KR102568056B1 - Double heat dissipation structure for surface mount type power semiconductor - Google Patents

Abstract

A double heat dissipation structure for a surface-mounted power semiconductor is provided. In the double heat dissipation structure for surface-mounted power semiconductors according to an embodiment of the present invention, circuit patterns are provided on both sides, and the circuit patterns are electrically connected through vias provided to pass through, FR4 in which power semiconductor elements are mounted on one side PCB; a heat dissipation pad provided to contact the other side of the FR4 PCB facing the power semiconductor device; a first heat dissipating body having one surface in contact with the heat dissipating pad; a second heat sink provided to contact the other surface of the power semiconductor device facing the FR4 PCB; and a heat dissipation screw provided to couple the second heat dissipation body and the first heat dissipation body through the FR4 PCB, wherein the via, the heat dissipation pad, and the first heat dissipation body receive heat generated from the power semiconductor device. in a vertical direction, the circuit pattern and the second radiator transmit heat generated from the power semiconductor device in a horizontal direction, and the heat dissipation screw transfers the heat generated from the power semiconductor device from the second radiator to the A double heat dissipation structure for a surface-mounted power semiconductor that transfers heat to a first heat sink is provided.

Description

Double heat dissipation structure for surface-mounted power semiconductor {DOUBLE HEAT DISSIPATION STRUCTURE FOR SURFACE MOUNT TYPE POWER SEMICONDUCTOR}

The present invention relates to a double heat dissipation structure for a surface-mounted power semiconductor.

In general, batteries for electric vehicles have not yet been sufficiently developed, so the unit price of the battery is high and the energy density is low.

Recently, as an alternative, mild hybrid vehicles improved from existing hybrid vehicles are expected to become mainstream.

Meanwhile, the mild hybrid vehicle supplies power to main power parts such as air conditioners and air conditioners based on a battery voltage of 48V. At this time, since the air conditioner air conditioner and the air compressor require ultra-high speed control because the revolution per minute exceeds 100,000 rpm, a power semiconductor of 100V or less is used. In order to secure high power density, surface-mounted (SURFACE MOUNTED DEVICE) power semiconductor devices are applied to power semiconductor devices, and at this time, heating problems inevitably occur due to conduction loss and switching loss of semiconductor devices.

In addition, in the case of a power conversion system of a mild hybrid vehicle, since the power system must be applied within the limited space of an existing internal combustion engine, it is essential to optimize and downsize the structure according to each vehicle model. At this time, since mild hybrid vehicles require much higher power than conventional internal combustion engine vehicles, circuit design considering thermal performance and cooling system is an important issue for circuit engineers. There was a limit to increasing the power density.

In addition, the board is applied as a PCB made of FR4 material or an insulated metal substrate to which an aluminum (Al) core is applied, but cracks occur at the junction when high thermal and mechanical stress conditions are applied, resulting in degradation of electrical and thermal performance. there was a problem with Moreover, when a surface-mounted power semiconductor is applied to a vehicle with frequent vibrations, cracks occur at junctions.

KR 2020-0085101 A

In order to solve the problems of the prior art as described above, an embodiment of the present invention is for a surface-mounted power semiconductor device capable of improving bonding force while dissipating heat in surface contact with a power semiconductor device and transferring heat to the other heat sink at the same time. It is intended to provide a double heat dissipation structure.

In addition, an embodiment of the present invention is a double heat dissipation structure for a surface-mounted power semiconductor device in which an aluminum plate is disposed on one side of a power semiconductor device to directly dissipate heat from the surface of the device and simultaneously transfer generated heat to the main radiator through a screw. want to provide

According to one aspect of the present invention, the FR4 PCB having circuit patterns on both sides and electrically connected to the circuit patterns through vias provided therethrough, and having a power semiconductor device mounted on one side thereof; a heat dissipation pad provided to contact the other side of the FR4 PCB facing the power semiconductor device; a first heat dissipating body having one surface in contact with the heat dissipating pad; a second heat sink provided to contact the other surface of the power semiconductor device facing the FR4 PCB; and a heat dissipation screw provided to couple the second heat dissipation body and the first heat dissipation body through the FR4 PCB, wherein the via, the heat dissipation pad, and the first heat dissipation body receive heat generated from the power semiconductor device. in a vertical direction, the circuit pattern and the second radiator transmit heat generated from the power semiconductor device in a horizontal direction, and the heat dissipation screw transfers the heat generated from the power semiconductor device from the second radiator to the A double heat dissipation structure for a surface-mounted power semiconductor that transfers heat to a first heat sink is provided.

