KR102550482B1 - X-선 산란계측을 이용한 깊은 구조체들에 대한 프로세스 모니터링 - Google Patents

X-선 산란계측을 이용한 깊은 구조체들에 대한 프로세스 모니터링 Download PDF

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KR102550482B1
KR102550482B1 KR1020197038446A KR20197038446A KR102550482B1 KR 102550482 B1 KR102550482 B1 KR 102550482B1 KR 1020197038446 A KR1020197038446 A KR 1020197038446A KR 20197038446 A KR20197038446 A KR 20197038446A KR 102550482 B1 KR102550482 B1 KR 102550482B1
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ray
parameters
structures
tool
manufacturing tool
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KR20200003256A (ko
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안토니오 겔리노
태디어스 제라드 디지우라
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케이엘에이 코포레이션
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/201—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials by measuring small-angle scattering
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/20083—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials by using a combination of at least two measurements at least one being a transmission measurement and one a scatter measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/05—Investigating materials by wave or particle radiation by diffraction, scatter or reflection
    • G01N2223/054—Investigating materials by wave or particle radiation by diffraction, scatter or reflection small angle scatter
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Drying Of Semiconductors (AREA)
KR1020197038446A 2017-05-30 2018-05-29 X-선 산란계측을 이용한 깊은 구조체들에 대한 프로세스 모니터링 Active KR102550482B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020237021732A KR102722474B1 (ko) 2017-05-30 2018-05-29 X-선 산란계측을 이용한 깊은 구조체들에 대한 프로세스 모니터링

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201762512297P 2017-05-30 2017-05-30
US62/512,297 2017-05-30
US201762572566P 2017-10-16 2017-10-16
US62/572,566 2017-10-16
US15/990,749 2018-05-28
US15/990,749 US10727142B2 (en) 2017-05-30 2018-05-28 Process monitoring of deep structures with X-ray scatterometry
PCT/US2018/034935 WO2018222613A1 (en) 2017-05-30 2018-05-29 Process monitoring for deep structures with x-ray scatterometry

Related Child Applications (1)

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KR1020237021732A Division KR102722474B1 (ko) 2017-05-30 2018-05-29 X-선 산란계측을 이용한 깊은 구조체들에 대한 프로세스 모니터링

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KR20200003256A KR20200003256A (ko) 2020-01-08
KR102550482B1 true KR102550482B1 (ko) 2023-06-30

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KR1020237021732A Active KR102722474B1 (ko) 2017-05-30 2018-05-29 X-선 산란계측을 이용한 깊은 구조체들에 대한 프로세스 모니터링

