KR102345172B1 - 기판 탈가스용 챔버 - Google Patents
기판 탈가스용 챔버 Download PDFInfo
- Publication number
- KR102345172B1 KR102345172B1 KR1020187029133A KR20187029133A KR102345172B1 KR 102345172 B1 KR102345172 B1 KR 102345172B1 KR 1020187029133 A KR1020187029133 A KR 1020187029133A KR 20187029133 A KR20187029133 A KR 20187029133A KR 102345172 B1 KR102345172 B1 KR 102345172B1
- Authority
- KR
- South Korea
- Prior art keywords
- slit
- workpiece
- pockets
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000007872 degassing Methods 0.000 title claims description 46
- 239000000758 substrate Substances 0.000 title description 24
- 238000005338 heat storage Methods 0.000 claims abstract description 30
- 238000012546 transfer Methods 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims description 65
- 238000012545 processing Methods 0.000 claims description 46
- 238000010438 heat treatment Methods 0.000 claims description 41
- 238000001816 cooling Methods 0.000 claims description 28
- 238000011068 loading method Methods 0.000 claims description 25
- 238000002955 isolation Methods 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 230000002441 reversible effect Effects 0.000 claims description 8
- 238000011010 flushing procedure Methods 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 3
- 239000012530 fluid Substances 0.000 claims description 2
- 238000007669 thermal treatment Methods 0.000 claims 13
- 238000013022 venting Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 95
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 238000010943 off-gassing Methods 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000010926 purge Methods 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- 239000000047 product Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000012864 cross contamination Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000003570 air Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000012432 intermediate storage Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000009489 vacuum treatment Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010410 dusting Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D5/00—Supports, screens or the like for the charge within the furnace
- F27D5/0037—Supports specially adapted for semi-conductors
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D9/00—Cooling of furnaces or of charges therein
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D9/00—Cooling of furnaces or of charges therein
- F27D2009/007—Cooling of charges therein
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Tunnel Furnaces (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Vacuum Packaging (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2016/054909 WO2017152958A1 (en) | 2016-03-08 | 2016-03-08 | Chamber for degassing substrates |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20180123522A KR20180123522A (ko) | 2018-11-16 |
| KR102345172B1 true KR102345172B1 (ko) | 2021-12-31 |
Family
ID=55527913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020187029133A Active KR102345172B1 (ko) | 2016-03-08 | 2016-03-08 | 기판 탈가스용 챔버 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US11776825B2 (enExample) |
| EP (1) | EP3427291B1 (enExample) |
| JP (1) | JP6800237B2 (enExample) |
| KR (1) | KR102345172B1 (enExample) |
| CN (1) | CN108780766B (enExample) |
| WO (1) | WO2017152958A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10998209B2 (en) | 2019-05-31 | 2021-05-04 | Applied Materials, Inc. | Substrate processing platforms including multiple processing chambers |
| US11901198B2 (en) * | 2019-07-12 | 2024-02-13 | Axcelis Technologies, Inc. | Toxic outgas control post process |
| KR102707382B1 (ko) * | 2020-06-10 | 2024-09-13 | 삼성전자주식회사 | 매거진 지지 장치 및 이를 포함하는 반도체 제조 장비 |
| US12080571B2 (en) | 2020-07-08 | 2024-09-03 | Applied Materials, Inc. | Substrate processing module and method of moving a workpiece |
| US11749542B2 (en) | 2020-07-27 | 2023-09-05 | Applied Materials, Inc. | Apparatus, system, and method for non-contact temperature monitoring of substrate supports |
| US11817331B2 (en) | 2020-07-27 | 2023-11-14 | Applied Materials, Inc. | Substrate holder replacement with protective disk during pasting process |
| US11747660B2 (en) * | 2020-07-28 | 2023-09-05 | HKC Corporation Limited | Degassing machine and degassing system |
| US11600507B2 (en) | 2020-09-09 | 2023-03-07 | Applied Materials, Inc. | Pedestal assembly for a substrate processing chamber |
| US11610799B2 (en) | 2020-09-18 | 2023-03-21 | Applied Materials, Inc. | Electrostatic chuck having a heating and chucking capabilities |
| US12195314B2 (en) | 2021-02-02 | 2025-01-14 | Applied Materials, Inc. | Cathode exchange mechanism to improve preventative maintenance time for cluster system |
| US11674227B2 (en) | 2021-02-03 | 2023-06-13 | Applied Materials, Inc. | Symmetric pump down mini-volume with laminar flow cavity gas injection for high and low pressure |
| US12002668B2 (en) | 2021-06-25 | 2024-06-04 | Applied Materials, Inc. | Thermal management hardware for uniform temperature control for enhanced bake-out for cluster tool |
| CN119465018B (zh) * | 2025-01-13 | 2025-04-18 | 上海陛通半导体能源科技股份有限公司 | 一种用于pvd设备的脱气腔 |
