KR102465604B1 - Thinner composition - Google Patents

Abstract

The present invention relates to a thinner composition that can be used in a photolithography process during the manufacturing process of a semiconductor device, and more particularly, has excellent solubility in various photoresists, does not have a strong odor, prevents particle generation defects, and EBR surface. A thinner composition capable of suppressing a build-up phenomenon is provided.

Description

Thinner composition {Thinner composition}

The present invention relates to a thinner composition that can be used in a photolithography process during the manufacturing process of a semiconductor device, and more particularly, has excellent solubility in various photoresists, does not have a strong odor, prevents particle generation defects, and EBR surface. It relates to a thinner composition capable of suppressing a build-up phenomenon.

Photolithography is a process of implementing a pattern designed on a mask on a substrate. During the manufacturing process of a semiconductor device, a photosensitive film is formed on the substrate, the mask pattern is transferred through exposure and development, and then an etching process is used. It refers to a process of etching a substrate or lower film by using

Among them, the exposure process is very sensitive to contamination sources because it is implemented in a method of transferring a desired pattern by irradiating light of a short wavelength ultraviolet region to the photosensitive film. Photoresist residues or contaminants generated in the process of forming a photosensitive film may become a source of contamination in an exposure process, and thus need to be removed in advance. At this time, a thinner composition has been used in an edge bead removal (EBR) process.

Korean Patent Publication No. 10-1987-0004332 suggests a thinner composition containing a novolak resin and a naphthoquinonediazide enhancer. This thinner composition has very effective performance in treating photoresists, but recently developed material SOH ( A photoresist called spin on hard mask) has a problem of deterioration in performance and a problem of unpleasant odor to workers due to strong odor.

Korean Patent Publication No. 10-1998-0022379 suggests a method of spraying a thinner composition containing ethyl lactate and ethyl-3-ethoxypropionate through a nozzle. This composition effectively removes SOH photoresist, but , There is a problem in that the thinner composition permeates into the photoresist at the EBR treated end surface and causes the treated end surface to swell, providing a cause for particle generation in a subsequent process.

Korean Patent Publication No. 10-2013-0125029 suggests a thinner composition containing propylene glycol monomethyl ether acetate (PGMEA), methyl-2-hydroxyisobutyrate and 1-methoxypropanol, but resist reduce coating (RRC) Although the performance is excellent, there is a problem of poor compatibility with SOH photoresist, causing poor particle generation.

Accordingly, it has excellent solubility in various photoresists such as G-line photoresist, I-line photoresist, KrF photoresist, ArF photoresist, BARC photoresist, or SOH photoresist, but does not have a strong odor. , It is necessary to develop a thinner composition capable of preventing defective particle generation and suppressing the build-up phenomenon of EBR surfaces.

Korean Patent Publication No. 10-1987-0004332 (May 8, 1987) Korean Patent Publication No. 10-1998-0022379 (1998.07.06) Korean Patent Publication No. 10-2013-0125029 (2013.11.18)

An object of the present invention is to provide a thinner composition that has excellent solubility in various photoresists, does not have a severe odor, prevents particle generation defects, and can suppress EBR surface build-up.

The present invention relates to a thinner composition containing propylene glycol monomethyl ether acetate and propylene glycol monoethyl ether, wherein the weight ratio of propylene glycol monomethyl ether acetate to propylene glycol monoethyl ether is 20 to 80:80 to 20.

The present invention is a photoresist for G-line, photoresist for I-line, photoresist for KrF, photoresist for ArF, The solubility of the photoresist can be improved by providing appropriate penetrating power to various photoresists such as BARC photoresist or SOH photoresist, thereby effectively removing unnecessary photoresist applied to the edge or back side of the wafer. can be removed

In addition, by excluding compounds such as propylene glycol monomethyl ether, ethyl-3-ethoxypropionic acid, and methyl-2-hydroxyisobutyrate, which have been widely used as components of thinner compositions, but have severe odors and reduce workability, thinner Work efficiency can be improved by lowering the odor intensity of the composition.

