KR102362040B1 - Shield film and semi-conductor device, and method for manufacturing the same - Google Patents

Abstract

A shielding film, a semiconductor device, and a method of manufacturing the same, wherein the shielding film according to an embodiment includes a magnetic layer having a magnetic field shielding function, and a polymer layer stacked to form an interface with the magnetic layer, wherein the magnetic layer is an interface with the polymer layer or a concave-convex region formed over at least a partial area of the face opposite to the interface.

Description

Shielding film, semiconductor device, and manufacturing method thereof

FIELD OF THE INVENTION The present invention relates to shielding films and semiconductor devices comprising such shielding films and methods of manufacturing them.

Electronic products generally generate electromagnetic waves. An electromagnetic wave refers to a wave that is a combination of an electric field and a magnetic field, which spreads into space.

The electric field constituting the electromagnetic wave can be easily shielded by using a conductor. For example, the electric field may be shielded by grounding the roof, wall, floor, or the like of a building to the ground or using a shielding material such as grounded aluminum.

In the case of a magnetic field that composes electromagnetic waves together with an electric field, shielding is possible only by using a special material with high magnetic permeability. This magnetic field is particularly harmful to the human body and may cause noise or malfunction in industrial and household devices.

On the other hand, a shielding film having a magnetic field is used to shield such a magnetic field, and the shielding film having a magnetic field shielding function is used in many industrial sites including a process of manufacturing a semiconductor device.

However, a semiconductor device using a shielding film is in an environment that is subjected to various stresses during a manufacturing process, and such a stress environment also induces deformation such as warpage of the semiconductor device.

Korean Patent Registration Publication, No. 10-1939653 (published on Jan. 11, 2019)

According to the embodiment, a shielding film capable of suppressing stress applied to an attachment object and a method for manufacturing the same are provided.

Also provided are a semiconductor device using a shielding film capable of suppressing stress applied to an object to be attached, and a method for manufacturing the same.

However, the problems to be solved of the present invention are not limited to those mentioned above, and other problems to be solved that are not mentioned can be clearly understood by those of ordinary skill in the art to which the present invention belongs from the following description. will be.

A shielding film according to a first aspect includes a magnetic layer having a magnetic field shielding function, and a polymer layer laminated to form an interface with the magnetic layer, wherein the magnetic layer is formed over at least a partial area of the interface or a surface opposite to the interface It has an uneven area.

A semiconductor device according to a second aspect includes a substrate, a semiconductor element disposed on the substrate, a protective layer formed on the substrate and the semiconductor element, and a shielding film disposed on the protective layer to shield a magnetic field and the shielding film includes a magnetic layer having a magnetic field shielding function, and a polymer layer laminated to form an interface with the magnetic layer, wherein the magnetic layer is formed over at least a partial area of the interface or a surface opposite to the interface. has

A method for manufacturing a shielding film according to a third aspect includes the steps of preparing a magnetic layer having a magnetic field shielding function, forming an uneven region over at least a partial area of one surface of the magnetic layer, and an interface with one or the other surface of the magnetic layer Laminating a polymer layer to form a.

A semiconductor device manufacturing method according to a fourth aspect comprises the steps of: disposing a semiconductor element on a substrate; forming a protective layer on the substrate and the semiconductor element; and a shielding film for shielding a magnetic field on the protective layer. laminating, wherein the laminating of the shielding film includes: preparing a magnetic layer having a magnetic field shielding function; forming a concave-convex region over at least a partial area of one surface of the magnetic layer; or laminating a polymer layer to form an interface with the other surface.

According to an embodiment, by forming the uneven region on one surface of the magnetic layer constituting the shielding film, stress applied to an object to be attached to which the shielding film is to be attached may be suppressed. For example, when the shielding film is used to provide a magnetic field shielding function for a semiconductor element in a semiconductor device, the shielding film has an effect of preventing the semiconductor assembly to which the shielding film is attached from warping due to temperature change.

