating layer 41 in the display area. At this time, in the drawing, a portion of the first insulating layer 114 may be removed and LED chips 2A, 2B, and 2C may be arranged on the removed area. The first insulating layer 41 may be composed of an organic layer such as a polyimide (PI) film or photoacrylic, or may be composed of a multi-layer structure such as an inorganic layer/organic layer or an inorganic layer/organic layer/inorganic layer.

First and second pads 61 and 63 may be disposed in the open area of the first insulating layer 41. The first pad 61 may be disposed on the first connection electrode 57 or may be a part of the material of the first connection electrode 57. The second pad 63 may be disposed on the second connection electrode 59 or may be a part of the material of the second connection electrode 59.

The first electrode 105 of the LED chips 2A, 2B, and 2C is disposed on the first pad 61 of the circuit board 20, and the second electrode 106 is disposed on the second pad 63. It can be placed on top. The first and second pads 61 and 63 are electrically connected to the thin film transistor through the first and second connection electrodes 57 and 59, and are connected to the first and second pads of the LED chips 2A, 2B, and 2C. It may be electrically connected to the second electrodes 105 and 106. Here, the first and second pads 61 and 63 may not include non-metallic materials. The first and second pads 61 and 63 may include at least two of Ti, Ni, Pt, TiN, Mo, Al, W, Cu, Ag, and Au. The first and second pads 61 and 63 may be formed of multiple layers.

The pattern formation process of the wiring portion 30 will be described with reference to examples of FIGS. 6A to 12C. For convenience of explanation, the description will be made based on the upper pad 31 of the support member 1, and the wiring portion 30 may be formed on the lower pad through the same process as the upper pad 31.

As shown in (A)-(C) of FIG. 6A, the wiring portion 30 is formed on the upper pad 31 or/and the lower pad of the support member 1. The surface of the pad where the wiring portion 30 is to be formed may be separately etched without using a laser beam, or an etching process may be performed to adjust the size of the pad.

At this time, when the area where the wiring portion is to be formed is etched, the etching process may be concavely etched using plasma generated by activated gas and a laser beam in a low-temperature vacuum chamber. The low-temperature vacuum chamber operates at a temperature below 0 degrees, for example, in the range of 0 degrees to -50 degrees, and the pressure within the chamber may be adjusted or changed depending on etching conditions. The gas is, for example, at least one of N ₂ , Ar, He, CF ₄ , SF ₆ , NH ₃ , CF ₄ /H ₂ , CHF ₃ , C ₂ F ₆ , H ₂ , C ₂ H ₄ , CH ₄ and O ₂ may include. Here, the oxygen content in the gas may be 0.1% or more, for example, in the range of 0.1% to 10%. Additionally, the type of gas can be selected and its content can be adjusted through the synthesis unit. Since etching is performed by a laser beam in a low-temperature environment within a vacuum chamber, damage to surrounding metal lines and pads is reduced, phenomena such as burning (color change) do not occur, and deterioration can be prevented. Additionally, plasma is generated locally by the laser beam, which smoothens the processed surface and improves the etching rate.

The wiring portion 30 may be formed on the upper pad 31. The wiring portion 30 may be formed to have a width smaller than that of the upper pad 31, thereby reducing interference between adjacent pads. The wiring portion 30 may be formed of the same or different metal material as the upper pad 31. The thickness of the wiring portion 30 may be different from the thickness of the upper pad 31, and may be 1 μm or more, for example, in the range of 1 μm to 40 μm or 1 μm to 30 μm. Here, the thickness of the upper pad 31 may be 1㎛ or more, for example, in the range of 1㎛ to 100㎛.

This wiring portion 30 is disposed on the upper pad 31 and extends from the upper pad 31 to the surface of the support member, or through the side of the support member 1 and the lower surface of the support member 1. It may extend to the lower pad.

The wiring unit 30 supplies activated metal powder to the upper pad 31 and then irradiates it using a laser beam to form a flat pattern or/and three-dimensional pattern on the upper pad 31 where the metal powder is distributed. of metals can be directly fused or deposited. This process can be performed in a chamber at room temperature and atmospheric pressure.

At this time, the metal powder can be supplied to the pattern formation area in advance through the upper, lower, and side surfaces of the support member 1, and can be directly fused to the support member 1 as described above through a laser beam. At this time, the metal to be deposited or fused is formed by melting metal powder with a laser, so that the oxygen component contained in the metal powder can improve the adhesion to the surface of the support member 1 or the circuit board when the metal powder is melted. there is. The surface on which the metal pattern is formed may be the surface of the support member 1 of the circuit board or/and the surface of the pad. The wiring portion 30 may extend to the upper surface (Sa), lower surface (Sb), and side surfaces of the support member (1).