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US (3) US10727142B2 (enExample)
JP (1) JP7250705B2 (enExample)
KR (2) KR102550482B1 (enExample)
CN (1) CN110603435A (enExample)
WO (1) WO2018222613A1 (enExample)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10295485B2 (en) 2013-12-05 2019-05-21 Sigray, Inc. X-ray transmission spectrometer system
US10727142B2 (en) * 2017-05-30 2020-07-28 Kla-Tencor Corporation Process monitoring of deep structures with X-ray scatterometry
EP4235305A1 (en) 2017-09-27 2023-08-30 ASML Netherlands B.V. A method in the manufacturing process of a device, a non-transitory computer-readable medium and a system configured to perform the method
KR102658977B1 (ko) 2017-11-03 2024-04-18 도쿄엘렉트론가부시키가이샤 기능성 마이크로 전자 디바이스의 수율 향상
WO2019236384A1 (en) 2018-06-04 2019-12-12 Sigray, Inc. Wavelength dispersive x-ray spectrometer
US10964566B2 (en) 2018-06-29 2021-03-30 Taiwan Semiconductor Manufacturing Go., Ltd. Machine learning on overlay virtual metrology
CN112470245B (zh) 2018-07-26 2025-03-18 斯格瑞公司 高亮度x射线反射源
CN112602184A (zh) * 2018-07-31 2021-04-02 朗姆研究公司 确定图案化的高深宽比结构阵列中的倾斜角度
US11056308B2 (en) 2018-09-07 2021-07-06 Sigray, Inc. System and method for depth-selectable x-ray analysis
EP3629088A1 (en) * 2018-09-28 2020-04-01 ASML Netherlands B.V. Providing a trained neural network and determining a characteristic of a physical system
US11328964B2 (en) * 2018-12-13 2022-05-10 Applied Materials, Inc. Prescriptive analytics in highly collinear response space
US11990380B2 (en) * 2019-04-19 2024-05-21 Kla Corporation Methods and systems for combining x-ray metrology data sets to improve parameter estimation
JP7168985B2 (ja) * 2019-04-22 2022-11-10 株式会社リガク 微細構造の解析方法、装置およびプログラム
US11139142B2 (en) * 2019-05-23 2021-10-05 Applied Materials, Inc. High-resolution three-dimensional profiling of features in advanced semiconductor devices in a non-destructive manner using electron beam scanning electron microscopy
US11966203B2 (en) * 2019-08-21 2024-04-23 Kla Corporation System and method to adjust a kinetics model of surface reactions during plasma processing
DE112020004169T5 (de) 2019-09-03 2022-05-25 Sigray, Inc. System und verfahren zur computergestützten laminografieröntgenfluoreszenz-bildgebung
US11867595B2 (en) 2019-10-14 2024-01-09 Industrial Technology Research Institute X-ray reflectometry apparatus and method thereof for measuring three dimensional nanostructures on flat substrate
US11415898B2 (en) * 2019-10-14 2022-08-16 Kla Corporation Signal-domain adaptation for metrology
US11610297B2 (en) * 2019-12-02 2023-03-21 Kla Corporation Tomography based semiconductor measurements using simplified models
US11698251B2 (en) 2020-01-07 2023-07-11 Kla Corporation Methods and systems for overlay measurement based on soft X-ray Scatterometry
US11175243B1 (en) 2020-02-06 2021-11-16 Sigray, Inc. X-ray dark-field in-line inspection for semiconductor samples
US11761913B2 (en) * 2020-05-04 2023-09-19 Bruker Technologies Ltd. Transmission X-ray critical dimension (T-XCD) characterization of shift and tilt of stacks of high-aspect-ratio (HAR) structures
CN115667896B (zh) 2020-05-18 2024-06-21 斯格瑞公司 使用晶体分析器和多个检测元件的x射线吸收光谱的系统和方法
GB2596061A (en) * 2020-06-09 2021-12-22 Nordson Corp An x-ray inspection system, an x-ray imaging accessory, a sample support, a kit, and a method of using an x-ray inspection system
US11688616B2 (en) 2020-07-22 2023-06-27 Applied Materials, Inc. Integrated substrate measurement system to improve manufacturing process performance
US12283503B2 (en) 2020-07-22 2025-04-22 Applied Materials, Inc. Substrate measurement subsystem
