KR102462994B1 - Light emittng device and light emitting device package including the same - Google Patents

Abstract

The embodiment includes a base layer made of a first conductivity type semiconductor layer; a mask selectively disposed on the base layer; and a plurality of light emitting structures selectively disposed on the base layer between the masks, including the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer, and having a height and width of a nanoscale It provides a light emitting device comprising a.

Description

A light emitting device and a light emitting device package including the same

The embodiment relates to a light emitting device and a light emitting device package including the same.

Group 3-5 compound semiconductors, such as GaN and AlGaN, are widely used in optoelectronics and electronic devices due to their many advantages, such as wide and easily tunable band gap energy.

In particular, light emitting devices such as light emitting diodes or laser diodes using group 3-5 or group 2-6 compound semiconductor materials of semiconductors are developed in thin film growth technology and device materials such as red, green, blue, and ultraviolet light. Various colors can be realized, and efficient white light can be realized by using fluorescent materials or combining colors. It has the advantage of being friendly.

Accordingly, a light emitting diode backlight that replaces a Cold Cathode Fluorescence Lamp (CCFL) constituting a transmission module of an optical communication means, a backlight of a Liquid Crystal Display (LCD) display device, and white light emission that can replace a fluorescent lamp or incandescent light bulb Applications are expanding to diode lighting devices, automobile headlights and traffic lights.

1 is a view showing a conventional light emitting device.

The conventional light emitting device 100 includes a light emitting structure 120 including a first conductivity type semiconductor layer 122 , an active layer 124 , and a second conductivity type semiconductor layer 126 on a substrate 110 made of sapphire or the like. formed, and a first electrode 162 and a second electrode 166 are disposed on the first conductivity-type semiconductor layer 122 and the second conductivity-type semiconductor layer 126 , respectively.

In the light emitting device 100 , electrons injected through the first conductivity type semiconductor layer 122 and holes injected through the second conductivity type semiconductor layer 126 meet each other to form an active layer 124 in an energy band unique to the material. It emits light with an energy determined by The light emitted from the active layer 124 may vary depending on the composition of the material constituting the active layer 124 , and may be blue light, ultraviolet (UV) light, deep ultraviolet (Deep UV) light, or light in another wavelength region.

The active layer 124 may have a double junction structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum wire (Quantum-Wire) structure, a quantum dot structure, or the like. can be formed with

The above-described conventional light emitting device has the following problems.

Since the substrate and the light emitting structure are different materials, the lattice constant mismatch is very large and the difference in the coefficient of thermal expansion therebetween is also very large, so dislocation, melt-back, cracks that deteriorate crystallinity Cracks, pits, and surface morphology defects may occur.

A buffer layer may be formed between the substrate 110 and the light emitting structure 120 to solve the above-described problem, but dislocations may still be formed to deteriorate the quality of the light emitting structure.

Due to the above-described crystal defects, light energy emitted from the active layer is converted into thermal energy and emitted to the outside, thereby reducing light efficiency.

In order to solve the above-described problem, the light emitting device of FIG. 2 has been proposed.

In the light emitting device 200 of FIG. 2 , the light emitting structure 220 is disposed in a nano rod shape. An active layer 224 and a second conductivity-type semiconductor layer 226 are grown around the first conductivity-type semiconductor layer 222 partially grown through the mask layer 250 , and a light-transmitting layer is formed between the respective nanorods. The conductive layer 236 is filled, and the first electrode 262 and the second electrode 266 are respectively disposed on the light-transmitting conductive layer 236 .

In addition, a phosphor may be disposed around the light emitting device 200 to change the wavelength of light emitted from the light emitting device 200 .

In the light emitting device 200 of FIG. 2 , the light emitting structure 220 is grown in the shape of a nanorod, so that the above-described generation of dislocations and the like can be reduced.

However, the conventional nanorod-shaped light emitting structure 220 may reduce crystal defects such as dislocations, but the nanorod-shaped light emitting structure having a nano-scale diameter may be damaged by an external force. In particular, when the light emitting device 200 of FIG. 2 is used in a flexible display device, an external force due to bending of the light emitting device 200 may affect the light emitting structure 220 .