The wiring portion 30 may be formed of a conductive material or metal, for example, Ti, Ta, W, Al, Cu, In, Ir, Pd, Co, Gr, CNT, Cr, Mg, Mo, Zn, It may include at least one of Ni, Si, Ge, Ag, Au, Hf, Pt, Ru, Rh, TiN, and TaN, or at least one of two or more alloy materials thereof. For example, the metal of the wiring portion 30 may include Cu or CuGr, which has high thermal and electrical conductivity, but is not limited thereto. The size of the powder may be nano-sized, such as 1 nm or more, 1 nm to 5000 nm, 1 nm to 2000 nm, or 100 nm to 500 nm, and may vary depending on the size of the metal particle. The conductive powder may be a pulverized metal oxide, a pulverized metal carbide, a pulverized metal nitride, a pulverized metal, or a pulverized mixture of a metal oxide and other additives. This ground product can be ground by mechanical grinding method.

The width of the wiring portion 30 may be 150 μm or less, for example, 5 μm to 150 μm, or 20 μm to 60 μm. The width of the wiring portion 30 may vary depending on the size of the terminal connected to the upper pad 31 connected to the LED chip or the terminal connected to the lower driver.

The boundary between the upper pad 31 and the wiring portion 30 may be formed of an alloy of two different metals. When the wiring portion 30 is bonded to the lower pad 32, an alloy of two different metals may be formed.

An embodiment of the invention is to form the wiring portion 30 using metal powder on the surface of the panel or the top, bottom, or side of the circuit board or support member 1, thereby forming the upper portion without performing a plating process or a dispensing process. The pad 31 and the lower pad 32 can be electrically connected. In addition, by forming the wiring portion 30 having a thin width and thickness with a high purity metal, sheet resistance can be lowered and electrical efficiency can be improved. Additionally, since the line width of the wiring portion 30 can be adjusted depending on the number of times the laser passes through the laser and the size of the powder, it can be easy to adjust the tolerance between each wiring portion 30.

As shown in (C) of FIG. 6A, a passivation layer 33 may be formed on the surface of the wiring portion 30. The passivation layer 33 may be formed by dispensing or deposition. The passivation layer 33 may protect the surfaces of the wiring portion 30 and the upper pad 31 disposed at the edge area of the support member 1. The wiring portion 30 and the passivation layer 33 may be disposed along the top, bottom, and/or side surfaces of the support member 1. The passivation layer 33 is formed on the surface of the wiring portion 30 and can prevent interference between adjacent wiring portions, electrical short problems, or moisture penetration. The passivation layer 33 is formed up to the surfaces of the upper pad 31 and the lower pad 32 (FIG. 4), and can protect the edge areas of the upper surface Sa and lower surface Sb. The passivation layer 33 may include at least one of TiO ₂ , SiO ₂ , SiON, and Al ₂ O ₃ or may be formed of an oxide film, a nitride film, or a dielectric constant film.

As shown in (A)-(C) of FIG. 6B, an opening Pf1, which is a wiring formation area, is formed in the upper pad 31 or/and the lower pad of the support member 1. At this time, the wiring formation area can be etched using plasma generated by activated gas and a laser beam in a low-temperature vacuum chamber. The wiring formation area may be formed as an opening Pf1 penetrating from the top to the bottom of the upper pad 31. The depth of the opening Pf1 is the thickness of the upper pad 31, and when made deeper or thinner, it can be adjusted by the intensity and irradiation time of the laser beam. The opening Pf1 may be one or more in each pad, and its top view may be circular or polygonal. The upper surface Sa of the support member 1 may be exposed at the bottom of the opening Pf1. The depth of the opening Pf1 may be 1 μm or more, for example, in the range of 1 μm to 100 μm, and the width of the opening Pf1 may be smaller than the width of the pad on which the opening Pf1 is formed.

As shown in (B) of FIG. 6B, a wiring portion 30 is formed in the opening Pf1. The wiring unit 30 supplies metal powder into the opening Pf1 and irradiates it using a laser beam, so that metal in the form of a flat pattern or/and a three-dimensional pattern is fused or fused to the opening Pf1 where the metal powder is distributed. can be deposited. This process can be performed in a chamber at room temperature and atmospheric pressure. The wiring portion 30 may be formed through the process disclosed above. At this time, the wiring portion 30 may be adhered to the upper surface of the support member 1 and the inner surface of the pad through the opening Pf1. The wiring portion 30 may also extend to the upper surface of the upper pad 31.

As shown in (C) of FIG. 6B, a passivation layer 33 is formed on the surfaces of the wiring portion 30 and the upper pad 31. The passivation layer 33 may be provided in a form that covers the upper pad 31 and may be in contact with the upper surface Sa of the support member 1. The wiring portion 30 and the passivation layer 33 may be formed on the top, bottom, or/and side surfaces of the support member 1.

