KR102475267B1 - Apparatus for growing large diameter single crystal and method for growing using the same - Google Patents

Abstract

A large-diameter single crystal growth apparatus according to an exemplary embodiment of the present invention includes a crucible into which raw materials are charged; a quartz tube with upper and lower parts open surrounding the crucible; a first heating means surrounding the quartz tube; a second heating means disposed around the lower circumference of the crucible within the quartz tube; and a third heating means disposed in the lower center of the crucible within the quartz tube. The first to third heating means may operate independently to heat the crucible.

Description

Large-diameter single crystal growth apparatus and growth method using the same

The present invention relates to a large-diameter single crystal growth apparatus and a growth method using the same.

As silicon (Si), which is used as a representative semiconductor device material, shows physical limitations, broadband semiconductor materials such as silicon carbide (SiC), gallium nitride (GaN), and aluminum nitride (AlN) are in the limelight as next-generation semiconductor device materials. have.

Here, compared to gallium nitride and aluminum nitride, silicon carbide has excellent thermal stability and excellent oxidation resistance. In addition, silicon carbide has an excellent thermal conductivity of about 4.6 W / Cm ℃, and has the advantage of being able to be produced as a large-diameter substrate of 6 inches or more in diameter, and is in the spotlight compared to substrates such as gallium nitride and aluminum nitride.

In recent years, as the diameter of silicon carbide has been further expanded, 6-inch substrates have been developed to the extent that production is possible, but production of substrates larger than 6 inches (eg, 8 to 10-inch substrates) is currently insufficient. In order to grow such a single crystal of silicon carbide, a PVT method (Physical Vapor Transport) is generally used.

That is, first, a seed crystal made of silicon carbide is attached to a seed crystal holder, and then charged into the growth equipment. Then, the raw material, that is, the silicon carbide powder charged into the crucible is heated and sublimated to grow a single crystal in the seed crystal.

At this time, the main driving force for sublimation is when a current is passed through the induction coil in the growth device, and heat is conducted and radiated from the outside to the inside by heating the skin of the crucible by high frequency. In this single crystal growth method, the larger the aperture, the greater the influence on the quality characteristics and yield of the grown single crystal.

On the other hand, in the case of conventionally small apertures of 6 inches or less, heating using a single induction coil does not have a significant effect on single crystal fabrication.

However, in a large-diameter application, the application of the single induction coil method as described above may cause various problems. If the diameter of the single crystal is widened, the size of the crucible also widens horizontally in proportion to this, so the temperature difference between the inner wall of the crucible and the center of the crucible increases, and uniform sublimation of the raw material powder is impossible.

Accordingly, since the grown ingot is not flat and has a convex center, it is difficult to implement a high-quality single crystal.

In addition, raw material powder that is not sublimated due to the low central temperature remains inside the crucible, ultimately reducing the yield of the ingot and increasing the process time for growing single crystals.

The present invention was devised to solve the above problems, and as uniform sublimation of the crucible is possible by blocking the horizontal temperature deviation of the crucible, a flat ingot with a non-convex center is made and a large-diameter single crystal can be realized. Its purpose is to provide a single crystal growth device and a growth method using the same.

A large-diameter single crystal growth apparatus according to an exemplary embodiment of the present invention includes a crucible into which raw materials are charged; a quartz tube with upper and lower parts open surrounding the crucible; a first heating means surrounding the quartz tube; a second heating means disposed around the lower circumference of the crucible within the quartz tube; and a third heating means disposed in the lower center of the crucible in the quartz tube, wherein the first to third heating means operate independently to heat the crucible, and the crucible is heated by the third heating means. An accommodation groove for accommodating the third heating means is provided at the bottom where the means is disposed, and the lower part of the crucible has an asymmetrical structure in which the thickness of the center is thinner than the thickness of the outer part, and the third heating means and the second heating means are They are spaced apart at predetermined intervals so as to be thermally separated from each other, and the third heating means may be configured to have a higher degree of resistance heating than the second heating means.

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The second heating means and the third heating means may each be a graphite plate for resistance heating the crucible by supplying a current.

The third heating means may have a higher resistivity than the second heating means.

The second heating means may have a through hole in the center, and the third heating means may be disposed in the through hole in a structure that does not come into contact with the second heating means.

