KR102332664B1 - Apparatus for testing semiconductor package and apparatus for testing socket used for testing semiconductor package - Google Patents

Abstract

According to the present invention, a semiconductor package or socket can be tested in a temperature stress environment, and a fluid within a set temperature range is discharged to the semiconductor package or socket accommodated in the chamber of the socket module to apply temperature stress thereto. and a socket test apparatus for semiconductor package testing.

Description

Semiconductor package test device and socket test device for semiconductor package test

The present invention relates to a semiconductor package test apparatus and a socket test apparatus for semiconductor package test.

In general, a semiconductor package completed by a semiconductor manufacturing process is checked as to whether operating characteristics are properly implemented through a test (inspection) process, and then shipped when classified as a good product.

In this inspection process, the test is performed by connecting the semiconductor package to the socket, so that there is no problem in electrical operation. Such inspection is sometimes performed in an environment in which a semiconductor package is heated or cooled and temperature stress is applied thereto.

In that case, a method of applying temperature stress to the semiconductor package by heating or cooling the air in the space (room) for the inspection is used. However, since the temperature stress does not directly act on the semiconductor package, the effect of applying the temperature stress is halved.

Furthermore, in the above case, the socket together with the semiconductor package is also placed in an environment subjected to temperature stress. Accordingly, when a socket is produced, it is necessary to check whether the socket itself also operates properly under the above temperature stress.

SUMMARY OF THE INVENTION One object of the present invention is to provide a semiconductor package testing apparatus capable of directly and three-dimensionally applying a temperature stress to a semiconductor package.

Another object of the present invention is to provide a socket test apparatus for testing a semiconductor package, which can determine whether a socket is of good quality by directly applying temperature stress to the socket.

According to an aspect of the present invention, there is provided a socket test apparatus for testing a semiconductor package, comprising: a socket module having a housing for accommodating a semiconductor package while being coupled to the socket and aligning with the socket; a substrate module supporting the socket and inputting electricity to the socket; a pusher module for pressing a semiconductor package against the socket so that the semiconductor package is electrically connected to the socket; a fluid providing module for providing a fluid within a set temperature range to the socket module; and a control module electrically connected to the substrate module and configured to measure electrical characteristics of the socket in a state in which the socket is subjected to temperature stress due to the influence of the fluid, wherein the socket module is opened toward the pusher module and a base having a chamber in which the socket is locatable and disposed to face the pusher module; and a discharging unit in communication with the fluid providing module and discharging the fluid to the chamber to flow toward the socket.

Here, the chamber may include: a first space into which the pusher module is inserted to proceed toward the socket; and a second space having a larger cross-sectional area than the first space and accommodating the housing, wherein the second space includes the pusher with respect to the first space in a state where the pusher module is spaced apart from the base. It can be located on the opposite side of the module.

Here, the discharge unit may include a hollow channel extending inside the base and communicating with the chamber.

Here, the discharge unit may further include a distribution channel formed concavely on a surface defining the chamber of the base to flow the fluid discharged from the hollow channel to the socket beyond the housing.

Here, the distribution channel may include a first accumulation part concavely formed in a portion of the base corresponding to the outlet of the hollow channel on an inner wall facing the housing.

Here, the distribution channel may further include a second accumulator configured to be concave on an inner wall of the base facing the housing and opposite to the outlet of the hollow channel to accumulate the fluid.

Here, the distribution channel may further include a connection part connecting the fluid accumulated in the first accumulation part to flow to the second accumulation part.

Here, the connection part may be concavely formed in a ceiling surface defining the second space of the base.

Here, the connection part may be formed to extend along a circumferential direction of the first space from the ceiling surface.

Here, the pusher module includes a body; a blade protruding from the body and inserted into the chamber to press the semiconductor package against the socket; and a blocking member protruding from the body in a shape surrounding the blade and blocking a gap between the base and the body.

