KR102442541B1 - 셔터 디스크 어셈블리, 반도체 가공 장치와 방법 - Google Patents

셔터 디스크 어셈블리, 반도체 가공 장치와 방법 Download PDF

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Publication number
KR102442541B1
KR102442541B1 KR1020207021459A KR20207021459A KR102442541B1 KR 102442541 B1 KR102442541 B1 KR 102442541B1 KR 1020207021459 A KR1020207021459 A KR 1020207021459A KR 20207021459 A KR20207021459 A KR 20207021459A KR 102442541 B1 KR102442541 B1 KR 102442541B1
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KR
South Korea
Prior art keywords
base
shutter
pressing disk
shutter pressing
disk
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KR1020207021459A
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English (en)
Korean (ko)
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KR20200096985A (ko
Inventor
동동 리
하오 구오
멍신 짜오
Original Assignee
베이징 나우라 마이크로일렉트로닉스 이큅먼트 씨오., 엘티디.
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Publication of KR20200096985A publication Critical patent/KR20200096985A/ko
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Physical Vapour Deposition (AREA)
KR1020207021459A 2018-01-29 2018-11-27 셔터 디스크 어셈블리, 반도체 가공 장치와 방법 KR102442541B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201810085194.8 2018-01-29
CN201810085194.8A CN108060406B (zh) 2018-01-29 2018-01-29 遮挡压盘组件、半导体加工装置和方法
PCT/CN2018/117701 WO2019144696A1 (zh) 2018-01-29 2018-11-27 遮挡盘组件、半导体加工装置和方法

Publications (2)

Publication Number Publication Date
KR20200096985A KR20200096985A (ko) 2020-08-14
KR102442541B1 true KR102442541B1 (ko) 2022-09-13

Family

ID=62134274

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KR1020207021459A KR102442541B1 (ko) 2018-01-29 2018-11-27 셔터 디스크 어셈블리, 반도체 가공 장치와 방법

Country Status (6)

Country Link
JP (1) JP7139454B2 (ja)
KR (1) KR102442541B1 (ja)
CN (1) CN108060406B (ja)
SG (1) SG11202006977QA (ja)
TW (1) TWI752283B (ja)
WO (1) WO2019144696A1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108060406B (zh) * 2018-01-29 2023-09-08 北京北方华创微电子装备有限公司 遮挡压盘组件、半导体加工装置和方法
JP7439253B2 (ja) * 2019-10-28 2024-02-27 アプライド マテリアルズ インコーポレイテッド アイドルシールド、堆積装置、堆積システム、ならびに組み立てる方法および動作させる方法
CN111627839A (zh) * 2020-06-04 2020-09-04 厦门通富微电子有限公司 烤盘用限位装置、烤盘以及半导体处理设备
CN112011774B (zh) * 2020-08-25 2022-09-16 北京北方华创微电子装备有限公司 半导体设备及其半导体腔室以及半导体冷却方法
CN112331609B (zh) * 2020-10-26 2023-12-22 北京北方华创微电子装备有限公司 半导体工艺设备中的加热基座及半导体工艺设备
CN113322440B (zh) * 2021-05-26 2022-08-16 北京北方华创微电子装备有限公司 半导体工艺设备及其工艺腔室
CN114959600B (zh) * 2022-05-31 2023-08-18 北京北方华创微电子装备有限公司 工艺腔室及半导体工艺设备

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JP2010126798A (ja) * 2008-11-28 2010-06-10 Canon Anelva Corp スパッタリング装置
US20120193216A1 (en) * 2009-10-05 2012-08-02 Canon Anelva Corporation Substrate cooling device, sputtering apparatus and method for manufacturing electronic device
US20140271081A1 (en) * 2013-03-15 2014-09-18 Applied Materials, Inc. Shutter blade and robot blade with cte compensation
US20140308028A1 (en) 2011-12-27 2014-10-16 Canon Anelva Corporation Substrate heat treatment apparatus
US20150075971A1 (en) 2013-09-18 2015-03-19 Tokyo Electron Limited Dual-target sputter deposition with controlled phase difference between target powers
US20150187546A1 (en) 2012-05-31 2015-07-02 Tokyo Electron Limited Vacuum-Processing Apparatus, Vacuum-Processing Method, and Storage Medium

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JP3905584B2 (ja) * 1996-10-07 2007-04-18 アプライド マテリアルズ インコーポレイテッド スパッタ装置及びコリメータ付着物の処理方法
JP4902052B2 (ja) * 2001-04-05 2012-03-21 キヤノンアネルバ株式会社 スパッタリング装置
TWI431668B (zh) * 2009-06-24 2014-03-21 Ulvac Inc 真空成膜裝置及真空成膜裝置之擋板位置檢測方法
CN102822379A (zh) * 2010-03-24 2012-12-12 佳能安内华股份有限公司 用于电子装置的制造方法和溅射方法
US8404048B2 (en) * 2011-03-11 2013-03-26 Applied Materials, Inc. Off-angled heating of the underside of a substrate using a lamp assembly
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KR101891990B1 (ko) * 2013-11-18 2018-08-28 캐논 아네르바 가부시키가이샤 기판 처리 장치 및 방법
CN105097604B (zh) * 2014-05-05 2018-11-06 北京北方华创微电子装备有限公司 工艺腔室
JP2016053202A (ja) * 2014-09-04 2016-04-14 東京エレクトロン株式会社 処理装置
CN106298417B (zh) * 2015-05-14 2018-08-24 北京北方华创微电子装备有限公司 反应腔室及半导体加工设备
CN106876316A (zh) * 2015-12-14 2017-06-20 北京北方微电子基地设备工艺研究中心有限责任公司 压环及半导体加工设备
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CN108060406B (zh) * 2018-01-29 2023-09-08 北京北方华创微电子装备有限公司 遮挡压盘组件、半导体加工装置和方法

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US20090190908A1 (en) 2007-09-03 2009-07-30 Canon Anelva Corporation Apparatus for heat-treating substrate and method for heat-treating substrate
JP2010126798A (ja) * 2008-11-28 2010-06-10 Canon Anelva Corp スパッタリング装置
US20120193216A1 (en) * 2009-10-05 2012-08-02 Canon Anelva Corporation Substrate cooling device, sputtering apparatus and method for manufacturing electronic device
US20140308028A1 (en) 2011-12-27 2014-10-16 Canon Anelva Corporation Substrate heat treatment apparatus
US20150187546A1 (en) 2012-05-31 2015-07-02 Tokyo Electron Limited Vacuum-Processing Apparatus, Vacuum-Processing Method, and Storage Medium
US20140271081A1 (en) * 2013-03-15 2014-09-18 Applied Materials, Inc. Shutter blade and robot blade with cte compensation
US20150075971A1 (en) 2013-09-18 2015-03-19 Tokyo Electron Limited Dual-target sputter deposition with controlled phase difference between target powers

Also Published As

Publication number Publication date
JP2021512224A (ja) 2021-05-13
CN108060406B (zh) 2023-09-08
CN108060406A (zh) 2018-05-22
TWI752283B (zh) 2022-01-11
SG11202006977QA (en) 2020-08-28
TW201933442A (zh) 2019-08-16
KR20200096985A (ko) 2020-08-14
WO2019144696A1 (zh) 2019-08-01
JP7139454B2 (ja) 2022-09-20

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