KR102456560B1 - Power semiconductor device with improved short-circuit property - Google Patents

Abstract

The present invention relates to a power semiconductor device with enhanced short circuit tolerance. A power semiconductor device with enhanced short circuit resistance is formed on a semiconductor substrate, a power semiconductor device having a gate insulated by a gate oxide, is formed on the semiconductor substrate, and an emitter having one end connected to an emitter of the power semiconductor device A resistor and a first protection diode unit are formed on the semiconductor substrate, a drain and a gate are electrically connected to a gate terminal and an emitter terminal of the power semiconductor device, and a source is formed in the emitter resistance and the first protection diode unit. It may include a pass transistor electrically connected to the other end and turned on by a voltage across both ends of the emitter resistor.

Description

Power semiconductor device with improved short-circuit property

The present invention relates to a power semiconductor device with enhanced short circuit tolerance.

The present invention is the result of the Excellent Technology Research Center (ATC) project of the Korea Institute of Industrial Technology Evaluation and Planning (Project Unique Number: 10076304, Research Project Name: 48V-based EV/HEV-compatible 100V Trench MOSFET technology development).

1 is a circuit diagram illustrating a half-bridge circuit in which a short circuit is generated.

Referring to FIG. 1A , the high-side IGBT element and the low-side IGBT element constituting the half-bridge circuit may be simultaneously turned on (short circuit state) due to a malfunction of the circuit. When a short circuit condition occurs, the collector-emitter voltage V _CE of the high-side IGBT element and the low-side IGBT element becomes V _CC /2. At the same time, a significant amount of short circuit current I _SC flows through the high-side IGBT device and the low-side IGBT device. The short circuit current I _SC can cause the high-side and low-side IGBT devices to exceed the maximum power they can withstand, which can lead to device destruction.

Meanwhile, referring to FIG. 1B , the IGBT device may be in a short circuit state due to a short circuit generated by a load. In this case, the collector-emitter voltage V _CE of the IGBT element becomes V _CC , and a significant amount of short circuit current I _SC flows through the IGBT element. Due to the power exceeding the withstand capacity of the IGBT device, a phenomenon in which the device is destroyed may occur.

2 is a graph showing a mechanism in which the IGBT element is damaged in the short circuit state in the order of the short circuit time.

Referring to FIG. 2 , a mechanism in which the IGBT element fails in the short circuit state is typically high power and thermal failure due to high current-high voltage. Breaking it down, (1) Electrical failure mode, (2) Thermal failure mode, (3) Turn-off failure mode, and heat induced leakage current It can be classified into a leak current induced thermal runaway mode.

In electrical failure mode, when the short circuit peak current when the IGBT device is turned on and reaches its peak current density or peak power density exceeds the latch-up current level of the IGBT device, latch-up occurs and the IGBT device immediately breaks down with

In the thermal failure mode, when the short circuit energy such as the short circuit current I _SC , the collector-emitter voltage V _CE , and the short circuit time t _SC goes above the threshold, the temperature of the IGBT device reaches the threshold temperature. Here, the critical temperature is a temperature at which doped silicon becomes intrinsic. At the critical temperature, the potential barrier of the junction disappears, the blocking characteristic of the IGBT device is lost, and it is permanently damaged by heat and fails.

In turn-off failure mode, voltage overshoots due to excess power surges or failures due to non-uniform operation occur. When turning off an IGBT device conducted at a high current density, the turn-off current density becomes locally non-uniform. This causes a dynamic latch where the current density is highest, causing the IGBT device to fail.

In the leakage current-induced thermal runaway mode, the IGBT device fails due to an increase in its internal temperature. IGBT devices can fail even hundreds of microseconds after turn-off in a short circuit condition. In the short circuit state, an IGBT element whose temperature rises causes a significant amount of leakage current to flow in the cut-off mode. As a result, if the continuously accumulated heat exceeds the heat dissipation capability of the IGBT device, as a result, the internal temperature of the IGBT device rises and the IGBT device fails.

3 is a circuit diagram illustrating a related technique for preventing a short circuit.

