KR102352097B1 - 멀티 빔 컬럼 내에서의 감소된 쿨롱 상호작용 - Google Patents

멀티 빔 컬럼 내에서의 감소된 쿨롱 상호작용 Download PDF

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KR102352097B1
KR102352097B1 KR1020197036059A KR20197036059A KR102352097B1 KR 102352097 B1 KR102352097 B1 KR 102352097B1 KR 1020197036059 A KR1020197036059 A KR 1020197036059A KR 20197036059 A KR20197036059 A KR 20197036059A KR 102352097 B1 KR102352097 B1 KR 102352097B1
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South Korea
Prior art keywords
electron beam
lens array
aperture
apertures
electron
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English (en)
Korean (ko)
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KR20190138898A (ko
Inventor
앨런 디. 브로디
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케이엘에이 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/061—Construction

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electron Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Radiation-Therapy Devices (AREA)
  • Particle Accelerators (AREA)
KR1020197036059A 2017-05-05 2018-01-12 멀티 빔 컬럼 내에서의 감소된 쿨롱 상호작용 Active KR102352097B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/587,720 2017-05-05
US15/587,720 US10242839B2 (en) 2017-05-05 2017-05-05 Reduced Coulomb interactions in a multi-beam column
PCT/US2018/013425 WO2018203936A1 (en) 2017-05-05 2018-01-12 Reduced coulomb interactions in a multi-beam column

Publications (2)

Publication Number Publication Date
KR20190138898A KR20190138898A (ko) 2019-12-16
KR102352097B1 true KR102352097B1 (ko) 2022-01-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020197036059A Active KR102352097B1 (ko) 2017-05-05 2018-01-12 멀티 빔 컬럼 내에서의 감소된 쿨롱 상호작용

Country Status (7)

Country Link
US (1) US10242839B2 (https=)
EP (1) EP3549154A4 (https=)
JP (2) JP2020518990A (https=)
KR (1) KR102352097B1 (https=)
CN (1) CN110313048B (https=)
IL (1) IL267815B (https=)
WO (1) WO2018203936A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11615938B2 (en) * 2019-12-20 2023-03-28 Nuflare Technology, Inc. High-resolution multiple beam source
KR102830218B1 (ko) 2020-01-06 2025-07-08 에이에스엠엘 네델란즈 비.브이. 하전 입자 평가 툴, 검사 방법
US12451319B2 (en) 2020-10-05 2025-10-21 Kla Corporation Electron source with magnetic suppressor electrode
US11699564B2 (en) * 2020-10-23 2023-07-11 Nuflare Technology, Inc. Schottky thermal field emitter with integrated beam splitter
US11869743B2 (en) * 2021-05-11 2024-01-09 Kla Corporation High throughput multi-electron beam system
US11651934B2 (en) 2021-09-30 2023-05-16 Kla Corporation Systems and methods of creating multiple electron beams

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040141169A1 (en) * 2002-10-30 2004-07-22 Wieland Marco Jan-Jaco Electron beam exposure system
JP2005057110A (ja) * 2003-08-06 2005-03-03 Canon Inc マルチ荷電ビームレンズおよびそれを用いた荷電ビーム露光装置
US20080023643A1 (en) * 2006-07-25 2008-01-31 Pieter Kruit Multiple beam charged particle optical system
US20170025241A1 (en) * 2015-07-21 2017-01-26 Hermes Microvision, Inc. Apparatus of Plural Charged-Particle Beams

