KR102387082B1 - Supporting substrate for semiconductor device, semiconductor apparatus with the same and method of manufacturing the same - Google Patents

Abstract

The present disclosure provides a method of manufacturing a support substrate for a semiconductor device, the method comprising: preparing a first substrate having a first surface and a second surface opposite to the first surface; forming a groove in the first substrate from the first surface side to the second surface side; forming a conductive part in the groove; bonding a second substrate to the first substrate from the first side side; And, on the second surface side, the step of forming a first conductive pad so as to be conductive with the conductive portion; Method for manufacturing a support substrate for a semiconductor device, characterized in that comprising; and the support substrate for a semiconductor device manufactured by the method , to a semiconductor device including the same, and to a method of manufacturing the semiconductor device.

Description

Support substrate for semiconductor device, semiconductor device including same, and method for manufacturing same

The present disclosure generally relates to a support substrate for a semiconductor device, a semiconductor device including the same, and a method for manufacturing the same, and in particular, a support substrate for a semiconductor device capable of preventing cracks or breakage of the semiconductor device, and a semiconductor device including the same and to a method for manufacturing the same. Here, the semiconductor device means a semiconductor device using a pn junction, and may include a semiconductor optical device (eg, a semiconductor light emitting device, a semiconductor light receiving device). In addition, the semiconductor light emitting device refers to a semiconductor optical device that generates light through recombination of electrons and holes, for example, a group III nitride semiconductor light emitting device. The group III nitride semiconductor is composed of a compound of Al(x)Ga(y)In(1-x-y)N (0=x=1, 0=y=1, 0=x+y=1). In addition, a GaAs-based semiconductor light emitting device used for red light emission may be exemplified.

Herein, background information related to the present disclosure is provided, and they do not necessarily mean prior art (This section provides background information related to the present disclosure which is not necessarily prior art).

1 is a view showing an example of a semiconductor light emitting device chip presented in US Patent No. 7,262,436, the semiconductor light emitting device chip is a substrate 100, an n-type semiconductor layer 300 grown on the substrate 100, n The active layer 400 grown on the semiconductor layer 300, the p-type semiconductor layer 500 grown on the active layer 400, the p-type semiconductor layer 500 formed on the p-type semiconductor layer 500 and for reflecting light toward the substrate 100 It includes layered electrodes 901 , 902 , and 903 , and an electrode 800 serving as a bonding pad on the etched and exposed first semiconductor layer 300 . The electrode 901 functions as a reflective film, the electrode 902 functions as a barrier, and the electrode 903 functions to facilitate bonding with an external electrode. In this type of semiconductor light emitting device chip, the electrode 800 and the electrode 903 are directly connected (without wire bonding) to an SMD type package, a printed circuit board (PCB), a chip-on board (COB), a submount, etc. It is in the form of a flip chip (Flip Chip).

2 is a view showing an example of a semiconductor light emitting device chip presented in Japanese Patent Application Laid-Open No. 2006-120913, wherein the semiconductor light emitting device chip includes a substrate 100, a buffer layer 200 grown on the substrate 100, and a buffer layer ( 200) an n-type semiconductor layer 300 grown on the n-type semiconductor layer 300, an active layer 400 grown on the n-type semiconductor layer 300, a p-type semiconductor layer 500 grown on the active layer 400, a p-type semiconductor layer 500 The light-transmitting conductive layer 600 formed thereon and having a current diffusion function, the p-side bonding pad 700 formed on the light-transmitting conductive layer 600 , and the n-side bonding pad formed on the etched and exposed n-type semiconductor layer 300 . (800). In addition, a distributed Bragg reflector (DBR) and a metal reflective film 904 are provided on the transmissive conductive film 600 . The n-type semiconductor layer 300 and the p-type semiconductor layer 500 may each consist of a plurality of layers, and although not preferred, the buffer layer 200 and the light-transmitting conductive film 600 may be omitted, and the n-type semiconductor layer The positions of the (300) and the p-type semiconductor layer 500 may be interchanged.

3 is a view showing an example of a semiconductor light emitting device chip presented in International Patent Application Laid-Open No. WO2014/014298, wherein the semiconductor light emitting device chip includes a substrate 100 , a buffer layer 200 grown on the substrate 100 , and a buffer layer 200 . ) on the n-type semiconductor layer 300 grown on the n-type semiconductor layer 300 , the active layer 400 grown on the n-type semiconductor layer 300 , the p-type semiconductor layer 500 grown on the active layer 400 , the p-type semiconductor layer 500 on A translucent conductive film 600 that is formed and has a current diffusion function, a non-conductive reflective film 900 formed on the transmissive conductive film 600 and formed to reflect the light generated by the active layer 400 (eg DBR), a non-conductive reflective film ( It includes an electrode 700 and an electrode 800 formed on the 900 . The electrode 700 and the electrode 800 are in electrical communication with the n-type semiconductor layer 300 and the p-type semiconductor layer 500 through the conductive portion 710 and the conductive portion 810, respectively.