1 is a perspective view of a shielding film according to a first embodiment of the present invention.
FIG. 2 is a cross-sectional view of the shielding film shown in FIG. 1 as viewed from the front.
3 is a view illustrating a normal state and a deformed state of a shielding film.
4 is a cross-sectional view of a shielding film according to a second exemplary embodiment of the present invention as viewed from the front.
5 is a cross-sectional view of a shielding film according to a third exemplary embodiment of the present invention as viewed from the front.
6 is a cross-sectional view of a shielding film according to a fourth embodiment of the present invention as viewed from the front.
7 is a flowchart illustrating a process of manufacturing a shielding film using an etching mask according to an embodiment of the present invention.
8 to 16 are diagrams illustrating various examples of an etch mask that can be used to pattern a magnetic layer.
17 is a cross-sectional view illustrating a structure of a semiconductor device including a shielding film according to various embodiments of the present disclosure.
18 is a flowchart illustrating a process of manufacturing a semiconductor device according to an embodiment of the present invention.

Advantages and features of the present invention and methods of achieving them will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms, and only these embodiments allow the disclosure of the present invention to be complete, and common knowledge in the art to which the present invention pertains It is provided to fully inform those who have the scope of the invention, and the present invention is only defined by the scope of the claims.

Terms used in this specification will be briefly described, and the present invention will be described in detail.

The terms used in the present invention have been selected as currently widely used general terms as possible while considering the functions in the present invention, but these may vary depending on the intention or precedent of a person skilled in the art, the emergence of new technology, and the like. In addition, in a specific case, there is a term arbitrarily selected by the applicant, and in this case, the meaning will be described in detail in the description of the corresponding invention. Therefore, the term used in the present invention should be defined based on the meaning of the term and the overall content of the present invention, rather than the name of a simple term.

When a part 'includes' a certain component throughout the specification, this means that other components may be further included, rather than excluding other components, unless otherwise stated.

Hereinafter, with reference to the accompanying drawings, the embodiments of the present invention will be described in detail so that those of ordinary skill in the art can easily implement them. In describing embodiments of the present invention with reference to the drawings, if it is determined that a detailed description of a well-known function or configuration may unnecessarily obscure the gist of the present invention, the detailed description thereof will be omitted. In addition, the terms to be described later are terms defined in consideration of functions in an embodiment of the present invention, which may vary according to intentions or customs of users and operators. Therefore, the definition should be made based on the content throughout this specification.

1 is a perspective view of a shielding film according to a first embodiment of the present invention, and FIG. 2 is a cross-sectional view of the shielding film shown in FIG. 1 viewed from the front.

1 and 2 , the shielding film 110 includes a magnetic layer 111 and a polymer layer 112 .

The magnetic layer 111 has a magnetic field shielding function. The magnetic layer 111 has an uneven region formed over at least a partial area of the interface with the polymer layer 112 . For example, the uneven region may be formed over the entire interface with the polymer layer 112 . For example, a plurality of grooves may be formed in the uneven region, and the grooves may have a hemispherical cross-sectional shape. These grooves may be formed to have a predetermined length along one direction, and the direction in which the grooves are formed may be determined in consideration of a direction in which an object to be attached of the shielding film 110 is bent due to a change in temperature. For example, as in the example of FIG. 3 , when there is a risk that the object to be attached of the shielding film 110 is deformed from the normal state 201 to the crying state 202 due to a temperature change, the shielding film 110 By forming the groove in the direction of the arrow 203, it is possible to prepare in advance for the risk of deformation. The direction of these grooves will be described again below.

This magnetic layer 111 may also be referred to as a magnetic foil, iron (Fe)-nickel (Ni) alloy, steel (steel), iron-silicon-based alloy, cobalt (Co), iron oxide (Fe ₂ O ₃ , Fe ₃ O) ₄ ), chromium oxide, sendust, ferrite, permalloy, nanocrystal grains, nanoparticulate magnetic material, and amorphous particulate magnetic material may include at least one or mixed particles thereof. Here, the iron-nickel alloy may include iron, nickel, and permalloy, the steel may include stainless steel, and the ferrite may include, but is not limited to, FeMn-based ferrite or FeZn-based ferrite. At this time, in the case of sendust, it may have magnetic particles in the form of powders of an alloy in which aluminum, silicon, etc. are added to iron. These magnetic particles are in the form of amorphous magnetic powder or soft magnetic powder including nanocrystalline magnetic powder. can be provided.

The polymer layer 112 is stacked to form an interface with the magnetic layer 111 . The polymer layer 112 may be an adhesive layer that provides bonding strength when the shielding film 110 including the magnetic layer 111 and the polymer layer 112 is attached to an attachment object such as a semiconductor assembly.

