KR102529649B1 - 검사 장치 및 검사 방법 - Google Patents

검사 장치 및 검사 방법 Download PDF

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Publication number
KR102529649B1
KR102529649B1 KR1020190175383A KR20190175383A KR102529649B1 KR 102529649 B1 KR102529649 B1 KR 102529649B1 KR 1020190175383 A KR1020190175383 A KR 1020190175383A KR 20190175383 A KR20190175383 A KR 20190175383A KR 102529649 B1 KR102529649 B1 KR 102529649B1
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KR
South Korea
Prior art keywords
light emitting
semiconductor light
electrode
emitting elements
plate
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KR1020190175383A
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English (en)
Korean (ko)
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KR20200083298A (ko
Inventor
미치야 요코타
료우이치 이나바
Original Assignee
신에츠 엔지니어링 가부시키가이샤
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Publication of KR20200083298A publication Critical patent/KR20200083298A/ko
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Publication of KR102529649B1 publication Critical patent/KR102529649B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Led Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Transplanting Machines (AREA)
KR1020190175383A 2018-12-28 2019-12-26 검사 장치 및 검사 방법 KR102529649B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2018-248085 2018-12-28
JP2018248085 2018-12-28
JPJP-P-2019-176953 2019-09-27
JP2019176953A JP6650547B1 (ja) 2018-12-28 2019-09-27 検査装置及び検査方法

Publications (2)

Publication Number Publication Date
KR20200083298A KR20200083298A (ko) 2020-07-08
KR102529649B1 true KR102529649B1 (ko) 2023-05-04

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Application Number Title Priority Date Filing Date
KR1020190175383A KR102529649B1 (ko) 2018-12-28 2019-12-26 검사 장치 및 검사 방법

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JP (1) JP6650547B1 (ja)
KR (1) KR102529649B1 (ja)
TW (1) TWI795618B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024053198A1 (ja) * 2022-09-06 2024-03-14 株式会社ジャパンディスプレイ 発光素子の検査方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017504956A (ja) 2013-11-21 2017-02-09 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス半導体材料の光学的特性を検出する方法および該方法を実施する装置
US20180374829A1 (en) 2017-06-26 2018-12-27 Tesoro Scientific, Inc. Light emitting diode (led) mass-transfer apparatus and method of manufacture

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101067142B1 (ko) * 2009-08-31 2011-09-22 삼성전기주식회사 선택적 피드백용 발광 다이오드 전류 제어모듈, 이를 사용하는 발광 다이오드 구동장치 및 구동방법
JP2011095116A (ja) * 2009-10-30 2011-05-12 Nec Saitama Ltd 点灯検査装置、方法、及び、プログラム
US10177016B2 (en) * 2015-08-18 2019-01-08 Goertek Inc. Pre-screening method, manufacturing method, device and electronic apparatus of micro-LED
EP3262694B1 (en) * 2015-10-20 2019-08-21 Goertek. Inc Method for transferring micro-leds and method for manufacturing micro-led device
TWI744221B (zh) * 2015-12-04 2021-11-01 晶元光電股份有限公司 發光裝置
WO2018112267A1 (en) 2016-12-16 2018-06-21 Tesoro Scientific, Inc. Light emitting diode (led) test apparatus and method of manufacture
KR20190112294A (ko) * 2017-01-23 2019-10-04 테소로 사이언티픽, 인코포레이티드 발광 다이오드 테스트 장치 및 제조 방법
TWI759289B (zh) * 2017-03-21 2022-04-01 晶元光電股份有限公司 發光元件

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017504956A (ja) 2013-11-21 2017-02-09 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス半導体材料の光学的特性を検出する方法および該方法を実施する装置
US20180374829A1 (en) 2017-06-26 2018-12-27 Tesoro Scientific, Inc. Light emitting diode (led) mass-transfer apparatus and method of manufacture

Also Published As

Publication number Publication date
TWI795618B (zh) 2023-03-11
JP2020109392A (ja) 2020-07-16
TW202043753A (zh) 2020-12-01
KR20200083298A (ko) 2020-07-08
JP6650547B1 (ja) 2020-02-19

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