| CN119465019B (zh) * | 2025-01-13 | 2025-04-18 | 上海陛通半导体能源科技股份有限公司 | 一种半导体元器件高温脱气之后快速冷却装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000504876A (ja) | 1996-02-16 | 2000-04-18 | イートン コーポレーション | 加工物にイオン注入するためのイオン注入装置 |
| US7381052B2 (en) | 2002-01-24 | 2008-06-03 | Applied Materials, Inc. | Apparatus and method for heating substrates |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3656454A (en) | 1970-11-23 | 1972-04-18 | Air Reduction | Vacuum coating apparatus |
| US5607009A (en) | 1993-01-28 | 1997-03-04 | Applied Materials, Inc. | Method of heating and cooling large area substrates and apparatus therefor |
| FR2747112B1 (fr) * | 1996-04-03 | 1998-05-07 | Commissariat Energie Atomique | Dispositif de transport d'objets plats et procede de transfert de ces objets entre ledit dispositif et une machine de traitement |
| US6602348B1 (en) * | 1996-09-17 | 2003-08-05 | Applied Materials, Inc. | Substrate cooldown chamber |
| US6460369B2 (en) | 1999-11-03 | 2002-10-08 | Applied Materials, Inc. | Consecutive deposition system |
| SG185822A1 (en) | 2000-02-01 | 2012-12-28 | Tokyo Electron Ltd | Substrate processing apparatus and substrate processing method |
| US6698718B2 (en) * | 2001-08-29 | 2004-03-02 | Wafermasters, Inc. | Rotary valve |
| JP4821074B2 (ja) | 2001-08-31 | 2011-11-24 | 東京エレクトロン株式会社 | 処理システム |
| US6497734B1 (en) * | 2002-01-02 | 2002-12-24 | Novellus Systems, Inc. | Apparatus and method for enhanced degassing of semiconductor wafers for increased throughput |
| JP4319434B2 (ja) * | 2003-03-11 | 2009-08-26 | 東京エレクトロン株式会社 | ゲートバルブ及び真空容器 |
| US7282097B2 (en) * | 2004-06-14 | 2007-10-16 | Applied Materials, Inc. | Slit valve door seal |
| KR20060033234A (ko) | 2004-10-14 | 2006-04-19 | 삼성전자주식회사 | 급속 열처리 장치 |
| US20060156979A1 (en) | 2004-11-22 | 2006-07-20 | Applied Materials, Inc. | Substrate processing apparatus using a batch processing chamber |
| US20060127067A1 (en) | 2004-12-13 | 2006-06-15 | General Electric Company | Fast heating and cooling wafer handling assembly and method of manufacturing thereof |
| US7665951B2 (en) * | 2006-06-02 | 2010-02-23 | Applied Materials, Inc. | Multiple slot load lock chamber and method of operation |
| WO2008144670A1 (en) * | 2007-05-18 | 2008-11-27 | Brooks Automation, Inc. | Load lock fast pump vent |
| CN101620988A (zh) * | 2008-06-30 | 2010-01-06 | 佳能安内华股份有限公司 | 堆叠装载锁定室及包含其的衬底处理设备 |
| US8420981B2 (en) | 2009-11-13 | 2013-04-16 | Tel Nexx, Inc. | Apparatus for thermal processing with micro-environment |
| US20120220116A1 (en) | 2011-02-25 | 2012-08-30 | Applied Materials, Inc. | Dry Chemical Cleaning For Semiconductor Processing |
| US20120285621A1 (en) * | 2011-05-10 | 2012-11-15 | Applied Materials, Inc. | Semiconductor chamber apparatus for dielectric processing |
| KR101898677B1 (ko) * | 2012-04-30 | 2018-09-13 | 삼성전자주식회사 | 멀티 스택 큐어 시스템 및 그 운전 방법 |
| KR101224520B1 (ko) * | 2012-06-27 | 2013-01-22 | (주)이노시티 | 프로세스 챔버 |
| US20140273525A1 (en) | 2013-03-13 | 2014-09-18 | Intermolecular, Inc. | Atomic Layer Deposition of Reduced-Leakage Post-Transition Metal Oxide Films |
| WO2014143846A1 (en) * | 2013-03-15 | 2014-09-18 | Applied Materials, Inc | Multi-position batch load lock apparatus and systems and methods including same |
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| US9349620B2 (en) | 2014-07-09 | 2016-05-24 | Asm Ip Holdings B.V. | Apparatus and method for pre-baking substrate upstream of process chamber |
| CN110120360B (zh) * | 2014-12-11 | 2023-01-13 | 瑞士艾发科技 | 用于衬底脱气的室 |
| US10403552B1 (en) * | 2018-04-02 | 2019-09-03 | Varian Semiconductor Equipment Associates, Inc. | Replacement gate formation with angled etch and deposition |
-
2016
- 2016-03-08 WO PCT/EP2016/054909 patent/WO2017152958A1/en not_active Ceased
- 2016-03-08 EP EP16709913.4A patent/EP3427291B1/en active Active
- 2016-03-08 CN CN201680083323.9A patent/CN108780766B/zh active Active
- 2016-03-08 JP JP2018547428A patent/JP6800237B2/ja active Active
- 2016-03-08 KR KR1020187029133A patent/KR102345172B1/ko active Active
- 2016-03-08 US US16/083,123 patent/US11776825B2/en active Active
-
2023
- 2023-08-23 US US18/454,374 patent/US20230395402A1/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000504876A (ja) | 1996-02-16 | 2000-04-18 | イートン コーポレーション | 加工物にイオン注入するためのイオン注入装置 |
| US7381052B2 (en) | 2002-01-24 | 2008-06-03 | Applied Materials, Inc. | Apparatus and method for heating substrates |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3427291B1 (en) | 2022-04-13 |
| CN108780766B (zh) | 2022-03-04 |
| KR20180123522A (ko) | 2018-11-16 |
| JP6800237B2 (ja) | 2020-12-16 |
| EP3427291A1 (en) | 2019-01-16 |
| US11776825B2 (en) | 2023-10-03 |
| WO2017152958A1 (en) | 2017-09-14 |
| JP2019515484A (ja) | 2019-06-06 |
| CN108780766A (zh) | 2018-11-09 |
| US20190096715A1 (en) | 2019-03-28 |
| US20230395402A1 (en) | 2023-12-07 |
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Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20211018 |
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Comment text: Registration of Establishment Patent event date: 20211227 Patent event code: PR07011E01D |
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