4 is a cross-sectional view of a shielding film according to a second exemplary embodiment of the present invention as viewed from the front.

Referring to FIG. 4 , the shielding film 120 includes a magnetic layer 121 and a polymer layer 122 stacked to form an interface with each other, and the magnetic layer 121 is opposite to the interface with the polymer layer 122 . and a concave-convex region formed over at least a partial area of . For example, the concave-convex region may be formed over the entire surface opposite to the interface with the polymer layer 112 . For example, a plurality of grooves may be formed in the uneven region, and the grooves may have a hemispherical cross-sectional shape.

5 is a cross-sectional view of a shielding film according to a third exemplary embodiment of the present invention as viewed from the front.

Referring to FIG. 5 , the shielding film 130 includes a first polymer layer 132 and a second polymer layer 133 stacked with a magnetic layer 131 interposed therebetween. Here, the magnetic layer 131 has an uneven region formed over at least a partial area of the interface with the second polymer layer 132 . For example, the concave-convex region may be formed over the entire surface opposite to the interface with the polymer layer 112 . For example, a plurality of grooves may be formed in the uneven region, and the grooves may have a quadrangular cross-sectional shape.

The first polymer layer 132 is another layer (eg, a conductive layer, etc.) that can be laminated on top of the shielding film 130 when the shielding film 130 is attached to an attachment object such as a semiconductor assembly to constitute a semiconductor device. It can provide adhesion with the That is, the first polymer layer 132 may be an adhesive layer that provides a bonding force between the magnetic layer 131 and another layer to be stacked thereon. In addition, the first polymer layer 132 may be used as a laser marking area for displaying various types of information using letters or numbers.

When comparing the shielding film 110 and the shielding film 130 according to the first embodiment of the present invention, which has been described with reference to FIGS. 1 and 2 , the magnetic layer 111 of FIG. 1 and the magnetic layer 131 of FIG. 4 . ) can be seen to correspond, and the polymer layer 112 of FIG. 1 and the second polymer layer 133 of FIG. 4 can be seen to correspond. Comparing the polymer layer 112 of FIGS. 1 and 2 with the second polymer layer 133 of FIG. 4 , it can be seen that the second polymer layer 133 has an uneven region on its lower surface. The formation of the uneven region on the lower surface of the second polymer layer 133 is due to the shape of the uneven region of the magnetic layer 111, and the magnetic layer 131 and the second polymer layer 133 are laminated through lamination. It is naturally generated on the lower surface of the second polymer layer 133 in response to the uneven region formed on the interface with the magnetic layer 131 in the middle.

6 is a cross-sectional view of a shielding film according to a fourth embodiment of the present invention as viewed from the front.

Referring to FIG. 6 , the shielding film 140 includes a first polymer layer 142 and a second polymer layer 143 stacked with a magnetic layer 141 interposed therebetween. Here, the magnetic layer 141 has an uneven region formed over at least a partial area of the interface with the second polymer layer 142 . For example, the uneven region may be formed over the entire interface with the second polymer layer 143 . For example, a plurality of grooves may be formed in the uneven region, and the grooves may have a hemispherical cross-sectional shape.

Comparing the shielding film 110 and the shielding film 130 according to the third embodiment of the present invention that has been described with reference to FIG. 5 , the magnetic layer 131 of FIG. 5 and the magnetic layer 141 of FIG. 6 correspond It can be seen that the first polymer layer 132 of FIG. 5 and the first polymer layer 142 of FIG. 6 correspond to each other, and the second polymer layer 133 of FIG. 5 and the second polymer of FIG. 6 . It can be seen that the layer 143 corresponds.

In the embodiments described with reference to FIGS. 1 to 6 , the cross-sectional shape of the groove formed in the concave-convex region is a square or hemispherical shape, but it may be deformed into a triangle or polygon, etc., and includes only any one shape as the shape of the groove However, a plurality of forms may be mixed.

Although not shown in FIGS. 1 to 6 , a base film (not shown) may be disposed under the polymer layers 112 and 122 or the second polymer layers 133 and 143 . Such a base film may be removed during a process in which the shielding films 110, 120, 130, and 140 are applied to a predetermined product, for example, in a process in which the shielding films 110, 120, 130, and 140 are attached to an attachment object such as a semiconductor assembly. In this way, when the base film (not shown) is removed, the magnetic layers 111 , 121 , 131 , 141 and the object to be attached such as a semiconductor assembly are polymer layers 112 and 122 or second polymer layers 133 and 134 . can be adhered to each other.