A semiconductor package test apparatus according to another aspect of the present invention includes a socket module including a socket; a substrate module supporting the socket and inputting electricity to the socket; a pusher module for pressing a semiconductor package against the socket to be electrically connected to the socket; a fluid providing module for providing a fluid within a set temperature range to the socket module; and a control module electrically connected to the substrate module and configured to measure electrical characteristics of the semiconductor package in a state in which the semiconductor package is subjected to temperature stress by the pusher module and the fluid providing module, wherein the pusher module comprises: a blade contacting the semiconductor package to press the semiconductor package to the socket; a heating unit for heating the semiconductor package through the blade to generate the temperature stress; and a cooling unit for cooling the semiconductor package through the blade to generate the temperature stress, wherein the socket module has a chamber open toward the pusher module and in which the socket is positionable, the pusher module a base disposed to face; and a discharging unit communicating with the fluid providing module and discharging the fluid to the chamber to flow toward the socket.

Here, the pusher module, the body to which the blade is installed to protrude; and a blocking member protruding from the body in a shape surrounding the blade and blocking a gap between the socket module and the body.

Here, the socket module, disposed on the socket, further comprising a housing for accommodating the semiconductor package and aligning with the socket, the chamber, the pusher module is inserted to advance toward the socket 1 space; and a second space having a larger cross-sectional area than the first space and accommodating the housing, wherein the second space includes the pusher with respect to the first space in a state where the pusher module is spaced apart from the base. It can be located on the opposite side of the module.

According to the semiconductor package test apparatus and the socket test apparatus for semiconductor package test according to the present invention configured as described above, a semiconductor package or socket can be tested in a temperature stress environment, and the semiconductor package or socket accommodated in the chamber of the socket module is set By discharging a fluid in a temperature range, temperature stress can be imparted thereto.

Thereby, the temperature stress for the semiconductor package can be applied not only to the upper surface thereof through the blade of the pusher module, but also to the lower surface thereof by the fluid, so that the semiconductor package can be tested in a more direct and three-dimensional temperature stress environment. have.

Also, sockets can be tested under direct temperature stress by the fluid.

According to the above, the temperature stress set for the test subject can be accurately applied as set, so that the reliability of the test can be guaranteed.

1 is an exploded perspective view of a test apparatus 100 according to an embodiment of the present invention.
FIG. 2 is a block diagram illustrating a control operation of the test apparatus 100 of FIG. 1 .
3 is a cut-away perspective view of the socket module 130 of FIG. 1 in an assembled state.
4 is a partial perspective view of the base 135 when viewed from the bottom side of the chamber 137 of the base 135 of FIG. 3 .
5 is a cut-away perspective view of the main part showing a state in which the pusher module 110 of FIG. 1 is in contact with the socket module 130 .

Hereinafter, a semiconductor package test apparatus and a socket test apparatus for semiconductor package test according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. In the present specification, the same and similar reference numerals are assigned to the same and similar components in different embodiments, and the description is replaced with the first description.

1 is an exploded perspective view of a test apparatus 100 according to an embodiment of the present invention, and FIG. 2 is a block diagram illustrating a control operation of the test apparatus 100 of FIG. 1 .

Referring to the drawings, the test apparatus 100 is for testing electrical characteristics of an object while applying a direct temperature stress to the object. When the object is the socket 131 , the test apparatus 100 may be referred to as a socket test apparatus. Alternatively, when the object is the semiconductor package P, the test apparatus 100 may be referred to as a semiconductor package test apparatus. As described above, the test apparatus 100 can be used as a socket test apparatus or a semiconductor package test apparatus by partially adjusting the configuration. Hereinafter, the two types of use will be comprehensively considered and described.

As a whole, the test apparatus 100 may include a pusher module 110 , a socket module 130 , a substrate module 150 , a control module 170 , and a fluid providing module 190 .

The pusher module 110 is configured to press the semiconductor package P against the socket module 130 , specifically, the socket 131 . This allows the semiconductor package P to be electrically connected to the socket 131 . Specifically, the pusher module 110 may include a body 111 , a blade 113 , a blocking member 115 , a heating unit 117 , a cooling unit 119 , and a first temperature sensor 120 . .

