KR102336087B1 - Resin compositions - Google Patents

Abstract

[Problem] A resin composition from which an insulating layer excellent in flame retardancy, peel strength with a conductor layer, and reflow resistance is obtained; Provision of a resin sheet, a circuit board, a semiconductor chip package, and a semiconductor device using the same.
[Solutions] (a) (i) a butadiene structural unit which may be hydrogenated, and (ii) a compound having at least one structural unit selected from the group consisting of a biphenylene-type phenol structural unit and a naphthol aralkyl structural unit; (b) a resin composition containing an epoxy resin having two or more epoxy groups and one or more aromatic rings in one molecule, and (c) an inorganic filler, wherein the (c) inorganic filler contains 100% by mass of a nonvolatile component of the resin composition When it is set as 30 mass % or more, the resin composition.

Description

Resin composition {RESIN COMPOSITIONS}

The present invention relates to a resin composition. Moreover, it is related with the resin sheet, the circuit board, the semiconductor chip package, and the semiconductor device which used the resin composition.

In recent years, the demand for small and high-performance electronic devices such as smart phones and tablet devices is increasing, and accordingly, the insulating material (insulating layer) used in these small-sized electronic devices is also required to be highly functional.

It is known that such an insulating layer is formed by curing a resin composition (for example, refer to Patent Document 1).

Japanese Laid-Open Patent Publication No. 2015-82535

In recent years, in the electrical and electronic industry, a material having excellent flame retardancy is required even if it does not contain bromine and chlorine, and an insulating layer used for the electronic device is also required to have excellent flame retardancy even if it does not contain bromine and chlorine. Moreover, it is calculated|required that the insulating layer is excellent in peeling strength and reflow tolerance.

Resin composition from which this invention was made|formed in order to solve the said subject, and the insulating layer excellent in peeling strength with conductor layers, such as a flame retardance and copper foil, and reflow resistance is obtained; It is to provide a resin sheet, a circuit board, and a semiconductor chip package using the same, and a semiconductor device.

The present inventors provide a compound having at least one structural unit selected from the group consisting of (a) (i) a butadiene structural unit which may be hydrogenated, and (ii) a biphenylene-type phenol structural unit and a naphthol aralkyl structural unit; (b) a resin composition containing an epoxy resin having two or more epoxy groups and one or more aromatic rings in one molecule, and (c) an inorganic filler, wherein the content of the component (c) is 100% by mass of the nonvolatile component of the resin composition When it was set as 30 mass % or more, it revealed that the insulating layer excellent in a flame retardance, the peeling strength with a conductor layer, and reflow tolerance was obtained, and came to complete this invention.

That is, the present invention includes the following contents.

[1] (a) (i) a butadiene structural unit which may be hydrogenated, and (ii) a compound having at least one structural unit selected from the group consisting of a biphenylene-type phenol structural unit and a naphthol aralkyl structural unit;

(b) an epoxy resin having two or more epoxy groups and one or more aromatic rings in one molecule, and

(c) a resin composition containing an inorganic filler,

(d) The resin composition whose inorganic filler is 30 mass % or more, when the non-volatile component of a resin composition is 100 mass %.

[2] an epoxy resin in which the component (b) has two or more epoxy groups, one or more aromatic rings and fluorine atoms in one molecule; bisphenol A epoxy resin; bisphenol F-type epoxy resin; an epoxy resin having two or more epoxy groups and one or more biphenyl structures in one molecule; an epoxy resin having two or more epoxy groups and one or more condensed rings in one molecule; an epoxy resin having two or more epoxy groups and one or more xylene structures in one molecule; an epoxy resin having one or more glycidylamino groups, one or more epoxy groups, and one or more aromatic rings in one molecule; an epoxy resin having two or more epoxy groups, one or more aromatic rings, and a dicyclopentadienyl structure in one molecule; and at least one selected from the group consisting of an epoxy resin having two or more glycidyloxybenzene structures in one molecule, the resin composition according to [1].

[3] (b) an epoxy resin in which the component has two or more epoxy groups, one or more aromatic rings and fluorine atoms in one molecule; an epoxy resin having two or more epoxy groups and one or more biphenyl structures in one molecule; an epoxy resin having two or more epoxy groups and one or more condensed rings in one molecule; an epoxy resin having two or more epoxy groups and one or more xylene structures in one molecule; and at least one selected from the group consisting of an epoxy resin having two or more epoxy groups, one or more aromatic rings, and a dicyclopentadienyl structure in one molecule, the resin composition according to [1] or [2].

[4] The resin composition according to any one of [1] to [3], wherein the number average molecular weight of the component (a) is 1000 to 20000.

[5] The resin composition according to any one of [1] to [4], wherein the content of the component (a) is 3% by mass to 40% by mass when the nonvolatile component of the resin composition is 100% by mass.

[6] The resin composition according to any one of [1] to [5], wherein the content of the component (b) is 2% by mass to 30% by mass when the nonvolatile component of the resin composition is 100% by mass.

[7] The resin composition according to any one of [1] to [6], wherein the epoxy equivalent of the component (b) is 200 or more.

[8] The resin composition according to any one of [1] to [7], further comprising (d) a phenoxy resin.

[9] The resin composition according to [8], wherein the component (d) is a phenoxy resin containing a bisphenol AF structure.

[10] The resin composition according to [8] or [9], wherein the content of the component (d) is 1% by mass to 20% by mass when the nonvolatile component of the resin composition is 100% by mass.

[11] The resin composition according to any one of [1] to [10], further comprising (e) a curing agent.

[12] The resin composition according to any one of [1] to [11], further comprising (g) a flame retardant.

[13] The resin composition according to [12], wherein the content of the component (g) is 1% by mass to 20% by mass when the nonvolatile component of the resin composition is 100% by mass.

[14] A resin sheet comprising a support and a resin composition layer provided on the support and comprising the resin composition according to any one of [1] to [13].

[15] The resin sheet according to [14], which is a resin sheet for an insulating layer of a semiconductor chip package.

[16] A circuit board comprising an insulating layer formed of a cured product of the resin composition according to any one of [1] to [13];

[17] A semiconductor chip package in which a semiconductor chip is mounted on the circuit board according to [16].

[18] A semiconductor chip package comprising the resin composition according to any one of [1] to [13], or a semiconductor chip sealed by the resin sheet according to [14] or [15].

According to this invention, the resin composition from which the insulating layer excellent in a flame retardance, the peeling strength with a conductor layer, and reflow tolerance is obtained; A resin sheet, a circuit board, a semiconductor chip package, and a semiconductor device using the same can be provided.

BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic sectional drawing which shows an example in the case of the process (3) forming a via hole in an insulating layer, forming a conductor layer, and connecting wiring layers between layers in the manufacturing method of the circuit board of this invention.
Fig. 2 is a schematic cross-sectional view showing an example in the case of the method for manufacturing a circuit board of the present invention, wherein the step (3) is a step of grinding or grinding the insulating layer to expose the wiring layer to connect the wiring layers between layers.
3 is a schematic cross-sectional view illustrating an example of a semiconductor chip package (fan-out type WLP) of the present invention.

EMBODIMENT OF THE INVENTION Hereinafter, the resin composition of this invention, a resin sheet, a circuit board, a semiconductor chip package, and a semiconductor device are demonstrated in detail.

[resin composition]

The resin composition of the present invention comprises at least one structural unit selected from the group consisting of (a) (i) a butadiene structural unit which may be hydrogenated, and (ii) a biphenylene-type phenol structural unit and a naphtholaralkyl structural unit. A resin composition containing a compound having, (b) an epoxy resin having two or more epoxy groups and one or more aromatic rings in one molecule, and (c) an inorganic filler, wherein (c) the inorganic filler contains a nonvolatile component of the resin composition When it is set as 100 mass %, it is 30 mass % or more.

MEANS TO SOLVE THE PROBLEM The present inventors discovered that the heat resistance and flame retardance of the insulating layer which hardened the resin composition improved by containing the epoxy resin which has one or more aromatic rings, as a result of earnest research. Moreover, it discovered that the compatibility with respect to the resin composition of (a) component improved by containing (b) component in a resin composition. By containing the component (b) to increase the compatibility of the component (a), and by containing the component (c) in a predetermined amount, separation of component (a) at the interface between the insulating layer and the conductor layer in which the resin composition is cured, etc. - Since precipitation is suppressed, it is thought that peeling strength and reflow tolerance improve.

The resin composition may further contain (d) a phenoxy resin, (e) a curing agent, (f) a curing accelerator, and (g) a flame retardant as needed. Hereinafter, each component contained in a resin composition is demonstrated in detail.

<(a) (i) a butadiene structural unit which may be hydrogenated, and (ii) a compound having at least one structural unit selected from the group consisting of a biphenyl-type phenol structural unit and a naphthol aralkyl structural unit>

The resin composition comprises (a) (i) a butadiene structural unit which may be hydrogenated, and (ii) a compound having at least one structural unit selected from the group consisting of a biphenylene-type phenol structural unit and a naphthol aralkyl structural unit. contains (a) By containing a component, it becomes excellent in film film forming property. (a) component is a copolymer comprising (i) a structural unit and (ii) a structural unit, (i) a structural unit and (ii) a block copolymer comprising a structural unit, (i) a structural unit and (ii) ) may be a random copolymer containing a structural unit, a graft copolymer containing (i) structural units and (ii) structural units, etc. It is preferable to have units. Here, the structural unit means a structure in which one or two hydrogen atoms have been removed from the compound.

(a) The number average molecular weight (Mn) of the component is preferably from 1000 to 20000, more preferably from 2000 to 15000, still more preferably from 2500 to 10000 from the viewpoint of improving compatibility with other components and physical properties of the cured product. . A number average molecular weight (Mn) is a polystyrene conversion number average molecular weight measured using GPC (gel permeation chromatography).

As (a) component, it is preferable to have a functional group which can react with (b) component mentioned later. In addition, as a functional group which can react with (b) component, the functional group shown by heating shall be included.

In one suitable embodiment, the functional group capable of reacting with the component (b) is at least one functional group selected from the group consisting of a carboxy group, an acid anhydride group, an isocyanate group and a urethane group. Among these, as the said functional group, an acid anhydride group and an isocyanate group are preferable.

The content ratio of (i) structural unit and (ii) structural unit ((i) structural unit/(ii) structural unit) contained in (a) component is from the viewpoint of enhancing compatibility with other components and physical properties of the cured product, Preferably it is 0.2-10, More preferably, it is 0.4-8, More preferably, it is 0.8-5.

(i) The butadiene structural unit is a structural unit derived from a 1,3-butadiene monomer, and a part or all of the butadiene structural unit may be hydrogenated. Moreover, the butadiene structural unit may have a substituent.

As the butadiene structural unit, for example, a structural unit containing a hydrogenated polybutadiene skeleton, a butadiene structural unit containing a hydroxyl group, a butadiene structural unit containing a carboxy group, a butadiene structural unit containing an acid anhydride group, and an epoxy group-containing butadiene A structural unit, a butadiene structural unit containing an isocyanate group, and a butadiene structural unit containing a urethane group are mentioned, The butadiene structural unit containing a hydroxyl group is preferable.

The component (ii) is at least one structural unit selected from the group consisting of a biphenylene-type phenol structural unit and a naphthol aralkyl structural unit. (ii) As a component, it is preferable to use independently a biphenylene type phenol structural unit or a naphthol aralkyl structural unit.

The biphenylene type phenol structural unit is a structural unit having a biphenylene group and a phenol group, and the biphenylene group and the phenol group may be directly bonded or may be bonded via a divalent coupling group such as a methylene group. The phenol group is a divalent group derived from hydroxybenzene, and hydroxybenzene is a concept including phenol, catechol, and hydroquinone.

A specific structure of the biphenylene-type phenol structural unit is a structural unit represented by the following general formula (1).

[Formula 1]

In Formula 1,

m1 and n2 are each independently 0 or 1,

p1 is 1 or 2.

It is preferable that m1 and n1 each independently represent 0 or 1, respectively, and represent 1. p1 represents 1 or 2, and it is preferable to represent 1.

The naphthol aralkyl structural unit is a structural unit having a naphthol group and an aralkylene group, and the naphthol group may be bonded to an alkylene moiety of an aralkylene group, may be bonded to an arylene moiety of an aralkylene group, or methylene You may couple|bond through divalent groups, such as group. As an aralkylene group, a benzylene group etc. are mentioned. The naphthol group is a divalent group derived from hydroxynaphthalene, and hydroxynaphthalene is a concept containing naphthol and dihydroxynaphthalene.

A specific structure of the naphthol aralkyl structural unit is a structural unit represented by the following formula (2).

[Formula 2]

In Formula 2,

m2 and n2 are each independently 0 or 1,

p2 is 1 or 2.

It is preferable that m2 and n2 each independently represent 0 or 1, respectively, and represent 1. p2 represents 1 or 2, and it is preferable to represent 1. "(OH) _p2 " in formula (2) may couple|bond with any site|part of the naphthalene condensed ring.

(a) The component may have other structural units other than (i) structural unit and (ii) structural unit. Although it does not restrict|limit especially as another structural unit, It is preferable that it is a structural unit derived from arbitrary monomers copolymerizable with (i) structural unit and (ii) structural unit. Examples of such a monomer include diallylamine, dimethylallylamine, methoxycarbonylated allylamine, methylcarbonylated allylamine, ureaized allylamine, isophoronedicyanate, and tetrabasic acid anhydride. have.

The method for synthesizing the component (a) is not particularly limited and may be performed by a known synthesis method. As a suitable embodiment, (a) component is obtained by making the butadiene resin used as a raw material of (i) a structural unit, and a diisocyanate compound react, and then reacting the remaining isocyanate group with the raw material of (ii) structural unit.

(i) As the butadiene resin used as a raw material of the structural unit, a butadiene resin having a liquid phase or glass transition temperature of 25° C. or less at 25° C. is preferable, and a hydrogenated polybutadiene skeleton-containing resin (for example, a hydrogenated polybutadiene skeleton-containing epoxy resin); At least one resin selected from the group consisting of a hydroxyl group-containing butadiene resin, a carboxyl group-containing butadiene resin, an acid anhydride group-containing butadiene resin, an epoxy group-containing butadiene resin, an isocyanate group-containing butadiene resin and a urethane group-containing butadiene resin is more preferable. The butadiene structure in the butadiene resin may be contained in the main chain or may be contained in the side chain. A part or all of the butadiene structure may be hydrogenated. Here, "hydrogenated polybutadiene skeleton-containing resin" refers to a resin in which at least a part of the polybutadiene skeleton is hydrogenated, and does not necessarily have to be a resin in which the polybutadiene skeleton is completely hydrogenated.