A large-diameter single crystal growth apparatus according to an exemplary embodiment of the present invention includes a crucible into which raw materials are charged; a quartz tube with upper and lower parts open surrounding the crucible; a first heating means surrounding the quartz tube; a second heating means disposed around the lower circumference of the crucible within the quartz tube; and a third heating means disposed in the lower center of the crucible within the quartz tube, wherein the first to third heating means operate independently to heat the crucible, and An air gap is provided between the bottom of the crucible so that the second heating means is spaced apart from the lower surface of the crucible, the third heating means is in contact with the lower surface of the crucible, and the third heating means and the second heating means are in contact with the lower surface of the crucible. The heating means may be spaced apart from each other at a predetermined interval so as to be thermally separated from each other, and the third heating means may be configured to have a higher degree of resistance heating than the second heating means.

The crucible may have a receiving groove accommodating the third heating means at a lower portion where the third heating means is disposed.

A method for growing a large-diameter single crystal according to an exemplary embodiment of the present invention is a method for growing a large-diameter single crystal using the large-diameter single crystal growth device, comprising the steps of attaching a seed crystal to a seed crystal holder; arranging and fixing the seed crystal holder in an upper portion of a crucible into which a raw material is charged; a first heating step of heating the crucible with a first heating means so that the raw material is sublimated and attached to the seed crystal to grow into a single crystal; a second heating step of heating the crucible with a second heating means to block a horizontal temperature deviation of the crucible; and a third heating step of heating the crucible with a third heating means to block a horizontal temperature deviation of the crucible, wherein the first to third heating means may operate independently to heat the crucible.

The third heating means and the second heating means are spaced apart from each other by a predetermined interval so as to be thermally separated from each other, and the third heating means may be configured to have a higher degree of resistance heating than the second heating means.

When the raw material is silicon carbide (SiC), it can be grown into a 6H-SiC (6H-type silicon carbide) or 4H-SiC (4H-type silicon carbide) single crystal with a crystal polytype greater than 6 inches.

A large-diameter single crystal growth apparatus and a growth method using the same according to the present invention have the effect of realizing a high-quality single crystal by making a flat ingot with a non-convex center as uniform sublimation of the crucible is possible.

In addition, it solves the problem of lowering the yield of the ingot due to the raw material powder that is not sublimated due to the low central temperature, and consequently has the advantage of blocking the delay in the process time for growing a large-diameter single crystal.

1 is a cross-sectional view schematically showing a large-diameter single crystal growth apparatus according to an exemplary embodiment of the present invention.
2 is a schematic cross-sectional view of a large-diameter single crystal growth apparatus according to an exemplary embodiment of the present invention.
3 is a schematic cross-sectional view of a large-diameter single crystal growth apparatus according to an exemplary embodiment of the present invention.
4 is a flowchart schematically illustrating a method for growing a large-diameter single crystal according to an exemplary embodiment of the present invention.
5A to 5C are diagrams in which the temperature distribution of the entire crucible is calculated using simulation.
6a to 6c are photographs of raw material powders cut into longitudinal sections after single crystal growth experiments based on the simulation of FIG. 5 .

Hereinafter, preferred embodiments will be described in detail so that those skilled in the art can easily practice the present invention with reference to the accompanying drawings. However, in describing a preferred embodiment of the present invention in detail, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the gist of the present invention, the detailed description will be omitted. In addition, the same reference numerals are used throughout the drawings for parts having similar functions and actions.

In addition, throughout the specification, when a part is said to be 'connected' to another part, this is not only the case where it is 'directly connected', but also the case where it is 'indirectly connected' with another element in between. include In addition, 'including' a certain component means that other components may be further included, rather than excluding other components unless otherwise stated.

Referring to FIG. 1, a large-diameter single crystal growing apparatus according to an exemplary embodiment of the present invention will be described. 1 is a cross-sectional view schematically showing a large-diameter single crystal growth apparatus according to an exemplary embodiment of the present invention.

Referring to FIG. 1 , a large-diameter single crystal growth apparatus 1 according to an exemplary embodiment of the present invention includes a crucible 10 into which a raw material M is charged, a quartz tube 20 surrounding the crucible 10, and a crucible 10 ) May include a heating means 30 for heating.

The crucible 10 may include a body 12 and a cover 11 selectively closing an upper portion of the body 12 . At this time, the powdered raw material M is charged into the body 12, and the seed crystal holder 13 may be mounted on the lower surface of the cover 11.

The seed crystal holder 13 is a portion to which the seed crystal S made of silicon carbide is attached, and when the seed crystal S is attached to the seed crystal holder 13, the cover 11 covers the body 12. It is covered so that the seed crystal (S) is placed inside the crucible (10).