Referring to Figures 7 (A)-(D), the upper pad 31 and/or the lower pad of the support member 1 is formed with an opening Pf2. The opening Pf2 may be further recessed into a concave portion on the upper or/and lower surface of the support member 1. The depth of the opening Pf2 may be greater than the thickness of the upper pad 31, and may be 1 ㎛ or more, or in the range of 1 ㎛ to 50 ㎛, on the upper surface (Sa) or/and lower surface of the support member 1. It can be formed in depth. The lower part of the opening Pf2 may have a hemispherical shape or a polygonal shape. The opening Pf2 can be etched from the upper pad 31 to the upper part of the support member 1 using plasma generated by activated gas and a laser beam in a low-temperature vacuum chamber.

This opening (Pf2) is formed along the upper pad 31, at the upper part of the edge area without the upper pad 31, the side of the support member 1, the lower edge area of the support member 1, and the lower pad. can be extended to

As shown in FIG. 7 (C), a wiring portion 30 is formed in the opening Pf2. The wiring unit 30 supplies metal powder into the opening Pf2 and then irradiates it using a laser beam, so that metal in the form of a flat pattern or/and a three-dimensional pattern is fused or fused to the opening Pf2 where the metal powder is distributed. can be deposited. This process can be performed in a chamber at room temperature and atmospheric pressure. This wiring portion 30 may extend through the opening Pf2 to connect the upper pad 31 and the lower pad 32.

As shown in (D) of FIG. 7, a passivation layer 33 may be formed on the wiring portion 30 and the pad 31. The wiring portion 30, the opening Pf2, and the passivation layer 33 may be formed on the top, bottom, or/and side surfaces of the support member 1.

Referring to FIGS. 8A and 8B, as shown in (A) (B) of FIG. 8A and (A) (B) of FIG. 8B, the pad 31 provided on the upper surface (Sa) (or lower surface) of the support member 1 ) is spaced apart from the side (Sc), and the side (Sc) may be a surface cut in a low-temperature drilling chamber or a reprocessed surface. An opening (Pfa) is formed on the side surface (Sc) at a predetermined depth using a laser beam and gas in a low-temperature vacuum chamber. The opening Pfa may be formed in an inward direction from the side surface Sc, from the top to the bottom of the side. The depth of the opening Pfa may be equal to the sum of the thickness of the wiring portion to be formed later and the thickness of the passivation layer, or may be a depth with an error of 0.1 mm or less from the sum.

As shown in (C) of FIG. 8A and (C) of FIG. 8B, the wiring portion 30 is formed. The wiring portion 30 can fuse metal material and gas activated in a low-temperature vacuum chamber using plasma generated by a laser beam. The area where the wiring is fused may be formed on the upper surface of the pad 31, the upper surface of the support member 1, and the inner surface of the opening Pfa. The pattern P31 of the wiring portion 30 formed on the inner surface of the opening Pfa may be formed so as not to protrude outward from the side surface Sc. The area where the wiring is fused is formed on the surface of the lower pad and the lower surface of the support member 1, and can be connected to the wiring portion formed in the opening Pfa. (D) in FIGS. 8A and 8B (D) As shown, when the wiring portion 30 is formed, the passivation layer 33 can be formed to protect the surfaces of the wiring portion 30 and the pad 31. At this time, the passivation layer 33 formed in the opening Pfa may be formed so as not to protrude outward beyond the side surface Sc. Accordingly, the outer side of the passivation layer 33 formed in the opening Pfa may be on the same plane as the side Sc, or may be arranged within the error range (i.e., 0.1 mm or less). The width of the passivation layer 33 formed in the opening Pfa may be the same as the pattern P31 of the wiring portion 30, and may be smaller than the width formed on the upper and lower surfaces of the support member 1. As another example, the opening Pfa may be formed to be equal to or smaller than the width of the passivation layer 33 formed on the upper and/or lower surface of the support member 1. Accordingly, the passivation layer 33 covers the surfaces of the wiring portion 30 and the pattern P31 and may not protrude further outward than the side surface Sc of the support member 1. In this case, when two adjacent display panels are brought into close contact, the gap caused by the close contact can be eliminated or minimized.

By placing the pattern P31 of the wiring portion 30 further inside the side Sc of the support member 1, the pattern P31 can be protected and shock can be eliminated when in close contact with an adjacent panel. You can. The pattern (P31) and the opening (Pfa) can be arranged in one or more pieces, for example, two or more, on each of the pads to be connected, thereby improving the reliability of the pattern. The opening Pfa may have a polygonal side cross-section, a hemispherical shape, a semi-oval shape, or a chamfered edge. The upper portion of the opening Pfa may extend concavely to the side of the upper pad 31, and/or the lower portion may extend concavely to the side of the lower pad.

As shown in (A) and (B) of FIGS. 8C, the opening (pfb) formed on the side surface (Sc) of the support member 1 may be formed in a step structure that is wide on the outside and narrow on the inside. A pattern of the wiring portion 30 may be formed inside the opening Pfb, and a passivation layer 33 may be formed outside the opening Pfb. The passivation layer 33 may be equal to or wider than the outer width of the opening Pfb, and may protect the pattern of the wiring unit 30 with a wider width on the opening Pfb.