The number average molecular weight (Mn) of the butadiene resin is preferably 1,000 to 100,000, more preferably 5,000 to 50,000, still more preferably 7,500 to 30,000, still more preferably 10,000 to 15,000. Here, the number average molecular weight (Mn) of resin is a polystyrene conversion number average molecular weight measured using GPC (gel permeation chromatography).

When the butadiene resin has a functional group, the functional group equivalent is preferably 100 to 10000, more preferably 200 to 5000. In addition, a functional group equivalent is the number of grams of resin containing 1 gram equivalent of a functional group. For example, an epoxy group equivalent can be measured according to JISK7236. The hydroxyl equivalent can be calculated by dividing the molecular weight of KOH by the hydroxyl value measured according to JIS K1557-1.

As a specific example of the butadiene resin, "Ricon 657" (polybutadiene containing an epoxy group) manufactured by Cray Valley, "Ricon 130MA8", "Ricon 130MA13", "Ricon 130MA20", "Ricon 131MA5", "Ricon 131MA10", "Ricon 131MA17" , "Ricon 131MA20", "Ricon 184MA6" (polybutadiene containing acid anhydride groups), "JP-100", "JP-200" (epoxidized polybutadiene) manufactured by Nippon Soda, "GQ-1000" (hydroxyl group, Carboxyl-introduced polybutadiene), “G-1000”, “G-2000”, “G-3000” (polybutadiene with hydroxyl groups at both ends), “GI-1000”, “GI-2000”, “GI-3000” (amount) Polybutadiene hydrogenated with a terminal hydroxyl group), Daicel Co., Ltd. "PB3600", "PB4700" (polybutadiene skeleton epoxy resin), "EpoFriend A1005", "EpoFriend A1010", "EpoFriend A1020" (styrene, butadiene and styrene block) epoxidized copolymer), "FCA-061L" (hydrogenated polybutadiene skeleton epoxy resin) manufactured by Nagase Chemtex, "R-45EPT" (polybutadiene skeleton epoxy resin), etc. are mentioned.

(ii) As the biphenylene-type phenol resin used as the raw material of the structural unit, MEH-7851 series such as "MEH-7851SS" and "MEH-7851M" manufactured by Meiwa Chemicals, KAYAHARD GPH series manufactured by Nihon Kayaku, etc. can be heard

(ii) As a naphthol aralkyl resin used as a raw material of a structural unit, "SN-475", "SN-485", "SN-495V", etc. manufactured by Nippon-Steel Chemicals are mentioned.

The number average molecular weight (Mn) of the biphenylene type phenol resin and the naphthol aralkyl resin is preferably 360 to 10000, more preferably 380 to 5000, still more preferably 400 to 3000. Here, the number average molecular weight (Mn) of resin is a polystyrene conversion number average molecular weight measured using GPC (gel permeation chromatography).

The hydroxyl equivalent of a biphenylene type phenol resin and a naphthol aralkyl resin becomes like this. Preferably it is 100-1000, More preferably, it is 200-500. The hydroxyl equivalent can be calculated by dividing the molecular weight of KOH by the hydroxyl value measured according to JIS K1557-1.

When content of (a) component in a resin composition makes the non-volatile component of a resin composition 100 mass % from a viewpoint of improving reflow resistance, Preferably it is 40 mass % or less, More preferably, it is 35 mass % or less. , More preferably, it is 30 mass % or less, More preferably, it is 25 mass % or less. The lower limit is preferably 3% by mass or more, more preferably 5% by mass or more, still more preferably 10% by mass or more, still more preferably 15% by mass or more.

<(b) Epoxy resin having two or more epoxy groups and one or more aromatic rings in one molecule>

The resin composition contains (b) an epoxy resin having two or more epoxy groups and one or more aromatic rings in one molecule. An aromatic ring is a concept including polycyclic aromatic and aromatic heterocyclic ring. By containing (b) component in a resin composition, the compatibility of (a) component improves, As a result, the resin composition excellent in the peeling strength of a conductor layer, and reflow tolerance is obtained.

(b) component has two or more epoxy groups and one or more aromatic rings in one molecule, an epoxy resin that is liquid at a temperature of 20 ° C., and three or more epoxy groups and one or more aromatic rings in one molecule, and at a temperature of 20 ° C. It is preferable that it is any one of solid-state epoxy resins. Among these, it is preferable that it is a solid epoxy resin from a viewpoint of improving the surface adhesiveness of the resin composition layer of the resin sheet formed (a light-adhesive thing is preferable in the lamination|stacking process mentioned later) and heat resistance.

(b) As a specific example of a component, Epoxy resin which has 2 or more epoxy groups, 1 or more aromatic rings, and a fluorine atom in 1 molecule, such as a bisphenol AF type|mold epoxy resin; bisphenol F-type epoxy resin; an epoxy resin having two or more epoxy groups and one or more biphenyl structures in one molecule; an epoxy resin having two or more epoxy groups and one or more condensed rings in one molecule; an epoxy resin having two or more epoxy groups and one or more xylene structures in one molecule; an epoxy resin having one or more glycidylamino groups, one or more epoxy groups, and one or more aromatic rings in one molecule; an epoxy resin having two or more epoxy groups, one or more aromatic rings, and a dicyclopentadienyl structure in one molecule; and at least one selected from the group consisting of an epoxy resin having two or more glycidyloxybenzene structures in one molecule, and an epoxy resin having two or more epoxy groups, one or more aromatic rings and fluorine atoms in one molecule; an epoxy resin having two or more epoxy groups and one or more biphenyl structures in one molecule; an epoxy resin having two or more epoxy groups and one or more condensed rings in one molecule; an epoxy resin having two or more epoxy groups and one or more xylene structures in one molecule; and at least one selected from the group consisting of an epoxy resin having two or more epoxy groups, one or more aromatic rings and a dicyclopentadienyl structure in one molecule, and two or more epoxy groups, one or more aromatic rings, and an epoxy resin having a fluorine atom; and at least one selected from the group consisting of an epoxy resin having two or more epoxy groups and one or more biphenyl structures in one molecule.

(b) As a specific example of a component, "HP4032", "HP4032D", "HP4032SS", "HP4032H" (naphthalene type epoxy resin) manufactured by DIC, "828US", "jER828EL" manufactured by Mitsubishi Chemical Corporation (bisphenol A) type epoxy resin), “jER806”, “jER807” (bisphenol F type epoxy resin), “jER152” (phenol novolak type epoxy resin), “630”, “630LSD” (glycidylamine type epoxy resin), cinnamon "ZX1059" (mixed product of bisphenol A type epoxy resin and bisphenol F type epoxy resin) manufactured by Tetsu Sumi-King Chemical, "EX-721" manufactured by Nagase Chemtex (glycidyl ester type epoxy resin), Daicel "Ceroxide 2021P" (alicyclic epoxy resin having an ester skeleton), "ZX1658", "ZX1658GS" (liquid 1,4-glycidylcyclohexane), "HP-4700" manufactured by Nippon Chemicals Co., Ltd. ', "HP-4710" (naphthalene tetrafunctional epoxy resin), "N-690" (cresol novolak epoxy resin), "N-695" (cresol novolak epoxy resin), "HP-7200", “HP-7200L”, “HP-7200HH”, “HP-7200H”, “HP-7200HHH” (dicyclopentadiene type epoxy resin), “EXA7311”, “EXA7311-G3”, “EXA7311-G4”, “ EXA7311-G4S", "HP6000" (naphthylene ether type epoxy resin), "EPPN-502H" (trisphenol type epoxy resin) manufactured by Nippon Kayaku, "NC7000L" (naphthol novolak type epoxy resin), "NC3000H" , "NC3000", "NC3000L", "NC3100" (biphenyl type epoxy resin), "ESN475V" (naphthol type epoxy resin), "ESN485" (naphthol novolak type epoxy resin) manufactured by Shin-Nittetsu Chemical Co., Ltd. "YX4000H", "YL6121" (biphenyl type epoxy resin), "YX4000HK" (bixylenol type epoxy resin), "YL7760" (bisphenol AF type epoxy resin), "YX8800" (anthracene type epoxy resin) manufactured by Mitsubishi Chemical resin), "PG-100", "CG-500" manufactured by Osaka Gas Chemicals, Mitsubishi Chemical "YL7800" (fluorene type epoxy resin) manufactured by Mitsubishi Chemical Corporation "jER1010" (solid bisphenol A type epoxy resin), "jER1031S" (tetraphenylethane type epoxy resin), "157S70" (bisphenol novolac) type epoxy resin), “YX4000HK” (bixylenol type epoxy resin), “YX8800” (anthracene type epoxy resin) manufactured by Mitsubishi Chemical, “PG-100”, “CG-500” manufactured by Osaka Chemical Company, “YL7800” (fluorene type epoxy resin) manufactured by Mitsubishi Chemical, “jER1031S” (tetraphenylethane type epoxy resin) manufactured by Mitsubishi Chemical, “YX7700” manufactured by Mitsubishi Chemical (xylene structure-containing epoxy resin) ) and the like. These may be used individually by 1 type, and may be used in combination of 2 or more type.

(b) content of component, from a viewpoint of improving reflow resistance, when the non-volatile component in a resin composition is 100 mass %, Preferably it is 2 mass % or more, More preferably, it is 3 mass % or more, More preferably Preferably, it is 5 mass % or more. Although an upper limit is not specifically limited as long as the effect of this invention is shown, Preferably it is 30 mass % or less, More preferably, it is 25 mass % or less, More preferably, it is 20 mass % or less.

(b) The epoxy equivalent of component becomes like this. Preferably it is 200 or more, More preferably, it is 300 or more, More preferably, it is 400 or more. Although an upper limit is not specifically limited, Preferably it is 3000 or less, More preferably, it is 2000 or less, More preferably, it is 1000 or less. By being in this range, the crosslinking density of hardened|cured material becomes sufficient and it can lead to the insulating layer with small surface roughness. In addition, an epoxy equivalent can be measured according to JISK7236, and is the mass of resin containing 1 equivalent of an epoxy group.

(b) The weight average molecular weight of component becomes like this. Preferably it is 100-5000, More preferably, it is 250-3000, More preferably, it is 400-1500. Here, the weight average molecular weight of the component (b) is a weight average molecular weight in terms of polystyrene measured by a gel permeation chromatography (GPC) method, and can be measured in the same manner as the weight average molecular weight of the component (d) described later. .

The compatibility with respect to the resin composition of (a) component improves the resin composition of this invention by containing (b) component. For this reason, the resin composition of this invention shows the characteristic that it is excellent in film film forming property. Evaluation of film formability can be measured according to the method as described in <Evaluation of film formability of a film> mentioned later.

<(c) Inorganic filler>

The resin composition contains (c) an inorganic filler. Although the material of the inorganic filler is not particularly limited, for example, silica, alumina, glass, cordierite, silicon oxide, barium sulfate, barium carbonate, talc, clay, mica powder, zinc oxide, hydrotalcite, boehmite, Aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, magnesium oxide, boron nitride, aluminum nitride, manganese nitride, aluminum borate, strontium carbonate, strontium titanate, calcium titanate, magnesium titanate, bismuth titanate, titanium oxide, zirconium oxide, barium titanate , barium titanate zirconate, barium zirconate, calcium zirconate, zirconium phosphate, zirconium tungstate phosphate, and the like. Among these, silica is particularly suitable. Moreover, as a silica, spherical silica is preferable. An inorganic filler may be used individually by 1 type, and may be used in combination of 2 or more type.

The average particle diameter of the inorganic filler is preferably 5 µm or less, more preferably 2.5 µm or less, still more preferably 2.2 µm or less, from the viewpoint of improving circuit embedding properties and obtaining an insulating layer with low surface roughness. Preferably it is 2 micrometers or less. Although the lower limit of the said average particle diameter is not specifically limited, Preferably it is 0.01 micrometer or more, More preferably, it is 0.05 micrometer or more, More preferably, it is 0.1 micrometer or more. Commercially available inorganic fillers having such an average particle diameter include, for example, "YC100C", "YA050C", "YA050C-MJE", "YA010C" manufactured by Adomatex Corporation, "UFP-30" manufactured by Denki Chemical Co., Ltd. , manufactured by Tokuyama Corporation "Silpil NSS-3N", "Silpil NSS-4N", "Silpil NSS-5N", manufactured by Adomatex "SC2500SQ", "SO-C6", "SO-C4", "SO- C2", "SO-C1", etc. are mentioned.

The average particle diameter of the inorganic filler can be measured by a laser diffraction/scattering method based on the Mie scattering theory. Specifically, it can measure by creating the particle size distribution of an inorganic filler on a volume basis with a laser diffraction scattering type particle size distribution analyzer, and making the median diameter into an average particle diameter. As a measurement sample, what disperse|distributed the inorganic filler in water by ultrasonic wave can be used preferably. As a laser diffraction scattering type particle size distribution analyzer, "LA-500" manufactured by Horiba Corporation, etc. can be used.

From the viewpoint of improving moisture resistance and dispersibility, the inorganic filler is an aminosilane-based coupling agent, an epoxysilane-based coupling agent, a mercaptosilane-based coupling agent, a silane-based coupling agent, an alkoxysilane compound, an organosilazane compound, and a titanate-based coupler. It is preferable that it is processed with 1 or more types of surface treatment agents, such as a ring agent. As a commercial item of a surface treatment agent, For example, Shin-Etsu Chemical Co., Ltd. "KBM403" (3-glycidoxypropyl trimethoxysilane), Shin-Etsu Chemical Co., Ltd. product "KBM803" (3-mercaptopropyltrimethoxy) silane), Shin-Etsu Chemical Co., Ltd. "KBE903" (3-aminopropyltriethoxysilane), Shin-Etsu Chemical Co., Ltd. "KBM573" (N-phenyl-3-aminopropyltrimethoxysilane), Shin-Etsu Chemical “SZ-31” (hexamethyldisilazane) manufactured by Kogyo Corporation, “KBM103” (phenyltrimethoxysilane) manufactured by Shin-Etsu Chemical, “KBM-4803” manufactured by Shin-Etsu Chemical Co., Ltd. (long-chain epoxy type silane couple) ring agent) and the like.

