KR102379807B1 - Organic light emitting display device and the method for driving the same - Google Patents

Abstract

The present embodiments relate to an organic light emitting display device and a driving method thereof, and more particularly, after applying an initialization voltage for detecting a specific defect to a sensing line required to sense a characteristic value of a driving transistor or an organic light emitting diode, sensing By detecting whether the sensing line is defective based on the voltage change of the line, it is possible to accurately detect the defect in the sensing line. Through this, it is possible to accurately detect even a progressive sensing line defect in which the defect may change depending on a driving environment such as temperature and humidity.

Description

Organic light emitting display device and driving method thereof

The present embodiments relate to an organic light emitting display device and a driving method thereof.

Recently, an organic light emitting display device, which has been in the spotlight as a display device, has advantages of fast response speed, high luminous efficiency, luminance, and viewing angle by using an organic light emitting diode (OLED) that emits light by itself.

In such an organic light emitting display device, sub-pixels including an organic light emitting diode and a driving transistor for driving the same are arranged in a matrix form, and the brightness of the sub-pixels selected by a scan signal is controlled according to a gray level of data.

In such an organic light emitting display panel, a driving transistor or an organic light emitting diode in each sub-pixel has a unique characteristic value and may change according to a driving time.

The change in the characteristic value of the driving transistor or the change in the characteristic value of the organic light emitting diode in each sub-pixel may be different depending on the deviation of the driving time (ie, the difference in the degree of deterioration).

As a result, a deviation in characteristic values between driving transistors or a deviation in characteristic values between organic light emitting diodes may cause unevenness in luminance of the organic light emitting diode display panel, thereby significantly reducing image quality.

Accordingly, a compensation technology for sensing and compensating a characteristic value of a driving transistor or an organic light emitting diode in each sub-pixel is being developed.

In such a conventional compensation technique, it is most important to accurately sense the characteristic value of a driving transistor or an organic light emitting diode in each sub-pixel through voltage sensing of a sensing line.

On the other hand, due to various reasons such as foreign matter in the process, aggregation of conductive balls in the bonding area, or occurrence of a short circuit in the integrated circuit, the sensing line used for characteristic sensing in the compensation technology is short-circuited with the surrounding signal line. Line faults occur frequently. A sensing error may occur and an image abnormality may occur due to such a sensing line defect.

Accordingly, a technology for accurately detecting a defect in a sensing line is required above all else.

However, a technology for accurately detecting a sensing line defect has not yet been developed. In particular, there is a situation in which the presence or absence of a defect varies depending on a driving environment such as temperature and humidity, which makes it more difficult to develop a technology for accurately detecting a defect in a sensing line.

An object of the present exemplary embodiments is to provide an organic light emitting display device capable of accurately detecting a defect in a sensing line required to sense a characteristic value of a sub-pixel, and a driving method thereof.

Another object of the present embodiments is to provide an organic light emitting display device and a driving method thereof that enable accurate detection even for a progressive sensing line defect that may be defective depending on a driving environment such as temperature and humidity.

Another object of the present embodiments is to provide an organic light emitting display device capable of accurately detecting a defect in a sensing line and preventing a screen abnormality through appropriate corresponding processing, and a driving method thereof.

In one aspect, the present embodiments provide a plurality of subpixels defined by a plurality of data lines and a plurality of gate lines, each subpixel comprising an organic light emitting diode, a driving transistor for driving the organic light emitting diode; A first transistor electrically connected between the first node of the driving transistor and the data line, a second transistor electrically connected between the second node of the driving transistor and the sensing line, and between the first node and the second node of the driving transistor An organic light emitting display panel having electrically connected storage capacitors disposed thereon, a data driver driving a plurality of data lines, a gate driver driving a plurality of gate lines, and a sensing line defect detection unit detecting whether the sensing lines are defective It is possible to provide an organic light emitting display device.

In such an organic light emitting diode display, the sensing line defect detection unit is configured to detect a defect that is higher than a voltage applied to a signal line adjacent to the sensing line when the first transistor and the second transistor are turned off during the sensing line defect detection period. After the initialization voltage is applied to the sensing line, whether the sensing line is defective may be detected based on the sensing voltage sensed by the voltage of the sensing line.

In another aspect, the present embodiments provide a plurality of subpixels defined by a plurality of data lines and a plurality of gate lines, each subpixel comprising an organic light emitting diode, a driving transistor for driving the organic light emitting diode; A first transistor electrically connected between the first node of the driving transistor and the data line, a second transistor electrically connected between the second node of the driving transistor and the sensing line, and between the first node and the second node of the driving transistor A method of driving an organic light emitting display device including an organic light emitting display panel in which an electrically connected storage capacitor is disposed, a data driver driving a plurality of data lines, and a gate driver driving a plurality of gate lines may be provided.

In this method of driving an organic light emitting diode display, a sensing line that applies an initialization voltage for defect detection higher than a voltage applied to a signal line adjacent to the sensing line to the sensing line when the first transistor and the second transistor are turned off. An initialization step, a floating sensing line floating step of floating the sensing line, a sensing line voltage sensing step of sensing the voltage of the sensing line, and a sensing line detecting whether the sensing line is defective based on the sensing voltage sensing the voltage of the sensing line It may include a defect detection step.

According to the present exemplary embodiments as described above, it is possible to provide an organic light emitting display device capable of accurately detecting a defect in a sensing line required to sense a characteristic value of a sub-pixel, and a driving method thereof.

In addition, according to the present embodiments, it is possible to provide an organic light emitting display device and a driving method thereof that enable accurate detection even for a progressive sensing line defect that may be defective depending on a driving environment such as temperature and humidity. .

In addition, according to the present exemplary embodiments, it is possible to provide an organic light emitting display device capable of accurately detecting a defect in a sensing line and preventing a screen abnormality through appropriate corresponding processing, and a driving method thereof.

1 is a system configuration diagram of an organic light emitting diode display according to example embodiments.
2 is an exemplary diagram of a sub-pixel structure of an organic light emitting diode display according to example embodiments.
3 is an exemplary diagram of a compensation circuit of an organic light emitting diode display according to the present exemplary embodiment.
4 is a view for explaining a threshold voltage sensing driving method for a driving transistor in the organic light emitting diode display according to the present exemplary embodiments.
5 is a view for explaining a mobility sensing driving method for a driving transistor in the organic light emitting diode display according to the present exemplary embodiments.
6 is a diagram illustrating the arrangement of main signal lines in the organic light emitting display panel according to the present exemplary embodiment.
7 is a view for explaining a sensing line defect in the organic light emitting display panel according to the present exemplary embodiment.
8 to 10 are diagrams for explaining a sensing error and image abnormality due to a sensing line defect in the organic light emitting diode display according to the present exemplary embodiments.
11 is a diagram illustrating a sensing line defect detection system of an organic light emitting diode display according to example embodiments.
12 is a diagram illustrating in more detail a sensing line defect detection system of an organic light emitting diode display according to example embodiments.
13 is a view for explaining a sensing line defect detection principle of the organic light emitting diode display according to the present exemplary embodiment.
14 is a timing diagram for detecting a sensing line defect according to the present embodiments.
15 is a graph illustrating a voltage change of a sensing line according to the presence or absence of a sensing line defect in a sensing line defect detection section according to the present embodiments.
16 is another graph illustrating a voltage change of a sensing line according to the presence or absence of a sensing line defect in a sensing line defect detection section according to the present embodiments.
17 is a view for explaining a method of responding to a sensing line defect detection of an organic light emitting diode display according to the present exemplary embodiment.
18 is a flowchart illustrating a method of driving an organic light emitting diode display for detecting a sensing line defect according to the present exemplary embodiment.
19 is an exemplary diagram of a sensing line defect detection section according to the present embodiments.
20 is a diagram illustrating a screen in which an abnormal screen phenomenon is prevented through detection of a sensing line defect according to the present embodiments.

Hereinafter, some embodiments of the present invention will be described in detail with reference to exemplary drawings. In adding reference numerals to components of each drawing, the same components may have the same reference numerals as much as possible even though they are indicated in different drawings. In addition, in describing the present invention, if it is determined that a detailed description of a related known configuration or function may obscure the gist of the present invention, the detailed description may be omitted.