As described with reference to FIGS. 1 to 6 , the shielding films 110 , 120 , 130 , and 140 according to various embodiments according to the present invention may be configured in various shapes. The shielding films 110 , 120 , 130 , and 140 include magnetic layers 111 , 121 , 131 and 141 having a magnetic field shielding function. In addition, it further includes polymer layers 112 and 122 or second polymer layers 133 and 143 stacked to form an interface with the magnetic layers 111 , 121 , 131 , and 141 . In addition, the magnetic layers 111, 121, 131, and 141 include a concave-convex region formed over at least a partial area of an interface with the polymer layer 112, 122 or the second polymer layer 133, 143 or a surface opposite to the interface. do.

Hereinafter, in looking at the method of manufacturing the shielding films 110, 120, 130, and 140 according to the embodiments of the present invention, the shielding film 140 according to the fourth embodiment of the present invention shown in FIG. Let's take a look at the manufacturing process representatively. The manufacturing method to be described below can be performed by a shielding film manufacturing apparatus or system designed to perform the steps to be described below.

First, the magnetic layer 141 having a magnetic field shielding function is prepared. For example, the magnetic layer 141 may include at least one of iron-nickel alloy, steel, iron-silicon-based alloy, cobalt, iron oxide, chromium oxide, sendust, ferrite, permalloy, nanocrystal grains, nanoparticulate magnetic material, and amorphous particulate magnetic material or its mixed particles. Here, the iron-nickel alloy may include iron, nickel, and permalloy, the steel may include stainless steel, and the ferrite may include, but is not limited to, FeMn-based ferrite or FeZn-based ferrite. At this time, in the case of Sendust, it may have magnetic particles in the form of powders of an alloy in which aluminum, silicon, etc. are added to iron. These magnetic particles are in the form of amorphous magnetic powder or soft magnetic powder including nanocrystalline magnetic powder. can be provided.

Then, a concave-convex region is formed over at least a partial area of one surface of the prepared magnetic layer 141 .

Here, in order to form the uneven region in the magnetic layer 141 , the uneven region may be formed in the magnetic layer 141 by pressing one surface of the magnetic layer 141 using a mold corresponding to the shape of the uneven region.

Alternatively, an etch mask may be used to form the concave-convex region in the magnetic layer 141 . 7 is a flowchart illustrating a process of manufacturing a shielding film using an etching mask according to an embodiment of the present invention.

7, after preparing the magnetic layer 141 (S310), a sacrificial film (eg, photoresist) is laminated on one surface of the magnetic layer 141, and the laminated sacrificial film is patterned to have a stripe or a grid pattern, Concave-convex regions may be formed in the magnetic layer 141 by wet or dry etching one surface of the magnetic layer 141 using the patterned sacrificial layer as an etching mask ( S320 ). 8 to 16 illustrate various examples of an etch mask that can be used to pattern the magnetic layer 141 . By using the etching mask having various shapes, it is possible to create a concave-convex region including grooves having various shapes in the magnetic layer 141 . When the etching mask of FIG. 8 is used, the groove 401 may be formed in the magnetic layer 141 with a predetermined length in one direction. When the etch mask of FIG. 9 or 10 is used, the plurality of concavo-convex regions may be separated by the non-convex region 402 . Using the etching mask of FIGS. 11 and 12 , a plurality of grooves 403 and 404 of various sizes can be grouped and these groove groups can be arranged at predetermined intervals. If the etching mask of FIGS. 13 and 14 is used, the groove may be formed in an oblique shape. By using the etching mask of FIGS. 15 and 16 , the grooves can be formed in a lattice shape having various sizes and intervals.

Referring back to FIG. 7 , a first polymer layer 142 is stacked on the patterned magnetic layer 141 . For example, when the first polymer layer 142 is laminated on the magnetic layer 141 , it is possible to provide adhesion with another layer (eg, a conductive layer, etc.) that may be laminated on the shielding film 140 . can make it happen For example, the first polymer layer 142 stacked in this way may be used as a laser marking area for displaying various types of information using letters or numbers.