Embodiments are intended to provide a light emitting device that reduces crystal defects such as dislocations in the growth of a light emitting structure and has an external configuration with respect to an external force when used in a flexible display device.

The embodiment includes a base layer made of a first conductivity type semiconductor layer; a mask selectively disposed on the base layer; and a plurality of light emitting structures selectively disposed on the base layer between the masks, including the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer, and having a height and width of a nanoscale It provides a light emitting device comprising a.

A light-transmitting conductive layer may be disposed on a surface of at least a portion of a plurality of light-emitting structures constituting the light-emitting structure.

The light-transmitting conductive layer may be disposed to have a constant thickness.

The surface of the light-transmitting conductive layer may form a pattern.

A reflective layer disposed on the light-transmitting conductive layer may be included.

The reflective layer may be disposed to have a constant thickness.

The surface of the reflective layer may be patterned.

The surface of the reflective layer may be flat.

It may further include a first passivation layer and a second passivation layer sequentially disposed on a side surface of the base layer, wherein the first passivation layer and the second passivation layer may be disposed on a portion of an upper surface of the base layer.

On the upper surface of the base layer, the first passivation layer may be disposed in contact with the light-transmitting conductive layer, and the second passivation layer may be disposed in contact with the first passivation layer.

It further includes a first electrode disposed on the base layer and a second electrode disposed on the reflective layer, wherein a lower surface of the second electrode may contact the reflective layer and the second passivation layer, respectively.

A lower surface of the second electrode may form a pattern.

An upper surface of the second passivation layer may be flat in an upper region of the light emitting structure.

The lower surface of the second electrode may be disposed to form a step difference.

Another embodiment is a flexible circuit board; the above-described light emitting device disposed by flip-chip bonding on the flexible circuit board; and a conductive adhesive for electrically contacting the first conductive layer and the second conductive layer of the circuit board to the first electrode and the second electrode of the light emitting device, respectively.

The conductive adhesive may include a base material and a conductive ball, and the conductive ball may be compressed to electrically contact the first conductive layer and the second conductive layer of the circuit board to the first electrode and the second electrode of the light emitting device, respectively. .

In the light emitting device according to the embodiments, a light emitting structure arranged in a nano-scale shape such as a pyramid is disposed on a nano-scale or micro-scale base layer. It may not be damaged and may be used in devices that require precision due to the miniaturized size of the light emitting device.

1 and 2 are views showing a conventional light emitting device,
3a to 3n are views showing a manufacturing process of an embodiment of a light emitting device,
4A and 4B are views showing embodiments of a light emitting device,
5 is a view showing an embodiment of a display device in which a light emitting element is disposed;
6 is a view showing the light emitting device package of FIG. 5,
7 is a diagram illustrating various applications including a light emitting device.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention that can specifically realize the above objects will be described with reference to the accompanying drawings.

In the description of the embodiment according to the present invention, in the case where it is described as being formed on "on or under" of each element, on (above) or below (on) or under) includes both elements in which two elements are in direct contact with each other or one or more other elements are disposed between the two elements indirectly. In addition, when it is expressed as up (up) or down (on or under), it may include the meaning of not only an upward direction but also a downward direction based on one element.

3A to 3N are views illustrating a manufacturing process of an embodiment of a light emitting device.

As shown in FIG. 3A , a base layer 322a is grown on the substrate 310 , and a mask 350 is selectively disposed on the base layer 322a.

The substrate 310 may be formed of a material suitable for semiconductor material growth or a carrier wafer, may be formed of a material having excellent thermal conductivity, and may include a conductive substrate or an insulating substrate. For example, at least one of sapphire (Al ₂ O ₃ ), SiO ₂ , SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, and Ga ₂ 0 ₃ may be used.