In addition, in describing the components of the present invention, terms such as first, second, A, B, (a), (b), etc. may be used. These terms are only for distinguishing the elements from other elements, and the essence, order, order, or number of the elements are not limited by the terms. When it is described that a component is “connected”, “coupled” or “connected” to another component, the component may be directly connected or connected to the other component, but other components may be interposed between each component. It should be understood that each component may be “interposed” or “connected”, “coupled” or “connected” through another component.

1 is a system configuration diagram of an organic light emitting display device 100 according to the present exemplary embodiment.

Referring to FIG. 1 , in the organic light emitting diode display 100 according to the present exemplary embodiments, a plurality of data lines DL and a plurality of gate lines GL are disposed, and a plurality of data lines DL and a plurality of data lines DL are disposed. The organic light emitting display panel 110 in which a plurality of sub pixels (SP) defined by the gate line GL are disposed, the data driver 120 driving the plurality of data lines DL, and the plurality of It includes a gate driver 130 for driving the gate line GL, a data driver 120 , and a controller 140 for controlling the gate driver 130 .

The controller 140 supplies various control signals to the data driver 120 and the gate driver 130 to control the data driver 120 and the gate driver 130 .

The controller 140 starts scanning according to the timing implemented in each frame, converts the input image data input from the outside to match the data signal format used by the data driver 120, and outputs the converted image data, , to control the data operation at an appropriate time according to the scan.

The controller 140 may be a timing controller used in a typical display technology or a control device that further performs other control functions including a timing controller.

The data driver 120 drives the plurality of data lines DL by supplying data voltages to the plurality of data lines DL. Here, the data driver 120 is also referred to as a 'source driver'.

The data driver 120 may include at least one source driver integrated circuit (SDIC) to drive a plurality of data lines.

The gate driver 130 sequentially drives the plurality of gate lines GL by sequentially supplying scan signals to the plurality of gate lines GL. Here, the gate driver 130 is also referred to as a 'scan driver'.

The gate driver 130 may include at least one gate driver integrated circuit (GDIC) to drive a plurality of gate lines GL.

The gate driver 130 sequentially supplies a scan signal of an on voltage or an off voltage to the plurality of gate lines GL under the control of the controller 140 .

When a specific gate line is opened by the gate driver 130 , the data driver 120 converts the image data received from the controller 140 into an analog data voltage and supplies it to the plurality of data lines DL.

Although the data driver 120 is located only on one side (eg, upper or lower side) of the organic light emitting display panel 110 in FIG. 1 , both sides (eg, the organic light emitting display panel 110 ) according to a driving method and a panel design method. : It may be located on both the upper and lower sides).

Although the gate driver 130 is located only on one side (eg, left or right) of the organic light emitting display panel 110 in FIG. 1 , the gate driver 130 is located on both sides (eg, the left or right side) of the organic light emitting display panel 110 according to a driving method, a panel design method, etc. For example, it can be located on both the left and right side).

The above-described controller 140, along with the input image data, includes a vertical sync signal (Vsync), a horizontal sync signal (Hsync), an input data enable (DE: Data Enable) signal, various types including a clock signal (CLK), etc. Timing signals are received from the outside (eg host system).

The controller 140 receives timing signals such as a vertical synchronization signal (Vsync), a horizontal synchronization signal (Hsync), an input DE signal, and a clock signal to control the data driver 120 and the gate driver 130, Various control signals are generated and output to the data driver 120 and the gate driver 130 .

For example, in order to control the gate driver 130 , the controller 140 includes a gate start pulse (GSP), a gate shift clock (GSC), and a gate output enable signal (GOE: Various gate control signals (GCS: Gate Control Signal) including Gate Output Enable) are output.

Here, the gate start pulse GSP controls the operation start timing of one or more gate driver integrated circuits constituting the gate driver 130 . The gate shift clock GSC is a clock signal commonly input to one or more gate driver integrated circuits and controls shift timing of a scan signal (gate pulse). The gate output enable signal GOE specifies timing information of one or more gate driver integrated circuits.

In addition, the controller 140 controls the data driver 120 , a source start pulse (SSP), a source sampling clock (SSC), and a source output enable signal (SOE: Source Output). Enable) and output various data control signals (DCS: Data Control Signal).

Here, the source start pulse SSP controls the data sampling start timing of one or more source driver integrated circuits constituting the data driver 120 . The source sampling clock SSC is a clock signal that controls sampling timing of data in each of the source driver integrated circuits. The source output enable signal SOE controls the output timing of the data driver 120 .

The data driver 120 may include at least one source driver integrated circuit (SDIC) to drive a plurality of data lines.

Each source driver integrated circuit SDIC is connected to a bonding pad of the organic light emitting display panel 110 by a tape automated bonding (TAB) method or a chip on glass (COG) method. It may be connected or directly disposed on the organic light emitting display panel 110 , or may be integrated and disposed on the organic light emitting display panel 110 in some cases. In addition, each source driver integrated circuit (SDIC) may be implemented in a chip on film (COF) method mounted on a film connected to the organic light emitting display panel 110 .

Each source driver integrated circuit SDIC may include a shift register, a latch circuit, a digital to analog converter (DAC), an output buffer, and the like.

Each source driver integrated circuit SDIC may further include an analog-to-digital converter (ADC) in some cases.

The gate driver 130 may include at least one gate driver integrated circuit (GDIC).

Each gate driver integrated circuit GDIC is connected to a bonding pad of the organic light emitting display panel 110 by a tape automated bonding (TAB) method or a chip-on-glass (COG) method, or a gate in panel (GIP) method. ) type and may be disposed directly on the organic light emitting display panel 110 , or may be integrated and disposed on the organic light emitting display panel 110 in some cases. In addition, each gate driver integrated circuit (GDIC) may be implemented in a chip-on-film (COF) method mounted on a film connected to the organic light emitting display panel 110 .

Each gate driver integrated circuit GDIC may include a shift register, a level shifter, and the like.

The organic light emitting diode display 100 according to the present exemplary embodiment includes at least one source printed circuit board (S-PCB) necessary for circuit connection to at least one source driver integrated circuit (SDIC); It may include a control printed circuit board (C-PCB) for mounting control components and various electric devices.

At least one source driver integrated circuit (SDIC) may be mounted on at least one source printed circuit board (S-PCB), or a film on which at least one source driver integrated circuit (SDIC) is mounted may be connected.

The control printed circuit board (C-PCB) includes a controller 140 for controlling operations of the data driver 120 and the gate driver 130 , the organic light emitting display panel 110 , the data driver 120 , and the gate driver. A power controller for supplying various voltages or currents to 130 or the like or controlling various voltages or currents to be supplied may be mounted.

The at least one source printed circuit board (S-PCB) and the control printed circuit board (C-PCB) may be circuitly connected through at least one connecting member.

Here, the connecting member may be a flexible printed circuit (FPC), a flexible flat cable (FFC), or the like.

At least one of the source printed circuit board (S-PCB) and the control printed circuit board (C-PCB) may be integrated into one printed circuit board.

Each subpixel SP disposed in the organic light emitting display panel 110 may include circuit elements such as transistors.

For example, each sub-pixel SP is composed of an organic light emitting diode (OLED) and circuit elements such as a driving transistor for driving the organic light emitting diode (OLED).

The type and number of circuit elements constituting each sub-pixel SP may be variously determined according to a provided function and a design method.

2 is an exemplary diagram of a sub-pixel structure of the organic light emitting diode display 100 according to the present exemplary embodiments.

Referring to FIG. 2 , in the organic light emitting diode display 100 according to the present exemplary embodiments, each sub-pixel includes an organic light emitting diode (OLED) and a driving transistor for driving the organic light emitting diode (OLED). (DRT: Driving Transistor), the first transistor T1 for transferring the data voltage Vdata to the first node N1 corresponding to the gate node of the driving transistor DRT, and the first transistor of the driving transistor DRT A second transistor T2 electrically connected between the second node N2 and a sensing line SL supplying a reference voltage Vref and a data voltage Vdata corresponding to the image signal voltage or It may be configured to include a storage capacitor (Cst: Storage Capacitor) that maintains a voltage corresponding thereto for one frame time.

