KR102328233B1 - Ceramic member for semiconductor exposure apparatus - Google Patents
Ceramic member for semiconductor exposure apparatus Download PDFInfo
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- KR102328233B1 KR102328233B1 KR1020210072948A KR20210072948A KR102328233B1 KR 102328233 B1 KR102328233 B1 KR 102328233B1 KR 1020210072948 A KR1020210072948 A KR 1020210072948A KR 20210072948 A KR20210072948 A KR 20210072948A KR 102328233 B1 KR102328233 B1 KR 102328233B1
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Abstract
Description
본 발명은 반도체 노광 장비용 세라믹 부재에 관한 것으로, 보다 상세하게는 회로 패턴이 형성된 마스크에 빛을 통과시켜 감광액 막이 형성된 웨이퍼 표면에 회로 패턴을 그리는 작업인 노광 공정에 있어, 웨이퍼 등 기판이 놓이는 진공척이나 정전척과 같은 부재에 적용될 수 있는 반도체 노광 장비용 세라믹 부재에 관한 것이다.The present invention relates to a ceramic member for semiconductor exposure equipment, and more particularly, in the exposure process of drawing a circuit pattern on the surface of a wafer on which a photoresist film is formed by passing light through a mask on which a circuit pattern is formed, a vacuum in which a substrate such as a wafer is placed The present invention relates to a ceramic member for semiconductor exposure equipment that can be applied to a member such as a chuck or an electrostatic chuck.
노광(Stepper Exposure)이라는 것은 마스크에 빛을 통과시켜 웨이퍼에 회로를 그려 넣는 공정으로서, 반도체 공정에 있어 고집적 회로를 프린팅하기 위해 흔히 사용된다.Stepper exposure is a process of drawing circuits on a wafer by passing light through a mask, and is often used to print highly integrated circuits in semiconductor processes.
즉, 노광은 흔히 카메라 셔터로 빛을 조절하는 노출(exposure)과 동의어로 쓰이지만, 반도체 공정에서의 노광은 빛을 선택적으로 조사하는 과정을 일컫는 용어로서, 반도체 노광 공정은 회로 패턴이 담긴 마스크에 빛을 통과시켜, 감광액 막이 형성된 웨이퍼 표면에 회로 패턴을 그리는 작업을 의미한다.In other words, although exposure is often used synonymously with exposure that controls light with a camera shutter, exposure in the semiconductor process refers to the process of selectively irradiating light. It refers to the operation of drawing a circuit pattern on the wafer surface on which the photoresist film is formed by passing light through it.
부언하면, 웨이퍼 위쪽에 마스크를 놓고 빛을 쪼아 주면 회로 패턴을 통과한 빛이 웨이퍼에 회로 패턴을 그대로 옮기게 되며, 이 과정은 노광장비로 불리는 스태퍼(Stepper)를 통해 진행되는데, 스태퍼에 마스크를 넣고 빛을 투과해, 감광액이 칠해진 웨이퍼 위에 미세한 전자회로 그림이 만들어지도록 하는 것이다.In addition, if you put a mask on top of the wafer and shine light, the light passing through the circuit pattern transfers the circuit pattern to the wafer as it is, and this process proceeds through a stepper called exposure equipment. This is to make a microscopic electronic circuit picture on the wafer coated with the photoresist by putting light through it.
이때, 웨이퍼와 같은 운반체 기판을 특정 공정이 진행되는 동안 파지 또는 고정 지지하며 해당 기판이 놓이는 수단으로서 진공척이나 정전척과 같은 척(Chuck)이 사용된다.In this case, a chuck such as a vacuum chuck or an electrostatic chuck is used as a means for holding or fixing and supporting a carrier substrate such as a wafer during a specific process and placing the substrate.
반도체나 디스플레이 그 밖의 기판 공정에서 사용되는 척은 기판이 놓이고, 진공이나 정전 기능에 의해 기판을 고정하는 기능을 수행함과 동시에, 단계 작업이 종료된 기판이 다음 공정으로 이송되고 새로운 대상 기판이 놓이는 반복적인 과정을 통해서 운반체의 오염, 부품의 파손을 방지하고 높은 수명을 가질 수 있도록 하기 위해 내마모성이 우수한 세라믹 재료로 된 것을 사용하는 것이 바람직하다.A chuck used in semiconductor, display, and other substrate processes serves to place a substrate and fix the substrate by vacuum or electrostatic functions. It is preferable to use a ceramic material with excellent wear resistance in order to prevent contamination of the carrier and damage to parts through repeated processes and to have a high lifespan.
반도체 및 디스플레이 장비, LED 액정장치의 제조 공정에 사용되는 세라믹 부재의 경우 가공성 및 내마모성에서 최적화된 재료로서 알루미나 세라믹이 주로 사용되고 있으나, 소재 자체의 색상은 흰색 또는 아이보리색이 주류로서, 광원 주위나 초점 주위 부품으로서 노광장비용으로 사용될 경우 빛을 반사해 플레어(flare) 노이즈 등을 발생시키는 원인이 될 수 있기 때문에 노광장비용 부재로서는 적합하지 않은 물성을 가지고 있다.In the case of ceramic members used in the manufacturing process of semiconductors, display equipment, and LED liquid crystal devices, alumina ceramics are mainly used as materials optimized for workability and wear resistance. However, the color of the material itself is mainly white or ivory, around the light source or focus When used as a peripheral part for exposure equipment, it has properties that are not suitable as a member for exposure equipment because it can reflect light and cause flare noise.
