KR102575795B1 - 칩의 제조 방법 - Google Patents

칩의 제조 방법 Download PDF

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Publication number
KR102575795B1
KR102575795B1 KR1020180081428A KR20180081428A KR102575795B1 KR 102575795 B1 KR102575795 B1 KR 102575795B1 KR 1020180081428 A KR1020180081428 A KR 1020180081428A KR 20180081428 A KR20180081428 A KR 20180081428A KR 102575795 B1 KR102575795 B1 KR 102575795B1
Authority
KR
South Korea
Prior art keywords
workpiece
holding
chip
modified layer
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020180081428A
Other languages
English (en)
Korean (ko)
Other versions
KR20190011197A (ko
Inventor
요시아키 요도
진얀 자오
Original Assignee
가부시기가이샤 디스코
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시기가이샤 디스코 filed Critical 가부시기가이샤 디스코
Publication of KR20190011197A publication Critical patent/KR20190011197A/ko
Application granted granted Critical
Publication of KR102575795B1 publication Critical patent/KR102575795B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H01L21/78—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H01L21/56—
    • H01L21/76—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/37—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations with orientating and positioning by means of a vibratory bowl or track
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment

Landscapes

  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
KR1020180081428A 2017-07-24 2018-07-13 칩의 제조 방법 Active KR102575795B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017142910A JP6961297B2 (ja) 2017-07-24 2017-07-24 チップの製造方法
JPJP-P-2017-142910 2017-07-24

Publications (2)

Publication Number Publication Date
KR20190011197A KR20190011197A (ko) 2019-02-01
KR102575795B1 true KR102575795B1 (ko) 2023-09-06

Family

ID=65172593

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180081428A Active KR102575795B1 (ko) 2017-07-24 2018-07-13 칩의 제조 방법

Country Status (4)

Country Link
JP (1) JP6961297B2 (enExample)
KR (1) KR102575795B1 (enExample)
CN (1) CN109300827B (enExample)
TW (1) TWI745606B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7189026B2 (ja) * 2019-01-07 2022-12-13 株式会社ディスコ 被加工物の加工方法
JP2021015823A (ja) * 2019-07-10 2021-02-12 株式会社ディスコ ウェーハの加工方法
JP7262904B2 (ja) * 2019-08-26 2023-04-24 株式会社ディスコ キャリア板の除去方法
JP7712111B2 (ja) 2021-05-25 2025-07-23 株式会社ディスコ 剥離方法、ウエーハの製造方法及び剥離装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005135964A (ja) * 2003-10-28 2005-05-26 Disco Abrasive Syst Ltd ウエーハの分割方法
JP2013135026A (ja) * 2011-12-26 2013-07-08 Disco Abrasive Syst Ltd ウェーハの加工方法
JP2014199834A (ja) * 2013-03-29 2014-10-23 株式会社ディスコ 保持手段及び加工方法
JP2014236034A (ja) * 2013-05-31 2014-12-15 株式会社ディスコ ウェーハの加工方法
JP2015115350A (ja) * 2013-12-09 2015-06-22 株式会社ディスコ ウェーハ加工装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3408805B2 (ja) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 切断起点領域形成方法及び加工対象物切断方法
JP5791866B2 (ja) 2009-03-06 2015-10-07 株式会社ディスコ ワーク分割装置
JP6391471B2 (ja) * 2015-01-06 2018-09-19 株式会社ディスコ ウエーハの生成方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005135964A (ja) * 2003-10-28 2005-05-26 Disco Abrasive Syst Ltd ウエーハの分割方法
JP2013135026A (ja) * 2011-12-26 2013-07-08 Disco Abrasive Syst Ltd ウェーハの加工方法
JP2014199834A (ja) * 2013-03-29 2014-10-23 株式会社ディスコ 保持手段及び加工方法
JP2014236034A (ja) * 2013-05-31 2014-12-15 株式会社ディスコ ウェーハの加工方法
JP2015115350A (ja) * 2013-12-09 2015-06-22 株式会社ディスコ ウェーハ加工装置

Also Published As

Publication number Publication date
CN109300827B (zh) 2024-03-19
CN109300827A (zh) 2019-02-01
TW201909263A (zh) 2019-03-01
KR20190011197A (ko) 2019-02-01
JP2019024048A (ja) 2019-02-14
JP6961297B2 (ja) 2021-11-05
TWI745606B (zh) 2021-11-11

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