The body 111 accommodates the heating unit 117 and the cooling unit 119 therein, and may generally have a box shape. Furthermore, the body 111 is formed of a heat insulating material, so that the heat generated by the heating unit 117 or the cold air generated by the cooling unit 119 is minimized from being radiated to the outside. An alignment pin 112 for aligning the body 111 with respect to the socket module 130 may be protruded from the bottom surface of the body 111 .

The blade 113 is formed to protrude from the bottom surface of the body 111 . The blade 113 may have a shape like a block having a substantially rectangular cross-section. The bottom surface of the blade 113 becomes a contact surface in contact with the semiconductor package P. Furthermore, since the suction pad 114 is installed on the contact surface, the semiconductor package P may be vacuum-adsorbed on the contact surface. The blade 113 presses the semiconductor package P against the socket 131 through the contact surface.

The blocking member 115 is formed to protrude from the body 111 in a shape surrounding the blade 113 . The blocking member 115 may be attached to a bottom surface or a side surface of the body 111 . The blocking member 115 forms a closed loop, for example, a square loop, thereby blocking a gap between the pusher module 110 and the socket module 130 . The blocking member 115 may be formed of, for example, a silicon material.

The heating unit 117 is configured to generate heat in order to apply temperature stress to the semiconductor package P. The heating unit 117 may specifically include a ceramic heater. The ceramic heater is disposed inside the body 111 , and heat generated therefrom is transferred to the semiconductor package P through the blade 113 .

The cooling unit 119 is also configured to take heat in order to apply temperature stress to the semiconductor package P. The cooling unit 119 takes heat from the semiconductor package P through the blade 113 and discharges it to the outside. The cooling unit 119 may specifically include a thermoelectric element (not shown) and a heat dissipation element 119 ′. The thermoelectric element operates by the Peltier effect. The heat dissipation device 119 ′ is configured to discharge heat of the semiconductor package P absorbed by the thermoelectric device through the blade 113 to the outside. The heat dissipating element 119 ′ may have a cooling water flow path through which the cooling water flows.

The first temperature sensor 120 is configured to measure the temperature of the semiconductor package P. The first temperature sensor 120 may be installed such that an end thereof is exposed on a surface of the blade 113 in contact with the semiconductor package P.

The socket module 130 may include a socket 131 , a housing 133 , a base 135 , a discharge unit 141 , and a second temperature sensor 149 .

The socket 131 supports the semiconductor package P, and corresponds to an electrode thereof and is electrically connected thereto. The socket 131 is mounted on the board module 150 . The socket 131 is a component constituting the semiconductor package test apparatus, but in the socket test apparatus, it is not a component thereof, but a test object.

The housing 133 is mounted on the substrate module 150 while covering the edge region of the socket 131 . The housing 133 has a bowl shape that is opened to expose the main portion of the socket 131 , and accommodates the semiconductor package P therein. The shape of the housing 133 causes the semiconductor package P to be aligned with the socket 131 .

The base 135 is disposed to face the pusher module 110 and may generally have a plate shape. Accordingly, the pusher module 110 is disposed on the upper side of the base 135 , and the substrate module 150 on which the socket 131 and the housing 133 are mounted is positioned on the lower side thereof. An alignment hole 136 may be formed in the base 135 to receive the alignment pin 112 .

In addition, a chamber 137 open toward the pusher module 110 and the socket 131 may be formed in the center of the base 135 . This chamber 137 is a space accommodating the blade 113 of the pusher module 110, and also a space accommodating the housing 133 (and the socket 131).

The discharge unit 141 is configured to discharge a fluid in a set temperature range to the chamber 137 so that the fluid applies a temperature stress to the socket 131 . The fluid is provided from the fluid providing module 190 . To this end, the discharge unit 141 may have a connector 143 connected to the fluid providing module 190 . The connector 143 has the same shape as a fitting, and may be mounted on an edge region of the base 135 . The discharge unit 141 may also have a hollow channel 145 connecting the connection port 143 and the chamber 137 . The hollow channel 145 may extend inside the base 135 . The hollow channel 145 may be connected to only one side side of the chamber 137 .

The second temperature sensor 149 is configured to measure the temperature of the socket 131 subjected to temperature stress in the fluid. The second temperature sensor 149 may be mounted in a groove formed in the base 135 . The second temperature sensor 149 may indirectly measure its temperature through the base 135 even though it does not come into contact with the socket 131 .