In particular, it has the advantage of improving process reliability by suppressing the build-up of the EBR surface and the generation of a large amount of particles, which were caused when using the SOH photoresist.

1 is data obtained by measuring the build-up thickness using thinner compositions of Example 3, Comparative Example 3, and Comparative Example 5, respectively.

Hereinafter, a thinner composition according to the present invention will be described in detail. At this time, if there is no other definition in the technical terms and scientific terms used, they have meanings commonly understood by those of ordinary skill in the art to which this invention belongs, and will unnecessarily obscure the gist of the present invention in the following description. Descriptions of possible known functions and configurations are omitted.

The present invention provides a thinner composition that can be used for an edge bead removal (EBR) process, a reduced resist coating (RRC) process, and cleaning of contaminants on a photoresist among semiconductor device manufacturing processes.

More specifically, the thinner composition according to the present invention may be used to remove photoresist unnecessarily applied to the edge or back surface of the wafer during the EBR process. Alternatively, during the RRC process, after applying the thinner composition on the wafer, the photoresist composition may be applied before volatilization of the thinner composition, so that even a small amount of the photoresist composition may have excellent coating properties.

Existing thinner compositions used in the EBR process have poor removal performance for SOH (spin on hard mask) photoresist, a recently developed material, or poor compatibility with SOH photoresist, resulting in poor particle generation. . In addition, there is a problem in that the thinner composition permeates into the photoresist on the EBR treated end face and the treated end face swells, thereby providing a cause for particle generation in the subsequent process, and causing severe odor to the operator. There was a problem.

Accordingly, the present inventors have developed various photoresists such as G-line photoresist, I-line photoresist, KrF photoresist, ArF photoresist, BARC (bottom antireflection coating) photoresist, or SOH (spin on hard mask) photoresist. After repeated research on a thinner composition that has excellent photoresist solubility, does not have a strong odor, prevents particle generation defects, and can suppress high build-up on the EBR surface, two specific types of compounds are titrated. The present invention has been completed by finding that the above object can be achieved when mixed in a proportion and used as a thinner composition.

Specifically, the thinner composition according to one embodiment of the present invention contains propylene glycol monomethyl ether acetate and propylene glycol monoethyl ether, and the weight ratio of the propylene glycol monomethyl ether acetate : propylene glycol monoethyl ether is 20 to 80 : 80 to 20 days.

In this way, by mixing propylene glycol monomethyl ether acetate and propylene glycol monoethyl ether in an appropriate ratio and using them as a thinner composition, photoresist for G-line, photoresist for I-line, photoresist for KrF, photoresist for ArF, BARC or It shows suitable solvency for various photoresists such as SOH, and accordingly, it is possible to effectively remove photoresist unnecessarily applied to the edge or back surface of the wafer.

In addition, by excluding compounds such as propylene glycol monomethyl ether, ethyl-3-ethoxypropionic acid, and methyl-2-hydroxyisobutyrate, which have been widely used as components of thinner compositions but have severe odors and reduce workability, thinner Work efficiency can be improved by lowering the odor intensity of the composition. In addition, process reliability can be improved by suppressing the build-up of the EBR surface and the generation of a large amount of particles, which were caused when the SOH photoresist was used. In this case, the EBR surface may mean a treated surface of a photoresist treated with a thinner composition.

More preferably, in the thinner composition according to one embodiment of the present invention, the weight ratio of propylene glycol monomethyl ether acetate to propylene glycol monoethyl ether may be 40 to 80:60 to 20, more preferably 40 to 60:60 to 40 can be Within this range, the odor intensity of the thinner composition can be further reduced, and the build-up of the EBR surface can be further suppressed.