4 is a view showing an example of the semiconductor light emitting device shown in Japanese Patent Application Laid-Open No. 2001-358371. The semiconductor light emitting device chip is a substrate 100 and an n-type semiconductor layer 300 grown on the substrate 100. , the active layer 400 grown on the n-type semiconductor layer 300 , the p-type semiconductor layer 500 grown on the active layer 400 , the p-side electrode 700 formed on the p-type semiconductor layer 500 , and etched It includes an n-side electrode 800 formed on the exposed n-type semiconductor layer 300 . An insulating film 9 is provided between the electrode 700 and the electrode 800 . In addition to the semiconductor light emitting device chip, the semiconductor light emitting device includes a body (1), lead frames (2,3) formed in the body (1), and a mold portion (5) forming a cavity (4) on the lead frames (2,3) And it includes an encapsulant 1000 surrounding the semiconductor light emitting device chip. The encapsulant 1000 may include a phosphor, a light scattering agent, and the like. The electrodes 700 and 800 are fixed to the lead frames 2 and 3 through the bonding layer 7 . Methods such as bonding using stud bumps, bonding using a conductive adhesive, bonding using soldering, eutectic bonding, etc. may be used for electrical connection between the electrodes 700 and 800 and the lead frames 2 and 3, and there are special limitations. not.

5 is a view showing another example of a conventional semiconductor light emitting device, in a state in which the substrate 100 of the semiconductor light emitting device chip is fixed to the lead frame 2 using the wire 8, the lead frames 2 and 3 ) and a semiconductor light emitting device electrically connected to the present invention. In the case of using wire bonding, even if heat is generated in the device, since the substrate 100 exists between the plurality of semiconductor layers 300, 400, 500 and the lead frame 2, 3, a plurality of semiconductor layers 300, 400, 500 made of a semiconductor and a metal Even if there is a difference in thermal expansion between the lead frames 2 and 3 made of In general, this type of chip is referred to as a lateral chip. For example, in the case of a group III nitride semiconductor light emitting device, the total thickness of the plurality of semiconductor layers 300 , 400 , and 500 is 10 μm or less, and the thickness of the substrate 100 (eg, sapphire) is generally 80 to 150 μm.

Returning to FIG. 4 , when the semiconductor light emitting device chip is flip-chip bonded, the plurality of semiconductor layers 300 , 400 , 500 directly face the lead frames 2 and 3 , and the metal lead frames 2 and 3 due to heat generation. ) is expanded, the possibility of cracks or cracks occurring in the plurality of semiconductor layers 300 , 400 , and 500 increases. In addition, in recent years, the use of flip chips that can be driven with high current compared to lateral chips is expanding, and in the case of a chip using a high current, that is, high power, the amount of heat generated in the device is large, so that a plurality of semiconductor layers (300, 400, 500) Cracks or cracks are more likely to become a problem.

This will be described at the end of 'Specific Contents for Implementation of the Invention'.

Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure (This section provides a general summary of the disclosure and is not a comprehensive disclosure of its full scope or all of its features).

According to one aspect according to the present disclosure (According to one aspect of the present disclosure), in a method of manufacturing a support substrate for a semiconductor device, a first substrate having a first surface and a second surface opposite to the first surface preparing; forming a groove in the first substrate from the first surface side to the second surface side; forming a conductive part in the groove; bonding a second substrate to the first substrate from the first side side; And, there is provided a method of manufacturing a support substrate for a semiconductor device comprising the; forming a first conductive pad to be conductive with the conductive portion on the second surface side.

According to another aspect of the present disclosure (According to another aspect of the present disclosure), in a method of manufacturing a support substrate for a semiconductor device, a first substrate having a first surface and a second surface opposite to the first surface to prepare; forming a groove in the first substrate from the first surface side to the second surface side; forming a conductive part in the groove; forming at least one conductive pad on the conductive portion; And, there is provided a method of manufacturing a support substrate for a semiconductor device comprising the; bonding the second substrate to the first substrate from the first surface side.

According to another aspect of the present disclosure (According to another aspect of the present disclosure), in a semiconductor device, a semiconductor device grown using a group III nitride semiconductor having a first coefficient of thermal expansion as a growth substrate; and a first substrate having a second coefficient of thermal expansion having a difference of within 2 ppm from the first coefficient of thermal expansion and coupled to a semiconductor device, comprising a conductive portion formed through the first substrate to provide an electrical path to the semiconductor device A semiconductor device comprising: a first substrate is provided.

According to another aspect according to the present disclosure (According to another aspect of the present disclosure), in a semiconductor device, a semiconductor device grown using a growth substrate made of GaN; and a first substrate made of AlN and coupled to a semiconductor device, the first substrate having a conductive portion formed through the first substrate to provide an electrical path to the semiconductor device; A device is provided.

According to another aspect of the present disclosure (According to another aspect of the present disclosure), there is provided a semiconductor device, comprising: a semiconductor device grown using a growth substrate made of a group III nitride semiconductor; and a first substrate coupled to the semiconductor device, the first substrate having a conductive portion formed through the first substrate to provide an electrical path to the semiconductor device, wherein the first substrate has a first surface and a first It has a second surface opposite to the surface and a side surface connecting the first surface and the second surface, the semiconductor device is coupled to the second surface side, and the first surface and the second surface are spaced apart from the side surface to crack due to laser irradiation A semiconductor device is provided, characterized in that a rough surface formed by

According to another aspect according to the present disclosure (According to another aspect of the present disclosure), in a method of manufacturing a semiconductor device, a first substrate having a first surface and a second surface opposite to the first surface are prepared to do; forming a groove in the first substrate from the first surface side to the second surface side; forming a conductive part in the groove; bonding a second substrate to the first substrate from the first side side; In addition, there is provided a method of manufacturing a semiconductor device comprising: bonding a semiconductor device to be grown using a growth substrate made of a group III nitride semiconductor to the first substrate so as to be conductive with the conductive portion.