In the conventional short circuit prevention method, a short circuit protection circuit is configured outside the IGBT device to detect the occurrence of a short circuit, and a gate signal applied to the IGBT device is blocked by circuit operation. 3(a) shows that when a short circuit occurs, desaturation of the IGBT device is sensed to block the output of the gate signal, and (b) is disposed between the emitter of the IGBT device and the ground. The output of the gate signal is blocked by sensing the collector current flowing through the shunt resistor.

In the conventional short circuit prevention method described above, it usually takes 1 to 2 microseconds to block the output of the gate signal after the detection of the short circuit. During this time, since the IGBT device must withstand the short circuit state without failing, the commercialized IGBT device guarantees 5 to 10 microseconds as “Short circuit withstand time” or t _SC that guarantees the short circuit characteristics. In order for the IGBT device to have short circuit characteristics, the current I _SC flowing in the short circuit state must be reduced. To this end, it is common to design low current conduction capability. Accordingly, in order to secure the short circuit characteristics, power loss, which is the most important characteristic of the power semiconductor, that is, the conduction loss versus the switching loss in a trade-off relationship is increased.

The above-mentioned background art is technical information possessed by the inventor for the derivation of the present invention or acquired in the process of derivation of the present invention, and cannot necessarily be said to be a known technique disclosed to the general public prior to the filing of the present invention.

Korean Patent Application Laid-Open No. 2017-0024005 (Circuit and method for detecting a short circuit defect of a switching transistor)

An object of the present invention is to improve the short circuit characteristics of a power semiconductor device without reducing the conduction characteristics of the power semiconductor device.

Another object of the present invention is to provide a power semiconductor device that has a function of automatically lowering a gate voltage when a short circuit occurs, and can sufficiently withstand until an external short circuit protection circuit is activated.

Objects other than the present invention will be easily understood through the following description.

According to one aspect of the present invention, a power semiconductor device with enhanced short circuit resistance is provided. A power semiconductor device with enhanced short circuit resistance is formed on a semiconductor substrate, a power semiconductor device having a gate insulated by a gate oxide, is formed on the semiconductor substrate, and an emitter having one end connected to an emitter of the power semiconductor device A resistor and a first protection diode unit are formed on the semiconductor substrate, a drain and a gate are electrically connected to a gate terminal and an emitter terminal of the power semiconductor device, and a source is formed in the emitter resistance and the first protection diode unit. It may include a pass transistor electrically connected to the other end and turned on by a voltage across both ends of the emitter resistor.

Here, in the pass transistor, when a first short circuit current flows through the power semiconductor device when the gate of the power semiconductor device is on, the gate voltage of the gate terminal of the power semiconductor device is lowered so that the gate of the power semiconductor device is The power semiconductor device may maintain a second short circuit current smaller than the first short circuit current until it is turned off.

In an embodiment, the first protection diode unit may include a plurality of back-to-back diode pairs.

In an embodiment, a turn-on voltage of the first protection diode unit may be greater than or equal to a threshold voltage of the pass transistor.

In an embodiment, the pass transistor may be an N-channel MOSFET.

In an embodiment, a threshold voltage of the pass transistor may be smaller than a threshold voltage of the power semiconductor device.

In an embodiment, the breakdown voltage of the pass transistor may be greater than or equal to a minimum gate insulation guarantee voltage of the power semiconductor device.

In an embodiment, the power semiconductor device may further include a second protection diode part electrically connected between the gate terminal and the emitter terminal.

In an embodiment, a first signal transfer device electrically connected between a gate voltage input terminal and the gate terminal and transferring a gate voltage applied from the outside to a gate terminal of the power semiconductor device, the gate voltage input terminal, and the gate terminal and a second signal transfer device electrically connected between the drain of the pass transistor to transmit a transition current input from the gate terminal to the pass transistor.

In one embodiment, the power semiconductor device may further include a third protection diode part electrically connected between the gate terminal and the source of the pass diode.

In an embodiment, the emitter terminal may be a sense emitter terminal that outputs a short circuit branch current branched from the first short circuit current.

In an embodiment, the power semiconductor device may be an insulated gate bipolar transistor.

In an embodiment, the power semiconductor device may be a MOSFET transistor.