Referring to Figures 9 (A)-(D), an opening Pf3 is formed inside the upper pad 31 and the lower pad 32 of the support member 1. The opening Pf3 may penetrate vertically or obliquely from the upper surface of the upper pad 31 to the lower surface of the lower pad 32. The height of the penetrating opening Pf3 may be greater than the thickness of the support member 1. The top view shape of the opening Pf may be circular, elliptical, or polygonal. The opening Pf3 can be etched from the upper pad 31 to the lower surface of the lower pad using plasma generated by activated gas and a laser beam in a low-temperature vacuum chamber. This opening Pf3 may connect the upper pad 31 and the lower pad 32 in a vertical direction.

As shown in FIG. 9 (C), a wiring portion 30 is formed in the opening Pf3. The wiring unit 30 supplies metal powder into the opening Pf3 and then irradiates it using a laser beam, so that metal in the form of a flat pattern or/and a three-dimensional pattern is fused or fused to the opening Pf3 where the metal powder is distributed. can be deposited. This process can be performed in a chamber at room temperature and atmospheric pressure. This wiring portion 30 can connect the upper pad 31 and the lower pad 32 through the opening Pf3. The wiring portion 30 may contact the inner surface of the support member 1 and be bonded to the upper pad 31 and the lower pad 32. The wiring portion 30 may protrude through the upper surface (Sa) and the lower surface (Sb) of the support member 1.

As shown in FIG. 9 (D), passivation layers 33 and 34 may be formed on the wiring portion 30 and the upper and lower pads 31 and 32, respectively.

The invention is provided in a form in which the passivation layer 33 and the wiring portion 30 do not protrude from the side surface Sc of the support member 1, as shown in Figure 10 (A), and in this case, the vertical straight line V1 ), the side surface (Sc), and the outer surface of the passivation layer 33 may be disposed on the same line. When two adjacent display panels B11 and B12 are brought into close contact as shown in (B) of FIG. 10, the side surfaces Sc of the support member 1 may be brought into close contact with each other. On the other hand, in the comparative example, as shown in FIG. 11 (A), the wiring portion 30 and the passivation layer 33 are formed on the outside of the side surface Sc of the support member 1, so the vertical straight line V1 Alternatively, it is provided in a form that protrudes outward from the side (Sc). Accordingly, as shown in (B) of FIG. 11, when two adjacent display panels (B11 and B12) are brought into close contact in the comparative example, a problem occurs in which the gap between the panels or the gap between the display areas is separated by a predetermined gap (G2). It can be. The gap G2 may be a gap corresponding to the sum of twice the thickness of the wiring part and twice the thickness of the passivation layer. The reliability of the micro display device may be reduced due to this gap G2.

As shown in FIG. 12A, the laser beam may be irradiated toward the inclined surface Sa1 of the support member 1 or the stepped surface in one or multiple stages. In addition, the pad formed on the inclined surface (Sa1) of the support member (1) can be irradiated to form an opening (Pf2), and the wiring portion ( 30) can be formed. As another example, the surface of the support member 1 may be a flat surface, an inclined surface, or a three-dimensional surface, and an opening is formed along this surface directly with a laser beam, or metal powder is directly fused with a laser beam. I can give it.

As shown in Figure 12b, the laser beam may be irradiated to the surface of the support member 1 as a curved surface Se, for example, a convex curve or a concave curve. In addition, the pad formed on the curved surface Se of the support member 1 may be irradiated to form an opening Pf2, and the wiring portion 30 may be formed on the opening Pf2 or/and the surface of the support member 1. can be formed.

As shown in FIG. 12C, the laser beam may be irradiated to the inclined upper surface (Sa1) and lower surface (Sb1) of the support member 1 or may be irradiated toward pads formed on the inclined upper surface (Sa1) and lower surface (Sb1). In addition, the inclined pad of the support member 1 may be irradiated to form a vertically penetrating opening Pf3, and the wiring portion 30 may be formed on the opening Pf3 or/and the inclined surface of the support member 1. can be formed.

As shown in Figure 13, the TFT cell formed on the support member 1 is cut into unit panel sizes (S31). At this time, the unit panel size cutting process uses gas activated in a low-temperature vacuum chamber and plasma generated by a laser beam to cut along the cutting line of the unit panel. Afterwards, a wiring formation area is formed using activated gas and a laser beam in a low-temperature vacuum chamber (S33). This process may be carried out in the same chamber as the cutting process, and as shown in FIGS. 6A to 12C, the wiring formation area may include a process of forming the openings (Pf1, Pf2, Pf3, Pfa, and Pfb). .

Then, metal powder and a laser beam are irradiated to the wiring area to form the wiring portion 30 (S35). At this time, the process of forming the wiring portion 30 can be done by supplying nano-sized metal powder activated in a room temperature and atmospheric pressure environment and melting the metal powder with the heat of a laser beam to form a lead pattern. In this process, high-purity metal in a deoxidized state can be fused, allowing high adhesion to the surface of the support member 1 or/and the pad, and forming low-resistance wiring. At this time, the wiring width can be adjusted by the size of the beam spot, and a high-precision pattern can be formed by sucking in the undissolved metal powder through the suction process.