The base layer 322a may be made of a material of a first conductivity type semiconductor layer 322b to be described later. The base layer 322a may be implemented with a group III-V or group II-VI compound semiconductor, and may be doped with a first conductivity type dopant.

The base layer 322a is a semiconductor material having a composition formula of Al _x In _y Ga _(1-xy) N (0≤x≤1, 0≤y≤1, 0≤x+y≤1), AlGaN, GaN, InAlGaN , AlGaAs, GaP, GaAs, GaAsP, may be formed of any one or more of AlGaInP.

When the base layer 322a is an n-type semiconductor layer, the first conductivity-type dopant may include an n-type dopant such as Si, Ge, Sn, Se, Te, or the like. The base layer 322a may be formed as a single layer or a multilayer, but is not limited thereto.

Fig. 3B is a top view of Fig. 3A;

In FIG. 3B , the base layer 322a is exposed in the a region, the mask 350 is disposed in the b region, and an open region c is formed on the mask 350 , and the base layer 322a is formed through the c region. can be exposed.

In FIG. 3B , the cross section of region c, which is the open region, is rectangular, and the open region may be formed in various shapes, such as a circle or a hexagon.

In FIG. 3C , the light emitting structure 320 is selectively grown on the base layer 322a through the open region between the masks 350 .

The light emitting structure 320 includes a first conductivity type semiconductor layer 322b , an active layer 324 , and a second conductivity type semiconductor layer 326 .

Although the base layer 322a and the first conductivity type semiconductor layer 322b are separated by a dotted line, there is a difference between growth before and after the disposition of the mask 350, but the first conductivity type semiconductor layer 322b is the base layer ( 322a) and may be made of the same material.

The active layer 324 is disposed between the first conductivity type semiconductor layer 322 and the second conductivity type semiconductor layer 326 , and has a single well structure, a multiple well structure, a single quantum well structure, and a multiple quantum well. It may include any one of a (MQW: Multi Quantum Well) structure, a quantum dot structure, or a quantum wire structure.

The active layer 324 is formed of a well layer and a barrier layer, for example, AlGaN/AlGaN, InGaN/GaN, InGaN/InGaN, AlGaN/GaN, InAlGaN/GaN, GaAs (InGaAs) using a III-V group element compound semiconductor material. /AlGaAs, GaP (InGaP) / may be formed of any one or more pair structure of AlGaP, but is not limited thereto.

The well layer may be formed of a material having an energy band gap smaller than that of the barrier layer. When the active layer 324 generates light of a deep UV wavelength, the active layer 324 may have a multi-quantum well structure, specifically Al _x Ga _(1-x) N (0<x< The pair structure of the quantum wall including 1) and the quantum well layer including Al _y Ga _(1-y) N (0<x<y<1) may be a multi-quantum well structure of 1 period or more, and the quantum well layer may include a dopant of a second conductivity type, which will be described later.

The second conductivity type semiconductor layer 326 may be formed of a semiconductor compound. The second conductivity-type semiconductor layer 326 may be implemented with a compound semiconductor such as a III-V group or a II-VI group, and may be doped with a second conductivity-type dopant. The second conductivity type semiconductor layer 326 is, for example, a semiconductor material having a composition formula of In _x Al _y Ga _{1 -xy} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1), AlGaN , GaN AlInN, AlGaAs, GaP, GaAs, GaAsP, may be formed of any one or more of AlGaInP, for example, the second conductivity type semiconductor layer 326 may be made of Al _x Ga _(1-x) N.

When the second conductivity-type semiconductor layer 326 is a p-type semiconductor layer, the second conductivity-type dopant may be a p-type dopant such as Mg, Zn, Ca, Sr, Ba, or the like. The second conductivity type semiconductor layer 326 may be formed as a single layer or a multilayer, but is not limited thereto.

Although not shown, an electron blocking layer may be disposed between the active layer 324 and the second conductivity type semiconductor layer 326 . The electron blocking layer may have a superlattice structure. In the superlattice, for example, AlGaN doped with a second conductivity type dopant may be disposed, and GaN having a different composition ratio of aluminum is formed as a layer. A plurality may be alternately disposed with each other.

