KR102510027B1 - Contact structure of sensor using silicon nanowire and manufacturing method thereof - Google Patents

Abstract

One embodiment of the present invention, a silicon substrate, at least one silicon nanowire formed on the silicon substrate, a contact portion connected to an end of the silicon nanowire and having a wider width than the silicon nanowire, and the contact portion It provides a contact structure of a sensor using a silicon nanowire including an electrode pattern for transmitting an electrical signal to the silicon nanowire and a manufacturing method thereof.

Description

Contact structure of sensor using silicon nanowire and manufacturing method thereof

The present invention relates to a contact structure of a sensor using silicon nanowires and a manufacturing method thereof.

With the development of nanotechnology, research on the use of nanowires with excellent electrical and mechanical properties in various fields is being conducted. Since the nanowire has a very small physical size, various methods for arranging the nanowire in an accurate position and aligning it in a specific direction are being studied.

In order to utilize nanowires as electrical materials, it is necessary to connect electrodes for input and output of electrical signals with external circuits to the nanowires. Conventionally, methods of forming nanowires and then forming metal electrodes on both ends of the nanowires or growing nanowires on a metal plate have been studied.

KR 10-2017-0078187 A

An object according to an embodiment of the present invention is to provide a structure for improving ohmic contact between silicon nanowires and metal electrodes.

In addition, a contact structure of a sensor using silicon nanowires in which a contact portion wider than the silicon nanowire is formed at the end of the silicon nanowire and a metal electrode pattern is coupled to the contact portion, and a manufacturing method thereof are provided.

The contact structure of a sensor using silicon nanowires according to an embodiment of the present invention is connected to a silicon substrate, at least one silicon nanowire formed on the silicon substrate, and an end of the silicon nanowire, It includes a wide contact portion and an electrode pattern connected to the contact portion and transmitting an electrical signal to the silicon nanowire.

In addition, the contact unit may be connected to both ends of the silicon nanowire one by one and integrally formed with the silicon nanowire.

In addition, silicide may be formed on a contact surface between the contact portion made of silicon and the electrode pattern made of metal to improve bonding between the contact portion and the electrode pattern.

A method for manufacturing a contact structure of a sensor using silicon nanowires according to an embodiment of the present invention includes a wire region having a first width on one surface of a silicon substrate and a second wire region connected to an end of the wire region and having a larger width than the first width. A mask forming step of forming at least one mask having a pattern having a contact region having a width, and performing an etching and oxidation process using the mask to form silicon nanowires on the silicon substrate and silicon nanowires at ends of the silicon nanowires. A nanowire forming step of forming a contact portion having a wider width, and an electrode pattern forming step of forming an electrode pattern of a metal material on the contact portion.

In addition, the nanowire forming step is a step of etching the silicon substrate to a certain depth using the mask to form a column structure having a constant height and the same plane as the mask, and anisotropically etching the column structure to cross-section in the width direction Forming a support structure having an hourglass shape, and wet oxidizing the column structure to form the silicon nanowire and the contact portion on top of the column structure may be included.

In the step of forming the support structure, the execution time of the wet oxidation process may be increased in proportion to the first width and the second width of the pattern.

Features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

Prior to this, the terms or words used in this specification and claims should not be interpreted in a conventional and dictionary sense, and the inventor may appropriately define the concept of the term in order to explain his or her invention in the best way. It should be interpreted as a meaning and concept consistent with the technical idea of the present invention based on the principle that there is.

According to one embodiment of the present invention, since the metal electrode pattern can be connected to the contact portion that is connected to the end of the silicon nanowire and has a wider width than the silicon nanowire, it is possible to connect the electrode pattern to the silicon nanowire rather than the case where the electrode pattern is directly connected to the silicon nanowire. The contact area is wide, so the ohmic contact is improved.