따라서, 현재의 노광장비용 척은 알루미늄 금속을 아노다이징 처리한 재료를 사용하고 있으나, 세라믹과는 비교가 되지 않을 정도로 열 변형에 대한 취약성과 빠른 마모 등으로 미세 선폭을 구현하는 데는 한계가 있다. Therefore, the current chuck for exposure equipment uses a material obtained by anodizing aluminum metal, but there is a limit in realizing a fine line width due to its vulnerability to thermal deformation and rapid wear to the extent that it cannot be compared with ceramic.
알루미나(Al2O3) 세라믹은 알루미나 분말을 고도의 기술로 정제한 것을 원료로 하여 제조한 무기소재를 의미하며, 보다 세분되는 파인세라믹스의 원재로 사용되는 고순도 알루미나 분말은 99.5% 이상의 순도를 가지며, 평균 입자크기가 1㎛ 이하인 미세한 분말로서, 소결이 비교적 잘되는 특성을 가지고 있다.Alumina (Al 2 O 3 ) ceramic refers to an inorganic material manufactured by using high-tech refined alumina powder as a raw material. , It is a fine powder with an average particle size of 1 μm or less, and has the characteristics of relatively good sintering.
이와 같은 고순도 분말로 제조된 알루미나 세라믹은 뛰어난 내약품성을 갖는 바, 불활성 상태이기 때문에 화학적 침식에 높은 저항성을 가져, 산, 알카리, 유기용제 등에 거의 영향을 받지 않는다. 또한 알루미나 세라믹은 치밀하고 경도가 높은 물질로서 일반적인 금속재료보다 15 내지 20배 높은 내마모 특성을 보유하고 있으며, 전기절연체로서 고온에서의 전기절연성 및 고전압에 대한 절연내력이 크며, 강유전성과 낮은 유전 손실률을 보유하고 있다. 아울러 알루미나 세라믹은 우수한 내열성을 가져 최고 사용온도는 다른 대부분의 금속이 갖는 용융점을 초과하며, 연속 사용 시에도 1,600 내지 1,700℃ 온도까지도 사용이 가능하다. Alumina ceramics made of such high-purity powder have excellent chemical resistance, and since they are in an inert state, they have high resistance to chemical erosion, and are hardly affected by acids, alkalis, organic solvents, and the like. In addition, alumina ceramic is a dense and high hardness material, and has 15 to 20 times higher wear resistance than general metal materials. holds the In addition, alumina ceramics have excellent heat resistance, and the maximum operating temperature exceeds the melting point of most other metals, and it can be used even at a temperature of 1,600 to 1,700° C. even in continuous use.
따라서, 알루미나 세라믹은 각종 전자부품, 반도체 공정, 우주선, 자동차 엔진 뿐만 아니라 인체의 골격이식에 따른 인체 바이오산업에까지 그 적용 영역이 매우 광범위하다.Accordingly, alumina ceramics have a very wide application area to various electronic components, semiconductor processes, spacecraft, automobile engines, as well as human bioindustry following human skeleton transplantation.
즉, 전술한 바와 같이 반도체 제조 공정에 있어 알루미나 세라믹은 내화학성, 화학안정성, 내열성, 절연성 등의 유리한 물성들을 구비하고 있으므로, 반도체 노광 장비용 부재의 재료로서 사용될 수 있기 위해서는 상기한 유리한 물성들과 함께 진공척이나 정전척과 같은 특정 구조의 척(Chuck) 형상으로 성형성이 우수하고, 결정적으로 노광공정에서 빛 반사로 인한 문제점을 방지하기 위해, 노광공정 시 사용되는 자외선-가시광선 영역에서 반사율을 최소화(혹은 흡수율 최대화)할 수 있는 것이 바람직하다.That is, since the alumina ceramic has advantageous physical properties such as chemical resistance, chemical stability, heat resistance, and insulation in the semiconductor manufacturing process as described above, in order to be used as a material for a member for semiconductor exposure equipment, the above advantageous properties and Together with a chuck shape of a specific structure such as a vacuum chuck or an electrostatic chuck, it has excellent formability and, crucially, to prevent problems due to light reflection in the exposure process, the reflectance is reduced in the ultraviolet-visible region used in the exposure process. It is desirable to be able to minimize (or maximize absorption rate).
일본등록특허공보 제6141756호나 한국등록특허공보 제1168863호 등에는 반사율이 낮거나 착색제가 함유된 세라믹 진공척 등에 대한 기술 내용이 개시되어 있으나, 가공성 및 반사율을 동시에 최적화할 수 있는 기술에 대한 내용은 기재되어 있지 않은 등, 아직까지는 이를 위한 최적화된 연구 결과가 제시되고 있지 못한 실정이다.Japanese Patent Publication No. 6141756 and Korean Patent Publication No. 1168863, etc. disclose technical details on ceramic vacuum chucks with low reflectance or containing colorants. It has not been described, and so far, the optimized research results for this have not been presented.