Afterwards, a process of forming a passivation layer on the wiring portion 30 and the pad is performed (S37). The passivation layer may be formed to prevent and protect the wiring portion from oxidation.

Referring to FIG. 14, the gas activation unit 214 of the chamber 210 stores the gas supplied through the gas synthesis unit 212, activates it through a microwave, and supplies it. The gas supplied from the gas synthesis unit 212 may include at least one or both of an inert gas and a fluorine gas, for example, N ₂ , Ar, He, CF ₄ , SF ₆ , NH ₃ , CF ₄ /H ₂ , CHF ₃ , C ₂ F ₆ , H ₂ , C ₂ H ₄ , CH ₄ and O ₂ may be included. Here, the oxygen content in the gas may be 0.1% or more, for example, in the range of 0.1% to 10%. Additionally, the selection or content of gas within the gas synthesis unit 212 can be adjusted.

The low-temperature vacuum chamber 220 includes a gas injector 202 and a laser module 204, and the gas injector 202 supplies the activation gas (G1) supplied from the gas activation unit 214 to the support member through an inlet. (1) It is provided as a wiring formation area on the top, and when the laser beam L0 of the laser module 204 is irradiated, the wire formation area is etched through a process of etching by plasma generated by the laser beam L0. can be formed. This etching process may include a cutting process, a process of forming a concave opening (Pf), or a process of forming a penetrating opening (Pf2).

Referring to FIGS. 15 and 16 , the chamber 201A may include a gas synthesis unit 211, a metal powder supply unit 213, a material storage tank 215, and an activation unit 217. Metal powder is supplied from this chamber 201A by supplying gas supplied from the gas synthesis unit 211 and powder of a conductive material from the metal powder supply unit 213 (S11). These gases and metal powders may be stored in the material storage tank 215. The gas may include at least one or both of inert gas and fluorine gas, such as N ₂ , Ar, He, CF ₄ , SF ₆ , NH ₃ , CF ₄ /H ₂ , CHF ₃ , C ₂ F ₆ , It may include at least one of H ₂ , C ₂ H ₄ , CH ₄ and O ₂ . Here, the oxygen content in the gas may be 0.1% or more, for example, in the range of 0.1% to 10%. Additionally, the selection or content of gas within the gas synthesis unit 211 can be adjusted.

The powder of the conductive material is a metallic material, such as Ti, Ta, W, Al, Cu, In, Ir, Pd, Co, CNT, Cr, Mg, Mo, Zn, Ni, Si, Ge, Ag, Au, Hf. , Pt, Ru, Rh, TiN, and TaN may be provided as a mixed material of at least one or two or more of them. The size of the powder may be nano-sized, such as 1 nm or more, 1 nm to 5000 nm, 1 nm to 2000 nm, or 100 nm to 500 nm, and may vary depending on the size of the metal particle. The conductive powder may be a pulverized metal oxide, a pulverized metal carbide, a pulverized metal nitride, a pulverized metal, or a pulverized mixture of a metal oxide and other additives. This ground product can be ground by mechanical grinding method. The powder content or injection material within the metal powder supply unit 213 can be adjusted.

The material storage tank 215 stores the gas and the metal powder, and supplies the material containing the metal powder to the activation unit 216 (S12). The activation unit 216 receives and stores the material containing the powder in the activation tank 217, and can activate the stored material containing the metal powder by the microwave device 218. By activating the metal powder using the microwave device 218, the activated metal material can be supplied through the powder supply unit 201 (S13).

The chamber 220A is a room temperature atmospheric pressure chamber and may include a powder supply unit 201 and a laser module 203. The powder supply unit 201 can emit light inside a predetermined opening (Pf) of the circuit board 20 or on the surface of the support member 1, and the laser module 203 emits the activated metal powder (Pm). When the gas is emitted, the laser beam (L1) is irradiated to the corresponding area (S14). At this time, the metal powder Pm may be formed into the wiring portion 30 having a predetermined thickness and width through continuous irradiation of the laser beam L1.

At this time, the activated metal is provided with gas in powder form, melted by a laser beam, and fused to the inside or/and surface of the opening (Pf2) of the circuit board 20, thereby forming a pure metal material, such as oxide, nitride, or carbide. In this case, metal particles from which substances other than the metal have been removed may be dissolved and deposited. That is, the activation unit 216 can remove the oxide film, carbonide film, or nitride film contained in the metal powder. Accordingly, the purity of the metal powder can be improved. For example, in the case of a tungsten material, when the oxide is removed, adhesion to the substrate surface may be higher. Additionally, in the case of graphene oxide or copper oxide material, when the oxide is removed, the graphene or copper material may be fused. For example, a material such as graphene oxide can be provided as reduced graphene using microwaves.