1 is a cross-sectional view showing a contact structure of a sensor using silicon nanowires according to an embodiment of the present invention.
2A is a perspective view illustrating a silicon nanowire and a contact unit according to an embodiment of the present invention.
Fig. 2b is a cross-sectional view taken along A-A' of Fig. 2a.
Fig. 2c is a sectional view taken along BB' of Fig. 2a.
3A to 10 are views showing each step of a method for manufacturing a contact structure of a sensor using silicon nanowires according to an embodiment of the present invention.

Objects, specific advantages and novel features of an embodiment of the present invention will become more apparent from the following detailed description and preferred embodiments taken in conjunction with the accompanying drawings. In adding reference numerals to components of each drawing in this specification, it should be noted that the same components have the same numbers as much as possible, even if they are displayed on different drawings. In addition, terms such as "one side", "other side", "first", and "second" are used to distinguish one component from another, and the components are not limited by the above terms. no. Hereinafter, in describing an embodiment of the present invention, a detailed description of related known technologies that may unnecessarily obscure the subject matter of an embodiment of the present invention will be omitted.

Hereinafter, with reference to the accompanying drawings, an embodiment of the present invention will be described in detail.

1 is a cross-sectional view showing a contact structure of a sensor using silicon nanowires 131 according to an embodiment of the present invention, and FIG. 2A is a silicon nanowire 131 and a contact unit 132 according to an embodiment of the present invention. ), Figure 2b is a cross-sectional view taken along A-A' of Figure 2a, Figure 2c is a cross-sectional view taken along BB' of FIG.

As shown in FIG. 1, the contact structure of a sensor using silicon nanowires 131 according to an embodiment of the present invention includes a silicon substrate 100 and at least one silicon nanowire formed on the silicon substrate 100. A wire 131, connected to an end of the silicon nanowire 131, and connected to a contact portion 132 having a wider width than the silicon nanowire 131, and connected to the contact portion 132, the silicon nanowire It includes an electrode pattern 160 that transmits an electrical signal to (131).

The silicon substrate 100 may be a single crystal silicon substrate 100 having a crystal orientation of <100>. The silicon nanowire 131 is doped with a P-type dopant and an N-type dopant to form a diode having a PN junction and an avalanche photodiode generating an avalanche current when a single photon is incident thereon. photodiode), etc. The dopant-doped silicon nanowire 131 may be used as a photodetection sensor.

As shown in FIG. 2A, a support structure 120 is formed on one surface of a silicon substrate 100, and a silicon nanowire 131 is formed on top of the support structure 120 and an end of the silicon nanowire 131 is connected. A contact portion 132 is formed. The silicon nanowires 131 are formed parallel to one surface of the silicon substrate 100 . As shown in FIGS. 2B and 2C , the silicon nanowires 131 and the contact portion 132 are insulated from the silicon substrate 100 by a silicon oxide film formed on the side surface and the middle portion of the support structure 120 . The silicon nanowire 131 may have an inverted triangular cross section, a uniform width, and a long wire shape in the longitudinal direction.

The contact units 132 are connected to both ends of the silicon nanowires 131 one by one and may be integrally formed with the silicon nanowires 131 . The contact portion 132 has a larger width than the silicon nanowire 131 . Re-expressing the silicon nanowire 131 and the contact portion 132, it can be said that the width of one part of the silicon nanowire 131 and the width of the other part are formed differently.

Since the width (F2) of the contact portion 132 is greater than the width (F1) of the silicon nanowire 131, the contact portion 132 has sufficient contact to achieve ohmic contact when the electrode pattern 160 made of metal is connected. provide area.

Compared to the case of directly forming the electrode pattern 160 made of metal on the silicon nanowire 131, the contact portion 132 wider than the silicon nanowire 131 is formed at the end of the silicon nanowire 131, By forming the electrode pattern 160 on the contact portion 132, there is an advantage in improving ohmic contact because the contact area between silicon and metal is wide. Therefore, the defect rate due to contact failure is lowered, and the yield of sensors using silicon nanowires is improved.