In one embodiment, the first heat dissipating body may have a rectangular parallelepiped shape, and a plurality of rectangular slits may be formed therein.

In one embodiment, the heat-dissipating screw may include a head portion seated on the second heat-dissipating body; and

A body portion extending from the head of the heat dissipation screw, penetrating the FR4 PCB, and having one end coupled to a fastening groove formed in the first heat dissipation body.

In one embodiment, the heat dissipation screw is a flat head bolt, the head is formed in a flat head shape, and is fixed to the second radiator so that one surface of the head coincides with one surface of the second radiator, and the body One end of the portion facing the head portion may be fixed to the first heat dissipating body.

In one embodiment, the second heat dissipation body may be a plate-shaped heat dissipation plate.

In one embodiment, the second radiator may be made of aluminum.

In one embodiment, the second radiator may be provided to thermally contact a pair of adjacent power semiconductor devices.

In one embodiment, the via is provided in plurality to electrically connect the FR4 PCB and the circuit pattern.

In one embodiment, the second radiator is a housing case having a hollow, and the housing case includes: a first surface contacting the power semiconductor device; a second surface contacting the first heat dissipating body; and a third surface connecting the first surface and the second surface from both sides.

In one embodiment, the heat-dissipating screw may couple the center of the first heat-dissipating body and the second heat-dissipating body.

In one embodiment, a first screw hole is formed in the FR4 PCB and a second screw hole is formed in the heat dissipation pad, and inner walls of the first screw hole and the second screw hole may be coated with a thermally conductive material. .

A double heat dissipation structure for a surface-mounted power semiconductor device according to an embodiment of the present invention is provided to dissipate heat through a heat dissipation pad, a heat dissipation screw, a circuit pattern, a first heat sink and a second heat sink, so that the vertical and horizontal directions are Since heat can be radiated in a direction, heat dissipation efficiency can be improved.

In addition, the double heat dissipation structure for a surface-mounted power semiconductor according to an embodiment of the present invention includes a second heat dissipation body made of aluminum on one side of a power semiconductor device, and the first heat dissipation body and the second heat dissipation through a heat dissipation screw and a via. Since the body is thermally connected, heat can be directly radiated from the surface of the power semiconductor device and heat from the second radiator can be transferred to the radiator, so heat dissipation efficiency can be further improved.

In addition, in the double heat dissipation structure for a surface-mounted power semiconductor according to an embodiment of the present invention, a heat dissipation screw penetrates the FR4 PCB and combines the second heat sink and the first heat sink, thereby being resistant to deformation from thermal and mechanical stress. Reliability of the power semiconductor device can be improved.

1 is a cross-sectional view showing a double heat dissipation structure for a surface-mounted power semiconductor according to a first embodiment of the present invention.
2 is a side view illustrating a double heat dissipation structure for a surface-mounted power semiconductor according to a first embodiment of the present invention.
3 is an exploded view showing a double heat dissipation structure for a surface-mounted power semiconductor according to a first embodiment of the present invention.
4 is a cross-sectional view showing a heat dissipation path of a double heat dissipation structure for a surface-mounted power semiconductor according to a first embodiment of the present invention.
5 is a photograph showing a 3D analysis result of a comparative example and a dual heat dissipation structure for a surface-mounted power semiconductor according to a first embodiment of the present invention.
6 is a photograph showing an analysis model and temperature distribution of a comparative example and a dual heat dissipation structure for a surface-mounted power semiconductor according to a first embodiment of the present invention.
7 is a photograph showing the temperature change of a power semiconductor device over time in a comparative example and a dual heat dissipation structure for a surface-mounted power semiconductor according to the first embodiment of the present invention.
8 is a cross-sectional view showing a housing case having a double heat dissipation structure for a surface-mounted power semiconductor according to a second embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings, embodiments of the present invention will be described in detail so that those skilled in the art can easily carry out the present invention. This invention may be embodied in many different forms and is not limited to the embodiments set forth herein. In order to clearly describe the present invention in the drawings, parts irrelevant to the description are omitted, and the same reference numerals are assigned to the same or similar components throughout the specification.

The embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art, and the embodiments described below may be modified in many different forms, and the embodiments of the present invention The scope is not limited to the examples below. Rather, these embodiments are provided so that this invention will be thorough and complete, and will fully convey the spirit of the invention to those skilled in the art.

Hereinafter, embodiments of the present invention will be described with reference to drawings schematically showing embodiments of the present invention. In the drawings, variations of the depicted shape may be expected, depending, for example, on manufacturing techniques and/or tolerances. Therefore, the embodiments of the present invention should not be construed as being limited to the specific shape of the area shown in this specification, but should include, for example, a change in shape caused by manufacturing.

1 is a cross-sectional view showing a double heat dissipation structure for a surface-mounted power semiconductor according to a first embodiment of the present invention, and FIG. 2 is a side view showing a double heat dissipation structure for a surface-mounted power semiconductor according to a first embodiment of the present invention. 3 is an exploded view showing a double heat dissipation structure for a surface-mounted power semiconductor according to a first embodiment of the present invention.

1 to 3, the double heat dissipation structure for a surface-mounted power semiconductor according to an embodiment of the present invention includes an FR4 PCB 110, a heat dissipation pad 120, a first heat dissipation body 130, and a second heat dissipation A sieve 140 and a heat dissipation screw 170 may be included.

The double heat dissipation structure 100 for surface-mounted power semiconductors is a heat dissipation structure for power semiconductor devices 10 in the form of surface mount (SMD, SURFACE MOUNTED DEVICE), in which the power semiconductor device 10 is mounted on the FR4 PCB 110 based on the power module. Here, the power semiconductor device 10 may be mounted on one side of the FR4 PCB 110 through drain, gate and source terminals.

Since the power semiconductor devices 10 are used in plurality in the power conversion system, they may be disposed adjacent to each other on the FR4 PCB 110. For example, the power semiconductor device 10 may be formed in at least one pair. Here, the power semiconductor devices 10 may be arranged in a row, pair by pair. For example, the power semiconductor device 10 may be a gallium nitride (GaN) power semiconductor device. Such a gallium nitride power semiconductor device may be made of a material superior in switching loss, switching speed, and environmental resistance to existing silicon power semiconductor devices. However, it is not limited thereto, and the power semiconductor device 10 may be a hydrocarbon (SiC) power semiconductor device.

The FR4 PCB 110 may include a first screw hole 111, a via 112, and a circuit pattern 113.

The first screw hole 111 may be located in the central portion of the FR4 PCB 110 and may be formed to pass through the FR4 PCB 110 . At this time, the diameter of the first screw hole 111 may be formed to a size corresponding to the diameter of the heat radiation screw 170 so that the heat radiation screw 170 to be described later is inserted and fastened. In addition, a female thread may be formed on the outer circumferential surface of the first screw hole 111 so that the heat dissipation screw 170 is fastened thereto.

The via 112 may be formed to pass through the FR4 PCB 110. In this case, the via 112 may be formed at a position corresponding to the power semiconductor device 10 and perpendicular to the power semiconductor device 10 .

Here, the via 112 may be made of a conductive material and a metal having excellent thermal conductivity. That is, the via 112 may function as a thermal via for dissipating heat and a via for electrical connection.

The circuit pattern 113 may be provided on both sides of the FR4 PCB 110. The circuit pattern 113 may be a conductive line for electrically connecting the power semiconductor device 10 to other components. That is, the circuit pattern 113 may be a circuit pattern of a power conversion system formed by the power semiconductor device 10 . At this time, the circuit pattern 113 may be electrically connected through the via 112 .

The heat dissipation pad 120 may be provided on the other side of the FR4 PCB 110 facing the power semiconductor device 10 . At this time, the heat dissipation pad 120 may be provided to be in contact with one surface of the circuit pattern 113 by applying an adhesive material to one surface.

The heat dissipation pad 120 may be made of a material having high thermal conductivity and low electrical conductivity. That is, the heat dissipation pad 120 may function as an insulated thermal pad for insulation between the FR4 PCB 110 and the first heat dissipation body 130 to be described later.

The heat dissipation pad 120 may include a second screw hole 121 .