The organic light emitting diode (OLED) may include a first electrode (eg, an anode electrode), an organic layer, and a second electrode (eg, a cathode electrode).

The driving transistor DRT drives the organic light emitting diode (OLED) by supplying a driving current to the organic light emitting diode (OLED).

In the driving transistor DRT, the first node N1 may be electrically connected to a source node or a drain node of the first transistor T1 and may correspond to a gate node. The second node N2 may be electrically connected to the first electrode of the organic light emitting diode OLED, and may be a source node or a drain node. In addition, the third node N3 may be electrically connected to a driving voltage line (DVL) supplying the driving voltage EVDD, and may be a drain node or a source node.

The first transistor T1 is electrically connected between the data line DL and the first node N1 of the driving transistor DRT, and is controlled by receiving the first scan signal SCAN1 as a gate node through the gate line. can be

The first transistor T1 is turned on by the first scan signal SCAN1 to transfer the data voltage Vdata supplied from the data line DL to the first node N1 of the driving transistor DRT. can

The second transistor T2 is electrically connected between the second node N2 of the driving transistor DRT and the sensing line SL, and may be controlled by receiving the second scan signal SCAN2 as a gate node.

The second transistor T2 is turned on by the second scan signal SCAN2 to apply the reference voltage Vref supplied through the sensing line SL to the second node N2 of the driving transistor DRT. does it

Also, the second transistor T2 may be used as one of the voltage sensing paths for the second node N2 of the driving transistor DRT.

The storage capacitor Cst may be electrically connected between the second node N2 and the first node N1 of the driving transistor DRT.

This storage capacitor Cst is not a parasitic capacitor (eg, Cgs, Cgd) which is an internal capacitor existing between the second node N2 and the first node N1 of the driving transistor DRT, It is an external capacitor intentionally designed outside the driving transistor (DRT).

The driving transistor DRT, the first transistor T1 and the second transistor T2 may be implemented as an n-type or a p-type as in the example of FIG. 2 .

The subpixel structure illustrated in FIG. 2 is referred to as a 3T1C structure because it includes three transistors DRT, T1 and T2 and one capacitor Cst.

The gate node of the first transistor T1 may be connected to the first gate line GL1 , and the gate node of the second transistor T2 may be connected to the second gate line GL2 . Accordingly, the first scan signal SCAN1 and the second scan signal SCAN2 may be different gate signals.

As such, under the 3T1C structure, when one sub-pixel is driven using two gate lines GL1 and GL2, the sub-pixel is said to have a “two scan structure”.

The gate node of the first transistor T1 and the gate node of the second transistor T2 may be connected together to one gate line GL. Accordingly, the first scan signal SCAN1 and the second scan signal SCAN2 may be the same gate signal.

As described above, under the 3T1C structure, when one sub-pixel is driven using one gate line GL, the sub-pixel is said to have a “one scan structure”.

On the other hand, in the case of the organic light emitting display device 100 according to the present exemplary embodiments, as the driving time of each subpixel SP increases, the circuit elements such as the organic light emitting diode (OLED) and the driving transistor (DRT) are Degradation may proceed.

Accordingly, unique characteristic values (eg, threshold voltage, mobility, etc.) of circuit elements such as organic light emitting diodes (OLEDs) and driving transistors (DRTs) may change.

A change in the characteristic value of such a circuit element causes a change in luminance of a corresponding sub-pixel. Accordingly, the change in the characteristic value of the circuit element can be used in the same concept as the change in the luminance of the sub-pixel.

In addition, the degree of change in the characteristic value between the circuit elements may be different depending on the difference in the degree of deterioration of each circuit element.

The deviation of the characteristic values between the circuit elements causes the luminance deviation between the sub-pixels. Accordingly, the characteristic value deviation between circuit elements may be used as the same concept as the luminance deviation between sub-pixels.

The above-described change in sub-pixel luminance and luminance deviation between sub-pixels may cause problems such as lowering the accuracy of the luminance expressive power of the sub-pixel or generating a screen abnormality.

Here, the characteristic value (hereinafter, also referred to as “sub-pixel characteristic value”) of the circuit element may include, for example, the threshold voltage and mobility of the driving transistor DRT, and in some cases, the organic light emitting diode (OLED). may include a threshold voltage of

The organic light emitting diode display 100 according to the present exemplary embodiments includes a sensing function for sensing (measuring) a change in sub-pixel luminance and a luminance deviation between sub-pixels (a change in a characteristic value of a circuit element and a deviation in a characteristic value between circuit elements), and a sensing result. A compensation function for compensating for sub-pixel luminance change and sub-pixel luminance deviation can be provided.

The organic light emitting diode display 100 according to the present exemplary embodiments includes a sub-pixel structure (the sub-pixel structure of FIG. 2 ) suitable for the sensing and compensation function for a sub-pixel luminance change and a luminance deviation between sub-pixels. , a compensation circuit comprising a sensing and compensation configuration.

3 is an exemplary diagram of a compensation circuit of the organic light emitting diode display 100 according to the present exemplary embodiment.

Referring to FIG. 3 , the organic light emitting diode display 100 according to the present exemplary embodiments senses a change in sub-pixel characteristic values (characteristics of a driving transistor and characteristics of an organic light emitting diode) and/or a deviation between sub-pixel characteristic values. , a sensing unit 310 that senses the voltage of the sensing line SL and outputs sensed data, a memory 320 that stores the sensed data, and a change in sub-pixel characteristics and/or sub-pixel characteristics using the sensed data It may include a compensation unit 330 that performs a compensation process for compensating for the deviation between the two.

The sensing unit 310 may be implemented as at least one analog to digital converter (ADC).

The sensing unit 310 may be included inside the source driver integrated circuit SDIC, and in some cases, may be included outside the source driver integrated circuit SDIC.

When the above-described sensing unit 310 is used, the voltage Vsen reflecting the characteristic value of the sub-pixel is converted into a sensing value corresponding to a digital value and output as sensed data, whereby the compensating unit 330 capable of processing at a digital level. can accurately sense (recognize) the characteristic value of a sub-pixel at a digital level.

The compensator 330 may be included inside the controller 140 , and in some cases, may be included outside the controller 140 .

The sensing data output from the sensing unit 310 may be, for example, in a low voltage differential signaling (LVDS) data format.

In the organic light emitting diode display 100 according to the present exemplary embodiments, in order to control the sensing driving, that is, the voltage application state of the second node N2 of the driving transistor DRT in the sub-pixel SP is determined as a sub-pixel characteristic value. As a switch configuration for controlling a state required for sensing, an initialization switch SPRE and a sampling switch SAM may be further included.

The initialization switch SPRE is a switch electrically connected between the sensing line SL and the reference voltage supply node, and may control whether the reference voltage Vref is supplied to the sensing line SL. Here, the reference voltage Vref may have a different voltage value depending on the type of the driving mode.

When the initialization switch SPRE is turned on, the reference voltage Vref is supplied to the sensing line SL and the second node N2 of the driving transistor DRT is supplied through the turned-on second transistor T2. ) can be approved.

The sampling switch SAM is a switch electrically connected between the sensing line SL and the sensing unit 310 , and may switch the connection between the sensing line SL and the sensing unit 310 .

By using the aforementioned initialization switch SPRE and sampling switch SAM, a voltage state, a connection state, and the like of the sensing line SL can be efficiently controlled in accordance with a sensing driving procedure.

On the other hand, when the voltage of the second node N2 of the driving transistor DRT becomes a voltage state reflecting the sub-pixel characteristic value, the sensing line SL that may be at the same potential as the second node N2 of the driving transistor DRT. ) may also be in a voltage state reflecting the sub-pixel characteristic value. In this case, a voltage reflecting the sub-pixel characteristic value may be charged in the line capacitor formed on the sensing line SL.

