KR102401218B9 - 페로브스카이트 태양전지의 제조방법 및 그로부터 제조된 페로브스카이트 태양전지 - Google Patents

페로브스카이트 태양전지의 제조방법 및 그로부터 제조된 페로브스카이트 태양전지

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Publication number
KR102401218B9
KR102401218B9 KR1020200084012A KR20200084012A KR102401218B9 KR 102401218 B9 KR102401218 B9 KR 102401218B9 KR 1020200084012 A KR1020200084012 A KR 1020200084012A KR 20200084012 A KR20200084012 A KR 20200084012A KR 102401218 B9 KR102401218 B9 KR 102401218B9
Authority
KR
South Korea
Prior art keywords
solar cell
perovskite solar
matufacturing
same method
manufactured
Prior art date
Application number
KR1020200084012A
Other languages
English (en)
Other versions
KR20220006264A (ko
KR102401218B1 (ko
Inventor
조안나
Original Assignee
한화솔루션 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한화솔루션 주식회사 filed Critical 한화솔루션 주식회사
Priority to KR1020200084012A priority Critical patent/KR102401218B1/ko
Priority to EP21838202.6A priority patent/EP4160709A4/en
Priority to US18/011,611 priority patent/US20230363183A1/en
Priority to CN202180046920.5A priority patent/CN115777240A/zh
Priority to JP2022579919A priority patent/JP2023538996A/ja
Priority to PCT/KR2021/008061 priority patent/WO2022010147A1/ko
Publication of KR20220006264A publication Critical patent/KR20220006264A/ko
Application granted granted Critical
Publication of KR102401218B1 publication Critical patent/KR102401218B1/ko
Publication of KR102401218B9 publication Critical patent/KR102401218B9/ko

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H10K30/821—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/86—Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/811—Of specified metal oxide composition, e.g. conducting or semiconducting compositions such as ITO, ZnOx
    • Y10S977/812—Perovskites and superconducting composition, e.g. BaxSr1-xTiO3

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Photovoltaic Devices (AREA)
KR1020200084012A 2020-07-08 2020-07-08 페로브스카이트 태양전지의 제조방법 및 그로부터 제조된 페로브스카이트 태양전지 KR102401218B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020200084012A KR102401218B1 (ko) 2020-07-08 2020-07-08 페로브스카이트 태양전지의 제조방법 및 그로부터 제조된 페로브스카이트 태양전지
EP21838202.6A EP4160709A4 (en) 2020-07-08 2021-06-28 METHOD FOR MANUFACTURING PEROVSKITE SOLAR CELL AND PEROVSKITE SOLAR CELL MANUFACTURED THEREBY
US18/011,611 US20230363183A1 (en) 2020-07-08 2021-06-28 Manufacturing method for perovskite solar cell and perovskite solar cell manufactured by the same method
CN202180046920.5A CN115777240A (zh) 2020-07-08 2021-06-28 制造钙钛矿太阳能电池的方法及由所述方法制造的钙钛矿太阳能电池
JP2022579919A JP2023538996A (ja) 2020-07-08 2021-06-28 ペロブスカイト太陽電池の製造方法及びそれから製造されたペロブスカイト太陽電池
PCT/KR2021/008061 WO2022010147A1 (ko) 2020-07-08 2021-06-28 페로브스카이트 태양전지의 제조방법 및 그로부터 제조된 페로브스카이트 태양전지

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020200084012A KR102401218B1 (ko) 2020-07-08 2020-07-08 페로브스카이트 태양전지의 제조방법 및 그로부터 제조된 페로브스카이트 태양전지

Publications (3)

Publication Number Publication Date
KR20220006264A KR20220006264A (ko) 2022-01-17
KR102401218B1 KR102401218B1 (ko) 2022-05-23
KR102401218B9 true KR102401218B9 (ko) 2023-02-23

Family

ID=79552523

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020200084012A KR102401218B1 (ko) 2020-07-08 2020-07-08 페로브스카이트 태양전지의 제조방법 및 그로부터 제조된 페로브스카이트 태양전지

Country Status (6)

Country Link
US (1) US20230363183A1 (ko)
EP (1) EP4160709A4 (ko)
JP (1) JP2023538996A (ko)
KR (1) KR102401218B1 (ko)
CN (1) CN115777240A (ko)
WO (1) WO2022010147A1 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117178650A (zh) * 2022-03-09 2023-12-05 宁德时代新能源科技股份有限公司 钙钛矿太阳能电池及其制备方法
KR20230167963A (ko) 2022-06-03 2023-12-12 한국전력공사 페로브스카이트 태양전지 및 이의 제조 방법
KR20240000198A (ko) 2022-06-23 2024-01-02 고려대학교 산학협력단 페로브스카이트 광전소자 및 이의 제조 방법
CN115083787B (zh) * 2022-06-23 2024-09-10 南京邮电大学 一种超薄氧化物修饰的半导体电极及其制备方法
CN116081711A (zh) * 2022-12-08 2023-05-09 武汉大学 油酸盐修饰的氧化镍纳米晶材料及其制备方法与应用
KR20240136027A (ko) 2023-03-06 2024-09-13 고려대학교 산학협력단 전자 전달층 용액의 제조 방법, 이를 이용한 전자 전달층의 제조 방법, 이를 통하여 제조된 전자 전달층, 이를 포함하는 페로브스카이트 태양전지의 제조 방법 및 이를 통하여 제조된 페로브스카이트 태양전지
TWI844323B (zh) * 2023-03-29 2024-06-01 國立陽明交通大學 鈣鈦礦光電裝置及應用於鈣鈦礦光電裝置的自適應傳輸層結構

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008016868A (ja) * 2003-12-16 2008-01-24 Matsushita Electric Ind Co Ltd 有機エレクトロルミネッセント素子およびその製造方法
WO2009133903A1 (ja) * 2008-04-28 2009-11-05 大日本印刷株式会社 正孔注入輸送層を有するデバイス、及びその製造方法、並びに正孔注入輸送層形成用インク
WO2013161166A1 (ja) * 2012-04-27 2013-10-31 パナソニック株式会社 有機ｅｌ素子、およびそれを備える有機ｅｌパネル、有機ｅｌ発光装置、有機ｅｌ表示装置
KR20170040708A (ko) * 2015-10-05 2017-04-13 한국에너지기술연구원 양면 투명전극을 활용한 높은 내구성을 가지는 유-무기 하이브리드 태양전지 및 이의 제조 방법
WO2017106811A1 (en) * 2015-12-17 2017-06-22 University Of Florida Research Foundation, Inc. Polymer passivated metal oxide surfaces and organic electronic devices therefrom

Also Published As

Publication number Publication date
CN115777240A (zh) 2023-03-10
JP2023538996A (ja) 2023-09-13
US20230363183A1 (en) 2023-11-09
WO2022010147A1 (ko) 2022-01-13
KR20220006264A (ko) 2022-01-17
KR102401218B1 (ko) 2022-05-23
EP4160709A4 (en) 2023-12-06
EP4160709A1 (en) 2023-04-05

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