Other aspects, features and advantages other than those described above will become apparent from the following drawings, claims, and detailed description of the invention.

According to an embodiment of the present invention, the power semiconductor device may have improved short circuit characteristics without deteriorating the conduction characteristics.

In addition, the power semiconductor device has a built-in function for automatically lowering the gate voltage when a short circuit occurs, so that it can withstand sufficiently without being destroyed until an external short circuit protection circuit is activated.

1 is a circuit diagram showing a half-bridge circuit in which a short circuit is generated;
2 is a graph showing a mechanism in which a power semiconductor device is damaged in a short circuit state in order of short circuit time.
3 is a circuit diagram showing a related technique for preventing a short circuit.
4 is a circuit diagram illustrating a connection relationship between a power semiconductor device and a built-in short circuit protection circuit according to an embodiment of the present invention.
5 is a circuit diagram for explaining an operation of a power semiconductor device with enhanced short circuit tolerance according to an embodiment of the present invention.
6 is a timing chart for explaining the operation of a power semiconductor device with enhanced short circuit tolerance according to an embodiment of the present invention.
7 is a circuit diagram illustrating a power semiconductor device with enhanced short circuit tolerance according to another embodiment of the present invention.
8 is a circuit diagram illustrating a power semiconductor device with enhanced short circuit tolerance according to another embodiment of the present invention.
9 is a circuit diagram illustrating a power semiconductor device with enhanced short circuit tolerance according to another embodiment of the present invention.
10 is a circuit diagram illustrating a power semiconductor device with enhanced short circuit tolerance according to another embodiment of the present invention.

Since the present invention can apply various transformations and can have various embodiments, specific embodiments are illustrated in the drawings and described in detail in the detailed description. However, this is not intended to limit the present invention to specific embodiments, and should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention. In describing the present invention, if it is determined that a detailed description of a related known technology may obscure the gist of the present invention, the detailed description thereof will be omitted.

Terms such as first, second, etc. may be used to describe various elements, but the elements should not be limited by the terms. The above terms are used only for the purpose of distinguishing one component from another.

The terms used in the present application are only used to describe specific embodiments, and are not intended to limit the present invention. The singular expression includes the plural expression unless the context clearly dictates otherwise. In the present application, terms such as “comprise” or “have” are intended to designate that a feature, number, step, operation, component, part, or combination thereof described in the specification exists, but one or more other features It is to be understood that this does not preclude the possibility of the presence or addition of numbers, steps, operations, components, parts, or combinations thereof.

When an element, such as a layer, region, or substrate, is described as being “on” or extending “onto” another element, the element may be directly on or extending directly over the other element and , or an intermediate intervening element may exist. On the other hand, when an element is referred to as being “directly on” or extending “directly onto” another element, the other intermediate elements are absent. Also, when an element is described as being “connected” or “coupled” to another element, that element may be directly connected or coupled directly to the other element, or intervening elements may be present. have. On the other hand, when one element is described as being "directly connected" or "directly coupled" to another element, there is no other intermediate element present.

“below” or “above” or “upper” or “lower” or “horizontal” or “lateral” or “vertical” Relative terms such as "vertical" may be used herein to describe the relationship of one element, layer or region to another element, layer or region as shown in the figures. It should be understood that these terms are intended to encompass other orientations of the device in addition to the orientation depicted in the drawings.

Hereinafter, an embodiment of the present invention will be described in detail with reference to the related drawings.

4 is a circuit diagram illustrating a connection relationship between a power semiconductor device and a built-in short circuit protection circuit according to an embodiment of the present invention.

Referring to FIG. 4 , the power semiconductor device with enhanced short circuit resistance includes the power semiconductor device 100 and the short circuit protection circuit 200 . The power semiconductor device 100 is a vertical device in which current flows in a vertical direction of the device, and may be, for example, an insulated gate bipolar transistor, a power MOSFET, or the like. Hereinafter, the power semiconductor device will be described assuming an insulated gate bipolar transistor, and thus, when applied to a power MOSFET, the emitter may be replaced with a source and the collector with a drain, respectively.