When the voltage of the second node N2 of the driving transistor DRT reaches a voltage state that reflects the sub-pixel characteristic, the sampling switch SAM is turned on, so that the sensing unit 310 and the sensing line SL are connected. can

Accordingly, the sensing unit 310 senses the voltage of the sensing line SL, which is a voltage state reflecting the sub-pixel characteristic, that is, the voltage of the second node N2 of the driving transistor DRT. Here, the sensing line SL is also referred to as a “reference voltage line”.

For example, one sensing line SL may be disposed in each subpixel column or may be disposed in each of two or more subpixel columns.

For example, when one pixel consists of 4 sub-pixels (red sub-pixel, white sub-pixel, green sub-pixel, and blue sub-pixel), the sensing line SL has 4 sub-pixel columns (red sub-pixel column, One pixel column including a white subpixel column, a green subpixel column, and a blue subpixel column) may be arranged one by one.

When the sensing unit 310 is connected to the sensing line SL, the voltage of the second node N2 of the driving transistor DRT (the voltage of the sensing line SL, or the line capacitor on the sensing line SL) is charged. voltage) is sensed.

The voltage sensed by the sensing unit 310 is a voltage value Vdata-Vth or Vdata-ΔVth including a threshold voltage Vth or a threshold voltage deviation ΔVth of the driving transistor DRT, or the driving transistor DRT. It may be a voltage value for sensing the mobility of

Meanwhile, a capacitor Cr which is intentionally formed or naturally generated may be present in the sensing line SL.

Hereinafter, threshold voltage sensing driving and mobility sensing driving of the driving transistor DRT will be briefly described.

4 is a diagram for explaining a threshold voltage sensing driving method for the driving transistor DRT in the organic light emitting diode display 100 according to the present exemplary embodiments.

When the threshold voltage sensing driving of the driving transistor DRT is performed, the voltage V1 of the first node N1 of the driving transistor DRT is initialized to the threshold voltage sensing driving data voltage Vdata, and the driving transistor DRT The voltage V2 of the second node N2 is initialized to the reference voltage Vref.

Thereafter, the initialization switch SPRE is turned off so that the second node N2 of the driving transistor DRT is floated.

Accordingly, the voltage V2 of the second node N2 of the driving transistor DRT increases.

The voltage V2 of the second node N2 of the driving transistor DRT rises and then gradually decreases and becomes saturated.

The saturated voltage V2 of the second node N2 of the driving transistor DRT corresponds to the difference between the data voltage Vdata and the threshold voltage Vth or the difference between the data voltage Vdata and the threshold voltage deviation ΔVth. can do.

When the voltage V2 of the second node N2 of the driving transistor DRT is saturated, the sensing unit 310 senses the saturated voltage V2 of the second node N2 of the driving transistor DRT.

The voltage Vsen sensed by the sensing unit 310 is a voltage Vdata-Vth obtained by subtracting the threshold voltage Vth from the data voltage Vdata or a voltage obtained by subtracting the threshold voltage deviation ΔVth from the data voltage Vdata ( Vdata-ΔVth).

FIG. 5 is a diagram for explaining a mobility sensing driving method for the driving transistor DRT in the organic light emitting diode display 100 according to the present exemplary embodiment.

During the mobility sensing driving, the voltage V1 of the first node N1 of the driving transistor DRT is initialized to the data voltage Vdata for driving the mobility sensing, and the second node N2 of the driving transistor DRT. The voltage V2 is initialized to the reference voltage Vref.

Thereafter, the initialization switch SPRE is turned off to float the second node N2 of the driving transistor DRT.

Accordingly, the voltage V2 of the second node N2 of the driving transistor DRT starts to rise.

The voltage rise rate (the amount of change in the voltage rise value with respect to time ΔV) of the second node N2 of the driving transistor DRT depends on the current capability of the driving transistor DRT, that is, the mobility.

That is, as the driving transistor DRT has a larger current capability (mobility), the voltage V2 of the second node N2 of the driving transistor DRT rises more steeply.

After the voltage V2 of the second node N2 of the driving transistor DRT rises for a predetermined period of time, the sensing unit 310 generates the increased voltage of the second node N2 of the driving transistor DRT. (that is, the voltage of the sensing line SL in which the voltage rises together with the voltage rise of the second node N2 of the driving transistor DRT) is sensed.

According to the threshold voltage or mobility sensing driving described above, the sensing unit 310 converts the sensed voltage Vsen to a digital value for threshold voltage sensing or mobility sensing, and includes the converted digital value (sensing value) It generates and outputs sensing data.

The sensing data output from the sensing unit 310 may be stored in the memory 320 or provided to the compensator 330 .

The compensator 330 is configured to perform a characteristic value (eg, threshold voltage, mobility) or a driving transistor (DRT) of a driving transistor (DRT) in a corresponding subpixel based on sensing data stored in the memory 320 or provided from the sensing unit 310 . change in the characteristic value (eg, change in threshold voltage, change in mobility), and perform a characteristic value compensation process.

Here, the change in the characteristic value of the driving transistor DRT may mean that the current sensed data is changed based on the previous sensed data or that the current sensed data is changed based on the reference sensed data.

Here, by comparing a characteristic value or a characteristic value change between the driving transistors DRT, a characteristic value deviation between the driving transistors DRT can be grasped. When the change in the characteristic value of the driving transistor DRT means that the current sensed data is changed based on the reference sensing data, the characteristic value deviation between the driving transistors DRT from the change in the characteristic value of the driving transistor DRT (that is, the sub-pixel luminance deviation) can also figure out

The characteristic value compensation process may include a threshold voltage compensation process for compensating for a threshold voltage of the driving transistor DRT and a mobility compensation process for compensating for mobility of the driving transistor DRT.

The threshold voltage compensation process calculates a compensation value for compensating for a threshold voltage or a threshold voltage deviation (threshold voltage change), and stores the calculated compensation value in the memory 320, or uses the calculated compensation value as the image data (Data) It may include processing to change the .

The mobility compensation process calculates a compensation value for compensating for mobility or mobility deviation (mobility change), and stores the calculated compensation value in the memory 320, or uses the calculated compensation value as the corresponding image data (Data) It may include processing to change the .

The compensator 330 may change the image data through threshold voltage compensation processing or mobility compensation processing and supply the changed data to the corresponding source driver integrated circuit SDIC in the data driver 120 .

Accordingly, the source driver integrated circuit SDIC converts the data changed by the compensator 330 into a data voltage through a digital-to-analog converter (DAC) and supplies it to the corresponding sub-pixel, so that the sub-pixel characteristic value Compensation (threshold voltage compensation, mobility compensation) is actually performed.

As such sub-pixel characteristic value compensation is performed, image quality can be improved by reducing or preventing a luminance deviation between sub-pixels.

6 is an exemplary arrangement view of main signal lines DL, SL, and DVL in the organic light emitting display panel 110 according to the present exemplary embodiments.

Referring to FIG. 6 , in the organic light emitting display panel 110 according to the present exemplary embodiments, data lines DL1 , ... , DL4 , a driving voltage line DVL, and sensing to drive each sub-pixel SP. A line SL is disposed.

In order to increase the aperture ratio of the organic light emitting display panel 110 , in the organic light emitting display panel 110 , one driving voltage line DVL may be disposed for each of the plurality of sub-pixel columns, and one driving voltage line DVL may be disposed for each of the plurality of sub-pixel columns. Five sensing lines SL may be disposed.

For example, when one pixel is composed of four sub-pixels SP1, SP2, SP3, and SP4, that is, one pixel emits red light (R), the first sub-pixel SP1, and white light. When the second sub-pixel SP2 emits light (W), the third sub-pixel SP3 emits blue light (B), and the fourth sub-pixel SP4 emits green light (G), One driving voltage line DVL may be disposed in every four sub-pixel columns, and one sensing line SL may be disposed in one every four sub-pixel columns.

7 is a view for explaining a sensing line defect in the organic light emitting display panel 110 according to the present exemplary embodiments.

Referring to FIG. 7 , in the non-image display area corresponding to the outer region of the image display area of the organic light emitting display panel 110 , the source driver integrated circuit SDIC is directly bonded or the source driver integrated circuit SDIC is mounted. There is a bonding region 700 to which the film is bonded by the conductive ball.

