KR102513717B1 - 픽셀 레벨 이미지 정량화를 위한 딥 러닝 기반 결함 검출 및 분류 스킴의 사용 - Google Patents

픽셀 레벨 이미지 정량화를 위한 딥 러닝 기반 결함 검출 및 분류 스킴의 사용 Download PDF

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KR102513717B1
KR102513717B1 KR1020217018222A KR20217018222A KR102513717B1 KR 102513717 B1 KR102513717 B1 KR 102513717B1 KR 1020217018222 A KR1020217018222 A KR 1020217018222A KR 20217018222 A KR20217018222 A KR 20217018222A KR 102513717 B1 KR102513717 B1 KR 102513717B1
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image
processor
defect
wafer
pixels
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KR20210080567A (ko
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하리 파싼지
시바프라사스 미낙시순다람
타나이 반살
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케이엘에이 코포레이션
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9505—Wafer internal defects, e.g. microcracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/222—Image processing arrangements associated with the tube
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/10—Segmentation; Edge detection
    • G06T7/11—Region-based segmentation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/20—Special algorithmic details
    • G06T2207/20081—Training; Learning
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/20—Special algorithmic details
    • G06T2207/20084—Artificial neural networks [ANN]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H01J2237/221—Image processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2448—Secondary particle detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2803—Scanning microscopes characterised by the imaging method
    • H01J2237/2806—Secondary charged particle
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2809—Scanning microscopes characterised by the imaging problems involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Quality & Reliability (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Image Processing (AREA)
  • Image Analysis (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020217018222A 2018-11-15 2019-11-15 픽셀 레벨 이미지 정량화를 위한 딥 러닝 기반 결함 검출 및 분류 스킴의 사용 Active KR102513717B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
IN201841042919 2018-11-15
IN201841042919 2018-11-15
US16/249,337 US10672588B1 (en) 2018-11-15 2019-01-16 Using deep learning based defect detection and classification schemes for pixel level image quantification
US16/249,337 2019-01-16
PCT/US2019/061578 WO2020102611A1 (en) 2018-11-15 2019-11-15 Using deep learning based defect detection and classification schemes for pixel level image quantification

Publications (2)

Publication Number Publication Date
KR20210080567A KR20210080567A (ko) 2021-06-30
KR102513717B1 true KR102513717B1 (ko) 2023-03-23

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US (1) US10672588B1 (https=)
EP (1) EP3870959A4 (https=)
JP (1) JP7216822B2 (https=)
KR (1) KR102513717B1 (https=)
CN (1) CN112969911B (https=)
TW (1) TWI805868B (https=)
WO (1) WO2020102611A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102693776B1 (ko) 2023-11-14 2024-08-09 주식회사 파이비스 딥러닝 모델을 기반으로 오브젝트의 결함을 검출하기 위한 장치 및 방법

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10546160B2 (en) 2018-01-05 2020-01-28 Datamax-O'neil Corporation Methods, apparatuses, and systems for providing print quality feedback and controlling print quality of machine-readable indicia
US10803264B2 (en) 2018-01-05 2020-10-13 Datamax-O'neil Corporation Method, apparatus, and system for characterizing an optical system
US10834283B2 (en) 2018-01-05 2020-11-10 Datamax-O'neil Corporation Methods, apparatuses, and systems for detecting printing defects and contaminated components of a printer
US10795618B2 (en) 2018-01-05 2020-10-06 Datamax-O'neil Corporation Methods, apparatuses, and systems for verifying printed image and improving print quality
US11501424B2 (en) * 2019-11-18 2022-11-15 Stmicroelectronics (Rousset) Sas Neural network training device, system and method
US11200659B2 (en) 2019-11-18 2021-12-14 Stmicroelectronics (Rousset) Sas Neural network training device, system and method
US11449711B2 (en) * 2020-01-02 2022-09-20 Applied Materials Isreal Ltd. Machine learning-based defect detection of a specimen
US11651981B2 (en) * 2020-08-18 2023-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for map-free inspection of semiconductor devices
US20220101114A1 (en) * 2020-09-27 2022-03-31 Kla Corporation Interpretable deep learning-based defect detection and classification
KR20220127004A (ko) 2021-03-10 2022-09-19 삼성전자주식회사 확률론적 콘투어 예측 시스템 및 확률론적 콘투어 예측 시스템의 제공 방법 및 확률론적 콘투어 예측 시스템을 이용한 EUV(Extreme Ultra violet) 마스크의 제공 방법
WO2022207181A1 (en) * 2021-03-30 2022-10-06 Asml Netherlands B.V. Improved charged particle image inspection
CN112884769B (zh) * 2021-04-12 2021-09-28 深圳中科飞测科技股份有限公司 图像处理方法、装置、光学系统和计算机可读存储介质
US20220335288A1 (en) * 2021-04-16 2022-10-20 Micron Technology, Inc. Systems, apparatuses and methods for detecting and classifying patterns of heatmaps
FR3125156B1 (fr) * 2021-07-12 2023-11-10 Safran Controle non destructif d’une piece
JP7034529B1 (ja) * 2021-08-13 2022-03-14 株式会社ハシマ 学習モデルの生成方法、学習モデル、検査装置、検査方法およびコンピュータプログラム
KR20230029409A (ko) * 2021-08-24 2023-03-03 삼성전자주식회사 반도체 장치의 제조를 위한 방법, 전자 장치 및 전자 장치의 동작 방법
EP4148499A1 (en) * 2021-09-09 2023-03-15 ASML Netherlands B.V. Patterning device defect detection systems and methods
CN113935982B (zh) * 2021-10-27 2024-06-14 征图新视(江苏)科技股份有限公司 基于深度学习的印刷质量检测分析系统
CN115222658B (zh) * 2022-06-01 2025-12-02 湖南长步道光学科技有限公司 一种多工位并行镜片缺陷检测方法和装置
CN115965574B (zh) * 2022-08-31 2025-03-14 东方晶源微电子科技(北京)股份有限公司 基于设计版图的扫描电子显微镜图像缺陷检测方法、装置
US12136225B2 (en) * 2022-09-09 2024-11-05 Applied Materials, Inc. Clog detection via image analytics
US20240169514A1 (en) * 2022-11-21 2024-05-23 Onto Innovation Inc. Defect detection in manufactured articles using multi-channel images
TWI839046B (zh) * 2022-12-26 2024-04-11 華邦電子股份有限公司 膜層中的縫隙的檢測方法
CN116993669B (zh) * 2023-06-29 2024-11-08 东方晶源微电子科技(上海)有限公司 扫描电镜图像缺陷的确定方法及装置
CN116840238A (zh) * 2023-07-04 2023-10-03 杭州中为光电技术有限公司 一种硅棒检测设备、检测方法及切割方法
US12561791B2 (en) * 2023-09-26 2026-02-24 Kla Corporation Method to calibrate, predict, and control stochastic defects in EUV lithography
CN120411120B (zh) * 2025-07-07 2025-08-29 中科方寸知微(南京)科技有限公司 一种基于深度学习图像分割算法的输电图像缺陷检测及缺陷去重的方法及系统