The width F1 of the silicon nanowire 131 and the width F2 of the contact portion 132 may be determined within a predetermined range of ratios. If the width F2 of the contact portion 132 is larger than the width F1 of the silicon nanowire 131 by a predetermined ratio or more, there is a risk that the contact portion 132 and the silicon substrate 100 may not be insulated during the manufacturing process. In other words, the contact portion 132 and the silicon substrate 100 may not be separated by the second silicon oxide layer Ox2.

In determining the width of the silicon nanowire 131 and the width of the contact portion 132, it is necessary to determine numerical values such as the thickness of the second silicon oxide film Ox2 and the height of the support structure 120 together. A method for manufacturing a contact structure of a sensor using silicon nanowires below will be described in detail.

A silicide 140 (TiSi ₂ ) may be formed on the upper surface of the contact portion 132 , and an electrode pattern 160 made of a metal material is formed on the silicide 140 . The silicide 140 is formed on a contact surface between the contact portion 132 made of silicon and the electrode pattern 160 made of metal to improve bonding between the contact portion 132 and the electrode pattern 160 .

1 shows a structure in which the contact unit 132 and the electrode pattern 160 contact each other at one point, the contact unit 132 and the electrode pattern 160 may be configured to contact each other at two or more points. can That is, in determining the length G2 of the contact portion 132, a length longer than a length sufficient for the contact portion 132 and the electrode pattern 160 to contact at one point is determined, and the contact portion 132 and the electrode pattern 160 may be formed to contact at two or more points. In this case, even if contact failure occurs at one point, ohmic contact is possible at another point, so the defect rate can be reduced.

An insulating layer 150 having via holes is formed on the silicon substrate 100 on which the silicon nanowires 131 and the contact portion 132 are formed. The insulating layer 150 protects and electrically insulates the silicon nanowires 131 and the contact portion 132 . A via hole of the insulating layer 150 is formed on the contact portion 132 , and an electrode pattern 160 made of a metal material is connected to the contact portion 132 through the via hole. The electrode pattern 160 receives the current generated by the silicon nanowire 131 through the contact unit 132 and transmits it to an external circuit, for example, when the silicon nanowire 131 operates as a photodetection sensor. .

A method for manufacturing a contact structure of a sensor using silicon nanowires according to an embodiment of the present invention includes a wire area AR131 having a first width W1 on one surface of a silicon substrate 100 and a wire area AR131 having a first width W1. A mask forming step of forming at least one patterned mask having a contact region AR132 connected to an end and having a second width W2 greater than the first width W1, and an etching and oxidation process using the mask. By performing, forming a contact portion 132 wider than the silicon nanowire 131 at the end of the silicon nanowire 131 and the silicon nanowire 131 on the silicon substrate 100, a nanowire forming step, An electrode pattern 160 forming step of forming an electrode pattern 160 made of metal on the contact portion 132 is included.

FIG. 3A is a view illustrating a step of preparing a silicon substrate 100, and FIG. 3B is a cross-sectional view taken along line AA' of FIG. 3A. First, as shown in FIGS. 3A and 3B , a single crystal silicon substrate 100 having a crystal orientation of <100> is prepared.

FIG. 4A is a view illustrating a step of forming a first silicon oxide film and a first silicon nitride film on a silicon substrate 100, and FIG. 4B is a cross-sectional view taken along line AA′ of FIG. 4A.

Next, as shown in FIGS. 4A and 4B , a first silicon oxide film Ox1 (SiO ₂ ) is formed on one surface of the silicon substrate 100 using a dry oxidation method, and the first A first silicon nitride layer Nx1 (Si ₃ N ₄ ) is sequentially formed on the silicon oxide layer Ox1 (SiO ₂ ) using low pressure chemical vapor deposition (LPCVD).

FIG. 5A is a view showing a step of forming a mask on a silicon substrate 100, FIG. 5B is a cross-sectional view along line AA′ of FIG. 5A, and FIG. 5C is a plan view of FIG. 5A showing a mask pattern.