본 발명은 전술한 종래 반도체 노광장비용 세라믹 부재로서로서의 문제점을 해소하기 위하여, 노광 공정에서 패턴 전사의 정밀도를 높이기 위해 낮은 반사율을 가지면서도, 그 밖에 기본적으로 요구되는 물성 및 척 형상 가공성이 우수한 반도체 노광장비용 세라믹 부재 및 그 제조방법을 제공하는 것을 목적으로 한다.In order to solve the above-mentioned problems as a ceramic member for conventional semiconductor exposure equipment, the present invention provides a semiconductor having a low reflectance in order to increase the precision of pattern transfer in an exposure process, and having excellent other basic physical properties and chuck shape processability. An object of the present invention is to provide a ceramic member for exposure equipment and a method for manufacturing the same.
상기 목적을 달성하기 위하여, 본 발명에 따른 반도체 노광장비용 세라믹 부재는, Al2O3를 주요 성분으로 제조되는 반도체 노광장비용 세라믹 부재로서, 원료단계에서 투입되는 착색제로서 분말상 Co2O3를 포함함과 동시에, 분말상의 TiO2, Fe2O3, MnO2, 및 ZnO에서 선택된 적어도 1 이상의 추가 착색제를 더욱 포함하며, 상기 Co2O3 100중량부에 대해 상기 추가 착색제는 168 내지 323중량부이다.In order to achieve the above object, the ceramic member for semiconductor exposure equipment according to the present invention is a ceramic member for semiconductor exposure equipment manufactured with Al 2 O 3 as a main component, and powdery Co 2 O 3 as a colorant input in the raw material stage. At the same time, it further comprises at least one additional colorant selected from TiO 2 , Fe 2 O 3 , MnO 2 , and ZnO in powder form, and the additional colorant is 168 to 323 parts by weight based on 100 parts by weight of Co 2 O 3 is wealth
이때, 상기 추가 착색제로서 TiO2, Fe2O3, MnO2 및 ZnO를 동시에 포함하며, 상기 Co2O3 100중량부에 대해 TiO2 50~88중량부, Fe2O3 75~125중량부, MnO2 37~100중량부, ZnO 6~10중량부일 수 있다.In this case, as the additional colorant, TiO 2 , Fe 2 O 3 , MnO 2 and ZnO are simultaneously included, and 50 to 88 parts by weight of TiO 2 , 75 to 125 parts by weight of Fe 2 O 3 relative to 100 parts by weight of Co 2 O 3 , MnO 2 37-100 parts by weight, ZnO 6-10 parts by weight.
이때, 상기 착색제 및 상기 추가 착색제는 전체 출발원료 전체 중량에 대하여 22~41중량%일 수 있다.In this case, the colorant and the additional colorant may be 22 to 41 wt% based on the total weight of the total starting material.
이때, 상기 추가 착색제로서 분말상의 TiC를 더욱 포함할 수 있다.In this case, powdery TiC may be further included as the additional colorant.
이때, 소결 결과 제조된 소결체의 이론 밀도가 파인알루미나 세라믹스 대비 98% 이상일 수 있다.In this case, the theoretical density of the sintered body manufactured as a result of sintering may be 98% or more compared to the fine alumina ceramics.
한편, 본 발명에 따른 반도체 노광장비용 세라믹 부재의 제조방법은, 분말상의 Al2O3와 Co2O3를 포함하고, 분말상의 TiO2, Fe2O3, MnO2 및 TiC로 이루어진 군에서 선택된 어느 하나 이상의 착색제 성분을 용매와 혼합하여 슬러리 제조하는 혼합 슬러리 제조 단계; 상기 혼합 슬러리 제조에서 제조된 슬러리를 일정한 형상으로 성형하고 건조하는 성형 건조단계; 상기 성형 건조단계 이후, 건조된 대상체를 적어도 1,000℃ 이상의 온도로 소결하는 소결 단계;를 포함한다.Meanwhile, the method for manufacturing a ceramic member for semiconductor exposure equipment according to the present invention includes powdery Al 2 O 3 and Co 2 O 3 , and powdery TiO 2 , Fe 2 O 3 , MnO 2 and TiC from the group consisting of A mixed slurry preparation step of preparing a slurry by mixing one or more selected colorant components with a solvent; a molding drying step of molding and drying the slurry prepared in the mixed slurry preparation into a predetermined shape; After the molding and drying step, a sintering step of sintering the dried object at a temperature of at least 1,000 °C or more; includes.
이때, 상기 슬러리 제조 단계에, 분말상의 SiO2를 더욱 포함할 수 있다.In this case, in the slurry preparation step, powdery SiO 2 may be further included.
이때, 상기 소결 단계는 대기압 또는 감압 분위기에서 1,200 내지 1,400℃의 온도에서 1~3 시간 동안 수행될 수 있다.In this case, the sintering step may be performed for 1 to 3 hours at a temperature of 1,200 to 1,400° C. in an atmospheric pressure or reduced pressure atmosphere.
