KR102451617B1 - Integral Process Kit Shield - Google Patents

Abstract

Embodiments of process kit shields and process chambers including the same are provided herein. In some embodiments, a one-piece process kit shield comprises a cylindrical body having an upper portion and a lower portion; a heat transfer channel extending through the upper portion; and a cover ring section extending radially inwardly from the lower portion.

Description

Integral Process Kit Shield

[0001] Embodiments of the present disclosure relate generally to substrate processing equipment.

[0002] A process kit shield may be used, for example, in a physical vapor deposition (PVD) chamber to isolate a processing volume from a non-processing volume. In PVD chambers configured to deposit aluminum on a substrate, the process kit shield may be made of, for example, stainless steel (SST). Since the aluminum layer deposited on the process kit shield during processing can be preferentially etched away from the base SST shield material, the SST process kit shield can be recycled multiple times. However, the inventors have worked to deposit relatively thicker aluminum films on a substrate using significantly increased process power and deposition time compared to conventional aluminum deposition processes.

[0003] For thicker aluminum deposition processes, the inventors have observed that the temperature of the process kit shield is, undesirably, high enough to cause whisker growth on the substrate. The inventors believe that whiskers form when the process kit surrounding the substrate does not have enough time to cool between subsequent processes. The deposition process heats the substrate much more than the heated substrate support. Because the substrate is electrostatically chucked to the pedestal, the wafer is caused by a mismatch in the coefficient of thermal expansion (CTE) between the thick aluminum film and the substrate (eg, silicon). Under the induced thermal stress, it does not bow freely. When the film stress to the substrate is high enough, the whiskers pop out of the film to reduce the film stress. The inventors have further observed that high temperatures in structures surrounding the substrate also adversely affect the reflectivity of the aluminum film deposited on the substrate. The temperature of the shield and cover ring plays an important role in cooling the substrate through thermal radiation and in minimizing whisker formation.

[0004] In addition, when the process kit undergoes thermal cycling from plasma heating and subsequent cooling while the plasma is off, the film deposited on the process kit forms a gap between the film and the underlying component material. It experiences thermal stress resulting from the mismatch of the CTE. When the stress exceeds the limits of adhesion, the particles flake from the process kit and land on the substrate.

[0005] Accordingly, the inventors have provided embodiments of improved process kit shields as disclosed herein.

[0006] Embodiments of process kit shields and process chambers including the same are provided herein. In some embodiments, a one-piece process kit shield comprises a cylindrical body having an upper portion and a lower portion; a heat transfer channel extending through the upper portion; and a cover ring section extending radially inwardly from the lower portion.

[0007] In some embodiments, the integral process kit shield comprises: a cylindrical body having an upper portion and a lower portion; adapter section extending radially outward from the upper portion—the adapter section seals a resting surface for supporting the integral shield on the walls of the chamber and the interior volume of the chamber when the integral shield is positioned in the chamber having a sealing surface upon which the chamber lid rests; a heat transfer channel extending through the adapter section; a covering ring section extending radially inwardly from the lower portion; and a turbulence generating device disposed within the heat transfer channel.

[0008] In some embodiments, the process chamber includes: a chamber wall defining an inner volume within the process chamber; a sputtering target disposed in the upper section of the inner volume; a substrate support having a support surface for supporting a substrate under a sputtering target; It includes an integral process kit shield surrounding the substrate support and the sputtering target. The integrated process kit shield comprises: a cylindrical body having an upper portion surrounding a sputtering target and a lower portion surrounding a substrate support; a heat transfer channel extending through the upper portion; and a cover ring section extending radially inwardly from the lower portion and surrounding the substrate support.

[0009] Other and additional embodiments of the present disclosure are described below.

BRIEF DESCRIPTION OF THE DRAWINGS Embodiments of the present disclosure briefly summarized above and discussed in greater detail below may be understood with reference to exemplary embodiments of the present disclosure shown in the accompanying drawings. However, the appended drawings illustrate only typical embodiments of the present disclosure and are not to be considered limiting in scope, as the present disclosure may admit to other equally effective embodiments.
1 shows a schematic cross-sectional view of a process chamber, in accordance with some embodiments of the present disclosure;
2 shows a schematic cross-sectional view of a process kit shield, in accordance with some embodiments of the present disclosure;
3 shows a schematic cross-sectional view of an upper portion of a process kit shield, in accordance with some embodiments of the present disclosure;
4 shows a schematic side view of a turbulence generating device for use in a process kit shield in accordance with some embodiments of the present disclosure;
To facilitate understanding, where possible, like reference numbers have been used to indicate like elements that are common to the drawings. The drawings are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated into other embodiments without further recitation.

