KR20180004014A - Resin compositions - Google Patents

Abstract

The present invention relates to a resin composition for obtaining an insulation layer with excellent reflow resistance, flame retardancy, and peel strength with a conductive layer; a resin sheet using the same, a circuit board, a semiconductor chip package, and a semiconductor device thereof. The resin composition includes: (a) a compound having one or more structure units selected from a group including (i) butadiene structure units which can be hydrogenated and (ii) biphenylene type phenol or naphthol aralkyl structure units; (b) an epoxy resin having two or more epoxy groups and one or more aromatic rings in a single molecule; and (c) a resin composition containing an inorganic filler. For 100 mass% of non-volatile components of a resin composition, 30 mass% or more of the inorganic filler is included.

Description

RESIN COMPOSITIONS [0001]

The present invention relates to a resin composition. The present invention also relates to a resin sheet, a circuit board, a semiconductor chip package, and a semiconductor device using the resin composition.

2. Description of the Related Art In recent years, there has been an increasing demand for small-sized, high-performance electronic devices such as smart phones and tablet devices, and accordingly, insulating materials (insulating layers) used in these small electronic devices are required to be further enhanced.

Such an insulating layer is known to be formed by curing a resin composition or the like (see, for example, Patent Document 1).

Japanese Laid-Open Patent Publication No. 2015-82535

In recent years, the electric and electronic industry has demanded a material having excellent flame retardancy without containing bromine and chlorine, and the insulating layer used in the above electronic equipment is required to have excellent flame retardancy even without containing bromine and chlorine. Further, the insulating layer is also required to have excellent peel strength and excellent reflow resistance.

Disclosure of the Invention The present invention has been made to solve the above-described problems, and provides a resin composition which can obtain an insulating layer excellent in flame retardancy, peel strength and reflow resistance from a conductor layer such as copper foil; A resin sheet using the same, a circuit substrate and a semiconductor chip package, and a semiconductor device.

The present inventors have found that (a) a compound having (a) a butadiene structural unit which may be (i) hydrogenated and (ii) at least one structural unit selected from the group consisting of a biphenylene type phenol structural unit and a naphthol aralkyl structural unit, (b) an epoxy resin having at least two epoxy groups and at least one aromatic ring in one molecule, and (c) an inorganic filler, wherein the content of the component (c) is 100 mass% , It is found that an insulating layer excellent in flame retardance, peel strength with a conductor layer and reflow resistance can be obtained, and the present invention has been accomplished.

That is, the present invention includes the following contents.

[1] A process for producing a compound represented by the general formula (1): (1) a process for preparing a compound represented by the general formula (1): (a) a compound having (i) a butadiene structural unit which may be hydrogenated,

(b) an epoxy resin having two or more epoxy groups and at least one aromatic ring in one molecule, and

(c) a resin composition containing an inorganic filler,

(d) the inorganic filler is 30 mass% or more when the nonvolatile component of the resin composition is 100 mass%.

[2] The epoxy resin composition according to [1], wherein the component (b) is an epoxy resin having at least two epoxy groups, at least one aromatic ring and fluorine atoms in one molecule; Bisphenol A type epoxy resin; Bisphenol F type epoxy resin; An epoxy resin having, in one molecule, at least two epoxy groups and at least one biphenyl structure; An epoxy resin having, in one molecule, at least two epoxy groups and at least one condensed ring; An epoxy resin having, in one molecule, at least two epoxy groups and at least one xylene structure; An epoxy resin having at least one glycidylamino group, at least one epoxy group and at least one aromatic ring in one molecule; An epoxy resin having, in one molecule, at least two epoxy groups, at least one aromatic ring and a dicyclopentadienyl structure; And an epoxy resin having at least two glycidyloxybenzene structures in one molecule. The resin composition according to [1], wherein the epoxy resin is at least one selected from the group consisting of an epoxy resin having at least two glycidyloxybenzene structures.

[3] The resin composition according to [1], wherein the component (b) is an epoxy resin having, in one molecule, at least two epoxy groups, at least one aromatic ring and a fluorine atom; An epoxy resin having, in one molecule, at least two epoxy groups and at least one biphenyl structure; An epoxy resin having, in one molecule, at least two epoxy groups and at least one condensed ring; An epoxy resin having, in one molecule, at least two epoxy groups and at least one xylene structure; The resin composition according to [1] or [2], wherein the resin composition is at least one selected from the group consisting of an epoxy resin having at least two epoxy groups, at least one aromatic ring and a dicyclopentadienyl structure in one molecule.

[4] The resin composition according to any one of [1] to [3], wherein the number average molecular weight of the component (a) is 1,000 to 20,000.

[5] The resin composition according to any one of [1] to [4], wherein the content of the component (a) is 3% by mass to 40% by mass based on 100% by mass of the nonvolatile component of the resin composition.

[6] The resin composition according to any one of [1] to [5], wherein the content of the component (b) is 2% by mass to 30% by mass based on 100% by mass of the nonvolatile component of the resin composition.

[7] The resin composition according to any one of [1] to [6], wherein the component (b) has an epoxy equivalent of 200 or more.

[8] The resin composition according to any one of [1] to [7], further comprising (d) a phenoxy resin.

[9] The resin composition according to [8], wherein the component (d) is a phenoxy resin comprising a bisphenol AF structure.

[10] The resin composition according to [8] or [9], wherein the content of the component (d) is 1% by mass to 20% by mass based on 100% by mass of the nonvolatile component of the resin composition.

[11] The resin composition according to any one of [1] to [10], further comprising (e) a curing agent.

[12] The resin composition according to any one of [1] to [11], further comprising (g) a flame retardant.

[13] The resin composition according to [12], wherein the content of the component (g) is 1% by mass to 20% by mass based on 100% by mass of the nonvolatile component of the resin composition.

[14] A resin sheet having a support and a resin composition layer containing the resin composition according to any one of [1] to [13], which is provided on the support.

[15] A resin sheet according to [14], which is a resin sheet for an insulating layer of a semiconductor chip package.

[16] A circuit board comprising an insulating layer formed by a cured product of the resin composition according to any one of [1] to [13]

[17] A semiconductor chip package on which a semiconductor chip is mounted on a circuit board according to [16].

[18] A semiconductor chip package comprising a resin composition according to any one of [1] to [13], or a semiconductor chip encapsulated with a resin sheet according to [14] or [15].

INDUSTRIAL APPLICABILITY According to the present invention, there can be provided a resin composition which can obtain an insulating layer excellent in flame retardance, peel strength with a conductor layer and reflow resistance; A resin sheet using the same, a circuit board, a semiconductor chip package, and a semiconductor device can be provided.

Fig. 1 is a schematic cross-sectional view showing an example of a process for manufacturing a circuit board according to the present invention, in which step (3) is a step of forming a via hole in an insulating layer and forming a conductor layer to interconnect layers of wiring.
Fig. 2 is a schematic cross-sectional view showing an example of a step in which the step (3) is a step of polishing or grinding the insulating layer to expose the wiring layer to interconnect the wiring layers.
3 is a schematic cross-sectional view showing an example of a semiconductor chip package (fan-out type WLP) of the present invention.

Hereinafter, the resin composition, the resin sheet, the circuit board, the semiconductor chip package, and the semiconductor device of the present invention will be described in detail.

[Resin composition]

The resin composition of the present invention comprises (a) at least one structural unit selected from the group consisting of (i) a butadiene structural unit which may be hydrogenated and (ii) a biphenylene type phenol structural unit and a naphthol aralkyl structural unit, (B) an epoxy resin having at least two epoxy groups and at least one aromatic ring in one molecule, and (c) an inorganic filler, wherein the inorganic filler (c) When it is 100% by mass, it is 30% by mass or more.

As a result of intensive studies, the present inventors have found that heat resistance and flame retardancy of an insulating layer obtained by curing a resin composition are improved by containing an epoxy resin having at least one aromatic ring. It has also been found that the compatibility of the component (a) with the resin composition is improved by adding the component (b) to the resin composition. (a) component at the interface between the insulating layer and the conductor layer in which the resin composition is cured by containing the component (b) in the resin composition to increase the compatibility of the component (a) It is considered that the peel strength and reflow resistance are improved because precipitation is suppressed.

The resin composition may contain (d) a phenoxy resin, (e) a curing agent, (f) a curing accelerator, and (g) a flame retardant, if necessary. Hereinafter, each component contained in the resin composition will be described in detail.

<Compounds having (a) a butadiene structural unit (i) which may be hydrogenated, and (ii) at least one structural unit selected from the group consisting of a biphenyl-type phenol structural unit and a naphthol aralkyl structural unit>

The resin composition contains (a) a compound having (i) a butadiene structural unit which may be hydrogenated, and (ii) at least one structural unit selected from the group consisting of a biphenylene type phenol structural unit and a naphthol aralkyl structural unit . By containing the component (a), film formability is excellent. (a) is a copolymer comprising (i) a structural unit and (ii) a structural unit, and is a block copolymer comprising (i) a structural unit and (ii) (Ii) a graft copolymer containing a structural unit (i) and a structural unit (ii), and the like. Examples of the component (a) include (i) Unit. Herein, the structural unit means a structure in which one or two hydrogen atoms are removed from the compound.

The number average molecular weight (Mn) of the component (a) is preferably from 1,000 to 20,000, more preferably from 2,000 to 15,000, and still more preferably from 2,500 to 10,000, from the viewpoint of improving compatibility with other components and physical properties of the cured product . The number average molecular weight (Mn) is the number average molecular weight in terms of polystyrene measured by GPC (gel permeation chromatography).

The component (a) preferably has a functional group capable of reacting with the component (b) described later. The functional group capable of reacting with the component (b) also includes a functional group represented by heating.

In a suitable embodiment, the functional group capable of reacting with the component (b) is at least one functional group selected from the group consisting of a carboxyl group, an acid anhydride group, an isocyanate group and a urethane group. Among them, as the functional group, an acid anhydride group and an isocyanate group are preferable.

(i) the constituent unit (ii) the constituent unit (i) the constituent unit / (ii) the constituent unit) contained in the component (a) Preferably from 0.2 to 10, more preferably from 0.4 to 8, and still more preferably from 0.8 to 5.

(i) The butadiene structural unit is a structural unit derived from a 1,3-butadiene monomer, and the butadiene structural unit may be partially or wholly hydrogenated. The butadiene structural unit may have a substituent.

Examples of the butadiene structural unit include a structural unit containing a hydrogenated polybutadiene skeleton, a butadiene structural unit containing a hydroxy group, a butadiene structural unit containing a carboxyl group, a butadiene structural unit containing an acid anhydride group, a butadiene structural unit containing an epoxy group A structural unit, a butadiene structural unit containing an isocyanate group, and a butadiene structural unit containing a urethane group, and a butadiene structural unit containing a hydroxy group is preferable.

The component (ii) is at least one structural unit selected from the group consisting of a biphenylene type phenol structural unit and a naphthol aralkyl structural unit. As the component (ii), it is preferable to use a biphenylene type phenol structural unit or a naphthol aralkyl structural unit alone.

The biphenylene type phenol structural unit is a structural unit having a biphenylene group and a phenol group. The biphenylene group and the phenol group may be bonded directly or may be bonded via a divalent linking group such as a methylene group. The phenol group is a divalent group derived from hydroxybenzene, and the hydroxybenzene is a concept including phenol, catechol, and hydroquinone.

The specific structure of the biphenylene type phenol structural unit is a structural unit represented by the following general formula (1).

[Chemical Formula 1]

In Formula 1,

m1 and n2 are each independently 0 or 1,

p1 is 1 or 2;

m1 and n1 each independently represent 0 or 1, and preferably represent 1, respectively. p1 represents 1 or 2, and preferably represents 1.

The naphthol aralkyl structural unit is a structural unit having a naphthol group and an aralkylene group. The naphthol group may be bonded to the alkylene moiety of the aralkylene group, may be bonded to the arylene moiety of the aralkylene group, May be bonded to each other via a divalent group such as a group. Examples of the aralkylene group include a benzylene group and the like. The naphthol group is a bivalent group derived from hydroxynaphthalene, and hydroxynaphthalene is a concept including naphthol and dihydroxynaphthalene.

The specific structure of the naphthol aralkyl structural unit is a structural unit represented by the following general formula (2).

(2)

In Formula 2,

m2 and n2 are each independently 0 or 1,

p2 is 1 or 2;

m2 and n2 each independently represent 0 or 1, and preferably represent 1, respectively. p2 represents 1 or 2, and preferably represents 1. The "(OH) _p2 " in the general formula (2) may be bonded to any part of the naphthalene condensed ring.

The component (a) may have other structural units other than the structural unit (i) and the structural unit (ii). The other structural unit is not particularly limited, but is preferably a structural unit derived from any monomer capable of copolymerizing (i) the structural unit and (ii) the structural unit. Examples of such monomers include diallylamine, dimethylallylamine, methoxycarbonylated allylamine, methylcarbonylated allylamine, urea allylamine, isophorone dicyanate, quaternary acid anhydride, and the like. have.

The method of synthesizing the component (a) is not particularly limited, and can be carried out by a known synthesis method. In a preferred embodiment, the component (a) is obtained by reacting (i) a butadiene resin as a raw material of the constituent unit with a diisocyanate compound, and then reacting the remaining isocyanate group with the raw material of the constituent unit (ii).