The short circuit protection circuit 200 is disposed between the gate terminal and the emitter terminal of the power semiconductor device 100 . The short circuit protection circuit 200 protects the power semiconductor device 100 by lowering the potential applied to the gate terminal of the power semiconductor device 100 when the short circuit current I _SC flows through the power semiconductor device 100 . To this end, the short circuit protection circuit 200 is coupled between the gate and the source of the pass transistor M1 210 electrically connected to the gate terminal and the emitter terminal of the power semiconductor device 100 , and the pass transistor M1 210 . It may include an emitter resistor 220 and a first protection diode unit 230 .

The pass transistor M1 210 is an N-channel MOSFET. The drain of the pass transistor M1 210 is electrically connected to the gate terminal of the power semiconductor element 100 , the gate is electrically connected to the emitter terminal of the power semiconductor element 100 , and the source is, for example, electrically connected to ground.

One end of the emitter resistor 220 and the first protection diode unit 230 is electrically connected to the emitter terminal of the power semiconductor device 100 , and the other end is electrically connected to the source of the pass transistor M1 210 . . A voltage across the emitter resistor 220 is applied to the gate of the pass transistor M1 210 to turn on the pass transistor M1 210 . The first protection diode unit 230 protects the pass transistor M1 210 by limiting the magnitude of the voltage applied to the gate of the pass transistor M1 210 even when a very large voltage drop occurs due to the short circuit current I _SC . do. The first protection diode unit 230 includes a plurality of back-to-back diode pairs.

The pass transistor M1 210 has a P-type region formed on the N-type drift layer, a P-type well formed in the P-type region, an N+ source and N+ drain formed to extend from the top surface of the P-type well into the N-type well, and It may include a gate formed between the N+ source and the N+ drain. Meanwhile, the first protection diode unit 230 is formed by alternately disposing N-type regions and P-type regions on a field oxide formed on the P-type region. Although not shown, the emitter resistor 220 may be formed on or on the same semiconductor substrate as the power semiconductor device 100 , the pass transistor M1 210 , and the first protection diode unit 230 .

Referring to the cross-sectional shape of the power semiconductor device, it can be seen that the vertical power semiconductor device 100 and the horizontal pass transistor M1 210 are formed in the same semiconductor substrate. The power semiconductor device 100 may be formed in the active region, and the pass transistor M1 210 , the emitter resistor 220 , and the first protection diode unit 230 may be formed in a peripheral region of the active region.

5 is a circuit diagram for explaining the operation of a power semiconductor device with enhanced short circuit resistance according to an embodiment of the present invention, and FIG. 6 is a power semiconductor device with enhanced short circuit resistance according to an embodiment of the present invention. This is a timing chart for explaining the operation. Here, it is assumed that the power semiconductor device 100 is a 600V class IGBT device, and a gate voltage V _G for driving the power semiconductor device 100 is 15V and V _CC is 300V.

5 and 6 together, at t ₁ , when the gate voltage V _G is applied, the gate of the power semiconductor device 100 is turned on and the current I _C starts to flow as much as I _opt . Here, I _opt is a current flowing when the power semiconductor device 100 operates normally. On the other hand, the collector-emitter voltage V _CE decreases from V _CC to V _{cesat@I_opt} .

In a steady state, the voltage V _RE (resistance value of the emitter resistor * I _opt ) across the emitter resistor 220 is maintained to be less than the threshold voltage V _{th_M1} of the pass transistor M1 210 . Accordingly, the pass transistor M1 210 is turned off until the short circuit current I _SC is generated. Here, the breakdown voltage of the pass transistor M1 210 must be sufficiently higher than the gate voltage V _G of the power semiconductor device 100 , and must be greater than the minimum gate insulation guarantee voltage VGES.