The light emitting structure 320 is grown between the respective masks 350 , and the first conductivity type semiconductor layer 322 may be grown in a pyramid shape between the masks 350 , and the first conductivity type semiconductor layer ( An active layer 324 may be grown on the 322 , and a second conductivity-type semiconductor layer 326 may be grown on the active layer 324 .

In FIG. 3C , the length of the lower surface of the first conductivity-type semiconductor layer 322 may be greater than the distance d ₁ between the masks 350 , and the distance d ₁ between the masks 350 is shown in FIG. 3B . may be the length of one side of the open region (region c) of .

Although a pyramid-shaped light emitting structure is illustrated in FIG. 3D , it may be grown in a cylindrical shape or a polygonal pyramid. The shape of the light emitting structure may depend on growth conditions rather than the shape of the open region c between the masks 350 .

In FIG. 3D , the height h ₁ of the light emitting structure may be in a nano scale to a micro scale, and a length to a width of one side of the light emitting structure may also be in a nano scale to a micro scale.

In addition, each of the light emitting structures may be arranged irregularly in addition to the regular arrangement, and the size or shape of each of the protruding structures may be the same or different.

From FIG. 3E, a process after growth of a light emitting structure is shown. The shapes of the light emitting structure and the mask 350 are the same as those of FIG. 3C , but are briefly illustrated below in FIG. 3E .

In FIG. 3E , a light-transmitting conductive layer 330 is disposed on the surface of the light emitting structure and the base layer 322a. The light-transmitting conductive layer 330 may be disposed to have a predetermined thickness to form a pattern. The light-transmitting conductive layer 330 may smoothly supply current to the second conductivity-type semiconductor layer 326 , and may be made of, for example, indium tin oxide (ITO).

2 etching processes are shown in FIGS. 3F to 3G . The etching process of FIG. 3F is a process for securing a region in which the first electrode 362, which will be described later, is disposed, and may be referred to as a mesa etching process.

In the etching process of FIGS. 3F to 3G , the light emitting structure is selectively etched using masks 350a and 350b, respectively, and the widths of the masks 350a and 350b may be different from each other.

The etching process of FIG. 3G is a process for isolation of each light emitting device unit, and the light emitting structure grown at the wafer level may be separated into each device unit. In the device unit separation process, the side surface of the base layer 322a may be stepped, and as will be described later, the lower base layer 322a divided by the step may be removed after the manufacturing process of the light emitting device package.

The width w ₁ of one side of the light emitting structure in FIG. 3G may be 25 micrometers to 35 micrometers. The width w ₂ of one side of the base layer 322a may be about 41 micrometers, and the width w ₂ of one side of the substrate 310 after separation in units of devices may be about 45 micrometers.

As shown in FIG. 3H , a first passivation layer 340 is disposed on the light emitting structure on which the light-transmitting conductive layer 330 is disposed, and the base layer 322a. The passivation layer 340 may be formed of an insulating material, and the insulating material may be formed of a non-conductive oxide or nitride. As an example, the passivation layer 340 may include a silicon oxide (SiO ₂ ) layer, an oxynitride layer, and an aluminum oxide layer.

As illustrated in FIG. 3I , the first passivation layer 340 may be partially removed from the upper region of the light emitting structure.

In detail, the first passivation layer 340 may be removed so that all of the pyramid shapes constituting the light emitting structure in FIG. 3I may be exposed.

In FIG. 3J , the reflective layer 360 may be disposed in the region where the first passivation layer 340 is open in FIG. 3I , and the reflective layer 360 may have a predetermined thickness and form a pattern. The reflective layer 360 may be made of a material having a high reflectance, specifically, a metal, and more specifically, tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), silver (Ag). ), nickel (Ni), platinum (Pt), rhodium (Rh), or a metal layer including an alloy containing Al, Ag, Pt, or Rh.