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4419182A (en) * 1981-02-27 1983-12-06 Veeco Instruments Inc. Method of fabricating screen lens array plates
JP4647820B2 (ja) * 2001-04-23 2011-03-09 キヤノン株式会社 荷電粒子線描画装置、および、デバイスの製造方法
JP2003077814A (ja) * 2001-09-05 2003-03-14 Nikon Corp 荷電粒子線露光装置の結像性能の計測方法及びその計測装置、荷電粒子線露光装置
US6768125B2 (en) * 2002-01-17 2004-07-27 Ims Nanofabrication, Gmbh Maskless particle-beam system for exposing a pattern on a substrate
GB2408143B (en) * 2003-10-20 2006-11-15 Ims Nanofabrication Gmbh Charged-particle multi-beam exposure apparatus
US7176459B2 (en) 2003-12-25 2007-02-13 Ebara Corporation Electron beam apparatus
KR101099487B1 (ko) * 2004-05-17 2011-12-28 마퍼 리쏘그라피 아이피 비.브이. 대전 입자 빔 노광 시스템
JP5663717B2 (ja) * 2005-09-06 2015-02-04 カール ツァイス マイクロスコピー ゲーエムベーハーＣａｒｌ Ｚｅｉｓｓ Ｍｉｃｒｏｓｃｏｐｙ Ｇｍｂｈ 荷電粒子システム
KR101464388B1 (ko) * 2006-07-25 2014-11-21 마퍼 리쏘그라피 아이피 비.브이. 다중 빔 대전 입자 광학 시스템
KR101118692B1 (ko) * 2006-10-11 2012-03-12 전자빔기술센터 주식회사 자기 렌즈층을 포함한 전자 칼럼
JP5103033B2 (ja) * 2007-03-02 2012-12-19 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置
US7821187B1 (en) * 2007-09-07 2010-10-26 Kla-Tencor Corporation Immersion gun equipped electron beam column
US7960697B2 (en) 2008-10-23 2011-06-14 Hermes-Microvision, Inc. Electron beam apparatus
JP2011059057A (ja) * 2009-09-14 2011-03-24 Fujitsu Ltd 電子スピン分析器及び表面観察装置
US8294125B2 (en) * 2009-11-18 2012-10-23 Kla-Tencor Corporation High-sensitivity and high-throughput electron beam inspection column enabled by adjustable beam-limiting aperture
US9184024B2 (en) 2010-02-05 2015-11-10 Hermes-Microvision, Inc. Selectable coulomb aperture in E-beam system
TWI593961B (zh) * 2010-12-15 2017-08-01 日立全球先端科技股份有限公司 Charged particle line application device, and irradiation method
US8362425B2 (en) 2011-03-23 2013-01-29 Kla-Tencor Corporation Multiple-beam system for high-speed electron-beam inspection
KR20120128105A (ko) * 2011-05-16 2012-11-26 캐논 가부시끼가이샤 묘화 장치 및 물품의 제조 방법
US8618480B2 (en) * 2012-03-23 2013-12-31 Hermes Microvision Inc. Charged particle beam apparatus
EP2879155B1 (en) * 2013-12-02 2018-04-25 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi-beam system for high throughput EBI
JP2016197503A (ja) * 2015-04-02 2016-11-24 株式会社ニューフレアテクノロジー 電子ビーム装置
US9607805B2 (en) * 2015-05-12 2017-03-28 Hermes Microvision Inc. Apparatus of plural charged-particle beams
KR20240042242A (ko) 2015-07-22 2024-04-01 에이에스엠엘 네델란즈 비.브이. 복수의 하전 입자 빔을 이용하는 장치

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040141169A1 (en) * 2002-10-30 2004-07-22 Wieland Marco Jan-Jaco Electron beam exposure system
JP2005057110A (ja) * 2003-08-06 2005-03-03 Canon Inc マルチ荷電ビームレンズおよびそれを用いた荷電ビーム露光装置
US20080023643A1 (en) * 2006-07-25 2008-01-31 Pieter Kruit Multiple beam charged particle optical system
US20170025241A1 (en) * 2015-07-21 2017-01-26 Hermes Microvision, Inc. Apparatus of Plural Charged-Particle Beams

Also Published As

Publication number Publication date
WO2018203936A1 (en) 2018-11-08
US10242839B2 (en) 2019-03-26
CN110313048A (zh) 2019-10-08
JP2020518990A (ja) 2020-06-25
IL267815A (en) 2019-09-26
US20180323034A1 (en) 2018-11-08
IL267815B (en) 2022-08-01
EP3549154A1 (en) 2019-10-09
JP2022058874A (ja) 2022-04-12
KR20190138898A (ko) 2019-12-16
JP7329637B2 (ja) 2023-08-18
CN110313048B (zh) 2021-03-12
EP3549154A4 (en) 2020-07-22

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