According to another aspect of the present disclosure (According to another aspect of the present disclosure), there is provided a semiconductor device, comprising: a semiconductor device grown using a growth substrate made of a group III nitride semiconductor having a first coefficient of thermal expansion; and a first substrate having a second coefficient of thermal expansion smaller than the first coefficient of thermal expansion and coupled to the semiconductor device, the first substrate having a conductive portion formed through the first substrate to provide an electrical path to the semiconductor device; There is provided a semiconductor device comprising:

This will be described at the end of 'Specific Contents for Implementation of the Invention'.

1 is a view showing an example of a semiconductor light emitting device chip presented in US Patent No. 7,262,436;
2 is a view showing an example of a semiconductor light emitting device chip presented in Japanese Patent Laid-Open No. 2006-120913;
3 is a view showing an example of a semiconductor light emitting device chip presented in International Patent Publication No. WO2014/014298;
4 is a view showing an example of the semiconductor light emitting device shown in Japanese Patent Laid-Open No. 2001-358371;
5 is a view showing another example of a conventional semiconductor light emitting device;
6 and 7 are views showing an example of a method of manufacturing a support substrate for a semiconductor device according to the present disclosure;
8 and 9 are views illustrating an example of a method of manufacturing a semiconductor device according to the present disclosure;
10 is a view showing another example of a method of manufacturing a support substrate for a semiconductor device according to the present disclosure;
11 and 12 are views illustrating another example of a method of manufacturing a semiconductor device according to the present disclosure;
13 is a diagram illustrating another example of a method of manufacturing a semiconductor device according to the present disclosure;
14 is a diagram illustrating another example of a method of manufacturing a semiconductor device according to the present disclosure;
15 is a view showing another example of a semiconductor device according to the present disclosure;
16 is a diagram illustrating another example of a method of manufacturing a semiconductor device according to the present disclosure;
17 is a diagram illustrating another example of a method of manufacturing a semiconductor device according to the present disclosure;
18 is a diagram illustrating another example of a method of manufacturing a semiconductor device according to the present disclosure;

Hereinafter, the present disclosure will be described in detail with reference to the accompanying drawings (The present disclosure will now be described in detail with reference to the accompanying drawing(s)).

6 and 7 are views illustrating an example of a method of manufacturing a support substrate for a semiconductor device according to the present disclosure, and as shown in FIG. 6 , a first substrate 10 is prepared. The first substrate 10 includes a first surface 11 , a second surface 12 , and a side surface 13 connecting the first surface 11 and the second surface 12 . Next, a groove 14 is formed on the first surface 11 side. The shape of the groove 14 is not particularly limited, and may have a circular shape, a polygonal shape, a slit, a trench shape, or the like. That is, it may have an elongated shape or a shape of an independent concave portion. Next, the conductive portion 15 is formed in the groove 14 . Preferably, the conductive pad 16 is formed on the conductive portion 15 . The conductive portion 15 and the conductive pad 16 may be formed in a separate process or may be formed in a single process.

Next, as shown in FIG. 7 , the second substrate 17 is bonded to the first substrate 10 using the bonding layer 18 . Next, the thickness of the first substrate 10 is reduced by polishing or the like on the second surface 12 side. Preferably, a conductive pad 19 is formed on the conductive portion 15 . If the second substrate 17 has physical properties that can be directly attached to the first substrate 10 , the bonding layer 18 may be omitted. If necessary, before or after forming the conductive pad 19 , a reflective layer or an insulating layer 12a may be formed on the first substrate 10 .

8 and 9 are views illustrating an example of a method of manufacturing a semiconductor device according to the present disclosure, and will be described using a semiconductor light emitting device as an example. As shown in FIG. 8 , the semiconductor light emitting device chip 20 is fixed to the first substrate 10 . The semiconductor light emitting device chip 20 includes a growth substrate 21 (eg, Al ₂ O ₃ ), a first semiconductor layer 22 having a first conductivity (eg, n-type GaN), and a second conductivity different from the first conductivity. A second semiconductor layer 23 (eg, p-type GaN), an active layer 24 interposed between the first semiconductor layer 22 and the second semiconductor layer 23 and generating light through recombination of electrons and holes; eg: InGaN/(In)(Al)GaN multi-quantum well structure), and a first electrode 25 and a second electrode 26 electrically connected to the first semiconductor layer 22 and the second semiconductor layer 23, respectively to provide The semiconductor light emitting device chip 20 may be one of the semiconductor light emitting device chips shown in FIGS. 1 to 3 , and is not particularly limited as long as it is in the form of a flip chip. The first electrode 25 and the second electrode 26 are fixed to the corresponding conductive portion 15 . The conductive portion 15 functions as an electrical passage and a thermal passage. Preferably, the encapsulant 27 is formed to cover the semiconductor light emitting device chip 20 . Of course, the encapsulant 27 may include a phosphor and/or a light scattering agent. Preferably, a portion of the encapsulant 27 is removed so that the side of the encapsulant 27 is exposed. This is to help the cutting process to be described later, or to make the encapsulant 27 conform to the shape of the semiconductor light emitting device chip 20 . A method such as cutting or sawing may be used to remove the encapsulant 27 . In addition, before covering the semiconductor light emitting device chip 20 with the encapsulant 27 , the mold is placed on the first substrate 10 in advance according to the shape of the encapsulant 27 to be removed, and then the encapsulant 27 is formed. method can also be used. Although one conductive portion 15 may correspond to each of the electrodes 25 and 26 , of course, one electrode may be coupled to a plurality of conductive portions 15 . After the electrodes 25 and 26 and the conductive part 15 or the electrodes 25 and 26 and the conductive pad 19 are aligned, they may be bonded through thermocompression bonding.