At t ₂ , when a short circuit state occurs, in the on state of the gate of the power semiconductor device 100 , V _CC applied to the load is applied to the collector terminal and the emitter terminal of the power semiconductor device 100 . Due to this, a fairly large first short circuit current I _SC flows through the power semiconductor device 100 . On the other hand, as illustrated in t ₂ of FIG. 6 , when a short circuit state occurs, an instantaneous surge current and voltage are generated. Due to this, the voltage across the emitter resistor 220 may also rapidly increase. The first protection diode unit 230 having a turn-on voltage greater than the threshold voltage V _{th_M1} of the pass transistor M1 210 , from a sudden increase in the voltage across the emitter resistor 220 due to the surge current, causes the pass transistor M1 210 to ) to protect

The voltage V _RE across the emitter resistor 220, which was maintained less than the threshold voltage V _{th_M1} of the pass transistor M1 210 in the normal state, becomes greater than the threshold voltage V _{th_M1} of the pass transistor M1 210 at t ₂ ( V _{th_M1} <resistance of emitter resistor * I _SC ). The voltage V _RE across the emitter resistor 220 becomes the gate-source voltage V _{GS_M1} of the pass transistor M1 210 , and after a predetermined delay time elapses, the pass transistor M1 210 is turned on at t ₃ . (t ₃ -t ₂ : turn-on delay time of pass transistor)

When the pass transistor M1 210 is turned on, the charged gate voltage of the power semiconductor device 100 is discharged through the pass transistor M1 210 . Accordingly, a transition current I _{d_M1} flowing from the gate of the power semiconductor device 100 through the pass transistor M1 210 is generated. At this time, the gate voltage V _G of the power semiconductor device 100 is lowered to the drain-source voltage V _{DS_M1} of the pass transistor M1 210 . Due to the lowered gate voltage V _G , the collector current I _C of the power semiconductor element becomes the second short circuit current I _SC (>I _opt ) which is smaller than the first short circuit current I _SC . The decrease in energy emitted in the short circuit state by the pass transistor M1 210 is when an external short circuit protection circuit (refer to FIG. 3 ) is activated to turn off the gate of the power semiconductor device 100 (ie, time t) Up to ₄ ), the power semiconductor device 100 provides conditions that can be sufficiently tolerated. That is, due to the lowered gate voltage V _G , the collector current I _C becomes the second short circuit current I _SC smaller than the first short circuit current I _SC , and tsc (Short Circuit Withstand Time) increases as the current decreases, so that the external During the time during which the protection circuit is activated, the power semiconductor device 100 can withstand without failure.

7 is a circuit diagram illustrating a power semiconductor device with enhanced short circuit tolerance according to another embodiment of the present invention.

Referring to FIG. 7 , a power semiconductor device with enhanced short circuit resistance includes a power semiconductor device 100 and a short circuit protection circuit 201 disposed between a gate terminal and an emitter terminal of the power semiconductor device 100 . . The short circuit protection circuit 201 lowers the potential applied to the gate terminal of the power semiconductor device 100 to become the second short circuit current I _SC when the collector current I _C is the first short circuit current I _SC , The power semiconductor device 100 is protected until the gate of the power semiconductor device 100 is turned off by the short circuit protection circuit (see FIG. 3 ) located in the . Additionally, the short circuit protection circuit 201 may protect the gate of the power semiconductor device 100 from a surge voltage or static electricity.

To this end, the short circuit protection circuit 201 is electrically connected between the gate and the source of the pass transistor M1 210 and the pass transistor M1 210 electrically connected to the gate terminal and the emitter terminal of the power semiconductor device 100 . a combined emitter resistor 220 and a first protection diode part 230 , and a second protection diode part 240 electrically coupled between the gate terminal of the power semiconductor device 100 and one end of the emitter resistor can do. The second protection diode unit 240 includes a plurality of back-to-back diode pairs.

The first protection diode unit 230 and the second protection diode unit 240 may be formed by a plurality of back-to-back diode pairs (hereinafter, diode strings) illustrated in FIG. 4 . In detail, in order to protect the gate of the power semiconductor device 100 from a surge voltage or static electricity, a diode string is required. A part of the diode string may be used as the second protection diode unit 240 , and the rest may be used as the first protection diode unit 230 .

8 is a circuit diagram illustrating a power semiconductor device with enhanced short circuit tolerance according to another embodiment of the present invention.