US11371148B2 (en) * 2020-08-24 2022-06-28 Applied Materials, Inc. Fabricating a recursive flow gas distribution stack using multiple layers
US11549895B2 (en) 2020-09-17 2023-01-10 Sigray, Inc. System and method using x-rays for depth-resolving metrology and analysis
US11280749B1 (en) * 2020-10-23 2022-03-22 Applied Materials Israel Ltd. Holes tilt angle measurement using FIB diagonal cut
US12237158B2 (en) * 2020-11-24 2025-02-25 Applied Materials, Inc. Etch feedback for control of upstream process
KR102808542B1 (ko) * 2020-11-24 2025-05-16 어플라이드 머티어리얼스, 인코포레이티드 계측을 위한 최적화 기반 이미지 처리
WO2022126071A1 (en) 2020-12-07 2022-06-16 Sigray, Inc. High throughput 3d x-ray imaging system using a transmission x-ray source
US12480892B2 (en) 2020-12-07 2025-11-25 Sigray, Inc. High throughput 3D x-ray imaging system using a transmission x-ray source
US11709477B2 (en) 2021-01-06 2023-07-25 Applied Materials, Inc. Autonomous substrate processing system
US12235624B2 (en) 2021-12-21 2025-02-25 Applied Materials, Inc. Methods and mechanisms for adjusting process chamber parameters during substrate manufacturing
JP7687681B2 (ja) * 2021-12-21 2025-06-03 株式会社リガク 情報処理装置、情報処理方法、プログラム及びｘ線分析装置
US12339645B2 (en) 2022-01-25 2025-06-24 Applied Materials, Inc. Estimation of chamber component conditions using substrate measurements
US12216455B2 (en) 2022-01-25 2025-02-04 Applied Materials, Inc. Chamber component condition estimation using substrate measurements
US12148647B2 (en) 2022-01-25 2024-11-19 Applied Materials, Inc. Integrated substrate measurement system
EP4231097A1 (en) * 2022-02-22 2023-08-23 ASML Netherlands B.V. Inspection tool and barrier for use therein
US12360067B2 (en) 2022-03-02 2025-07-15 Sigray, Inc. X-ray fluorescence system and x-ray source with electrically insulative target material
WO2023177981A1 (en) 2022-03-15 2023-09-21 Sigray, Inc. System and method for compact laminography utilizing microfocus transmission x-ray source and variable magnification x-ray detector
WO2023215204A1 (en) 2022-05-02 2023-11-09 Sigray, Inc. X-ray sequential array wavelength dispersive spectrometer
IL303689A (en) * 2022-07-19 2024-02-01 Bruker Tech Ltd Analysis of X-ray scattering data using deep learning
TWI814579B (zh) 2022-09-13 2023-09-01 財團法人工業技術研究院 用以量測平整基板上之三維奈米結構的x射線反射儀設備及方法
US12493004B2 (en) 2022-09-28 2025-12-09 Industrial Technology Research Institute Method for determining parameters of three dimensional nanostructure and apparatus applying the same
US12209977B2 (en) 2023-02-16 2025-01-28 Sigray, Inc. X-ray detector system with at least two stacked flat Bragg diffractors
TW202443110A (zh) * 2023-04-12 2024-11-01 日商東京威力科創股份有限公司 檢查用基板、檢查方法及基板處理系統
US12181423B1 (en) 2023-09-07 2024-12-31 Sigray, Inc. Secondary image removal using high resolution x-ray transmission sources
US20250130183A1 (en) * 2023-10-20 2025-04-24 Applied Materials, Inc. Determining tilt angle of substrate structures utilizing angular fourier decomposition of scattering images
US12429437B2 (en) 2023-11-07 2025-09-30 Sigray, Inc. System and method for x-ray absorption spectroscopy using spectral information from two orthogonal planes
CN117690788A (zh) * 2023-12-12 2024-03-12 粤芯半导体技术股份有限公司 氧化层沟槽形成方法及半导体器件
US12429436B2 (en) 2024-01-08 2025-09-30 Sigray, Inc. X-ray analysis system with focused x-ray beam and non-x-ray microscope
US12431256B2 (en) 2024-02-15 2025-09-30 Sigray, Inc. System and method for generating a focused x-ray beam
EP4607576A1 (en) * 2024-02-20 2025-08-27 ASML Netherlands B.V. Machine learning assisted pupil metrology