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030023404A1 (en) 2000-11-22 2003-01-30 Osama Moselhi Method and apparatus for the automated detection and classification of defects in sewer pipes

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6292582B1 (en) 1996-05-31 2001-09-18 Lin Youling Method and system for identifying defects in a semiconductor
US6067376A (en) 1998-01-16 2000-05-23 Cognex Corporation Classifying pixels of an image
JP3749090B2 (ja) * 2000-07-06 2006-02-22 大日本スクリーン製造株式会社 パターン検査装置
US7109483B2 (en) * 2000-11-17 2006-09-19 Ebara Corporation Method for inspecting substrate, substrate inspecting system and electron beam apparatus
US7162071B2 (en) 2002-12-20 2007-01-09 Taiwan Semiconductor Manufacturing Co., Ltd. Progressive self-learning defect review and classification method
TWI370501B (en) 2003-11-10 2012-08-11 Hermes Microvision Inc Method and system for monitoring ic process
JP2006098152A (ja) 2004-09-29 2006-04-13 Dainippon Screen Mfg Co Ltd 欠陥検出装置および欠陥検出方法
JP2012217139A (ja) * 2011-03-30 2012-11-08 Sony Corp 画像理装置および方法、並びにプログラム
JP5707291B2 (ja) * 2011-09-29 2015-04-30 株式会社日立ハイテクノロジーズ 画像分類支援を行う荷電粒子線装置
US10186026B2 (en) * 2015-11-17 2019-01-22 Kla-Tencor Corp. Single image detection
TWI797699B (zh) 2015-12-22 2023-04-01 以色列商應用材料以色列公司 半導體試樣的基於深度學習之檢查的方法及其系統
US10181185B2 (en) 2016-01-11 2019-01-15 Kla-Tencor Corp. Image based specimen process control
US10223615B2 (en) * 2016-08-23 2019-03-05 Dongfang Jingyuan Electron Limited Learning based defect classification
US11580398B2 (en) * 2016-10-14 2023-02-14 KLA-Tenor Corp. Diagnostic systems and methods for deep learning models configured for semiconductor applications
US10031997B1 (en) * 2016-11-29 2018-07-24 Taiwan Semiconductor Manufacturing Co., Ltd. Forecasting wafer defects using frequency domain analysis
US10395362B2 (en) * 2017-04-07 2019-08-27 Kla-Tencor Corp. Contour based defect detection

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030023404A1 (en) 2000-11-22 2003-01-30 Osama Moselhi Method and apparatus for the automated detection and classification of defects in sewer pipes

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102693776B1 (ko) 2023-11-14 2024-08-09 주식회사 파이비스 딥러닝 모델을 기반으로 오브젝트의 결함을 검출하기 위한 장치 및 방법
KR20250071153A (ko) 2023-11-14 2025-05-21 주식회사 파이비스 검출 강도에 따른 오브젝트 결함 검출 시스템

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TWI805868B (zh) 2023-06-21
KR20210080567A (ko) 2021-06-30
CN112969911A (zh) 2021-06-15
JP7216822B2 (ja) 2023-02-01
EP3870959A4 (en) 2022-07-27
EP3870959A1 (en) 2021-09-01
TW202033954A (zh) 2020-09-16
JP2022507543A (ja) 2022-01-18
WO2020102611A1 (en) 2020-05-22
US10672588B1 (en) 2020-06-02
CN112969911B (zh) 2022-09-06
US20200161081A1 (en) 2020-05-21

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