The substrate module 150 is a target to which the socket 131 and the housing 133 are installed, and is configured to input electricity to the socket 131 .

The control module 170 is a processor for controlling the heating unit 117 , the cooling unit 119 , the substrate module 150 , the fluid providing module 190 , and the like. The control module 170 controls the substrate module 150 to adjust an electrical input to the socket 131 . In addition, based on the detection result of the first temperature sensor 120 , the operation of the heating unit 117 and the cooling unit 119 is controlled. Further, based on the second temperature sensor 149 , the operation of the fluid providing module 190 is controlled.

The fluid providing module 190 is configured to provide the fluid to the discharging unit 141 . Here, the temperature range at which the fluid acts may be -60 °C to 150 °C. In order to provide a low-temperature fluid among these fluids, the fluid providing module 190 may have a liquid nitrogen tank. Furthermore, the fluid providing module 190 may include a dry air tank and a heater for heating the dry air thereof in order to provide a high-temperature fluid.

According to this configuration, in the socket test apparatus, the socket 131 to be tested is mounted on the substrate module 150 using the housing 133 , and the socket 131 and the housing 133 are formed in the chamber 137 . ) to be put into In that state, the pusher module 110 descends so that the blade 113 electrically connects the semiconductor package P to the socket 131 . In this state, the control module 170 controls the fluid providing module 190 to apply a temperature stress to the socket 131 , so that the fluid in the set temperature range is discharged to the chamber 137 through the discharge unit 141 . make it The socket 131 serves to electrically connect the semiconductor package P and the substrate module 150 under such a temperature stress environment. The control module 170 measures whether the electrical characteristics of the socket 131 at this time, for example, a change in its resistance, and determines whether the socket 131 is a good product.

In this process, the semiconductor package P may be repeatedly used to test the plurality of sockets 131 , but several may be used alternately to prevent the electrodes thereof from being damaged due to repeated use. In addition, the semiconductor package P for this purpose is limited to those determined as good products through a preliminary test. In addition, the heating unit 117 and the cooling unit 119 of the pusher module 110 are difficult to apply a temperature stress to the socket 131, so that they do not work.

In contrast, in the semiconductor package test apparatus, in a state where the blade 113 of the pusher module 110 presses the socket 131 , the control module 170 controls the heating unit 117 and/or the cooling unit 119 . to apply temperature stress to the semiconductor package P through the blade 113 . In this case, the temperature stress by the heating unit 117 and the cooling unit 119 is applied only to the upper surface of the semiconductor package P. To compensate for this, the control module 170 may operate the fluid providing module 190 so that the discharging unit 141 discharges the fluid. In this case, the fluid also affects the bottom side of the semiconductor package P while acting on the socket 131 . This makes it possible to apply a direct and three-dimensional temperature stress to the semiconductor package P. The control module 170 measures the electrical characteristics of the semiconductor package P at this time to determine whether the semiconductor package P is defective. Here, the socket 131 to be used is determined to be a good product in advance through another test device, and may be repeatedly used from several thousand to tens of thousands of times depending on its lifespan.

The main structure of the socket module 130 in the above test apparatus 100 will be described with reference to FIGS. 3 and 4 . Here, FIG. 3 is a cut-away perspective view of the assembly state of the socket module 130 of FIG. 1 , and FIG. 4 is a part of the base 135 as viewed from the bottom side of the base 135 of FIG. 3 , the chamber 137 part is a perspective view.

Referring to FIG. 3 , the socket 131 and the housing 133 may approach and be inserted into the chamber 137 of the base 135 from the bottom side of the base 135 . In this case, the upper surface of the housing 133 comes into contact with the lower surface (ceiling surface 139a) of the chamber 137 .

The socket 131 positioned at the lower side of the housing 133 is positioned at the lowest level of the chamber 137 . The semiconductor package P supported by the socket 131 and positioned inside the housing 133 is also positioned at the lower level of the chamber 137 .