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007285923A (ja) 2006-04-18 2007-11-01 Jordan Valley Semiconductors Ltd 反射モードのｘ線回折を用いた限界寸法の測定
US20150204802A1 (en) 2014-01-23 2015-07-23 Heath A. Pois Methods and systems for measuring periodic structures using multi-angle x-ray reflectance scatterometry (xrs)
US20160202193A1 (en) * 2015-01-14 2016-07-14 Kla-Tencor Corporation Measurement System Optimization For X-Ray Based Metrology

Family Cites Families (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5608526A (en) 1995-01-19 1997-03-04 Tencor Instruments Focused beam spectroscopic ellipsometry method and system
US6023338A (en) 1996-07-12 2000-02-08 Bareket; Noah Overlay alignment measurement of wafers
US5859424A (en) 1997-04-08 1999-01-12 Kla-Tencor Corporation Apodizing filter system useful for reducing spot size in optical measurements and other applications
US6429943B1 (en) 2000-03-29 2002-08-06 Therma-Wave, Inc. Critical dimension analysis with simultaneous multiple angle of incidence measurements
US6787773B1 (en) 2000-06-07 2004-09-07 Kla-Tencor Corporation Film thickness measurement using electron-beam induced x-ray microanalysis
US7317531B2 (en) 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US7541201B2 (en) 2000-08-30 2009-06-02 Kla-Tencor Technologies Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
US7068833B1 (en) 2000-08-30 2006-06-27 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US6812045B1 (en) * 2000-09-20 2004-11-02 Kla-Tencor, Inc. Methods and systems for determining a characteristic of a specimen prior to, during, or subsequent to ion implantation
US6694284B1 (en) * 2000-09-20 2004-02-17 Kla-Tencor Technologies Corp. Methods and systems for determining at least four properties of a specimen
US20030002043A1 (en) 2001-04-10 2003-01-02 Kla-Tencor Corporation Periodic patterns and technique to control misalignment
US6716646B1 (en) 2001-07-16 2004-04-06 Advanced Micro Devices, Inc. Method and apparatus for performing overlay measurements using scatterometry
WO2003054475A2 (en) 2001-12-19 2003-07-03 Kla-Tencor Technologies Corporation Parametric profiling using optical spectroscopic systems
US6879051B1 (en) 2002-01-16 2005-04-12 Advanced Micro Devices, Inc. Systems and methods to determine seed layer thickness of trench sidewalls
US6778275B2 (en) 2002-02-20 2004-08-17 Micron Technology, Inc. Aberration mark and method for estimating overlay error and optical aberrations
US6992764B1 (en) 2002-09-30 2006-01-31 Nanometrics Incorporated Measuring an alignment target with a single polarization state
US6912438B2 (en) * 2002-10-21 2005-06-28 Advanced Micro Devices, Inc. Using scatterometry to obtain measurements of in circuit structures
US7080330B1 (en) * 2003-03-05 2006-07-18 Advanced Micro Devices, Inc. Concurrent measurement of critical dimension and overlay in semiconductor manufacturing
US6771028B1 (en) * 2003-04-30 2004-08-03 Eastman Kodak Company Drive circuitry for four-color organic light-emitting device
US7068363B2 (en) * 2003-06-06 2006-06-27 Kla-Tencor Technologies Corp. Systems for inspection of patterned or unpatterned wafers and other specimen
US7842933B2 (en) 2003-10-22 2010-11-30 Applied Materials Israel, Ltd. System and method for measuring overlay errors
US6937337B2 (en) 2003-11-19 2005-08-30 International Business Machines Corporation Overlay target and measurement method using reference and sub-grids
KR20050098631A (ko) * 2004-04-08 2005-10-12 삼성전자주식회사 액정 표시 장치 및 그에 사용되는 표시판
US7321426B1 (en) 2004-06-02 2008-01-22 Kla-Tencor Technologies Corporation Optical metrology on patterned samples
US7478019B2 (en) 2005-01-26 2009-01-13 Kla-Tencor Corporation Multiple tool and structure analysis
JP4585926B2 (ja) 2005-06-17 2010-11-24 株式会社日立ハイテクノロジーズ パターンレイヤーデータ生成装置、それを用いたパターンレイヤーデータ生成システム、半導体パターン表示装置、パターンレイヤーデータ生成方法、及びコンピュータプログラム