Referring to FIG. 7 , in the bonding area 700 of the organic light emitting display panel 110 , data lines DL1 , ... , DL4 disposed in an active area where an image is displayed are electrically extended signal lines. (B_DL1, ..., B_DL4), the signal line B_DVL to which the driving voltage line DVL disposed in the image display area is electrically extended, and the signal to which the sensing line SL disposed in the image display area is electrically extended A line B_SL exists.

Referring to FIG. 7 , signal lines B_DL1 , ... , B_DL4 in which data lines DL1 , ... , DL4 are electrically extended due to a foreign substance or conductive ball aggregation in the bonding region 700 of the organic light emitting display panel 110 . . ) may cause a signal line fault.

Such signal line defects may also occur in the image display area of the organic light emitting display panel 110 .

In addition, such a signal line defect may also be caused by a short circuit of an internal signal path of the source driver integrated circuit (SDIC).

In particular, when a sensing line defect corresponding to an electrical short of the sensing line SL occurs, a leakage path is generated between the sensing line SL and the adjacent data line DL2, and the driving transistor DRT ) or a sensing operation for sensing the characteristic value of the organic light emitting diode (OLED), an abnormality may occur in the voltage of the sensing line SL, resulting in a sensing error.

Due to such a sensing error, an erroneous compensation value may be calculated, and an image abnormality may occur in the sub-pixel column connected to the sensing line SL.

The sensing line defect may be a permanent defect in which the sensing line SL is permanently short-circuited with the adjacent data line DL.

Alternatively, the sensing line defect may be a progressive defect in which the short circuit between the sensing line SL and the adjacent data line DL2 varies according to a driving environment such as temperature and humidity.

For example, when the resistance between the sensing line SL and the adjacent data line DL2 decreases according to a driving environment such as temperature or humidity, a short circuit occurs between the sensing line SL and the adjacent data line DL.

When the resistance between the sensing line SL and the adjacent data line DL2 increases according to a driving environment such as temperature or humidity, a short circuit between the sensing line SL and the adjacent data line DL2 may not occur.

Such progressive defects are difficult to detect using a general signal line defect detection method.

Hereinafter, a relationship between a sensing line defect and a sensing error will be described with reference to FIGS. 8A to 10 .

8A to 10 are diagrams for explaining a sensing error and image abnormality due to a sensing line defect in the organic light emitting diode display 100 according to the present exemplary embodiment.

8A to 9B , a progressive sensing line defect in which a short circuit between the sensing line SL and the data line DL2 electrically connected to the second sub-pixel SP occurs depending on the driving environment (temperature, humidity, etc.) Assume there is

8A to 9B , since one sensing line SL is commonly connected to the second transistor T2 in the four sub-pixels SP1, ..., SP4, that is, one sensing line SL ) is shared by the four sub-pixels SP1, ..., SP4, so that only one of the four sub-pixels SP1, ..., SP4 can be sensed at a time.

Accordingly, the sensing driving data voltage Vdata_SEN is supplied to the sensed subpixels among the four subpixels SP1, ..., SP4, and the non-sensing driving data voltage Vdata_NO_SEN is supplied to the remaining subpixels.

Here, the sensing driving data voltage Vdata_SEN is higher than the non-sensing driving data voltage Vdata_NO_SEN.

Also, in the sensing driving period, when the sensing line SL is initialized, the reference voltage Vref applied to the sensing line SL is higher than the non-sensing driving data voltage Vdata_NO_SEN.

For example, referring to FIG. 8A , when an arbitrary sensing driving period is a period in which the first subpixel SP1 is sensed among the four subpixels SP1, ..., SP4, in this sensing driving period, the first The data voltage Vdata1 supplied to the sub-pixel SP1 is the sensing driving data voltage Vdata_SEN, the data voltage Vdata2 supplied to the second sub-pixel SP2, and the data voltage Vdata2 supplied to the third sub-pixel SP3 The data voltage Vdata3 and the data voltage Vdata4 supplied to the fourth sub-pixel SP4 are the non-sensing driving data voltages Vdata_NO_SEN.

8A and 9A , the resistance between the data line DL2 and the sensing line SL electrically connected to the second sub-pixel SP decreases according to the driving environment (temperature, humidity, etc.), so that the second sub-pixel SP When a short circuit between the data line DL2 electrically connected to the pixel SP and the sensing line SL occurs in the sensing driving section, the sensing line SL does not show a normal voltage state according to the sensing driving situation, and the sensing line It is affected by the voltage of the adjacent data line DL2 shorted by the defect.

As an example, referring to FIG. 8A , a short circuit occurs between the data line DL2 electrically connected to the second sub-pixel SP2 and the sensing line SL, and the first of the four sub-pixels SP1, ..., SP4 When sensing the characteristic value of the driving transistor DRT or the organic light emitting diode OLED in the first sub-pixel SP1 that is a sub-pixel other than the second sub-pixel SP2, a data line shorted to the sensing line SL A non-sensing driving data voltage Vdata_NO_SEN is applied to (DL2).

Accordingly, the sensing line SL does not maintain the reference voltage Vref or does not become a voltage state suitable for the sensing driving situation, and the effect of the non-sensing driving data voltage Vdata_NO_SEN applied to the short-circuited data line DL2 is not affected. accept and lower

Accordingly, the characteristic value of the driving transistor DRT or the organic light emitting diode OLED in the sub-pixels SP1, SP3, and SP4 other than the second sub-pixel SP2 among the four sub-pixels SP1, ..., SP4. In the sensing driving period in which , the sensing voltage Vsen sensed by the sensing unit 310 is lower than the normal sensing voltage Vsen_Normal as shown in FIG. 8B .

Such a decrease in the sensing value may result in an unnecessarily large compensation value, which may cause a screen abnormality.

As another example, referring to FIG. 9A , a short circuit occurs between the data line DL2 electrically connected to the second subpixel SP2 and the sensing line SL, and among the four subpixels SP1 , ... , SP4 . When sensing the characteristic value of the driving transistor DRT or the organic light emitting diode OLED in the second subpixel SP2, assuming that the sensing driving data voltage Vdata_SEN is higher than the reference voltage Vref, the sensing line ( SL) is increased by the voltage Vdata_SEN of the short-circuited data line DL2.

Accordingly, in the sensing driving period in which the characteristic value of the driving transistor DRT or the organic light emitting diode OLED is sensed in the second sub-pixel SP2 among the four sub-pixels SP1, ..., SP4, the sensing unit 310 ), the sensing voltage Vsen sensed by the voltage of the sensing line SL becomes higher than the normal sensing voltage Vsen_Normal as shown in FIG. 9B .

Such an increase in the sensing value is calculated as a compensation value smaller than a desired level, so that a screen abnormality may occur.

Due to a sensing error caused by a sensing line defect as described above, the characteristic values (eg, threshold voltage, mobility) of the driving transistor (DRT) or the characteristic values (eg, threshold voltage) of the organic light emitting diode (OLED) in each sub-pixel The compensation value for compensating for is erroneously calculated.

When the image is driven using the erroneously calculated compensation value as described above, as shown in FIG. 10 , a screen abnormality may occur in the region 1000 where the subpixel column corresponding to the defective sensing line SL is located. can

Hereinafter, a method for detecting a sensing line defect (eg, a short circuit) that may be progressively generated and a corresponding processing for the sensing line defect and a sensing line defect detection system will be described.

11 is a diagram illustrating a sensing line defect detection system of the organic light emitting diode display 100 according to the present exemplary embodiment.

Referring to FIG. 11 , the sensing line defect detection system of the organic light emitting diode display 100 according to the present exemplary embodiments includes a sensing line defect detection unit 1110 , a sensing line defect response processing unit 1120 , and the like.

The sensing line defect detection unit 1110 is configured such that, during the sensing line defect detection period, the first transistor T1 and the second transistor T2 in each of the subpixels electrically connectable to the sensing line SL are turned off. In a situation, after applying an initialization voltage Vinit for defect detection higher than a voltage applied to a signal line adjacent to the sensing line SL to the sensing line SL, the sensing voltage ( Vsen), it is possible to detect whether the sensing line is defective.