전술한 바와 같은 구성에 의해, 본 발명에 따른 반도체 노광장비용 세라믹 부재는 다음과 같은 효과를 가진다.According to the configuration as described above, the ceramic member for semiconductor exposure equipment according to the present invention has the following effects.
반도체 공정에서 기판을 유지, 고정하기 위한 척으로서 제조될 경우 내마모성, 내화학성 등 물성이 매우 우수한 알루미나 세라믹으로 제조되면서도, 노광 공정에 있어 빛 반사에 의한 플레어 노이즈 등을 방지하여 패턴 전사의 정밀도를 높일 수 있는 노광장비용 세라믹 부재를 제공할 수 있다.When manufactured as a chuck for holding and fixing the substrate in the semiconductor process, it is made of alumina ceramic with excellent physical properties such as abrasion resistance and chemical resistance. It is possible to provide a ceramic member for exposure equipment that can be used.
도 1은 본 발의 실험예1에 의해 제조된 시료들의 사진이다.1 is a photograph of samples prepared according to Experimental Example 1 of the present invention.
전술한, 그리고 추가적인 본 발명의 양상들은 첨부된 도면을 참조하여 설명되는 바람직한 실시예 및 실험예들을 통하여 더욱 명백해질 것이다. 이하에서는 본 발명의 이러한 실시예 및 실험예를 통해 당업자가 용이하게 이해하고 재현할 수 있도록 상세히 설명하기로 한다.The above and further aspects of the present invention will become more apparent through preferred embodiments and experimental examples described with reference to the accompanying drawings. Hereinafter, it will be described in detail so that those skilled in the art can easily understand and reproduce through these examples and experimental examples of the present invention.
본 발명은 반도체 노광장비용 세라믹 부재 소재에 적합한 최적의 배합조건을 수많은 실험을 통하여 도출하고, 이러한 최적의 배합조건으로 제조된 반도체 노광장비용 세라믹 부재로서의 알루미나 세라믹 소결체의 특성을 검증함으로써 블랙화(빛의 반사율을 최소화한다는 의미)에 효과적이며, 알루미나 최종 소결체의 물성이 우수한 반도체 노광장비용 세라믹 부재 소재를 개발하고자 한다.The present invention derives the optimal mixing conditions suitable for the ceramic member material for semiconductor exposure equipment through numerous experiments, and by verifying the characteristics of the alumina ceramic sintered body as a ceramic member for semiconductor exposure equipment manufactured under these optimal mixing conditions, blackening ( It is effective in minimizing the reflectance of light) and aims to develop a ceramic member material for semiconductor exposure equipment with excellent physical properties of the alumina final sintered body.
Al2O3에 MnO2 또는 TiO2가 일정 이상으로 첨가될 경우 입계 이동이 활발히 일어나 과대 입성장을 유발한다고 보고되고 있다. 따라서, 본 발명에서는 원료물질인 Al2O3에 최적량의 MnO2 또는 TiO2를 첨가하고, 최상의 물성과 블랙화 및 치밀한 구조의 반도체 노광장비용 세라믹 부재를 제조하기 위하여 최적의 성분과 배합비를 도출하고자 하였다.It has been reported that when MnO 2 or TiO 2 is added to Al 2 O 3 at a certain level or more, grain boundary migration occurs actively to induce excessive grain growth. Therefore, in the present invention, an optimum amount of MnO 2 or TiO 2 is added to Al 2 O 3 as a raw material, and the optimum component and mixing ratio are determined to produce a ceramic member for semiconductor exposure equipment having the best physical properties and blackening and dense structure. wanted to derive.
이러한 본 발명의 반도체 노광장비용 세라믹 부재의 일 예로서는 출발원료인 Al2O3 원료에 착색제로 TiO2, Fe2O3 , MnO2 및 Co2O3 중 선택된 어느 하나 이상의 성분 및 SiO2를 용매상에서 혼합하여 슬러리를 얻고, 이 슬러리를 건조하고 소결하여 제조되는 것을 특징으로 한다.As an example of such a ceramic member for semiconductor exposure equipment of the present invention, one or more components selected from among TiO 2 , Fe 2 O 3 , MnO 2 and Co 2 O 3 and SiO 2 as a colorant are added to Al 2 O 3 raw material as a starting material as a solvent. It is characterized in that it is prepared by mixing in the phase to obtain a slurry, and drying and sintering the slurry.
먼저, 출발원료인 알루미나 세라믹 원료로는 서브마이크론(sub-micron) 크기의 Al2O3 분말을 사용할 수 있다. First, an Al 2 O 3 powder having a size of sub-micron may be used as an alumina ceramic raw material as a starting material.