US7567351B2 (en) 2006-02-02 2009-07-28 Kla-Tencor Corporation High resolution monitoring of CD variations
JP4887062B2 (ja) 2006-03-14 2012-02-29 株式会社日立ハイテクノロジーズ 試料寸法測定方法、及び試料寸法測定装置
US20070239305A1 (en) 2006-03-28 2007-10-11 Haoren Zhuang Process control systems and methods
US7406153B2 (en) 2006-08-15 2008-07-29 Jordan Valley Semiconductors Ltd. Control of X-ray beam spot size
US7873585B2 (en) 2007-08-31 2011-01-18 Kla-Tencor Technologies Corporation Apparatus and methods for predicting a semiconductor parameter across an area of a wafer
US8313663B2 (en) 2008-09-24 2012-11-20 Tel Epion Inc. Surface profile adjustment using gas cluster ion beam processing
US7929667B1 (en) 2008-10-02 2011-04-19 Kla-Tencor Corporation High brightness X-ray metrology
US8068662B2 (en) 2009-03-30 2011-11-29 Hermes Microvision, Inc. Method and system for determining a defect during charged particle beam inspection of a sample
JP5764380B2 (ja) 2010-04-29 2015-08-19 エフ イー アイ カンパニＦｅｉ Ｃｏｍｐａｎｙ Ｓｅｍ画像化法
US9046475B2 (en) 2011-05-19 2015-06-02 Applied Materials Israel, Ltd. High electron energy based overlay error measurement methods and systems
CN102810492B (zh) * 2011-06-03 2015-08-05 中国科学院微电子研究所 金属栅cmp后的制程监控方法
US10107621B2 (en) 2012-02-15 2018-10-23 Nanometrics Incorporated Image based overlay measurement with finite gratings
US10801975B2 (en) 2012-05-08 2020-10-13 Kla-Tencor Corporation Metrology tool with combined X-ray and optical scatterometers
US10013518B2 (en) 2012-07-10 2018-07-03 Kla-Tencor Corporation Model building and analysis engine for combined X-ray and optical metrology
WO2014062972A1 (en) 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
US9581430B2 (en) 2012-10-19 2017-02-28 Kla-Tencor Corporation Phase characterization of targets
US10769320B2 (en) 2012-12-18 2020-09-08 Kla-Tencor Corporation Integrated use of model-based metrology and a process model
US9291554B2 (en) 2013-02-05 2016-03-22 Kla-Tencor Corporation Method of electromagnetic modeling of finite structures and finite illumination for metrology and inspection
US10101670B2 (en) 2013-03-27 2018-10-16 Kla-Tencor Corporation Statistical model-based metrology
EP2848924B1 (de) * 2013-09-11 2016-08-24 Anton Paar GmbH Temperierkammer für kompaktes Röntgengerät
US9846132B2 (en) 2013-10-21 2017-12-19 Kla-Tencor Corporation Small-angle scattering X-ray metrology systems and methods
US9885962B2 (en) 2013-10-28 2018-02-06 Kla-Tencor Corporation Methods and apparatus for measuring semiconductor device overlay using X-ray metrology
US9490182B2 (en) * 2013-12-23 2016-11-08 Kla-Tencor Corporation Measurement of multiple patterning parameters
US9494535B2 (en) 2014-04-21 2016-11-15 Kla-Tencor Corporation Scatterometry-based imaging and critical dimension metrology
US10215559B2 (en) 2014-10-16 2019-02-26 Kla-Tencor Corporation Metrology of multiple patterning processes
US10545104B2 (en) 2015-04-28 2020-01-28 Kla-Tencor Corporation Computationally efficient X-ray based overlay measurement
US10352695B2 (en) 2015-12-11 2019-07-16 Kla-Tencor Corporation X-ray scatterometry metrology for high aspect ratio structures
US10775323B2 (en) 2016-10-18 2020-09-15 Kla-Tencor Corporation Full beam metrology for X-ray scatterometry systems
US10727142B2 (en) * 2017-05-30 2020-07-28 Kla-Tencor Corporation Process monitoring of deep structures with X-ray scatterometry

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007285923A (ja) 2006-04-18 2007-11-01 Jordan Valley Semiconductors Ltd 反射モードのｘ線回折を用いた限界寸法の測定
US20150204802A1 (en) 2014-01-23 2015-07-23 Heath A. Pois Methods and systems for measuring periodic structures using multi-angle x-ray reflectance scatterometry (xrs)
US20160202193A1 (en) * 2015-01-14 2016-07-14 Kla-Tencor Corporation Measurement System Optimization For X-Ray Based Metrology

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