[0016] Embodiments of process kit shields and process chambers including such process kit shields are provided herein. In some embodiments, provided herein is an integral process kit shield comprising an adapter section and a cover ring section corresponding to the adapter and cover ring, respectively. The adapter section may include a heat transfer channel to cool the integral process kit shield. The integrated process kit shield advantageously improves cooling of the shield and improved thermal conductivity between the various parts of the shield, which were formerly separate components.

1 shows a schematic cross-sectional view of an exemplary process chamber 100 (eg, a PVD chamber) having a process kit shield in accordance with some embodiments of the present disclosure. Examples of PVD chambers suitable for use with the process kit shields of the present disclosure include ^ALPS® Plus, SIP ^ENCORE® , and other PVD processing chambers, commercially available from Applied Materials, Inc. of Santa Clara, CA. do. Applied Materials, Inc. Or other processing chambers from other manufacturers may also benefit from the inventive apparatus disclosed herein.

The process chamber 100 includes chamber walls 106 that enclose an inner volume 108 . Chamber walls 106 include sidewalls 116 , a bottom wall 120 , and a ceiling 124 . The process chamber 100 may be a stand-alone chamber, or part of a multi-chamber platform (not shown) having a cluster of interconnected chambers connected by a substrate transfer mechanism that transfers substrates 104 between the various chambers. . Process chamber 100 may be a PVD chamber capable of sputter depositing material onto substrate 104 . Non-limiting examples of suitable materials for sputter deposition include one or more of aluminum, copper, tantalum, tantalum nitride, titanium, titanium nitride, tungsten, tungsten nitride, and the like.

The process chamber 100 includes a substrate support 130 that includes a pedestal 134 to support a substrate 104 . The pedestal 134 has a substrate support surface 138 having a plane substantially parallel to the sputtering surface 139 of the sputtering target 140 . A substrate support surface 138 of the pedestal 134 receives and supports the substrate 104 during processing. The pedestal 134 may include an electrostatic chuck or heater (eg, an electrically resistive heater, heat exchanger, or other suitable heating device). In operation, the substrate 104 is introduced into the processing chamber 100 through a substrate loading inlet 142 in the sidewall 116 of the process chamber 100 and is positioned on the substrate support 130 . The substrate support 130 may be lifted or lowered by a support lift mechanism, and the lift finger assembly, during placement of the substrate 104 on the substrate support 130 by the robot arm, the substrate ( 104 may be used to lift and lower onto the substrate support 130 . The pedestal 134 may be electrically grounded or maintained at a floating potential during plasma operation.

The process chamber 100 also includes a process kit 200 as shown in FIGS. 2 and 3 , the process kit including various components, eg, sputtering deposits from component surfaces. It can be easily removed from the process chamber 100 to clean deposits, to replace or repair corroded components, or to adapt the process chamber 100 to other processes. The inventors have found that thermal resistances at the contact interfaces of the process kit shield, process kit adapter, and process kit cover ring adversely affect shield temperatures. In addition, low clamping forces between the shield and the adapter result in poor heat transfer between the adapter and the shield, even if coolant channels are used to enhance heat transfer rates. The low heat transfer rate problem is exacerbated for the cover ring as it is a floating element (ie not coupled to the shield). Accordingly, the inventors have designed a process kit having a cover ring and an integral shield 201 that advantageously provides improved cooling/heating of the shield.

In some embodiments, the integral shield 201 is larger than a diameter (eg, sputtering surface 139 ) sized to surround the sputtering surface 139 of the substrate support 130 and the sputtering target 140 . and a cylindrical body 214 having a larger diameter than the support surface of the substrate support 130). The cylindrical body 214 has an upper portion 216 surrounding the outer edge of the sputtering surface 139 of the sputtering target 140 , and a lower portion 217 surrounding the substrate support 130 . The upper portion 216 includes an adapter section 226 for supporting the integral shield 201 on the sidewall 116 , and a cover ring section 212 for placement around the peripheral wall 204 of the substrate support 130 . ) is included.