Next, as shown in FIGS. 5A, 5B, and 5C, after coating the first photoresist PR1 on the first silicon nitride film Nx1, the first photoresist PR1 is subjected to a photolithography process. A mask is formed by forming a predetermined pattern Pt on PR1 and sequentially removing the first silicon nitride film Nx1 and the first silicon oxide film Ox1 exposed through a dry etching process.

As shown in FIG. 5C , the pattern Pt has a wire region AR131 having a first width W1 and a second width connected to an end of the wire region AR131 and greater than the first width W1. and a contact region AR132 having (W2). At least one pattern Pt may be formed to be spaced apart at a predetermined interval in the width direction. In the pattern Pt, the wire region AR131 in the middle is narrow and long, and the contact regions AR132 at both ends of the wire region AR131 may be formed in a dumbbell-like shape with a wide area.

Since the silicon nanowire 131 is formed in the wire region AR131 and the contact portion 132 is formed in the contact region AR132, the widths (F1, F2) of the silicon nanowire 131 and the contact portion 132 are The widths W1 and W2 and the lengths L1 and L2 of the wire region AR131 and the contact region AR132 are determined to be larger than the lengths G1 and G2. The first length L1 of the wire region AR131 corresponds to the length G1 of the silicon nanowire 131 to be manufactured. The second length L2 of the contact region AR132 is determined to be longer than the length G2 of the contact portion 132 .

6A is a view showing a step of forming the column structure 110 by an etching process using a mask, FIG. 6B is a cross-sectional view taken along AA' of FIG. 6A, and FIG. 6C is taken along BB' of FIG. 6d is a cross-sectional view taken along line C-C' of FIG. 6a.

Next, as shown in FIGS. 6A and 6B, a first silicon nitride film Nx1 exposed by a dry etching method using the pattern Pt formed on the first photoresist PR1 as a mask, and The first silicon oxide film Ox1 is sequentially removed, and the silicon substrate 100 is subsequently etched to a certain depth to form a column structure 110 having a constant height H and the same planar shape as the mask, 1 Remove the photoresist (PR1). At least one column structure 110 may be formed at a predetermined interval in the width direction. The etching depth of the silicon substrate 100 becomes the height H of the column structure 110 .

As shown in FIG. 6C, a portion of the column structure 110 corresponding to the wire region AR131 of the pattern Pt is formed to have the same first width W1 of the pattern Pt, and as shown in FIG. 6D Similarly, the portion of the column structure 110 corresponding to the contact area AR132 of the pattern Pt is formed equal to the second width W2 of the pattern Pt.

Figure 7a is a view showing the step of forming the support structure 120 by an anisotropic etching process using a mask, Figure 7b is a cross-sectional view along A-A' of Figure 7a, Figure 7c is a BB' of Figure 7a FIG. 7d is a cross-sectional view taken along line C-C′ of FIG. 7a.

Next, as shown in FIGS. 7a, 7b, 7c, and 7d, the silicon substrate 100 is anisotropic etched using a KOH solution (or TMAH solution). When the anisotropic etching process is completed, the columnar structure 110 of the silicon substrate 100 has a narrow middle section (120m) and a top section (120h) and bottom section (120l) width due to anisotropic etching characteristics along the crystal direction of silicon. It is formed as a support structure 120 having an hourglass shape that is wider than the middle portion.

As shown in FIG. 7C , the width of the upper end 120h1 of the support structure 120 corresponding to the wire region AR131 of the pattern Pt is equal to the first width W1 of the pattern Pt, and The width R1 of (120m1) is smaller than the first width W1. As shown in FIG. 7D, the width of the upper end 120h2 of the portion of the support structure 120 corresponding to the contact area AR132 of the pattern Pt is equal to the second width W2 of the pattern Pt, and The width R2 of (120 m2) is smaller than the first width W2.

