KR102564228B1 - 유기금속화학기상증착장치 - Google Patents

유기금속화학기상증착장치 Download PDF

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Publication number
KR102564228B1
KR102564228B1 KR1020210056104A KR20210056104A KR102564228B1 KR 102564228 B1 KR102564228 B1 KR 102564228B1 KR 1020210056104 A KR1020210056104 A KR 1020210056104A KR 20210056104 A KR20210056104 A KR 20210056104A KR 102564228 B1 KR102564228 B1 KR 102564228B1
Authority
KR
South Korea
Prior art keywords
heater block
substrate
gas
chamber
process gas
Prior art date
Application number
KR1020210056104A
Other languages
English (en)
Korean (ko)
Other versions
KR20220148689A (ko
Inventor
김병조
조광일
최성철
장종진
Original Assignee
주식회사 테스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 테스 filed Critical 주식회사 테스
Priority to KR1020210056104A priority Critical patent/KR102564228B1/ko
Priority to PCT/KR2022/005452 priority patent/WO2022231181A1/fr
Publication of KR20220148689A publication Critical patent/KR20220148689A/ko
Application granted granted Critical
Publication of KR102564228B1 publication Critical patent/KR102564228B1/ko

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020210056104A 2021-04-29 2021-04-29 유기금속화학기상증착장치 KR102564228B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020210056104A KR102564228B1 (ko) 2021-04-29 2021-04-29 유기금속화학기상증착장치
PCT/KR2022/005452 WO2022231181A1 (fr) 2021-04-29 2022-04-15 Appareil de dépôt chimique en phase vapeur par composés organométalliques

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020210056104A KR102564228B1 (ko) 2021-04-29 2021-04-29 유기금속화학기상증착장치

Publications (2)

Publication Number Publication Date
KR20220148689A KR20220148689A (ko) 2022-11-07
KR102564228B1 true KR102564228B1 (ko) 2023-08-09

Family

ID=83848201

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020210056104A KR102564228B1 (ko) 2021-04-29 2021-04-29 유기금속화학기상증착장치

Country Status (2)

Country Link
KR (1) KR102564228B1 (fr)
WO (1) WO2022231181A1 (fr)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011199154A (ja) 2010-03-23 2011-10-06 Stanley Electric Co Ltd Mocvd装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3131005B2 (ja) * 1992-03-06 2001-01-31 パイオニア株式会社 化合物半導体気相成長装置
US6331212B1 (en) * 2000-04-17 2001-12-18 Avansys, Llc Methods and apparatus for thermally processing wafers
JP2004063555A (ja) * 2002-07-25 2004-02-26 Matsushita Electric Ind Co Ltd 半導体の製造装置及びその製造方法
JP4193883B2 (ja) * 2006-07-05 2008-12-10 住友電気工業株式会社 有機金属気相成長装置
JP4466723B2 (ja) * 2007-11-21 2010-05-26 住友電気工業株式会社 有機金属気相成長装置
KR101574948B1 (ko) * 2014-04-10 2015-12-07 주식회사 테스 공정가스의 흐름조정장치
KR101651880B1 (ko) * 2014-10-13 2016-08-29 주식회사 테스 유기금속화학기상증착장치
KR101722915B1 (ko) * 2014-10-13 2017-04-04 주식회사 테스 유기금속화학기상증착장치
KR101627102B1 (ko) * 2014-10-14 2016-06-03 주식회사 테스 유기금속화학기상증착장치

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011199154A (ja) 2010-03-23 2011-10-06 Stanley Electric Co Ltd Mocvd装置

Also Published As

Publication number Publication date
KR20220148689A (ko) 2022-11-07
WO2022231181A1 (fr) 2022-11-03

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