Meanwhile, the thinner composition according to one embodiment of the present invention effectively treats various photoresists such as G-line photoresist, I-line photoresist, KrF photoresist, ArF photoresist, BARC photoresist, or SOH photoresist. Although it can be dissolved, it has excellent solvency especially for SOH photoresist and can have a maximized build-up improvement effect. That is, the thinner composition according to the present invention may be particularly preferably used for spin-on hard mask (SOH) resists.

Specifically, the thinner composition according to one embodiment of the present invention may have excellent solubility in a photoresist by using a mixture of propylene glycol monomethyl ether acetate and propylene glycol monoethyl ether in an appropriate ratio. More specifically, the thinner composition according to the present invention may have a dissolution rate of 100 nm/sec or more. In this case, nm/sec may mean the thickness of the resist film removed per second. By having such excellent solubility, it is possible to cleanly remove the photoresist unnecessarily applied to the edge or back surface of the wafer within a short period of time, thereby improving process efficiency. At this time, the upper limit of the dissolution rate is not particularly limited, but may be, for example, 300 nm/sec or less. More preferably, the thinner composition may have a dissolution rate of 150 to 200 nm/sec. In this range, the solubility of the photoresist is more excellent, so that the photoresist applied to unnecessary parts can be completely removed, and the reliability of the manufactured device can be improved by preventing damage to the photoresist area that should not be removed. can

In addition, the thinner composition according to one embodiment of the present invention can greatly reduce the odor intensity by mixing propylene glycol monomethyl ether acetate and propylene glycol monoethyl ether in an appropriate ratio. In detail, the thinner composition according to the present invention may have an odor intensity of 500 or less as measured by an odor measurer, and the odor measure may measure odor intensity in a range of 0 to 9999. By having such a low odor intensity, work efficiency can be improved, and symptoms such as discomfort, headache, and upset stomach caused by a bad smell can be prevented. At this time, the lower limit of the odor intensity is not particularly limited, but may be 100 or more. In addition, the odor intensity is measured using an odor measuring instrument, XP-329, and a relative value is assigned according to the degree of odor, and the odor intensity is measured on a scale of 0 to 9999. That is, if there is little odor such as water, it may be displayed as 0, and if it has a very unpleasant odor, it may be displayed as 9999.

In addition, the thinner composition according to one embodiment of the present invention can suppress the build-up phenomenon by using a mixture of propylene glycol monomethyl ether acetate and propylene glycol monoethyl ether in an appropriate ratio. In detail, the thinner composition according to the present invention may satisfy the following relational expression 1.

[Relationship 1]

T ₁ /T ₀ < 2.5

(In the relational expression 1, T ₀ is the thickness (nm) of the photoresist before the EBR process, and T ₁ is the thickness (nm) of the edge of the photoresist after the EBR process.)

As the build-up of the photoresist at the edge of the wafer can be suppressed in this way, the usable wafer area can be expanded, and the number of chips that can be manufactured from one wafer can be increased to improve the manufacturing yield. . At this time, the lower limit of T ₁ /T ₀ is not particularly limited, but may be preferably 1 or more, and may be substantially 1.5 or more. In addition, the build-up thickness can be measured through a conventional EBR performance evaluation method. In one embodiment, after applying a resist on a substrate, spraying a thinner composition for 5 seconds using a nozzle, measuring thickness such as alpha step It may be measured using a device.

In addition, the thinner composition according to one embodiment of the present invention can suppress defective particle generation by using a mixture of propylene glycol monomethyl ether acetate and propylene glycol monoethyl ether in an appropriate ratio. In detail, the thinner composition according to the present invention may satisfy the following relational expression 2.

[Relationship 2]

A ₂ - A ₁ ≤ 100

(In the above relational expression 2, A ₁ is the number of particles (pcs/ml) immediately after mixing the photoresist with the thinner composition, and A ₂ is the number of particles after 24 hours (pcs/ml) after mixing the resist with the thinner composition At this time, the mixing ratio of the thinner composition:photoresist is 99:1 (weight ratio), and the particles are calculated based on having a particle diameter of 100 nm or more.)