Since the portion of the support structure 120 corresponding to the wire region AR131 of the pattern Pt and the portion of the support structure 120 corresponding to the contact region AR132 of the pattern Pt undergo an anisotropic etching process at the same time, the side surface Since the etching degree is the same and the second width W2 is greater than the first width W1 of the pattern Pt, the middle width of the portion of the support structure 120 corresponding to the wire region AR131 of the pattern Pt The interrupted width R2 of the portion of the support structure 120 corresponding to the contact area AR132 of the pattern Pt is greater than that of (R1).

The angle θ between the top and side surfaces of the support structure 120 is the same in the wire area AR131 and the contact area AR132. This angle θ is determined according to the crystal orientation of the silicon substrate 100 <100> and may be 54.7°.

FIG. 7E is a view showing a change in the width R of the intermediate portion 120m of the support structure 120 with respect to the height H of the column structure 110 when the width W of the pattern Pt is the same.

When the height H1 of the column structure 110 is lower than the width W (see (1) of FIG. 7E), the anisotropic etching process increases the width R of the middle portion (120 m) of the support structure 120. is formed As in this case, when the interruption width R is too wide, the silicon nanowires 131 and the silicon substrate 100 may not be separated during the subsequent wet oxidation process of forming the silicon nanowires.

When the height (H2) of the column structure 110 is suitable compared to the width (W) (see (2) of FIG. 7E), the width (R) of the support structure 120 is formed appropriately, so that in the subsequent wet oxidation process In the process of forming the silicon nanowires, the silicon nanowires 131 and the silicon substrate 100 are properly separated, so that the silicon nanowires can be formed smoothly.

When the height (H3) of the column structure 110 is higher than the width (W) (see (3) of FIG. 7E), the anisotropic etching process removes all of the middle portion (120m) of the support structure 120 and supports the support structure 120. The upper end 120h of the structure 120 is separated from the silicon substrate 100, making it difficult to manufacture the nanowires thereafter.

Therefore, in determining the height (H) of the column structure 110, an appropriate height should be selected in consideration of the width (W) of the pattern (Pt), and the anisotropic etching and crystal orientation of the silicon substrate 100 <100> Due to its characteristics, the angle θ between the top and side surfaces of the support structure 120 should be considered. For example, an appropriate height (H) can be obtained as in Equation 1 based on the width (W) of the pattern (Pt), the width (R) of the middle (120m) of the support structure 120, and the angle (θ) value. there is.

[ Equation 1 ]

H=(W-R)tan(θ)

FIG. 8A is a view showing a step of forming silicon nanowires 131 and contact portions 132 by a wet oxidation process using a mask, FIG. 8B is a cross-sectional view taken along line A-A' of FIG. 8A, and FIG. 8C is FIG. 8A is a cross-sectional view taken along line BB', and FIG. 8D is a cross-sectional view taken along line C-C' in FIG. 8A.

Next, as shown in FIGS. 8A and 8B , when a wet oxidation process is performed on the silicon substrate 100, a second silicon oxide film is formed on the exposed silicon substrate 100 and the side surface 120s of the support structure 120. (Ox2) is formed. In the wet oxidation process, since water molecules cannot pass through the silicon nitride film, the second silicon oxide film Ox2 is not formed on the upper surface of the hourglass-shaped support structure 120 but is formed on the side surface 120s of the support structure. By oxidizing silicon on the side surface and middle portion 120m of the upper end 120h of the support structure 120 to form a second silicon oxide film Ox2, the silicon nanowire 131 and the silicon nanowires 131 and A contact portion 132 is formed.

8C and 8D, the silicon nanowires 131 and the contact portion 132 are formed by the second silicon oxide film Ox2 formed on the side surfaces 120s and the middle portion 120m of the support structure 120. It is insulated from the silicon substrate 100. A second silicon oxide film Ox2 is grown from both sides of the middle 120m1 of the support structure 120 corresponding to the contact area AR132 of the pattern Pt toward the inside of the support structure 120 by a wet oxidation process. Thus, the wet oxidation process is performed for more than a minimum time to meet each other. However, when the second silicon oxide film Ox2 is formed to the center of the upper end 120h1 of the support structure 120 corresponding to the wire region AR131 of the pattern Pt, the silicon nanowire 131 cannot be formed. There is a maximum run time for the wet oxidation process. The execution time of the wet oxidation process should be performed within an appropriate range considering the width of the middle part (120m) and the upper part (120h) of the support structure 120.

