KR102441106B1 - 박막 광결합기들을 이용하여 형성된 능동 매트릭스 백플레인 - Google Patents

박막 광결합기들을 이용하여 형성된 능동 매트릭스 백플레인 Download PDF

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KR102441106B1
KR102441106B1 KR1020160056203A KR20160056203A KR102441106B1 KR 102441106 B1 KR102441106 B1 KR 102441106B1 KR 1020160056203 A KR1020160056203 A KR 1020160056203A KR 20160056203 A KR20160056203 A KR 20160056203A KR 102441106 B1 KR102441106 B1 KR 102441106B1
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South Korea
Prior art keywords
optical switch
backplane
light
light source
input
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Korean (ko)
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KR20160140377A (ko
Inventor
젱핑 루
데이비드 케이. 비겔슨
패트릭 야스오 마에다
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팔로 알토 리서치 센터 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/005—Projectors using an electronic spatial light modulator but not peculiar thereto
    • G03B21/008—Projectors using an electronic spatial light modulator but not peculiar thereto using micromirror devices
    • H01L27/3244—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Chemical & Material Sciences (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Theoretical Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Light Receiving Elements (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Liquid Crystal (AREA)
KR1020160056203A 2015-05-29 2016-05-09 박막 광결합기들을 이용하여 형성된 능동 매트릭스 백플레인 Active KR102441106B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/725,472 US10192892B2 (en) 2015-05-29 2015-05-29 Active matrix backplane formed using thin film optocouplers
US14/725,472 2015-05-29

Publications (2)

Publication Number Publication Date
KR20160140377A KR20160140377A (ko) 2016-12-07
KR102441106B1 true KR102441106B1 (ko) 2022-09-07

Family

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KR1020160056203A Active KR102441106B1 (ko) 2015-05-29 2016-05-09 박막 광결합기들을 이용하여 형성된 능동 매트릭스 백플레인

Country Status (3)

Country Link
US (1) US10192892B2 (https=)
JP (2) JP2016225612A (https=)
KR (1) KR102441106B1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10558204B2 (en) 2016-09-19 2020-02-11 Palo Alto Research Center Incorporated System and method for scalable real-time micro-object position control with the aid of a digital computer
US10397529B2 (en) * 2017-04-28 2019-08-27 Palo Alto Research Center Incorporated Transparent optical coupler active matrix array
CN109962085B (zh) * 2017-12-25 2023-08-01 上海耕岩智能科技有限公司 一种监控显示像素发光强度的方法和装置
CN109274425B (zh) * 2018-11-02 2021-11-30 国网四川省电力公司广安供电公司 一种智能跳纤系统的设计方法
US12020399B2 (en) 2020-11-16 2024-06-25 Xerox Corporation System and method for multi-object micro-assembly control with the aid of a digital computer
US11893327B2 (en) 2020-12-14 2024-02-06 Xerox Corporation System and method for machine-learning enabled micro-assembly control with the aid of a digital computer
US11921488B2 (en) 2020-12-15 2024-03-05 Xerox Corporation System and method for machine-learning-enabled micro-object density distribution control with the aid of a digital computer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012121372A1 (ja) * 2011-03-10 2012-09-13 シャープ株式会社 表示素子及び電子機器

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US4779126A (en) 1983-11-25 1988-10-18 International Rectifier Corporation Optically triggered lateral thyristor with auxiliary region
JPS60193384A (ja) * 1984-03-15 1985-10-01 Toshiba Corp 光スイツチングデバイス及び光スイツチング表示装置
KR910007142A (ko) 1988-09-30 1991-04-30 미다 가쓰시게 박막 광트랜지스터와 그것을 사용한 광센서어레이
US5200634A (en) 1988-09-30 1993-04-06 Hitachi, Ltd. Thin film phototransistor and photosensor array using the same
US5264720A (en) 1989-09-22 1993-11-23 Nippondenso Co., Ltd. High withstanding voltage transistor
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US5083175A (en) * 1990-09-21 1992-01-21 Xerox Corporation Method of using offset gated gap-cell thin film device as a photosensor
JPH06266318A (ja) * 1993-03-17 1994-09-22 Nippon Telegr & Teleph Corp <Ntt> アクティブマトリクス形液晶装置の駆動方法
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JP4122503B2 (ja) * 2006-11-30 2008-07-23 イーイメージテクノロジー株式会社 Ｌｅｄディスプレイ
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Publication number Publication date
JP6794563B2 (ja) 2020-12-02
JP2016225612A (ja) 2016-12-28
KR20160140377A (ko) 2016-12-07
US20160351584A1 (en) 2016-12-01
JP2020123732A (ja) 2020-08-13
US10192892B2 (en) 2019-01-29

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