Next, as shown in FIG. 9 , the second substrate 17 is separated from the first substrate 10 . Next, the first substrate 10 is cut to include the semiconductor light emitting device chip 20 . Preferably, a laser 28 is irradiated into the first substrate 10 to form cracks 29 , and then, through a breaking process, the first substrate 10 is cut by cutting the semiconductor light emitting device chip 20 . And by reducing mechanical, chemical and/or thermal damage to the encapsulant 27 , it is possible to cut the first substrate 10 . In the case of using a mechanical cutting method such as sawing, it is also possible to cut the first substrate 10 without separating the second substrate 17 from the first substrate 10, the second substrate 17 It is also possible to cut together, but removing the second substrate 17 after cutting only the first substrate 10 has a process advantage. In the process of separating the second substrate 17 from the first substrate 10, by removing the bonding layer 18 by etching or the like, it is also possible to separate both. In the example shown in FIG. 9 , a portion of the second surface 12 of the first substrate 10 is exposed, and the conductive portion 15 including the conductive pad 19 is covered with the encapsulant 27 .

10 is a view showing another example of a method of manufacturing a support substrate for a semiconductor device according to the present disclosure, before bonding the second substrate 17 to the first substrate 10, first the first substrate 10 A groove 14 is formed so as to pass through, a conductive portion 15 is formed next, and then the second substrate 17 is bonded to the first substrate 10 using the bonding layer 18 . The subsequent process is the same. Preferably, conductive pads 16 and 19 are formed on at least one side of the conductive part 15 . After the groove 14 is formed so as not to penetrate the first substrate 10 , the conductive part 15 is formed, and through polishing, the groove 14 has a shape penetrating the first substrate 10 . It is also possible to

11 and 12 are views illustrating still another example of a method of manufacturing a semiconductor device according to the present disclosure, and will be described using a semiconductor light emitting device as an example. 11 , the semiconductor light emitting device chip 20 is fixed to the first substrate 10 , and then, before forming the encapsulant 27 , a dam is next to the semiconductor light emitting device chip 20 . (30) is formed first. Next, the semiconductor light emitting device chip 20 is covered with the encapsulant 27 . The dam 30 functions as a reflective film or the like.

Next, as shown in FIG. 12 , the whole of the dam 30 is removed or a part of the dam 30 is removed. By forming the dam 30 with the same material as the photoresistor PSR, it is possible to easily pattern while easily removing the dam 30 . It is possible to leave a portion of the dam 30 through the sawing process. In addition, the dam 30 may be formed of a white organic material (TiO ₂ , including SiO ₂ component) having a reflective film function.

13 is a diagram illustrating another example of a method of manufacturing a semiconductor device according to the present disclosure, and will be described using a semiconductor light emitting device as an example. Before separating the second substrate 17 from the first substrate 10 , the growth substrate 10 is separated from the plurality of semiconductor layers 22 , 23 , and 24 . Preferably, the space between the first electrode 25 and the second electrode 26 is filled with an insulator 31 . More preferably, the entire space where the second semiconductor layer 23 and the first substrate 10 face is filled. The process of filling this space may be performed during the manufacturing of the semiconductor light emitting device chip 20 or before fixing the semiconductor light emitting device chip 20 to the first electrode 10 . In addition, it is also possible to directly or indirectly form a structure (not shown) including a phosphor and/or a light scattering agent on the first semiconductor layer and 22 using a transparent adhesive.

14 is a diagram illustrating another example of a method of manufacturing a semiconductor device according to the present disclosure, and will be described using a semiconductor light emitting device as an example. As in FIG. 8 , a plurality of semiconductor light emitting device chips 20a , 20b , 20c , and 20d are not fixed to the first substrate 10 as individual semiconductor light emitting device chips 20 , but on the first substrate 10 . It is fixed through one growth substrate 21 . Of course, the plurality of semiconductor light emitting device chips 20a, 20b, 20c, and 20d may be connected to each other in parallel, series, or series-parallel through wiring.

15 is a diagram illustrating another example of a semiconductor device according to the present disclosure, and will be described using a semiconductor light emitting device as an example. The semiconductor light emitting device shown in FIG. 15 includes, in addition to the semiconductor light emitting device A made according to the method shown in FIGS. 6 to 9 , the lead frames 2 and 3 to which the conductive parts 15 and 15 are coupled, and the semiconductor light emitting device. (A) encapsulating the encapsulant 1000 and optionally further comprising a mold portion 5 for accommodating the encapsulant 1000.