For this socket 131 and housing 133 , the hollow channel 145 may be located generally at a level corresponding to the middle portion of the housing 133 .

Referring to FIG. 4 , the chamber 137 may be divided into a first space 138 and a second space 139 . Based on the vertical direction of the base 135 , the first space 138 is located at an upper portion close to the pusher module 110 , and the second space 139 is located at a lower portion of the substrate module 150 .

Also, compared to the first space 138 , the second space 139 may have a larger cross-sectional area. If the first space 138 is for accommodating or passing the blade 113 and the semiconductor package P of the pusher module 110 , the second space 139 is for accommodating the socket 131 and the housing 133 . it is for

The second space 139 may be defined by a ceiling surface 139a and a wall surface 139b. The upper surface of the housing 133 is in contact with the ceiling surface 139a. Furthermore, the side surface of the housing 133 faces the wall surface 139b. The outlet 145' of the hollow channel 145 is exposed on the wall surface 139b.

In order to flow the fluid discharged into the chamber 137 through the outlet 145 ′ to the socket 131 despite the housing 133 , a distribution channel 147 is formed in the base 135 . The distribution channel 147 may have a first accumulation part 147a, a second accumulation part 147b, and a connection part 147c.

The first accumulation portion 147a is concavely formed to correspond to the outlet 145' of the wall surface 139b. The first accumulation portion 147a may be formed to extend from a lower portion to an upper portion of the wall surface 139b, for example. The fluid discharged from the outlet 145' is accumulated in the first accumulation part 147a, and the fluid flows over the upper surface of the housing 133 or flows toward the bottom of the housing 133 in the socket 131. Temperature stress can be applied.

The second accumulating part 147b may be concavely formed on the opposite side of the first accumulating part 147a among the wall surfaces 139b. Similarly to the first accumulation portion 147a, the second accumulation portion 147b may also extend from the lower portion to the upper portion of the wall surface 139b. The second accumulation portion 147b is located farthest from the outlet 145 ′, so that insufficient fluid is accumulated in the region, thereby affecting the socket 131 .

Furthermore, the connecting portion 147c is configured to connect the fluid accumulated in the first accumulation portion 147a to flow to the second accumulation portion 147b. The connection portion 147c, specifically, may be concavely formed in the ceiling surface 139a. Furthermore, the connection part 147c may be formed to extend in a concave shape along the circumference of the first space 138 . Accordingly, a flow path is formed between the ceiling surface 139a and the upper surface of the housing 133 by the connection part 147c.

Finally, a state in which the pusher module 110 is in contact with the socket module 130 will be described with reference to FIG. 5 .

5 is a cut-away perspective view of the main part showing a state in which the pusher module 110 of FIG. 1 is in contact with the socket module 130 .

Referring to this figure, as the pusher module 110 descends, its blade 113 is inserted into the chamber 137 . The semiconductor package P adsorbed to the bottom surface of the blade 113 is connected to the socket 131 while being accommodated in the housing 133 .

In this state, the fluid discharged into the chamber 137 by the discharge unit 141 passes through the inner space of the housing 133 through the distribution channel 147 to apply a temperature stress to the socket 131 .

In this case, air in the chamber 137 may be discharged into a gap between the base 135 and the body 111 through the free space between the chamber 137 and the blade 113 . However, this may be blocked by the blocking member 115 being disposed to close the gap.

The semiconductor package test apparatus and the socket test apparatus for semiconductor package test as described above are not limited to the configuration and operation method of the above-described embodiments. The above embodiments may be configured so that various modifications may be made by selectively combining all or part of each of the embodiments.