Hereinafter, since the signal line arrangement structure shown in FIG. 6 is taken as an example, the signal line adjacent to the sensing line SL is described as the data line DL.

Also, in the sensing line defect detection period, a voltage applied to the data line DL, which is a signal line adjacent to the sensing line SL, is a data voltage lower than the defect detection initialization voltage Vinit applied to the sensing line SL. It is written as (Vdata_DET).

The signal line adjacent to the sensing line SL may be a driving voltage line DVL or another third signal line according to a signal line arrangement structure.

Here, a situation in which the first transistor T1 and the second transistor T2 in each of the sub-pixels electrically connectable to the sensing line SL to be detected are turned off is the turn-off level voltage VGL ) may be a situation in which the first and second scan signals SCAN1 and SCAN2 are output to all gate lines.

If the above-described sensing line defect detection unit 1110 is used, it is possible to accurately and directly detect whether the sensing line SL is defective, regardless of whether it is a permanent sensing line defect or a progressive sensing line defect.

12 is a diagram illustrating in more detail a sensing line defect detection system of the organic light emitting diode display 100 according to the present exemplary embodiment.

Referring to FIG. 12 , the sensing line defect detection unit 1110 includes a sensing unit 310 , a control unit 1200 , an initialization switch RPRE, a sampling switch SAM, and the like.

When electrically connected to the sensing line SL, the sensing unit 310 may sense the voltage of the sensing line SL, convert the sensed sensing voltage Vsen into a sensing value corresponding to a digital value, and output the sensed value.

The initialization switch RPRE switches the connection between the sensing line SL and the initialization voltage supply node for fault detection.

When the initialization switch RPRE is turned on, the fault detection initialization voltage Vinit is applied to the sensing line SL.

The sampling switch SAM switches the connection between the sensing line SL and the sensing unit 310 .

When the sampling switch SAM is turned on, the sensing line SL and the sensing unit 310 are electrically connected, and the sensing unit 310 may sense the voltage of the sensing line SL.

The control unit 1200 is a configuration for overall controlling the sensing line defect detection driving, and outputs a switch control signal for controlling various switches (RPRE, SAM, SPRE, etc.), and receives a sensed value from the sensing unit 310 . Accordingly, based on the sensing voltage Vsen that sensed the voltage of the sensing line SL, that is, the sensing value, it is determined whether a defect (eg, a short circuit) has occurred in the sensing line SL, and the sensing line is defective. can be detected.

Using the detailed configurations of the sensing line defect detection unit 1110 described above, a sensing line defect may be accurately detected by precisely performing a driving for detecting a sensing line defect.

The sensing unit 310 , the initialization switch RPRE, and the sampling switch SAM included in the sensing line defect detection unit 1110 are, for example, inside or outside the source driver integrated circuit SDIC of the data driver 120 . may be included.

The control unit 1200 included in the sensing line defect detection unit 1110 may be included inside or outside the controller 140 .

The sensing line defect response processing unit 1120 may be included inside or outside the controller 140 .

13 is a diagram for explaining a sensing line defect detection principle of the organic light emitting diode display 100 according to the present exemplary embodiments, and FIG. 14 is a timing diagram for detecting a sensing line defect according to the present exemplary embodiments.

13 and 14 , the sensing line defect detection unit 1110 according to the present exemplary embodiments includes the first transistor T1 in all subpixels electrically connected to the sensing line SL during the sensing line defect detection period. ) and the second transistor T2 are turned off, and the data voltage Vdata_DET is applied to at least one data line DL or all data lines DL adjacent to the sensing line SL. After a predetermined time ΔT has elapsed from the point in time when a specific voltage (hereinafter, referred to as “initialization voltage for defect detection Vinit”) is applied to SL, the voltage of the sensing line SL is sensed, Whether the sensing line SL is defective is detected based on the voltage change of the sensing line SL.

13 and 14 , the sensing line defect detection unit 1110 includes a first transistor T1 and a second transistor ( T1 ) and a second transistor ( To turn off T2), the first scan signal SCAN1 and the second scan signal SCAN2 of the turn-off level may be output to the gate lines through the gate driver 130 .

13 and 14 , the sensing line defect detection unit 1110 transmits a data voltage to at least one data line DL or all data lines DL adjacent to the sensing line SL during the sensing line defect detection period. In order to apply the data voltage (Vdata_DET) to (Vdata_DET), the data voltage (Vdata_DET) is transferred to at least one data line (DL) or all data lines (DL) adjacent to the sensing line (SL) through the data driver 120 (Vdata_DET) can be output as

13 and 14, the sensing line defect detection section includes a sensing line reset section (S1310), a sensing line initialization section (S1320), a sensing line floating section (S1330), and a sensing line sampling section (S1340). .

13 and 14 , in the sensing line initialization period S1320, the initialization switch RPRE is turned on.

Accordingly, the initialization voltage Vinit for defect detection is applied to the sensing line SL.

Thereafter, as the initialization switch RPRE is turned off, a sensing line floating period S1330 proceeds.

When the sensing line floating section S1330 proceeds, the voltage of the sensing line SL may fluctuate according to the presence or absence of a defect in the sensing line SL.

After the initialization switch RPRE is turned off, that is, after the sensing line floating period S1330 starts, when a predetermined floating time ΔT elapses, the sensing line floating period S1330 ends and the sensing line sampling period S1330 ends ( S1340) proceeds.

When the sensing line sampling period S1340 proceeds, that is, after a predetermined floating time ΔT has elapsed from the time when the initialization switch RPRE is turned off, the sampling switch SAM is turned on.

Accordingly, the sensing unit 310 is electrically connected to the sensing line SL.

The voltage state of the sensing line SL may be controlled so that a sensing line defect may be detected through the timing control for the above-described switching operation of the initialization switch RPRE.

In addition, by controlling the timing of the switching operation of the sampling switch SAM, the sensing line SL, which has reached a voltage state capable of detecting a sensing line defect, is connected to the sensing unit 310 so that the sensing unit 310 is connected to the sensing line. It allows for accurate detection of defects.

Referring to FIG. 13 , the sensing line defect detection unit 1110 may further include a reset switch SPRE for switching a connection between the sensing line SL and a reset voltage supply node.

The reset switch SPRE operates the sensing line before the sensing line defect detection driving starts in earnest, that is, before the initialization voltage Vinit for defect detection is applied to the sensing line SL, regardless of the previous driving state. It is a switch for resetting (SL) to a reset voltage (Vreset).

That is, in the sensing line reset period ( S1310 ) that proceeds before the sensing line initialization period ( S1320 ), the reset switch SPRE may be turned on.

When the reset switch SPRE is turned on, the sensing line SL is reset to the reset voltage Vreset.

Here, the reset voltage Vreset may be 0 [V] or may be determined according to the voltage of the sensing line SL before the sensing line defect detection period and the initialization voltage Vinit for defect detection.

Referring to FIG. 14 , when the reset switch SPRE is turned on and then turned off, the initialization switch RPRE may be turned on.

By resetting the sensing line SL to the reset voltage Vreset before initializing the sensing line SL to the initialization voltage Vinit for defect detection through the above-described reset switch SPRE, the sensing line SL can be initialized more accurately and quickly.

On the other hand, in the sensing line defect detection section, as the potential difference between the initialization voltage Vinit for defect detection initialized to the sensing line SL and the data voltage Vdata_DET applied to the data line DL increases, the sensing line defect detection becomes more difficult. You can relax and be precise.

For example, the data voltage Vdata_DET may be a black data voltage corresponding to 0 [V] or a voltage near it. The initialization voltage Vinit for defect detection is a voltage higher than the data voltage Vdata_DET and may be about 5 [V].

If the sensing line SL is defective, when a predetermined time elapses, a leakage current is generated from the sensing line SL to the sensing line SL and the short-circuited data line DL, and the sensing line SL ) may converge to the data voltage Vdata_DET or the ground voltage 0 [V] or a corresponding voltage applied to the data line DL during the sensing line defect detection period.