The process kit 200 further includes a deposition ring 208 disposed below the cover ring section 212 . The bottom surface of the covering ring section 212 interfaces with the deposition ring 208 . The deposition ring 208 includes an annular band 215 surrounding the substrate support 130 . The covering ring section 212 at least partially covers the deposition ring 208 . The deposition ring 208 and the cover ring section 212 cooperate with each other to reduce the formation of sputter deposits on the overhanging edge 206 of the substrate 104 and the peripheral walls 204 of the substrate support 130 . make it

The integral shield 201 surrounds the sputtering surface 139 of the sputtering target 140 , which faces the substrate support 130 and the outer periphery of the substrate support 130 . The integral shield 201 is provided in the process chamber 100 to reduce deposition of sputtering deposits originating from the sputtering surface 139 of the sputtering target 140 onto the surfaces and components behind the integral shield 201 . ) covers and shadows the sidewalls 116 of For example, the integral shield 201 may protect the bottom wall 120 and sidewalls 116 of the process chamber 100 , the protruding edge 206 of the substrate 104 , and the surfaces of the substrate support 130 . can

1-3 , the covering ring section extends radially inward from the lower portion 217 of the cylindrical body 214 and the adapter section 226 radially outwardly from the upper portion 216 . is extended The adapter section 226 includes a sealing surface 233 , and a seating surface 234 opposite the sealing surface 233 . The sealing surface 233 includes an O-ring groove 222 to receive an O-ring 223 to form a vacuum seal. The adapter section 226 includes a seating surface 234 for seating on the sidewalls 116 of the process chamber 100 .

The adapter section 226 supports the integral shield 201 and may serve as a heat exchanger around the sidewall 116 of the process chamber 100 . In some embodiments, a heat transfer channel 289 is disposed in the upper portion 216 to flow a heat transfer medium. In some embodiments, the heat transfer channel 289 is disposed in the adapter section 226 . Since the integral shield 201 is of a unitary structure, the heat transfer medium flowing through the heat transfer channel 289 is directed to regions of the integral shield 201 (ie, the cylindrical body, respectively, corresponding to the shield and cover ring). 214 and covering section 212) are directly cooled/heated. Moreover, the unitary structure of the integral shield 201 advantageously allows for direct coupling of the heat transfer medium supply 180 to the shield, which has previously been indirectly coupled to the heat transfer medium supply via an adapter. The heat transfer medium supply 180 flows the heat transfer medium through the heat transfer channel 289 at a flow rate sufficient to maintain the desired shield temperature.

4 illustrates a turbulence generating device 400 in accordance with some embodiments of the present disclosure. In some embodiments, the heat transfer channel 289 may include one or more turbulence generating devices 400 (shown in FIG. 4 ). The turbulence generating device 400 includes a helically shaped body 402 for causing turbulence in the flow of the heat transfer medium, and a base 404 . The base 404 is configured to engage the walls of the heat transfer channel 289 to prevent the turbulence generating device 400 from moving as the heat transfer medium flows and passes through the turbulence generating device 400 . The turbulence caused by the turbulence generating device 400 advantageously improves the rate of heat transfer between the heat transfer medium and the integral shield 201 .

[0027] Returning again to FIG. 2, the integral shield 201 allows for better heat transfer from the integral shield 201, which reduces thermal expansion stresses to the material deposited on the shield. Portions of the integral shield 201 may be excessively heated by exposure to plasma formed in the substrate processing chamber, resulting in thermal expansion of the shield, and sputtering deposits formed on the shield flaking from the shield to the substrate. (104) to fall on and contaminate the substrate. The single structure of the cylindrical body 214 and the adapter section 226 results in improved thermal conductivity between the adapter section 226 and the cylindrical body 214 .

In some embodiments, the unitary shield 201 comprises a unitary structure made from a monolith of material. For example, the integral shield 201 may be formed of stainless steel or aluminum. The unitary construction of the integral shield 201 is advantageous over conventional shields that include multiple components, usually two or three separate pieces, to make a complete shield. For example, a single piece shield is thermally more uniform than a multi-component shield in both heating and cooling processes. For example, integral shield 201 eliminates all thermal interfaces between cylindrical body 214 , adapter section 226 , and covering ring section 212 , allowing more control over heat exchange between these sections. allow In some embodiments, the heat transfer medium supply 180 applies a coolant to the heat transfer channel to prevent the adverse effects of an overheated shield on the sputtered material deposited on the substrate 104 , as described above. flow through (289). In some embodiments, the heat transfer medium supply 180 flows the heated fluid through the heat transfer channel 289 to mitigate the difference between the coefficients of thermal expansion of the sputtered material and the shield.