The grade of the surface treatment by a surface treating agent can be evaluated by the amount of carbon per unit surface area of an inorganic filler. From the viewpoint of improving the dispersibility of the inorganic filler, the amount of carbon per unit surface area of the inorganic filler is preferably 0.02 mg/m 2 or more, more preferably 0.1 mg/m 2 or more, and still more preferably 0.2 mg/m 2 or more. On the other hand, from the viewpoint of preventing an increase in melt viscosity of the resin varnish or melt viscosity in sheet form, 1 mg/m2 or less is preferable, 0.8 mg/m2 or less is more preferable, and 0.5 mg/m2 or less is still more preferable. .

The amount of carbon per unit surface area of an inorganic filler can be measured, after washing-processing the inorganic filler after surface treatment with a solvent (for example, methyl ethyl ketone (MEK)). Specifically, a sufficient amount of MEK as a solvent is added to the inorganic filler surface-treated with a surface treatment agent, followed by ultrasonic cleaning at 25° C. for 5 minutes. After removing the supernatant and drying the solid content, the amount of carbon per unit surface area of the inorganic filler can be measured using a carbon analyzer. As a carbon analyzer, "EMIA-320V" manufactured by Horiba Corporation, etc. can be used.

Content of the inorganic filler in a resin composition is 30 mass % or more, Preferably it is 35 mass % or more, More preferably, it is 40 mass % or more from a viewpoint of obtaining an insulating layer excellent in reflow resistance and a low coefficient of thermal expansion. The upper limit is preferably 95 mass % or less, more preferably 90 mass % or less, still more preferably 85 mass % or less, even more preferably 80 mass % or less, from the viewpoint of mechanical strength of the insulating layer, particularly elongation. to be.

<(d) phenoxy resin>

The resin composition of this invention can contain (d) a phenoxy resin.

The range of 8,000-70,000 is preferable, as for the weight average molecular weight of polystyrene conversion of (d) component, the range of 10,000-60,000 is more preferable, The range of 20,000-60,000 is still more preferable. (d) The weight average molecular weight of polystyrene conversion of a component is measured by the gel permeation chromatography (GPC) method. Specifically, the weight average molecular weight in terms of polystyrene of component (d) is LC-9A/RII-6A manufactured by Shimadzu Corporation as a measuring device and Shodex K-800P/K-804L/ manufactured by Showa Denko as a column. For K-804L, using chloroform or the like as a mobile phase, the column temperature is measured at 40°C, and can be calculated using a standard polystyrene calibration curve.

Examples of the phenoxy resin include bisphenol AF structure, bisphenol A structure, bisphenol F structure, bisphenol S structure, bisphenolacetphenone structure, novolak structure, biphenyl structure, fluorene structure, dicyclopentadiene structure, norbor phenoxy resins having at least one structure selected from the group consisting of a nene structure, a naphthalene structure, an anthracene structure, an adamantane structure, a terpene structure, and a trimethylcyclohexane structure, a bixylenol structure, and a bisphenolfluorene structure. It is preferably a phenoxy resin having at least one structure selected from the group consisting of a bisphenol AF structure, a bixylenol structure, and a bisphenol fluorene structure, and more preferably a phenoxy resin including a bisphenol AF structure. do. Any functional group, such as a phenolic hydroxyl group and an epoxy group, may be sufficient as the terminal of a phenoxy resin. A phenoxy resin may be used individually by 1 type, and may be used in combination of 2 or more type.

Specific examples of the phenoxy resin include "1256" and "4250" manufactured by Mitsubishi Chemical (both phenoxy resins containing a bisphenol A structure), "YX8100" (phenoxy resin containing a bisphenol S skeleton), and "YX6954" (bisphenol acetphenone skeleton-containing phenoxy resin), in addition to "FX280" and "FX293" manufactured by Shin-Nittetsu Chemical Co., Ltd., "YX6954BH30", "YX7553BH30", "YL7769BH30" manufactured by Mitsubishi Chemical, "YL7769BH30", "YL6794", "YL7213", "YL7290", "YL7891BH30", "YL7482", etc. are mentioned.

When the resin composition contains the component (d), the content of the component (d) makes the nonvolatile component of the resin composition 100% by mass, preferably 1% by mass to 20% by mass, more preferably 3 It is mass % - 18 mass %, More preferably, it is 5 mass % - 15 mass %.

<(e) curing agent>

The resin composition may contain (e) a curing agent. The curing agent is not particularly limited as long as it has a function of curing the resin such as component (b), and for example, a phenol-based curing agent, a naphthol-based curing agent, an active ester-based curing agent, a benzoxazine-based curing agent, a cyanate ester-based curing agent, and carbodiimide-based curing agents. A hardening|curing agent may be used individually by 1 type, or may use 2 or more types together. (e) component is preferably at least one selected from a phenol-based curing agent, a naphthol-based curing agent, an active ester-based curing agent and a cyanate ester-based curing agent, and at least one selected from a phenol-based curing agent and an active ester-based curing agent more preferably.

As the phenolic curing agent and the naphthol curing agent, from the viewpoint of heat resistance and water resistance, a phenolic curing agent having a novolak structure or a naphthol curing agent having a novolak structure is preferable. Moreover, from a viewpoint of adhesiveness with a conductor layer, a nitrogen-containing phenolic hardening|curing agent is preferable, and a triazine skeleton containing phenolic hardening|curing agent is more preferable. Among them, a triazine skeleton-containing phenol novolac curing agent is preferable from the viewpoint of highly satisfying heat resistance, water resistance, and adhesion to the conductor layer.

Specific examples of the phenol-based curing agent and the naphthol-based curing agent include “MEH-7700”, “MEH-7810”, “MEH-7851” manufactured by Meiwa Kasei Corporation, “NHN”, “CBN”, and “GPH” manufactured by Nippon Kayaku. ”, “SN-170”, “SN-180”, “SN-190”, “SN-475”, “SN-485”, “SN-495V”, “SN-375” manufactured by New Nippon Chemicals Co., Ltd. ”, “SN-395”, “TD-2090”, “LA-7052”, “LA-7054”, “LA-1356”, “LA-3018-50P”, “EXB-9500” manufactured by DIC, "HPC-9500", "KA-1160", "KA-1163", "KA-1165", "GDP-6115L", "GDP-6115H" manufactured by Gunei Chemical Co., Ltd., etc. are mentioned.

From a viewpoint of obtaining the insulating layer excellent in adhesiveness with a conductor layer, an active ester type hardening|curing agent is also preferable. Although there is no restriction|limiting in particular as an active ester type hardening|curing agent, Generally, ester groups with high reaction activity, such as phenol esters, thiophenol esters, N-hydroxyamine esters, and heterocyclic hydroxy compound esters, are 2 in 1 molecule. Compounds having at least one compound are preferably used. It is preferable that the said active ester type hardening|curing agent is obtained by the condensation reaction of a carboxylic acid compound and/or a thiocarboxylic acid compound, and a hydroxy compound and/or a thiol compound. In particular, from the viewpoint of improving heat resistance, an active ester curing agent obtained from a carboxylic acid compound and a hydroxy compound is preferable, and an active ester curing agent obtained from a carboxylic acid compound, a hydroxy compound and/or a naphthol compound is more preferable. Examples of the carboxylic acid compound include benzoic acid, acetic acid, succinic acid, maleic acid, itaconic acid, phthalic acid, isophthalic acid, terephthalic acid, and pyromellitic acid. Examples of the phenol compound or naphthol compound include hydroquinone, resorcin, bisphenol A, bisphenol F, bisphenol S, phenolphthaline, methylated bisphenol A, methylated bisphenol F, methylated bisphenol S, phenol, o-cresol, m- Cresol, p-cresol, catechol, α-naphthol, β-naphthol, 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 2,6-dihydroxynaphthalene, dihydroxybenzophenone, trihydroxybenzophenone, tetrahydroxybenzophenone, phloroglucin, benzenetriol, dicyclopentadiene type diphenol compound, phenol novolac, etc. are mentioned. Here, the "dicyclopentadiene-type diphenol compound" refers to a diphenol compound obtained by condensing two molecules of phenol to one molecule of dicyclopentadiene.

Specifically, an active ester compound containing a dicyclopentadiene-type diphenol structure, an active ester compound containing a naphthalene structure, an active ester compound containing an acetylated product of phenol novolac, An active ester compound is preferable, and among these, the active ester compound containing a naphthalene structure, and the active ester compound containing a dicyclopentadiene type diphenol structure are more preferable. The "dicyclopentadiene type diphenol structure" represents a divalent structural unit composed of phenylene-dicyclopentylene-phenylene.

Commercially available active ester curing agents are active ester compounds containing a dicyclopentadiene-type diphenol structure, such as "EXB9451", "EXB9460", "EXB9460S", "HPC-8000-65T", "HPC-8000H-65TM" ', "EXB-8000L-65TM" (manufactured by DIC), "EXB9416-70BK" (manufactured by DIC) as an active ester compound containing a naphthalene structure, and "DC808" as an active ester compound containing an acetylenide of phenol novolac ” (manufactured by Mitsubishi Chemical), “YLH1026” (manufactured by Mitsubishi Chemical) as an active ester compound containing a benzoyl product of phenol novolac, and “DC808” (Mitsubishi) as an active ester curing agent that is an acetylated product of phenol novolac As an active ester curing agent, which is a benzoyl product of phenol novolac, "YLH1026" (manufactured by Mitsubishi Chemical), "YLH1030" (manufactured by Mitsubishi Chemical), "YLH1048" (manufactured by Mitsubishi Chemical) and the like.

As a specific example of a benzoxazine type hardening|curing agent, "HFB2006M" by Showa Kogyo Co., Ltd. and "P-d" and "F-a" by Shikoku Chemical Co., Ltd. are mentioned.

Examples of the cyanate ester curing agent include bisphenol A dicyanate, polyphenol cyanate, oligo(3-methylene-1,5-phenylene cyanate), 4,4'-methylenebis(2,6- Dimethylphenyl cyanate), 4,4'-ethylidenediphenyldicyanate, hexafluorobisphenol A dicyanate, 2,2-bis(4-cyanate)phenylpropane, 1,1-bis(4- cyanatephenylmethane), bis(4-cyanate-3,5-dimethylphenyl)methane, 1,3-bis(4-cyanatephenyl-1-(methylethylidene))benzene, bis(4-cya Difunctional cyanate resins such as natephenyl)thioether and bis(4-cyanatephenyl)ether, polyfunctional cyanate resins derived from phenol novolac and cresol novolac, etc., these cyanate resins are partially triazined A prepolymer etc. are mentioned. As a specific example of a cyanate ester type hardening|curing agent, "PT30" and "PT60" (all are phenol novolak-type polyfunctional cyanate ester resin), "BA230", "BA230S75" (part of bisphenol A dicyanate by Ronjapan Co., Ltd.) or a prepolymer in which all of them were triazined and trimer) and the like.

Specific examples of the carbodiimide-based curing agent include "V-03" and "V-07" manufactured by Nisseibo Chemicals.

When the resin composition contains the component (e), the content of the curing agent in the resin composition is not particularly limited, but when the nonvolatile component of the resin composition is 100% by mass, preferably 10% by mass or less, more preferably It is 8 mass % or less, More preferably, it is 5 mass % or less. Moreover, although there is no restriction|limiting in particular as for a minimum, 1 mass % or more is preferable.

<(f) curing accelerator>

The resin composition may contain (f) a hardening accelerator. Examples of the curing accelerator include a phosphorus curing accelerator, an amine curing accelerator, an imidazole curing accelerator, a guanidine curing accelerator, and a metal curing accelerator, and a phosphorus curing accelerator, an amine curing accelerator, and imidazole curing accelerator. Accelerators and metal-based curing accelerators are preferable, and amine-based curing accelerators, imidazole-based curing accelerators and metal-based curing accelerators are more preferable. A hardening accelerator may be used individually by 1 type, and may be used in combination of 2 or more type.

Examples of the phosphorus curing accelerator include triphenylphosphine, phosphonium phosphate compound, tetraphenylphosphonium tetraphenylborate, n-butylphosphonium tetraphenylborate, tetrabutylphosphoniumdecanoate, (4-methylphenyl)tri Phenyl phosphonium thiocyanate, tetraphenyl phosphonium thiocyanate, butyl triphenyl phosphonium thiocyanate, etc. are mentioned, Triphenyl phosphine and tetrabutyl phosphonium decanoate are preferable.

Examples of the amine curing accelerator include trialkylamines such as triethylamine and tributylamine, 4-dimethylaminopyridine, benzyldimethylamine, 2,4,6-tris(dimethylaminomethyl)phenol, 1,8 -diazabicyclo(5,4,0)-undecene etc. are mentioned, 4-dimethylamino pyridine and 1,8- diazabicyclo(5,4,0)- undecene are preferable.

Examples of the imidazole-based curing accelerator include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, and 2-ethyl-4-methyl. Imidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methyl Midazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-ethyl -4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazolium trimeritate, 1-cyanoethyl-2-phenylimidazolium Trimeritate, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-undecyl Imidazolyl-(1′)]-ethyl-s-triazine, 2,4-diamino-6-[2′-ethyl-4′-methylimidazolyl-(1′)]-ethyl-s- triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazineisocyanuric acid adduct, 2-phenylimidazoleisocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,3-dihydro-1H-pyrrolo[1,2-a ]Imidazole compounds such as benzimidazole, 1-dodecyl-2-methyl-3-benzylimidazolium chloride, 2-methylimidazoline and 2-phenylimidazoline, and adducts of imidazole compounds and epoxy resins sieves, and 2-ethyl-4-methylimidazole and 1-benzyl-2-phenylimidazole are preferable.

As an imidazole-type hardening accelerator, you may use a commercial item, for example, "P200-H50" by Mitsubishi Chemical Co., Ltd. etc. is mentioned.

Examples of the guanidine-based curing accelerator include dicyandiamide, 1-methylguanidine, 1-ethylguanidine, 1-cyclohexylguanidine, 1-phenylguanidine, 1-(o-tolyl)guanidine, dimethylguanidine, diphenylguanidine. , trimethylguanidine, tetramethylguanidine, pentamethylguanidine, 1,5,7-triazabicyclo[4.4.0]deca-5-ene, 7-methyl-1,5,7-triazabicyclo[4.4.0] Deca-5-ene, 1-methylbiguanide, 1-ethylbiguanide, 1-n-butylbiguanide, 1-n-octadecylbiguanide, 1,1-dimethylbiguanide, 1, 1-diethylbiguanide, 1-cyclohexylbiguanide, 1-allylbiguanide, 1-phenylbiguanide, 1-(o-tolyl)biguanide, etc. are mentioned, dicyandiamide, 1,5,7-triazabicyclo[4.4.0]deca-5-ene is preferred.