The second screw hole 121 may be located at the center of the heat dissipation pad 120 and may be formed to pass through the heat dissipation pad 120 . At this time, the diameter of the second screw hole 121 may be formed to a size corresponding to the diameter of the heat radiation screw 170 so that the heat radiation screw 170 to be described later is inserted and fastened. In addition, a female thread may be formed on the outer circumferential surface of the second screw hole 121 so that the heat dissipation screw 170 is fastened thereto.

An adhesive material may be applied to one surface of the first heat dissipating body 130 to contact one surface of the heat dissipation pad 120 . The first radiator 130 is for dissipating heat generated from the power semiconductor device 10 to the outside, and may be provided in thermal contact with the power semiconductor device 10 . In this case, the first radiator 130 may have a rectangular parallelepiped shape having a certain volume to dissipate heat to the outside.

The first radiator 130 may include a fastening groove 131 and a slit 132 .

The fastening groove 131 is formed in the central portion of the first heat dissipation body 130 to fix the heat dissipation screw 170, and may be formed in a size corresponding to the diameter of the heat dissipation screw 170. At this time, one end of the heat dissipation screw 170 may be inserted into the fastening groove 131 and fastened thereto.

The slit 132 may be formed in a rectangular shape inside the first radiator 130 . In this case, a plurality of slits 132 may be formed perpendicularly to the heat dissipation pad 120 . The slit 132 is formed to pass through the first heat dissipating body 130, and as air flows, heat can be released. In addition, the surface area of the first heat sink 130 may be increased by the slit 132 . Therefore, the first radiator 130 can improve heat dissipation efficiency.

The second radiator 140 may be provided to be in contact with the other surface of the power semiconductor device 10 facing the FR4 PCB 110. At this time, the second radiator 140 may thermally contact a pair of adjacent power semiconductor devices 10 to directly dissipate heat from the surface of the power semiconductor devices 10 . Here, the second heat dissipation body 140 may be formed of a plate-shaped heat dissipation plate to maximize the contact area with the surface of the power semiconductor device 10 .

The second radiator 140 may be made of aluminum having high thermal conductivity. However, it is not limited thereto, and the second radiator 140 may be made of copper and magnesium, which is a lightweight material.

Through this, the double heat dissipation structure 100 for a surface-mounted power semiconductor according to the first embodiment of the present invention includes a second heat dissipation body 140 made of aluminum on one side of the power semiconductor device 10 and a heat dissipation screw ( 170) and the via 112, the first heat sink 130 and the second heat sink 140 are thermally connected, so that heat is directly radiated from the surface of the power semiconductor device 10, and at the same time, the second heat sink 140 Since heat can be transferred to the heat sink, heat dissipation efficiency can be further improved.

The second heat sink 140 may include a seating hole 141 .

The seating hole 141 is formed in the central portion of the second heat dissipating body 140, and a heat dissipating screw 170 may be inserted and seated therein. At this time, the seating hole 141 may be formed in a shape corresponding to the shape of the heat radiation screw 170 so that the heat radiation screw 170 is inserted and bolted.

The heat dissipation screw 170 may be provided to couple the first heat dissipation body 130 and the second heat dissipation body 140 together. In this case, the heat-dissipating screw 170 may be coupled at the center of the first heat-dissipating body 130 and the second heat-dissipating body 140 .

The heat dissipation screw 170 may be inserted into the seating hole 141 of the second heat dissipation body 140 and fixed to the fastening groove 131 through the FR4 PCB 110 and the heat dissipation pad 120 .

The heat dissipation screw 170 may include a head portion 171 and a body portion 172 . At this time, the heat radiation screw 170 may be a flat head bolt.

The head portion 171 may be formed in the shape of a flat head of a flat head bolt, and may be inserted into and seated in the seating hole 141 of the second heat dissipating body 140 . At this time, one surface of the head portion 171 may be tightened and fixed to coincide with one surface of the second heat dissipating body 140 facing the power semiconductor device 10 .

The body portion 172 extends from the head portion 171 so that one end opposite to the head portion 171 may be coupled to the fastening groove 131 of the first radiator 130 . At this time, the diameter of the body portion 172 may be formed to a size corresponding to the fastening groove 131 of the first heat dissipating body 130 .