광흡수율의 증가를 위해 첨가되는 착색제로는 TiO2, Fe2O3, MnO2 등을 사용할 수 있다. 특히, 가장 효과적인 블랙화와 10% 미만의 반사율을 가지는 반도체 노광장비용 세라믹 부재를 얻기 위하여는 MnO2와 TiO2 및 Fe2O3을 함께 사용하는 것이 더욱 좋다. 특히, 본 발명은 상술한 착색제로서 가장 중요한 성분으로서 Co2O3 를 사용한다. Co2O3 를 사용할 경우 알루미나의 색상에 대해서는 후술하기로 한다. As a colorant added to increase light absorption, TiO 2 , Fe 2 O 3 , MnO 2 , etc. may be used. In particular, in order to obtain a ceramic member for semiconductor exposure equipment having the most effective blackening and reflectance of less than 10%, it is more preferable to use MnO 2 , TiO 2 and Fe 2 O 3 together. In particular, the present invention uses Co 2 O 3 as the most important component as the above-mentioned colorant. When using Co 2 O 3 , the color of alumina will be described later.
산화코발트(Co2O3)는 특히 소결공정에서 자신은 산화와 동시에 환원작용을 일으켜 출발원료인 알루미나(Al2O3)가 흑색으로 발색하는데 기여하며, 환원강도는 기존에 착색제로서 사용되는 티타늄카바이드(TiC), 산화아연(ZnO) 보다도 강력한 가운데 이들 물질이 서로 공존하는데서 오는 상승효과 때문에 흑화 정도를 더욱 심화시키게 된다.In particular, cobalt oxide (Co 2 O 3 ) causes a reduction action at the same time as oxidation itself in the sintering process, thereby contributing to the black color of alumina (Al 2 O 3 ), a starting material, and the reduction strength of titanium used as a colorant in the past While it is stronger than carbide (TiC) and zinc oxide (ZnO), the degree of blackening is further aggravated by the synergistic effect of these materials coexisting with each other.
상기 착색제로서는 산화코발트를 주요 착색제로 사용하며, 그 밖에도 보조 착색제로서 적어도 두 가지 이상의 물질을 조합하여 사용하는 것이 바람직하다. As the colorant, cobalt oxide is used as a main colorant, and in addition, it is preferable to use a combination of at least two or more materials as an auxiliary colorant.
본 발명은 최종 얻어진 반도체 노광장비용 세라믹 부재 소결체의 입성장 억제와 기공 감소 및 균일 방지를 위하여 필요에 따라 SiO2를 추가로 더 첨가할 수도 있다. 상기 SiO2는 반도체 노광장비용 세라믹 부재 제조 시 소결성을 향상시켜 액상소결에 의한 치밀화를 통하여 기공이 억제되고 보다 치밀한 반도체 노광장비용 세라믹 부재 소결체를 얻을 수 있도록 한다. 소결조제는 증류수 혹은 유기용제와 같은 적심제가 첨가되지 않은 알루미나 혼합물의 1 내지 2중량%로 포함되는 것이 바람직하다. According to the present invention, SiO 2 may be further added as necessary to suppress grain growth, reduce pores, and prevent uniformity of the finally obtained ceramic member sintered body for exposure equipment. The SiO 2 improves sinterability when manufacturing a ceramic member for semiconductor exposure equipment, so that pores are suppressed through densification by liquid phase sintering and a denser ceramic member sintered body for semiconductor exposure equipment can be obtained. The sintering aid is preferably included in an amount of 1 to 2% by weight of the alumina mixture to which a wetting agent such as distilled water or an organic solvent is not added.
상기와 같은 성분을 포함하는 혼합 슬러리는 적당한 형상으로 성형하여 이후 건조 단계를 거치고, 필요한 경우 후 성형 과정을 거쳐 소결을 통하여 소결체로 얻어진다. 즉, 소결 이전에도 필요에 따라 건조물을 목적하는 형태로 성형하는 과정을 실시할 수도 있음은 물론이다.The mixed slurry containing the above components is molded into an appropriate shape, then subjected to a drying step, and, if necessary, a post-molding process and sintered to obtain a sintered body. That is, it is of course also possible to carry out the process of forming the dried product into a desired shape before sintering if necessary.
소결은 공기분위기 또는 진공분위기, 즉 대기압이나 대기압보다 감압된 분위기에서 1,200 내지 1,400℃의 온도에서 1 ~ 3 시간 동안 수행할 수 있다. 상기 온도 범위 보다 낮으면 소결이 불충분하게 일어나고, 그 이상의 온도 범위에서는 과다 액상으로 소결밀도가 감소될 수 있다.The sintering may be performed in an air atmosphere or a vacuum atmosphere, that is, at a temperature of 1,200 to 1,400° C. for 1 to 3 hours at atmospheric pressure or an atmosphere lowered than atmospheric pressure. If it is lower than the above temperature range, sintering occurs insufficiently, and in a temperature range above that, the sintering density may be reduced due to excessive liquid phase.