(i) a butadiene resin which is liquid at 25 占 폚 or has a glass transition temperature of 25 占 폚 or less is preferable as the butadiene resin to be a raw material of the constituent unit, and a hydrogenated polybutadiene skeleton-containing resin (e.g., a hydrogenated polybutadiene skeleton- At least one resin selected from the group consisting of a hydroxyl group-containing butadiene resin, a carboxyl group-containing butadiene resin, an acid anhydride group-containing butadiene resin, an epoxy group-containing butadiene resin, an isocyanate group-containing butadiene resin and a urethane group- The butadiene structure in the butadiene resin may be contained in the main chain or in the side chain. The butadiene structure may be partially or wholly hydrogenated. Here, the &quot; hydrogenated polybutadiene skeleton-containing resin &quot; refers to a resin in which at least a part of the polybutadiene skeleton is hydrogenated, and the polybutadiene skeleton does not necessarily have to be a completely hydrogenated resin.

The number average molecular weight (Mn) of the butadiene resin is preferably 1,000 to 100,000, more preferably 5,000 to 50,000, more preferably 7,500 to 30,000, and still more preferably 10,000 to 15,000. Here, the number average molecular weight (Mn) of the resin is the number average molecular weight in terms of polystyrene measured by GPC (gel permeation chromatography).

When the butadiene resin has a functional group, the functional group equivalent is preferably 100 to 10000, more preferably 200 to 5000. The functional group equivalent is the number of grams of the resin containing one gram equivalent of the functional group. For example, the epoxy equivalent weight can be measured according to JIS K7236. The hydroxyl equivalent can be calculated by dividing the molecular weight of KOH by the hydroxyl value measured in accordance with JIS K1557-1.

Specific examples of the butadiene resin include Ricon 657 (epoxy group-containing polybutadiene), Ricon 130MA8, Ricon 130MA13, Ricon 130MA20, Ricon 131MA5, Ricon 131MA10, JP-100 "," JP-200 "(epoxidized polybutadiene)," GQ-1000 "(hydroxyl group, GI-1000 "," G-2000 "," G-3000 "(both terminal hydroxyl groups polybutadiene)," GI-1000 " Terminal epoxy hydrogenated polybutadiene), "PB3600", "PB4700" (polybutadiene skeletal epoxy resin), "Epofriend A1005", "Epofriend A1010", "Epofriend A1020" (styrene and butadiene and styrene block , &Quot; FCA-061L &quot; manufactured by Nagase ChemteX Corporation (hydrogenated polybutadiene skeleton epoxy And the like can be resin), "R-45EPT" (polybutadiene skeleton epoxy resin).

(ii) MEH-7851 series such as &quot; MEH-7851SS &quot;, MEH-7851M manufactured by Meiwa Kasei Co., Ltd., and KAYAHARD GPH series manufactured by Nihon Kayaku Co., .

SN-475 &quot;, &quot; SN-485 &quot;, and &quot; SN-495V &quot; manufactured by Shinnitetsu Sumikin Kagaku Co., Ltd. may be mentioned as the naphthol aralkyl resin as a raw material of the constituent unit (ii).

The number average molecular weight (Mn) of the biphenylene type phenol resin and the naphthol aralkyl resin is preferably from 360 to 10000, more preferably from 380 to 5000, and still more preferably from 400 to 3000. Here, the number average molecular weight (Mn) of the resin is the number average molecular weight in terms of polystyrene measured by GPC (gel permeation chromatography).

The hydroxyl equivalent of the biphenylene type phenol resin and the naphthol aralkyl resin is preferably 100 to 1000, more preferably 200 to 500. The hydroxyl equivalent can be calculated by dividing the molecular weight of KOH by the hydroxyl value measured in accordance with JIS K1557-1.

The content of the component (a) in the resin composition is preferably 40% by mass or less, more preferably 35% by mass or less, based on 100% by mass of the nonvolatile component of the resin composition, from the viewpoint of improving reflow resistance , More preferably not more than 30 mass%, still more preferably not more than 25 mass%. The lower limit is preferably 3% by mass or more, more preferably 5% by mass or more, still more preferably 10% by mass or more, still more preferably 15% by mass or more.

<(b) Epoxy resin having at least two epoxy groups and at least one aromatic ring in one molecule>

The resin composition (b) contains, in one molecule, an epoxy resin having at least two epoxy groups and at least one aromatic ring. An aromatic ring is a concept including polycyclic aromatic and aromatic heterocyclic rings. By containing the component (b) in the resin composition, the compatibility of the component (a) is improved, and as a result, a resin composition excellent in the peel strength and reflow resistance of the conductor layer can be obtained.

(b) is an epoxy resin having at least two epoxy groups and at least one aromatic ring in a molecule and being in a liquid state at a temperature of 20 캜, and an epoxy resin having at least three epoxy groups and at least one aromatic ring in one molecule, It is preferable that the epoxy resin is one of solid epoxy resin. Among them, a solid epoxy resin is preferable from the viewpoint of improving the surface tackiness of the resin composition layer of the formed resin sheet (light tackiness is preferable in the lamination step to be described later) and heat resistance.

Specific examples of the component (b) include epoxy resins having at least two epoxy groups, at least one aromatic ring and fluorine atoms in one molecule, such as bisphenol AF type epoxy resin; Bisphenol F type epoxy resin; An epoxy resin having, in one molecule, at least two epoxy groups and at least one biphenyl structure; An epoxy resin having, in one molecule, at least two epoxy groups and at least one condensed ring; An epoxy resin having, in one molecule, at least two epoxy groups and at least one xylene structure; An epoxy resin having at least one glycidylamino group, at least one epoxy group and at least one aromatic ring in one molecule; An epoxy resin having, in one molecule, at least two epoxy groups, at least one aromatic ring and a dicyclopentadienyl structure; And an epoxy resin having at least two glycidyloxybenzene structures in one molecule, and an epoxy resin having at least two epoxy groups, at least one aromatic ring and fluorine atoms in one molecule; An epoxy resin having, in one molecule, at least two epoxy groups and at least one biphenyl structure; An epoxy resin having, in one molecule, at least two epoxy groups and at least one condensed ring; An epoxy resin having, in one molecule, at least two epoxy groups and at least one xylene structure; And an epoxy resin having at least two epoxy groups, at least one aromatic ring and a dicyclopentadienyl structure in one molecule, more preferably at least one epoxy group in the molecule, at least two epoxy groups, at least one aromatic ring, An epoxy resin having a fluorine atom; And an epoxy resin having at least two epoxy groups and at least one biphenyl structure in one molecule, and more preferably at least one selected from the group consisting of epoxy resins having at least two epoxy groups and at least one biphenyl structure.

Specific examples of the component (b) include "HP4032", "HP4032D", "HP4032SS", "HP4032H" (naphthalene type epoxy resin) manufactured by DIC, "828US", "jER828EL" JER806 "," jER807 "(bisphenol F type epoxy resin)," jER152 "(phenol novolak type epoxy resin)," 630 "," 630LSD "(glycidyl amine type epoxy resin) "ZX1059" (a mixture of bisphenol A type epoxy resin and bisphenol F type epoxy resin) manufactured by Tetsu Sumikin Kagaku Co., Ltd., "EX-721" (glycidyl ester type epoxy resin) manufactured by Nagase Chemtech Co., ZX1658 "," ZX1658GS "(liquid 1,4-glycidylcyclohexane)," HP-4700 "(trade name, manufactured by Shinnetsu Tsushimika Kagaku Co., HP-4710 "(naphthalene type tetrafunctional epoxy resin)," N-690 "(cresol novolak type epoxy resin)," N HP-7200H "," HP-7200H "," HP-7200HHH "(dicyclopentadiene type epoxy resin)" HP-7295 "(cresol novolak type epoxy resin) EXA7311-G4 "," EXA7311-G4S "," HP6000 "(naphthylene ether type epoxy resin)" EPPN-502H "(naphthylene ether type epoxy resin) manufactured by Nihon Kayaku Co., NC3000L "," NC3100 "(biphenyl type epoxy resin)," ESN475V "manufactured by Shinnitetsu Sumikin Kagaku Co., Ltd. (" Resin ")," NC7000L " (Naphthol type epoxy resin), "ESN485" (naphthol novolak type epoxy resin), "YX4000H", "YL6121" (biphenyl type epoxy resin), "YX4000HK" "YL7760" (bisphenol AF type epoxy resin), "YX8800" (anthracene type epoxy resin), "PG-100" and "CG-500" manufactured by Osaka Gas Chemical Co., "JER1010" (solid bisphenol A type epoxy resin), "jER1031S" (tetraphenyl ethane type epoxy resin), "157S70" (bisphenol novolak type epoxy resin manufactured by Mitsubishi Chemical Corporation), "YL7800" (fluorene type epoxy resin) YX4000HK (biquilene type epoxy resin), YX8800 (anthracene type epoxy resin) manufactured by Mitsubishi Chemical Corporation, PG-100 and CG-500 manufactured by Osaka Gas Chemical Co., "YL7800" (fluorene type epoxy resin) manufactured by Kakusa KK, "jER1031S" (tetraphenyl ethane type epoxy resin) manufactured by Mitsubishi Chemical Corporation, "YX7700" (xylene structure containing epoxy resin) manufactured by Mitsubishi Chemical Corporation . These may be used singly or in combination of two or more kinds.

The content of the component (b) is preferably not less than 2% by mass, more preferably not less than 3% by mass, and more preferably not less than 3% by mass, based on 100% by mass of the nonvolatile component in the resin composition, from the viewpoint of improving reflow resistance. By mass is not less than 5% by mass. The upper limit is not particularly limited insofar as the effects of the present invention are exhibited, but is preferably 30 mass% or less, more preferably 25 mass% or less, further preferably 20 mass% or less.

The epoxy equivalent of the component (b) is preferably 200 or more, more preferably 300 or more, and still more preferably 400 or more. The upper limit is not particularly limited, but is preferably 3000 or less, more preferably 2000 or less, still more preferably 1000 or less. With this range, the cross-linking density of the cured product becomes sufficient, and an insulating layer having a small surface roughness may result. The epoxy equivalent can be measured in accordance with JIS K7236, and is the mass of the resin containing one equivalent of an epoxy group.

The weight average molecular weight of the component (b) is preferably 100 to 5000, more preferably 250 to 3000, and still more preferably 400 to 1500. Here, the weight average molecular weight of the component (b) is a weight average molecular weight in terms of polystyrene measured by a gel permeation chromatography (GPC) method, and can be measured in the same manner as the weight average molecular weight of the component (d) .

By containing the component (b), the resin composition of the present invention improves the compatibility of the component (a) with the resin composition. As a result, the resin composition of the present invention exhibits excellent film formability. Evaluation of the film formability can be carried out according to the method described in &quot; Evaluation of film formability of film &quot;

<(c) inorganic filler>

The resin composition contains (c) an inorganic filler. The material of the inorganic filler is not particularly limited and may be, for example, silica, alumina, glass, cordierite, silicon oxide, barium sulfate, barium carbonate, talc, clay, mica powder, zinc oxide, hydrotalcite, Aluminum hydroxide, aluminum hydroxide, magnesium hydroxide, magnesium carbonate, magnesium oxide, boron nitride, aluminum nitride, manganese nitride, aluminum borate, strontium carbonate, strontium titanate, calcium titanate, magnesium titanate, bismuth titanate, titanium oxide, zirconium oxide, , Barium titanate zirconate, barium zirconate, calcium zirconate, zirconium phosphate, and zirconium tungstate phosphate. Of these, silica is particularly suitable. As the silica, spherical silica is preferable. The inorganic fillers may be used singly or in combination of two or more kinds.

The average particle diameter of the inorganic filler is preferably 5 占 퐉 or less, more preferably 2.5 占 퐉 or less, still more preferably 2.2 占 퐉 or less, in view of obtaining an insulating layer having a low surface roughness by improving circuit embedding property Preferably 2 mu m or less. The lower limit of the average particle diameter is not particularly limited, but is preferably 0.01 占 퐉 or more, more preferably 0.05 占 퐉 or more, and even more preferably 0.1 占 퐉 or more. Examples of commercially available inorganic fillers having such average particle diameter include "YC100C", "YA050C", "YA050C-MJE", "YA010C" manufactured by Adomex Corporation, "UFP-30" manufactured by Denki Kagaku Kogyo Co., SO-C4 "and" SO-C4 "manufactured by Adomex Co., Ltd.," SO-C6 "," SO- C2 &quot;, &quot; SO-C1 &quot;, and the like.

The average particle diameter of the inorganic filler can be measured by a laser diffraction / scattering method based on the Mie scattering theory. Specifically, the particle size distribution of the inorganic filler can be measured with a laser diffraction scattering type particle size distribution measuring apparatus, and the median diameter is determined as the average particle diameter. The measurement sample can be preferably those in which an inorganic filler is dispersed in water by ultrasonic waves. As the laser diffraction scattering type particle size distribution measuring apparatus, "LA-500" manufactured by Horiba Seisakusho Co., Ltd. and the like can be used.

From the viewpoint of improving moisture resistance and dispersibility, the inorganic filler is preferably selected from the group consisting of an amino silane coupling agent, an epoxy silane coupling agent, a mercaptosilane coupling agent, a silane coupling agent, an alkoxysilane compound, an organosilazane compound, It is preferable that the surface treatment agent is treated with at least one kind of surface treatment agent, Examples of commercial products of surface treatment agents include KBM403 (3-glycidoxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd., KBM803 (3-mercaptopropyltrimethoxy silane manufactured by Shin- Silane), KBE903 (3-aminopropyltriethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd., KBM573 (N-phenyl-3-aminopropyltrimethoxysilane) manufactured by Shin- KBM103 "(phenyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd., KBM-4803" manufactured by Shin-Etsu Chemical Co., Ltd. (long-chain epoxy type silane couple LINGER) and the like.