16 is a diagram illustrating another example of a method of manufacturing a semiconductor device according to the present disclosure, and will be described using a semiconductor light emitting device as an example. Unlike the semiconductor device shown in FIG. 8, as a growth substrate, a group III nitride semiconductor, that is, Al(x)Ga(y)In(1-xy)N (0=x=1, 0=y=1, 0= An example in which a growth substrate 21a (eg, GaN) of x+y=1) is used is presented. In the case of a semiconductor device using a GaN substrate, it is characterized by high output, low operating voltage, low heat generation, etc., but it is still expensive compared to the sapphire substrate, so it is necessary to reduce the chip size to reduce the cost, cracking of the chip, electrode It may cause problems such as limit of chip size reduction due to size and high heat due to increase in current density. On the other hand, since the coefficient of thermal expansion of GaN is 5.56 ppm, when it is mounted on a lead frame made of a conventional metal (Cu, Al) (for example, the coefficient of thermal expansion of a lead frame made of Cu is 16 ppm), a group III nitride semiconductor There is a high possibility of causing various mechanical problems due to the difference in the coefficient of thermal expansion between the semiconductor chip and the supporting substrate using the grown growth substrate. By using the support substrate for a semiconductor device according to the present disclosure presented over FIGS. 6 to 15 , it is possible to solve this problem. In addition, damage to the semiconductor chip that occurs when the semiconductor chip is gripped can also be prevented by using the support substrate. Preferably, by selecting the material of the first substrate 10 as a material having a small difference in thermal expansion coefficient from that of the growth substrate 21a (preferably, 2ppm), various mechanical and thermal effects that may occur due to the difference in thermal expansion coefficient It is possible to correct the defect. For example, when the growth substrate 21a is GaN (5.56 ppm), by selecting ceramic AlN (4.8 ppm) as the first substrate 10, the difference in the coefficient of thermal expansion between the two is within 2 ppm, more preferably It becomes possible to set it as 1 ppm or less. Since the Al ₂ O ₃ ceramic has a coefficient of thermal expansion of 6.9 to 7.5 ppm, it can be applied to the first substrate 10 . Except for the description of the same reference numerals, as shown in FIG. 7 , it goes without saying that a reflective layer or an insulating layer 12a may be provided between the electrodes 25 and 26 .

17 is a diagram illustrating another example of a method of manufacturing a semiconductor device according to the present disclosure, and will be described using a semiconductor light emitting device as an example. A vertical chip using the growth substrate 21a is mounted on the first substrate 10 . The second electrode 26 is electrically connected to the second semiconductor layer 23 , and the second electrode 26 is electrically connected to the conductive pad 19 - 1 and the conductive part 15 - 1 through a wire. and the first semiconductor layer 22 is electrically connected to the conductive pad 19-2 and the conductive part 15-2 through the growth substrate 21a. A separate electrode (corresponding to the first electrode 25) may be provided under the growth substrate 21a, and the growth substrate 21a and the vertical chip may be fixed through a conventional method. Description of the same reference numerals will be omitted.

18 is a diagram illustrating another example of a method of manufacturing a semiconductor device according to the present disclosure, and will be described using a semiconductor light emitting device as an example. A lateral chip using the growth substrate 21a is mounted on the first substrate 10 . The first electrode 25 is electrically connected to the first semiconductor layer 22 , and the second electrode 26 is electrically connected to the second semiconductor layer 23 . The first electrode 25 is electrically connected to the conductive pad 19-2 and the conductive part 15-2 through a wire, and the second electrode 26 is connected to the conductive pad 19-1 and the conductive part 15-2 through a wire. It is electrically connected to the conductive part 15-1. Preferably, a conductive pad 19 - 3 and a conductive portion 15 - 3 are additionally provided to function as a heat dissipation passage from the semiconductor chip. When the growth substrate 21a is conductive, a separate insulating layer may be provided between the conductive pad 19-3 and the growth substrate 21a, and the conductive pad 19-3 is replaced with a non-conductive material. It is also possible

Various embodiments of the present disclosure will be described.

(1) A method of manufacturing a semiconductor light emitting device, having a first surface and a second surface opposite to the first surface, and having a first groove and a second groove directed from the first surface side to the second surface side; preparing a first substrate in which conductive portions are formed in each of the first and second grooves to limit thermal expansion of the conductive portions by the first and second grooves during thermal expansion; bonding the second substrate to the first substrate through the bonding layer on the first side side; A growth substrate, a plurality of semiconductor layers grown on the growth substrate, a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, a first semiconductor layer and a second semiconductor layer A semiconductor light emitting having a plurality of semiconductor layers interposed therebetween and having an active layer generating light through recombination of electrons and holes, and first and second electrodes electrically connected to the first semiconductor layer and the second semiconductor layer, respectively A method comprising: fixing the device chip to the first substrate from the second surface side; fixing each of the first electrode and the second electrode to the conductive part of the first groove and the conductive part of the second groove; A method of manufacturing a semiconductor light emitting device.

The first substrate 10 is a ceramic substrate, Al ₂ O ₃ crystal substrate, AlN crystal substrate, HTCC, LTCC, Al ₂ O ₃ mixture or ceramic, Al ₂ O ₃ -ZrO ₂ mixture or ceramic, AlN mixture or ceramic, etc. can be done

By locating the conductive part 15 in the groove 14, thermal expansion of the conductive part 15 mainly made of a metal material can be suppressed.

The thickness of the first substrate 10 is preferably 10 μm or more and 2000 μm. If it is too thin, it is not easy to serve as a support substrate. Preferably, it has a thickness of 30 μm to 500 μm. If it is too thick, unnecessary processing time is caused in a subsequent polishing process or the like.