Examples of the metal-based curing accelerator include organometallic complexes or organometallic salts of metals such as cobalt, copper, zinc, iron, nickel, manganese and tin. Specific examples of the organometallic complex include organocobalt complexes such as cobalt(II)acetylacetonate and cobalt(III)acetylacetonate, organocopper complexes such as copper(II)acetylacetonate, zinc(II)acetylacetonate, and the like. organic zinc complexes, organic iron complexes such as iron (III) acetylacetonate, organic nickel complexes such as nickel (II) acetylacetonate, and organic manganese complexes such as manganese (II) acetylacetonate. Examples of the organic metal salt include zinc octylate, tin octylate, zinc naphthenate, cobalt naphthenate, tin stearate, and zinc stearate.

When the resin composition contains the component (f), the content of the curing accelerator in the resin composition is not particularly limited, but when the nonvolatile component of the resin composition is 100% by mass, 0.01% by mass to 3% by mass is preferable, 0.03 mass % - 2 mass % are more preferable, and 0.05 mass % - 1 mass % are still more preferable.

<(g) Flame Retardant>

The resin composition may contain (g) a flame retardant. Examples of the flame retardant include an organic phosphorus flame retardant, an organic nitrogen-containing phosphorus compound, a nitrogen compound, a silicone flame retardant, and a metal hydroxide. A flame retardant may be used individually by 1 type, or may use 2 or more types together.

As a flame retardant, you may use a commercial item, for example, "HCA-HQ" by Sanko Corporation, "PX-200" by Daihachi Chemical Industry Co., Ltd., etc. are mentioned.

When the resin composition contains a flame retardant, the content of the flame retardant is not particularly limited, but when the nonvolatile component of the resin composition is 100% by mass, preferably 1% by mass to 20% by mass, more preferably 1.5% by mass -15 mass %, More preferably, 2 mass % - 10 mass % are still more preferable.

<(h) optional additives>

The resin composition may further contain other additives as needed. Examples of such other additives include organometallic compounds such as an organocopper compound, an organozinc compound, and an organocobalt compound, and a binder, a thickener, and an antifoaming agent. , a leveling agent, an adhesive imparting agent, and a resin additive such as a colorant.

The resin composition of this invention can bring about the insulating layer excellent in a flame retardance, peeling strength with copper foil, and reflow resistance at the time of manufacture of a printed wiring board and a semiconductor package. Therefore, the resin composition of the present invention is a resin composition for forming an insulating layer of a semiconductor chip package (resin composition for an insulating layer of a semiconductor chip package), a resin composition for forming an insulating layer of a circuit board (including a printed wiring board) ( A resin composition for forming an interlayer insulating layer on which a conductor layer is formed by plating, which can be suitably used as a resin composition for an insulating layer of a circuit board (resin for an interlayer insulating layer of a circuit board on which a conductor layer is formed by plating) composition) can be more suitably used.

Moreover, it can use suitably also as a resin composition for sealing a semiconductor chip (resin composition for semiconductor chip sealing), and a resin composition for forming wiring in a semiconductor chip (resin composition for semiconductor chip wiring formation).

[Resin Sheet]

The resin sheet of this invention consists of a support body and the resin composition layer joined with the said support body, and a resin composition layer consists of the resin composition of this invention.

The thickness of the resin composition layer is preferably 100 µm or less, more preferably 80 µm or less, still more preferably 60 µm or less, and particularly preferably 50 µm or less from the viewpoint of reducing the thickness. Although the lower limit of the thickness of a resin composition layer is not specifically limited, Usually, 1 micrometer or more, 5 micrometers or more, 10 micrometers or more, etc. can be made.

As a support body, the film which consists of a plastic material, metal foil, and a release paper are mentioned, for example, The film which consists of a plastic material, and metal foil are preferable.

When a film made of a plastic material is used as the support, the plastic material is, for example, polyethylene terephthalate (hereinafter, may be abbreviated as "PET"), polyethylene naphthalate (hereinafter may be abbreviated as "PEN" in some cases). Polyester, such as polycarbonate (hereinafter sometimes abbreviated as "PC"), acrylic such as polymethyl methacrylate (PMMA), cyclic polyolefin, triacetyl cellulose (TAC), polyether sulfide (PES) , polyether ketone, polyimide, and the like. Among these, polyethylene terephthalate and polyethylene naphthalate are preferable, and inexpensive polyethylene terephthalate is particularly preferable.

When using metal foil as a support body, as metal foil, copper foil, aluminum foil, etc. are mentioned, for example, Copper foil is preferable. As the copper foil, a foil made of a single metal of copper may be used, or a foil made of an alloy of copper and another metal (eg, tin, chromium, silver, magnesium, nickel, zirconium, silicon, titanium, etc.) is used. also good

The support may apply a mat treatment and a corona treatment to the surface to be joined with the resin composition layer.

Moreover, as a support body, you may use the support body with a mold release layer which has a mold release layer on the surface to join with the resin composition layer. As a mold release agent used for the mold release layer of a support body with a mold release layer, 1 or more types of mold release agents are mentioned from the group which consists of an alkyd resin, a polyolefin resin, a urethane resin, and a silicone resin, for example. The support with a release layer may use a commercial item, for example, "SK-1", "AL-5", "AL" manufactured by Lintech which is a PET film which has a release layer which has an alkyd resin type release agent as a main component. -7", "Lumira-T6AM" manufactured by Tore Corporation, and the like.

Although it does not specifically limit as thickness of a support body, The range of 5 micrometers - 75 micrometers is preferable, and the range of 10 micrometers - 60 micrometers is more preferable. Moreover, when using a support body with a mold release layer, it is preferable that the thickness of the whole support body with a mold release layer is the said range.

A resin sheet can be produced by, for example, preparing a resin varnish in which a resin composition is dissolved in an organic solvent, applying this resin varnish to a support using a die coater, etc., and drying again to form a resin composition layer. .

Examples of the organic solvent include ketones such as acetone, methyl ethyl ketone (MEK) and cyclohexanone; acetate esters such as ethyl acetate, butyl acetate, cellosolve acetate, propylene glycol monomethyl ether acetate and carbitol acetate; carbitols such as cellosolve and butylcarbitol; aromatic hydrocarbons such as toluene and xylene; and amide solvents such as dimethylformamide, dimethylacetamide (DMAc) and N-methylpyrrolidone. An organic solvent may be used individually by 1 type, and may be used in combination of 2 or more type.

What is necessary is just to perform drying by well-known methods, such as heating and hot-air spraying. Although drying conditions are not specifically limited, Content of the organic solvent in a resin composition layer is 10 mass % or less, Preferably it is made to dry so that it may become 5 mass % or less. Although it also changes depending on the boiling point of the organic solvent in the resin varnish, for example, when using a resin varnish containing 30 mass % to 60 mass % of an organic solvent, by drying at 50 ° C. to 150 ° C. for 3 minutes to 10 minutes, A resin composition layer can be formed.

In the resin sheet, a protective film conforming to the support can be further laminated on the surface of the resin composition layer that is not bonded to the support (that is, the surface on the opposite side to the support). Although the thickness of a protective film is not specifically limited, For example, they are 1 micrometer - 40 micrometers. By laminating|stacking a protective film, adhesion of dust, etc. to the surface of a resin composition layer, and a flaw can be prevented. A resin sheet can be wound and stored in roll shape. When a resin sheet has a protective film, it becomes usable by peeling a protective film.

Instead of the resin sheet of the present invention, a prepreg formed by impregnating a sheet-like fiber base material with the resin composition of the present invention may be used.

The sheet-like fiber base material used for the prepreg is not particularly limited, and those that are compatible with the prepreg base material, such as glass cloth, aramid nonwoven fabric, and liquid crystal polymer nonwoven fabric, can be used. From the viewpoint of reduction in thickness, the thickness of the sheet-like fiber base material is preferably 900 µm or less, more preferably 800 µm or less, still more preferably 700 µm or less, still more preferably 600 µm or less. Since especially this invention can suppress plating creep depth small, 30 micrometers or less are preferable, 20 micrometers or less are more preferable, and 10 micrometers or less are still more preferable. Although the lower limit of the thickness of a sheet-like fiber base material is not specifically limited, Usually, it can be 1 micrometer or more, 1.5 micrometers or more, 2 micrometers or more, etc.

A prepreg can be manufactured by well-known methods, such as a hot melt method and a solvent method.

The thickness of a prepreg can be made into the range similar to the resin composition layer in said resin sheet.

The minimum melt viscosity of the resin composition layer (or resin composition) in the resin sheet of the present invention is preferably 500 poise or more, more preferably 1000 poise or more, from the viewpoint of stably maintaining the thickness even if the resin composition layer is thin. , 1500 poise or more is more preferable. The upper limit of the minimum melt viscosity is preferably 10000 poise or less, more preferably 8000 poise or less, still more preferably 6500 poise or less, 5000 poise or less, or 4000 poise or less from the viewpoint of obtaining good part embedding properties.

The minimum melt viscosity of a resin composition layer means the minimum viscosity which a resin composition layer shows when resin of a resin composition layer melts. Specifically, when the resin composition layer is heated at a constant temperature rise rate to melt the resin, in the initial stage, the melt viscosity decreases with the temperature rise, and then, when it exceeds a certain degree, the melt viscosity rises with the temperature rise. The minimum melt viscosity means the melt viscosity of such a minimum point. The minimum melt viscosity of the resin composition layer can be measured by a dynamic viscoelasticity method, for example, according to the method as described in <Measurement of minimum melt viscosity> mentioned later.

The insulating layer formed using the resin composition layer (or resin composition) in the resin sheet of this invention shows the characteristic that it is excellent in the peeling strength (copper foil peeling strength) with a conductor layer. As peeling strength, Preferably it is 0.4 kgf/cm or more, More preferably, it is 0.5 kgf/cm or more, More preferably, it is 0.6 kgf/cm or more. In addition, although the upper limit of peeling strength is not specifically limited, It can be set as 1.2 kgf/cm or less, 1 kgf/cm or less, etc. Evaluation of copper foil peeling strength can be measured according to the method as described in <The measurement of adhesion strength with copper foil (copper foil peeling strength), and evaluation of reflow resistance>> mentioned later.

The insulating layer formed using the resin composition layer (or resin composition) in the resin sheet of this invention shows the characteristic that it is excellent in reflow resistance. Even if the insulating layer formed using the resin composition layer (or resin composition) in the resin sheet of the present invention is passed three or more times through a reflow device that reproduces a solder reflow temperature of 260°C peak temperature, there is no abnormality at all. it is preferable Evaluation of reflow tolerance can be measured according to the method as described in <The measurement of adhesion strength with copper foil (copper foil peeling strength), and evaluation of reflow tolerance>> mentioned later.

The insulating layer formed using the resin composition layer (or resin composition) in the resin sheet of this invention shows the characteristic that it is excellent in a flame retardance. It is preferable that a flame retardance is superior to "V1", "V0" or that in UL flame resistance test standard (UL-94). Evaluation of flame retardance can be measured according to the method as described in <Evaluation of flame retardance> mentioned later.

The resin sheet of this invention can be used suitably in manufacture of a semiconductor chip package, in order to form an insulating layer (resin sheet for insulation of a semiconductor chip package).

For example, the resin sheet of the present invention can be suitably used for forming an insulating layer of a circuit board (resin sheet for an insulating layer of a circuit board), and an interlayer insulating layer on which a conductor layer is formed by plating is formed thereon. In order to do this (for the interlayer insulating layer of a circuit board which forms a conductor layer by plating), it can use more suitably. Examples of the package using such a substrate include FC-CSP, MIS-BGA package, and ETS-BGA package.

The resin sheet of the present invention can be suitably used for sealing a semiconductor chip (resin sheet for sealing semiconductor chip) or for forming wiring in a semiconductor chip (resin sheet for forming wiring for semiconductor chip), for example, It can be suitably used for fan-out type WLP (Wafer Level Package), fan-in type WLP, fan-out type PLP (Panel Level Package), and fan-in type PLP. Moreover, it can be used suitably also for the MUF (Molding Under Filling) material etc. which are used after connecting a semiconductor chip to a board|substrate.

Furthermore, the resin sheet of this invention can be used suitably in order to form the insulating layer of circuit boards, such as another wide use which high insulation reliability is calculated|required, for example, printed wiring boards.

[circuit board]

The circuit board of this invention contains the insulating layer formed with the hardened|cured material of the resin composition of this invention.

As an example of the manufacturing method of the circuit board of this invention is shown in FIG. 1 and FIG. 2,

(1) a step of preparing a substrate with a wiring layer having a substrate and a wiring board provided on at least one surface of the substrate;

(2) a step of laminating the resin sheet of the present invention on a substrate with a wiring layer so that the wiring layer is embedded in the resin composition layer, and thermosetting to form an insulating layer;

(3) A step of interconnecting the wiring layers between layers is included. Moreover, the manufacturing method of a circuit board may include the process of (4) removing a base material.

The step (3) is not particularly limited as long as the wiring layers can be interconnected between layers, but at least one of a step of forming a via hole in the insulating layer and forming a conductor layer, and a step of grinding or grinding the insulating layer to expose the wiring layer. It is preferable that the process of

<Process (1)>

Step (1) is a step of preparing a substrate with a wiring layer, which includes a substrate and a wiring layer provided on at least one surface of the substrate. As an example is shown to Fig.1 (A) and Fig.2 (A), the base material 10 with a wiring layer has the 1st metal layer 12 which are a part of the base material 11 on both surfaces of the base material 11, The 2nd metal layer It has (13), respectively, and has the wiring layer 14 on the surface on the opposite side to the surface on the side of the base material 11 of the 2nd metal layer 13. As shown in FIG. Specifically, a dry film (photosensitive resist film) is laminated on a substrate, and exposed and developed under predetermined conditions using a photomask to form a pattern dry film. After forming a wiring layer by the electrolytic plating method using the developed pattern dry film as a plating mask, the pattern dry film is peeled. In addition, although it has become a form which has the 1st metal layer 12 and the 2nd metal layer 13 in FIG.1 and FIG.2, it is not necessary to have the 1st metal layer 12 and the 2nd metal layer 13.