Next, a second polymer layer 143 is laminated on the lower portion of the magnetic layer 141 laminated with the first polymer layer 142 . The second polymer layer 143 stacked in this way may serve as an adhesive layer that provides bonding strength when the shielding film 140 is attached to an attachment object such as a semiconductor assembly. Here, a concave-convex region may be formed on the lower surface of the second polymer layer 143 . As such, the formation of the concave-convex region on the lower surface of the second polymer layer 133 is due to the shape of the concave-convex region of the magnetic layer 141, and the process in which the magnetic layer 141 and the second polymer layer 143 are laminated through lamination. It is naturally generated on the lower surface of the second polymer layer 143 in response to the uneven region formed on the interface with the magnetic layer 141 in the middle.

17 is a cross-sectional view illustrating a structure of a semiconductor device including a shielding film according to various embodiments of the present disclosure.

Referring to FIG. 17 , the semiconductor device 400 according to the embodiment may include a semiconductor assembly 410 , a shielding film 420 , and a conductive layer 430 , and the semiconductor assembly 410 includes a substrate 411 , It may include a semiconductor device 412 and a protective layer 413 .

The substrate 411 is a configuration provided so that various types of components can be mounted thereon. For example, the substrate 411 may include a printed circuit board or the like.

The semiconductor device 412 is a configuration designed to perform various functions. For example, the semiconductor device 412 may include an active device such as a transistor or a diode, as well as a passive device such as a capacitor, an inductor, or a resistor. At least one such semiconductor device 412 is disposed (mounted) on one surface of the substrate 411 . In addition, although not shown in the drawing, the semiconductor devices 412 disposed on the substrate 411 as described above are connected to traces to exchange electrical signals with each other or with an external configuration.

The passivation layer 413 is disposed on the substrate 411 to surround the semiconductor device 412 . This protective layer 413 has insulating properties. In addition, the protective layer 413 may structurally support the semiconductor device 412 disposed on one surface of the substrate 411 or protect it from external contamination. For example, the protective layer 413 may be formed of an EMC (Epoxy Molding Compound) layer through a molding process using an epoxy resin or the like.

The shielding film 420 has a magnetic field shielding function. Such a shielding film 420 has already been described with reference to FIGS. 1 to 6 . When the shielding film 420 is formed on the upper surface of the protective layer 413 , the polymer layers 112 and 122 or the second polymer layers 133 and 143 include the magnetic layers 111 , 121 , 131 , 141 and the protective layer 413 . ) can be an adhesive layer that provides bonding between them. The shielding of the magnetic field by the shielding film 420 means that the magnetic field flows along the magnetic layers 111 , 121 , 131 , and 141 of the shielding film 420 and does not pass through or pass through the semiconductor device 412 .

The conductive layer 430 is disposed on the shielding film 420 . In addition, the conductive layer 430 may be disposed to surround the side surfaces of each of the semiconductor assembly 410 and the shielding film 420 when viewed from the cross-section shown in FIG. 17 . The conductive layer 430 may include at least one of aluminum (Al), copper (Cu), tin (Sn), nickel (Ni), gold (Au), silver (Ag), and other conductive materials. The conductive layer 430 has an electric field shielding function.

The structure of the semiconductor device 400 according to the embodiment of the present invention is not limited to the cross-sectional view shown in FIG. 17 . That is, according to the embodiment, the semiconductor device 400 provides adhesion between various components not shown in FIG. 17 , for example, a ground layer, traces for transmitting electrical signals to the semiconductor element 412 , or the above-described components. It may additionally include an adhesive layer and the like. Also, the semiconductor device 400 may not include at least some of the components illustrated in the drawings, for example, the protective layer 413 or the conductive layer 430 , according to an embodiment.

18 is a flowchart illustrating a process of manufacturing a semiconductor device according to an embodiment of the present invention.

A process for manufacturing a semiconductor device according to an embodiment of the present invention will be described with reference to FIGS. 17 and 18 . The manufacturing method to be described below can be performed by a semiconductor device manufacturing apparatus or system designed to perform the steps to be described below.

First, a substrate 411 is prepared. For example, a printed circuit board may be prepared (S510).

Then, the semiconductor device 412 is disposed on the substrate 411 . For example, the substrate 411 and the semiconductor device 412 may be electrically connected using a solder ball ( S520 ).