The degree of the surface treatment by the surface treatment agent can be evaluated by the amount of carbon per unit surface area of the inorganic filler. The amount of carbon per unit surface area of the inorganic filler is preferably 0.02 mg / m 2 or more, more preferably 0.1 mg / m 2 or more, and still more preferably 0.2 mg / m 2 or more from the viewpoint of improving the dispersibility of the inorganic filler. On the other hand, it is preferably 1 mg / m 2 or less, more preferably 0.8 mg / m 2 or less, still more preferably 0.5 mg / m 2 or less from the viewpoint of preventing the melt viscosity of the resin varnish or the melt viscosity in the sheet form from rising .

The amount of carbon per unit surface area of the inorganic filler can be measured after the surface-treated inorganic filler is washed with a solvent (for example, methyl ethyl ketone (MEK)). Specifically, a sufficient amount of MEK as a solvent is added to the inorganic filler surface-treated with a surface treatment agent and ultrasonically cleaned at 25 占 폚 for 5 minutes. After the supernatant is removed and the solid content is dried, the amount of carbon per unit surface area of the inorganic filler can be measured using a carbon analyzer. As the carbon analyzer, "EMIA-320V" manufactured by Horiba Seisakusho Co., Ltd. and the like can be used.

The content of the inorganic filler in the resin composition is 30% by mass or more, preferably 35% by mass or more, and more preferably 40% by mass or more from the viewpoint of obtaining an insulating layer having excellent reflow resistance and a low coefficient of thermal expansion. The upper limit is preferably 95% by mass or less, more preferably 90% by mass or less, still more preferably 85% by mass or less, still more preferably 80% by mass or less, from the viewpoint of mechanical strength of the insulating layer, to be.

< (d) Phenoxy resin >

The resin composition of the present invention may contain (d) a phenoxy resin.

The weight average molecular weight of the component (d) in terms of polystyrene is preferably in the range of 8,000 to 70,000, more preferably in the range of 10,000 to 60,000, and still more preferably in the range of 20,000 to 60,000. The weight average molecular weight of the component (d) in terms of polystyrene is measured by gel permeation chromatography (GPC). Specifically, the weight average molecular weight of the component (d) in terms of polystyrene was measured using LC-9A / RII-6A manufactured by Shimadzu Corporation as a measuring device and Shodex K-800P / K-804L / K-804L as a mobile phase, chloroform at a column temperature of 40 占 폚, and using a calibration curve of standard polystyrene.

Examples of the phenoxy resin include a bisphenol AF structure, a bisphenol A structure, a bisphenol F structure, a bisphenol S structure, a bisphenol acetophenone structure, a novolac structure, a biphenyl structure, a fluorene structure, a dicyclopentadiene structure, A phenanthrene resin having at least one structure selected from the group consisting of a naphthalene structure, a naphthalene structure, an anthracene structure, an adamantane structure, a terpene structure, and a trimethyl cyclohexane structure, a biquisylenol structure, and a bisphenol fluorene structure And is preferably a phenoxy resin having at least one structure selected from the group consisting of a bisphenol AF structure, a bicycylenol structure and a bisphenol fluorene structure, more preferably a phenoxy resin containing a bisphenol AF structure Do. The terminal of the phenoxy resin may be any functional group such as a phenolic hydroxyl group or an epoxy group. The phenoxy resin may be used singly or in combination of two or more kinds.

Specific examples of the phenoxy resin include "1256" and "4250" (both phenol resins having a bisphenol A structure), "YX8100" (phenoxy resin containing a bisphenol S skeleton), and "YX6954" Phenoxy resin containing an acetophenone skeleton). In addition, "FX280" and "FX293" manufactured by Shin Nitetsu Sumikin Kagaku Co., Ltd., "YX6954BH30", "YX7553BH30", "YL7769BH30" YL6794 "," YL7213 "," YL7290 "," YL7891BH30 ", and" YL7482 ".

When the resin composition contains the component (d), the content of the component (d) is preferably 1% by mass to 20% by mass, more preferably 3% by mass, By mass to 18% by mass, and more preferably 5% by mass to 15% by mass.

<(e) Curing agent>

The resin composition may contain (e) a curing agent. The curing agent is not particularly limited as long as it has a function of curing a resin such as the component (b), and examples thereof include phenol-based curing agents, naphthol-based curing agents, active ester- based curing agents, benzoxazine based curing agents, cyanate ester- And carbodiimide-based curing agents. The curing agent may be used singly or in combination of two or more kinds. The component (e) is preferably at least one selected from the group consisting of a phenol-based curing agent, a naphthol-based curing agent, an active ester-based curing agent and a cyanate ester-based curing agent, and at least one selected from phenolic curing agents and active ester- More preferable.

As the phenol-based curing agent and naphthol-based curing agent, a phenol-based curing agent having a novolak structure or a naphthol-based curing agent having a novolak structure is preferable from the viewpoints of heat resistance and water resistance. From the viewpoint of adhesion with the conductor layer, a nitrogen-containing phenol-based curing agent is preferable, and a phenazine-based curing agent containing a triazine skeleton is more preferable. Of these, a phenazine novolac curing agent containing a triazine skeleton is preferable from the viewpoint of highly satisfying heat resistance, water resistance, and adhesiveness to a conductor layer.

Specific examples of the phenol-based curing agent and naphthol-based curing agent include MEH-7700, MEH-7810 and MEH-7851 manufactured by Meiwa Chemical Industries, Ltd., NHN, CBN and GPH &Quot; SN-375 &quot;, &quot; SN-375 &quot;, &quot; SN- LA-7054 "," LA-1356 "," LA-3018-50P "," EXB-9500 "," KA-1165 "," KA-1165 "and" GDP-6115H "manufactured by Igagaku Co., Ltd., and the like.

From the viewpoint of obtaining an insulating layer having excellent adhesion with a conductor layer, an active ester-based curing agent is also preferable. The active ester-based curing agent is not particularly limited, but generally includes ester groups having high reactivity such as phenol esters, thiophenol esters, N-hydroxyamine esters, and esters of heterocyclic hydroxy compounds, Are preferably used. The active ester-based curing agent is preferably obtained by a condensation reaction of a carboxylic acid compound and / or a thiocarboxylic acid compound with a hydroxy compound and / or a thiol compound. From the viewpoint of heat resistance improvement, an active ester type curing agent obtained from a carboxylic acid compound and a hydroxy compound is preferable, and an active ester type curing agent obtained from a carboxylic acid compound and a hydroxy compound and / or a naphthol compound is more preferable. Examples of the carboxylic acid compound include benzoic acid, acetic acid, succinic acid, maleic acid, itaconic acid, phthalic acid, isophthalic acid, terephthalic acid, pyromellitic acid and the like. Examples of the phenol compound or naphthol compound include hydroquinone, resorcin, bisphenol A, bisphenol F, bisphenol S, phenolphthalein, methylated bisphenol A, methylated bisphenol F, methylated bisphenol S, phenol, o- Cresol, catechol, alpha -naphthol, beta -naphthol, 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 2,6-dihydroxynaphthalene, dihydroxybenzophenone, Trihydroxybenzophenone, tetrahydroxybenzophenone, fluoroglucine, benzene triol, dicyclopentadiene type diphenol compounds, phenol novolak, and the like. Here, the "dicyclopentadiene type diphenol compound" refers to a diphenol compound obtained by condensing two molecules of phenol in one dicyclopentadiene molecule.

Specifically, there can be mentioned an active ester compound containing a dicyclopentadiene type diphenol structure, an active ester compound containing a naphthalene structure, an active ester compound containing an acetylated product of phenol novolac, an ester compound containing a phenol novolak benzoylate Of these, active ester compounds containing a naphthalene structure and active ester compounds containing a dicyclopentadiene-type diphenol structure are more preferred. The "dicyclopentadiene type diphenol structure" refers to a divalent structural unit comprising phenylene-dicyclopentylene-phenylene.

EXB9451 "," EXB9460 "," EXB9460S "," HPC-8000-65T "," HPC-8000H-65TM ", and the like are available as commercial products of the active ester- EXB9416-70BK "(manufactured by DIC) as an active ester compound containing a naphthalene structure," DC808 "as an active ester compound containing an acetylenic compound of phenol novolac," EXB-8000L-65TM " YLH1026 &quot; (manufactured by Mitsubishi Chemical Corp.) as an active ester compound containing a benzoylate of phenol novolac, &quot; DC808 &quot; (manufactured by Mitsubishi Chemical Corporation) as an acetylated product of phenol novolak, YLH1026 &quot; (manufactured by Mitsubishi Chemical Corp.), &quot; YLH1030 &quot; (manufactured by Mitsubishi Chemical Corp.), and YLH1048 (manufactured by Mitsubishi Chemical Corporation) as benzoylates of phenol novolak, Etc The can.

Specific examples of the benzoxazine-based curing agent include "HFB2006M" manufactured by Showa Kokohoshi Co., Ltd., "P-d" manufactured by Shikoku Chemicals, and "F-a".

Examples of the cyanate ester curing agent include bisphenol A dicyanate, polyphenol cyanate, oligo (3-methylene-1,5-phenylene cyanate), 4,4'- Dimethylphenyl cyanate), 4,4'-ethylidenediphenyl dicyanate, hexafluorobisphenol A dicyanate, 2,2-bis (4-cyanate) phenylpropane, 1,1- Cyanate phenylmethane), bis (4-cyanate-3,5-dimethylphenyl) methane, 1,3-bis Bifunctional cyanate resins derived from phenolic novolacs and cresol novolacs such as bis (4-cyanophenyl) thioether and bis (4-cyanate phenyl) ether, and polyfunctional cyanate resins derived from these cyanate resins, And prepolymers. Specific examples of the cyanate ester-based curing agent include "PT30" and "PT60" (all phenol novolak-type multifunctional cyanate ester resins), "BA230", "BA230S75" (part of bisphenol A dicyanate Or a prepolymer in which all of the triazine is trimerized to form a trimer).

Specific examples of the carbodiimide-based curing agent include "V-03" and "V-07" manufactured by Nissui Chemical Industries, Ltd.

In the case where the resin composition contains component (e), the content of the curing agent in the resin composition is not particularly limited, but is preferably 10% by mass or less, more preferably 10% by mass or less when the nonvolatile component of the resin composition is 100% 8% by mass or less, and more preferably 5% by mass or less. The lower limit is not particularly limited, but is preferably 1% by mass or more.

<(f) Curing accelerator>

The resin composition may contain (f) a curing accelerator. Examples of the curing accelerator include phosphorus hardening accelerators, amine hardening accelerators, imidazole hardening accelerators, guanidine hardening accelerators and metal hardening accelerators. Phosphorus hardening accelerators, amine hardening accelerators, imidazole hardening accelerators, Accelerators and metal curing accelerators are preferable, and amine curing accelerators, imidazole curing accelerators and metal curing accelerators are more preferable. The curing accelerator may be used singly or in combination of two or more kinds.

Examples of the phosphorus hardening accelerator include triphenylphosphine, phosphonium phosphate compounds, tetraphenylphosphonium tetraphenylborate, n-butylphosphonium tetraphenylborate, tetrabutylphosphonium decanoate, (4-methylphenyl) tri Phenylphosphonium thiocyanate, tetraphenylphosphonium thiocyanate, butyltriphenylphosphonium thiocyanate, and the like, and triphenylphosphine and tetrabutylphosphonium decanoate are preferable.

Examples of the amine-based curing accelerator include trialkylamines such as triethylamine and tributylamine, 4-dimethylaminopyridine, benzyldimethylamine, 2,4,6-tris (dimethylaminomethyl) -Diazabicyclo (5,4,0) undecene, and 4-dimethylaminopyridine and 1,8-diazabicyclo (5,4,0) -undecene are preferred.

Examples of the imidazole-based curing accelerator include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, Imidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl- Benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl- 4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazolium trimellitate, 1-cyanoethyl- Trimellitate, 2,4-diamino-6- [2'-methylimidazolyl- (1 ')] -ethyl-s-triazine, 2,4- diamino-6- [ Imidazolyl- (1 ')] - ethyl-s-triazine, 2,4-diamino-6- [2'-ethyl-4'-methylimidazolyl- Triazine, 2,4-diamino-6- [2'-methylimidazolyl- (1 ')] - ethyl- , 2-phenylimidazole isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,3- Dihydro-1H-pyrrolo [1,2-a] benzimidazole, 1-dodecyl-2-methyl-3-benzylimidazolium chloride, 2-methylimidazoline and 2-phenylimidazoline An imidazole compound, and an adduct of an imidazole compound and an epoxy resin, and 2-ethyl-4-methylimidazole and 1-benzyl-2-phenylimidazole are preferable.

As the imidazole-based curing accelerator, a commercially available product may be used, and for example, &quot; P200-H50 &quot; manufactured by Mitsubishi Chemical Corporation may be mentioned.

Examples of the guanidine curing accelerator include dicyandiamide, 1-methylguanidine, 1-ethylguanidine, 1-cyclohexylguanidine, 1-phenylguanidine, 1- (o-tolyl) guanidine, dimethylguanidine, , Trimethylguanidine, tetramethylguanidine, pentamethylguanidine, 1,5,7-triazabicyclo [4.4.0] deca-5-ene, 7-methyl-1,5,7-triazabicyclo [ 1-n-butylbiguanide, 1-n-octadecylbiguanide, 1,1-dimethylbiguanide, 1, 1-cyclohexylbiguanide, 1-allylbiguanide, 1-phenylbiguanide, 1- (o-tolyl) biguanide, and the like, and dicyandiamide, 1,5,7-triazabicyclo [4.4.0] deca-5-ene is preferred.