Examples of the substrate include substrates such as glass epoxy substrates, metal substrates (stainless steel or cold rolled steel sheet (SPCC), etc.), polyester substrates, polyimide substrates, BT resin substrates, thermosetting polyphenylene ether substrates, etc. and metal layers, such as copper foil, may be formed in the board|substrate surface. Moreover, as shown to FIG.1(A), FIG.2(A), the 1st metal layer 12 and the 2nd metal layer 13 which can peel on the surface of a base material (for example, the carrier copper made from Mitsui Kinzoku Corporation) Metal layers, such as ultra-thin copper foil with foil, and a brand name "Micro Thin") may be formed.

The dry film is not particularly limited as long as it is a photosensitive dry film made of a photoresist composition, and for example, a dry film such as a novolak resin or an acrylic resin can be used. A commercial item may be used for a dry film.

The conditions for laminating the base material and the dry film are the same as the conditions for laminating the resin sheet in the step (2) to be described later so as to be embedded in the wiring layer, and the preferable ranges are also the same.

After laminating the dry film on the substrate, exposure and development are performed under predetermined conditions using a photomask to form a desired pattern on the dry film.

The line (circuit width)/space (width between circuits) ratio of the wiring layer is not particularly limited, but is preferably 20/20 µm or less (that is, the pitch is 40 µm or less), more preferably 10/10 µm or less, still more preferably Preferably, it is 5/5 μm or less, more preferably 1/1 μm or less, and particularly preferably 0.5/0.5 μm or less. The pitch need not be the same throughout the wiring layer. The minimum pitch of the wiring layers may be 40 µm or less, 36 µm or less, or 30 µm or less.

After forming the pattern of the dry film, a wiring layer is formed and the dry film is peeled off. Here, formation of the wiring layer can be performed by the plating method using the dry film in which the desired pattern was formed as a plating mask.

The conductor material used for the wiring layer is not specifically limited. In a suitable embodiment, the wiring layer contains one or more metals selected from the group consisting of gold, platinum, palladium, silver, copper, aluminum, cobalt, chromium, zinc, nickel, titanium, tungsten, iron, tin and indium. . The wiring layer may be a single metal layer or an alloy layer, and the alloy layer is, for example, an alloy of two or more metals selected from the group described above (eg, a nickel-chromium alloy, a copper-nickel alloy, and a copper-titanium alloy). ) can be mentioned. Among these, from the viewpoint of versatility of wiring layer formation, cost, ease of patterning, etc., a single metal layer of chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver or copper, or a nickel-chromium alloy, a copper-nickel alloy, An alloy layer of a copper/titanium alloy is preferable, and a single metal layer of chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver or copper, or an alloy layer of a nickel/chromium alloy is more preferable, and the single metal layer of copper is more preferable. more preferably.

The thickness of the wiring layer varies depending on the desired design of the wiring board, but is preferably 3 µm to 35 µm, more preferably 5 µm to 30 µm, still more preferably 10 µm to 20 µm, or 15 µm. In the case of employing a step of grinding or grinding the insulating layer and exposing the wiring layer to connect the wiring layers between layers in step (3), it is preferable that the thickness of the wiring to be connected between the layers is different from that of the wiring not to be connected. The thickness of a wiring layer can be adjusted by repeating said pattern formation. Although the thickness of the wiring layer (conductive filler) with the thickness among each wiring layer changes with the design of a desired wiring board, Preferably it is 100 micrometers or less and 2 micrometers or more. Moreover, the wiring for interlayer connection may be made into a convex type.

After forming the wiring layer, the dry film is peeled off. Peeling of a dry film can be performed using alkaline peeling liquids, such as a sodium hydroxide solution, for example. If necessary, unnecessary wiring patterns may be removed by etching or the like to form a desired wiring pattern. The pitch of the wiring layer to be formed is as described above.

<Process (2)>

A process (2) is a process of laminating|stacking the resin sheet of this invention on a base material with a wiring layer so that a wiring layer may be embedded in the resin composition layer, thermosetting it, and forming an insulating layer. As an example is shown in FIG. 1(B), the wiring layer 14 of the base material with a wiring layer obtained in the above-described step (1) is laminated so as to be embedded in the resin composition layer 21 of the resin sheet 20, and a resin The resin composition layer 21 of the sheet 20 is thermosetted to form an insulating layer (reference numeral 21' in Fig. 1(C) or Fig. 2(B)). The resin sheet 20 is formed by laminating the resin composition layer 21 and the support body 22 in this order.

Lamination of the wiring layer and the resin sheet can be performed by, for example, heat-compressing the resin sheet to the wiring layer from the support side after removing the protective film of the resin sheet. As a member (hereinafter also referred to as a "thermal compression member") which heat-compresses a resin sheet to a wiring layer, a heated metal plate (SUS mirror plate etc.), a metal roll (SUS roll), etc. are mentioned, for example. In addition, it is preferable to press through an elastic material, such as a heat-resistant rubber, so that a resin sheet may fully harvest the surface unevenness|corrugation of a wiring layer, without directly pressing a thermocompression-bonding member to a resin sheet.

What is necessary is just to perform lamination|stacking of a wiring layer and a resin sheet by the vacuum lamination method after removing the protective film of a resin sheet. In the vacuum lamination method, the thermocompression bonding temperature is preferably in the range of 60°C to 160°C, more preferably 80°C to 140°C, and the thermocompression compression pressure is preferably 0.098 MPa to 1.77 MPa, more preferably is in the range of 0.29 MPa to 1.47 MPa, and the heat compression time is preferably in the range of 20 seconds to 400 seconds, more preferably in the range of 30 seconds to 300 seconds. Lamination is preferably performed under reduced pressure conditions of a pressure of 13 hPa or less.

After lamination, a smoothing treatment of the laminated resin sheets may be performed under normal pressure (under atmospheric pressure), for example, by pressing the thermocompression-bonding member from the support side. The press conditions of the smoothing process can be made into the same conditions as the thermocompression-bonding conditions of the said lamination|stacking. In addition, you may perform lamination|stacking and a smoothing process continuously using the said commercially available vacuum laminator.

After a resin composition layer is laminated|stacked on the base material with a wiring layer so that a wiring layer may be embedded, the resin composition layer is thermosetted and the insulating layer is formed. For example, although the thermosetting conditions of a resin composition layer also differ depending on the kind of resin composition, etc., a curing temperature can be made into the range of 120 degreeC - 240 degreeC, and hardening time can be made into the range of 5 minutes - 120 minutes. Before thermosetting a resin composition layer, you may preheat a resin composition layer to temperature lower than hardening temperature.

The support of the resin sheet may be peeled off after laminating the resin sheet on the substrate with a wiring layer and thermosetting, and as an example is shown in Fig. 2(B), the support may be peeled off before laminating the resin sheet on the substrate with a wiring layer. good. In addition, before the roughening process mentioned later, you may peel a support body.

<Process (3)>

Step (3) is a step of interconnecting the wiring layers between layers. In detail, it is a process of forming a via hole in an insulating layer, forming a conductor layer, and connecting wiring layers between layers (refer FIGS. 1(C) and (D)). Alternatively, the insulating layer is polished or ground to expose the wiring layer to connect the wiring layers between layers (refer to Fig. 2(C)).

In the case of employing a process of forming a via hole in the insulating layer and forming a conductor layer to connect the wiring layers between layers, the formation of the via hole is not particularly limited. Examples include laser irradiation, etching, mechanical drilling, etc., but by laser irradiation It is preferred to be carried out. This laser irradiation can be performed using any suitable laser processing machine using a carbon dioxide laser, a YAG laser, an excimer laser, or the like as a light source. In detail, as shown in FIG. 1(C) as an example, in the step (3), laser irradiation is performed from the surface side of the support 22 and penetrates through the support 22 and the insulating layer 21'. A via hole 31 exposing the wiring layer 14 is formed.

Conditions for laser irradiation are not particularly limited, and laser irradiation may be performed by any suitable process according to a conventional method according to the selected means.

Although the shape of the via hole, ie, the shape of the outline of an opening seen in an extending|stretching direction, is not specifically limited, Generally, it becomes circular (approximately circular).

After the via hole is formed, a so-called desmear process, which is a smear removal process in the via hole, may be performed. When the formation of the conductor layer described later is performed by a plating process, for example, a wet desmear treatment may be performed on the via hole, and when the conductor layer is formed by a sputtering process, for example, You may perform dry desmear processes, such as a plasma processing process. In addition, a desmear process may serve also as a roughening process process.

Before forming the conductor layer, a roughening treatment may be performed on the via hole and the insulating layer. For the roughening process, well-known means and conditions normally performed can be employ|adopted. Examples of the dry roughening treatment include plasma treatment, and examples of the wet roughening treatment include a method of performing swelling treatment with a swelling solution, roughening treatment with an oxidizing agent, and neutralization treatment with a neutralizing solution in this order. .

After the via hole is formed, as an example is shown in Fig. 1(D), the conductor layer 40 is formed. The conductor material constituting the conductor layer is not particularly limited, and the conductor layer can be formed by any suitable method known in the art, such as plating, sputtering, and vapor deposition, and is preferably formed by plating. In a suitable embodiment, for example, a conductor layer having a desired wiring pattern can be formed by plating the surface of the insulating layer by a conventionally known technique such as a semiadditive method or a positive additive method. Moreover, when the support body in a resin sheet is metal foil, the conductor layer which has a desired wiring pattern can be formed by conventionally well-known techniques, such as a subtractive method. The conductor layer may have a single layer structure or a multilayer structure in which two or more single metal layers or alloy layers made of different types of metals or alloys are laminated.

Specifically, the plating seed layer 41 is formed on the surface of the insulating layer by electroless plating. Next, on the formed plating seed layer, a mask pattern for exposing a portion of the plating seed layer in correspondence to a desired wiring pattern is formed. On the exposed plating seed layer, an electrolytic plating layer 42 is formed by electrolytic plating. In that case, the filled via 61 may be formed by filling the via hole 31 by electroplating together with the formation of the electrolytic plating layer 42 . After the electrolytic plating layer 42 is formed, the mask pattern is removed. Thereafter, the unnecessary plating seed layer is removed by etching or the like, and the conductor layer 40 having a desired wiring pattern can be formed. In addition, when forming a conductor layer, the dry film used for formation of a mask pattern is the same as that of the said dry film.

The conductor layer may include, for example, an electrode pad (land) on which an external terminal can be mounted, as well as an on-line wiring. In addition, the conductor layer may be comprised only with the electrode pad.

Further, the conductor layer may be formed by forming an electrolytic plating layer and a field via without using a mask pattern after forming the plating seed layer, and then performing patterning by etching.

In the case of employing a step of polishing or grinding the insulating layer to expose the wiring layer to connect the wiring layers between layers, the polishing method or grinding method of the insulating layer is not particularly limited as long as the wiring layer can be exposed and the polishing or grinding surface is horizontal. A conventionally known polishing method or grinding method can be applied, for example, a chemical mechanical polishing method using a chemical mechanical polishing apparatus, a mechanical polishing method such as buffing, a flat grinding method by rotating a whetstone, etc. . Like the process of forming a via hole in an insulating layer and forming a conductor layer to connect wiring layers between layers, the process of performing a smear removal process and a roughening process may be performed, and you may form a conductor layer. In addition, as an example is shown in FIG.2(C), it is not necessary to expose all the wiring layers 14, You may expose a part of wiring layers 14. As shown in FIG.

<Process (4)>

The manufacturing method of a circuit board may include the process (4) other than process (1)-(3). Process (4) is a process of removing a base material as an example is shown to FIG.1(E), FIG.2(D), and forming the circuit board 1 of this invention. The method of removing the substrate is not particularly limited. In one suitable embodiment, the substrate is peeled from the circuit board at the interface between the first and second metal layers, and the second metal layer is removed by etching, for example, with an aqueous copper chloride solution or the like. If necessary, you may peel a base material in the state which protected the conductor layer with the protective film.

[Semiconductor Chip Package]

A first aspect of the semiconductor chip package of the present invention is a semiconductor chip package in which a semiconductor chip is mounted on the circuit board of the present invention. A semiconductor chip package can be manufactured by bonding a semiconductor chip to the circuit board of the said invention.

As long as the terminal electrode of the semiconductor chip is connected to the circuit wiring of the circuit board and the conductor is connected, the bonding conditions are not particularly limited, and well-known conditions used in flip-chip mounting of the semiconductor chip may be used. Moreover, you may join between a semiconductor chip and a circuit board through an insulating adhesive agent.

One suitable embodiment presses the semiconductor chip to the circuit board. As the crimping conditions, for example, the crimping temperature is in the range of 120°C to 240°C (preferably in the range of 130°C to 200°C, more preferably in the range of 140°C to 180°C), and the crimping time is in the range of 1 second to 60°C. It can be set as the range of seconds (preferably from 5 seconds to 30 seconds).

Another preferred embodiment is to reflow and bond the semiconductor chip to the circuit board. As reflow conditions, it can be set as the range of 120 degreeC - 300 degreeC, for example.

After bonding a semiconductor chip to a circuit board, it is also possible to obtain a semiconductor chip package by filling a semiconductor chip with a mold under filling material, for example. The method of filling with a mold under filling material can be implemented by a well-known method. The resin composition or resin sheet of the present invention can be used also as a mold underfill material.

In the second aspect of the semiconductor chip package of the present invention, for example, the semiconductor chip package (Fan-out type WLP) 100 shown in FIG. 3 includes the sealing layer 120 and the resin composition of the present invention. or a semiconductor chip package made of a resin sheet. The semiconductor chip package 100 is on the opposite side to the semiconductor chip 110 , the encapsulation layer 120 formed to cover the periphery of the semiconductor chip 110 , and the side covered with the encapsulation layer of the semiconductor chip 110 . A redistribution forming layer (insulating layer) 130 , a conductor layer (rewiring layer) 140 , a solder resist layer 150 , and bumps 160 are provided. The manufacturing method of such a semiconductor chip package,

(A) a step of laminating a temporarily fixed film on a substrate,

(B) the step of temporarily fixing the semiconductor chip on the temporarily fixing film,

(C) the process of laminating|stacking the resin composition layer of the resin sheet of this invention on a semiconductor chip, or apply|coating the resin composition of this invention on a semiconductor chip, thermosetting, and forming a sealing layer;

(D) the step of peeling the substrate and the temporarily fixed film from the semiconductor chip,

(E) a step of forming a redistribution forming layer (insulating layer) on the surface of the semiconductor chip, the substrate and the temporarily fixed film,

(F) forming a conductor layer (rewiring layer) on the redistribution forming layer (insulating layer); and

(G) The process of forming a soldering resist layer on a conductor layer, including. Moreover, the manufacturing method of a semiconductor chip package may include the process of (H) dicing a plurality of semiconductor chip packages into individual semiconductor chip packages to separate them into pieces.

