KR102495480B1 - 산란계측 측정들에서의 격자 비대칭성들에 관련된 부정확성들의 완화 - Google Patents

산란계측 측정들에서의 격자 비대칭성들에 관련된 부정확성들의 완화 Download PDF

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KR102495480B1
KR102495480B1 KR1020197026117A KR20197026117A KR102495480B1 KR 102495480 B1 KR102495480 B1 KR 102495480B1 KR 1020197026117 A KR1020197026117 A KR 1020197026117A KR 20197026117 A KR20197026117 A KR 20197026117A KR 102495480 B1 KR102495480 B1 KR 102495480B1
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cells
periodic structure
sub
resolution
wafer layer
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KR20190107298A (ko
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이도 아담
블라디미르 레빈스키
암논 마나쎈
유발 루바쉐프스키
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케이엘에이 코포레이션
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/32—Fiducial marks and measuring scales within the optical system
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/28—Systems for automatic generation of focusing signals
    • G02B7/36—Systems for automatic generation of focusing signals using image sharpness techniques, e.g. image processing techniques for generating autofocus signals
    • G02B7/38—Systems for automatic generation of focusing signals using image sharpness techniques, e.g. image processing techniques for generating autofocus signals measured at different points on the optical axis, e.g. focussing on two or more planes and comparing image data
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/80—Analysis of captured images to determine intrinsic or extrinsic camera parameters, i.e. camera calibration
    • H01L22/22—
    • H01L22/26—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/67—Focus control based on electronic image sensor signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/67—Focus control based on electronic image sensor signals
    • H04N23/672—Focus control based on electronic image sensor signals based on the phase difference signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/67—Focus control based on electronic image sensor signals
    • H04N23/673—Focus control based on electronic image sensor signals based on contrast or high frequency components of image signals, e.g. hill climbing method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/232—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising connection or disconnection of parts of a device in response to a measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Optics & Photonics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Developing Agents For Electrophotography (AREA)
  • Measuring And Recording Apparatus For Diagnosis (AREA)
  • Eye Examination Apparatus (AREA)
KR1020197026117A 2017-02-10 2017-12-15 산란계측 측정들에서의 격자 비대칭성들에 관련된 부정확성들의 완화 Active KR102495480B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762457787P 2017-02-10 2017-02-10
US62/457,787 2017-02-10
PCT/US2017/066853 WO2018147938A1 (en) 2017-02-10 2017-12-15 Mitigation of inaccuracies related to grating asymmetries in scatterometry measurements

Publications (2)

Publication Number Publication Date
KR20190107298A KR20190107298A (ko) 2019-09-19
KR102495480B1 true KR102495480B1 (ko) 2023-02-02

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Country Status (8)

Country Link
US (1) US11112704B2 (https=)
JP (1) JP7179742B2 (https=)
KR (1) KR102495480B1 (https=)
CN (1) CN110312966B (https=)
DE (1) DE112017007043T5 (https=)
SG (1) SG11201906424WA (https=)
TW (1) TWI767989B (https=)
WO (1) WO2018147938A1 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10705435B2 (en) 2018-01-12 2020-07-07 Globalfoundries Inc. Self-referencing and self-calibrating interference pattern overlay measurement
TWI799654B (zh) * 2018-11-29 2023-04-21 美商科磊股份有限公司 度量衡目標，半導體度量衡的方法，電腦程式產品，及度量衡模組
US11256177B2 (en) 2019-09-11 2022-02-22 Kla Corporation Imaging overlay targets using Moiré elements and rotational symmetry arrangements
US11686576B2 (en) 2020-06-04 2023-06-27 Kla Corporation Metrology target for one-dimensional measurement of periodic misregistration
US11720031B2 (en) 2021-06-28 2023-08-08 Kla Corporation Overlay design for electron beam and scatterometry overlay measurements
US11796925B2 (en) 2022-01-03 2023-10-24 Kla Corporation Scanning overlay metrology using overlay targets having multiple spatial frequencies
US12032300B2 (en) 2022-02-14 2024-07-09 Kla Corporation Imaging overlay with mutually coherent oblique illumination
US12422363B2 (en) 2022-03-30 2025-09-23 Kla Corporation Scanning scatterometry overlay metrology
US12487190B2 (en) 2022-03-30 2025-12-02 Kla Corporation System and method for isolation of specific fourier pupil frequency in overlay metrology
EP4303658A1 (en) * 2022-07-05 2024-01-10 ASML Netherlands B.V. Method of correction metrology signal data
US12253805B2 (en) * 2022-08-11 2025-03-18 Kla Corporation Scatterometry overlay metrology with orthogonal fine-pitch segmentation
US20240167813A1 (en) * 2022-11-23 2024-05-23 Kla Corporation System and method for suppression of tool induced shift in scanning overlay metrology
CN116105599B (zh) * 2023-01-17 2025-10-24 中国科学院微电子研究所 非对称光栅标记的误差检测方法及装置
US12235588B2 (en) 2023-02-16 2025-02-25 Kla Corporation Scanning overlay metrology with high signal to noise ratio
US12411420B2 (en) * 2023-09-29 2025-09-09 Kla Corporation Small in-die target design for overlay measurement