Examples of the metal-based curing accelerator include organic metal complexes or organic metal salts of metals such as cobalt, copper, zinc, iron, nickel, manganese and tin. Specific examples of the organometallic complexes include organic cobalt complexes such as cobalt (II) acetylacetonate and cobalt (III) acetylacetonate, organic copper complexes such as copper (II) acetylacetonate, zinc An organic iron complex such as an organic zinc complex and iron (III) acetylacetonate, an organic nickel complex such as nickel (II) acetylacetonate, and an organic manganese complex such as manganese (II) acetylacetonate. Examples of the organic metal salt include zinc octylate, tin octylate, zinc naphthenate, cobalt naphthenate, tin stearate and zinc stearate.

In the case where the resin composition contains the component (f), the content of the curing accelerator in the resin composition is not particularly limited, but is preferably 0.01% by mass to 3% by mass when the nonvolatile component of the resin composition is 100% , More preferably 0.03 mass% to 2 mass%, and still more preferably 0.05 mass% to 1 mass%.

<(g) Flame Retardant>

The resin composition may contain (g) a flame retardant. Examples of the flame retardant include an organic phosphorus flame retardant, an organic nitrogen-containing phosphorus compound, a nitrogen compound, a silicon-based flame retardant, a metal hydroxide, and the like. The flame retardant may be used alone, or two or more flame retardants may be used in combination.

As the flame retardant, a commercially available product may be used, for example, "HCA-HQ" manufactured by Sanko Co., Ltd. and "PX-200" manufactured by Daihachi Kagaku Kogyo Co.,

When the resin composition contains a flame retardant, the content of the flame retardant is not particularly limited, but it is preferably 1% by mass to 20% by mass, more preferably 1.5% by mass, By mass to 15% by mass, and more preferably 2% by mass to 10% by mass.

< (h) Optional additives >

The resin composition may further contain other additives as required. Examples of such other additives include organic metal compounds such as organic copper compounds, organic zinc compounds and organic cobalt compounds, and binders, thickeners, defoaming agents , Leveling agents, adhesion-imparting agents, and resin additives such as coloring agents.

The resin composition of the present invention may lead to an insulating layer having excellent flame retardancy, peel strength with copper foil, and reflow resistance at the time of manufacturing a printed wiring board and a semiconductor package. Accordingly, the resin composition of the present invention is a resin composition for forming an insulating layer of a semiconductor chip package (a resin composition for an insulating layer of a semiconductor chip package), a resin composition for forming an insulating layer of a circuit board (including a printed wiring board) (Resin composition for an insulating layer of a circuit board), and a resin composition for forming an interlayer insulating layer on which a conductor layer is formed by plating (a resin for an interlayer insulating layer of a circuit board on which a conductor layer is formed by plating Composition) of the present invention.

Further, it can be suitably used as a resin composition (a resin composition for encapsulating a semiconductor chip) for encapsulating a semiconductor chip and a resin composition (a resin composition for forming a semiconductor chip wiring) for forming a wiring in a semiconductor chip.

[Resin sheet]

The resin sheet of the present invention comprises a support and a resin composition layer bonded to the support, wherein the resin composition layer comprises the resin composition of the present invention.

The thickness of the resin composition layer is preferably 100 占 퐉 or less, more preferably 80 占 퐉 or less, further preferably 60 占 퐉 or less, particularly preferably 50 占 퐉 or less, from the viewpoint of thinning. The lower limit of the thickness of the resin composition layer is not particularly limited, but may be usually 1 占 퐉 or more, 5 占 퐉 or more, 10 占 퐉 or more, or the like.

As the support, for example, a film made of a plastic material, a metal foil and a release paper can be mentioned, and a film or a metal foil made of a plastic material is preferable.

When a film made of a plastic material is used as the support, examples of the plastic material include polyethylene terephthalate (hereinafter may be abbreviated as "PET"), polyethylene naphthalate (hereinafter abbreviated as "PEN" (TAC), polyether sulfide (PES), and the like, such as polyester, polycarbonate (hereinafter sometimes abbreviated as "PC") and polymethyl methacrylate (PMMA) , Polyether ketone, polyimide, and the like. Of these, polyethylene terephthalate and polyethylene naphthalate are preferable, and inexpensive polyethylene terephthalate is particularly preferable.

In the case of using a metal foil as a support, examples of the metal foil include copper foil and aluminum foil, and copper foil is preferable. As the copper foil, a foil made of a single metal of copper may be used, or a foil made of an alloy of copper and another metal (for example, tin, chromium, silver, magnesium, nickel, zirconium, It is also good.

The support may be subjected to a mat treatment or a corona treatment on the surface to be bonded with the resin composition layer.

As the support, a support having a release layer having a release layer on the surface to be bonded to the resin composition layer may be used. Examples of the release agent used for the release layer of the release layer-adhered support include at least one release agent selected from the group consisting of an alkyd resin, a polyolefin resin, a urethane resin, and a silicone resin. SK-1, &quot; &quot; AL-5, &quot; and &quot; AL-5 &quot; manufactured by Rin Tec Corporation, each of which is a PET film having a releasing layer mainly composed of an alkyd resin-based releasing agent, -7 "manufactured by Toray Industries, Inc. and" Lumirra-T6AM "manufactured by Toray Industries Inc.

The thickness of the support is not particularly limited, but is preferably in the range of 5 탆 to 75 탆, more preferably in the range of 10 탆 to 60 탆. When a release layer-adhered support is used, it is preferable that the thickness of the entirety of the release layer-adhered support is in the above range.

The resin sheet can be produced, for example, by preparing a resin varnish obtained by dissolving a resin composition in an organic solvent, coating the resin varnish on a support using a die coater or the like, and drying the resin varnish again to form a resin composition layer .

Examples of the organic solvent include ketones such as acetone, methyl ethyl ketone (MEK) and cyclohexanone, acetic acid esters such as ethyl acetate, butyl acetate, cellosolve acetate, propylene glycol monomethyl ether acetate and carbitol acetate, Carbitol such as cellosolve and butyl carbitol, aromatic hydrocarbons such as toluene and xylene, and amide solvents such as dimethylformamide, dimethylacetamide (DMAc) and N-methylpyrrolidone. The organic solvent may be used singly or in combination of two or more kinds.

Drying may be carried out by a known method such as heating, hot air blowing, or the like. The drying conditions are not particularly limited, but the drying is carried out so that the content of the organic solvent in the resin composition layer is 10 mass% or less, preferably 5 mass% or less. When a resin varnish containing, for example, 30% by mass to 60% by mass of an organic solvent is used, it is dried at 50 ° C to 150 ° C for 3 minutes to 10 minutes, A resin composition layer can be formed.

In the resin sheet, a protective film according to the support may be further laminated on the surface of the resin composition layer not bonded to the support (i.e., the surface opposite to the support). The thickness of the protective film is not particularly limited, but is, for example, 1 m to 40 m. By laminating a protective film, it is possible to prevent adhesion and scratching of dust or the like to the surface of the resin composition layer. The resin sheet can be rolled up and stored. When the resin sheet has a protective film, it can be used by peeling the protective film.

Instead of the resin sheet of the present invention, a prepreg formed by impregnating a sheet-like fiber substrate with the resin composition of the present invention may be used.

The sheet-like fibrous substrate used in the prepreg is not particularly limited, and those commonly used as prepreg substrates such as glass cloth, aramid nonwoven fabric, and liquid crystal polymer nonwoven fabric can be used. From the viewpoint of thinning, the thickness of the sheet-like fiber base material is preferably 900 占 퐉 or less, more preferably 800 占 퐉 or less, further preferably 700 占 퐉 or less, still more preferably 600 占 퐉 or less. Particularly, in the present invention, the plating creep depth can be suppressed to a small value, and therefore, it is preferably 30 탆 or less, more preferably 20 탆 or less, and further preferably 10 탆 or less. The lower limit of the thickness of the sheet-like fibrous base material is not particularly limited, but may be usually 1 占 퐉 or more, 1.5 占 퐉 or more, 2 占 퐉 or more, or the like.

The prepreg can be produced by a known method such as a hot melt method or a solvent method.

The thickness of the prepreg can be the same as that of the resin composition layer in the above resin sheet.

The minimum melt viscosity of the resin composition layer (or resin composition) in the resin sheet of the present invention is preferably 500 poise or more, more preferably 1000 poise or more from the viewpoint of maintaining the thickness stably even if the resin composition layer is thin , And more preferably 1500 poise or more. The upper limit of the lowest melt viscosity is preferably 10000 poise or less, more preferably 8000 poise or less, still more preferably 6500 poise or less, 5000 poise or less, or 4000 poise or less, from the viewpoint of obtaining good part embeddability.

The lowest melt viscosity of the resin composition layer means the lowest viscosity exhibited by the resin composition layer when the resin of the resin composition layer is melted. Specifically, when the resin composition is heated by heating at a constant heating rate to melt the resin, the melt viscosity of the resin is lowered with the temperature rise in the initial stage, and thereafter the melt viscosity increases with the temperature rise. The lowest melt viscosity refers to the melt viscosity of such a minimum point. The lowest melt viscosity of the resin composition layer can be measured by a dynamic viscoelasticity method, and can be measured, for example, by the method described in &quot; Measurement of Minimum Melting Viscosity &quot;

The insulating layer formed by using the resin composition layer (or the resin composition) in the resin sheet of the present invention exhibits the property that the peel strength (copper foil strength) with the conductor layer is excellent. The fill strength is preferably 0.4 kgf / cm or more, more preferably 0.5 kgf / cm or more, and further preferably 0.6 kgf / cm or more. On the other hand, the upper limit value of the peel strength is not particularly limited, but may be 1.2 kgf / cm or less, 1 kgf / cm or less, and the like. The evaluation of the copper foil strength can be performed according to the method described in &quot; Measurement of adhesion strength (copper foil fill strength) to copper foil to be described later and evaluation of reflow resistance &quot;.

The insulating layer formed by using the resin composition layer (or the resin composition) in the resin sheet of the present invention exhibits excellent reflow resistance. Even if the insulating layer formed using the resin composition layer (or the resin composition) in the resin sheet of the present invention is passed through the reflow apparatus for reproducing the solder reflow temperature at a peak temperature of 260 DEG C three times or more, . The evaluation of the reflow resistance can be carried out according to the method described in &quot; Measurement of adhesion strength (copper foil strength) to copper foil to be described later and evaluation of reflow resistance &quot;.

The insulating layer formed by using the resin composition layer (or resin composition) in the resin sheet of the present invention exhibits excellent flame retardancy. It is preferable that the flame retardancy is superior to "V1", "V0" or UL in the UL flammability test standard (UL-94). The evaluation of the flame retardancy can be carried out according to the method described in &quot; evaluation of flame retardancy &quot;

The resin sheet of the present invention can be suitably used for forming an insulating layer in the production of a semiconductor chip package (a resin sheet for insulation of a semiconductor chip package).

For example, the resin sheet of the present invention can be suitably used (resin sheet for an insulating layer of a circuit board) to form an insulating layer of a circuit board, and an interlayer insulating layer in which a conductor layer is formed by plating is formed thereon (For the interlayer insulating layer of the circuit board on which the conductor layer is formed by plating). Examples of packages using such a substrate include FC-CSP, MIS-BGA package, and ETS-BGA package.

The resin sheet of the present invention can be suitably used for sealing a semiconductor chip (a resin sheet for sealing a semiconductor chip) or for forming a wiring in a semiconductor chip (a resin sheet for forming a semiconductor chip wiring) It can be suitably used for fan-out type wafer level package (WLP), fan-in type WLP, fan-out type PLP (panel level package), and fan-in type PLP. In addition, it can be suitably used for MUF (Molding Under Filling) material used after the semiconductor chip is connected to the substrate.

The resin sheet of the present invention can also be suitably used for forming an insulating layer of a circuit board such as a printed wiring board in a wide variety of applications requiring high insulation reliability.

[Circuit board]

The circuit board of the present invention includes an insulating layer formed by a cured product of the resin composition of the present invention.

A method of manufacturing a circuit board of the present invention, as shown in an example in Figs. 1 and 2,

(1) a step of preparing a substrate having a wiring layer having a substrate and a wiring board provided on at least one side of the substrate,

(2) a step of laminating the resin sheet of the present invention on a substrate with a wiring layer so that the wiring layer is embedded in the resin composition layer, and thermally curing the resin sheet to form an insulating layer;

(3) connecting the interconnection layers to each other. In addition, the method of manufacturing the circuit board may include (4) a step of removing the substrate.

The step (3) is not particularly limited as long as the interconnection layers can be interlayer-connected. However, the step (3) may be a step of forming a via hole in the insulating layer to form a conductor layer, and a step of polishing or grinding the insulating layer and exposing the interconnection layer .

&Lt; Process (1) >

Step (1) is a step of preparing a base material and a wiring layer-attached base material having a wiring layer provided on at least one side of the base material. As shown in Fig. 1 (A) and Fig. 2 (A), the wiring layer-attached substrate 10 has a first metal layer 12 as a part of the base material 11, And a wiring layer 14 on the surface of the second metal layer 13 opposite to the surface on the substrate 11 side. More specifically, a dry film (photosensitive resist film) is laminated on a substrate, and exposed and developed under a predetermined condition using a photomask to form a patterned dry film. Using the developed pattern dry film as a plating mask, an interconnection layer is formed by an electrolytic plating method, and then the pattern dry film is peeled off. 1 and 2, the first metal layer 12 and the second metal layer 13 are provided. However, the first metal layer 12 and the second metal layer 13 may not be provided.