That is, when using the thinner composition according to the present invention, the number of particles generated per ml can be significantly reduced. From this, it is possible to improve the reliability of the device manufactured by preventing device defects in the process.

In particular, since the thinner composition according to one embodiment of the present invention has excellent compatibility with SOH resist, when the SOH photoresist and the thinner composition come into contact, aggregation of particles can be minimized. In detail, when the thinner composition according to one embodiment of the present invention is applied to the SOH resist, A ₂ - A ₁ may be 30 to 50 (units/ml).

In addition, the thinner composition according to one embodiment of the present invention may have appropriate volatility. Specifically, the thinner composition according to the present invention may have a volatilization time of 15 to 18 seconds, and within this range, it is possible to effectively remove unnecessary applied photoresist and suppress the build-up of the EBR surface. And it is possible to prevent the generation of stains on the edge of the wafer.

Meanwhile, the thinner composition according to one embodiment of the present invention may further include 0.001 to 0.1 parts by weight of a surfactant based on 100 parts by weight of the thinner composition. As such, by further adding a small amount of surfactant to the thinner composition, it is possible to further suppress the build-up phenomenon of the EBR surface while maintaining the photoresist dissolving properties of the thinner composition, and further lower the odor intensity.

In one example of the present invention, the surfactant may be a fluorine-based surfactant. Since the fluorine-based surfactant is a surfactant containing a fluorine group in the molecule and has a relatively low surface tension compared to hydrocarbon-based or silicon-based surfactants, it is possible to make the thinner composition wet the photoresist better when applied to the photoresist. .

As a specific example, the fluorine-based surfactant may be any one or two or more selected from anionic fluorine-based surfactants and nonionic fluorine-based surfactants. Anionic fluorine-based surfactants have not only fluorine but also anionic functional groups in surfactant molecules, such as DIC (DaiNippon Ink & Chemicals)'s Megaface F-114, F-410, F-510, F-511, AGC Semichemical's It may be any one or two or more selected from Surflon S-111, S-113, and S-211, and the nonionic fluorine-based surfactant is DIC (DaiNippon Ink & Chemicals) Megaface F-251, F-281, F-430, F-444, F-477, F-552, F-555, F-560, F-561, F-562, F-563, F-565, F-568, F-570, F-571, R- 40, R-41, R-43, R-94, RS-55, Rs-56, RS-72-K, RS-75, RS-90, Surflon S-141, S-145 from AGC Semichemical, Any one or two or more selected from S-241, S-242, S-243, S-420, S-611, S-651 and S-385 may be selected, but this is only an example. The fluorine-based surfactant according to the invention is not necessarily limited thereto.

Hereinafter, the thinner composition according to the present invention will be described in more detail through examples. However, the following examples are only one reference for explaining the present invention in detail, but the present invention is not limited thereto, and may be implemented in various forms.

Also, unless defined otherwise, all technical and scientific terms have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description herein is merely to effectively describe specific embodiments and is not intended to limit the present invention. In addition, the unit of additives not specifically described in the specification may be % by weight.

[Examples 1 to 7 and Comparative Examples 1 to 10]

As shown in Table 1 below, a thinner composition was prepared by mixing each compound, and the content unit of each compound is parts by weight.

PGMEA PGEE PGME PGPE EEP EL GBL HBM additive Example 1 80 20 Example 2 70 30 Example 3 60 40 Example 4 50 50 Example 5 40 60 Example 6 70 30 0.01 Example 7 50 50 0.01 Comparative Example 1 90 10 Comparative Example 2 10 90 Comparative Example 3 30 70 Comparative Example 4 30 70 Comparative Example 5 60 30 10 Comparative Example 6 50 20 30 Comparative Example 7 40 60 Comparative Example 8 50 50 Comparative Example 9 40 60 Comparative Example 10 50 20 30

(PGMEA: propylene glycol monomethyl ether acetate

PGEE: propylene glycol monoethyl ether

PGME: propylene glycol monomethyl ether

PGPE: propylene glycol monopropyl ether

EEP: ethyl-3-ethoxypropionate

EL: ethyl lactate

GBL: gamma-butyrolactone

HBM: methyl-2-hydroxyisobutyrate

Additive: Surfactant (Megaface F-444, DIC Co.))