The body portion 172 may pass through the first screw hole 111 of the FR4 PCB 110 and the second screw hole 121 of the heat dissipation pad 120 and be fixed to the fastening groove 131 . Male threads may be formed on the outer circumferential surface of the body portion 172 so as to be fixed to the first screw hole 111 and the second screw hole 121 .

Through this, in the double heat dissipation structure for a surface-mounted power semiconductor according to the first embodiment of the present invention, the heat dissipation screw 170 penetrates the FR4 PCB 110 to form a second heat sink 140 and a first heat sink 130 ), it is possible to improve the reliability of the power semiconductor device 10 by being robust against deformation from thermal and mechanical stress.

4 is a cross-sectional view showing a heat dissipation path of a double heat dissipation structure for a surface-mounted power semiconductor according to a first embodiment of the present invention.

Referring to FIG. 4 , heat generated from the power semiconductor device 10 is transferred in a vertical direction to the FR4 PCB 110 through the via 112 first. At this time, the heat generated from the power semiconductor device 10 is transmitted in a vertical direction to the first heat dissipating body 130 through the heat dissipating pad 120 provided on the upper side of the FR4 PCB 110. That is, since heat is transferred to the first radiator 130 through the vias of the heat dissipation pad 120 and the FR4 PCB 110, the FR4 PCB 110 of the power semiconductor device 10 conducts heat over a wide range, The heat dissipation effect can be improved.

In addition, heat generated from the power semiconductor device 10 is transmitted in a horizontal direction with respect to the FR4 PCB 110 through the circuit pattern 113. Here, the circuit pattern 113 provided on the side of the power semiconductor device 10 directly transfers the heat generated in the power semiconductor device 10 in the horizontal direction, and the circuit pattern 113 provided on the opposite side of the power semiconductor device 10 ) transfers the heat transmitted in the vertical direction through the via 112 in the horizontal direction.

At the same time, heat generated from the power semiconductor device 10 is transmitted in a vertical direction with respect to the second radiator 140 contacting one surface of the power semiconductor device 10 . At this time, heat generated from the power semiconductor device 10 may be emitted to the outside in a vertical direction through the surface of the second radiator 140 . That is, since heat can be simultaneously transferred in the upper and lower vertical directions of the power semiconductor device 10, the heat dissipation effect can be improved.

In addition, heat generated from the power semiconductor device 10 is transferred to the power semiconductor device 10 in a horizontal direction through the second radiator 140 . At this time, the heat generated from the power semiconductor device 10 is transmitted in a vertical direction through the heat dissipation screw 170 and transferred to the first heat dissipation body 130 .

As described above, the dual heat dissipation structure 100 for a surface-mounted power semiconductor may have a heat transfer path toward the first heat sink 130 and a heat transfer path toward the second heat sink 140.

Through this, since the FR4 PCB 110 of the power semiconductor device according to the first embodiment of the present invention can emit heat through the PCB pattern and the via 112 for an instantaneous high power specification, the thermal conductivity increases, Due to the structure of the second radiator 140 and the heat dissipation screw 170, heat is released more quickly, so it is suitable for high power specifications.

Hereinafter, experimental results of the double heat dissipation structure 100 for a surface-mounted power semiconductor according to a first embodiment of the present invention and a comparative example will be described with reference to FIGS. 5 to 7 .

First, the comparative example is an FR4 PCB heat dissipation structure of an SMD type power semiconductor device, which is in contact with the power semiconductor device and does not have a heat sink and a heat dissipation screw formed on the side opposite to the FR4 PCB, and from the power semiconductor device to the FR4 PCB It is a structure in which heat is transferred only to the radiator formed on the side. On the other hand, in the double heat dissipation structure 100 for a surface-mounted power semiconductor according to the first embodiment of the present invention, the size of the first heat sink is smaller than that of the comparative example, but a second heat sink and a heat sink are additionally provided. Thus, the total height was the same as that of the comparative example.

5 is a photograph showing a 3D analysis result of a comparative example according to the first embodiment of the present invention and a dual heat dissipation structure for a surface-mounted power semiconductor, and FIG. 6 is a comparative example according to the first embodiment of the present invention and a surface-mounted 7 is a photograph showing an analysis model and temperature distribution of a double heat dissipation structure for a type power semiconductor, and FIG. 7 is a comparative example according to an embodiment of the present invention and a temperature of a power semiconductor device over time of a double heat dissipation structure for a surface-mount type power semiconductor. This is a picture showing the change.