Thereafter, a protective layer 413 is formed on the substrate 411 on which the semiconductor device 412 is disposed. For example, the passivation layer 413 may be formed on the substrate 411 to surround the semiconductor device 412 . For example, an EMC (Epoxy Molding Compound) layer may be formed as the protective layer 413 through a molding process using an epoxy resin or the like (S530).

Next, a shielding film 420 is laminated on the protective layer 413 . A method of manufacturing such a shielding film 420 has been previously described with reference to FIG. 7 . When the shielding film 420 is formed on the upper surface of the protective layer 413 , the polymer layers 112 and 122 or the second polymer layers 133 and 143 include the magnetic layers 111 , 121 , 131 , 141 and the protective layer 413 . ) may provide a bonding force between them (S540).

Thereafter, a conductive layer 430 is disposed on the shielding film 420 . For example, the conductive layer 430 may be disposed to surround the side surfaces of each of the semiconductor assembly 410 and the shielding film 420 when viewed from the cross-section shown in FIG. 17 . For example, the conductive layer 430 may be disposed through a physical vapor deposition method using at least one of Al, Cu, Sn, Ni, Au, Ag, and other conductive materials ( S550 ).

As described so far, according to embodiments of the present invention, by forming the uneven region on one surface of the magnetic layer constituting the shielding film, stress applied to the object to be attached to which the shielding film is to be attached can be suppressed. For example, when the shielding film is used to provide a magnetic field shielding function for a semiconductor element in a semiconductor device, the shielding film prevents the semiconductor assembly to which the shielding film is attached from warping due to temperature change.

Combinations of each step in each flowchart attached to the present invention may be performed by computer program instructions. These computer program instructions may be embodied in a processor of a general purpose computer, special purpose computer, or other programmable data processing equipment, such that the instructions performed by the processor of the computer or other programmable data processing equipment provide the functions described in each step of the flowchart. It creates a means to do these things. These computer program instructions may also be stored in a computer-usable or computer-readable medium that may direct a computer or other programmable data processing equipment to implement a function in a particular manner, and thus the computer-usable or computer-readable medium. The instructions stored in the recording medium are also possible to produce an article of manufacture including instruction means for performing the functions described in each step of the flowchart. The computer program instructions may also be mounted on a computer or other programmable data processing equipment, such that a series of operational steps are performed on the computer or other programmable data processing equipment to create a computer-executed process to create a computer or other programmable data processing equipment. It is also possible that instructions for performing the processing equipment provide steps for performing the functions described in each step of the flowchart.

Further, each step may represent a module, segment, or portion of code comprising one or more executable instructions for executing the specified logical function(s). It should also be noted that in some alternative embodiments it is also possible for the functions recited in the steps to occur out of order. For example, it is possible that two steps shown one after another may in fact be performed substantially simultaneously, or that the steps may sometimes be performed in the reverse order according to the corresponding function.

The above description is merely illustrative of the technical spirit of the present invention, and various modifications and variations will be possible without departing from the essential characteristics of the present invention by those skilled in the art to which the present invention pertains. Accordingly, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but to explain, and the scope of the technical spirit of the present invention is not limited by these embodiments. The protection scope of the present invention should be construed by the following claims, and all technical ideas within the equivalent range should be construed as being included in the scope of the present invention.

110, 120, 130, 140, 420: shielding film
111, 121, 131, 141: magnetic layer
112, 122: polymer layer
132, 142: first polymer layer
133, 143: second polymer layer
400: semiconductor device
412: semiconductor element
413: protective layer

Claims (16)