In addition, a shield with multiple components is more difficult and difficult to remove for cleaning. The integral shield 201 has a continuous surface that is exposed to sputtering deposits without corners or interfaces that are more difficult to clean. The integral shield 201 also shields the chamber walls 106 more effectively from sputter deposition during process cycles. In some embodiments, the surfaces of the integral shield 201 , exposed to the inner volume 108 of the process chamber 100 , prevent contamination within the process chamber 100 and reduce particle shedding. It can be bead blasted (bead blasted).

The deposition ring 208 includes an annular band 215 that extends around and surrounds the peripheral wall 204 of the substrate support 130 , as shown in FIG. 2 . The annular band 215 includes an inner lip 250 that extends transversely from the annular band 215 and is substantially parallel to the peripheral wall 204 of the substrate support 130 . The inner lip 250 terminates just below the protruding edge 206 of the substrate 104 . The inner lip 250 has a deposition ring 208 that surrounds the substrate support 130 and the perimeter of the substrate 104 to protect areas of the substrate support 130 that are not covered by the substrate 104 during processing. define the inner perimeter of To reduce or even completely prevent deposition of sputtering deposits on the peripheral wall 204 , for example, an inner lip 250 surrounds and at least partially covers the peripheral wall 204 of the substrate support 130 , the perimeter The wall would otherwise be exposed to the processing environment. Advantageously, the deposition ring 208 can be easily removed to clean sputtering deposits from exposed surfaces of the deposition ring 208 , such that the substrate support 130 does not need to be disassembled to be cleaned. The deposition ring 208 may also serve to reduce corrosion of the side surfaces by energized plasma species to protect the exposed side surfaces of the substrate support 130 .

In some embodiments, the annular band 215 of the deposition ring 208 has a semi-circular protrusion 252 that extends along a central portion of the annular band 215 and is semi-circular. On either side of the protrusion 252 are radially inner dips 254a, 254b. The radially inner dip 254a is spaced from the covering ring section 212 to form an arc-shaped gap 256 between the deposition ring 208 and the covering ring section 212, which is an arc-shaped gap ( 256) acts as a labyrinth to reduce the penetration of plasma species into it. An open inner channel 258 lies between the inner lip 250 and the semi-circular protrusion 252 . The open inner channel 258 extends radially inward to terminate at least partially below the protruding edge 206 of the substrate 104 . The open inner channel 258 facilitates removal of sputtering deposits from these portions during cleaning of the deposition ring 208 . The deposition ring 208 also has a ledge 260 that extends outward and is located radially outward of the semi-circular protrusion 252 . The ledge 260 serves to partially support the covering ring section 212 , thus providing additional support to the integral shield 201 .

A covering ring section 212 surrounds and at least partially surrounds the deposition ring 208 to receive the deposition ring 208 and thus shadow the deposition ring 208 from a bulk of sputtering deposits. cover with The covering ring section 212 includes an annular wedge 262 that is radially inwardly sloped and includes an inclined upper surface 264 surrounding the substrate support 130 . The beveled upper surface 264 of the annular wedge 262 includes a raised brim 270 overlying a radially inner dip 254a comprising an open inner channel 258 of the deposition ring 208 . It has an inner perimeter 266 . The raised brim 270 reduces the deposition of sputtering deposits on the open inner channel 258 of the deposition ring 208 . Advantageously, the protruding brim 270 projects a distance corresponding to at least about half the width of the arc-shaped gap 256 formed with the deposition ring 208 . The protruding brim 270 cooperates with the arc-shaped gap 256 to form a convoluted and constricted flow path between the cover ring section 212 and the deposition ring 208 . and sized, shaped, and positioned to fill the gap, thereby inhibiting the flow of process deposits onto the peripheral wall 204 .