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040246482A1 (en) * 2003-06-06 2004-12-09 Abdurrahman Sezginer Diffracting, aperiodic targets for overlay metrology and method to detect gross overlay
US20070229829A1 (en) 2006-03-31 2007-10-04 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US20130342831A1 (en) * 2012-06-26 2013-12-26 Kla-Tencor Corporation Device-like scatterometry overlay targets
US20150138555A1 (en) 2013-11-20 2015-05-21 Globalfoundries Inc. Overlay metrology system and method

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4757207A (en) * 1987-03-03 1988-07-12 International Business Machines Corporation Measurement of registration of overlaid test patterns by the use of reflected light
CA2073409A1 (en) * 1991-10-15 1993-04-16 Paul F. Sullivan Light beam position detection and control apparatus employing diffraction patterns
US6023338A (en) * 1996-07-12 2000-02-08 Bareket; Noah Overlay alignment measurement of wafers
US6271047B1 (en) * 1998-05-21 2001-08-07 Nikon Corporation Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
JP2001194321A (ja) * 2000-01-12 2001-07-19 Tokyo Seimitsu Co Ltd 半導体ウエハの検査装置
US7541201B2 (en) * 2000-08-30 2009-06-02 Kla-Tencor Technologies Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
US7068833B1 (en) * 2000-08-30 2006-06-27 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
IL138552A (en) * 2000-09-19 2006-08-01 Nova Measuring Instr Ltd Lateral shift measurement using an optical technique
TW526573B (en) * 2000-12-27 2003-04-01 Koninkl Philips Electronics Nv Method of measuring overlay
WO2002065545A2 (en) * 2001-02-12 2002-08-22 Sensys Instruments Corporation Overlay alignment metrology using diffraction gratings
US20030002043A1 (en) * 2001-04-10 2003-01-02 Kla-Tencor Corporation Periodic patterns and technique to control misalignment
DE10142318C1 (de) * 2001-08-30 2003-01-30 Advanced Micro Devices Inc Halbleiterstruktur und Verfahren zur Bestimmung kritischer Dimensionen und Überlagerungsfehler
DE10142316A1 (de) * 2001-08-30 2003-04-17 Advanced Micro Devices Inc Halbleiterstruktur und Verfahren zur Bestimmung kritischer Dimensionen und Überlagerungsfehler
DE10142317B4 (de) * 2001-08-30 2010-07-01 Advanced Micro Devices, Inc., Sunnyvale Vorrichtung zur Bestimmung eines Überlagerungsfehlers und kritischer Dimensionen in einer Halbleiterstruktur mittels Streuungsmessung
US7050162B2 (en) * 2002-01-16 2006-05-23 Therma-Wave, Inc. Optical metrology tool having improved contrast
US7804994B2 (en) * 2002-02-15 2010-09-28 Kla-Tencor Technologies Corporation Overlay metrology and control method
JP3967935B2 (ja) * 2002-02-25 2007-08-29 株式会社日立製作所 合わせ精度計測装置及びその方法
DE10224164B4 (de) * 2002-05-31 2007-05-10 Advanced Micro Devices, Inc., Sunnyvale Eine zweidimensionale Struktur zum Bestimmen einer Überlagerungsgenauigkeit mittels Streuungsmessung
US7170604B2 (en) * 2002-07-03 2007-01-30 Tokyo Electron Limited Overlay metrology method and apparatus using more than one grating per measurement direction
US20040066517A1 (en) * 2002-09-05 2004-04-08 Hsu-Ting Huang Interferometry-based method and apparatus for overlay metrology
US7193715B2 (en) * 2002-11-14 2007-03-20 Tokyo Electron Limited Measurement of overlay using diffraction gratings when overlay exceeds the grating period
US7440105B2 (en) * 2002-12-05 2008-10-21 Kla-Tencor Technologies Corporation Continuously varying offset mark and methods of determining overlay
US7230703B2 (en) * 2003-07-17 2007-06-12 Tokyo Electron Limited Apparatus and method for measuring overlay by diffraction gratings
JP4074867B2 (ja) * 2003-11-04 2008-04-16 エーエスエムエル ネザーランズ ビー．ブイ． 第１及び第２位置合せマークの相対位置を計測する方法及び装置
