CN109205593B - 制造和纯化碳纳米管的方法 - Google Patents

制造和纯化碳纳米管的方法 Download PDF

Info

Publication number
CN109205593B
CN109205593B CN201811182278.XA CN201811182278A CN109205593B CN 109205593 B CN109205593 B CN 109205593B CN 201811182278 A CN201811182278 A CN 201811182278A CN 109205593 B CN109205593 B CN 109205593B
Authority
CN
China
Prior art keywords
carbon nanotubes
nanotube
nanotubes
wavelength
carbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201811182278.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN109205593A (zh
Inventor
K·D·洪菲尔德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing Co
Original Assignee
Boeing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boeing Co filed Critical Boeing Co
Publication of CN109205593A publication Critical patent/CN109205593A/zh
Application granted granted Critical
Publication of CN109205593B publication Critical patent/CN109205593B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/65—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing carbon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/168—After-treatment
    • C01B32/172—Sorting
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/168—After-treatment
    • C01B32/17—Purification
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/159—Carbon nanotubes single-walled
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2202/00—Structure or properties of carbon nanotubes
    • C01B2202/02—Single-walled nanotubes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2202/00—Structure or properties of carbon nanotubes
    • C01B2202/20—Nanotubes characterized by their properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742—Carbon nanotubes, CNTs
    • Y10S977/75—Single-walled
    • Y10S977/751—Single-walled with specified chirality and/or electrical conductivity
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
    • Y10S977/845—Purification or separation of fullerenes or nanotubes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201811182278.XA 2015-02-02 2016-01-22 制造和纯化碳纳米管的方法 Expired - Fee Related CN109205593B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/611,734 US9688537B2 (en) 2015-02-02 2015-02-02 Methods of making and purifying carbon nanotubes
US14/611,734 2015-02-02
CN201610041198.7A CN105836726B (zh) 2015-02-02 2016-01-22 制造和纯化碳纳米管的方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201610041198.7A Division CN105836726B (zh) 2015-02-02 2016-01-22 制造和纯化碳纳米管的方法

Publications (2)

Publication Number Publication Date
CN109205593A CN109205593A (zh) 2019-01-15
CN109205593B true CN109205593B (zh) 2022-04-12

Family

ID=56552808

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201811182278.XA Expired - Fee Related CN109205593B (zh) 2015-02-02 2016-01-22 制造和纯化碳纳米管的方法
CN201610041198.7A Expired - Fee Related CN105836726B (zh) 2015-02-02 2016-01-22 制造和纯化碳纳米管的方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201610041198.7A Expired - Fee Related CN105836726B (zh) 2015-02-02 2016-01-22 制造和纯化碳纳米管的方法

Country Status (4)

Country Link
US (2) US9688537B2 (https=)
JP (1) JP6650771B2 (https=)
KR (1) KR102541208B1 (https=)
CN (2) CN109205593B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10227719B2 (en) 2016-03-31 2019-03-12 The Boeing Company Interwoven carbon nanotube mats
CN108878652A (zh) * 2017-05-15 2018-11-23 松下知识产权经营株式会社 光电转换器件的制造方法
US10633253B1 (en) * 2018-11-14 2020-04-28 Aligned Carbon, Inc. Method for carbon nanotube purification
GB201917638D0 (en) * 2019-12-03 2020-01-15 Cambridge Entpr Ltd Method
CN112234421B (zh) * 2020-09-30 2021-12-28 山东科技大学 单手性单壁碳纳米管饱和吸收的红光脉冲固体激光器及工作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005074557A (ja) * 2003-08-29 2005-03-24 Japan Science & Technology Agency ナノスケール物質の構造制御方法
CN101200291A (zh) * 2007-11-30 2008-06-18 北京大学 一种制备半导体性单壁碳纳米管的方法
JP2010275168A (ja) * 2009-06-01 2010-12-09 Nihon Univ カーボンナノチューブのカイラリティ制御

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006025393A1 (ja) * 2004-08-31 2006-03-09 Japan Science And Technology Agency ナノスケールの低次元量子構造体の製造方法、及び、当該製造方法を用いた集積回路の製造方法
WO2006121155A1 (ja) * 2005-05-12 2006-11-16 Japan Science And Technology Agency カーボンナノチューブ組成物及びその製造方法、アレイ、電子デバイス
JP4899368B2 (ja) * 2005-07-29 2012-03-21 ソニー株式会社 金属的単層カーボンナノチューブの破壊方法、半導体的単層カーボンナノチューブ集合体の製造方法、半導体的単層カーボンナノチューブ薄膜の製造方法、半導体的単層カーボンナノチューブの破壊方法、金属的単層カーボンナノチューブ集合体の製造方法、金属的単層カーボンナノチューブ薄膜の製造方法、電子素子の製造方法およびカーボンナノチューブｆｅｔの製造方法
US20100226847A1 (en) * 2009-03-05 2010-09-09 Cfd Research Corporation Method for direct, chirality-selective synthesis of semiconducting or metallic single-walled carbon nanotubes