The embodiment of the invention is sprayed in powder form on the inside of the support member and/or on the surface of the pad, so it can be distributed over a wider area and has a cost reduction effect. Accordingly, the wiring portion 30 made of a metal material deposited on the surface of the support member or/and the pad surface and the opening has a low sheet resistance of 50 mΩ or less and the surface adhesion can be increased by deposition using a laser. In addition, the laser beam moves at a speed of more than 1 meter per second and at a high temperature (over 10,000 degrees), so it is possible to minimize raw material particles and minimize the laser beam width, forming a uniformly distributed connection pattern. In addition, when the metal powder is ejected and irradiated with a laser beam, the powder that is not fused can be adsorbed by adsorbing it using an adsorption device, so that a separate cleaning process may not be performed. Additionally, by using a laser to fuse the dried powder, a separate heat treatment process is not required. Additionally, gas and metal materials can be diversified, broadening the range of material selection. It may be easy to control the thickness or height of the wiring portion 30. Additionally, it can be easy to control the tolerance of the pattern formed on the pad surface. Additionally, since there is no need to use coating ink or liquid paste, the process can be quickly simplified.

17 and 18, a driver IC 19 and a lower pad 32 connected thereto are disposed on the lower surface of the circuit board 20, and wiring portions ( 30), and the wiring portion 30 can electrically connect from the top to the bottom of the circuit board 20. The wiring portion 30 may be arranged along at least one side Sc of the circuit board 20 or the support member 1 or adjacent areas on two different sides. The wiring portion 30 may connect the upper pad 31 disposed on the upper surface Sa of the circuit board 20 and the lower pad 32 disposed on the lower surface. The upper pads 31 may be electrically connected to a plurality of LED chips 2A, 2B, and 2C through a wiring La, or may be disposed at an end of the wiring La. The lower pad 32 may be disposed at a position corresponding to the upper pad 31 on the lower surface (Sb) of the circuit board 20. These upper pads 31 and lower pads 32 may each be connected to a plurality of wiring portions 30 . The edge area of the circuit board 20 where the wiring portion 30 is disposed may be protected by a passivation layer 33. By connecting each of the upper pads 31 and the lower pads 32 to each other through a wiring portion 30 made of a conductive material around the outer circumference of the circuit board 20, holes penetrating the circuit board 20 are formed. There is no need to form it. The passivation layer 33 is formed on the surface of the wiring portion 30 and can prevent interference between adjacent connections, electrical shorts, or moisture infiltration. The passivation layer 33 is formed up to the surfaces of the upper pad 31 and the lower pad 32 to protect the edge areas of the upper and lower pads Sa and Sb. The passivation layer 33 may be formed of an oxide film, a nitride film, or a dielectric constant film.

Conventionally, a pattern is formed on the side Sc of the circuit board 20, and when the upper pad 31 and the lower pad 32 are connected, the pattern is formed using a dispensing process. Additionally, when forming a side pattern using a plating method in a panel having a thin film transistor portion, there is a problem in that the plating process cannot be used because electrical damage may occur to the thin film transistor portion during the plating process. Therefore, when forming a side pattern of the circuit board 20 or the support member 1 using a dispensing process, it is difficult to form a fine pattern. That is, in order to secure the gap between adjacent side patterns, the fine pattern is required to have a pattern width of 100㎛ or less, for example, 20㎛ to 60㎛. However, it is difficult to secure the above-mentioned fine pattern width through the dispensing process, and the tolerance of the pattern must be adjusted. This can be difficult.

In addition, by forming side patterns through a dispensing process, there is a problem that the purity of the pattern material is low and the sheet resistance value is high. In addition, when the side pattern is deposited on the side Sc of the circuit board 20 or the support member 1 by dispensing, the adhesion is low, and a curing process can be performed after deposition.

In the present invention, the circuit board 20 may include a wiring portion 30 in at least one or two or more regions among a plurality of edge regions. The wiring connection portion 30 may include an upper pattern (P1), a lower pattern (P2), and a connection pattern (P3). The upper pattern P1 may be part of the upper pad 31 or may extend from the upper pad 31 to the top of the side. The lower pattern P2 may be part of the lower pad 32 or may extend from the lower pad 32 to the bottom of the side. The connection pattern P3 may be disposed on the side Sc of the circuit board 20 or the support member 1. The connection pattern P3 may connect the outer ends of the upper pad 31 and the lower pad 32 that face each other. For example, the connection pattern (P3) may be connected to the upper pattern (P1) and the lower pattern (P2). The connection pattern (P3) may connect the upper pattern (P1) and the lower pattern (P2) to each other. Here, the upper pattern (P1) and the lower pattern (P2) may be formed of the same material as the upper pad 31 and the lower pad 32.

