KR102541208B1 - 탄소나노튜브를 만들고 정제하는 방법들 - Google Patents

탄소나노튜브를 만들고 정제하는 방법들 Download PDF

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KR102541208B1
KR102541208B1 KR1020150187806A KR20150187806A KR102541208B1 KR 102541208 B1 KR102541208 B1 KR 102541208B1 KR 1020150187806 A KR1020150187806 A KR 1020150187806A KR 20150187806 A KR20150187806 A KR 20150187806A KR 102541208 B1 KR102541208 B1 KR 102541208B1
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carbon nanotubes
nanotube
wavelength
seeds
carbon
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KR20160094843A (ko
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디. 험펠드 케이스
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더 보잉 컴파니
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    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/168—After-treatment
    • C01B32/172—Sorting
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    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/65—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing carbon
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    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
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    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
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    • C—CHEMISTRY; METALLURGY
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    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/168—After-treatment
    • C01B32/17—Purification
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
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    • C01B2202/00—Structure or properties of carbon nanotubes
    • C01B2202/02—Single-walled nanotubes
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    • C01B2202/00—Structure or properties of carbon nanotubes
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    • C01B2202/00—Structure or properties of carbon nanotubes
    • C01B2202/20—Nanotubes characterized by their properties
    • C01B2202/22—Electronic properties
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    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742—Carbon nanotubes, CNTs
    • Y10S977/75—Single-walled
    • Y10S977/751—Single-walled with specified chirality and/or electrical conductivity
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
    • Y10S977/845—Purification or separation of fullerenes or nanotubes

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
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  • General Health & Medical Sciences (AREA)
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  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020150187806A 2015-02-02 2015-12-28 탄소나노튜브를 만들고 정제하는 방법들 Active KR102541208B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/611,734 US9688537B2 (en) 2015-02-02 2015-02-02 Methods of making and purifying carbon nanotubes
US14/611,734 2015-02-02

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KR20160094843A KR20160094843A (ko) 2016-08-10
KR102541208B1 true KR102541208B1 (ko) 2023-06-07

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US (2) US9688537B2 (https=)
JP (1) JP6650771B2 (https=)
KR (1) KR102541208B1 (https=)
CN (2) CN109205593B (https=)

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Publication number Priority date Publication date Assignee Title
US10227719B2 (en) 2016-03-31 2019-03-12 The Boeing Company Interwoven carbon nanotube mats
CN108878652A (zh) * 2017-05-15 2018-11-23 松下知识产权经营株式会社 光电转换器件的制造方法
US10633253B1 (en) * 2018-11-14 2020-04-28 Aligned Carbon, Inc. Method for carbon nanotube purification
GB201917638D0 (en) * 2019-12-03 2020-01-15 Cambridge Entpr Ltd Method
CN112234421B (zh) * 2020-09-30 2021-12-28 山东科技大学 单手性单壁碳纳米管饱和吸收的红光脉冲固体激光器及工作方法

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JP2005074557A (ja) * 2003-08-29 2005-03-24 Japan Science & Technology Agency ナノスケール物質の構造制御方法
WO2006025393A1 (ja) * 2004-08-31 2006-03-09 Japan Science And Technology Agency ナノスケールの低次元量子構造体の製造方法、及び、当該製造方法を用いた集積回路の製造方法
WO2006121155A1 (ja) * 2005-05-12 2006-11-16 Japan Science And Technology Agency カーボンナノチューブ組成物及びその製造方法、アレイ、電子デバイス
JP4899368B2 (ja) * 2005-07-29 2012-03-21 ソニー株式会社 金属的単層カーボンナノチューブの破壊方法、半導体的単層カーボンナノチューブ集合体の製造方法、半導体的単層カーボンナノチューブ薄膜の製造方法、半導体的単層カーボンナノチューブの破壊方法、金属的単層カーボンナノチューブ集合体の製造方法、金属的単層カーボンナノチューブ薄膜の製造方法、電子素子の製造方法およびカーボンナノチューブｆｅｔの製造方法
CN100569637C (zh) * 2007-11-30 2009-12-16 北京大学 一种制备半导体性单壁碳纳米管的方法
US20100226847A1 (en) * 2009-03-05 2010-09-09 Cfd Research Corporation Method for direct, chirality-selective synthesis of semiconducting or metallic single-walled carbon nanotubes
JP2010275168A (ja) * 2009-06-01 2010-12-09 Nihon Univ カーボンナノチューブのカイラリティ制御

Non-Patent Citations (3)

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Title
Japan. J. Appl. Phys., Vol.51, p.105101 (2012)
Satoru Shoji et al., Proc. of SPIE, Vol. 8245, 82450C-1 (2012)
Timothy McDonald et al., 2006 Meet. Abstr., MA2005-01 891 (2006)*

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Publication number Publication date
CN109205593B (zh) 2022-04-12
US9868638B2 (en) 2018-01-16
JP2016185900A (ja) 2016-10-27
JP6650771B2 (ja) 2020-02-19
CN109205593A (zh) 2019-01-15
US20160221829A1 (en) 2016-08-04
KR20160094843A (ko) 2016-08-10
US9688537B2 (en) 2017-06-27
CN105836726A (zh) 2016-08-10
CN105836726B (zh) 2018-11-13
US20170260053A1 (en) 2017-09-14

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