Referring to FIG. 5, in the case of the comparative example of (a), the heat generated from the power semiconductor device was not sufficiently discharged to the outside, so the temperature rose high due to heat generation, and as a result, the FR4 PCB temperature also increased. That is, due to the low thermal conductivity characteristics, the power semiconductor element did not sufficiently dissipate heat, so the temperature was high in red, and the temperature of the FR4 PCB was not very low due to the effect of heat generation of the power semiconductor element. From this, it can be seen that heat transfer to the radiator is not sufficiently achieved.

On the other hand, in the case of the heat dissipation structure 100 for a surface-mounted power semiconductor according to the first embodiment of the present invention of (b), the heat generated from the power semiconductor device completely escapes to the outside through the first radiator and the second radiator. appeared to be released. That is, due to the high thermal conductivity, the temperature of the power semiconductor device was lower than that of the heat dissipation structure of the comparative example, and the FR4 PCB also showed a sufficiently low temperature. From this, it can be seen that heat transfer to the first radiator and the second radiator is more effective than in (a).

Referring to FIG. 6 , in the case of the comparative example of (a), the temperature of the power semiconductor device was concentrated and increased.

On the other hand, in the case of (b) the heat dissipation structure 100 for a surface-mounted power semiconductor according to the first embodiment of the present invention, the temperature of the power semiconductor device was found to be lower than that of the comparative example. That is, it can be seen that the heat generated in the power semiconductor is transferred to the first radiator and the second radiator, and heat dissipation to the outside is more effective than (a).

Referring to FIG. 7 , in the case of Comparative Example, it was found that the temperature rapidly increased within a short period of time as time passed.

On the other hand, in the case of the heat dissipation structure 100 for a surface-mounted power semiconductor according to the first embodiment of the present invention, the width of the initial heat generation temperature increase is not large, and the temperature of the power semiconductor device is lower than the temperature of the comparative example even after the same time has elapsed. It was found that the temperature increase was not large even with the continuous passage of time. As a result, since the heat generated in the power semiconductor can be effectively radiated to maintain the temperature of the power semiconductor device at a lower state than that of the comparative example, initial heat dissipation is excellent and reliability of the power semiconductor device can be secured.

8 is a cross-sectional view showing a housing case having a double heat dissipation structure for a surface-mounted power semiconductor according to a second embodiment of the present invention.

As shown in FIG. 8, the double heat dissipation structure 200 for a surface-mounted power semiconductor according to the second embodiment of the present invention includes an FR4 PCB 110, a heat dissipation pad 120, a first heat sink 130, A second heat dissipation body 240 and a heat dissipation screw 170 may be included. The double heat dissipation structure 200 for a surface-mounted power semiconductor according to the second embodiment of the present invention is the double heat dissipation structure 100 for a surface-mounted power semiconductor according to the first embodiment except for the second radiator 240. Since it is the same as in the second embodiment, the same reference numerals as those of the first embodiment are used for the same components as those of the first embodiment, and detailed description thereof will be omitted.

The second radiator 240 may be a housing case having a hollow inside. That is, the second heat dissipation body 240 may be formed to surround the FR4 PCB 110 , the heat dissipation pad 120 , the first heat dissipation body 130 and the power semiconductor device 10 . At this time, the second radiator 240 may be made of aluminum having high thermal conductivity. However, it is not limited thereto, and the second radiator 240 may be made of copper and magnesium, which is a lightweight material.

The second heat sink 240 may include a first surface 241 , a second surface 242 and a third surface 243 .

The first surface 241 may be provided to contact the other surface of the power semiconductor device 10 facing the FR4 PCB 110. At this time, the first surface 241 may thermally contact the power semiconductor device 10 to directly dissipate heat from the surface of the power semiconductor device 10 . In addition, the heat dissipation screw 170 may be seated at the central portion of the first surface 241 . At this time, a seating hole (not shown) corresponding to the seating hole 141 of FIG. 3 may be provided on the first surface 241 .

The second surface 242 may be provided to contact one surface of the first heat dissipating body 130 . The second surface 242 may contact the top surface of the first heat dissipating body 130 . At this time, the second surface 242 may be in thermal contact with the first heat dissipating body 130 to directly dissipate heat from the surface of the first heat dissipating body 130 .