Referring to FIG. 8 , a power semiconductor device with enhanced short circuit resistance includes a power semiconductor device 100 and a short circuit protection circuit 202 disposed between a gate terminal and an emitter terminal of the power semiconductor device 100 . . The short circuit protection circuit 202 lowers the potential applied to the gate terminal of the power semiconductor device 100 to become the second short circuit current I _SC when the collector current I _C is the first short circuit current I _SC , The power semiconductor device 100 is protected until the gate of the power semiconductor device 100 is turned off by the short circuit protection circuit (see FIG. 3 ) located in the . Additionally, the short circuit protection circuit 202 may protect the gate of the power semiconductor device 100 from a surge voltage or static electricity.

To this end, the short circuit protection circuit 202 is electrically connected between the gate and the source of the pass transistor M1 210 and the pass transistor M1 210 electrically connected to the gate terminal and the emitter terminal of the power semiconductor device 100 . The combined emitter resistor 220 and the first protection diode part 230 , and the third protection diode part 250 electrically coupled between the gate terminal of the power semiconductor device 100 and the other end of the emitter resistor 220 . ) may be included. The third protection diode unit 250 includes a plurality of back-to-back diode pairs. Here, the turn-on voltage of the third protection diode unit 250 may be smaller than the breakdown voltage of the pass transistor M1 210 .

9 is a circuit diagram illustrating a power semiconductor device with enhanced short circuit tolerance according to another embodiment of the present invention.

Referring to FIG. 9 , a power semiconductor device with enhanced short circuit resistance includes a power semiconductor device 100 and a short circuit protection circuit 203 disposed between a gate terminal and an emitter terminal of the power semiconductor device 100 . . The short circuit protection circuit 203 includes a pass transistor M1 210 that does not operate during normal operation of the power semiconductor device 100 and operates only during gate discharge of the power semiconductor device 100 in a short circuit state. . It operates only when the collector current I _C is the first short circuit current I _SC , so that the potential applied to the gate terminal of the power semiconductor device 100 is lowered to become the second short circuit current I _SC .

To this end, the short circuit protection circuit 203 discharges the gate of the first signal transmission device 260 and the power semiconductor device 100 that transfers the gate voltage V _G to the gate terminal of the power semiconductor device 100 and outputs the discharge. A second signal transfer device 270 for transferring the transition current to the pass transistor M1 210 , a pass transistor M1 210 electrically connected to a gate terminal and an emitter terminal of the power semiconductor device 100 , and a pass transistor An emitter resistor 220 and a first protection diode unit 230 electrically coupled between the gate and the source of the M1 210 may be included.

The first signal transfer device 260 includes a first signal transfer diode and a first signal transfer resistor connected in series between a gate voltage input terminal and the gate terminal, and the gate voltage V _G applied from the outside through the gate voltage input terminal. is transferred to the gate terminal of the power semiconductor device 100 . The second signal transfer device 270 includes a second signal transfer resistor and a second signal transfer diode connected in series between the gate voltage input terminal and the gate terminal, and the drain of the pass transistor M1 210 transfers the second signal. It is electrically connected to the connection node of the resistor and the second signal transfer diode. The transition current I _{d_M1} generated by discharging the gate of the power semiconductor device 100 flows to the drain of the pass transistor M1 210 through the second signal transfer diode.

10 is a circuit diagram illustrating a power semiconductor device with enhanced short circuit tolerance according to another embodiment of the present invention.

Referring to FIG. 10 , a power semiconductor device with enhanced short circuit resistance includes a power semiconductor device 100 and a short circuit protection circuit 204 disposed between a gate terminal and an emitter terminal of the power semiconductor device 100 . . The short circuit protection circuit 204 includes a pass transistor M1 210 that does not operate during normal operation of the power semiconductor device 100 and operates only during gate discharge of the power semiconductor device 100 in a short circuit state. . Additionally, the short circuit protection circuit 204 may further include a second protection diode unit 240 .