FIG. 8E is a view showing a relationship between the thickness Tox of the second silicon oxide layer Ox2 formed by the wet oxidation process and the width R of the middle portion 120m of the support structure 120 .

As shown in FIG. 8E , the second silicon oxide film Ox2 formed on the support structure 120 is formed on the inside and outside of the support structure 120 around the side surface 120s. 45% of the second silicon oxide film Ox2 is formed inward from the side surface 120s of the support structure 120 (0.45 Tox), and 55% of the second silicon oxide film Ox2 is formed on the side surface 120 of the support structure 120. (120s) is formed in the outward direction (0.55Tox).

Therefore, if the silicon nanowires 131 are formed on the upper end 120h of the support structure 120 by the wet oxidation process and the silicon nanowires 131 and the silicon substrate 100 are insulated from each other, the support structure 120 The second silicon oxide film Ox2 should be formed to a sufficient thickness Tox so that the second silicon oxide film Ox2 formed inside the middle 120m can be connected to each other. Since the second silicon oxide film Ox2 is formed in an inward direction perpendicular to the side surface 120s of the support structure 120, the angle θ between the upper surface and the side surface 120s of the support structure 120 and the support structure 120 ), the minimum thickness (Tox-min) of the second silicon oxide film Ox2 required for the width R of 120 m may be determined using Equation 2.

[ Equation 2 ]

(R/2)sin(θ) = 0.45Tox

⇒ Tox-min = (R/0.9)sin(θ)

The time of the wet oxidation process may be adjusted so that the silicon oxide layer is formed thicker than the minimum thickness (Tox-min) of the second silicon oxide layer Ox2 determined as described above.

8C and 8D again, the width W1 of the upper end 120h1 of the support structure 120 in the wire area AR131 and the width W2 of the upper end 120h2 of the support structure 120 in the contact area AR132. The difference (Kw, Kw = W2-W1) and the difference between the width (F1) of the silicon nanowire 131 and the width (F2) of the contact portion 132 (Kf, Kf = F2-F1) are the same. (Kw=Kf). Even if the widths W1 and W2 of the support structure 120 are different, the second silicon oxide film Ox2 having the same thickness Tox is formed by the wet oxidation process for the same time.

FIG. 9A is a view showing a step of exposing the silicon nanowires 131 and the contact portion 132 by removing the mask, FIG. 9B is a cross-sectional view taken along line A-A' of FIG. 9A, and FIG. 9C is B of FIG. 9A. It is a cross-sectional view along -B'.

As shown in FIGS. 9A, 9B, and 9C, when the first silicon oxide film Ox1 and the first silicon nitride film Nx1 used as masks are removed, the upper surfaces of the silicon nanowires 131 and the contact portion 132 are removed. this is exposed The silicon nanowire 131 is formed on a portion of the support structure 120 corresponding to the wire region AR131 of the pattern Pt, and the contact portion 132 is formed on a support corresponding to the contact region AR132 of the pattern Pt. It is formed on the structure 120 part. The width F1 of the silicon nanowire 131 and the width F2 of the contact portion 132 according to the dimensions of the first width W1 and the second width W2 of the pattern Pt and the wet etching process execution time Since this is determined, the dimensions of the pattern Pt can be calculated based on the dimensions of the silicon nanowires 131 and the contact portion 132 to be manufactured.

As shown in FIG. 10 , a sensor using silicon nanowires may be formed by forming the silicide 140 on the contact portion 132 and forming the insulating layer 150 and the electrode pattern 160 . Before forming the insulating layer 150 and the electrode pattern 160, the silicon nanowire 131 is doped with a P-type dopant and an N-type dopant to convert the silicon nanowire 131 into a device such as a diode. can form

The silicide 140 may be formed by forming a metal layer such as Ti on the contact portion 132 and heat treatment, and insulating the silicon substrate 100 to cover the silicon nanowires 131 and the contact portion 132. A layer 150 is formed, a via hole is formed in the insulating layer 150 through the contact part 132, and the electrode pattern 160 connected to the contact part 132 through the via hole of the insulating layer 150 is sequentially formed. can be formed as

In the above-described method for manufacturing a contact structure of a sensor using silicon nanowires according to an embodiment of the present invention, the silicon nanowires 131 and the contact portion 132 can be formed using an etching and oxidation process, and the etching A manufacturing method capable of adjusting the widths of the silicon nanowires 131 and the contact portion 132 by adjusting factors such as the width of a mask used and the time of an oxidation process is provided.

In addition, since the metal electrode pattern 160 can be connected to the contact portion 132 that is connected to the end of the silicon nanowire 131 and has a wider width than the silicon nanowire 131, the electrode pattern 160 is a silicon nanowire ( 131), the contact area between silicon and metal is wider than in the case of direct connection, so ohmic contact is improved.

Although the present invention has been described in detail through specific examples, this is for explaining the present invention in detail, the present invention is not limited thereto, and within the technical spirit of the present invention, by those skilled in the art It will be clear that the modification or improvement is possible.

All simple modifications or changes of the present invention fall within the scope of the present invention, and the specific protection scope of the present invention will be clarified by the appended claims.

100: silicon substrate Ox1: first silicon oxide film
Nx1: first silicon nitride film PR1: first photoresist
Ox2: second silicon oxide film Pt: pattern
110: column structure 120: support structure
Ox2: second silicon oxide film 131: silicon nanowire
132: contact part 140: silicide
150: insulating layer 160: electrode pattern

Claims (6)

silicon substrate;
at least one silicon nanowire formed on the silicon substrate;
a contact portion connected to an end of the silicon nanowire and having a wider width than the silicon nanowire; and
An electrode pattern connected to the contact unit and transmitting an electrical signal to the silicon nanowire,
The contact portion is connected to both ends of the silicon nanowire one by one and is integrally formed with the silicon nanowire,
The contact structure of a sensor using silicon nanowires in which the contact portion and the electrode pattern are formed to contact at two or more points. delete The method of claim 1,
A contact structure of a sensor using silicon nanowires, further comprising silicide formed on a contact surface between the contact portion made of silicon and the electrode pattern made of metal to improve bonding between the contact portion and the electrode pattern. forming at least one patterned mask having a wire region having a first width and a contact region connected to an end of the wire region and having a second width greater than the first width on one surface of the silicon substrate;
a nanowire forming step of performing an etching and oxidation process using the mask to form silicon nanowires on the silicon substrate and a contact portion wider than the silicon nanowires at an end of the silicon nanowires;
An electrode pattern forming step of forming an electrode pattern made of a metal material on the contact portion,
The contact portion is connected to both ends of the silicon nanowire one by one and is integrally formed with the silicon nanowire,
A method for manufacturing a contact structure of a sensor using silicon nanowires in which the contact portion and the electrode pattern are formed to contact at two or more points. The method of claim 4,
The nanowire formation step is
etching the silicon substrate to a predetermined depth using the mask to form a column structure having a constant height and having the same plane as that of the mask;
Anisotropically etching the column structure to form a support structure having an hourglass shape in cross section in a width direction;
A method for manufacturing a contact structure of a sensor using silicon nanowires, comprising the step of wet-oxidizing the columnar structure to form the silicon nanowires and a contact portion on top of the columnar structure. The method of claim 5,
Forming the support structure
A method for manufacturing a contact structure of a sensor using nanowires, in which the execution time of the wet oxidation process is increased in proportion to the first width and the second width of the pattern.

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