The third surface 243 may be provided perpendicular to the first surface 241 and the second surface 242 so as to connect the first surface 241 and the second surface 242 from both sides. In this case, the third surface 243 may be formed as a pair.

Through this, the double heat dissipation structure 200 for a surface-mounted power semiconductor according to the second embodiment of the present invention configures the second heat sink 240 as an integrated power semiconductor module, so that the surface-mounted power semiconductor device Heat dissipation performance, deformation resistance due to heat and mechanical stress can be further improved, and reliability can be further increased.

Although one embodiment of the present invention has been described above, the spirit of the present invention is not limited to the embodiments presented herein, and those skilled in the art who understand the spirit of the present invention may add elements within the scope of the same spirit. However, other embodiments can be easily proposed by means of changes, deletions, additions, etc., but these will also fall within the scope of the present invention.

10: power semiconductor device
100, 200: Double heat dissipation structure for surface-mounted power semiconductors
110: FR4 PCB 111: first screw hole
112: via 113: circuit pattern
120: heat dissipation pad 121: second screw hole
130: first radiator 131: fastening groove
132: slit 140, 240: second radiator
141: seating hole 170: heat radiation screw
171: head 172: body
241: first surface 242: second surface
243: third side

Claims (11)

An FR4 PCB having circuit patterns on both sides and electrically connected to the circuit patterns through vias provided therethrough, and having a power semiconductor device mounted on one side thereof;
a heat dissipation pad provided to contact the other side of the FR4 PCB facing the power semiconductor device;
a first heat dissipating body having one surface in contact with the heat dissipating pad;
a second heat sink provided to contact the other surface of the power semiconductor device facing the FR4 PCB; and
A heat dissipation screw provided to couple the second heat sink and the first heat sink through the FR4 PCB; includes,
The via, the heat dissipation pad, and the first radiator transmit heat generated from the power semiconductor device in a vertical direction, and the circuit pattern and the second radiator transmit heat generated from the power semiconductor device in a horizontal direction, , The heat dissipation screw transfers the heat generated from the power semiconductor device from the second radiator to the first radiator,
The second heat dissipation body is a double heat dissipation structure for a surface-mounted power semiconductor made of aluminum. According to claim 1,
The double heat dissipation structure for a surface-mounted power semiconductor in which the first radiator has a rectangular parallelepiped shape and has a plurality of rectangular slits formed therein. According to claim 1,
The heat-dissipating screw may include a head portion seated on the second heat-dissipating body; and
A dual heat dissipation structure for a surface-mounted power semiconductor including a body portion extending from the head of the heat dissipation screw to pass through the FR4 PCB and having one end coupled to a fastening groove formed in the first heat dissipation body. According to claim 3,
The heat dissipation screw is a countersunk head bolt,
The head is formed in a dish head shape and is fixed to the second heat sink such that one surface of the head coincides with one surface of the second heat sink,
A dual heat dissipation structure for a surface-mounted power semiconductor in which one end of the body portion opposite to the head portion is fixed to the first heat sink. According to claim 1,
The second heat dissipation body is a double heat dissipation structure for a surface-mounted power semiconductor having a plate-shaped heat dissipation plate. delete According to claim 1,
The double heat dissipation structure for a surface-mounted power semiconductor, wherein the second heat sink is provided to thermally contact a pair of power semiconductor devices adjacent to each other. According to claim 1,
A double heat dissipation structure for a surface-mounted power semiconductor in which a plurality of vias are provided to electrically connect the FR4 PCB and the circuit pattern. According to claim 1,
The second radiator is a housing case having a hollow,
The housing case,
a first surface contacting the power semiconductor device;
a second surface contacting the first heat dissipating body; and
A dual heat dissipation structure for a surface-mounted power semiconductor including a third surface connecting the first surface and the second surface from both sides. According to claim 1,
The heat-dissipating screw is a double heat-dissipating structure for a surface-mounted power semiconductor that couples the center of the first heat-dissipating body and the second heat-dissipating body. According to claim 1,
A first screw hole is formed in the FR4 PCB and a second screw hole is formed in the heat dissipation pad,
The double heat dissipation structure for a surface-mounted power semiconductor in which inner walls of the first screw hole and the second screw hole are coated with a thermally conductive material.

Images