100: test device 110: pusher module
111: blade 115: blocking member
130: socket module 131: socket
133: housing 135: base
141: discharge unit 150: substrate module
170: control module 190: fluid providing module

Claims (13)

a socket module having a housing for accommodating a semiconductor package and aligning the semiconductor package with the socket while being coupled to the socket;
a substrate module supporting the socket and inputting electricity to the socket;
a pusher module for pressing a semiconductor package against the socket so that the semiconductor package is electrically connected to the socket;
a fluid providing module for providing a fluid within a set temperature range for applying temperature stress to the socket module to the socket module; and
and a control module electrically connected to the substrate module and measuring electrical characteristics of the socket in a state in which the socket is subjected to temperature stress due to the influence of the fluid,
The socket module is
a base opening toward the pusher module and having a chamber in which the socket is locatable, the base facing the pusher module; and
It communicates with the fluid providing module and has a hollow channel extending inside the base, and flows toward the socket through an outlet of the hollow channel formed on a wall surface defining the chamber of the base to cause temperature stress in the socket. Socket test apparatus for testing a semiconductor package further comprising a discharge unit for discharging the fluid to the chamber to apply a.
According to claim 1,
The chamber is
a first space into which the pusher module is inserted to advance toward the socket; and
and a second space having a larger cross-sectional area than the first space and accommodating the housing,
The second space is
In a state in which the pusher module is spaced apart from the base, the socket test apparatus is positioned on the opposite side of the pusher module with respect to the first space.
3. The method of claim 2,
The discharge unit is
Socket test apparatus for testing a semiconductor package, including a hollow channel extending from the inside of the base and communicating with the chamber.
4. The method of claim 3,
The discharge unit is
The socket test apparatus for semiconductor package testing, further comprising a distribution channel formed concavely on a surface of the base defining the chamber to flow the fluid discharged from the hollow channel to the socket beyond the housing.
5. The method of claim 4,
The distribution channel is
and a first accumulation part concavely formed in a portion of the base corresponding to the outlet of the hollow channel in an inner wall facing the housing.
6. The method of claim 5,
The distribution channel is
The socket test apparatus for testing a semiconductor package, further comprising a second accumulating part concavely formed in a portion of the base opposite to the outlet of the hollow channel among the inner wall facing the housing to accumulate the fluid.
7. The method of claim 6,
The distribution channel is
and a connector connecting the fluid accumulated in the first accumulation part to flow to the second accumulation part.
8. The method of claim 7,
The connection part,
A socket test apparatus for testing a semiconductor package, which is formed concavely in a ceiling surface defining the second space of the base.
9. The method of claim 8,
The connection part,
A socket test apparatus for testing a semiconductor package that is formed to extend along a circumferential direction of the first space from the ceiling surface.
According to claim 1,
The pusher module is
body;
a blade protruding from the body and inserted into the chamber to press the semiconductor package against the socket; and
and a blocking member protruding from the body in a shape surrounding the blade and blocking a gap between the base and the body.
a socket module having a socket;
a substrate module supporting the socket and inputting electricity to the socket;
a pusher module for pressing a semiconductor package against the socket to be electrically connected to the socket;
a fluid providing module for providing a fluid within a set temperature range for applying temperature stress to the socket module to the socket module; and
A control module electrically connected to the substrate module and configured to measure electrical characteristics of the semiconductor package in a state in which the semiconductor package is subjected to temperature stress by the pusher module and the fluid providing module,
The pusher module is
a blade contacting the semiconductor package to press the semiconductor package to the socket;
a heating unit for heating the semiconductor package through the blade to generate the temperature stress; and
a cooling unit for cooling the semiconductor package through the blade to generate the temperature stress;
The socket module is
a base opening toward the pusher module and having a chamber in which the socket is locatable, the base facing the pusher module; and
It communicates with the fluid providing module and has a hollow channel extending inside the base, and flows toward the socket through an outlet of the hollow channel formed on a wall surface defining the chamber of the base to cause temperature stress in the socket. Further comprising a discharging unit discharging the fluid to the chamber to apply a semiconductor package test apparatus.
12. The method of claim 11,
The pusher module is
a body on which the blade is installed to protrude; and
Further comprising a blocking member protruding from the body in a shape surrounding the blade and blocking a gap between the socket module and the body.
12. The method of claim 11,
The socket module is
and a housing disposed on the socket to receive the semiconductor package and align with the socket;
The chamber is
a first space into which the pusher module is inserted to advance toward the socket; and
and a second space having a larger cross-sectional area than the first space and accommodating the housing,
The second space is
In a state in which the pusher module is spaced apart from the base, it is positioned on the opposite side of the pusher module with respect to the first space.

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