Since the light emitting device to be completed may be disposed in a flip-chip type, in this case, light directed to the lower part of the light emitting device package may be reflected in the upper direction by the reflective layer 360 .

The reflective layer 360 is disposed on the entire region of the light emitting structure, and may be disposed to overlap some of the first passivation layer 340 in the vertical direction.

In FIG. 3K , a second passivation layer 370 may be disposed on the reflective layer 360 . The composition of the second passivation layer 370 may be the same as that of the first passivation layer 340 , and the upper surface of the reflective layer 360 and the first passivation layer 340 and the lower surface of the second passivation layer 370 are can be contacted

In FIG. 3L , at least two regions of the second passivation layer 370 may be opened. After the opening process of the second passivation layer 370 , the surface of the base layer 322a exposed in the above-described mesa etching process may be exposed, and at least a portion of the reflective layer 360 may be exposed. The reason for exposing the reflective layer 360 is to secure a region where the second electrode 366 and the reflective layer 360, which will be described later, will contact, so that only a part of the second passivation layer 370 on the reflective layer 360 is removed. can

A first passivation layer 340 and a second passivation layer 370 may be disposed on some surfaces of the mesa region, and a light-transmitting conductive layer 330 and a conductive layer 340 are disposed on the upper surface of the light emitting structure, and a light-transmitting conductive layer Layer 330 may be exposed.

A first passivation layer 340 , a reflective layer 360 , and a second passivation layer 370 may be sequentially stacked on the light-transmitting conductive layer 330 in some regions of the edge of the light emitting structure.

The contact electrode 380 may be disposed on at least a portion of the base layer 322a exposed in the mesa region in FIG. 3M . The contact electrode 380 is for improving electrical contact characteristics between the base layer 322a, which is a first conductivity type semiconductor layer, and a first electrode 362 to be described later, for example, indium tin oxide (ITO), IZO (indium tin oxide) indium zinc oxide), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO) , gallium zinc oxide (GZO), IZO Nitride (IZON), AGZO (Al-GaZnO), IGZO (In-GaZnO), ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx /Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt, Au, may be formed including at least one of Hf, such material not limited

3N , a first electrode 362 and a second electrode 362 may be respectively disposed on the contact electrode 380 and the reflective layer 360 .

Top surfaces of the first electrode 362 and the second electrode 366 may be disposed to be flat, thereby facilitating flip-chip bonding in the light emitting device package.

In FIG. 3N , the step region of the base layer 322a may be removed by a process such as laser lift off (LLO), and the above-described removal process may be performed after the flip chip bonding process of the light emitting device. The thickness t ₁ of the base layer 322a to be removed may be several micrometers, for example, 3 micrometers or less. have.

4A and 4B are diagrams illustrating embodiments of a light emitting device.

4A and 4B show the light emitting device 300 before the above-described laser lift-off process, and the composition of each layer may be the same as described above with reference to FIGS. 3A to 3N .

In the light emitting device 300 of FIG. 4A , a base layer 322a is disposed on a substrate 310 with a step difference, a mask (not shown) is selectively disposed on the base layer 322a, and between adjacent masks Light emitting structures are being placed. The height and width of each light emitting structure may be nanoscale or microscale.

The light emitting structure includes the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer as described above.

A light-transmitting conductive layer 330 may be disposed on the light emitting structure to improve current flow characteristics from the second electrode 366 to the second conductivity-type semiconductor layer.

A first passivation layer 340 is disposed on an upper surface and a side surface of the base layer 322a, the first passivation layer 340 being opened to expose at least a portion of the light-transmitting conductive layer 330 and also in the mesa region of the base It may be open to expose at least a portion of layer 322a.

A reflective layer 360 may be disposed on at least a portion of the surface of the light-transmitting conductive layer 330 exposed between the first passivation layers 340 . Since the light-transmitting conductive layer 330 and the reflective layer 360 are disposed to have a predetermined thickness on the upper portion of the light-emitting structure, the light-transmitting conductive layer 330 and the reflective layer 360 may be disposed in a pattern, and a second passivation layer (to be described later) ( 370) may also form a pattern in some areas.