<Process (A)>

Process (A) is a process of laminating|stacking a temporarily fixed film on a base material. Lamination conditions e of the base material and the temporarily fixed film are the same as the lamination conditions of the wiring layer and the resin sheet in the step (2) in the method for manufacturing a circuit board, and the preferable range is also the same.

The material used for the base material is not particularly limited. Examples of the substrate include a silicon wafer; glass wafer; glass substrate; metal substrates such as copper, titanium, stainless steel, and cold pressure steel sheet (SPCC); substrates (eg, FR-4 substrates) in which glass fibers are impregnated with an epoxy resin or the like and thermally cured; The board|substrate etc. which consist of bismaleimide triazine resin (BT resin) are mentioned.

Temporarily fixing film, while being able to peel from a semiconductor chip in the process (D) mentioned later, if a semiconductor chip can be temporarily fixed, a material will not be specifically limited. A commercial item can be used for a temporarily fixed film. As a commercial item, the Nitto Denko Co., Ltd. rebaler etc. are mentioned.

<Process (B)>

A process (B) is a process of processing a semiconductor chip on a temporarily fixed film. Temporarily fixing the semiconductor chip can be performed using a known device such as a flip chip bonder or a die bonder. The layout and the number of arrangement of the semiconductor chip can be appropriately set according to the shape, size, number of production of the target semiconductor package, etc. of the temporarily fixed film, for example, arranged in a matrix form of multiple rows and multiple columns can be determined

<Process (C)>

A process (C) is a process of laminating|stacking the resin composition layer of the resin sheet of this invention on a semiconductor chip, or apply|coating the resin composition of this invention on a semiconductor chip, thermosetting, and forming a sealing layer. At a process (C), it is preferable to laminate|stack the resin composition layer of the resin sheet of this invention on a semiconductor chip, thermoset it, and form a sealing layer.

Lamination of the semiconductor chip and the resin sheet can be performed by, for example, heat-compressing the resin sheet to the semiconductor chip from the support side after removing the protective film of the resin sheet. As a member (henceforth a "thermal compression bonding member") which heat-compresses a resin sheet to a semiconductor chip, a heated metal plate (SUS mirror plate etc.), a metal roll (SUS roll), etc. are mentioned, for example. In addition, it is preferable to press through an elastic material, such as a heat-resistant rubber, so that a resin sheet may fully harvest on the surface unevenness|corrugation of a semiconductor chip, without directly pressing a thermocompression-bonding member to a resin sheet.

In addition, you may perform lamination|stacking of a semiconductor chip and a resin sheet by the vacuum lamination method after removing the protective film of a resin sheet. The lamination conditions in the vacuum lamination method are the same as the lamination conditions of the wiring layer and the resin sheet in the process (2) in the manufacturing method of a circuit board, and a preferable range is also the same.

The support body of a resin sheet may peel after laminating|stacking a resin sheet on a semiconductor chip and thermosetting, and may peel a support body before laminating|stacking a resin sheet on a semiconductor chip.

As application|coating conditions of a resin composition, it is the same as the application|coating conditions at the time of forming the resin composition layer in the resin sheet of this invention, and a preferable range is also the same.

<Process (D)>

A process (D) is a process of peeling a base material and a temporarily fixed film from a semiconductor chip. The peeling method can be appropriately changed depending on the material of the temporarily fixed film, etc., for example, by heating the temporarily fixed film, foaming (or expanding) to peel the method, and irradiating ultraviolet rays from the substrate side, the temporarily fixed film The method of reducing adhesive force and peeling, etc. are mentioned.

In the method of peeling the temporarily fixed film by heating, foaming (or expanding), heating conditions are usually at 100 ° C. to 250 ° C. for 1 second to 90 seconds or 5 minutes to 15 minutes. In addition, in the method of peeling by irradiating ultraviolet rays from the base material side to reduce the adhesive force of the temporarily fixed film, the irradiation amount of ultraviolet rays is usually 10mJ/cm 2 to 1000mJ/cm 2 .

<Process (E)>

A process (E) is a process of forming a redistribution forming layer (insulating layer) in the surface which peeled the base material and temporarily fixed film of a semiconductor chip.

The material for forming the redistribution forming layer (insulating layer) is not particularly limited as long as it has insulation at the time of forming the redistribution forming layer (insulating layer), and from the viewpoint of easiness of manufacturing a semiconductor chip package, a photosensitive resin or a thermosetting resin is preferable . As a thermosetting resin, you may use the resin composition of the same composition as the resin composition for forming the resin sheet of this invention.

After formation of the redistribution forming layer (insulating layer), a via hole may be formed in the redistribution forming layer (insulating layer) for interlayer connection between a semiconductor chip and a conductor layer to be described later.

In forming the via hole, when the material for forming the redistribution forming layer (insulating layer) is a photosensitive resin, first, the surface of the redistribution forming layer (insulating layer) is irradiated with active energy rays through a mask pattern to form the most wiring layer of the irradiated portion. is photocured.

As an active energy ray, an ultraviolet-ray, a visible ray, an electron beam, X-ray etc. are mentioned, for example, Especially an ultraviolet-ray is preferable. The irradiation amount of ultraviolet rays and irradiation time can be suitably changed according to the photosensitive resin. As the exposure method, either a contact exposure method in which the mask pattern is exposed in close contact with the redistribution forming layer (insulating layer) or a non-contact exposure method in which the mask pattern is exposed using parallel light without being in close contact with the redistribution forming layer (insulating layer). You may use it.

Next, the rewiring forming layer (insulating layer) is developed and an unexposed portion is removed to form a via hole. Any of wet development and dry development is suitable for image development. A well-known developing solution can be used for the developing solution used by wet image development.

As a method of image development, a dip method, a paddle method, a spray method, a brushing method, a scraping method etc. are mentioned, for example, From a viewpoint of resolution, a paddle method is suitable.

When the material for forming the redistribution forming layer (insulating layer) is a thermosetting resin, the formation of the via hole is not particularly limited, and laser irradiation, etching, mechanical drilling, etc. are mentioned, but it is preferably performed by laser irradiation. Laser irradiation can be performed using any suitable laser processing machine using a carbon dioxide gas laser, a UV-YAG laser, an excimer laser, or the like as a light source.

Conditions for laser irradiation are not particularly limited, and laser irradiation may be performed by any suitable process according to a conventional method according to the selected means.

Although the shape of the via hole, ie, the outline shape of the opening seen in the extending|stretching direction, is not specifically limited, Generally, it becomes circular (approximately circular). The top diameter of the via hole (the opening diameter of the rewiring forming layer (insulating layer) surface) is preferably 50 µm or less, more preferably 30 µm or less, still more preferably 20 µm or less. Although a lower limit is not specifically limited, Preferably it is 10 micrometers or more, More preferably, it is 15 micrometers or more, More preferably, it is 20 micrometers or more.

<Process (F)>

The step (F) is a step of forming a conductor layer (rewiring layer) on the rewiring forming layer (insulating layer). The method of forming the conductor layer on the rewiring forming layer (insulating layer) is the same as the method of forming the conductor layer after forming a via hole in the insulating layer in step (3) in the circuit board manufacturing method, and the preferred range is also same. Alternatively, the steps (E) and (F) may be repeated to alternately stack (build-up) the conductor layers (rewiring layer) and the redistribution forming layer (insulating layer).

<Process (G)>

A process (G) is a process of forming a soldering resist layer on a conductor layer.

The material which forms a soldering resist layer will not be specifically limited if it has insulation at the time of soldering resist layer formation, From a viewpoint of the manufacturing easiness of a semiconductor chip package, photosensitive resin and thermosetting resin are preferable. As a thermosetting resin, you may use the resin composition of the same composition as the resin composition for forming the resin sheet of this invention.

In addition, in a process (G), you may perform the bumping process which forms a bump as needed. The bumping process can be performed by a well-known method, such as a solder ball and solder plating. In addition, formation of a via hole in a bumping process can be performed like the process (E).

<Process (H)>

The manufacturing method of a semiconductor chip package may include the process (H) in addition to the process (A)-(G). The step (H) is a step of dicing a plurality of semiconductor chip packages into individual semiconductor chip packages to separate them into pieces.

A method of dicing the semiconductor chip package into individual semiconductor chip packages is not particularly limited, and a known method can be used.

A third aspect of the semiconductor chip package of the present invention is, for example, a redistribution forming layer (insulating layer) 130 and solder in a semiconductor chip package (Fan-out type WLP) as shown in FIG. 3 as an example. It is a semiconductor chip package in which the resist layer 150 is made of the resin composition or resin sheet of the present invention.

[Semiconductor device]

Examples of the semiconductor device on which the semiconductor chip package of the present invention is to be mounted include electrical products (for example, computers, mobile phones, smartphones, tablet-type devices, wearable devices, digital cameras, medical devices, televisions, etc.) and vehicles (eg, For example, various semiconductor devices provided in motorcycles, automobiles, electric vehicles, ships, aircraft, etc.) may be mentioned.

[Example]

Hereinafter, although an Example demonstrates this invention concretely, this invention is not limited to these Examples. In addition, in the following description, "part" and "%" indicating quantity mean "part by mass" and "% by mass", respectively, unless otherwise specified.

<Measurement of adhesion strength with copper foil (copper foil peeling strength) and evaluation of reflow resistance>

(1) Base treatment of laminated board

A substrate (“R1515A” manufactured by Panasonic, 0.2 mm thick) on which the copper foil of a glass cloth-based epoxy resin double-sided copper clad laminate was etched out was put into an oven at 190 ° C. .

(2) Lamination of resin sheets

The resin composition layer exposed by peeling the protective film from the resin sheet produced in the Examples and Comparative Examples was subjected to a batch-type vacuum pressurization laminator (manufactured by Nikko Materials Co., Ltd., two-stage build-up laminator "CVP700") to resin The composition layer was laminated on both surfaces of the substrate so as to be bonded to the substrate. Lamination|stacking was performed by pressure-reducing for 30 second and making atmospheric|air pressure 13 hPa or less, and then crimping|bonding at 110 degreeC and pressure 0.74 MPa for 30 second.

(3) Lamination of copper foil

After lamination of the resin sheet, the release PET as a support is peeled off, and the laminated side of an ultra-low-illuminance electrolytic copper foil ("TQ-M4-VSP" manufactured by Mitsui Kinzoku Kogyo Co., Ltd., thickness 12 µm) is placed on the resin composition layer, and the batch Using a vacuum pressurized laminator (manufactured by Nikko Materials Co., Ltd., two-stage build-up laminator "CVP700"), it laminated|stacked on both surfaces of a board|substrate so that copper foil and a resin composition layer might be joined. Lamination|stacking was performed by pressure-reducing for 30 second and making atmospheric|air pressure 13 hPa or less, and then crimping|bonding at 110 degreeC and pressure 0.74 MPa for 30 second. Next, the laminated resin composition layer was smoothed by hot pressing under atmospheric pressure at 100° C. and 0.5 MPa for 60 seconds.

(4) thermosetting of the resin composition layer

After lamination of the ultra-low illuminance electrolytic copper foil, at a temperature of 100°C, put into an oven at 100°C for 30 minutes, then at a temperature of 190°C, transfer to an oven at 190°C for 90 minutes, heat curing to form an insulating layer formed, and a substrate was prepared.

(5) Measurement of adhesion strength (copper foil peel strength) with copper foil (conductor layer)

The substrate prepared in (4) above was cut into small pieces of 150 mm x 30 mm. A notch of 10 mm in width and 100 mm in length was put in the copper foil portion of the small piece, and one end of the copper foil was peeled off and picked with tongs (manufactured by T.S. Co., Autocom-type testing machine AC-50C-SL), Instron Using a universal testing machine, the load at the time of pulling out 35 mm in the vertical direction at a speed of 50 mm/min in room temperature was measured, and it was set as the copper foil peeling strength. Measurement was performed on three pieces, and the average value was shown.

(6) Evaluation of reflow resistance

The substrate prepared in (4) above was cut into small pieces of 100 mm x 50 mm. Thereafter, it was passed through a reflow device ("HAS-6116" manufactured by Nippon Antom Co., Ltd.) that reproduces the solder reflow temperature of 260°C three times (reflow temperature profile conforms to IPC/JEDEC J-STD-020C) ). The evaluation was performed on three small pieces, and by visual observation, those having an abnormality such as peeling even in a part of the copper foil were evaluated as x, and those having no abnormality at all in all the small pieces were evaluated as ○.

<Evaluation of flame retardancy>

(1) Base treatment of laminated board

A substrate (“R1515A” manufactured by Panasonic, 0.2 mm thick) on which the copper foil of a glass cloth-based epoxy resin double-sided copper clad laminate was etched out was put into an oven at 190 ° C. .

(2) Lamination of resin sheets

The resin composition layer exposed by peeling the protective film from the resin sheet produced in Examples and Comparative Examples using a batch vacuum pressurized laminator (manufactured by Nichigo Materials Co., Ltd., two-stage build-up laminator "CVP700"), It laminated|stacked on both surfaces of a board|substrate so that the resin composition layer might bond with a board|substrate. Lamination|stacking was performed by pressure-reducing for 30 second and making atmospheric|air pressure 13 hPa or less, and then crimping|bonding at 110 degreeC and pressure 0.74 MPa for 30 second. Next, the laminated resin sheet was smoothed by hot pressing under atmospheric pressure at 100°C at a pressure of 0.5 MPa for 60 seconds.

(3) thermosetting of the resin composition layer

After lamination of the resin sheet, the release PET as a support is peeled off, put into an oven at 100°C under a temperature condition of 100°C for 30 minutes, then at a temperature of 190°C, after being transferred to an oven at 190°C for 90 minutes, heat It was cured to form an insulating layer, and a substrate was prepared.

(4) Evaluation of flame retardancy

Using the substrate prepared in (3) above, cut to a size of 12.7 mm × 127 mm for UL flame retardancy test, and grind the cross section with sandpaper (#1200, then #2800), base material thickness 0.2 mm, one side A test piece for a flammability test in which an insulating layer of 40 μm was laminated was prepared. Thereafter, according to the UL flame resistance test standard (UL-94), evaluation of V0 and V1 was performed. In addition, the case where there is no sample remaining after burning for 10 seconds is indicated by "x".