소결 시에는 혼합 슬러리에 포함된 성분들에 따른 Al2O3 입성장의 영향을 주게 되는데, 본 발명에 따라 제조된 반도체 노광장비용 세라믹 부재 소결체는 Al2O3 입성장이 억제되고, 기공이 감소된 미세구조를 보이게 된다. 특히, 상기 슬러리에 SiO2를 첨가한 경우에는 1,200℃의 온도에서 소결하는 것이 원활한 액상소결에 의한 높은 밀도를 가지는 치밀한 반도체 노광장비용 세라믹 부재 소결체를 제조할 수 있어 더욱 좋다.There there is granted the Al 2 O 3 effect of grain growth in accordance with the component contained in the mixed slurry, a semiconductor furnace square cost ceramic member sintered body made according to the present invention is inhibited sheets of Al 2 O 3 grain growth, the pores are reduced during sintering microstructure is visible. In particular, when SiO 2 is added to the slurry, sintering at a temperature of 1,200° C. is more advantageous because it is possible to manufacture a compact ceramic member sintered body for a dense semiconductor exposure equipment having a high density by liquid-phase sintering.
전술한 바와 같은 본 발명의 제조방법에 따라 제조된 반도체 노광장비용 세라믹 부재는 빛 흡수에 효과적인 블랙 색상을 효과적으로 유지하면서, 10% 미만의 반사율과 이론밀도가 파인알루미나 세라믹스 대비 98% 이상의 치밀도를 가질 수 있다. The ceramic member for semiconductor exposure equipment manufactured according to the manufacturing method of the present invention as described above effectively maintains a black color effective for light absorption, and has a reflectivity of less than 10% and a theoretical density of 98% or more compared to fine alumina ceramics. can have
또한, 본 발명에 따른 반도체 노광장비용 세라믹 부재는 기공이 거의 없는 치밀한 구조를 가지면서도 적절한 가공성을 가지며, 소결밀도, 반사율, 색상, 절연저항(상온), 꺾임강도, 열팽창계수 등의 물성이 우수하다.In addition, the ceramic member for semiconductor exposure equipment according to the present invention has a dense structure with almost no pores and has appropriate workability, and has excellent physical properties such as sintering density, reflectance, color, insulation resistance (room temperature), bending strength, and coefficient of thermal expansion. do.
이하에서는 실험예를 통해 본 발명에 관하여 더욱 상세하게 설명할 것이나. 이들 실험예에서 특정되는 각종 구성 및 수치들은 본 발명의 핵심적 구성요소들을 포함하여 구현된 하나의 예로서만 제시되는 것으로서, 본 발명의 사상을 구현하는 유일한 구성을 예시하는 것은 아니며, 당업자들은 이를 통하여 본 발명의 권리 범위 내에서 다양한 형태의 변형을 가할 수 있음을 인지하여야 한다.Hereinafter, the present invention will be described in more detail through experimental examples. The various configurations and numerical values specified in these experimental examples are presented only as an example implemented including the key components of the present invention, and do not exemplify the only configuration implementing the spirit of the present invention, and those skilled in the art can through this It should be recognized that various types of modifications may be made within the scope of the present invention.
[실험예 1] 시료의 제조[Experimental Example 1] Preparation of samples
본 발명에 따른 반도체 노광장비용 세라믹 부재에 적용될 수 있는 세라믹 재료를, 출발 물질로서 다음과 같은 조성비로 각 6가지의 시료로서 제작하였다.A ceramic material applicable to a ceramic member for semiconductor exposure equipment according to the present invention was prepared as a starting material, each of six samples having the following composition ratios.
시료 1 내지 3은 본 발명에 따른 특징적인 성분들을 포함하되, 그 성분 비를 조금씩 달리하며 제조된 것이고, 시료 4 내지 6은 대조군으로서 종래의 착색제 및 기타 첨가제만을 포함하되, 그 성분 비를 조금씩 달리하여 제조된 것이다.Samples 1 to 3 include the characteristic components according to the present invention, but are prepared with slightly different component ratios, and
각 시료별 성분 및 성분 비율(중량%)은 다음과 같다.Components and component ratios (wt%) for each sample are as follows.
1) 시료별 슬러리 제조1) Preparation of slurry for each sample
상기 모든 성분은 서브마이크론 크기 입도의 분말상으로 선택하였으며, 용매로서 물을 35중량% 혼합함으로써 슬러리를 형성시켰다.All of the above components were selected as a powder having a particle size of sub-micron, and a slurry was formed by mixing 35% by weight of water as a solvent.
2) 슬러리 성형 및 건조2) Forming and drying the slurry
각각의 슬러리는 비교가 용이하도록 50mmㅧ50mmㅧ10mm 크기의 직육면체 형태로 성형하였으며, 습도 50%~60%, 20℃~30℃의 실온에서 급격한 건조를 막기 위해 얇은 종이로 덮은 상태에서 2주 동안 방치하여 건조시켰다.Each slurry was molded in the shape of a cuboid with a size of 50mm×50mm×10mm for easy comparison, and covered with thin paper to prevent rapid drying at room temperature of 50% to 60% humidity and 20°C to 30°C for 2 weeks. It was left to dry.
3) 소결로에서 소결3) sintering in sintering furnace
건조된 각 시료를 1,300℃로 설정된 대기압 전기로에서 5일 동안 소결하였으며, 도 1에 도시된 바와 같은 형태 및 색상의 시료를 얻었다.Each dried sample was sintered in an atmospheric pressure electric furnace set at 1,300° C. for 5 days, and a sample having a shape and color as shown in FIG. 1 was obtained.