The second passivation layer 370 is disposed on a partial region of a side surface and an upper surface of the base layer 322a, is open to expose at least a part of the reflective layer 360, and also at least a part of the base layer 322a in the mesa region. can be opened to expose

A contact electrode 380 may be disposed on the base layer 322a exposed in the mesa region, and a second electrode 366 may be disposed to cover at least a portion of the open reflective layer 360 . A first electrode 362 may be disposed to cover a portion of the contact electrode 380 and the base layer 322a and the second passivation layer 370 exposed in the mesa region.

The first passivation layer 340 and the second passivation layer 370 may be disposed on a side surface of the base layer 322a and may also be disposed on a portion of an upper surface of the base layer 322a. At this time, on the upper surface of the base layer 322a, the first passivation layer 340 is disposed in contact with the light-transmitting conductive layer 330 , and the second passivation layer 370 is disposed on the first passivation layer 340 . It can be placed in contact.

A lower surface of the second electrode 366 may contact the reflective layer 360 and the second passivation layer 370 , respectively, and a lower surface of the second electrode 366 may form a pattern. In addition, the upper surface of the second passivation layer 370 may be flat in the upper region of the light emitting structure.

The light emitting device 300 of FIG. 4B is the same as the embodiment of FIG. 4A , but the upper surface of the reflective layer 360 may be disposed to be flat. That is, the lower portion of the reflective layer 360 is arranged in a pattern, but the upper portion is flat, so that the thickness of the reflective layer 360 may not be constant.

And, as the upper surface of the reflective layer 360 is flat, the second passivation layer 370 also has a constant thickness, but unlike FIG. can

In addition, the lower surface of the second electrode 366 may also be disposed on the reflective layer 360 and the second passivation layer 370 in a flat shape, but may have a step difference as illustrated.

The light emitting device 300 of FIG. 4B has a flat upper surface compared to the embodiment of FIG. 4A , so that the flip chip bonding process may be easy.

5 is a diagram illustrating an embodiment of a display device in which a light emitting device is disposed.

The substrate 410 constituting the display device 400 may be a circuit board, for example, a flexible printed circuit board (FPCB). The substrate 410 may be electrically connected to the driving chip 420 disposed on one side.

The substrate 410 may be electrically connected to the light emitting pixel 440 through the conductive adhesive 430 . The conductive adhesive 430 may include, for example, a conductive ball. The light emitting pixel 440 may be an array of light emitting device packages including the above-described light emitting device.

In the light emitting pixel 440 , a plurality of light emitting devices may be arranged in rows and columns to form a pixel. For example, 400 and 1080 light emitters may be aligned in a horizontal direction and a vertical direction, respectively.

The phosphor 450 may be disposed on the light emitting pixel 440 in a plate shape, but may be omitted. That is, since light of different wavelength ranges may be emitted in each light emitting device package constituting the light emitting pixel 440 or a color filter 460 may be disposed, the phosphor 450 may be omitted.

A touch panel 470 may be disposed on the color filter 460 , for example, a capacitive touch panel may be disposed.

FIG. 6 is a view showing the light emitting device package of FIG. 5 .

In the light emitting device package, the light emitting device 300 may be flip chip bonded to the circuit board 410 through a conductive adhesive 430 . The first conductive layer 411 and the second conductive layer 412 of the circuit board 410 are electrically connected to the first electrode 362 and the second electrode 366 of the light emitting device 300 through a conductive adhesive, respectively. can

At this time, in the conductive adhesive 430 , conductive balls 432 are disposed in the base material 431 , and when the light emitting device 300 is pressed in the direction of the circuit board, the conductive balls 432 are first conductive of the circuit board 410 . The layer 411 and the second conductive layer 412 may be electrically connected to the first electrode 362 and the second electrode 366 of the light emitting device 300 , respectively.

In FIG. 6 , the upper region of the light emitting device 300 may be removed by the above-described laser lift-off process or the like.