<Measurement of Minimum Melt Viscosity of Resin Composition Layer>

Only the resin composition layer was peeled from the mold release PET (support body) of the resin sheet produced in the Example and the comparative example, and the pellet for measurement (diameter 18mm, 1.2-1.3g) was produced by compressing with a metal mold|die. Thereafter, using a dynamic viscoelasticity measuring device (“Rheosol-G-3000” manufactured by U.B.M. Co., Ltd.), 1 g of the sample resin composition layer was 200 at an initiation temperature of 60° C. using a parallel plate having a diameter of 18 mm. The temperature was raised to °C at a temperature increase rate of 5 °C/min, and the dynamic viscoelasticity was measured under measurement conditions of a measurement temperature interval of 2.5 °C, a frequency of 1Hz, and a strain of 1deg, and the lowest melt viscosity (poise) was calculated.

<Evaluation of film formability of a film>

As a support, a PET film (“Lumira-R80” manufactured by Tore Corporation, 38 μm thick, softening point 130° C., “Releasable PET”) treated with an alkyd resin mold releasing agent (“AL-5” manufactured by Lintec) was prepared. On the release surface, the prepared resin varnish was applied so that the thickness of the resin composition layer after drying was 40 µm, dried at 80 to 120 °C (average 100 °C) for 5 minutes, and then the resin composition layer was uniformly formed into a film It observed visually, and made "(circle)" the thing in which the resin composition layer was formed uniformly into a film, and the thing in which the resin composition layer was not formed into a film was made into "x".

<Synthesis Example 1>

(Synthesis of a resin having a butadiene structure and a biphenylene-type phenol structure)

In a reaction vessel, 70 g of difunctional hydroxy group-terminated polybutadiene (G-3000 manufactured by Nippon Soda, number average molecular weight = 3000, hydroxy group equivalent = 1800 g/eq.) and diethylene glycol dimethyl ether (Tokyo Chemical Co., Ltd.) Preparation) 40 g and 0.005 g of dibutyltin laurate were mixed and uniformly dissolved. At the time of uniformity, the temperature was raised to 50° C., and while stirring again, 8 g of isophorone diisocyanate (IPDI manufactured by Evonik Dexa Japan, isocyanate group equivalent = 113 g/eq.) was added, and the reaction was carried out for about 3 hours. Next, after cooling the reaction product to room temperature, thereto, 22 g of a biphenylene type phenol resin (MEH-7851SS manufactured by Meiwa Chemical Co., Ltd., hydroxyl equivalent = 203 g/eq.) and diethylene glycol dimethyl ether (manufactured by Tokyo Chemical Industry Co., Ltd.) ) was added, and the temperature was raised to 80° C. while stirring, and the reaction was carried out for about 4 hours. The disappearance of the NCO peak at ^{2250 cm -1} was confirmed by FT-IR. With the confirmation of the disappearance of the NCO peak, it is regarded as the end point of the reaction, and after cooling the reaction product to room temperature, it is filtered through a 100-mesh filter cloth, and a resin having a butadiene structure and a biphenylene type phenol structure (hereinafter referred to as “resin 1”) There is) (50 mass % of non-volatile matter) was obtained. The number average molecular weight of Resin 1 was 5200.

<Synthesis Example 2>

(Synthesis of a resin having a butadiene structure and a biphenylene-type phenol structure)

In a reaction vessel, 59 g of bifunctional hydroxyl group-terminated polybutadiene (G-2000 manufactured by Nippon Soda, number average molecular weight = 2000, hydroxyl equivalent = 1200 g/eq.) and diethylene glycol dimethyl ether (Tokyo Chemical Industry Co., Ltd.) Preparation) 40 g and 0.005 g of dibutyltin laurate were mixed and uniformly dissolved. When it became uniform, the temperature was raised to 50° C., and while stirring again, 12 g of isophorone diisocyanate (IPDI manufactured by Evonik Dexa Japan, isocyanate group equivalent = 113 g/eq.) was added, and the reaction was carried out for about 3 hours. Next, after cooling the reaction product to room temperature, 29 g of a biphenylene-type phenol resin (MEH-7851M manufactured by Meiwa Kasei Co., Ltd., hydroxyl equivalent = 210 g/eq.) and diethylene glycol dimethyl ether (manufactured by Tokyo Chemical Industry Co., Ltd.) ) was added, and the temperature was raised to 80° C. while stirring, and the reaction was carried out for about 4 hours. The disappearance of the NCO peak at ^{2250 cm -1} was confirmed by FT-IR. A resin having a butadiene structure and a biphenylene type phenol structure (hereinafter referred to as “resin 2”) is regarded as the end point of the reaction with the confirmation of the disappearance of the NCO peak, and the reaction product is cooled to room temperature and then filtered through a 100-mesh filter cloth. There is) (50 mass % of non-volatile matter) was obtained. The number average molecular weight of Resin 2 was 4100.

<Synthesis Example 3>

(Synthesis of a resin having a hydrogenated butadiene structure and a naphthol aralkyl structure)

In a reaction vessel, 47 g of bifunctional hydroxyl group-terminated hydrogenated polybutadiene (GI-1000 manufactured by Nippon Soda, number average molecular weight = 1500, hydroxyl group equivalent = 830 g/eq.) and diethylene glycol dimethyl ether (Tokyo Chemical Co., Ltd.) 40 g (manufactured by a teacher) and 0.005 g of dibutyltin laurate were mixed and uniformly dissolved. At the time of uniformity, the temperature was raised to 50° C., and while stirring again, 15 g of isophorone diisocyanate (IPDI manufactured by Evonik Dexa Japan, isocyanate group equivalent = 113 g/eq.) was added, and the reaction was carried out for about 3 hours. Next, after cooling the reaction product to room temperature, 38 g of a naphthol aralkyl resin (SN-485 manufactured by Nippon Steel Chemicals, hydroxyl equivalent = 215 g/eq.) and diethylene glycol dimethyl ether (Tokyo Chemical Co., Ltd.) Preparation) 60 g was added, and the temperature was raised to 80° C. while stirring, and the reaction was carried out for about 4 hours. The disappearance of the NCO peak at ^{2250 cm -1} was confirmed by FT-IR. A resin having a butadiene structure and a naphthol aralkyl structure (hereinafter referred to as "resin 3") exists) (50 mass % of non-volatile matter) was obtained. The number average molecular weight of Resin 3 was 3100.

<Synthesis Example 4>

(Synthesis of a phenoxy resin having a bixylenol structure and a bisphenol AF structure)

In a reaction vessel, 190 g of a bixylenol-type epoxy resin (YX4000 manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 185), 168 g of bisphenol AF (manufactured by Tokyo Chemical Industry Co., Ltd., molecular weight 336), and 200 g of cyclohexanone were placed and dissolved by stirring. Then, 0.5 g of tetramethylammonium chloride solution was dripped, and it was made to react in nitrogen atmosphere at 180 degreeC for 5 hours. After completion of the reaction, it was filtered using a filter cloth and diluted with a solvent to obtain a phenoxy resin (a 1:1 solution of MEK having a solid content of 30% by mass and cyclohexanone) (hereinafter, a bixylenol structure and a bisphenol fluorene structure). A phenoxy resin having The epoxy equivalent of Resin A was 11200, and the weight average molecular weight was 33000. In addition, resin A had the following structural units.

<Example 1>

5 parts of bisphenol AF type epoxy resin ("YL7760" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 238), phenoxy resin ("YX7553BH30" manufactured by Mitsubishi Chemical Company), a 1:1 solution of cyclohexanone:MEK having a solid content of 30% by mass ) 10 parts, 1.5 parts of cyclohexanone, and 1.5 parts of methyl ethyl ketone (MEK) were heat-dissolved while stirring. What was heat-dissolved was cooled to room temperature, and there, 10 parts of resin 1, hardening accelerator ("1B2PZ-10M" manufactured by Shikoku Chemical Industry Co., Ltd., 1-benzyl-2-phenylimidazole, MEK solution of 10 mass % solid content) ) 0.5 parts, and a flame retardant (Sanko Corporation "HCA-HQ-HST", 10-(2,5-dihydroxyphenyl)-10-hydro-9-oxa-10-phosphaphenanthrene-10-oxide; average particle diameter of 1.5 μm) 2 parts, and spherical silica surface-treated with an aminosilane-based coupling agent (“KBM573” manufactured by Shin-Etsu Chemical Co., Ltd.) (“SO-C2” manufactured by Adomatex, average particle diameter of 0.5 μm; 0.38 mg/m 2 of carbon per unit surface area) were mixed, uniformly dispersed with a high-speed rotary mixer, and filtered through a cartridge filter ("SHP050" manufactured by ROKITECHNO) to prepare resin varnish 1.

As a support, a PET film (“Lumira-R80” manufactured by Tore Corporation, 38 μm thick, softening point 130° C., “Releasable PET”) treated with an alkyd resin mold releasing agent (“AL-5” manufactured by Lintec) was prepared. On this release surface, the resin varnish 1 is uniformly applied so that the thickness of the resin composition layer after drying the resin varnish 1 becomes 40 µm, and after drying at 80 to 120 ° C (average 100 ° C) for 5 minutes, poly as a protective film The rough surface of a propylene film ("Alpan MA-411" by OSFtex, 15 micrometers in thickness) was stuck so that it might bond with the resin composition layer, and the resin sheet 1 was produced.

<Example 2>

3 parts of biphenyl-type epoxy resins ("NC3000L" by Nippon Chemical Co., Ltd., epoxy equivalent 272), 2.5 parts of cyclohexanone, and 2.5 parts of MEK were heat-dissolved, stirring. What was heat-dissolved was cooled to room temperature, and there, 15 parts of resin 1, hardening accelerator (Shikoku Chemical Industry Co., Ltd. make, "1B2PZ-10M", 1-benzyl-2-phenylimidazole, MEK of 10 mass % of solid content) solution) 0.5 parts, and spherical silica surface-treated with an aminosilane-based coupling agent (“KBM573” manufactured by Shin-Etsu Chemical Co., Ltd.) (“SO-C4” manufactured by Adomatex, average particle diameter of 1 μm, per unit surface area) Carbon amount 0.31 mg/m 2) 35 parts were mixed, uniformly dispersed with a high-speed rotary mixer, and filtered with a cartridge filter ("SHP050" manufactured by ROKITECHNO) to prepare resin varnish 2.

Preparation of the resin sheet 1 WHEREIN: The resin varnish 1 was replaced with the resin varnish 2. Except for the above, a resin sheet 2 was produced in the same manner as in Example 1.

<Example 3>

4 parts of bisphenol AF-type epoxy resin (“YL7760” manufactured by Mitsubishi Chemical, 238 epoxy equivalent), 1 part of biphenyl type epoxy resin (“NC3100” manufactured by Nippon Chemical Co., Ltd., epoxy equivalent 258), 12 parts of Resin A, cyclo 1 part of hexanone and 1 part of methyl ethyl ketone (MEK) were heat-dissolved while stirring. What was heat-dissolved was cooled to room temperature, 20 parts of resin 2 there, a hardening accelerator (Shikoku Chemical Industry Co., Ltd. make, "1B2PZ-10M", 1-benzyl-2-phenylimidazole, MEK of 10 mass % of solid content) solution) 0.5 parts, and spherical silica surface-treated with an aminosilane-based coupling agent (“KBM573” manufactured by Shin-Etsu Chemical Co., Ltd.) (“SO-C2” manufactured by Adomatex, average particle diameter 0.5 μm, carbon per unit surface area) Amount 0.38 mg/m 2) 10 parts were mixed, uniformly dispersed with a high-speed rotary mixer, and filtered through a cartridge filter ("SHP050" manufactured by ROKITECHNO) to prepare resin varnish 3.

Preparation of the resin sheet 1 WHEREIN: The resin varnish 1 was replaced with the resin varnish 3. Except for the above, a resin sheet 3 was produced in the same manner as in Example 1.

<Example 4>

Bisphenol AF type epoxy resin (“YL7760” manufactured by Mitsubishi Chemical, epoxy equivalent 238) 2 parts, biphenyl type epoxy resin (“NC3000L” manufactured by Nippon Chemical Co., Ltd., epoxy equivalent 272) 2 parts, Resin A 12 parts, cyclo It was heat-dissolved, stirring 1.5 parts of hexanone and 1.5 parts of methyl ethyl ketone (MEK). What was heat-dissolved was cooled to room temperature, and there, 10 parts of resin 3, a hardening accelerator (the Shikoku Chemical Industry Co., Ltd. make, "1B2PZ-10M", 1-benzyl-2-phenylimidazole, MEK of 10 mass % of solid content) solution) 0.5 part, and a flame retardant (“HCA-HQ-HST” manufactured by Sanko Corporation, 10-(2,5-dihydroxyphenyl)-10-hydro-9-oxa-10-phosphaphenanthrene-10-oxide , average particle diameter of 1.5 μm) 1 part, and spherical silica surface-treated with an aminosilane coupling agent (“KBM573” manufactured by Shin-Etsu Chemical Co., Ltd.) (“SO-C2” manufactured by Adomatex, average particle diameter of 0.5 μm) , 0.38 mg/m 2 of carbon per unit surface area) were mixed, uniformly dispersed with a high-speed rotary mixer, and filtered through a cartridge filter ("SHP050" manufactured by ROKITECHNO) to prepare resin varnish 4.

Preparation of the resin sheet 1 WHEREIN: The resin varnish 1 was replaced with the resin varnish 4. Except for the above, a resin sheet 4 was produced in the same manner as in Example 1.

<Example 5>

3 parts of xylene structure containing epoxy resin ("YX7700" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 270), 2.5 parts of cyclohexanone, and 2.5 parts of MEK were dissolved by heating while stirring. What was heat-dissolved was cooled to room temperature, and there, 15 parts of resin 1, hardening accelerator (Shikoku Chemical Industry Co., Ltd. make, "1B2PZ-10M", 1-benzyl-2-phenylimidazole, MEK of 10 mass % of solid content) solution) 0.5 parts, and spherical silica surface-treated with an aminosilane-based coupling agent (“KBM573” manufactured by Shin-Etsu Chemical Co., Ltd.) (“SO-C4” manufactured by Adomatex, average particle diameter of 1 μm, per unit surface area) Carbon amount 0.31 mg/m 2) 35 parts were mixed, uniformly dispersed with a high-speed rotary mixer, filtered through a cartridge filter ("SHP050" manufactured by ROKITECHNO), and resin varnish 5 was produced.

Preparation of the resin sheet 1 WHEREIN: The resin varnish 1 was replaced with the resin varnish 5. Except for the above, it carried out similarly to Example 1, and produced the resin sheet 5.

