KR102452019B1 - 기판 처리 장치, 온도 제어 방법 및 온도 제어 프로그램 - Google Patents

기판 처리 장치, 온도 제어 방법 및 온도 제어 프로그램 Download PDF

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Publication number
KR102452019B1
KR102452019B1 KR1020180006074A KR20180006074A KR102452019B1 KR 102452019 B1 KR102452019 B1 KR 102452019B1 KR 1020180006074 A KR1020180006074 A KR 1020180006074A KR 20180006074 A KR20180006074 A KR 20180006074A KR 102452019 B1 KR102452019 B1 KR 102452019B1
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KR
South Korea
Prior art keywords
heater
temperature
substrate
measurement point
divided
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KR1020180006074A
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English (en)
Korean (ko)
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KR20180085690A (ko
Inventor
신스케 오카
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20180085690A publication Critical patent/KR20180085690A/ko
Application granted granted Critical
Publication of KR102452019B1 publication Critical patent/KR102452019B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020180006074A 2017-01-19 2018-01-17 기판 처리 장치, 온도 제어 방법 및 온도 제어 프로그램 KR102452019B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2017007878 2017-01-19
JPJP-P-2017-007878 2017-01-19
JP2017239167A JP6986947B2 (ja) 2017-01-19 2017-12-14 基板処理装置、温度制御方法及び温度制御プログラム
JPJP-P-2017-239167 2017-12-14

Publications (2)

Publication Number Publication Date
KR20180085690A KR20180085690A (ko) 2018-07-27
KR102452019B1 true KR102452019B1 (ko) 2022-10-06

Family

ID=62985707

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180006074A KR102452019B1 (ko) 2017-01-19 2018-01-17 기판 처리 장치, 온도 제어 방법 및 온도 제어 프로그램

Country Status (3)

Country Link
JP (1) JP6986947B2 (ja)
KR (1) KR102452019B1 (ja)
TW (1) TWI772356B (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111009454B (zh) * 2018-10-05 2024-05-17 东京毅力科创株式会社 等离子体处理装置、监视方法以及记录介质
US20220223440A1 (en) * 2019-03-15 2022-07-14 Lam Research Corporation Rapid tuning of critical dimension non-uniformity by modulating temperature transients of multi-zone substrate supports
JP2021152762A (ja) * 2020-03-24 2021-09-30 株式会社Ｓｃｒｅｅｎホールディングス 学習済みモデル生成方法、学習済みモデル、異常要因推定装置、基板処理装置、異常要因推定方法、学習方法、学習装置、及び、学習データ作成方法
JP7200438B1 (ja) * 2021-03-25 2023-01-06 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013145806A (ja) * 2012-01-13 2013-07-25 Tokyo Electron Ltd プラズマ処理装置及びヒータの温度制御方法
US20170011890A1 (en) * 2015-07-09 2017-01-12 Hitachi High-Technologies Corporation Plasma processing device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7356380B2 (en) * 2004-12-30 2008-04-08 Taiwan Semiconductor Manufacturing Co., Ltd. Process control method
JP4509820B2 (ja) * 2005-02-15 2010-07-21 東京エレクトロン株式会社 熱処理板の温度設定方法，熱処理板の温度設定装置，プログラム及びプログラムを記録したコンピュータ読み取り可能な記録媒体
JP6066728B2 (ja) 2009-12-15 2017-01-25 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ Ｃｄの均一性を向上させるための基板温度調整を行う方法及びプラズマエッチングシステム

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013145806A (ja) * 2012-01-13 2013-07-25 Tokyo Electron Ltd プラズマ処理装置及びヒータの温度制御方法
US20170011890A1 (en) * 2015-07-09 2017-01-12 Hitachi High-Technologies Corporation Plasma processing device

Also Published As

Publication number Publication date
TW201841549A (zh) 2018-11-16
JP6986947B2 (ja) 2021-12-22
KR20180085690A (ko) 2018-07-27
TWI772356B (zh) 2022-08-01
JP2018117115A (ja) 2018-07-26

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