For example, the groove 14 may have a width of 30 μm, and the length may vary depending on the length of the electrodes 25 and 26 . Of course, one electrode 25 may correspond to the plurality of grooves 14 . In the case of having a hole shape, it is appropriate that the length of one side is 200 μm or less. The groove 14 preferably has a width of 30 μm or more and 200 μm or less. If it is too small, the heat dissipation characteristic may deteriorate, and if it is too large, the first substrate 10 may be cracked. Basically, the size of the groove 14 may vary depending on the shape of the electrodes 25 and 26 . For example, the depth of the groove 14 may be formed to be about 10% greater than the thickness of the first substrate 10 after being polished.

The conductive part 15 including the conductive pad 16 may be formed by, for example, forming a seed layer using an E-beam or sputter and then plating. Examples of the plating material include Cu, Ni, Au, Ag, In, Sn, and the like. It is also possible to use Ag, Cu-based conductive paste. In addition, an electrically conductive paste containing graphite, CNT, AlN, and SiC can be used. The conductive pad 16 may be formed of any one or a combination of Au, Ag, Pt, Pd, Cu, Ni, Cr, Sn, In, Zn, Ti, and TiW, or a plurality of layers using these materials. may be formed, and it is possible to form together with or separately from the conductive part 15 . It is also possible to form the conductive pad 16 with Ag or Cu-based conductive paste. It goes without saying that the conductive portion 15 and/or the conductive pad 16 may be formed after bonding the first substrate 10 and the second substrate 17 . Meanwhile, a method may be adopted in which a portion of the conductive portion 15 is primarily formed through plating, and then the remaining portion is filled with a conductive paste. This has the advantage of having a small electrical resistance in the case of plated metal, but since the plated metal itself has a problem of thermal expansion, it is used together with a conductive paste to consider high electrical conductivity and suppression of thermal expansion.

The second substrate 17 may be formed of an electrically insulating material, for example, glass, sapphire, Al ₂ O ₃ mixture, Al ₂ O ₃ -ZrO ₂ mixture, AlN mixture, silicon, oxide ceramic, etc. may be used. there is. The second substrate 17 may be bonded to the first substrate 10 through the bonding layer 18 , but there is also a method of forming the second substrate 17 on the first substrate 10 by vapor deposition or the like. . The second substrate 17 thus formed may be removed through etching. By forming the second substrate 17 of the same material as that of the first substrate 10 , the coefficient of thermal expansion between them can be matched. For example, both the first substrate 10 and the second substrate 17 may be formed of sapphire.

Preferably, the semiconductor light emitting device chips 20 are fixed at equal intervals.

An insulator may be provided between the first electrode 25 and the second electrode 26, and may include a thermo-set or thermo-plastic resin, and may be made of phenol resin, epoxy resin, BT resin, PPA, silicon resin, or the like. can

(2) prior to the fixing step, reducing the thickness of the first substrate in a state in which the first substrate is fixed to the second substrate;

(3) A method of manufacturing a semiconductor light emitting device, characterized in that the reduced thickness of the first substrate is 30 μm or more and 500 μm or less. If it is too thin and is not easy to perform a supporting function, if it is too thick, it may cause difficulties in a cutting process and the like, and it may be difficult to accommodate it in a package as shown in FIG. 15 .

(4) prior to the fixing step, forming a conductive pad on the conductive portion on the second surface side; the method of manufacturing a semiconductor light emitting device further comprising a.

The conductive pad 19 may be formed through plating or deposition. The conductive pad 19 may be formed of any one or a combination of Au, Ag, Pt, Pd, Cu, Ni, Cr, Sn, In, Zn, Ti, and TiW, or a plurality of layers using these materials. can be formed with It is also possible to form the conductive pad 16 with Ag or Cu-based conductive paste. A reflective layer or an insulating layer 12a may be provided on the first substrate 10 between the conductive pads 19 . When functioning as the reflective layer 12a, it may be formed of Ag, Al, Rh, Cr, Ti, TiW, Au, DBR, or OBR having high reflectivity. In the case of functioning as the insulating layer 12a, it may be formed of SiO ₂ , TiO ₂ , ZrO ₂ , Al ₂ O ₃ , DBR, SOG (Spin On Gel), epoxy, resin, or the like. In the case where the reflective layer or the insulating layer 12a functions as an insulating layer for the conductive pads 19 located on both sides, it is preferable that the height of the insulating layer 12a is higher than the height of the conductive pad 19 .

(5) forming an encapsulant so as to cover the semiconductor light emitting device chip from the second surface side;

The encapsulant may include a phosphor and/or a light scattering agent, and may be composed of a single layer or multiple layers, and each layer may be transparent or contain different types of phosphors.

(6) The step of forming the encapsulant is a method of manufacturing a semiconductor light emitting device, characterized in that it includes the process of exposing the side of the encapsulant.

For example, the encapsulant 27 may be partially removed through a laser, dicing, cutting process, or the like.

(7) separating the second substrate from the first substrate; Method of manufacturing a semiconductor light emitting device, characterized in that it further comprises.

It is also possible to remove the second substrate 17 using polishing, wet etching, etc., and when the bonding layer 18 or the second substrate 17 is made of a material that responds to light, an optical method (light) It is also possible to remove

(8) The method of manufacturing a semiconductor light emitting device, characterized in that the step of separating includes the step of removing the bonding layer.

A tape may be used as the bonding layer 18 . In addition, the bonding layer 18 may be formed by depositing a metal, oxide, nitride, etc. and then removing it through etching. It is also possible to form the bonding layer 18 of a material capable of thermal peeling, thermal-chemical decomposition, photo-chemical decomposition, and photo-thermal-chemical decomposition.