[Attribute evaluation]

In order to evaluate the properties of each of the thinner compositions of Examples 1 to 7 and Comparative Examples 1 to 10, photoresists (PR) shown in Table 2 were used.

division Resist type Used Thickness (Å) PR 1 PR for I-line 20000 PR 2 PR for KrF 8000 PR 3 PR for ArF 3500 PR 4 BARC PR 300 PR 5 SOH PR 900

One) build up Inhibition performance evaluation

After spin-coating PR 5 on a 12-inch wafer, the thinner compositions prepared in Examples 1 to 7 and Comparative Examples 1 to 10 were sprayed on PR 5 rotating at 1500 rpm for 5 seconds to form EBR (edge bead) removal) process was performed.

At this time, the thinner composition was sprayed using a nozzle having an inner diameter of 0.3 mm on the edge of the wafer coated with photoresist, and the separation distance between the photoresist film and the nozzle was adjusted to 1 mm.

Then, the build-up thickness of the EBR surface was measured using an alpha step (KAL tensor Alpha step IQ). The thickness of 25 areas was measured by dividing the circumference of the wafer into 25 equal parts, and the thickness of a total of about 1200 points was measured in a method of measuring 50 times at intervals of 0.02 μm from the edge of the wafer to the EBR surface per area, and then the highest The thickness of the value is indicated in Table 3. At this time, the build-up thickness may be measured by rotating the wafer counterclockwise instead of clockwise.

In addition, the degree of thickness increase was calculated by dividing the build-up thickness (T ₁ ) after the EBR process by the thickness of the photoresist (T ₀ , 900 Å) before the EBR process.

PR 5 build-up thickness
(T ₁ , Å) degree of thickness increase
(T ₁ /T ₀ , %) Example 1 1980 2.20 Example 2 1880 2.09 Example 3 1805 2.01 Example 4 1770 1.97 Example 5 1690 1.88 Example 6 1580 1.76 Example 7 1590 1.77 Comparative Example 1 9345 10.38 Comparative Example 2 8825 9.8 Comparative Example 3 8230 9.14 Comparative Example 4 15420 17.13 Comparative Example 5 12920 14.36 Comparative Example 6 5840 6.49 Comparative Example 7 5020 5.58 Comparative Example 8 7730 8.59 Comparative Example 9 9150 10.17 Comparative Example 10 4730 5.26

As shown in Table 3, when the thinner compositions of Examples 1 to 7 according to the present invention are used, the build-up thickness has a value of 2000 Å or less, preferably 1800 Å or less, showing excellent build-up suppression performance, while comparison The thinner compositions according to Examples 1 to 10 had a high build-up thickness of 4500 Å or more, and thus showed unsatisfactory results compared to the thinner compositions of Examples.

In particular, in the case of Comparative Examples 1 and 2, even though the thinner composition having the same configuration as the present invention was used, the build-up thickness was measured as very high as 9000 Å or more as the mixing ratio was out of 20 to 80:80 to 20. From this, it was confirmed that mixing propylene glycol monomethyl ether acetate and propylene glycol monoethyl ether in an appropriate ratio is a very important factor in suppressing the build-up phenomenon of the EBR surface.

2) Evaluation of volatilization time and odor intensity

In order to specify the volatility of the thinner compositions of Examples 1 to 7 and Comparative Examples 1 to 10, a wafer was fixed on a spin coater, an equal amount of each thinner composition was dispersed on the wafer, and then rotated at 1000 rpm, The time required to completely remove the thinner composition from the wafer was visually confirmed and the time was indicated in Table 4 below.