In addition to this, at least a portion of the crucible 10 may be covered by the heat insulating material 14 so as not to be exposed to the outside. Through this, when heated by the heating means 30, the inside can be maintained at a high temperature.

The quartz tube 20 has a cylindrical shape with upper and lower ends open, and when the crucible 10 is placed therein, a structure is formed surrounding the crucible 10.

Flanges (not shown) may be provided at open upper and lower portions of the quartz tube 20 to close the quartz tube 20 .

The heating unit 30 may include a first heating unit 31 , a second heating unit 32 , and a third heating unit 33 . The first to third heating means 31 , 32 , and 33 may operate independently to heat the crucible 10 .

The first heating means 31 is provided in a structure surrounding the quartz tube 20, and can induction heat the crucible 10 by supplying a high-frequency current. For example, the first heating unit 31 may be a high frequency induction coil.

The first heating unit 31 generates eddy currents near the surface of the crucible 10 to heat the crucible 10 when a high frequency current is supplied to the high frequency induction coil in a state where the crucible 10 is placed in the high frequency induction coil. heats up as a whole.

On the other hand, in growing a large-diameter single crystal having a large diameter in the horizontal direction, since there is a limit to uniform heating in the horizontal direction by the first heating means 31, the second heating means 32 is used to reduce the horizontal temperature deviation. And the third heating means 33 may be configured to additionally heat the crucible (10).

That is, the second heating means 32 and the third heating means 33, while the crucible 10 is heated by the eddy current by the high frequency induction coil of the first heating means 31, the crucible 10 In order to block the horizontal temperature deviation of the crucible 10, it can play a role of supplementing the problem that the temperature drops toward the center of the crucible 10.

As shown in FIG. 1 , the second heating means 32 may be disposed on the lower circumference (outside) of the crucible 10 within the quartz tube 20 . In this case, the second heating means 32 may be disposed within the heat insulating material 14 surrounding the crucible 10 .

The second heating means 32 may have a circular plate structure corresponding to the lower surface of the crucible 10 to substantially correspond to the cylindrical structure of the crucible 10 . In addition, a through hole 32a for accommodating the third heating means 33 may be formed in the center.

The second heating means 32 may be made of a graphite plate that resists heats the crucible 10 by supplying current.

For example, the second heating means 32 may be configured to have a higher degree of resistance heating toward the center, and heat with higher heat toward the center from the outer side of the crucible 10 in a state in contact with the lower surface of the crucible 10. Thus, it is possible to prevent a horizontal temperature deviation of the crucible 10 from occurring.

As for the graphite plate constituting the second heating means 32, those having higher resistivity toward the center may be used.

As the graphite plate is manufactured to have a higher specific resistance value toward the center toward the center, when a current flows through the graphite plate, resistance heating increases toward the center, resulting in horizontal temperature deviation of the crucible 10. can act to reduce

As another example, although not shown, the graphite plate may have a structure in which the thickness becomes thicker toward the center. That is, as the graphite plate increases the area where resistance current is generated toward the center, the corresponding heat generation also increases, so that when current flows, high-temperature heat is generated toward the center, thereby reducing the deviation of the horizontal temperature of the crucible 10. can

The second heating means 32 extends from the heat insulating material 14 and is electrically connected to an external electricity supply source (not shown), and is also electrically connected to the control unit 40 that operates and controls the first heating means 31. operation can be controlled.

The third heating means 33 may be disposed at the lower center (center) of the crucible 10 within the quartz tube 20 . In this case, the third heating means 33 may be disposed within the through hole 32a of the second heating means 32 . And, it may be spaced apart at a predetermined interval so as to be thermally separated from the second heating means 32 . For example, a heat insulating material 14 may be filled between the third heating means 33 and the second heating means 32 .

The third heating unit 33 may have a circular plate structure such that a portion in contact with the lower surface of the crucible 10 corresponds to the lower surface of the crucible 10 .

The third heating means 33 may be made of a graphite plate that resists heats the crucible 10 by supplying current.

For example, the third heating means 33 may be configured to have a higher degree of resistance heating than the second heating means 32, and the outer side of the crucible 10 in a state disposed in the center of the lower surface of the crucible 10. It is possible to prevent the horizontal temperature deviation of the crucible 10 from occurring by heating with higher heat toward the center.

