KR102549985B1 - 성막 장치, 기판 흡착 방법, 및 전자 디바이스의 제조 방법 - Google Patents

성막 장치, 기판 흡착 방법, 및 전자 디바이스의 제조 방법 Download PDF

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Publication number
KR102549985B1
KR102549985B1 KR1020210128031A KR20210128031A KR102549985B1 KR 102549985 B1 KR102549985 B1 KR 102549985B1 KR 1020210128031 A KR1020210128031 A KR 1020210128031A KR 20210128031 A KR20210128031 A KR 20210128031A KR 102549985 B1 KR102549985 B1 KR 102549985B1
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KR
South Korea
Prior art keywords
substrate
mask
suction plate
plate
unit
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KR1020210128031A
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English (en)
Korean (ko)
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KR20220044132A (ko
Inventor
히로시 이시이
토시유키 우에다
나오지로 오카모토
타쿠로 카라사와
Original Assignee
캐논 톡키 가부시키가이샤
가부시키가이샤 소딕
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Publication of KR20220044132A publication Critical patent/KR20220044132A/ko
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Publication of KR102549985B1 publication Critical patent/KR102549985B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/548—Controlling the composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020210128031A 2020-09-30 2021-09-28 성막 장치, 기판 흡착 방법, 및 전자 디바이스의 제조 방법 KR102549985B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2020-166056 2020-09-30
JP2020166056A JP7299202B2 (ja) 2020-09-30 2020-09-30 成膜装置、基板吸着方法、及び電子デバイスの製造方法

Publications (2)

Publication Number Publication Date
KR20220044132A KR20220044132A (ko) 2022-04-06
KR102549985B1 true KR102549985B1 (ko) 2023-06-29

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KR1020210128031A KR102549985B1 (ko) 2020-09-30 2021-09-28 성막 장치, 기판 흡착 방법, 및 전자 디바이스의 제조 방법

Country Status (3)

Country Link
JP (1) JP7299202B2 (ja)
KR (1) KR102549985B1 (ja)
CN (1) CN114318220B (ja)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006005318A (ja) * 2004-06-21 2006-01-05 Nikon Corp 基板搬送装置および露光装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101488668B1 (ko) * 2009-12-28 2015-02-02 울박, 인크 성막 장치 및 성막 방법
CN107002224B (zh) * 2014-11-17 2019-07-02 夏普株式会社 蒸镀装置、蒸镀方法及有机电致发光元件的制造方法
CN106840080B (zh) * 2017-01-22 2019-05-10 苏州菱麦自动化设备科技有限公司 空间三点平面校准机械手以及重置自查方法以及校准方法
CN107653434B (zh) * 2017-09-21 2019-04-26 京东方科技集团股份有限公司 一种掩模板挠度检测装置、调节装置及检测和调节方法
KR101993532B1 (ko) * 2017-11-29 2019-06-26 캐논 톡키 가부시키가이샤 성막장치, 성막방법, 및 전자 디바이스 제조방법
KR102010158B1 (ko) * 2017-12-26 2019-08-12 캐논 톡키 가부시키가이샤 성막장치, 성막방법 및 이를 사용한 유기 el 표시 장치의 제조방법
KR102014610B1 (ko) * 2017-12-27 2019-08-26 캐논 톡키 가부시키가이샤 정전척, 성막 장치, 기판 흡착/박리 방법, 성막 방법, 및 전자 디바이스의 제조 방법
KR20190117926A (ko) 2018-04-09 2019-10-17 한국조선해양 주식회사 선박
KR20200049034A (ko) * 2018-10-31 2020-05-08 캐논 톡키 가부시키가이샤 얼라인먼트 시스템, 성막 장치, 얼라인먼트 방법, 성막 방법 및 전자 디바이스의 제조 방법
JP7249142B2 (ja) * 2018-12-14 2023-03-30 キヤノントッキ株式会社 搬送キャリア、蒸着装置、および電子デバイスの製造装置
CN111141936A (zh) * 2020-02-14 2020-05-12 深圳金三立视频科技股份有限公司 一种可自适应角度调节装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006005318A (ja) * 2004-06-21 2006-01-05 Nikon Corp 基板搬送装置および露光装置

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JP2022057674A (ja) 2022-04-11
JP7299202B2 (ja) 2023-06-27
CN114318220B (zh) 2023-09-26
KR20220044132A (ko) 2022-04-06
CN114318220A (zh) 2022-04-12

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