In addition, in order to measure the smell of the thinner compositions of Examples 1 to 7 and Comparative Examples 1 to 10, an electronic nose type odor measurer, XP-329, was used in real-time monitoring mode at a distance of 30 cm from the spin coater to measure the saturation odor intensity. was measured and the values were indicated in Table 5 below. The measurement range of the smell meter has a value between 0000 and 9999 levels.

Time to complete volatilization (sec) Conversion value based on nBA=1 (25℃) odor intensity
(0-9999) Example 1 17.28 0.60 496 Example 2 16.80 0.61 475 Example 3 16.25 0.62 443 Example 4 15.68 0.63 408 Example 5 15.27 0.64 394 Example 6 16.91 0.61 469 Example 7 15.85 0.63 402 Comparative Example 1 18.05 0.59 475 Comparative Example 2 18.95 0.61 414 Comparative Example 3 13.29 0.68 1464 Comparative Example 4 26.87 0.44 479 Comparative Example 5 34.75 0.34 425 Comparative Example 6 18.42 0.58 536 Comparative Example 7 22.34 0.51 578 Comparative Example 8 28.88 0.41 896 Comparative Example 9 32.72 0.36 497 Comparative Example 10 19.24 0.56 536

(nBA = n-butyl acetate)

As shown in Table 4, it can be seen that the thinner compositions of Examples 1 to 7 according to the present invention have a volatilization time in the range of 15 to 18 seconds and an odor intensity in the range of 500 or less. In the case of odor intensity, in the case of a composition composed of the same composition, the odor intensity increases according to the volatilization, but when the composition is different, the odor strength is different depending on the type of composition. In addition, in the case of the thinner compositions of Comparative Examples 1 to 10, both the desirable volatilization time range and odor strength were not satisfied.

3) Evaluation of dissolution rate

Using the thinner compositions of Examples 1 to 7 and Comparative Examples 1 to 108, dissolution rates of the five photoresists in Table 2 were evaluated.

After applying each of the five photoresists on a 6-inch wafer using an ARM 800EUV (Litho Tech Japan) machine, the soft baking process (100/90 seconds) was completed, and the entire surface was coated in each thinner composition without exposure. was measured. In the case of BARC, the dissolution rate was measured while developing the entire surface in each thinner composition without heat treatment after application. The results are shown in Table 5 below.

PR 1 PR 2 PR 3 PR 4 PR 5 Example 1 ○ ○ ○ ○ ○ Example 2 ◎ ◎ ◎ ◎ ◎ Example 3 ◎ ◎ ◎ ◎ ◎ Example 4 ◎ ◎ ◎ ◎ ◎ Example 5 ◎ ◎ ◎ ◎ ◎ Example 6 ◎ ◎ ◎ ◎ ◎ Example 7 ◎ ◎ ◎ ◎ ◎ Comparative Example 1 ○ ○ △ △ X Comparative Example 2 ○ ○ ○ ○ △ Comparative Example 3 ◎ ◎ ◎ ◎ ◎ Comparative Example 4 ○ ○ △ △ X Comparative Example 5 ◎ ◎ ○ ○ △ Comparative Example 6 ◎ ◎ ○ ○ X Comparative Example 7 △ △ ○ ○ △ Comparative Example 8 ◎ ◎ △ △ ○ Comparative Example 9 △ △ X X X Comparative Example 10 ◎ ◎ ◎ ◎ X

(◎: When the dissolution rate is 150 nm/sec or more.

○: When the dissolution rate is 100 nm/sec or more and less than 150 nm/sec.

△: When the dissolution rate is 50 nm/sec or more and less than 100 nm/sec.

X: When the dissolution rate is less than 50 nm/sec.)

As shown in Table 5, the thinner compositions of Examples 1 to 7 showed excellent dissolution rates of 100 nm/sec or more in all photoresists, but the thinner compositions of Comparative Examples 1, 2 and 4 to 10 The dissolution rates for all were not good. In the case of Comparative Example 3, although it had excellent dissolution rates for each resist, unsatisfactory results were obtained compared to the thinner compositions of Examples in the evaluation of build-up performance.