The constricted flow path of the narrow arc-shaped gap 256 builds up low-energy sputter deposits on mating surfaces of the covering ring section 212 and the deposition ring 208 . up), otherwise such deposits will stick to each other or to the protruding edge 206 of the substrate 104 . The open inner channel 258 of the deposition ring 208 extending below the protruding edge 206 reduces or even substantially reduces sputter deposition on the mating surfaces of the deposition ring 208 and the cover ring section 212 . It is designed with shadowing from the protruding brim 270 of the covering ring section 212 to collect sputter deposits in the sputtering chamber while preventing the The beveled upper surface 264 may be inclined at an angle from at least about 15°. The angle of the beveled upper surface 264 of the covering ring section 212 is designed to minimize the build-up of sputter deposits closest to the protruding edge 206 of the substrate 104 that would otherwise be the substrate 104 . will negatively affect deposition uniformity across

The cover ring section 212 includes a footing 276 extending downwardly from the beveled upper surface 264 of the annular wedge 262 to rest on the ledge 260 of the deposition ring 208 . include Footing 276 extends downwardly from wedge 262 to press against deposition ring 208 without substantially cracking or fracturing deposition ring 208 .

As shown in FIGS. 1-3 , the sputtering target 140 includes a sputtering plate 280 mounted on a backing plate 284 . The sputtering plate 280 contains the material to be sputtered onto the substrate 104 . The sputtering plate 280 may have a central cylindrical mesa 286 having a sputtering surface 139 that forms a plane parallel to the plane of the substrate 104 . A beveled annular rim 288 surrounds the cylindrical mesa 286 . The beveled annular rim 288 may be inclined relative to the plane of the cylindrical mesa 286 by an angle of at least about 8°, such as between about 10° and about 20°. A beveled peripheral sidewall 290 having a projection 294 and a recess 296 surrounds the beveled annular rim 288 . The beveled peripheral sidewall 290 may be inclined by an angle of at least about 60°, such as between about 75° and about 85°, with respect to the plane of the cylindrical mesa 286 .

[0036] The complex shape of the beveled annular rim 288 and the beveled peripheral sidewall 290 adjacent the upper portion 216 of the integral shield 201 is a convoluted gap comprising a dark space region ( 300) is formed. The dark space region is a region in which free electrons are so depleted that they can be modeled as a vacuum. Control of the dark space region advantageously prevents plasma entry, arcing, and plasma instability into the dark space region. The shape of the gap 300 acts as a labyrinth that impedes the passage of the sputtered plasma species through the gap 300 , thus reducing the accumulation of sputtered deposits on the surfaces of the surrounding target area.

[0037] The sputtering plate 280 includes a metal or a metal compound. For example, the sputtering plate 280 may be, for example, a metal such as aluminum, copper, tungsten, titanium, cobalt, nickel, or tantalum. The sputtering plate 280 may also be, for example, a metal compound such as tantalum nitride, tungsten nitride, or titanium nitride.

The backing plate 284 has a support surface 303 for supporting the sputtering plate 280 , and a peripheral ledge 304 extending beyond a radius of the sputtering plate 280 . The backing plate 284 is made of, for example, a metal such as stainless steel, aluminum, copper-chromium or copper-zinc. Backing plate 284 may be made of a material having a high enough thermal conductivity to dissipate heat generated by sputtering target 140 formed on both sputtering plate 280 and backing plate 284 . Heat is generated from eddy currents generated in these plates 280 , 284 , and also from the collision of energetic ions from the plasma onto the sputtering surface 139 of the sputtering target 140 . The higher thermal conductivity of the backing plate 284 allows for the dissipation of heat generated in the sputtering target 140 to surrounding structures or even to a heat exchanger, which can be mounted behind the backing plate 284 . or within the backing plate 284 itself. For example, backing plate 284 may include channels (not shown) to circulate heat transfer fluid within the channels. A suitably high thermal conductivity of the backing plate 284 is at least about 200 W/mK, such as about 220 to about 400 W/mK. Such a level of thermal conductivity allows the sputtering target 140 to be operated for longer process time periods by dissipating the heat generated in the sputtering target 140 more efficiently.

[0039] The backing plate 284, separately and alone, or in combination with a backing plate 284 made of a material having high thermal conductivity and low resistivity, may have one or more grooves (not shown) It may include a back surface with For example, the backing plate 284 may have a groove, such as an annular groove, or a ridge, in order to cool the rear surface 141 of the sputtering target 140 . The grooves and ridges may also have other patterns, such as a rectangular grid pattern, chicken foot patterns, or simple straight lines running across the back surface.