(9) cutting the first substrate to include the semiconductor light emitting device chip; Method of manufacturing a semiconductor light emitting device comprising the further comprising.

One semiconductor light emitting device chip 20 is not necessarily placed in the encapsulant 27 , and a plurality of semiconductor light emitting device chips 20 may be provided in the encapsulant 27 . The plurality of semiconductor light emitting device chips 20 do not necessarily emit the same color and may emit various colors such as blue, green, and ultraviolet rays. It is also possible to provide an ESD protection device together.

For cutting, laser ablation, dicing saw, etc. may be used.

(10) Prior to the step of cutting, generating a crack in the inside of the first substrate; Method of manufacturing a semiconductor light emitting device comprising a further comprising.

Cracks can be formed using so-called Stealth Lasers.

(11) A method of manufacturing a semiconductor light emitting device, characterized in that a conductive pad is formed on at least one of the first surface side of the conductive portion and the second surface side of the conductive portion.

(12) A method of manufacturing a semiconductor light emitting device, characterized in that a plurality of conductive portions are fixed to the first electrode or the second electrode.

(13) forming an encapsulant so as to cover the semiconductor light emitting device chip on the second surface side; And, cutting the first substrate to include the semiconductor light emitting device chip; manufacturing a semiconductor light emitting device, characterized in that after cutting, a portion of the second surface of the first substrate is exposed without an encapsulant Way.

It is appropriate that the length of the region to be exposed does not exceed 100 μm. If it is too wide, material loss increases, and in the case of using a Stealth Laser, the process is possible when the distance between chips is about 30㎛.

(14) A method of manufacturing a semiconductor light emitting device, characterized in that in the step of preparing the first substrate, a conductive pad is formed on at least one of the first surface side of the conductive part and the second surface side of the conductive part.

(15) on the second surface side, forming an encapsulant to cover the semiconductor light emitting element chip; further comprising, prior to the step of forming the encapsulant, the semiconductor light emitting element chip on the first substrate from the second surface side Forming a dam next to; Method of manufacturing a semiconductor light emitting device, characterized in that it further comprises.

Dam 30 can utilize PR and dry film. It can function as a reflective film, and EMC, White Silicone, Silicone containing TiO ₂ , etc. can be used.

(16) cutting the first substrate to include the semiconductor light emitting device chip; further comprising, prior to the cutting step, removing at least a portion of the dam; How to manufacture.

(17) separating the second substrate from the first substrate; further comprising, prior to the step of separating the second substrate, separating the growth substrate from the plurality of semiconductor layers; A method of manufacturing a semiconductor light emitting device.

(18) The fixing step comprises filling a space between the first electrode and the second electrode with an insulator.

(19) prior to the fixing step, filling the space between the first electrode and the second electrode with an insulator;

(20) In the fixing step, a method of manufacturing a semiconductor light emitting device, characterized in that the plurality of semiconductor light emitting device chips including the semiconductor light emitting device chip is fixed to the first substrate.

(21) A method of manufacturing a semiconductor light emitting device, characterized in that the first substrate and the growth substrate are made of the same material.

It is most preferable to use the same material, but it is also possible to use a material that does not have a large difference in thermal expansion coefficient (eg, Al ₂ O ₃ and AlN).

(22) A method of manufacturing a semiconductor light emitting device, characterized in that the first substrate is made of a light-transmitting material. In this case, Stealth Laser processing is possible.

(23) a growth substrate, a plurality of semiconductor layers grown on the growth substrate, a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, a first semiconductor layer and a second semiconductor A plurality of semiconductor layers interposed between the layers and having an active layer generating light through recombination of electrons and holes, and first and second electrodes electrically connected to the first semiconductor layer and the second semiconductor layer, respectively semiconductor light emitting device chip; And, it has a first surface and a second surface opposite to the first surface, has a first groove and a second groove directed from the first surface side to the second surface side, and a conductive part is formed in each of the first groove and the second groove a first substrate in which the first groove and the second groove can limit the thermal expansion of each conductive part during thermal expansion, and have light-transmitting properties, the first electrode is fixed to the conductive part of the first groove, and the second electrode is the second electrode 2 A semiconductor light emitting device comprising a; a first substrate fixed to the conductive portion of the groove.

(24) A semiconductor light emitting device, characterized in that the first substrate is made of the same material as the growth substrate.

(25) The semiconductor light emitting device chip has a side surface connecting the first surface and the second surface, and the side surface is spaced apart from the first surface and the second surface, and a rough surface formed by a crack by laser irradiation is formed. semiconductor light emitting device.

(26) In a semiconductor light emitting device, a plurality of semiconductor layers grown using a growth substrate, a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, a first semiconductor A plurality of semiconductor layers interposed between the layer and the second semiconductor layer and having an active layer generating light through recombination of electrons and holes, and a first electrode and a first electrode electrically connected to each of the first semiconductor layer and the second semiconductor layer a semiconductor light emitting device chip having two electrodes; In addition, a first surface having a first surface, a second surface opposite to the first surface, and a side surface connecting the first surface and the second surface, and having a first groove and a second groove directed from the first surface side to the second surface side A substrate; the side surface is spaced apart from the first surface and the second surface and has a rough surface formed by a crack by laser irradiation, the first electrode is fixed to the conductive part of the first groove, and the second electrode is the second electrode 2 A semiconductor light emitting device comprising a; a first substrate fixed to the conductive portion of the groove.