DE60333688D1 (de) * 2003-12-19 2010-09-16 Ibm Differentielle metrologie für kritische abmessung und überlagerung
US7629697B2 (en) * 2004-11-12 2009-12-08 Asml Netherlands B.V. Marker structure and method for controlling alignment of layers of a multi-layered substrate
US7532305B2 (en) 2006-03-28 2009-05-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method using overlay measurement
US7528941B2 (en) * 2006-06-01 2009-05-05 Kla-Tencor Technolgies Corporation Order selected overlay metrology
US7772710B2 (en) * 2006-11-01 2010-08-10 Sematech, Inc. Zero-order overlay targets
JP4897006B2 (ja) * 2008-03-04 2012-03-14 エーエスエムエル ネザーランズ ビー．ブイ． アラインメントマークを設ける方法、デバイス製造方法及びリソグラフィ装置
NL2002932A1 (nl) * 2008-06-02 2009-12-03 Asml Netherlands Bv Sub-wavelength segmentation in measurement targets on substrates.
NL2003404A (en) * 2008-09-16 2010-03-17 Asml Netherlands Bv Inspection method and apparatus, substrate, lithographic apparatus, lithographic processing cell and device manufacturing method.
KR101295203B1 (ko) * 2008-10-06 2013-08-09 에이에스엠엘 네델란즈 비.브이. 2차원 타겟을 이용한 리소그래피 포커스 및 조사량 측정
US8189202B2 (en) * 2009-08-04 2012-05-29 Zygo Corporation Interferometer for determining overlay errors
TWI401549B (zh) * 2009-12-02 2013-07-11 Ind Tech Res Inst 二維陣列疊對圖樣之設計方法、疊對誤差量測方法及其量測系統
US9007584B2 (en) * 2010-12-27 2015-04-14 Nanometrics Incorporated Simultaneous measurement of multiple overlay errors using diffraction based overlay
CN104210047B (zh) * 2011-06-23 2016-09-28 旭化成株式会社 微细图案形成用积层体及微细图案形成用积层体的制造方法
WO2014062972A1 (en) 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
TWI598972B (zh) * 2012-11-09 2017-09-11 克萊譚克公司 減少散射量測疊對量測技術中演算法之不準確
JP6181284B2 (ja) 2013-03-20 2017-08-16 エーエスエムエル ネザーランズ ビー．ブイ． 微小構造の非対称性の測定方法ならびに測定装置、位置測定方法、位置測定装置、リソグラフィ装置およびデバイス製造方法
TWI689786B (zh) * 2013-07-26 2020-04-01 美商克萊譚克公司 量測系統
US9958791B2 (en) * 2013-10-30 2018-05-01 Asml Netherlands B.V. Inspection apparatus and methods, substrates having metrology targets, lithographic system and device manufacturing method
US9784690B2 (en) * 2014-05-12 2017-10-10 Kla-Tencor Corporation Apparatus, techniques, and target designs for measuring semiconductor parameters
US10228320B1 (en) * 2014-08-08 2019-03-12 KLA—Tencor Corporation Achieving a small pattern placement error in metrology targets
US9305884B1 (en) * 2014-09-26 2016-04-05 United Microelectronics Corp. Overlay mark and method for forming the same
US10210606B2 (en) * 2014-10-14 2019-02-19 Kla-Tencor Corporation Signal response metrology for image based and scatterometry overlay measurements
TWI715582B (zh) 2015-05-19 2021-01-11 美商克萊譚克公司 用於疊對測量之形貌相位控制
JP6789295B2 (ja) * 2015-12-08 2020-11-25 ケーエルエー コーポレイション 偏光ターゲットおよび偏光照明を用いた回折光の振幅および位相の制御
KR102788661B1 (ko) * 2016-04-04 2025-03-28 케이엘에이 코포레이션 필 팩터 변조에 의한 공정 호환성 개선

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040246482A1 (en) * 2003-06-06 2004-12-09 Abdurrahman Sezginer Diffracting, aperiodic targets for overlay metrology and method to detect gross overlay
US20070229829A1 (en) 2006-03-31 2007-10-04 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US20130342831A1 (en) * 2012-06-26 2013-12-26 Kla-Tencor Corporation Device-like scatterometry overlay targets
US20150138555A1 (en) 2013-11-20 2015-05-21 Globalfoundries Inc. Overlay metrology system and method

Also Published As

Publication number Publication date
US11112704B2 (en) 2021-09-07
TWI767989B (zh) 2022-06-21
CN110312966B (zh) 2022-03-25
SG11201906424WA (en) 2019-08-27
JP2020510857A (ja) 2020-04-09
JP7179742B2 (ja) 2022-11-29
KR20190107298A (ko) 2019-09-19
WO2018147938A1 (en) 2018-08-16
CN110312966A (zh) 2019-10-08
TW201835679A (zh) 2018-10-01
DE112017007043T5 (de) 2020-01-16
US20190033726A1 (en) 2019-01-31

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