KR102501096B1 - 플라즈마 반응기의 전극들에의 전력 인가 - Google Patents

플라즈마 반응기의 전극들에의 전력 인가 Download PDF

Info

Publication number
KR102501096B1
KR102501096B1 KR1020197034555A KR20197034555A KR102501096B1 KR 102501096 B1 KR102501096 B1 KR 102501096B1 KR 1020197034555 A KR1020197034555 A KR 1020197034555A KR 20197034555 A KR20197034555 A KR 20197034555A KR 102501096 B1 KR102501096 B1 KR 102501096B1
Authority
KR
South Korea
Prior art keywords
filaments
plasma
chamber
signal
delete delete
Prior art date
Application number
KR1020197034555A
Other languages
English (en)
Korean (ko)
Other versions
KR20190134810A (ko
Inventor
케네스 에스. 콜린스
카르티크 라마스와미
유에 궈
샤히드 라우프
칼롤 베라
제임스 디. 카르두치
마이클 알. 라이스
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20190134810A publication Critical patent/KR20190134810A/ko
Application granted granted Critical
Publication of KR102501096B1 publication Critical patent/KR102501096B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1020197034555A 2017-04-24 2018-04-23 플라즈마 반응기의 전극들에의 전력 인가 KR102501096B1 (ko)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US201762489344P 2017-04-24 2017-04-24
US62/489,344 2017-04-24
US201762523761P 2017-06-22 2017-06-22
US201762523763P 2017-06-22 2017-06-22
US201762523759P 2017-06-22 2017-06-22
US62/523,761 2017-06-22
US62/523,759 2017-06-22
US62/523,763 2017-06-22
PCT/US2018/028936 WO2018200409A1 (en) 2017-04-24 2018-04-23 Applying power to electrodes of plasma reactor

Publications (2)

Publication Number Publication Date
KR20190134810A KR20190134810A (ko) 2019-12-04
KR102501096B1 true KR102501096B1 (ko) 2023-02-17

Family

ID=63920395

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020197034555A KR102501096B1 (ko) 2017-04-24 2018-04-23 플라즈마 반응기의 전극들에의 전력 인가

Country Status (5)

Country Link
JP (1) JP7098654B2 (zh)
KR (1) KR102501096B1 (zh)
CN (1) CN110603621A (zh)
TW (1) TWI800505B (zh)
WO (1) WO2018200409A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12106938B2 (en) * 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
JP7431210B2 (ja) * 2021-12-28 2024-02-14 株式会社Kokusai Electric 基板処理装置、プラズマ生成装置、半導体装置の製造方法、プラズマ生成方法及びプログラム

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004128159A (ja) * 2002-10-01 2004-04-22 Mitsubishi Heavy Ind Ltd 高周波プラズマ発生装置および高周波プラズマ発生方法
JP2008016476A (ja) * 2006-07-03 2008-01-24 Hitachi Kokusai Electric Inc 半導体製造装置
US20090133840A1 (en) * 2004-03-15 2009-05-28 Sungkyunkwan University Inductively coupled plasma apparatus
JP2014049541A (ja) * 2012-08-30 2014-03-17 Mitsubishi Heavy Ind Ltd 薄膜製造装置及びその電極電圧調整方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3907087B2 (ja) * 1996-10-28 2007-04-18 キヤノンアネルバ株式会社 プラズマ処理装置
US6161499A (en) * 1997-07-07 2000-12-19 Cvd Diamond Corporation Apparatus and method for nucleation and deposition of diamond using hot-filament DC plasma
JP3501668B2 (ja) * 1997-12-10 2004-03-02 キヤノン株式会社 プラズマｃｖｄ方法及びプラズマｃｖｄ装置
TW507256B (en) * 2000-03-13 2002-10-21 Mitsubishi Heavy Ind Ltd Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus
JP2004055600A (ja) * 2002-07-16 2004-02-19 Tokyo Electron Ltd プラズマ処理装置
JP3902113B2 (ja) * 2002-10-31 2007-04-04 三菱重工業株式会社 プラズマ化学蒸着方法
JP4634138B2 (ja) 2004-12-27 2011-02-16 日本碍子株式会社 プラズマ発生電極及びプラズマ反応器
US20070031609A1 (en) 2005-07-29 2007-02-08 Ajay Kumar Chemical vapor deposition chamber with dual frequency bias and method for manufacturing a photomask using the same
US8372238B2 (en) * 2008-05-20 2013-02-12 Nordson Corporation Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes
KR100994502B1 (ko) * 2008-12-10 2010-11-15 엘아이지에이디피 주식회사 플라즈마 처리장치 및 방법
KR101552726B1 (ko) * 2009-02-04 2015-09-11 엘지전자 주식회사 플라즈마 화학 기상 증착 장치
US10153133B2 (en) * 2015-03-23 2018-12-11 Applied Materials, Inc. Plasma reactor having digital control over rotation frequency of a microwave field with direct up-conversion

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004128159A (ja) * 2002-10-01 2004-04-22 Mitsubishi Heavy Ind Ltd 高周波プラズマ発生装置および高周波プラズマ発生方法
US20090133840A1 (en) * 2004-03-15 2009-05-28 Sungkyunkwan University Inductively coupled plasma apparatus
JP2008016476A (ja) * 2006-07-03 2008-01-24 Hitachi Kokusai Electric Inc 半導体製造装置
JP2014049541A (ja) * 2012-08-30 2014-03-17 Mitsubishi Heavy Ind Ltd 薄膜製造装置及びその電極電圧調整方法

Also Published As

Publication number Publication date
WO2018200409A1 (en) 2018-11-01
JP7098654B2 (ja) 2022-07-11
KR20190134810A (ko) 2019-12-04
TWI800505B (zh) 2023-05-01
JP2020521270A (ja) 2020-07-16
CN110603621A (zh) 2019-12-20
TW201907045A (zh) 2019-02-16

Similar Documents

Publication Publication Date Title
US11114284B2 (en) Plasma reactor with electrode array in ceiling
US20180308663A1 (en) Plasma reactor with phase shift applied across electrode array
US10510515B2 (en) Processing tool with electrically switched electrode assembly
KR102505096B1 (ko) 전극 필라멘트들을 갖는 플라즈마 반응기
JP7198228B2 (ja) 電極アセンブリを備えたプラズマチャンバ
KR102586592B1 (ko) 고온 rf 가열기 페디스털들
JP7345600B2 (ja) 空間プラズマ原子層堆積（ｐｅ－ａｌｄ）処理ツール用のマイクロ波プラズマ源
CN113169020B (zh) 电极阵列
US11355321B2 (en) Plasma reactor with electrode assembly for moving substrate
KR102501096B1 (ko) 플라즈마 반응기의 전극들에의 전력 인가
US20180308664A1 (en) Plasma reactor with filaments and rf power applied at multiple frequencies
US20180308667A1 (en) Plasma reactor with groups of electrodes
TW202247711A (zh) 用於空間電漿增強原子層沉積（pe-ald）處理工具的微波電漿源

Legal Events

Date Code Title Description
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant