KR102488970B1 - 노광 장치용 광원, 이를 사용한 노광 장치, 및 노광 방법 - Google Patents

노광 장치용 광원, 이를 사용한 노광 장치, 및 노광 방법 Download PDF

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Publication number
KR102488970B1
KR102488970B1 KR1020190150460A KR20190150460A KR102488970B1 KR 102488970 B1 KR102488970 B1 KR 102488970B1 KR 1020190150460 A KR1020190150460 A KR 1020190150460A KR 20190150460 A KR20190150460 A KR 20190150460A KR 102488970 B1 KR102488970 B1 KR 102488970B1
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KR
South Korea
Prior art keywords
light source
light
exposure
exposure apparatus
short
Prior art date
Application number
KR1020190150460A
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English (en)
Korean (ko)
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KR20200072398A (ko
Inventor
토미히코 이케다
토모히코 이노우에
테츠야 고다
켄이치 야마시타
카나 와타나베
Original Assignee
페닉스덴키가부시키가이샤
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Publication of KR20200072398A publication Critical patent/KR20200072398A/ko
Application granted granted Critical
Publication of KR102488970B1 publication Critical patent/KR102488970B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/7005—Production of exposure light, i.e. light sources by multiple sources, e.g. light-emitting diodes [LED] or light source arrays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020190150460A 2018-12-12 2019-11-21 노광 장치용 광원, 이를 사용한 노광 장치, 및 노광 방법 KR102488970B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018232630A JP7060244B2 (ja) 2018-12-12 2018-12-12 露光装置用光源、それを用いた露光装置、およびレジストの露光方法
JPJP-P-2018-232630 2018-12-12

Publications (2)

Publication Number Publication Date
KR20200072398A KR20200072398A (ko) 2020-06-22
KR102488970B1 true KR102488970B1 (ko) 2023-01-16

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KR1020190150460A KR102488970B1 (ko) 2018-12-12 2019-11-21 노광 장치용 광원, 이를 사용한 노광 장치, 및 노광 방법

Country Status (4)

Country Link
JP (1) JP7060244B2 (zh)
KR (1) KR102488970B1 (zh)
CN (1) CN111308862B (zh)
TW (1) TWI768271B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112612187A (zh) * 2020-12-31 2021-04-06 福州大学 一种实现大面积多光源高均匀性曝光装置及其制作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013069860A (ja) * 2011-09-22 2013-04-18 Orc Manufacturing Co Ltd Ｌｅｄ光源装置および露光装置
JP2016200751A (ja) * 2015-04-13 2016-12-01 フェニックス電機株式会社 光源装置及び露光装置とその検査方法
JP2017504842A (ja) * 2013-10-30 2017-02-09 インフィテック． カンパニー、 リミテッド 露光用ｌｅｄ光源装置及び露光用ｌｅｄ光源装置管理システム

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3326902B2 (ja) * 1993-09-10 2002-09-24 株式会社日立製作所 パターン検出方法及びパターン検出装置及びそれを用いた投影露光装置
CN1837961A (zh) * 2005-03-22 2006-09-27 日立比亚机械股份有限公司 曝光装置及曝光方法和配线印制电路板的制造方法
JP2008191252A (ja) 2007-02-01 2008-08-21 Phoenix Denki Kk 露光用光源ならびにこれを用いた露光装置
CN102483587B (zh) * 2010-07-22 2014-11-05 恩斯克科技有限公司 曝光装置用光照射装置、光照射装置的控制方法、曝光装置以及曝光方法
JP2013062721A (ja) 2011-09-14 2013-04-04 Denso Corp 過電流検出装置
JP6199591B2 (ja) 2013-04-12 2017-09-20 株式会社オーク製作所 光源装置および露光装置
JP2016066754A (ja) 2014-09-25 2016-04-28 東芝ライテック株式会社 光源装置
JP6503235B2 (ja) * 2015-06-02 2019-04-17 株式会社アドテックエンジニアリング 光源装置、露光装置及び光源制御方法
DE202016103819U1 (de) 2016-07-14 2017-10-20 Suss Microtec Lithography Gmbh Lichtquellenanordnung für ein Belichtungssystem sowie Fotolithografie-Belichtungssystem

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013069860A (ja) * 2011-09-22 2013-04-18 Orc Manufacturing Co Ltd Ｌｅｄ光源装置および露光装置
JP2017504842A (ja) * 2013-10-30 2017-02-09 インフィテック． カンパニー、 リミテッド 露光用ｌｅｄ光源装置及び露光用ｌｅｄ光源装置管理システム
JP2016200751A (ja) * 2015-04-13 2016-12-01 フェニックス電機株式会社 光源装置及び露光装置とその検査方法

Also Published As

Publication number Publication date
TW202022504A (zh) 2020-06-16
CN111308862B (zh) 2023-02-24
KR20200072398A (ko) 2020-06-22
JP7060244B2 (ja) 2022-04-26
JP2020095147A (ja) 2020-06-18
CN111308862A (zh) 2020-06-19
TWI768271B (zh) 2022-06-21

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