도시된 바와 같이 본 발명에 따른 반도체 노광장비용 부재에 적용하기 위한 시료 1 내지 시료 3의 경우 육안으로 관찰하기에도 식별 가능한 정도의 흑색을 가지는 반면, 시료 4의 경우 엷은 남색을 띄었으며, 시료 5는 짙은 고동색, 시료 6은 엷은 고동색을 띄었다.As shown, Samples 1 to 3 for application to a member for semiconductor exposure equipment according to the present invention had a black level that could be discerned even with the naked eye, whereas
즉, 종래에 널리 알려진 착색제 TiC를 주로 사용하고 본 발명에 따른 주요 착색제인 Co2O3를 포함하지 않은 경우, TiO2와 Fe2O3를 함께 사용하였음에도 육안으로도 흑색으로 보이지 않을 정도임을 확인할 수 있었다.That is, when the conventionally well-known colorant TiC is mainly used and Co 2 O 3 as the main colorant according to the present invention is not included, even though TiO 2 and Fe 2 O 3 are used together, it is confirmed that the color is not black enough to be seen with the naked eye. could
더욱이, 상기 시료들을 적당한 형태로 가공하는 과정에서 통상의 세라믹 가공 장비를 통해 원활히 성형될 수 있음을 확인하였다.Moreover, it was confirmed that the samples can be smoothly formed through conventional ceramic processing equipment in the process of processing the samples into an appropriate shape.
[실험예 2] 반사율 측정[Experimental Example 2] Reflectance measurement
통상 반도체용 노광장비에서 사용되는 파장은 짧게는 200nm 부근에서 가시광선 영역에 이르며, 따라서 360nm ~ 680nm 범위에서 각각의 파장에서의 반사율을 측정하였다.In general, the wavelength used in exposure equipment for semiconductors reaches the visible light region in the shortest vicinity of 200 nm, and therefore the reflectance at each wavelength was measured in the range of 360 nm to 680 nm.
본 실험 결과는 JASCO사의 V-770 UV-Visible/NIR 및 Konica Minolta사의 CM-3799D Spectrophotometer를 사용하여 적분구 액세서리로 반사율을 측정한 결과이다.The results of this experiment are the results of measuring reflectance with an integrating sphere accessory using JASCO's V-770 UV-Visible/NIR and Konica Minolta's CM-3799D Spectrophotometer.
반도체 노광장비용 부재로서 사용되기 위해서는 적어도 8 이하의 반사율이 바람직한 것으로 제시되고 있으며, 상기 실험을 통해, 본 발명에 따른 시료인 시료1 내지 시료3의 경우 대체적으로 우수한 반사율 수치를 보이고 있으며, 특히 자외선 영역에서도 낮은 반사율을 나타내는 것을 확인할 수 있었다.In order to be used as a member for semiconductor exposure equipment, it is suggested that a reflectance of at least 8 is preferable, and through the above experiment, samples 1 to 3, which are samples according to the present invention, show generally excellent reflectance values, and in particular, ultraviolet light. It was confirmed that the reflectance was low even in the region.
반면 시료4 내지 시료6의 경우 육안으로도 충분한 색상이 구현되지 않았던 것을 확인하였던 만큼, 실험을 통해서 측정된 반사율 역시 반도체 노광장비용으로 사용하기에는 지나치게 높은 반사율을 나타내는 것을 확인할 수 있었다.On the other hand, in the case of
상기 실험예를 통해, 본 발명에 따른 반도체 노광장비용 부재의 경우 실험 대상 파장 영역에서 시료1 내지 시료3 모두 대체로 7이하의 반사율을 가지며, 특히 시료1의 경우 노광장비에서 주료 사용될 수 있는 360~480nm 파장 범위에서 6% 이하의 반사율을 가지는 것을 확인할 수 있었다.Through the above experimental example, in the case of the member for semiconductor exposure equipment according to the present invention, all of Samples 1 to 3 generally have a reflectance of 7 or less in the wavelength region to be tested, and in particular, in the case of Sample 1, 360 ~ which can be mainly used in exposure equipment It was confirmed that the reflectance was less than 6% in the 480nm wavelength range.
본 발명은 상기 실험예 및 도면에 도시된 일실시예를 참고로 설명되었으나, 이는 예시적인 것에 불과하며, 본 기술 분야의 통상의 지식을 가진 자라면 이로부터 다양한 변형 및 균등한 타 실시예가 가능하다는 점을 이해할 것이다. Although the present invention has been described with reference to the above experimental examples and one embodiment shown in the drawings, this is only an example, and that various modifications and equivalent other embodiments are possible therefrom by those of ordinary skill in the art. will understand the point.