The above-described display device 400 may be disposed in a thin film shape, and may be implemented as a flexible display device. At this time, when the display device 400 is curved, the light emitting pixels 300 on the circuit board 410 may also be bent. Even if 300 is bent, it is less likely to receive an impact from an external force and may not be damaged. In addition, due to the size of the miniaturized light emitting device, it can be used in a device requiring precision. For example, when a light emitting device having a size of 40 micrometers x 40 micrometers is used as a pixel, a resolution of 500 ppi can be realized.

7 is a diagram illustrating various applications including a light emitting device, for example, a smart watch 500 that is a wearable device.

The smart watch 500 may perform pairing with an external digital device, and the external digital device may be a digital device capable of communication connection with the smart watch 500, for example, the illustrated smart phone 510, a laptop ( 530), Internet Protocol Television (IPTV) 520, and the like.

The light emitting device 300 described above may be used as the light source of the smart watch 500, and may be worn on the wrist due to the flexibility of the FPCB, and fine pixels may be implemented due to the fine size of the light emitting device.

Other the above-described light emitting device may be used in an image display device and a lighting device. In this case, the size of the light emitting device can be miniaturized so that the size of the device can be miniaturized, and design restrictions can be reduced due to the characteristics of the light emitting device having flexibility.

In the above, the embodiment has been mainly described, but this is only an example and does not limit the present invention, and those of ordinary skill in the art to which the present invention pertains are not exemplified above in the range that does not depart from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be implemented by modification. And the differences related to these modifications and applications should be construed as being included in the scope of the present invention defined in the appended claims.

100, 200, 300: light emitting device 110, 210, 310: substrate
120: 220, 320: light emitting structure 162, 262, 362: first electrode
166, 266, 366: second electrode 322a: base layer
322: first conductivity type semiconductor layer 324: active layer
326: second conductivity type semiconductor layer 330: light-transmitting conductive layer
340: first passivation layer 350, 350a, 350b: mask
360: reflective layer 370: second passivation layer
400: display device 410: substrate
420: driving chip 430: conductive adhesive
431: base material 432: conductive ball
440: light emitting pixel 460: color filter
470: touch panel 500: smart watch
510: Smartphone 520: IPTV
530: notebook

Claims (16)

a base layer made of a first conductivity type semiconductor layer;
a mask selectively disposed on the base layer;
a plurality of light emitting structures selectively disposed on the base layer between the masks and including the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer, the light emitting structure having a height and width of a nanoscale;
a light-transmitting conductive layer disposed on a surface of at least a portion of a plurality of light-emitting structures constituting the light-emitting structure;
a reflective layer disposed on the light-transmitting conductive layer;
a first passivation layer and a second passivation layer sequentially disposed on a side surface of the base layer;
a first electrode disposed on the base layer; and
a second electrode disposed on the reflective layer;
The upper surface of the light-transmitting conductive layer forms a pattern,
The first passivation layer and the second passivation layer are disposed on a portion of the upper surface of the base layer,
A lower surface of the second electrode is in contact with the reflective layer and the second passivation layer, respectively,
A portion of the second passivation layer is opened on an upper portion of the reflective layer, a portion of the reflective layer is exposed in an area where the second passivation layer is open, and the exposed reflective layer and the second electrode are in direct contact with each other, and the reflective layer The upper surface of the second passivation layer in the central direction from the exposed area forms a pattern, and the upper surface of the second passivation layer in the edge direction from the exposed area of the reflective layer is flat, but a step is formed. The method of claim 1,
A surface of the reflective layer is a light emitting device forming a pattern. delete The method of claim 1,
On the upper surface of the base layer, the first passivation layer is disposed in contact with the light-transmitting conductive layer, and the second passivation layer is disposed in contact with the first passivation layer. delete The method of claim 1,
A lower surface of the second electrode forms a pattern. The method of claim 1,
A lower surface of the second electrode is a light emitting device disposed to form a pattern. delete delete delete delete delete delete delete delete delete

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