Examples of the substrate include substrates such as a glass epoxy substrate, a metal substrate (such as stainless steel or cold rolled steel sheet (SPCC)), a polyester substrate, a polyimide substrate, a BT resin substrate and a thermosetting polyphenylene ether substrate And a metal layer such as a copper foil may be formed on the surface of the substrate. 1 (A) and Fig. 2 (A), a first metal layer 12 and a second metal layer 13 (for example, a carrier copper A thin metal foil with a thin foil, a trade name &quot; Micro Thin &quot;) may be formed.

The dry film is not particularly limited as long as it is a photosensitive dry film made of a photoresist composition. For example, a dry film such as novolak resin or acrylic resin can be used. A commercially available dry film may be used.

The conditions for laminating the substrate and the dry film are the same as those in the case of laminating the resin sheet of the step (2) described below to be embedded in the wiring layer, and the preferable range is also the same.

After the dry film is laminated on the substrate, exposure and development are performed under a predetermined condition using a photomask to form a desired pattern on the dry film.

The ratio of the line (circuit width) / space (width between circuits) of the wiring layer is not particularly limited, but is preferably 20/20 m or less (i.e., pitch is 40 m or less), more preferably 10 / 5 mu m or less, still more preferably 1/1 mu m or less, particularly preferably 0.5 / 0.5 mu m or less. The pitch does not have to be the same throughout the wiring layer. The minimum pitch of the wiring layers may be 40 占 퐉 or less, 36 占 퐉 or less, or 30 占 퐉 or less.

After the pattern of the dry film is formed, a wiring layer is formed and the dry film is peeled off. Here, the wiring layer can be formed by a plating method using a dry film having a desired pattern formed thereon as a plating mask.

The conductor material used for the wiring layer is not particularly limited. In a preferred embodiment, the wiring layer contains at least one metal selected from the group consisting of gold, platinum, palladium, silver, copper, aluminum, cobalt, chromium, zinc, nickel, titanium, tungsten, iron, tin and indium . The wiring layer may be a single metal layer or an alloy layer, and examples of the alloy layer include alloys of two or more metals selected from the above-mentioned group (for example, nickel-chromium alloy, copper-nickel alloy and copper- ). Among them, a single metal layer of chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver or copper or a nickel-chromium alloy, a copper-nickel alloy, An alloy layer of copper-titanium alloy is preferable and a single metal layer of chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver or copper or an alloy layer of nickel-chromium alloy is more preferable, More preferable.

The thickness of the wiring layer varies depending on the design of the desired wiring board, but is preferably 3 mu m to 35 mu m, more preferably 5 mu m to 30 mu m, further preferably 10 mu m to 20 mu m, or 15 mu m. In the case where the step of polishing or grinding the insulating layer in step (3) and exposing the wiring layer to connect the interconnection layers to each other is employed, it is preferable that the thicknesses of the interconnection layers and the interconnection layers are different. The thickness of the wiring layer can be adjusted by repeating the above pattern formation. The thickness of the wiring layer (conductive filler) having the largest thickness among the wiring layers varies depending on the design of the desired wiring board, but is preferably not more than 100 mu m and not less than 2 mu m. The interconnection for interlayer connection may be convex.

After forming the wiring layer, the dry film is peeled off. The dry film can be peeled off, for example, by using an alkaline peeling solution such as a sodium hydroxide solution. If desired, an unnecessary wiring pattern may be removed by etching or the like to form a desired wiring pattern. The pitch of the wiring layers to be formed is as described above.

&Lt; Process (2) >

Step (2) is a step of laminating the resin sheet of the present invention on a substrate with a wiring layer so that the wiring layer is embedded in the resin composition layer, and thermally curing to form an insulating layer. As shown in Fig. 1 (B), the wiring layer 14 of the substrate with the wiring layer obtained in the above-described step (1) is laminated so as to be embedded in the resin composition layer 21 of the resin sheet 20, The resin composition layer 21 of the sheet 20 is thermally cured to form an insulating layer (reference numeral 21 'in Fig. 1 (C) or Fig. 2 (B)). The resin sheet 20 is formed by laminating the resin composition layer 21 and the support 22 in this order.

The lamination of the wiring layer and the resin sheet can be performed by, for example, removing the protective film of the resin sheet and heat-pressing the resin sheet to the wiring layer from the support side. Examples of the member for heating and pressing the resin sheet to the wiring layer (hereinafter, also referred to as &quot; hot pressed member &quot;) include a heated metal plate (SUS hard plate) or a metal roll (SUS roll). It is also preferable to press the heat-press member through an elastic material such as a heat-resistant rubber so that the resin sheet can sufficiently be collected on the surface unevenness of the wiring layer without pressing the resin sheet directly.

The lamination of the wiring layer and the resin sheet may be performed by vacuum lamination after removing the protective film of the resin sheet. In the vacuum laminating method, the heat-pressing temperature is preferably in the range of 60 占 폚 to 160 占 폚, more preferably 80 占 폚 to 140 占 폚, the heat pressing pressure is preferably 0.098 MPa to 1.77 MPa, Is in the range of 0.29 MPa to 1.47 MPa, and the heat pressing time is preferably in the range of 20 seconds to 400 seconds, more preferably 30 seconds to 300 seconds. The lamination is preferably performed under a reduced pressure of 13 hPa or less.

After lamination, the laminated resin sheet may be subjected to smoothing treatment under atmospheric pressure (under atmospheric pressure), for example, by pressing the hot press member from the support side. The pressing condition of the smoothing treatment can be set to the same conditions as the hot pressing conditions of the lamination. The lamination and smoothing may be performed continuously using the commercial vacuum laminator.

The resin composition layer is laminated on the substrate with the wiring layer so that the wiring layer is buried, and then the resin composition layer is thermally cured to form the insulating layer. For example, the thermosetting condition of the resin composition layer varies depending on the type of the resin composition and the like, but the curing temperature may be in the range of 120 캜 to 240 캜, and the curing time may be in the range of 5 minutes to 120 minutes. The resin composition layer may be preheated to a temperature lower than the curing temperature before thermosetting the resin composition layer.

The support of the resin sheet may be peeled off after the resin sheet is laminated on the substrate with the wiring layer and thermally cured, and as shown in an example in Fig. 2B, the support may be peeled off before the resin sheet is laminated on the substrate with the wiring layer good. Further, the support may be peeled off prior to the coarsening treatment step to be described later.

&Lt; Process (3) >

Step (3) is a step of interconnecting the wiring layers. Specifically, a step of forming a via hole in an insulating layer and forming a conductor layer to connect the interconnection layers to each other (see Figs. 1 (C) and (D)). Or an insulating layer is polished or ground to expose the wiring layer to connect the wiring layers to each other (see Fig. 2 (C)).

When a step of forming a via hole in the insulating layer and forming a conductor layer to interconnect the wiring layers is employed, the formation of the via hole is not particularly limited, but laser irradiation, etching, and mechanical drilling can be mentioned. . This laser irradiation can be performed using any suitable laser processing machine using a carbon dioxide gas laser, a YAG laser, an excimer laser or the like as a light source. Specifically, as shown in an example in Fig. 1 (C), in the step (3), laser irradiation is performed from the surface side of the support 22 to penetrate the support 22 and the insulating layer 21 ' A via hole 31 for exposing the wiring layer 14 is formed.

The conditions of the laser irradiation are not particularly limited, and the laser irradiation can be carried out by any suitable process according to a conventional method according to the selected means.

The shape of the via hole, that is, the shape of the outline of the opening when viewed in the stretching direction is not particularly limited, but is generally circular (approximately circular).

A so-called dismear process, which is a smear removal process in a via hole after the formation of the via hole, may be performed. In the case where the conductor layer to be described later is formed by a plating process, for example, a wet desmear treatment may be performed on the via hole. In the case where the conductor layer is formed by a sputtering process, for example, A dry dismear process such as a plasma treatment process may be performed. The desmearing step may also serve as a roughening treatment step.

Before the conductor layer is formed, the via hole and the insulating layer may be subjected to a roughening treatment. The harmonic treatment may employ known means and conditions that are normally performed. Examples of the coarsening treatment of the dry process include plasma treatment and the like. Examples of the wet coarsening treatment include a swelling treatment with a swelling solution, a coarsening treatment with an oxidizing agent, and a neutralization treatment with a neutralizing solution in this order .

After the via hole is formed, the conductor layer 40 is formed as shown in Fig. 1 (D). The conductor material constituting the conductor layer is not particularly limited, and the conductor layer can be formed by any suitable conventionally known method such as plating, sputtering, or vapor deposition, and is preferably formed by plating. In a preferred embodiment, a conductor layer having a desired wiring pattern can be formed by plating on the surface of the insulating layer by a conventionally known technique such as a semi-insulating method or a pull-in method. When the support in the resin sheet is a metal foil, a conductor layer having a desired wiring pattern can be formed by a conventionally known technique such as a subtractive method. The conductor layer may have a single-layer structure or a multi-layer structure in which two or more single-metal layers or alloy layers made of different kinds of metals or alloys are stacked.

Specifically, the plating seed layer 41 is formed on the surface of the insulating layer by electroless plating. Subsequently, a mask pattern is formed on the formed plating seed layer to expose a part of the plating seed layer corresponding to the desired wiring pattern. An electroplating layer 42 is formed on the exposed plating seed layer by electrolytic plating. At this time, along with the formation of the electroplating layer 42, the via hole 31 may be filled by electrolytic plating to form the field via 61. After the electroplating layer 42 is formed, the mask pattern is removed. Thereafter, an unnecessary plating seed layer is removed by etching or the like, and the conductor layer 40 having a desired wiring pattern can be formed. The dry film used for forming the mask pattern when forming the conductor layer is the same as that of the dry film.

The conductor layer may include, for example, an electrode pad (land) on which an external terminal can be mounted, as well as wiring on a line. The conductor layer may be composed of only the electrode pad.

The conductor layer may be formed by forming an electroplated layer and field via after forming the plating seed layer without using a mask pattern and then performing patterning by etching.

When the step of polishing or grinding the insulating layer and exposing the wiring layer to connect the wiring layers to each other is employed, the wiring layer can be exposed as the insulating layer grinding method or the insulating layer is not particularly limited as long as the grinding or grinding surface is horizontal A conventional known polishing method or a grinding method can be applied. For example, a chemical mechanical polishing method using a chemical mechanical polishing apparatus, a mechanical polishing method such as a buff, and a planar grinding method using a grinding wheel can be given . The step of removing the smear and the step of roughening may be performed or a conductor layer may be formed as in the step of forming a via hole in the insulating layer and forming a conductor layer to connect the wiring layers to each other. 2 (C), it is not necessary to expose all of the wiring layers 14, and a part of the wiring layers 14 may be exposed.

&Lt; Process (4) >

The manufacturing method of the circuit board may include the step (4) in addition to the steps (1) to (3). Step (4) is a step of removing the base material to form the circuit board 1 of the present invention as shown in an example in Fig. 1 (E) and Fig. 2 (D). The method of removing the substrate is not particularly limited. In a preferred embodiment, the substrate is peeled from the circuit board at the interface between the first and second metal layers, and the second metal layer is etched away with, for example, a copper chloride aqueous solution. If necessary, the substrate may be peeled while the conductor layer is protected with a protective film.

[Semiconductor Chip Package]

A first form of the semiconductor chip package of the present invention is a semiconductor chip package on which a semiconductor chip is mounted on the circuit board of the present invention. A semiconductor chip package can be manufactured by bonding a semiconductor chip to the circuit board of the present invention.

As long as the terminal electrode of the semiconductor chip is conductively connected to the circuit wiring of the circuit board, the bonding conditions are not particularly limited and well-known conditions used for flip chip mounting of the semiconductor chip may be used. Further, an insulating adhesive may be interposed between the semiconductor chip and the circuit board.

In a preferred embodiment, the semiconductor chip is pressed onto a circuit board. As the compression conditions, for example, the compression temperature is in the range of 120 ° C. to 240 ° C. (preferably in the range of 130 ° C. to 200 ° C., more preferably in the range of 140 ° C. to 180 ° C.) Sec (preferably, 5 seconds to 30 seconds).

In another suitable embodiment, the semiconductor chip is bonded to the circuit board by reflowing. The reflow condition may be, for example, in the range of 120 占 폚 to 300 占 폚.

It is also possible to obtain a semiconductor chip package by, for example, filling the semiconductor chip with a mold underfill material after bonding the semiconductor chip to the circuit board. The filling with the mold underfill material can be carried out by a known method. The resin composition or resin sheet of the present invention can also be used as a mold underfill material.

A second embodiment of the semiconductor chip package of the present invention is a semiconductor chip package (Fan-out type WLP) 100 shown in Fig. 3 as an example, in which the encapsulation layer 120 is formed of the resin composition Or a resin chip. The semiconductor chip package 100 includes a semiconductor chip 110, an encapsulation layer 120 formed to cover the periphery of the semiconductor chip 110, and an encapsulation layer 120 on a surface opposite to the encapsulation layer of the semiconductor chip 110 (Redistribution layer) 140, a solder resist layer 150, and a bump 160. The solder resist layer 150 is formed of a redistribution layer (insulation layer) 130, a conductor layer In this method of manufacturing a semiconductor chip package,

(A) a step of laminating a temporary fixing film on a substrate,

(B) a step of temporarily fixing the semiconductor chip on the temporary fixing film,

(C) a step of laminating the resin composition layer of the resin sheet of the present invention on a semiconductor chip, or applying the resin composition of the present invention onto a semiconductor chip and thermally curing the resin layer to form a sealing layer,

(D) peeling the base material and the temporary fixing film from the semiconductor chip,

(E) a step of forming a rewiring layer (insulating layer) on the surface of the base material and the temporary fixing film of the semiconductor chip,

(F) a step of forming a conductor layer (re-wiring layer) on the rewiring layer (insulating layer), and

(G) forming a solder resist layer on the conductor layer. In addition, a method of manufacturing a semiconductor chip package may include (H) dicing a plurality of semiconductor chip packages into individual semiconductor chip packages and disengaging them.