If the sensing line voltage change characteristic is used, a sensing line defect caused by a short between the sensing line SL and the data line DL adjacent to each other may be detected.

15 is a graph illustrating a voltage change of the sensing line SL according to the presence or absence of a sensing line defect in the sensing line defect detection section according to the present embodiments.

Referring to FIG. 15 , when the sensing line SL is not shorted with the data line DL, the sensing line SL applies the fault detection initialization voltage Vinit or similar voltage applied in step S1320 to steps S1330 and S1340. also keep

On the other hand, when the sensing line SL is short-circuited with the data line DL, the sensing line SL fails to maintain the fault detection initialization voltage Vinit or similar voltage applied in step S1320 at S1330, and is short-circuited. The voltage drops under the influence of the data line DL.

Referring to FIG. 15 , the sensing line defect detection unit 1110 initializes the sensing line SL to an initialization voltage Vinit for defect detection and then turns off the initialization switch RPRE to float the sensing line SL. When a predetermined floating time ΔT passes from (Vinit), it may be determined that a sensing line defect does not occur.

This is because the sensing line SL is not short-circuited with the data line DL, so the sensing line SL may maintain the fault detection initialization voltage Vinit or similar voltage applied in step S1320 in steps S1330 and S1340. .

Referring to FIG. 15 , the sensing line defect detection unit 1110 initializes the sensing line SL to an initialization voltage Vinit for defect detection and then turns off the initialization switch RPRE to float the sensing line SL. When a predetermined floating time ΔT has elapsed from , the sensing voltage Vsen2 sensing the voltage of the sensing line SL is lower than the defect detection initialization voltage Vinit or exceeds a predetermined range for fault detection. When it is lower than the voltage Vinit, it is determined that a sensing line defect has occurred and the sensing line defect may be detected.

As described above, after the sensing line SL is initialized to the initialization voltage Vinit for defect detection, the sensing line SL is floated for a predetermined floating time ΔT to determine whether the voltage of the sensing line SL is changed ( Alternatively, the sensing line defect can be accurately detected according to the amount of voltage change).

On the other hand, if there is no sensing line defect when the sensing line SL is floated for a predetermined floating time ΔT after initializing the sensing line SL to an initialization voltage Vinit for defect detection, in an ideal situation, the sensing line ( SL) must maintain the initialization voltage Vinit for fault detection.

However, when the sensing line SL is floated for a predetermined floating time ΔT after initializing the sensing line SL to the initialization voltage Vinit for defect detection, even if there is no sensing line defect, in reality, the sensing line ( The voltage of SL) may be lowered without maintaining the initialization voltage Vinit for defect detection.

In consideration of such an actual situation, a method of determining whether a sensing line is defective will be described below.

16 is another graph illustrating a voltage change of the sensing line SL according to the presence or absence of a sensing line defect in the sensing line defect detection section according to the present embodiments.

Referring to FIG. 16 , the sensing line defect detection unit 1110 initializes the sensing line SL to the defect detection initialization voltage Vinit and then turns off the initialization switch RPRE to float the sensing line SL. When a predetermined floating time ΔT elapses from When it is lowered by ΔV1 and is higher than the reference sensing voltage Vsen_REF (Vsen1 > Vsen_REF), it is determined that a sensing line defect does not occur.

Referring to FIG. 16 , the sensing line defect detection unit 1110 performs the sensing line SL at a time point when a predetermined floating time ΔT elapses from the time point when the initialization voltage Vinit for defect detection is applied to the sensing line SL. ) is lower than the initialization voltage Vinit for defect detection, but is lowered by ΔV2 (> ΔV1) from the initialization voltage Vinit for defect detection, which is lower than the reference sensing voltage Vsen_REF. (Vsen2 < Vsen_REF, Vsen2 < Vsen1), the sensing line defect may be detected by determining that a sensing line defect has occurred.

According to the above-described method for determining whether the sensing line is defective, the normal voltage drop of the sensing line SL and the sensing line ( SL) voltage drop can be distinguished, so that more accurate sensing line fault detection can be performed.

The above-mentioned reference sensing voltage Vsen_REF is a voltage sensed by the non-defective sensing line SL, and may be a predetermined set value, or the sensing unit 310 for other sensing lines SL in the sensing line defect detection section. It may be a measured value sensed by

For example, when the sensing line defect detection driving is simultaneously performed with respect to the plurality of sensing lines SL, the average value of the remaining sensing voltages except for the abnormally small sensing voltage Vsen of each of the plurality of sensing lines SL, or , may be one of the remaining sensing voltages.

An abnormally small sensing voltage (a voltage sensed by a defective sensing line SL) among sensing voltages Vsen of each of the plurality of sensing lines SL.

17 is a view for explaining a method of responding to a sensing line defect detection of the organic light emitting diode display 100 according to the present exemplary embodiment.

Referring to FIG. 17 , the sensing line defect response processing unit 1120 includes a plurality of subpixels SP1 and SP2 electrically connected to the first sensing line SL1 detected as having a defect by the sensing line defect detection unit 1110 . , SP3, SP4) do not update the sensing value or compensation value for each.

Alternatively, the sensing line defect response processing unit 1120 includes a plurality of subs electrically connected to the first sensing line SL1 and the second sensing line SL2 adjacent to the sensing line defect detecting unit 1110 , which detects that a defect has occurred. For each of the pixels SP5, SP6, SP7, and SP8, the sensing value or compensation value stored in the memory 320 is applied to the plurality of sub-pixels SP1 and SP2 electrically connected to the first sensing line SL1 detected as having a defect. , SP3, SP4) may be updated and stored in the memory 320 as a sensing value or compensation value for each.

Referring to FIG. 17 , four subpixels SP5 , SP6 , SP7 , SP8 electrically connected to the second sensing line SL2 and four subpixels SP1 electrically connected to the first sensing line SL1 , Since SP2, SP3, and SP4) may have the same emission color in order, driving characteristics may be similar to each other.

That is, SP1 and SP5 have similar driving characteristics. SP2 and SP6 have similar driving characteristics. SP3 and SP7 have similar driving characteristics. SP4 and SP8 have similar driving characteristics.

As described above, according to the sensing line defect response processing method, the sensing value or compensation value for each of the four sub-pixels SP1, SP2, SP3, and SP4 electrically connected to the defective first sensing line SL1 is determined. By not updating, it is possible to prevent screen abnormalities from occurring due to incorrect sensing values or incorrect compensation values.

Also, as described above, according to the sensing line defect response processing method, the sensing value or compensation for each of the four sub-pixels SP3, SP4, SP5, and SP6 electrically connected to the adjacent second sensing line SL2 having no defects. By copying the value and using it as a sensing value or compensation value for each of the four sub-pixels SP1, SP2, SP3, and SP4 electrically connected to the defective first sensing line SL1, a normal sensing value or compensation value It can show image quality almost similar to that using .

Hereinafter, a driving method for detecting a sensing line defect described above will be briefly described.

18 is a flowchart illustrating a method of driving the organic light emitting display device 100 for detecting a sensing line defect according to the present exemplary embodiments.

Referring to FIG. 16 , in the method of driving the organic light emitting display device 100 for detecting a sensing line defect according to the present exemplary embodiments, the first transistor T1 and the second transistor T2 are turned off. , a sensing line initialization step S1820 of applying an initialization voltage Vinit for defect detection higher than the data voltage applied to the data line DL to the sensing line SL, and floating the sensing line SL to float the sensing line SL Step S1830, sensing line voltage sensing step S1840 of sensing the voltage of the sensing line SL, and detecting whether a sensing line is defective based on the sensing voltage Vsen sensing the voltage of the sensing line SL It may include a sensing line defect detection step (S1850) and the like.

By using the above-described driving method, it is possible to accurately and directly detect whether the sensing line SL is defective, regardless of whether the sensing line defect is permanently generated or the sensing line defect is progressively generated.

Referring to FIG. 18 , before the sensing line initialization step S1820 , in a situation in which the first transistor T1 and the second transistor T2 are turned off, a sensing line for applying a reset voltage to the sensing line SL A reset step (S1810) may be further included.