[0040] In some embodiments, the sputtering plate 280 places the two plates 280, 284 on top of each other and brings the plates 280, 284 to a suitable temperature, typically at least about 200 °C. By heating, it can be mounted on the backing plate 284 by diffusion bonding. Optionally, the sputtering target 140 may be a monolithic structure comprising a single piece of material having sufficient depth to serve as both a sputtering plate and a backing plate.

The peripheral ledge 304 of the backing plate 284 includes an outer footing 308 that rests on the isolator 310 of the process chamber 100 ( FIGS. 2 and 3 ). Peripheral ledge 304 includes an O-ring groove 312 in which an O-ring 314 is positioned to form a vacuum seal. The isolator 310 electrically isolates and isolates the backing plate 284 from the process chamber 100 and is typically a ring formed of a dielectric or insulating material, such as aluminum oxide. Peripheral ledge 304 allows movement of plasma species and sputtered material through the gap between sputtering target 140 and isolator 310 to prevent penetration of low-angle sputtered deposits into the gap or molded to inhibit flow.

1 , the sputtering target 140 is coupled to one or both of a DC power source 146 and an RF power source 148 . The DC power source 149 may apply a bias voltage to the sputtering target 140 relative to the integral shield 201 , which may be electrically floating during the sputtering process. DC power source 146 supplies power to sputtering target 140 , integral shield 201 , substrate support 130 , and other chamber components connected to DC power source 146 , while RF power source ( 148 energizes the sputtering gas to form a plasma of the sputtering gas. The formed plasma impinges and bombards the sputtering surface 139 of the sputtering target 140 to sputter material from the sputtering surface 139 onto the substrate 104 . In some embodiments, the RF energy supplied by the RF power source 118 may range in frequency from about 2 MHz to about 60 MHz, or a ratio such as, for example, 2 MHz, 13.56 MHz, 27.12 MHz, or 60 MHz. -Limited frequencies can be used. In some embodiments, a plurality of (ie, two or more) RF power sources may be provided to provide RF energy of a plurality of the frequencies.

In some embodiments, the process chamber 100 may include a magnetic field generator 330 to shape a magnetic field around the sputtering target 140 to improve sputtering of the sputtering target 140 . The capacitively generated plasma may be enhanced by a magnetic field generator 330 , eg, a permanent magnet or electromagnetic coils capable of providing a magnetic field to the process chamber 100 , the process chamber including the substrate 104 . ) has a rotating magnetic field with an axis of rotation perpendicular to the plane of Additionally or alternatively, the process chamber 100 is configured to increase the ion density in a high-density plasma region adjacent to the sputtering target 140 to improve sputtering of the target material. A magnetic field generator 330 for generating a magnetic field near the target 140 may be included.

[0044] A gas delivery system 332 that provides gas from a gas supply 334 through conduits 336 having gas flow control valves 338, such as mass flow controllers, to pass a set flow rate of gas therethrough. Through this, the sputtering gas is introduced into the process chamber 100 . The gases are fed to a mixing manifold (not shown) where the gases are mixed to form the desired process gas composition, and to a gas distributor 340 having gas outlets for introducing the gas into the process chamber 100 . are fed The process gas may include a non-reactive gas, such as argon or xenon, that may energetically impinge on the sputtering target 140 and sputter material from the sputtering target 140 . The process gas may also include a reactive gas, such as one or more of an oxygen-containing gas and a nitrogen-containing gas, the reactive gas reacting with the sputtered material to form a layer on the substrate 104 . can do. The gas is then energized by the RF power source 148 to form a plasma to sputter the sputtering target 140 . The consumed process gas and by-products are exhausted from the process chamber 100 through an exhaust 342 . The exhaust 342 is an exhaust port 344 that receives the spent process gas and passes the spent gas through an exhaust conduit 346 having a throttle valve to control the pressure of the gas in the process chamber 100 . ) is included. The exhaust conduit 346 is connected to one or more exhaust pumps 348 .