&Lt; Process (A) >

Step (A) is a step of laminating a temporary film on a substrate. The lamination conditions of the substrate and the temporary film are the same as the lamination conditions of the wiring layer and the resin sheet in the step (2) in the method for producing a circuit board, and the preferable range is also the same.

The material used for the substrate is not particularly limited. As the substrate, a silicon wafer; Glass wafers; A glass substrate; Metal substrates such as copper, titanium, stainless steel, and cold-pressed steel sheets (SPCC); A substrate (for example, FR-4 substrate) obtained by impregnating glass fiber with an epoxy resin or the like and thermally curing the substrate; And a substrate made of a bismaleimide triazine resin (BT resin).

The fixed film can be peeled off from the semiconductor chip in the step (D) to be described later, and the material is not particularly limited as far as the semiconductor chip can be temporarily fixed. A commercially available product can be used as the temporary fixing film. Commercially available products include Ribalpa manufactured by Nitto Denko.

&Lt; Process (B) >

The step (B) is a step of processing the semiconductor chip on a temporary fixed film. The temporary fixing of the semiconductor chip can be carried out by using a known device such as a flip chip bonder or a die bonder. The layout and arrangement number of the arrangement of the semiconductor chips can be appropriately set in accordance with the shape, size and the number of semiconductor packages produced for the purpose, for example, and the like, and they can be arranged in a matrix of multiple rows or columns Can be determined.

&Lt; Process (C) >

Step (C) is a step of laminating the resin composition layer of the resin sheet of the present invention on a semiconductor chip, or applying the resin composition of the present invention onto a semiconductor chip, and thermally curing the resin composition layer to form a sealing layer. In the step (C), it is preferable that the resin composition layer of the resin sheet of the present invention is laminated on a semiconductor chip and thermally cured to form a sealing layer.

The lamination of the semiconductor chip and the resin sheet can be performed by removing the protective film of the resin sheet, for example, followed by hot-pressing the resin sheet to the semiconductor chip on the support side. Examples of the member for heating and pressing the resin sheet to the semiconductor chip (hereinafter, also referred to as &quot; hot pressing member &quot;) include a heated metal plate (SUS hard plate) or a metal roll (SUS roll). It is also preferable to press the heat-press member through an elastic material such as heat-resistant rubber so that the resin sheet is sufficiently harvested in the surface unevenness of the semiconductor chip without pressing the resin sheet directly.

The lamination of the semiconductor chip and the resin sheet may be carried out by vacuum lamination after removing the protective film of the resin sheet. The lamination conditions in the vacuum lamination method are the same as the lamination conditions of the wiring layer and the resin sheet in the step (2) in the method for producing a circuit board, and the preferable range is also the same.

The support of the resin sheet may be peeled off after the resin sheet is laminated on the semiconductor chip and thermally cured, or the support may be peeled off before the resin sheet is laminated on the semiconductor chip.

The application conditions of the resin composition are the same as the application conditions in forming the resin composition layer in the resin sheet of the present invention, and the preferable range is also the same.

&Lt; Process (D) >

The step (D) is a step of peeling the base material and the temporary film from the semiconductor chip. The method of peeling can be appropriately changed depending on the material of the temporary film, and examples thereof include a method of peeling off by heating, foaming (or expanding) the temporary fixing film, and a method of peeling off the base film by irradiating ultraviolet rays from the substrate side, And peeling off by lowering the adhesive force.

In the method of peeling the temporary fixed film by heating, foaming (or expanding) the film, the heating condition is usually from 100 to 250 DEG C for 1 second to 90 seconds or 5 minutes to 15 minutes. In addition, in the method of irradiating ultraviolet rays from the base side to lower the adhesive force of the temporary fixing film to peel off, the irradiation amount of ultraviolet rays is usually from 10 mJ / cm 2 to 1000 mJ / cm 2.

&Lt; Process (E) >

The step (E) is a step of forming a rewiring layer (insulating layer) on the substrate of the semiconductor chip and the surface on which the temporary fixing film is peeled off.

The material for forming the rewiring film forming layer (insulating layer) is not particularly limited as long as it has an insulating property at the time of forming the rewiring layer (insulating layer), and a photosensitive resin or a thermosetting resin is preferable from the viewpoint of easiness of manufacturing a semiconductor chip package . As the thermosetting resin, a resin composition having the same composition as the resin composition for forming the resin sheet of the present invention may be used.

A via hole may be formed in the rewiring layer (insulating layer) in order to connect the semiconductor chip and the conductor layer to be described later, after forming the rewiring formation layer (insulation layer).

In forming the via hole, when the material forming the rewiring layer (insulating layer) is a photosensitive resin, the active energy ray is first irradiated to the surface of the rewiring layer (insulating layer) through the mask pattern, Lt; / RTI &gt;

Examples of the active energy ray include ultraviolet ray, visible ray, electron ray and X-ray, and ultraviolet ray is particularly preferable. The irradiation amount of the ultraviolet ray and the irradiation time can be appropriately changed depending on the photosensitive resin. Examples of the exposure method include a contact exposure method in which the mask pattern is exposed to the rewiring layer (insulation layer) to expose the film, and a non-contact exposure method in which the mask pattern is exposed to light using a parallel light beam without contacting the rewiring layer May be used.

Next, the rewiring film forming layer (insulating layer) is developed and the unexposed portion is removed to form a via hole. The phenomenon is suitable for either the wet phenomenon or the dry phenomenon. A known developing solution may be used for the developing solution used in the wet phenomenon.

Examples of the development method include a dip method, a paddle method, a spray method, a brushing method, a scraping method, and the like, and from the viewpoint of resolution, a paddle method is suitable.

When the material forming the rewiring film forming layer (insulating layer) is a thermosetting resin, the formation of the via hole is not particularly limited, but laser irradiation, etching, and mechanical drilling can be mentioned. The laser irradiation may be performed using any suitable laser processing machine using a carbon dioxide gas laser, a UV-YAG laser, an excimer laser, or the like as a light source.

The conditions of the laser irradiation are not particularly limited, and the laser irradiation can be carried out by any suitable process according to a conventional method according to the selected means.

The shape of the via hole, that is, the contour shape of the opening in the drawing direction is not particularly limited, but generally it is circular (approximately circular). The top diameter of the via hole (opening diameter on the surface of the rewiring film forming layer (insulating layer)) is preferably 50 占 퐉 or less, more preferably 30 占 퐉 or less, further preferably 20 占 퐉 or less. The lower limit is not particularly limited, but is preferably 10 占 퐉 or more, more preferably 15 占 퐉 or more, and further preferably 20 占 퐉 or more.

&Lt; Process (F) >

Step (F) is a step of forming a conductor layer (re-wiring layer) on the rewiring layer (insulating layer). The method of forming the conductor layer on the rewiring film forming layer (insulating layer) is the same as the method of forming the conductor layer after the via hole is formed in the insulating layer of the step (3) in the method for producing a circuit board, same. The conductor layers (re-wiring layers) and the rewiring layer (insulating layers) may be alternately stacked (built up) by repeating the steps (E) and (F).

&Lt; Process (G) >

Step (G) is a step of forming a solder resist layer on the conductor layer.

The material for forming the solder resist layer is not particularly limited as long as it has an insulating property at the time of forming the solder resist layer, and from the viewpoint of easiness of manufacturing a semiconductor chip package, a photosensitive resin or a thermosetting resin is preferable. As the thermosetting resin, a resin composition having the same composition as the resin composition for forming the resin sheet of the present invention may be used.

In the step (G), bumping processing for forming bumps may be performed, if necessary. The bumping process can be performed by a known method such as solder balls, solder plating, and the like. Further, the formation of the via hole in the bumping process can be carried out as in the step (E).

&Lt; Process (H) >

The semiconductor chip package manufacturing method may include the step (H) in addition to the steps (A) to (G). The step (H) is a step of dicing a plurality of semiconductor chip packages into individual semiconductor chip packages and disengaging them.

A method of dicing a semiconductor chip package into individual semiconductor chip packages is not particularly limited, and a known method can be used.

A third form of the semiconductor chip package of the present invention is a package comprising a rewiring layer (insulating layer) 130 in a semiconductor chip package (Fan-out type WLP) as shown in Fig. 3, And the resistor layer 150 is made of the resin composition or resin sheet of the present invention.

[Semiconductor device]

Examples of the semiconductor device to be mounted on the semiconductor chip package of the present invention include semiconductor devices such as electronic products (e.g., computers, mobile phones, smart phones, tablet devices, For example, a motorcycle, an automobile, a train, a ship, an aircraft, and the like).

[Example]

Hereinafter, the present invention will be described concretely with reference to examples, but the present invention is not limited to these examples. In the following description, &quot; part &quot; and &quot;% &quot; representing the amount means &quot; part by mass &quot; and &quot;% by mass &quot;, respectively, unless otherwise specified.

&Lt; Evaluation of adhesion strength (copper foil filler strength) to copper foil and evaluation of reflow resistance >

(1) Foundation treatment of laminates

("R1515A" manufactured by Panasonic Corporation, substrate thickness: 0.2 mm) was put into an oven at 190 ° C. under a temperature condition of 190 ° C., and then heated and dried for 30 minutes to obtain a glass envelope epoxy resin double-sided copper clad laminate .

(2) Laminate of resin sheet

The protective resin film was peeled from the resin sheet prepared in the examples and the comparative example to expose the exposed resin composition layer using a batch type vacuum pressure laminator (Niko Material Science Co., Ltd., two stage build-up laminator "CVP700" The composition layer was laminated on both sides of the substrate so as to bond with the substrate. The lamination was carried out by reducing the pressure for 30 seconds to bring the air pressure to 13 hPa or less, followed by compression at 110 DEG C and a pressure of 0.74 MPa for 30 seconds.

(3) laminates of copper foil

After lamination of the resin sheets, the releasing PET film was peeled off and a laminate surface of an ultra-low-light-intensity electrolytic copper foil ("TQ-M4-VSP" manufactured by Mitsui Kinzoku Kogyo Co., Ltd., thickness 12 μm) was placed on the resin composition layer, Using a vacuum vacuum laminator (Niko Matrix Co., Ltd., 2-stage build-up laminator &quot; CVP700 &quot;), the copper foil and the resin composition layer were laminated on both sides of the substrate. The lamination was carried out by reducing the pressure for 30 seconds to bring the air pressure to 13 hPa or less, followed by compression at 110 DEG C and a pressure of 0.74 MPa for 30 seconds. Subsequently, the laminated resin composition layer was hot pressed and smoothed under atmospheric pressure at 100 DEG C and a pressure of 0.5 MPa for 60 seconds.

(4) Thermal curing of the resin composition layer

After the lamination of the ultra-low-light electrolytic copper foil, the laminate was placed in an oven at 100 ° C. for 30 minutes, then transferred to an oven at 190 ° C. for 190 minutes, and thermally cured for 90 minutes to form an insulating layer And a substrate was fabricated.

(5) Measurement of adhesion strength (copper foil fill strength) to copper foil (conductor layer)

The substrate prepared in (4) above was cut into small pieces of 150 mm x 30 mm. A notch with a width of 10 mm and a length of 100 mm was inserted into the copper foil portion of the piece and the one end of the copper foil was peeled off and picked up with a tweezer (AC-50C-SL manufactured by Tosu Corporation) Using a universal testing machine, the load at the time of holding 35 mm in the vertical direction at a rate of 50 mm / min at room temperature was measured to obtain a copper foil fill strength. The measurements were carried out on three pieces and the average values thereof were shown.

(6) Evaluation of reflow resistance

The substrate prepared in (4) above was cut into small pieces of 100 mm x 50 mm. The reflow temperature profile was then passed three times through a reflow apparatus ("HAS-6116" manufactured by Nippon Anthos Co., Ltd.) for reproducing the solder reflow temperature at a peak temperature of 260 ° C. (Reflow temperature profile conformed to IPC / JEDEC J-STD-020C ). The evaluation was carried out on three small pieces, and it was evaluated as x having an abnormality such as peeling in a part of the copper foil by visual observation, and? Having no abnormality in all the small pieces.

&Lt; Evaluation of flame retardancy &

(1) Foundation treatment of laminates

("R1515A" manufactured by Panasonic Corporation, substrate thickness: 0.2 mm) was put into an oven at 190 ° C. under a temperature condition of 190 ° C., and then heated and dried for 30 minutes to obtain a glass envelope epoxy resin double-sided copper clad laminate .

(2) Laminate of resin sheet

The protective resin film was peeled from the resin sheet prepared in the examples and the comparative example to expose the exposed resin composition layer using a vacuum type vacuum laminator (CVP700, 2 stage build-up laminator manufactured by Nichigo Materials Co., Ltd.) The resin composition layer was laminated on both sides of the substrate so as to be bonded to the substrate. The lamination was carried out by reducing the pressure for 30 seconds to bring the air pressure to 13 hPa or less, followed by compression at 110 DEG C and a pressure of 0.74 MPa for 30 seconds. Subsequently, the laminated resin sheet was subjected to heat pressing under atmospheric pressure at 100 DEG C and a pressure of 0.5 MPa for 60 seconds to be smoothed.

(3) Thermal curing of the resin composition layer

After lamination of the resin sheets, the mold releasing PET, which is a support, was peeled off, put into an oven at 100 캜 for 30 minutes, then moved to an oven at 190 캜 for 90 minutes, And cured to form an insulating layer, thereby preparing a substrate.

