KR102334205B1 - 기판 전하 중성화를 위한 핀치된 플라즈마 브리지 플러드 건 - Google Patents

기판 전하 중성화를 위한 핀치된 플라즈마 브리지 플러드 건 Download PDF

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KR102334205B1
KR102334205B1 KR1020167013402A KR20167013402A KR102334205B1 KR 102334205 B1 KR102334205 B1 KR 102334205B1 KR 1020167013402 A KR1020167013402 A KR 1020167013402A KR 20167013402 A KR20167013402 A KR 20167013402A KR 102334205 B1 KR102334205 B1 KR 102334205B1
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plasma
conductive block
closed loop
plasma chamber
conductive
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KR20160078388A (ko
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알리 샤지
데이비드 소넨샤인
마이클 키시네프스키
앤드류 비. 코위
그레고리 이. 스트라토티
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베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H01L21/67213—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0471—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H01J2237/0044—Neutralising arrangements of objects being observed or treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/327—Arrangements for generating the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/336—Changing physical properties of treated surfaces
    • H01J2237/3365—Plasma source implantation

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)
KR1020167013402A 2013-10-25 2014-10-23 기판 전하 중성화를 위한 핀치된 플라즈마 브리지 플러드 건 Active KR102334205B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361895787P 2013-10-25 2013-10-25
US61/895,787 2013-10-25
US14/137,196 2013-12-20
US14/137,196 US9070538B2 (en) 2013-10-25 2013-12-20 Pinched plasma bridge flood gun for substrate charge neutralization
PCT/US2014/061984 WO2015061578A1 (en) 2013-10-25 2014-10-23 Pinched plasma bridge flood gun for substrate charge neutralization

Publications (2)

Publication Number Publication Date
KR20160078388A KR20160078388A (ko) 2016-07-04
KR102334205B1 true KR102334205B1 (ko) 2021-12-02

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KR1020167013402A Active KR102334205B1 (ko) 2013-10-25 2014-10-23 기판 전하 중성화를 위한 핀치된 플라즈마 브리지 플러드 건

Country Status (6)

Country Link
US (1) US9070538B2 (https=)
JP (1) JP6379187B2 (https=)
KR (1) KR102334205B1 (https=)
CN (1) CN105723498B (https=)
TW (1) TWI623016B (https=)
WO (1) WO2015061578A1 (https=)

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JP6779295B2 (ja) * 2015-12-27 2020-11-04 インテグリス・インコーポレーテッド スパッタリングガス混合物中のトレースその場クリーニングガスを利用したイオン注入プラズマフラッドガン（ｐｆｇ）の性能の改善
US9824857B2 (en) * 2016-01-14 2017-11-21 Varian Semiconductor Equipment Associates, Inc. Method for implantation of semiconductor wafers having high bulk resistivity
DE102016005537A1 (de) * 2016-05-04 2017-11-09 Forschungszentrum Jülich GmbH Fachbereich Patente Verfahren zur Herstellung von Schichten von ReRAM-Speichern und Verwendung eines Implanters
KR102724872B1 (ko) * 2017-12-15 2024-11-04 엔테그리스, 아이엔씨. 플라즈마 플러드 건(pfg) 작동을 위해 불소 함유 가스 및 불활성 가스를 사용하는 방법 및 어셈블리

Citations (3)

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Publication number Priority date Publication date Assignee Title
JP2005093384A (ja) 2003-09-19 2005-04-07 Applied Materials Inc エレクトロンフラッド装置及びイオン注入装置
JP2013511812A (ja) 2009-11-18 2013-04-04 アプライド マテリアルズ インコーポレイテッド プラズマ源デザイン
JP2013120685A (ja) 2011-12-07 2013-06-17 Panasonic Corp プラズマ処理装置及びプラズマ処理方法

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JP3054302B2 (ja) * 1992-12-02 2000-06-19 アプライド マテリアルズ インコーポレイテッド イオン注入中の半導体ウェハにおける帯電を低減するプラズマ放出システム
US6020592A (en) * 1998-08-03 2000-02-01 Varian Semiconductor Equipment Associates, Inc. Dose monitor for plasma doping system
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US6265033B1 (en) * 1998-09-11 2001-07-24 Donald Bennett Hilliard Method for optically coupled vapor deposition
US6645354B1 (en) * 2000-04-07 2003-11-11 Vladimir I. Gorokhovsky Rectangular cathodic arc source and method of steering an arc spot
US7288491B2 (en) * 2000-08-11 2007-10-30 Applied Materials, Inc. Plasma immersion ion implantation process
US7094670B2 (en) * 2000-08-11 2006-08-22 Applied Materials, Inc. Plasma immersion ion implantation process
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US7304310B1 (en) 2003-11-21 2007-12-04 Kla-Tencor Technologies Corp. Methods and systems for inspecting a specimen using light scattered in different wavelength ranges
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JP2005093384A (ja) 2003-09-19 2005-04-07 Applied Materials Inc エレクトロンフラッド装置及びイオン注入装置
JP2013511812A (ja) 2009-11-18 2013-04-04 アプライド マテリアルズ インコーポレイテッド プラズマ源デザイン
JP2013120685A (ja) 2011-12-07 2013-06-17 Panasonic Corp プラズマ処理装置及びプラズマ処理方法

Also Published As

Publication number Publication date
TW201523687A (zh) 2015-06-16
JP2016534495A (ja) 2016-11-04
CN105723498A (zh) 2016-06-29
CN105723498B (zh) 2018-10-26
WO2015061578A1 (en) 2015-04-30
TWI623016B (zh) 2018-05-01
JP6379187B2 (ja) 2018-09-05
US20150115796A1 (en) 2015-04-30
KR20160078388A (ko) 2016-07-04
US9070538B2 (en) 2015-06-30

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