The upper pattern (P1) and lower pattern (P2) of the wiring portion 30 may be formed in the same multilayer structure as the upper and lower pads 31 and 32. The connection pattern (P3) may be formed from the upper pattern (P1) to the lower pattern (P2) and may be formed of a conductive material. The connection pattern P3 has a layer structure different from the upper pattern P1 and the lower pattern P2 and may be formed of a single metal or a composite metal (eg, alloy). The connection pattern P3 may include a flat pattern and a three-dimensional (3D) pattern. The connection pattern P3 may be formed as a single-layer structure. The connection pattern P3 may be formed of a material different from the upper pad 31 and the lower pad 32. The connection pattern P3 may have a thickness different from that of the lower pad 32 . The thickness of the upper and lower patterns (P1, P2) may be 1㎛ or more, for example, in the range of 1㎛ to 100㎛. The thickness of the connection pattern P3 is the distance from the side surface Sc to the outer surface, and may be 1 ㎛ or more, for example, in the range of 1 ㎛ to 40 ㎛ or 1 ㎛ to 30 ㎛. The thickness of this connection pattern (P3) may vary depending on the sheet resistance value and the size of the metal powder.

As described below, the connection pattern P3 may be fused or deposited in the form of a planar pattern or/and three-dimensional pattern on the surface where the metal powder is distributed by irradiating the metal powder using a laser. At this time, the metal to be deposited or fused is formed by melting metal powder with a laser, so that the oxygen component contained in the metal powder improves the adhesion with the surface of the support member 1 or the circuit board 20 when the metal powder is dissolved. I can do it for you. The surface on which the metal pattern is formed may be the surface of the support member 1 of the circuit board 20 or/and the surface of the pad.

The connection pattern (P3) may be formed of a conductive material or metal, for example, Ti, Ta, W, Al, Cu, In, Ir, Pd, Co, Gr, CNT, Cr, Mg, Mo, Zn, It may include at least one of Ni, Si, Ge, Ag, Au, Hf, Pt, Ru, Rh, TiN, and TaN, or at least one of two or more alloy materials thereof. For example, the metal of the connection pattern P3 may include Cu or CuGr, which has high thermal and electrical conductivity, but is not limited thereto. The height of the connection pattern (P3) may be greater than or equal to the thickness (T1) of the support member (1). The width of the connection pattern P3 may be 150 μm or less, for example, 5 μm to 150 μm, or 20 μm to 60 μm. The width of this connection pattern (P3) may vary depending on the size of the terminal, which is the upper pad 31 connected to the LED chip, or the size of the terminal connected to the driver at the bottom.

An embodiment of the invention forms the connection pattern P3 on the side of the panel, the circuit board 20, or the side Sc of the support member 1 using metal powder, thereby forming the connection pattern P3 without performing a plating process or a dispensing process. The upper pad 31 and the lower pad 32 can be electrically connected. Additionally, by forming the connection pattern P3 with a thin width and thickness, sheet resistance can be lowered and electrical efficiency can be improved. Additionally, since the line width of the connection pattern (P3) can be adjusted depending on the number of times the laser passes through the laser and the powder size, it can be easy to adjust the tolerance between each connection pattern (P3).

Here, the pattern P3 may be formed within the openings Pfa and Pfb formed in FIGS. 8A, 8B, and 8C. Additionally, the passivation layer 33 may be formed within the openings Pfa and Pfb formed in FIGS. 8A, 8B, and 8C. Accordingly, the pattern P3 and the passivation layer 33 may not protrude further outward than the side surface of the support member 1.

Referring to Figures 19 and 20, the upper pads 31 and lower pads 32 may each be connected to the wiring portion 30 penetrating the support member 1. The wiring portion 30 may include patterns P1, P2, and P3 disposed on the upper surface, lower surface, and through hole of the support member 1. The patterns (P1, P2, P3) are formed to a height greater than the thickness of the support member 1, and are connected to or in contact with the inner peripheral surface of the upper pad 31 and connected to or in contact with the inner peripheral surface of the lower pad 32. You can.

Conventionally, through holes are formed in the circuit board 20, and then each through hole is filled with paste through a dispensing process. That is, when connecting the upper pad 31 and the lower pad 32, a pattern is formed using a dispensing process. Additionally, when forming a side pattern using a plating method in a panel having a thin film transistor portion, there is a problem in that the plating process cannot be used because electrical damage may occur to the thin film transistor portion during the plating process. Therefore, when forming a pattern in the internal hole of the circuit board 20 or the support member 1 using a dispensing process, there is a problem that the hole size increases depending on the dispensing process or paste material. In other words, it is difficult to secure the gap between adjacent holes, and tolerance control may be difficult.

In addition, in the past, by forming hole patterns through a dispensing process, there is a problem that the purity of the pattern material is low and the sheet resistance value is high. In addition, when a hole pattern is deposited on the inside of the circuit board 20 or the support member 1 by dispensing, the adhesion is low and the curing process after deposition may be complicated.