(4) Evaluation of flame retardancy

The substrate produced in the above (3) was cut into a size of 12.7 mm x 127 mm for testing of UL flame retardancy and the end surface was polished with a sandpaper (# 1200 and then # 2800) A test piece for flammability test was prepared. Thereafter, evaluation of V0 and V1 was carried out according to the UL flammability test standard (UL-94). In addition, when there is no sample remaining after 10 seconds of bonding, it is indicated by &quot; X &quot;.

&Lt; Measurement of Minimum Melting Viscosity of Resin Composition Layer >

Only the resin composition layer was peeled off from the release PET (support) of the resin sheet produced in the examples and the comparative examples, and pressed with a mold to prepare measurement pellets (diameter 18 mm, 1.2 to 1.3 g). Thereafter, using a parallel plate having a diameter of 18 mm, 1 g of the sample resin composition layer was measured with a dynamic viscoelasticity measuring apparatus (&quot; Rheosol-G-3000 &quot; And the dynamic viscosity modulus was measured under the measurement conditions of a measurement temperature interval of 2.5 캜, a frequency of 1 Hz, and a deformation of 1 deg, and the lowest melt viscosity (poise) was calculated.

&Lt; Evaluation of Film Formability &

(Lumirror-R80 manufactured by Toray Industries, Inc., thickness 38 占 퐉, softening point 130 占 폚, "release PET") which had been subjected to release treatment with an alkyd resin releasing agent (AL-5, manufactured by Lintec Corporation) was prepared as a support. The resin varnish thus prepared was coated on the dried resin composition layer so that the thickness of the resin composition layer after drying was 40 占 퐉 and dried at 80 to 120 占 폚 (average 100 占 폚) for 5 minutes to determine whether the resin composition layer was uniformly formed &Quot; A &quot; indicates that the resin composition layer was uniformly formed, and &quot; &quot; indicates that the resin composition layer was not uniformly formed.

&Lt; Synthesis Example 1 &

(Synthesis of Butadiene Structure and Resin Having Biphenylene Type Phenol Structure)

70 g of bifunctional hydroxyl-terminated polybutadiene (G-3000 manufactured by Nippon Soda Co., Ltd., number-average molecular weight = 3000, hydroxyl group equivalent = 1800 g / eq.) And 20 g of diethylene glycol dimethyl ether ) And 0.005 g of dibutyltin laurate were mixed and uniformly dissolved. After the temperature became uniform, the temperature was raised to 50 占 폚, and 8 g of isophorone diisocyanate (IPDI manufactured by Ebonic Dexia Japan Co., isocyanate group equivalent = 113 g / eq.) Was added thereto while stirring again. Next, 22 g of biphenylene type phenol resin (MEH-7851SS, manufactured by Meiwa Chemical Industries, Ltd., hydroxyl group equivalent = 203 g / eq.) And 20 g of diethylene glycol dimethyl ether ) Was added, the temperature was raised to 80 DEG C with stirring, and the reaction was carried out for about 4 hours. The disappearance of the NCO peak at 2250 cm ^-1 was confirmed by FT-IR. The reaction product was cooled to room temperature and filtered through a 100-mesh follicle to obtain a resin having a butadiene structure and a biphenylene phenol structure (hereinafter referred to as &quot; resin 1 &quot; (Nonvolatile content: 50% by mass). The number average molecular weight of the resin 1 was 5200.

&Lt; Synthesis Example 2 &

(Synthesis of Butadiene Structure and Resin Having Biphenylene Type Phenol Structure)

59 g of bifunctional hydroxyl-terminated polybutadiene (G-2000, manufactured by Nippon Soda Co., Ltd., number average molecular weight = 2000, hydroxyl group equivalent = 1200 g / eq.) And 20 g of diethylene glycol dimethyl ether ) And 0.005 g of dibutyltin laurate were mixed and uniformly dissolved. The mixture was heated to 50 DEG C at the point of time when it became uniform, and 12 g of isophorone diisocyanate (IPDI manufactured by Ebonic Dexia Japan Ltd., isocyanate group equivalent = 113 g / eq.) Was added while stirring again. Subsequently, the reaction product was cooled to room temperature, to which 29 g of biphenylene type phenol resin (MEH-7851M manufactured by Meiwa Kasei Co., Ltd., hydroxyl group equivalent = 210 g / eq.) And 20 g of diethylene glycol dimethyl ether ) Was added, the temperature was raised to 80 DEG C with stirring, and the reaction was carried out for about 4 hours. The disappearance of the NCO peak at 2250 cm ^-1 was confirmed by FT-IR. The reaction product was cooled to room temperature and filtered through a 100-mesh follicle to obtain a resin having a butadiene structure and a biphenylene phenol structure (hereinafter referred to as &quot; resin 2 &quot; (Nonvolatile content: 50% by mass). The number average molecular weight of Resin 2 was 4,100.

&Lt; Synthesis Example 3 &

(Synthesis of a resin having a hydrogenated butadiene structure and a naphthol aralkyl structure)

47 g of bifunctional hydroxyl-terminated polybutadiene (GI-1000 manufactured by Nippon Soda Co., Ltd., number-average molecular weight = 1500, hydroxyl group equivalent = 830 g / eq.) And 25 g of diethylene glycol dimethyl ether Manufactured by Tatsuo Co., Ltd.) and 0.005 g of dibutyltin laurate were mixed and homogeneously dissolved. After the temperature became uniform, the temperature was raised to 50 占 폚, and 15 g of isophorone diisocyanate (IPDI manufactured by Ebonic Dexia Japan Ltd., isocyanate group equivalent = 113 g / eq.) Was added while stirring again. Subsequently, 38 g of a naphthol aralkyl resin (SN-485, manufactured by Shinnitetsu Sumikin Kagaku Co., Ltd., hydroxyl group equivalent = 215 g / eq.) And 38 g of diethylene glycol dimethyl ether Ltd.), and the mixture was heated to 80 DEG C while stirring, and the reaction was carried out for about 4 hours. The disappearance of the NCO peak at 2250 cm ^-1 was confirmed by FT-IR. The reaction product was cooled to room temperature and filtered through a 100-mesh fibril to obtain a resin having a butadiene structure and a naphthol aralkyl structure (hereinafter referred to as &quot; resin 3 &quot; ) (Nonvolatile content of 50 mass%) was obtained. The number average molecular weight of Resin 3 was 3,100.

&Lt; Synthesis Example 4 &

(Synthesis of phenoxy resin having bicyclensol structure and bisphenol AF structure)

190 g of biscylenol type epoxy resin (YX4000, manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 185), 168 g of bisphenol AF (manufactured by Tokyo Chemical Industry Co., Ltd., molecular weight 336) and 200 g of cyclohexanone were placed in a reaction container and dissolved by stirring. Subsequently, 0.5 g of a tetramethylammonium chloride solution was added dropwise, and the mixture was reacted at 180 DEG C for 5 hours in a nitrogen atmosphere. After completion of the reaction, the reaction mixture was filtered using a filter cloth and diluted with a solvent to obtain a phenoxy resin (a 1: 1 solution of MEK and cyclohexanone in a solid content of 30 mass%) (hereinafter referred to as a biquilene structure and a bisphenol fluorene structure Is sometimes referred to as &quot; resin A &quot;). The epoxy equivalent of the resin A was 1,1200 and the weight average molecular weight was 33,000. Resin A had the following structural units.

&Lt; Example 1 >

, 5 parts of bisphenol AF type epoxy resin ("YL7760" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 238), 5 parts of phenoxy resin ("YX7553BH30" manufactured by Mitsubishi Chemical Corporation, 1: 1 solution of cyclohexanone: ), 1.5 parts of cyclohexanone and 1.5 parts of methyl ethyl ketone (MEK) were dissolved by heating while stirring. 10 parts of Resin 1, 10 parts of a curing accelerator (&quot; 1B2PZ-10M &quot;, manufactured by Shikoku Chemicals, Inc., 1-benzyl-2-phenylimidazole, 10 mass% ) And 0.5 parts of a flame retardant (HCA-HQ-HST, 10- (2,5-dihydroxyphenyl) -10-hydro-9-oxa-10-phosphaphenanthrene- ("SO-C2" manufactured by Adomex Co., Ltd., average particle diameter 0.5 mu m, average particle size 1.5 mu m) and 2 parts of an aminosilane coupling agent (KBM573 manufactured by Shin- (Carbon amount per unit surface area: 0.38 mg / m 2) were uniformly dispersed in a high-speed rotary mixer and filtered through a cartridge filter ("SHP050" manufactured by ROKITECHNO Co., Ltd.) to prepare a resin varnish 1.

(Lumirror-R80 manufactured by Toray Industries, Inc., thickness 38 占 퐉, softening point 130 占 폚, "release PET") which had been subjected to release treatment with an alkyd resin releasing agent (AL-5, manufactured by Lintec Corporation) was prepared as a support. The resin varnish 1 was uniformly coated on the release face so that the thickness of the resin composition layer after drying was 40 占 퐉, and the resin varnish 1 was dried at 80 to 120 占 폚 (average 100 占 폚) for 5 minutes. A roughened surface of a propylene film ("ALPAN MA-411", manufactured by OSIFFEX Co., Ltd., thickness: 15 μm) was adhered to the resin composition layer to prepare a resin sheet 1.

&Lt; Example 2 >

, 3 parts of biphenyl type epoxy resin ("NC3000L" manufactured by Nihon Kayaku Co., Ltd., epoxy equivalent 272), 2.5 parts of cyclohexanone and 2.5 parts of MEK were dissolved by heating while stirring. 15 parts of Resin 1, 10 parts of a curing accelerator (&quot; 1B2PZ-10M &quot;, manufactured by Shikoku Chemicals Co., Ltd., 1-benzyl-2-phenylimidazole, 10 parts by mass of solid content MEK ("SO-C4" manufactured by Adomex Co., Ltd.) having an average particle diameter of 1 mu m, a surface area per unit area of 0.5 mu m (Carbon amount: 0.31 mg / m 2) was uniformly dispersed in a high-speed rotary mixer and filtered through a cartridge filter ("SHP050" manufactured by ROKITECHNO Co., Ltd.) to prepare a resin varnish 2.

In producing the resin sheet 1, the resin varnish 1 was changed to resin varnish 2. A resin sheet 2 was produced in the same manner as in Example 1 except for the above.

&Lt; Example 3 >

4 parts of bisphenol AF type epoxy resin ("YL7760" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 238), 1 part of biphenyl type epoxy resin ("NC3100" manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent 258), 12 parts of Resin A, 1 part of hexanone and 1 part of methyl ethyl ketone (MEK) were heated and dissolved while stirring. The resultant solution was cooled to room temperature, and 20 parts of Resin 2 was added thereto and a curing accelerator ("1B2PZ-10M" manufactured by Shikoku Chemicals, Inc., 1-benzyl-2-phenylimidazole, ("SO-C2" manufactured by Adomex Co., Ltd., average particle diameter 0.5 mu m, carbon surface area per unit area (surface area) (0.38 mg / m 2) was uniformly dispersed in a high-speed rotary mixer and filtered through a cartridge filter ("SHP050" manufactured by ROKITECHNO Co., Ltd.) to prepare a resin varnish 3.

In producing the resin sheet 1, the resin varnish 1 was changed to the resin varnish 3. A resin sheet 3 was produced in the same manner as in Example 1 except for the above.

<Example 4>

2 parts of bisphenol AF type epoxy resin ("YL7760" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 238), 2 parts of biphenyl type epoxy resin ("NC3000L" manufactured by Nihon Kayaku Co., Ltd., epoxy equivalent 272), 12 parts of Resin A, 1.5 parts of hexanone and 1.5 parts of methyl ethyl ketone (MEK) were dissolved by heating while stirring. 10 parts of Resin 3, 10 parts of a curing accelerator ("1B2PZ-10M" manufactured by Shikoku Chemicals, Inc., 1-benzyl-2-phenylimidazole, 10 parts by mass of solid content MEK 0.5 parts of a flame retardant (HCA-HQ-HST, 10- (2,5-dihydroxyphenyl) -10-hydro-9-oxa-10-phosphaphenanthrene- (Average particle diameter 1.5 占 퐉), and spherical silica surface treated with an aminosilane-based coupling agent (KBM573 manufactured by Shin-Etsu Chemical Co., Ltd.) ("SO-C2" , And 20 parts of a carbon amount per unit surface area of 0.38 mg / m 2) were mixed and dispersed homogeneously with a high-speed rotary mixer and filtered through a cartridge filter ("SHP050" manufactured by ROKITECHNO Co., Ltd.) to prepare a resin varnish 4.

In producing the resin sheet 1, the resin varnish 1 was changed to resin varnish 4. A resin sheet 4 was produced in the same manner as in Example 1 except for the above.

&Lt; Example 5 >

3 parts of a xylene structure-containing epoxy resin ("YX7700" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent: 270), 2.5 parts of cyclohexanone and 2.5 parts of MEK were dissolved by heating while stirring. 15 parts of Resin 1, 10 parts of a curing accelerator (&quot; 1B2PZ-10M &quot;, manufactured by Shikoku Chemicals Co., Ltd., 1-benzyl-2-phenylimidazole, 10 parts by mass of solid content MEK ("SO-C4" manufactured by Adomex Co., Ltd.) having an average particle diameter of 1 mu m, a surface area per unit area of 0.5 mu m (Carbon amount: 0.31 mg / m 2) were uniformly dispersed in a high-speed rotary mixer and filtered through a cartridge filter ("SHP050" manufactured by ROKITECHNO Co., Ltd.) to prepare a resin varnish 5.