Various components of the process chamber 100 may be controlled by the controller 350 . The controller 350 includes program code having sets of instructions for operating the components to process the substrate 104 . For example, the controller 350 may include a set of substrate positioning instructions for operating the substrate support 130 and a substrate transport mechanism; gas flow control command sets for operating the gas flow control valves to establish a flow of sputtering gas into the process chamber 100 ; gas pressure control instruction sets for operating an exhaust throttle valve to maintain pressure in the process chamber 100; gas energizer control instruction sets for operating the RF power source 148 to set the gas energizing power level; temperature control instruction sets for controlling the temperature control system of the heat transfer medium supply 180 or the substrate support 130 to control the flow rate of the heat transfer medium into the heat transfer channel 289; and program code including process monitoring instruction sets for monitoring a process in the process chamber 100 .

[0046] While the foregoing relates to embodiments of the present disclosure, other and additional embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure.

Claims (15)

A one-piece process kit shield comprising:
Cylindrical body having an upper portion and a lower portion, wherein the upper portion includes an adapter section, the adapter section extending radially outward, and for supporting the integral process kit shield on the walls of the chamber ( having a resting surface and a sealing surface upon which a chamber lid rests to seal an interior volume of the chamber when the integral process kit shield is positioned in the chamber;
a heat transfer channel extending through the upper portion; and
a cover ring section extending radially inwardly from the lower portion, an opening disposed through the cylindrical body and the cover ring section defining a process volume-facing surface of the integral process kit shield, the diameter of the process volume-facing surface decreases from the upper portion to the covering ring section, comprising
Integral process kit shield. The method of claim 1,
wherein the heat transfer channel is disposed in the adapter section;
Integral process kit shield. The method of claim 1,
wherein the sealing surface has a channel for receiving an isolator;
Integral process kit shield. 4. The method according to any one of claims 1 to 3,
a turbulence generating device disposed within the heat transfer channel;
Integral process kit shield. 5. The method of claim 4,
The turbulence generating device comprises:
a helically shaped body for inducing turbulence in the flow of heat transfer medium; and
a base configured to engage the walls of the heat transfer channel to prevent movement of the turbulence generating device as the heat transfer medium flows through and passes through the turbulence generating device;
Integral process kit shield. 4. The method according to any one of claims 1 to 3,
The integral process kit shield is formed of aluminum or stainless steel,
Integral process kit shield. A process chamber comprising:
a chamber wall defining an inner volume within the process chamber;
a sputtering target disposed in the upper section of the inner volume;
a substrate support having a support surface for supporting a substrate under the sputtering target; and
Including; an integrated process kit shield surrounding the sputtering target and the substrate support;
The integrated process kit shield,
a cylindrical body having an upper portion surrounding the sputtering target and a lower portion surrounding the substrate support, the upper portion comprising an adapter section, the adapter section extending radially outwardly and the integral on the chamber wall having a seating surface for supporting the process kit shield and a sealing surface upon which a chamber lid rests to seal the inner volume;
a heat transfer channel extending through the upper portion; and
a cover ring section extending radially inwardly from the lower portion and surrounding the substrate support, the opening disposed through the cylindrical body and the cover ring section defining a process volume-facing surface of the integral process kit shield, the process the diameter of the volume-facing surface decreases from the upper portion to the covering ring section;
process chamber. 8. The method of claim 7,
wherein the heat transfer channel is disposed in the adapter section and the sealing surface has a channel for receiving an isolator;
process chamber. 9. The method of claim 8,
wherein the channels in the sealing surface define a bottom surface comprising an O-ring groove to receive an O-ring to form a vacuum seal between the adapter section and the chamber lid.
process chamber. 9. The method of claim 8,
a first portion of the adapter section is disposed within the inner volume and a second portion of the adapter section is disposed outside the inner volume;
process chamber. 11. The method according to any one of claims 7 to 10,
The integrated process kit shield,
a turbulence generating device disposed within the heat transfer channel;
process chamber. 11. The method according to any one of claims 7 to 10,
The substrate support is vertically movable,
and a deposition ring movable with the substrate support and disposed on the substrate support, wherein the covering ring section comprises the deposition ring to reduce formation of sputter deposits on a periphery of the substrate support. configured to interface with
process chamber. 11. The method according to any one of claims 7 to 10,
a perimeter of the sputtering target, adjacent the upper portion, is configured to form a convoluted gap having a dark space region;
process chamber. delete delete

Images