a magnetic layer having a magnetic field shielding function;
a first polymer layer disposed on one surface of the magnetic layer to form an interface with the magnetic layer; and
and a second polymer layer disposed on the other surface that is opposite to one surface of the magnetic layer,
The magnetic layer has a concave-convex region formed over at least a partial area of the interface,
The first polymer layer,
Having a protrusion that engages the concave-convex region of the magnetic layer over at least a part of the interface, and a concave-convex region having a shape corresponding to the concave-convex region of the magnetic layer over at least a partial area of a surface opposite to the interface;
shielding film. The method of claim 1,
A plurality of grooves are formed in the concave-convex region, and the grooves have a cross-sectional shape of any one of a triangle, a square, a polygon, and a hemispherical shape, or a plurality of shapes are mixed.
shielding film. The method of claim 1,
In the concave-convex region, a concave groove is formed with a predetermined length in one direction,
The one direction is
When the object to be attached of the shielding film is deformed to a cry state due to a change in temperature, the direction perpendicular to the bending direction on the plane is,
shielding film. 4. The method of claim 3,
The concave-convex region is plural,
The plurality of concavo-convex regions are separated by non-convex regions.
shielding film. board and
a semiconductor device disposed on the substrate;
a protective layer formed on the substrate and the semiconductor device;
and a shielding film disposed on the protective layer to shield a magnetic field,
The shielding film is
a magnetic layer having a magnetic field shielding function;
a first polymer layer disposed on one surface of the magnetic layer to form an interface with the magnetic layer; and
and a second polymer layer disposed on the other surface that is opposite to one surface of the magnetic layer,
The magnetic layer has a concave-convex region formed over at least a partial area of the interface or a surface opposite to the interface,
The first polymer layer,
Having a protrusion that engages the concave-convex region of the magnetic layer over at least a part of the interface, and a concave-convex region having a shape corresponding to the concave-convex region of the magnetic layer over at least a partial area of a surface opposite to the interface;
semiconductor device. 6. The method of claim 5,
A plurality of grooves are formed in the concave-convex region, and the grooves have a cross-sectional shape of any one of a triangle, a square, a polygon, and a hemispherical shape, or a plurality of shapes are mixed.
semiconductor device. 6. The method of claim 5,
In the concave-convex region, a concave groove is formed with a predetermined length in one direction,
The one direction is
When the object to be attached of the shielding film is deformed to a cry state due to a change in temperature, the direction perpendicular to the bending direction on the plane is,
semiconductor device. 6. The method of claim 5,
The concave-convex region is plural,
The plurality of concavo-convex regions are separated by non-convex regions.
semiconductor device. Preparing a magnetic layer having a magnetic field shielding function;
forming an uneven region over at least a partial area of one surface of the magnetic layer;
laminating a first polymer layer on one surface of the magnetic layer to form an interface with the magnetic layer; and
Laminating a second polymer layer on the other surface opposite to the one surface of the magnetic layer,
The first polymer layer,
Having a protrusion engaged with the concave-convex region of the magnetic layer over at least a portion of the interface, and a concave-convex region having a shape corresponding to the concave-convex region of the magnetic layer over at least a partial area of a surface opposite to the interface;
A method for manufacturing a shielding film. 10. The method of claim 9,
The step of forming the concave-convex region includes pressing one surface of the magnetic layer using a mold.
A method for manufacturing a shielding film. 10. The method of claim 9,
The forming of the concave-convex region may include etching one surface of the magnetic layer using a patterned etch mask.
A method for manufacturing a shielding film. 12. The method of claim 11,
The step of forming the concave-convex region comprises:
stacking a sacrificial film on one surface of the magnetic layer;
patterning the sacrificial film to have a stripe or a grid pattern;
etching one surface of the magnetic layer using the patterned sacrificial layer as the etch mask
A method for manufacturing a shielding film. disposing a semiconductor device on a substrate;
forming a protective layer on the substrate and the semiconductor device;
Laminating a shielding film for shielding a magnetic field on the protective layer,
Laminating the shielding film comprises:
Preparing a magnetic layer having a magnetic field shielding function;
forming an uneven region over at least a partial area of one surface of the magnetic layer;
laminating a first polymer layer on one surface of the magnetic layer to form an interface with the magnetic layer; and
Laminating a second polymer layer on the other surface opposite to the one surface of the magnetic layer,
The first polymer layer,
Having a protrusion that engages the concave-convex region of the magnetic layer over at least a part of the interface, and a concave-convex region having a shape corresponding to the concave-convex region of the magnetic layer over at least a partial area of a surface opposite to the interface;
A method of manufacturing a semiconductor device. 14. The method of claim 13,
The step of forming the concave-convex region includes pressing one surface of the magnetic layer using a mold.
A method of manufacturing a semiconductor device. 14. The method of claim 13,
The forming of the concave-convex region may include etching one surface of the magnetic layer using a patterned etch mask.
A method of manufacturing a semiconductor device. 16. The method of claim 15,
The step of forming the concave-convex region comprises:
stacking a sacrificial film on one surface of the magnetic layer;
patterning the sacrificial film to have a stripe or a grid pattern;
etching one surface of the magnetic layer using the patterned sacrificial layer as the etch mask
A method of manufacturing a semiconductor device.

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