4) Evaluation of particle increase amount

Stability to SOH photoresists was evaluated using the thinner compositions of Examples 1 to 7 and Comparative Examples 1 to 10. Each thinner composition: SOH photoresist composition was mixed at a weight ratio of 99:1, and then the amount of increase in particles having a particle diameter of 100 nm or more was measured using a liquid particle counter of the thinner composition.

As for the measurement time, the increased amount of particles was measured immediately after mixing the composition for SOH photoresist and after 24 hours. From this, when the thinner composition and the SOH photoresist are mixed, the aggregation of the SOH components can be observed, and through this, the stability of the thinner composition to the SOH photoresist is confirmed. At this time, the thinner composition immediately before incorporation of the SOH photoresist composition was evaluated after setting the number of particles having a particle diameter of 100 nm or more in the composition to 1.0 ± 0.2 or less. In addition, it was confirmed that immediately after mixing the composition for SOH photoresist, all thinner compositions had the number of particles within 10 to 30 silver. Next, the amount of increase in particles was measured after 24 hours, and the results are shown in Table 6. At this time, the measurement unit is piece/ml, and the particle increase amount is the particle amount after 24 hours-particle amount immediately after mixing.

PR 1 PR 2 PR 3 PR 4 PR 5 Example 1 ○ ○ ◎ ◎ ◎ Example 2 ○ ◎ ◎ ◎ ◎ Example 3 ◎ ◎ ◎ ◎ ◎ Example 4 ◎ ◎ ◎ ◎ ◎ Example 5 ◎ ◎ ◎ ◎ ◎ Example 6 ◎ ◎ ◎ ◎ ◎ Example 7 ◎ ◎ ◎ ◎ ◎ Comparative Example 1 ◎ ◎ ◎ ◎ △ Comparative Example 2 ○ ○ ○ ○ ○ Comparative Example 3 ◎ ◎ △ ○ △ Comparative Example 4 △ ○ ○ ○ ◎ Comparative Example 5 ◎ ◎ ◎ ◎ ○ Comparative Example 6 ◎ ◎ ◎ ○ X Comparative Example 7 ○ ○ ○ ○ ○ Comparative Example 8 ◎ ◎ ◎ ◎ ○ Comparative Example 9 △ △ △ △ ○ Comparative Example 10 ◎ ◎ ○ ○ X

(◎: Increase 30~50 / ○: Increase 50~100 / △: Increase 100~150 / X: Increase 150 or more)

As shown in Table 6, the use of the thinner compositions according to Examples 1 to 7 produced 30 to 50 particles, showing excellent stability performance, whereas the thinner compositions according to Comparative Examples 1 to 10 More particles were produced compared to the example thinner composition, resulting in unsatisfactory results. In particular, in the case of Comparative Examples 6 and 10, a precipitation reaction occurred immediately upon contact with the SOH photoresist composition, and the liquid particle counter measurement was impossible.

Although the present invention has been described through specific details and limited examples as described above, this is only provided to help a more general understanding of the present invention, the present invention is not limited to the above examples, and the present invention belongs Various modifications and variations from these descriptions are possible to those skilled in the art.

Therefore, the spirit of the present invention should not be limited to the described embodiments, and it will be said that not only the claims to be described later, but also all modifications equivalent or equivalent to these claims belong to the scope of the present invention. .

Claims (4)

A thinner composition comprising propylene glycol monomethyl ether acetate and propylene glycol monoethyl ether, wherein the weight ratio of propylene glycol monomethyl ether acetate to propylene glycol monoethyl ether is 20 to 80:80 to 20.
According to claim 1,
The thinner composition is for a spin-on hard mask (SOH) resist.
According to claim 1,
The thinner composition further comprises 0.001 to 0.1 parts by weight of a surfactant based on 100 parts by weight of the thinner composition.
According to claim 3,
The surfactant is a fluorine-based surfactant thinner composition.

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