On the other hand, there may be a case in which the emitter resistance 220 cannot be implemented sufficiently small in consideration of the very large first short circuit current I _SC in the short circuit state. When the voltage across the emitter resistor 220 increases, the gate of the pass transistor M1 210 may be damaged despite the presence of the first protection diode unit 230 . To prevent this, the power semiconductor device 100 may further include a sense emitter terminal in addition to the main emitter terminal. The first short circuit current I _SC is branched at a predetermined ratio and output to the main emitter terminal and the sense emitter terminal. The current output to the sense emitter terminal (hereinafter referred to as short circuit branch current) is smaller than the current output to the main emitter terminal. The emitter resistor 220 is electrically coupled to the sense emitter terminal, and the voltage across both ends by the short circuit branch current becomes the gate-source voltage V _{GS_M1} of the pass transistor M1 210 . As a result, the voltage applied to the pass transistor M1 210 may be reduced at a predetermined rate, so that the gate of the pass transistor M1 210 may be protected.

Up to now, the power semiconductor device 100 has been illustrated using an insulated gate bipolar transistor (IGBT) as an example, but the technical idea of the present invention is the same for various types of power semiconductor devices such as an N-channel MOSFET and a P-channel MOSFET It goes without saying that similar applications and extensions are possible.

Although the above has been described with reference to the embodiments of the present invention, those of ordinary skill in the art can variously modify the present invention within the scope without departing from the spirit and scope of the present invention described in the claims below. and may be changed.

100: power semiconductor device
200, 201, 202, 203, 204: short circuit protection circuit
210: pass transistor
220: emitter resistance
230: first protection diode unit
240: second protection diode unit
250: third protection diode unit
260: first signal transmission element
270: second signal transmission element

Claims (12)

a power semiconductor device formed on a semiconductor substrate and having a gate insulated by a gate oxide;
an emitter resistor and a first protection diode part formed on the semiconductor substrate and having one end connected to an emitter of the power semiconductor device;
It is formed on the semiconductor substrate, a drain and a gate are electrically connected to a gate terminal and an emitter terminal of the power semiconductor device, and a source is electrically connected to the emitter resistor and the other end of the first protection diode part, so that the emitter a pass transistor turned on by the voltage across the resistor;
a first signal transmission device electrically connected between a gate voltage input terminal and the gate terminal and transmitting a gate voltage applied from the outside to a gate terminal of the power semiconductor device; and
a second signal transfer device electrically connected between the gate voltage input terminal, the gate terminal, and the drain of the pass transistor to transfer the transition current input from the gate terminal to the pass transistor;
In the pass transistor, when a first short circuit current flows through the power semiconductor device when the gate of the power semiconductor device is on, the gate voltage of the gate terminal of the power semiconductor device is lowered so that the gate of the power semiconductor device is turned off Until the power semiconductor device maintains a second short circuit current smaller than the first short circuit current, a power semiconductor device with enhanced short circuit tolerance. According to claim 1,
The first protection diode unit, including a plurality of back-to-back diode pairs, short circuit resistance is enhanced power semiconductor device. 3. The method of claim 2,
A turn-on voltage of the first protection diode unit is equal to or greater than a threshold voltage of the pass transistor, and short circuit resistance is enhanced. According to claim 1,
The pass transistor is an N-channel MOSFET, a power semiconductor device with enhanced short circuit resistance. 5. The method of claim 4,
The threshold voltage of the pass transistor is smaller than the threshold voltage of the power semiconductor device, short circuit resistance is enhanced power semiconductor device. 5. The method of claim 4,
The breakdown voltage of the pass transistor is greater than or equal to the minimum gate insulation guaranteed voltage of the power semiconductor device, the short circuit resistance is enhanced power semiconductor device. According to claim 1,
Further comprising a second protection diode part electrically connected between the gate terminal and the emitter terminal of the power semiconductor device, short circuit resistance is enhanced power semiconductor device. delete According to claim 1,
A power semiconductor device with enhanced short circuit tolerance further comprising a third protection diode part electrically connected between the gate terminal of the power semiconductor device and the source of the pass transistor. According to claim 1,
The emitter terminal is a sense emitter terminal for outputting a short circuit branch current branched from the first short circuit current, a power semiconductor device with enhanced short circuit resistance. According to claim 1,
The power semiconductor device is an insulated gate bipolar transistor, a power semiconductor device with enhanced short circuit resistance. According to claim 1,
The power semiconductor device is a MOSFET transistor, a power semiconductor device with enhanced short circuit resistance.

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