The invention is to form a plurality of through holes on the outer portion of the circuit board 20 to a size large enough to irradiate a laser beam or to a size large enough to insert metal powder, and then inject metal powder into the through holes. A pattern can be formed by irradiating a laser beam to metal powder. At this time, the metal powder melts at the bottom of the hole and is fused to the inner surface of the through hole, so that a pattern can be formed from the bottom of the hole toward the top. Additionally, metal powder may be ejected onto the surface of the upper pad 31 or/and a portion of the surface of the lower pad 32 and a laser beam may be irradiated to form upper and lower patterns of through holes. The wiring portion 30 can be formed through this process.

The minimum width of the wiring portion 30 is the same as the width of the through hole, and the maximum width may be smaller than the width of the upper pad. The width of the through hole may be at least 10㎛, for example, 10㎛ to 40㎛ or 20㎛ to 40㎛. When viewed from the top, the through hole may include at least one of a circular shape, an elliptical shape, or a polygonal shape. For example, the depth of the through hole is greater than the thickness of the support member 1 and may be in the range of 5㎛ to 2000㎛.

Figures 21 to 23 are diagrams showing problems caused by cutting with a conventional laser beam. As shown in Figure 21, there is a metal burr on the cutting line between wiring areas 1 and 2 of two adjacent substrates or panels (B1 and B2). Once an area is formed, a process to remove it may be added, and there is a problem in that the HAZ area is formed up to the edge area. The metal burr area is formed around 18㎛ from the cutting line, damaging the edge area, and the HAZ area is formed up to 50㎛ from the cutting line, affecting the pad or wiring part. As shown in FIG. 22, in the cut substrate or panel B3, the HAZ area affects the area around 86㎛ from the cutting line, which can cause the problem of pad deterioration. As shown in Figure 23, in the cut substrate or panel (B4), the HAZ area extends up to 300㎛ or more based on the cutting line, and there is a problem of affecting the display area beyond the edge area or even affecting the pad area. .

In addition, as shown in Figure 24, when using a silicon wafer, the width (Wb) of the HAZ area affects up to around 61.3㎛ due to existing laser beam cutting, exceeding the cutting width (Wa) of 24.2㎛, and damaging the elements or surroundings around the cutting. There is a problem that affects burning areas. Even if a CIS wafer is used as shown in FIG. 25, when using the existing laser beam process, discoloration problems, such as an orange color different from the display area, may occur around the cutting line.

As shown in FIG. 26, the invention provides a surface that maintains the unique crystal structure of the glass, for example, the unique material of the support member when cutting with a laser beam in a low-temperature vacuum chamber, and prevents significant damage to other wiring areas or edge areas. It may not be given.

As described above, the present invention has been described with reference to preferred embodiments, but those skilled in the art may make various modifications and changes to the present invention without departing from the spirit and scope of the present invention as set forth in the claims below. You will understand that you can do it.

In addition, the drawing numbers described in the claims of the present invention are only used for clarity and convenience of explanation and are not limited thereto. In the process of explaining the embodiment, the thickness of the lines shown in the drawings, the size of the components, etc. may be exaggerated for clarity and convenience of explanation, and the above-mentioned terms are terms defined in consideration of functions in the present invention, which may vary depending on the intention or custom of the user or operator, so the interpretation of these terms should be decided based on the contents throughout this specification.

1: Support member
2: Pixel area
2A, 2B, 2C: LED chips
11,12,13,14: Display panel
20: circuit board
41: first insulating layer
50: Thin film transistor unit
61,63: Pad
30: wiring part
31: upper pad
32: lower pad
33: Passivation layer

Claims (6)

In the method of manufacturing a display panel having a transparent support member, a thin film transistor portion and a plurality of LED chips on the transparent support member,
forming an inwardly concave opening on a side of the support member;
forming a wiring portion within the concave opening;
connecting the upper and lower pads of the support member through the wiring portion; and
It includes forming a passivation layer on the wiring portion to be disposed within the concave opening,
The concave opening is concavely formed from the upper side of the support member to the lower side of the support member,
The step of forming the wiring portion includes radiating activated metal powder and gas from which the oxide, carbide, or nitride film has been removed into the concave opening, and irradiating a laser beam toward the activated metal powder. Manufacturing method. According to paragraph 1,
The step of forming the concave opening is a method of manufacturing a display panel, wherein the concave opening is etched using a gas activated in a low-temperature vacuum chamber and plasma generated by the laser beam. According to paragraph 1,
The concave opening is partially penetrated by the upper pad or the lower pad and includes a concave area inside a side of the support member through the upper pad and the lower pad. According to paragraph 1,
In the step of forming the wiring portion, the wiring portion is formed of a metal different from the material of the upper pad and the lower pad, and the width of the wiring portion is formed to be narrower than the width of the upper pad. . According to paragraph 1,
The method of manufacturing a display panel, wherein the wiring portion is disposed inside a side surface of the support member, and the surface of the passivation layer does not protrude outward from the side surface of the support member. According to paragraph 1,
It includes cutting a plurality of display panels into unit sizes on the support member,
The cutting step is a method of manufacturing a display panel in which cutting is performed using plasma generated by activated gas and a laser beam in a low-temperature vacuum chamber at a temperature of -50°C to 0°C.