A graphite plate constituting the third heating means 33 may have a higher resistivity value than that of the graphite plate constituting the second heating means 32 . That is, the graphite plate can be manufactured using a material having a higher resistivity than the graphite plate of the second heating unit 32 . For example, the third heating means 33 may have a resistivity value greater than 12 μΩm, and the second heating means 32 may have a resistivity value less than or equal to 12 μΩm.

Therefore, when a current flows to the graphite plate of the third heating means 33 disposed in the center and the graphite plate of the second heating means 32 disposed in the outer part with respect to the lower surface of the crucible 10, respectively, to the center As the resistance heating becomes higher as time goes by, the deviation of the horizontal temperature of the crucible 10 can be more effectively reduced.

Of course, the graphite plate constituting the third heating means 33 may be made of the same material as the graphite plate constituting the second heating means 32 . That is, they may have the same specific resistance value. In this case, the current flowing through the third heating means 33 and the current flowing through the second heating means 32 are controlled differently so that the heating temperature of the third heating means 33 is the heating temperature of the second heating means 32. It can be adjusted higher.

The third heating means 33 extends from the heat insulating material 14 and is electrically connected to an external electricity supply source (not shown), and also controls the operation and control of the first heating means 31 and the second heating means 32. (40) can also be operated and controlled electrically. In this case, the third heating means 33 can be independently operated and controlled from the second heating means 32 .

The large-diameter single crystal growth apparatus 1 configured as described above generates resistance heating at the bottom of the crucible 10 and includes a second heating means 32 and a third heating means 32 which are graphite plates to generate resistance heating toward the center. Since each means 33 is provided, uniform sublimation of the crucible 10 is possible by blocking the horizontal temperature deviation of the crucible 10, so that a flat ingot with a non-convex center can be made and a high-quality single crystal can be realized.

In addition, it is possible to solve the problem that the yield of the ingot is lowered due to the raw material (M) powder that is not sublimated due to the low central temperature, and as a result, delay in the process time for growing a large-diameter single crystal can be prevented.

Figure 2 schematically shows a modified example of a large-diameter single crystal growth apparatus according to an exemplary embodiment of the present invention.

Referring to FIG. 2 , an air gap AG may be provided between the second heating means 32 and the bottom of the crucible 10 . The second heating unit 32 may be spaced apart from the lower surface of the crucible 10 at a predetermined interval by an air gap AG interposed between the lower surface and the lower surface of the crucible 10 .

The second heating means 32 can indirectly heat the crucible 10 instead of directly heating it like the third heating means 33, and accordingly, the crucible 10 is heated at a lower temperature than the third heating means 33. it gets heated Through this, the temperature of the central portion of the crucible 10 may be higher than that of the outer portion.

3 schematically shows a modified example of a large-diameter single crystal growing device according to an exemplary embodiment of the present invention.

Referring to FIG. 3 , the crucible 10 may have a receiving groove 15 accommodating the third heating means 33 at a lower portion where the third heating means 33 is disposed. The accommodation groove 15 may be formed by being depressed to a predetermined depth in the center of the lower surface of the crucible 10, and thus the crucible 10 may have an asymmetrical structure in which the thickness of the center portion is smaller than the thickness of the outer portion. The third heating means 33 may be disposed in a structure inserted into the receiving groove 15 . Through this, the temperature of the central portion of the crucible 10 may be higher than that of the outer portion.

Referring to FIG. 4, a large-diameter single crystal growth method using the above-described large-diameter single crystal growth apparatus 1 will be described. At this time, since the specific structure of the components of the large-diameter single crystal growth apparatus 1 has already been described above, it will be omitted.

First, the raw material M is charged into the crucible 10 . Then, a seed crystal (S) made of silicon carbide is prepared, and the seed crystal (S) is attached to the seed crystal holder 13 (S10). Subsequently, the seed crystal holder 13 to which the seed crystal S is coupled is placed and fixed on the top of the crucible 10 (S20). Here, the raw material M may be provided in powder form.

That is, the cover 11 of the crucible 10 to which the seed crystal holder 13 is mounted is covered with the body 12 of the crucible 10 so that the seed crystal S is located at the top in the crucible 10.

Next, a first heating step of heating the crucible 10 with the first heating means 31 is performed to sublimate the raw material M so that it is attached to the seed crystal S and grown into a single crystal (S30).

For example, impurities contained in the crucible 10 are removed by heating for 2 to 3 hours at a temperature of less than about 1000° C. and vacuum pressure. Subsequently, air remaining inside the crucible 10 and between the crucible 10 and the insulator 14 is removed by injecting an inert gas, for example, argon (Ar) gas. Here, it is preferable to repeat the purging process using an inert gas 2 to 3 times.