Claims (3)
반도체 노광 공정에서 반사율을 낮추기 위한 부재로서 사용되며,
원료단계에서 투입되는 착색제로서 분말상 Co2O3를 포함함과 동시에,
상기 추가 착색제로서 TiO2, Fe2O3, MnO2 및 ZnO를 동시에 포함하며, 상기 Co2O3 100중량부에 대해 TiO2 50~88중량부, Fe2O3 75~125중량부, MnO2 37~100중량부, ZnO 6~10중량부인 것을 특징으로 하는, 반도체 노광장비용 세라믹 부재.As a ceramic member for semiconductor exposure equipment manufactured with Al 2 O 3 as a main component,
It is used as a member for lowering the reflectance in the semiconductor exposure process,
At the same time as containing powdery Co 2 O 3 as a colorant input in the raw material stage,
As the additional colorant, TiO 2 , Fe 2 O 3 , MnO 2 and ZnO are simultaneously included, and 50 to 88 parts by weight of TiO 2 , 75 to 125 parts by weight of Fe 2 O 3 , MnO with respect to 100 parts by weight of Co 2 O 3 2 37 to 100 parts by weight, ZnO 6 to 10 parts by weight, a ceramic member for semiconductor exposure equipment.
상기 착색제 및 상기 추가 착색제는 전체 출발원료 전체 중량에 대하여 22~41중량%인 것을 특징으로 하는, 반도체 노광장비용 세라믹 부재.The method of claim 1,
The ceramic member for semiconductor exposure equipment, characterized in that the colorant and the additional colorant are 22 to 41 wt% based on the total weight of the total starting material.
상기 추가 착색제로서 분말상의 TiC를 더욱 포함하는 것을 특징으로 하는, 반도체 노광장비용 세라믹 부재.The method of claim 1,
The ceramic member for semiconductor exposure equipment, characterized in that it further comprises powdery TiC as the additional colorant.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05254922A (en) * | 1992-03-05 | 1993-10-05 | Nippon Seratetsuku:Kk | Colored alumina-base ceramic and its production |
| JPH06141756A (en) | 1992-11-12 | 1994-05-24 | Nippon Flour Mills Co Ltd | Wheat flupr composition for bread and preparation of bread using the composition |
| JP2011168420A (en) * | 2010-02-17 | 2011-09-01 | Kikusui Chemical Industries Co Ltd | Alumina sintered compact and substrate holding board formed by alumina sintered compact |
| KR20110130619A (en) * | 2010-05-28 | 2011-12-06 | 조항선 | Coloured ceramic composition and a method for preparing the same |
| KR101168863B1 (en) | 2009-02-23 | 2012-07-30 | 가부시키가이샤 소딕 | Colored ceramic vacuum chuck and manufacturing method thereof |
| KR20150114616A (en) * | 2014-04-01 | 2015-10-13 | 목포대학교산학협력단 | Method for preparing black alumina |
| JP2018534166A (en) * | 2015-11-09 | 2018-11-22 | センター フォア アブラシブズ アンド リフラクトリーズ リサーチ アンド ディベロップメント ツェー アー エァ エァ デー ゲゼルシャフト ミット ベシュレンクテル ハフツング | Sintered ceramic polishing element having a polycrystalline and flat geometric structure, method of manufacture and use thereof |
| JP2020506863A (en) * | 2017-01-31 | 2020-03-05 | サン−ゴバン サントル ド レシェルシュ エ デテュド ユーロペアン | High density sintered product |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54112649A (en) | 1978-02-22 | 1979-09-03 | Seiko Epson Corp | Conductive ink type thermal printer |
-
2020
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- 2020-12-15 WO PCT/KR2020/018349 patent/WO2022055042A1/en active Application Filing
-
2021
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Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05254922A (en) * | 1992-03-05 | 1993-10-05 | Nippon Seratetsuku:Kk | Colored alumina-base ceramic and its production |
| JPH06141756A (en) | 1992-11-12 | 1994-05-24 | Nippon Flour Mills Co Ltd | Wheat flupr composition for bread and preparation of bread using the composition |
| KR101168863B1 (en) | 2009-02-23 | 2012-07-30 | 가부시키가이샤 소딕 | Colored ceramic vacuum chuck and manufacturing method thereof |
| JP2011168420A (en) * | 2010-02-17 | 2011-09-01 | Kikusui Chemical Industries Co Ltd | Alumina sintered compact and substrate holding board formed by alumina sintered compact |
| KR20110130619A (en) * | 2010-05-28 | 2011-12-06 | 조항선 | Coloured ceramic composition and a method for preparing the same |
| KR20150114616A (en) * | 2014-04-01 | 2015-10-13 | 목포대학교산학협력단 | Method for preparing black alumina |
| JP2018534166A (en) * | 2015-11-09 | 2018-11-22 | センター フォア アブラシブズ アンド リフラクトリーズ リサーチ アンド ディベロップメント ツェー アー エァ エァ デー ゲゼルシャフト ミット ベシュレンクテル ハフツング | Sintered ceramic polishing element having a polycrystalline and flat geometric structure, method of manufacture and use thereof |
| JP2020506863A (en) * | 2017-01-31 | 2020-03-05 | サン−ゴバン サントル ド レシェルシュ エ デテュド ユーロペアン | High density sintered product |
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| Publication number | Publication date |
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| WO2022055042A1 (en) | 2022-03-17 |
| KR102279391B1 (en) | 2021-07-21 |
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