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005074557A (ja) * 2003-08-29 2005-03-24 Japan Science & Technology Agency ナノスケール物質の構造制御方法
CN101200291A (zh) * 2007-11-30 2008-06-18 北京大学 一种制备半导体性单壁碳纳米管的方法
JP2010275168A (ja) * 2009-06-01 2010-12-09 Nihon Univ カーボンナノチューブのカイラリティ制御

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Laser irradiation for purification of aligned carbon nanotube films;Xiaodong Bai et al.;《Carbon》;20040512;第42卷(第10期);第2126-2127页 *

Also Published As

Publication number Publication date
US9868638B2 (en) 2018-01-16
JP2016185900A (ja) 2016-10-27
JP6650771B2 (ja) 2020-02-19
KR102541208B1 (ko) 2023-06-07
CN109205593A (zh) 2019-01-15
US20160221829A1 (en) 2016-08-04
KR20160094843A (ko) 2016-08-10
US9688537B2 (en) 2017-06-27
CN105836726A (zh) 2016-08-10
CN105836726B (zh) 2018-11-13
US20170260053A1 (en) 2017-09-14

Similar Documents

Publication Publication Date Title
Liu et al. Chirality-controlled synthesis and applications of single-wall carbon nanotubes
Alvarez et al. Characterization of single-walled carbon nanotubes (SWNTs) produced by CO disproportionation on Co− Mo catalysts
Shen et al. Double-walled carbon nanotubes: challenges and opportunities
CN109205593B (zh) 制造和纯化碳纳米管的方法
Ando et al. Growing carbon nanotubes
Prasek et al. Methods for carbon nanotubes synthesis
Lu et al. Controlling the diameter of carbon nanotubes in chemical vapor deposition method by carbon feeding
Wang et al. Continued growth of single-walled carbon nanotubes
Li et al. Growth of high-density-aligned and semiconducting-enriched single-walled carbon nanotubes: decoupling the conflict between density and selectivity
Liu et al. Chirality-dependent vapor-phase epitaxial growth and termination of single-wall carbon nanotubes
Liu et al. Nearly exclusive growth of small diameter semiconducting single-wall carbon nanotubes from organic chemistry synthetic end-cap molecules
Lin et al. Microwave makes carbon nanotubes less defective
JP4899368B2 (ja) 金属的単層カーボンナノチューブの破壊方法、半導体的単層カーボンナノチューブ集合体の製造方法、半導体的単層カーボンナノチューブ薄膜の製造方法、半導体的単層カーボンナノチューブの破壊方法、金属的単層カーボンナノチューブ集合体の製造方法、金属的単層カーボンナノチューブ薄膜の製造方法、電子素子の製造方法およびカーボンナノチューブｆｅｔの製造方法
Toma et al. Bulk synthesis of linear carbon chains confined inside single‐wall carbon nanotubes by vacuum discharge
Ibrahim et al. Current progress in the chemical vapor deposition of type-selected horizontally aligned single-walled carbon nanotubes
Li et al. Preparation of metallic single-wall carbon nanotubes
Jung et al. Improved crystallinity of double-walled carbon nanotubes after a high-temperature thermal annealing and their enhanced field emission properties
Otsuka et al. Universal map of gas-dependent kinetic selectivity in carbon nanotube growth
Nishihara et al. Statistical verification of anomaly in chiral angle distribution of air-suspended carbon nanotubes
Zhang et al. Evolution of catalyst design for controlled synthesis of chiral single-walled carbon nanotubes
Ismagilov et al. Growth of a carbon nanotube forest on silicon using remote plasma CVD
JPWO2018043634A1 (ja) 自己触媒能を有する炭素系水素貯蔵材料、その製造方法、その化合物を用いる水素の吸蔵方法及び水素の放出方法、及び水素吸蔵用デバイス
KR101494670B1 (ko) 금속성 탄소 나노 튜브 선택적 제거 방법, 이를 이용한반도체성 탄소 나노 튜브 제조 방법 및 반도체성 탄소 나노튜브
Zhang et al. Structural changes in double-walled carbon nanotube strands induced by ultraviolet laser irradiation
JP2011098876A (ja) 半導体性のカーボンナノチューブの濃縮方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20220412

CF01 Termination of patent right due to non-payment of annual fee