Referring to FIG. 18 , when it is detected that a sensing line defect has occurred in the sensing line defect detection step after the sensing line defect detection step S1850, a subpixel electrically connected to the sensing line SL detected as having a defect ( Failing to update the sensing value or compensation value for SP) The method may further include a sensing line defect response processing step ( S1860 ) of storing a sensing value or a compensation value for the subpixel SP electrically connected to the sensing line SL detected as having occurred.

When the above-described sensing line defect response processing step S1860 is performed, the sensing value or compensation value for the sub-pixel electrically connected to the defective sensing line SL is not updated, so that an incorrect sensing value or incorrect compensation value is detected. This can prevent screen abnormalities from occurring.

Alternatively, if the sensing line defect response processing step S1860 is performed, even if the image driving is not performed using the actual sensing value or compensation value for the subpixel SP electrically connected to the defective sensing line SL , since image driving is performed by replacing a sensing value or compensation value for a sub-pixel that is connected to a defect-free sensing line and has very similar driving characteristics, it hardly causes image quality degradation or image heterogeneity. We can provide you with countermeasures for defects.

19 is an exemplary diagram of a sensing line defect detection section according to the present embodiments.

Referring to FIG. 19 , before the sensing line initialization step S1820 , the characteristic value of the driving transistor DRT or the organic light emitting diode OLED in each subpixel SP arranged in the organic light emitting display panel 110 is sensed. The method may further include a characteristic value sensing and compensation step (S1900) of storing a sensed value for each subpixel SP, calculating a compensation value for compensating a characteristic value based on the sensed value, and storing the value for each subpixel SP. .

Through the characteristic value sensing and compensation step S1900 , the sensing value or compensation value for each subpixel stored in the memory 320 may be used in the sensing line defect response processing step S1860 .

20 is a diagram illustrating a screen in which an abnormal screen phenomenon is prevented through detection of a sensing line defect according to the present embodiments.

Referring to FIG. 20 , a sensing value obtained through a defective sensing line SL by detecting a defect in the sensing line SL using the sensing line defect detecting method according to the present embodiments or a compensation calculated therefrom The sub connected to the defective sensing line SL does not perform image driving by using the value as it is, but performs image driving by replacing the sensing value obtained through the normal sensing line SL or a compensation value calculated therefrom. It is possible to prevent a screen abnormality with respect to the region 1000 having pixel columns.

According to the present embodiments as described above, the organic light emitting diode display 100 capable of accurately detecting a defect in a sensing line required to sense a characteristic value of a sub-pixel (a characteristic value of a driving transistor or an organic light emitting diode) and the same A driving method may be provided.

In addition, according to the present embodiments, the organic light emitting display device 100 and a driving method thereof are provided, which enable accurate detection even for a progressive sensing line defect that may be defective depending on a driving environment such as temperature, humidity, etc. can do.

In addition, according to the present embodiments, it is possible to provide the organic light emitting display device 100 capable of accurately detecting a defect in a sensing line and preventing a screen abnormality through appropriate corresponding processing, and a driving method thereof.

The above description and the accompanying drawings are merely illustrative of the technical spirit of the present invention, and those of ordinary skill in the art to which the present invention pertains can combine configurations within a range that does not depart from the essential characteristics of the present invention. , various modifications and variations such as separation, substitution and alteration will be possible. Accordingly, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but to explain, and the scope of the technical spirit of the present invention is not limited by these embodiments. The protection scope of the present invention should be construed by the following claims, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of the present invention.

100: organic light emitting display device
110: organic light emitting display panel
120: data driver
130: gate driver
140: controller

Claims (10)

A plurality of subpixels defined by a plurality of data lines and a plurality of gate lines are arranged, and each subpixel includes an organic light emitting diode, a driving transistor for driving the organic light emitting diode, and a first node of the driving transistor and a first transistor electrically connected between a data line, a second transistor electrically connected between a second node of the driving transistor and a sensing line, and a storage electrically connected between the first node and a second node of the driving transistor an organic light emitting display panel on which a capacitor is disposed;
a data driver driving the plurality of data lines;
a gate driver driving the plurality of gate lines; and
and a sensing line defect detection unit configured to detect whether the sensing line is defective,
The sensing line defect detection unit,
During the sensing line defect detection period, in a situation in which the first transistor and the second transistor are turned off,
After applying an initialization voltage for defect detection higher than a voltage applied to a signal line adjacent to the sensing line to the sensing line,
An organic light emitting display device for detecting whether the sensing line is defective based on the sensing voltage sensed by the voltage of the sensing line. According to claim 1,
The sensing line defect detection unit,
an initialization switch for switching a connection between the sensing line and an initialization voltage supply node for fault detection;
a sensing unit sensing the voltage of the sensing line;
a sampling switch for switching a connection between the sensing line and the sensing unit; and
and a controller configured to detect whether the sensing line is defective based on the sensed voltage sensed by the sensing line. 3. The method of claim 2,
The initialization switch is turned on to apply the initialization voltage for fault detection to the sensing line,
After a predetermined floating time has elapsed from a point in time when the initialization switch is turned off, the sampling switch is turned on to connect the sensing unit and the sensing line. 3. The method of claim 2,
Further comprising a reset switch for switching the connection between the sensing line and the reset voltage supply node,
When the reset switch is turned on and then turned off, the initialization switch is turned on. According to claim 1,
The sensing line defect detection unit,
When a predetermined floating time elapses from the point of floating the sensing line after initializing the sensing line to the initialization voltage for defect detection,
An organic light emitting diode display for detecting that a defect has occurred in the sensing line when the sensing voltage sensing the voltage of the sensing line is lower than the initializing voltage for detecting the defect. According to claim 1,
The sensing line defect detection unit,
When a predetermined floating time elapses from the point of floating the sensing line after initializing the sensing line to the initialization voltage for defect detection,
An organic light emitting diode display for detecting that a defect has occurred in the sensing line when the sensing voltage sensing the voltage of the sensing line is lower than the initializing voltage for detecting the defect and lower than the reference sensing voltage. According to claim 1,
A signal line adjacent to the sensing line is a data line,
The voltage applied to the signal line adjacent to the sensing line is a data voltage. According to claim 1,
A sensing value or compensation value for a subpixel electrically connected to a first sensing line detected as a defect by the sensing line defect detection unit is not updated, or a second sensing line electrically connected to the first sensing line is not updated. The organic light emitting diode display further comprising: a sensing line defect response processing unit configured to update and store the sensing value or compensation value for the subpixel as the sensing value or compensation value for the subpixel electrically connected to the first sensing line. A plurality of subpixels defined by a plurality of data lines and a plurality of gate lines are arranged, and each subpixel includes an organic light emitting diode, a driving transistor for driving the organic light emitting diode, and a first node of the driving transistor and a first transistor electrically connected between a data line, a second transistor electrically connected between a second node of the driving transistor and a sensing line, and a storage electrically connected between the first node and a second node of the driving transistor A driving method of an organic light emitting display device comprising: an organic light emitting display panel having a capacitor disposed thereon; a data driver driving the plurality of data lines; and a gate driver driving the plurality of gate lines;
a sensing line initialization step of applying a fault detection initialization voltage higher than a voltage applied to a signal line adjacent to the sensing line to the sensing line when the first transistor and the second transistor are turned off;
a sensing line floating step of floating the sensing line;
a sensing line voltage sensing step of sensing the voltage of the sensing line; and
and a sensing line defect detection step of detecting whether the sensing line is defective based on the sensing voltage sensed by the sensing line voltage. 10. The method of claim 9,
After the sensing line defect detection step,
When it is detected that a defect in the sensing line has occurred in the sensing line defect detection step,
not updating the sensing value or compensation value for the sub-pixel electrically connected to the sensing line;
A sensing line defect response processing step of updating and storing a sensing value or compensation value for a sub-pixel electrically connected to the sensing line and adjacent to the sensing line as a sensing value or compensation value for a sub-pixel electrically connected to the sensing line is further performed A method of driving an organic light emitting display device comprising:

Images