In the production of the resin sheet 1, the resin varnish 1 was changed to the resin varnish 5. A resin sheet 5 was produced in the same manner as in Example 1 except for the above.

&Lt; Example 6 >

, 4 parts of a dicyclopentadiene type epoxy resin (HP-7200, epoxy equivalent 258, manufactured by DIC Corporation), 2 parts of a flame retardant ("PX-200" manufactured by Daihachi Kagaku Corporation), 2.5 parts of cyclohexanone, The components were heated and dissolved while stirring. 15 parts of Resin 1, 2 parts of active ester curing agent (EXB-8000L-65TM manufactured by DIC Corporation, MEK / toluene solution of solid content 65% by mass, active ester equivalent 220) , 0.5 part of a curing accelerator ("1B2PZ-10M" manufactured by Shikoku Chemicals, Inc., 1-benzyl-2-phenylimidazole, MEK solution of a solid content of 10% by mass) and an aminosilane- 35 parts of spherical silica ("SO-C4" manufactured by Adomex Company, average particle diameter: 1 μm, carbon amount per unit surface area of 0.31 mg / m 2) surface-treated with a high-speed rotary mixer And filtered through a cartridge filter ("SHP050" manufactured by ROKITECHNO Co., Ltd.) to produce a resin varnish 6.

In producing the resin sheet 1, the resin varnish 1 was changed to the resin varnish 6. A resin sheet 6 was produced in the same manner as in Example 1 except for the above.

&Lt; Example 7 >

3 parts of naphthalene type epoxy resin ("HP4032SS" manufactured by DIC Corporation, epoxy equivalent 142), 12 parts of Resin A, 1.5 parts of cyclohexanone and 1.5 parts of methyl ethyl ketone (MEK) were dissolved by heating while stirring. 10 parts of Resin 3, 10 parts of a curing accelerator ("1B2PZ-10M" manufactured by Shikoku Chemicals, Inc., 1-benzyl-2-phenylimidazole, 10 parts by mass of solid content MEK 0.5 parts of a flame retardant (HCA-HQ-HST, 10- (2,5-dihydroxyphenyl) -10-hydro-9-oxa-10-phosphaphenanthrene- , 2 parts of an average particle size of 1.5 mu m), and 2 parts of spherical silica surface-treated with an aminosilane-based coupling agent (KBM573 manufactured by Shin-Etsu Chemical Co., , And 20 parts of a carbon amount per unit surface area of 0.38 mg / m 2) were mixed and uniformly dispersed with a high-speed rotary mixer and filtered through a cartridge filter ("SHP050" manufactured by ROKITECHNO) to prepare a resin varnish 7.

In producing the resin sheet 1, the resin varnish 1 was changed to the resin varnish 7. A resin varnish 7 was produced in the same manner as in Example 1 except for the above.

&Lt; Comparative Example 1 &

, 5 parts of bisphenol AF type epoxy resin ("YL7760" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 238), 5 parts of phenoxy resin ("YX7553BH30" manufactured by Mitsubishi Chemical Corporation, 1: 1 solution of cyclohexanone: ), 1.5 parts of cyclohexanone and 1.5 parts of methyl ethyl ketone (MEK) were dissolved by heating while stirring. 4 parts of a bifunctional hydroxyl-terminated polybutadiene (G-3000 manufactured by Nippon Soda Co., Ltd., number-average molecular weight = 3000, hydroxyl group equivalent = 1800 g / eq.), 2 parts of phenylene phenol resin (MEH-7851M solution (hydroxyl equivalent = 210 g / eq., Manufactured by Meiwa Kasei Co., Ltd., MEK solution of nonvolatile fraction 60 mass%) and 2 parts of flame retardant (HCA-HQ- Oxa-10-phosphaphenanthrene-10-oxide, average particle diameter 1.5 占 퐉) and an aminosilane coupling agent (Shinetsu Kogyo Co., 15 parts of spherical silica ("SO-C2" manufactured by Adomex Company, average particle diameter 0.5 μm, carbon amount per unit surface area 0.38 mg / m 2) surface-treated with a high-speed rotary mixer To prepare a resin varnish 8, but a separated product appeared and could not be filtered.

As in the production of the resin sheet 1, the resin varnish 1 was replaced with the resin varnish 8 to attempt the production of the resin sheet 8, but a uniform coating film (film formability) could not be formed and the resin sheet 8 could not be produced. As a result, evaluation of the lowest melt viscosity, copper foil strength, reflow resistance and flame retardancy of the resin composition layer could not be performed.

&Lt; Comparative Example 2 &

, 20 parts of Resin 1, 0.5 parts of a curing accelerator ("1B2PZ-10M" manufactured by Shikoku Chemicals, Inc., 1-benzyl-2-phenylimidazole, MEK solution of solid content 10% by mass) ("SO-C4" manufactured by Adomatex Co., Ltd., average particle diameter: 1 μm, carbon content per unit surface area: 0.31 mg / m 2) surface-treated with a surface treatment agent (KBM573 manufactured by Shin-Etsu Chemical Co., The mixture was homogeneously dispersed with a high-speed rotary mixer and filtered through a cartridge filter ("SHP050" manufactured by ROKITECHNO) to prepare a resin varnish 9.

In the production of the resin sheet 1, the resin varnish 1 was changed to resin varnish 9. A resin sheet 9 was produced in the same manner as in Example 1 except for the above.

&Lt; Comparative Example 3 &

, 3 parts of a bisphenol AF type epoxy resin ("YL7760" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 238), 3 parts of a phenoxy resin ("YX7553BH30" manufactured by Mitsubishi Chemical Corporation, a 1: 1 solution of a cyclohexanone: ), 5 parts of a phenoxy resin ("1256B40" manufactured by Mitsubishi Chemical Corporation, 40% by mass of a solid content solution), 1 part of cyclohexanone and 1 part of methyl ethyl ketone (MEK) were dissolved by heating while stirring. The resulting solution was cooled to room temperature. To the solution were added 20 parts of Resin 1, 20 parts of a curing accelerator (&quot; 1B2PZ-10M &quot;, manufactured by Shikoku Chemicals, Inc., 1-benzyl-2-phenylimidazole, ("SO-C2" manufactured by Adomex Co., Ltd., average particle diameter 0.5 mu m, carbon surface area per unit area (surface area) (0.38 mg / m 2) was uniformly dispersed with a high-speed rotary mixer and filtered through a cartridge filter ("SHP050" manufactured by ROKITECHNO Co., Ltd.) to prepare a resin varnish 10.

In producing the resin sheet 1, the resin varnish 1 was changed to the resin varnish 10. A resin sheet 10 was produced in the same manner as in Example 1 except for the above.

The abbreviations and the like in the following table are as follows.

Resin 1: A resin having a butadiene structure and a biphenylene type phenol structure synthesized in Synthesis Example 1

Resin 2: A resin having a butadiene structure and a biphenylene type phenol structure synthesized in Synthesis Example 2

Resin 3: A resin having a hydrogenated butadiene structure and a naphthol aralkyl structure synthesized in Synthesis Example 3

YL7760: bisphenol AF type epoxy resin (manufactured by Mitsubishi Chemical Corporation, epoxy equivalent: 238)

NC3000L: biphenyl-type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent: 272)

NC3100: biphenyl-type epoxy resin (manufactured by Nihon Kayaku Co., Ltd., epoxy equivalent: 258)

YX7700: Epoxy resin containing xylene structure (manufactured by Mitsubishi Chemical Corporation, epoxy equivalence: 270)

HP-7200: dicyclopentadiene type epoxy resin (manufactured by DIC, epoxy equivalent: 258)

HP4032SS: naphthalene type epoxy resin (manufactured by DIC Corporation, epoxy equivalent: 142)

SO-C2: spherical silica surface treated with an amino silane coupling agent (KBM573 manufactured by Shin-Etsu Chemical Co., Ltd.) ("SO-C2" manufactured by Adomatex Co., Ltd., average particle diameter 0.5 μm, Mg / m 2)

SO-C4: spherical silica surface-treated with an amino silane coupling agent (KBM573 manufactured by Shin-Etsu Chemical Co., Ltd.) ("SO-C4" manufactured by Adomex Company, average particle diameter 1 μm, Mg / m 2)

YX7553BH30: phenoxy resin (manufactured by Mitsubishi Chemical Corporation, a 1: 1 solution of 30% by mass of cyclohexanone: MEK)

1256B40: phenoxy resin (MEK solution, solid content 40% by mass, manufactured by Mitsubishi Chemical)

Resin A: A phenoxy resin having a beccylenol structure and a bisphenol fluorene structure synthesized in Synthesis Example 4

1B2PZ-10M: Curing accelerator (1-benzyl-2-phenylimidazole manufactured by Shikoku Chemicals, Inc., MEK solution of solid content 10% by mass)

HCA-HQ-HST: flame retardant (10- (2,5-dihydroxyphenyl) -10-hydro-9-oxa-10-phosphaphenanthrene-10-oxide,

PX-200: Flame retardant (manufactured by Daihachi Kagaku Kogyo Co., Ltd.)

G-3000: bifunctional hydroxyl terminated polybutadiene (number average molecular weight = 3000, hydroxyl group equivalent = 1800 g / eq., Manufactured by Nippon Soda Co., Ltd.)

MEH-7851M: biphenylene type phenol resin (manufactured by Meiwa Chemical Industries, Ltd., hydroxyl equivalent = 210 g / eq.)

Content of Component (a): The content (mass%) of the component (a) when the nonvolatile component of the resin composition is 100 mass%.

(b) Content: The content (mass%) of the component (b) when the nonvolatile component of the resin composition is 100 mass%.

(c) Content: The content (mass%) of the component (c) when the nonvolatile component of the resin composition is 100 mass%.

1 circuit board
10 wiring layer-attached substrate
11 substrate (core substrate)
12 First metal layer
13 second metal layer
14 wiring layer (buried wiring layer)
20 Resin Sheet
21 Resin composition layer
21 'insulation layer
22 support
31 via holes
40 conductor layer
41 Plated seed layer
42 electrolytic plating layer
61 field empty
100 semiconductor chip package
110 semiconductor chip
120 bag layer
130 Reinforcing layer (insulating layer)
140 conductor layer (re-wiring layer)
150 solder resist layer
160 bump

Claims (18)

(a) a compound having at least one structural unit selected from the group consisting of (i) a butadiene structural unit which may be hydrogenated, and (ii) a biphenylene type phenol structural unit and a naphthol aralkyl structural unit,
(b) an epoxy resin having two or more epoxy groups and at least one aromatic ring in one molecule, and
(c) a resin composition containing an inorganic filler,
(c) the inorganic filler is 30 mass% or more when the nonvolatile component of the resin composition is 100 mass%. The epoxy resin composition according to claim 1, wherein the component (b) is an epoxy resin having, in one molecule, at least two epoxy groups, at least one aromatic ring and a fluorine atom; Bisphenol A type epoxy resin; Bisphenol F type epoxy resin; An epoxy resin having, in one molecule, at least two epoxy groups and at least one biphenyl structure; An epoxy resin having, in one molecule, at least two epoxy groups and at least one condensed ring; An epoxy resin having, in one molecule, at least two epoxy groups and at least one xylene structure; An epoxy resin having at least one glycidylamino group, at least one epoxy group and at least one aromatic ring in one molecule; An epoxy resin having, in one molecule, at least two epoxy groups, at least one aromatic ring and a dicyclopentadienyl structure; And an epoxy resin having at least two glycidyloxybenzene structures in one molecule. The epoxy resin composition according to claim 1, wherein the component (b) is an epoxy resin having, in one molecule, at least two epoxy groups, at least one aromatic ring and a fluorine atom; An epoxy resin having, in one molecule, at least two epoxy groups and at least one biphenyl structure; An epoxy resin having, in one molecule, at least two epoxy groups and at least one condensed ring; An epoxy resin having, in one molecule, at least two epoxy groups and at least one xylene structure; And at least one selected from the group consisting of an epoxy resin having at least two epoxy groups, at least one aromatic ring and a dicyclopentadienyl structure in one molecule. The resin composition according to claim 1, wherein the number average molecular weight of the component (a) is 1000 to 20,000. The resin composition according to claim 1, wherein the content of the component (a) is 3% by mass to 40% by mass, based on 100% by mass of the nonvolatile component of the resin composition. The resin composition according to claim 1, wherein the content of the component (b) is 2% by mass to 30% by mass when the nonvolatile component of the resin composition is 100% by mass. The resin composition according to claim 1, wherein the epoxy equivalent of the component (b) is 200 or more. The resin composition according to claim 1, further comprising (d) a phenoxy resin. The resin composition according to claim 8, wherein the component (d) is a phenoxy resin comprising a bisphenol AF structure. The resin composition according to claim 8, wherein the content of the component (d) is 1% by mass to 20% by mass when the nonvolatile component of the resin composition is 100% by mass. The resin composition according to claim 1, further comprising (e) a curing agent. The resin composition according to claim 1, further comprising (g) a flame retardant. The resin composition according to claim 12, wherein the content of the component (g) is 1% by mass to 20% by mass based on 100% by mass of the nonvolatile component of the resin composition. A resin sheet having a support and a resin composition layer containing the resin composition according to any one of claims 1 to 13, provided on the support. The resin sheet according to claim 14, which is a resin sheet for an insulating layer of a semiconductor chip package. A circuit board comprising an insulating layer formed by a cured product of the resin composition according to any one of claims 1 to 13. A semiconductor chip package on which a semiconductor chip is mounted on the circuit board according to claim 16. A semiconductor chip package comprising the resin composition according to any one of claims 1 to 13, or the semiconductor chip encapsulated with the resin sheet according to claim 14 or 15.

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