(27) a first lead frame to which the conductive portion of the first groove is fixed; a second lead frame to which the conductive portion of the second groove is fixed; and an additional encapsulant surrounding the semiconductor light emitting device chip and the first substrate.

(28) A method of manufacturing a semiconductor light emitting device, comprising: bonding a second substrate to a first substrate; fixing a semiconductor light emitting device chip having an active layer that generates light through recombination of electrons and holes to a first substrate; separating the second substrate from the first substrate; forming a crack in the first substrate; and, cutting the first substrate to include the semiconductor light emitting device chip.

(29) A method of manufacturing a semiconductor light emitting device, comprising: preparing a first substrate coupled to a second substrate and having cracks formed therein; fixing a semiconductor light emitting device chip having an active layer that generates light through recombination of electrons and holes to a first substrate; separating the second substrate from the first substrate; Cutting the first substrate along the cracks by pressing the first substrate; A method of manufacturing a semiconductor light emitting device comprising:

(30) prior to the fixing step, forming a reflective layer on the second surface side of the first substrate; When the reflective layer is made of a conductive material, it is formed at a distance from the conductive portion 15 or the conductive pad 19 .

(31) A method of manufacturing a support substrate for a semiconductor device, comprising: preparing a first substrate having a first surface and a second surface opposite to the first surface; forming a groove in the first substrate from the first surface side to the second surface side; forming a conductive part in the groove; bonding a second substrate to the first substrate from the first side side; and forming, on the second surface side, a first conductive pad so as to be electrically conductive with the conductive part.

(32) A method of manufacturing a support substrate for a semiconductor device, comprising: preparing a first substrate having a first surface and a second surface opposite to the first surface; forming a groove in the first substrate from the first surface side to the second surface side; forming a conductive part in the groove; forming at least one conductive pad on the conductive portion; and bonding the second substrate to the first substrate from the side of the first surface.

(33) A semiconductor device comprising: a semiconductor element grown using a group III nitride semiconductor having a first coefficient of thermal expansion as a growth substrate; and a first substrate having a second coefficient of thermal expansion having a difference of within 2 ppm from the first coefficient of thermal expansion and coupled to a semiconductor device, comprising a conductive portion formed through the first substrate to provide an electrical path to the semiconductor device A semiconductor device comprising a; a first substrate.

(34) A semiconductor device comprising: a semiconductor element grown using a growth substrate made of GaN; and a first substrate including AlN and coupled to a semiconductor device, the first substrate having a conductive portion formed through the first substrate to provide an electrical path to the semiconductor device; Device. The first substrate may be formed of an AlN mixture, an AlN single crystal, or a combination thereof.

(35) A semiconductor device comprising: a semiconductor element grown using a growth substrate made of a group III nitride semiconductor; and a first substrate coupled to the semiconductor device, the first substrate having a conductive portion formed through the first substrate to provide an electrical path to the semiconductor device, wherein the first substrate has a first surface and a first It has a second surface opposite to the surface and a side surface connecting the first surface and the second surface, the semiconductor device is coupled to the second surface side, and the first surface and the second surface are spaced apart from the side surface to crack due to laser irradiation A semiconductor device characterized in that a rough surface formed by

(36) A method of manufacturing a semiconductor device, comprising: preparing a first substrate having a first surface and a second surface opposite to the first surface; forming a groove in the first substrate from the first surface side to the second surface side; forming a conductive part in the groove; bonding a second substrate to the first substrate from the first side side; and bonding the grown semiconductor device to the first substrate using a growth substrate made of a group III nitride semiconductor so as to be electrically conductive with the conductive portion.

(37) A semiconductor device comprising: a semiconductor element grown using a growth substrate made of a group III nitride semiconductor having a first coefficient of thermal expansion; and a first substrate having a second coefficient of thermal expansion (eg, AlN mixture) that is smaller than the first coefficient of thermal expansion, and coupled to the semiconductor device, comprising a conductive portion formed through the first substrate to provide an electrical path to the semiconductor device A semiconductor device comprising a; a first substrate.

(38) A semiconductor device comprising: a first substrate; and a vertical chip mounted on the first substrate, grown using a heterogeneous substrate (eg, a sapphire substrate) as a growth substrate, and having the growth substrate removed after growth.

According to one supporting substrate for a semiconductor device according to the present disclosure, it is possible to prevent cracks or cracks in the semiconductor device chip.

According to one semiconductor device according to the present disclosure, it is possible to prevent a crack or breakage of the semiconductor element chip.

According to the method of manufacturing one semiconductor device according to the present disclosure, it is possible to prevent cracks or cracks in the semiconductor device chip.

The first substrate 10 , the groove 14 , the conductive portion 15 , the conductive pad 16 , the semiconductor light emitting device chip 20 .

Claims (1)

A method for manufacturing a support substrate for a semiconductor device, comprising:
preparing a first substrate having a first surface and a second surface opposite to the first surface;
forming a groove in the first substrate from the first surface side to the second surface side;
forming a conductive part in the groove;
bonding a second substrate made of sapphire to the first substrate on the side of the first side opposite to the second side through an optically removable bonding layer as a light-responsive material; And,
Including; forming a first conductive pad so as to conduct with the conductive portion on the side of the second surface to which the semiconductor device is to be coupled;
The second substrate coupled to the first substrate from the side opposite to the second surface on which the first conductive pad to which the semiconductor device is coupled is formed is removed through the bonding layer using light. how to manufacture it.

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