Subsequently, after raising the pressure to atmospheric pressure, the crucible 10 is heated to a temperature of approximately 2000 ° C to 2300 ° C using the first heating means 31 . Here, the reason for maintaining the atmospheric pressure is to prevent the occurrence of unwanted polymorphs in the initial stage of crystal growth.

That is, first, while maintaining the atmospheric pressure, the temperature of the raw material M is raised to the growth temperature. Then, while maintaining the growth pressure by pressing the inside of the growth device at approximately 0.2 torr to 20 torr, the raw material M is sublimated to grow a single crystal.

On the other hand, during the first heating step in which the crucible 10 is heated by the first heating means 31, a horizontal temperature deviation occurs in the crucible 10, resulting in non-uniform sublimation of the raw material M and an ingot with a convex center In order to prevent the growth of low-quality single crystals, as a technical feature of the present invention, the second heating step (S40) and the third heating step (S50) of additionally heating the crucible 10 are performed.

In the second heating step (S40) and the third heating step (S50), in the process of heating the crucible 10 by the high frequency induction coil, which is the first heating means 31, the second heating means 32 and the third heating means 32 are used. A step of additionally heating the crucible 10 by each graphite plate as the heating means 33 may be included.

At this time, each of the graphite plates of the second heating means 32 and the third heating means 33 is configured to heat the crucible 10 with resistance by supplying current, preferably the third disposed in the center of the crucible 10 Since the heating means 33 is configured to have a higher degree of heating than the second heating means 32 disposed on the outer portion of the crucible 10, the central part maintaining a relatively low temperature in the crucible 10 is further heated. To reduce the horizontal temperature deviation of the crucible (10).

As a result, the crucible 10 is additionally heated by the second heating means 32 and the third heating means 33 that generate resistance heating at the bottom of the crucible 10 and also make higher resistance heating toward the center. Accordingly, as uniform sublimation of the crucible 10 is possible, a flat ingot having a non-convex center can be made and a high-quality single crystal can be realized.

In addition, it is possible to solve the problem that the yield of the ingot is lowered due to the raw material (M) powder that is not sublimated due to the low central temperature, and as a result, delay in the process time for growing a large-diameter single crystal can be prevented.

5 is a diagram in which the temperature distribution of the entire crucible is calculated using simulation, and the inner line of the crucible is a contour line representing the temperature gradient.

From FIG. 5a to FIG. 5c, it can be seen that the horizontal temperature gradient is improved in both the raw material portion of the lower portion of the crucible and the seed crystal portion of the upper portion of the crucible. This indicates that the horizontal temperature deviation can be reduced by using the second heating means and the third heating means.

Here, the horizontal temperature gradient of the lower part of the raw material is preferably 0.5 ° C / cm to 1.5 ° C / cm. If it is greater than 1.5 ° C / cm, uniform sublimation of the center and the outer portion is impossible, and if it is smaller than 0.5 ° C / cm, the sublimation efficiency decreases.

The temperature gradient of seed definition is preferably 0.1 ° C / cm to 0.3 ° C / cm. When it is greater than 0.3 ° C./cm, the stress of the ingot increases and cracks may occur, and when it is smaller than 0.1 ° C./cm, it is difficult to obtain a convex ingot shape.

6 is a photograph of a raw material powder cut into a longitudinal section after a single crystal growth experiment based on the above simulation. As shown in FIGS. 6A to 6C , it can be seen that the horizontal temperature gradient is improved from left to right.

The temperature gradient can be observed with the naked eye, and it can be seen that the boundary line between the unreacted raw material powder and the reacted carbon material (ash) is greatly bent in the case of FIG. can be confirmed to be maintained.

In addition, it can be seen that the shape of the unreacted powder by heat flux is large and non-uniform on the left side and small and uniform toward the right side.

Meanwhile, the temperature gradient can be inferred by looking at the shape of the grown single crystal ingot. For example, if the horizontal temperature deviation is large, the shape will be convex or concave, and if the deviation is small, it will have a flat shape.

In the case of a curvature k value, it is preferable to have a range of 0.15 to 0.25. If it is larger than 0.25, the shape of the ingot is too convex, and the quality is deteriorated due to stress. If it is smaller than 0.15, defects such as polytype intrusion and LAGB may be generated.