<Example 6>

4 parts of dicyclopentadiene type epoxy resin (“HP-7200” manufactured by DIC, epoxy equivalent 258), 2 parts of flame retardant (“PX-200” manufactured by Daihachi Chemical Industries, Ltd.), 2.5 parts of cyclohexanone, MEK 2.5 The portion was dissolved by heating while stirring. What was heat-dissolved was cooled to room temperature, and there, 15 parts of Resin 1, active ester curing agent ("EXB-8000L-65TM" manufactured by DIC, MEK/toluene solution with a solid content of 65% by mass, active ester equivalent 220) 2 parts , a curing accelerator (manufactured by Shikoku Chemical Co., Ltd., “1B2PZ-10M”, 1-benzyl-2-phenylimidazole, a MEK solution having a solid content of 10% by mass) 0.5 parts, and an aminosilane-based coupling agent (Shin-Etsu Chemical) 35 parts of spherical silica surface-treated with "KBM573" manufactured by Kyoko Co., Ltd. ("SO-C4" manufactured by Adomatex, average particle diameter of 1 µm, carbon content per unit surface area of 0.31 mg/m2) is mixed, and uniformly with a high-speed rotary mixer and then filtered with a cartridge filter ("SHP050" manufactured by ROKITECHNO) to prepare resin varnish 6.

Preparation of the resin sheet 1 WHEREIN: The resin varnish 1 was replaced with the resin varnish 6. Except for the above, a resin sheet 6 was produced in the same manner as in Example 1.

<Example 7>

3 parts of naphthalene-type epoxy resin ("HP4032SS" manufactured by DIC Corporation, epoxy equivalent 142), 12 parts of Resin A, 1.5 parts of cyclohexanone, and 1.5 parts of methyl ethyl ketone (MEK) were dissolved by heating while stirring. What was heat-dissolved was cooled to room temperature, and there, 10 parts of resin 3, a hardening accelerator (the Shikoku Chemical Industry Co., Ltd. make, "1B2PZ-10M", 1-benzyl-2-phenylimidazole, MEK of 10 mass % of solid content) solution) 0.5 part, and a flame retardant (“HCA-HQ-HST” manufactured by Sanko Corporation, 10-(2,5-dihydroxyphenyl)-10-hydro-9-oxa-10-phosphaphenanthrene-10-oxide , average particle diameter of 1.5 µm) 2 parts, and spherical silica surface-treated with an aminosilane-based coupling agent (“KBM573” manufactured by Shin-Etsu Chemical Co., Ltd.) (“SO-C2” manufactured by Adomatex, average particle diameter of 0.5 μm) , 0.38 mg/m 2 of carbon per unit surface area) were mixed, uniformly dispersed with a high-speed rotary mixer, and filtered through a cartridge filter ("SHP050" manufactured by ROKITECHNO) to prepare a resin varnish 7.

Preparation of the resin sheet 1 WHEREIN: The resin varnish 1 was replaced with the resin varnish 7. Resin varnish 7 was produced in the same manner as in Example 1 except for the above.

<Comparative Example 1>

5 parts of bisphenol AF type epoxy resin ("YL7760" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 238), phenoxy resin ("YX7553BH30" manufactured by Mitsubishi Chemical Company), a 1:1 solution of cyclohexanone:MEK having a solid content of 30% by mass ) 10 parts, 1.5 parts of cyclohexanone, and 1.5 parts of methyl ethyl ketone (MEK) were heat-dissolved while stirring. What was heat-dissolved was cooled to room temperature, and there, 4 parts of bifunctional hydroxyl group terminal polybutadiene (Nippon Soda company G-3000, number average molecular weight =3000, hydroxyl group equivalent =1800 g/eq.), ratio 2 parts of phenylene type phenol resin (MEH-7851M solution (hydroxyl equivalent = 210 g/eq.) manufactured by Meiwa Chemicals, MEK solution having a nonvolatile content of 60% by mass), and a flame retardant (“HCA-HQ-HST” manufactured by Sanko Corporation); 10-(2,5-dihydroxyphenyl)-10-hydro-9-oxa-10-phosphaphenanthrene-10-oxide, average particle diameter 1.5 µm) 2 parts, and an aminosilane-based coupling agent (Shin-Etsu Chemical) 15 parts of spherical silica surface-treated with "KBM573" manufactured by Kakugo Co., Ltd. ("SO-C2" manufactured by Adomatex, average particle diameter 0.5 µm, carbon content per unit surface area 0.38 mg/m 2 ) is mixed, and a high-speed rotary mixer was dispersed to prepare resin varnish 8, but a separated material appeared and could not be filtered.

Similar to preparation of the resin sheet 1, although the resin varnish 1 was changed to the resin varnish 8 and preparation of the resin sheet 8 was attempted, a uniform coating film could not be formed (film film forming property), and the resin sheet 8 could not be produced. For this reason, evaluation of the minimum melt viscosity of a resin composition layer, copper foil peeling strength, reflow tolerance, and a flame retardance could not be performed.

<Comparative Example 2>

20 parts of Resin 1, 0.5 parts of a curing accelerator (manufactured by Shikoku Chemical Co., Ltd., "1B2PZ-10M", 1-benzyl-2-phenylimidazole, MEK solution having a solid content of 10% by mass), and an aminosilane-based coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Co., Ltd.) 35 parts of surface-treated spherical silica ("SO-C4" manufactured by Adomatex, average particle diameter of 1 µm, carbon content per unit surface area of 0.31 mg/m 2 ) is mixed, It was uniformly dispersed with a high-speed rotating mixer and filtered through a cartridge filter ("SHP050" manufactured by ROKITECHNO) to prepare a resin varnish 9.

Preparation of the resin sheet 1 WHEREIN: The resin varnish 1 was replaced with the resin varnish 9. Except for the above, a resin sheet 9 was produced in the same manner as in Example 1.

<Comparative Example 3>

3 parts of bisphenol AF type epoxy resin ("YL7760" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 238), 3 parts of phenoxy resin ("YX7553BH30" manufactured by Mitsubishi Chemical Company), a 1:1 solution of cyclohexanone:MEK having a solid content of 30% by mass ), 5 parts of phenoxy resin (“1256B40” manufactured by Mitsubishi Chemical, MEK solution having a solid content of 40% by mass), 1 part of cyclohexanone, and 1 part of methyl ethyl ketone (MEK) were dissolved with stirring while stirring. What was heat-dissolved was cooled to room temperature, and there, 20 parts of resin 1, hardening accelerator (Shikoku Chemical Industry Co., Ltd. make, "1B2PZ-10M", 1-benzyl-2-phenylimidazole, MEK of 10 mass % of solid content) solution) 0.5 parts, and spherical silica surface-treated with an aminosilane-based coupling agent (“KBM573” manufactured by Shin-Etsu Chemical Co., Ltd.) (“SO-C2” manufactured by Adomatex, average particle diameter 0.5 μm, carbon per unit surface area) Amount 0.38 mg/m 2) 5 parts were mixed, uniformly dispersed with a high-speed rotary mixer, and filtered through a cartridge filter ("SHP050" manufactured by ROKITECHNO) to prepare resin varnish 10.

Preparation of the resin sheet 1 WHEREIN: The resin varnish 1 was replaced with the resin varnish 10. Except for the above, it carried out similarly to Example 1, and produced the resin sheet 10.

Abbreviations etc. in the table below are as follows.

Resin 1: Resin having a butadiene structure and a biphenylene-type phenol structure synthesized in Synthesis Example 1

Resin 2: Resin having a butadiene structure and a biphenylene type phenol structure synthesized in Synthesis Example 2

Resin 3: Resin having a hydrogenated butadiene structure and a naphthol aralkyl structure synthesized in Synthesis Example 3

YL7760: Bisphenol AF type epoxy resin (manufactured by Mitsubishi Chemical, epoxy equivalent 238)

NC3000L: Biphenyl type epoxy resin (made by Nihon Kayaku, epoxy equivalent 272)

NC3100: Biphenyl type epoxy resin (manufactured by Nihon Kayaku, epoxy equivalent 258)

YX7700: Xylene structure-containing epoxy resin (manufactured by Mitsubishi Chemical Co., Ltd., epoxy equivalent 270)

HP-7200: dicyclopentadiene type epoxy resin (manufactured by DIC, epoxy equivalent 258)

HP4032SS: Naphthalene type epoxy resin (manufactured by DIC, epoxy equivalent 142)

SO-C2: Spherical silica surface-treated with an aminosilane coupling agent (“KBM573” manufactured by Shin-Etsu Chemical Co., Ltd.) (“SO-C2” manufactured by Adomatex Co., Ltd., average particle diameter 0.5 μm, carbon content per unit surface area 0.38 mg/m2)

SO-C4: Spherical silica surface-treated with an aminosilane-based coupling agent (“KBM573” manufactured by Shin-Etsu Chemical Co., Ltd.) (“SO-C4” manufactured by Adomatex Co., Ltd., average particle diameter 1 μm, carbon amount per unit surface area 0.31 mg/m2)

YX7553BH30: Phenoxy resin (manufactured by Mitsubishi Chemical, 1:1 solution of cyclohexanone:MEK having a solid content of 30% by mass)

1256B40: Phenoxy resin (made by Mitsubishi Chemical, MEK solution having a solid content of 40% by mass)

Resin A: A phenoxy resin synthesized in Synthesis Example 4 and having a bixylenol structure and a bisphenol fluorene structure

1B2PZ-10M: hardening accelerator (Shikoku Chemical Co., Ltd. make, 1-benzyl-2-phenylimidazole, MEK solution of 10 mass % of solid content)

HCA-HQ-HST: flame retardant (manufactured by Sanko, 10-(2,5-dihydroxyphenyl)-10-hydro-9-oxa-10-phosphaphenanthrene-10-oxide, average particle diameter 1.5 μm)

PX-200: Flame retardant (manufactured by Daiha Chigaku Kogyo Co., Ltd.)

G-3000: Bifunctional hydroxyl group terminal polybutadiene (manufactured by Nippon Soda, number average molecular weight = 3000, hydroxyl group equivalent = 1800 g/eq.)

MEH-7851M: Biphenylene type phenol resin (Meiwa Chemical Co., Ltd., hydroxyl equivalent = 210 g/eq.)

Content of (a) component: Content (mass %) of (a) component at the time of making the nonvolatile component of a resin composition 100 mass % is shown.

Content of (b) component: Content (mass %) of (b) component at the time of making the nonvolatile component of a resin composition 100 mass % is shown.

Content of (c) component: Content (mass %) of (c) component at the time of making the nonvolatile component of a resin composition 100 mass % is shown.

1 circuit board
10 Substrate with wiring layer
11 Substrate (core substrate)
12 first metal layer
13 second metal layer
14 wiring layer (buried wiring layer)
20 resin sheet
21 resin composition layer
21' insulating layer
22 support
31 via hole
40 conductor layer
41 Plating Seed Layer
42 electrolytic plating layer
61 field empty
100 semiconductor chip package
110 semiconductor chip
120 encapsulation layer
130 Rewiring forming layer (insulating layer)
140 conductor layer (rewiring layer)
150 Solder Resist Layer
160 bump

Claims (19)

(a) (i) a butadiene structural unit which may be hydrogenated, and (ii) a compound having at least one structural unit selected from the group consisting of a biphenylene-type phenol structural unit and a naphthol aralkyl structural unit;
(b) an epoxy resin having two or more epoxy groups and one or more aromatic rings in one molecule, and
(c) a resin composition containing an inorganic filler,
(c) The resin composition whose inorganic filler is 30 mass % or more, when the non-volatile component of a resin composition is 100 mass %. The epoxy resin according to claim 1, wherein the component (b) has two or more epoxy groups, one or more aromatic rings and fluorine atoms in one molecule; bisphenol A epoxy resin; bisphenol F-type epoxy resin; an epoxy resin having two or more epoxy groups and one or more biphenyl structures in one molecule; an epoxy resin having two or more epoxy groups and one or more condensed rings in one molecule; an epoxy resin having two or more epoxy groups and one or more xylene structures in one molecule; an epoxy resin having one or more glycidylamino groups, one or more epoxy groups, and one or more aromatic rings in one molecule; an epoxy resin having two or more epoxy groups, one or more aromatic rings, and a dicyclopentadienyl structure in one molecule; and at least one resin composition selected from the group consisting of an epoxy resin having two or more glycidyloxybenzene structures in one molecule. The epoxy resin according to claim 1, wherein the component (b) has two or more epoxy groups, one or more aromatic rings and fluorine atoms in one molecule; an epoxy resin having two or more epoxy groups and one or more biphenyl structures in one molecule; an epoxy resin having two or more epoxy groups and one or more condensed rings in one molecule; an epoxy resin having two or more epoxy groups and one or more xylene structures in one molecule; and at least one selected from the group consisting of an epoxy resin having two or more epoxy groups, one or more aromatic rings, and a dicyclopentadienyl structure in one molecule, the resin composition. The resin composition of Claim 1 whose number average molecular weights of (a) component are 1000-20000. The resin composition according to claim 1, wherein the content of the component (a) is 3% by mass to 40% by mass when the nonvolatile component of the resin composition is 100% by mass. The resin composition according to claim 1, wherein the content of the component (b) is 2% by mass to 30% by mass, when the nonvolatile component of the resin composition is 100% by mass. The resin composition of Claim 1 whose epoxy equivalent of (b) component is 200 or more. The resin composition according to claim 1, further comprising (d) a phenoxy resin. The resin composition according to claim 8, wherein the component (d) is a phenoxy resin containing a bisphenol AF structure. The resin composition according to claim 8, wherein the content of the component (d) is 1% by mass to 20% by mass, when the nonvolatile component of the resin composition is 100% by mass. The resin composition according to claim 1, further comprising (e) a curing agent. The resin composition according to claim 1, further comprising (g) a flame retardant. The resin composition according to claim 12, wherein the content of the component (g) is 1% by mass to 20% by mass, when the nonvolatile component of the resin composition is 100% by mass. The resin sheet which has a support body and the resin composition layer provided on the said support body and containing the resin composition in any one of Claims 1-13. The resin sheet according to claim 14, which is a resin sheet for an insulating layer of a semiconductor chip package. The circuit board containing the insulating layer formed with the hardened|cured material of the resin composition in any one of Claims 1-13. The semiconductor chip package in which the semiconductor chip was mounted on the circuit board of Claim 16. A semiconductor chip package comprising a semiconductor chip sealed with the resin composition according to any one of claims 1 to 13. A semiconductor chip package comprising a semiconductor chip sealed with the resin sheet according to claim 14 .

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