Preferably, through the large-diameter single crystal growth method as described above, when the raw material (M) is silicon carbide (SiC), the crystal polytype is 6H-SiC (6H-type silicon carbide) or 4H-SiC (4H type silicon carbide) single crystals can be grown. For reference, silicon carbide has various crystal polymorphs, and is called 3C-SiC, 4H-SiC, 6H-SiC, 15R-SiC, etc. to distinguish them. At this time, the number in front of SiC (silicon carbide) indicates the stacking cycle, which is caused by the different stacking cycles in a specific crystal direction (0001 direction in the hexagonal axis). For example, in the case of 3C-SiC, three layers are one layer. It becomes a unit and is repeated periodically, and consists of 4 layers in the case of 4H-SiC and 6 layers in the case of 6H-SiC. In addition, the English word in front of SiC (silicon carbide) means crystal estimation, C means cubic, H means hexagonal, and R means rhombohedral.

Although the embodiments of the present invention have been described with reference to the accompanying drawings, those skilled in the art to which the present invention pertains will realize that the present invention can be implemented in other specific forms without changing the technical spirit or essential features. You will understand. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive.

1... large-diameter single crystal growth device
10... crucible
20... quartz tube
30... Heating means
31... first heating means
32... Second heating means
33... third heating means
40... control part
M... raw material
S... seed tablets

Claims (10)

A crucible into which raw materials are charged;
a quartz tube with upper and lower parts open surrounding the crucible;
a first heating means surrounding the quartz tube;
a second heating means disposed around the lower circumference of the crucible within the quartz tube; and
a third heating means disposed in the lower center of the crucible within the quartz tube;
including,
The first to third heating means operate independently to heat the crucible,
The crucible has an accommodation groove for accommodating the third heating means at a lower portion where the third heating means is disposed, and the lower part of the crucible has an asymmetrical structure in which the thickness of the center portion is smaller than the thickness of the outer portion,
The third heating means and the second heating means are spaced apart from each other at a predetermined interval so as to be thermally separated from each other,
The large-diameter single crystal growing device, characterized in that the third heating means is configured to have a higher degree of resistance heating than the second heating means.
delete According to claim 1,
The second heating means and the third heating means are graphite plates for resistance heating the crucible by supplying current, respectively.
According to claim 1,
The third heating means has a higher resistivity than the second heating means.
According to claim 1,
The second heating means has a through hole in the center, and the third heating means is disposed in the through hole in a structure that does not come into contact with the second heating means.
A crucible into which raw materials are charged;
a quartz tube with upper and lower parts open surrounding the crucible;
a first heating means surrounding the quartz tube;
a second heating means disposed around the lower circumference of the crucible within the quartz tube; and
a third heating means disposed in the lower center of the crucible within the quartz tube;
including,
The first to third heating means operate independently to heat the crucible,
An air gap is provided between the second heating means and the bottom of the crucible so that the second heating means is spaced apart from the lower surface of the crucible,
The third heating means is in contact with the lower surface of the crucible,
The third heating means and the second heating means are spaced apart from each other at a predetermined interval so as to be thermally separated from each other,
The large-diameter single crystal growing device, characterized in that the third heating means is configured to have a higher degree of resistance heating than the second heating means.
According to claim 6,
The crucible has a large-diameter single crystal growth apparatus, characterized in that the receiving groove for accommodating the third heating means in the lower portion where the third heating means is disposed.
A large-diameter single crystal growth method using the large-diameter single crystal growth apparatus according to claim 1 or 7,
attaching the seed crystals to the seed crystal holder;
arranging and fixing the seed crystal holder in an upper portion of a crucible into which a raw material is charged;
a first heating step of heating the crucible with a first heating means so that the raw material is sublimated and attached to the seed crystal to grow into a single crystal;
a second heating step of heating the crucible with a second heating means to block a horizontal temperature deviation of the crucible; and
And a third heating step of heating the crucible with a third heating means to block the horizontal temperature deviation of the crucible,
The method of growing a large-diameter single crystal, characterized in that the first to third heating means operate independently to heat the crucible.
According to claim 8,
The third heating means and the second heating means are spaced apart from each other at a predetermined interval so as to be thermally separated from each other,
The method of growing a large-diameter single crystal, characterized in that the third heating means is configured to have a higher degree of resistance heating than the second heating means.
According to claim 8,
When the raw material is silicon carbide (SiC), the crystal polytype is 6H-SiC (6H-type silicon carbide) or 4H-SiC (4H-type silicon carbide) single crystal, characterized in that grown as a large diameter single crystal growing method.

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