KR102325235B1 - 전자 빔 시스템에서의 수차 정정을 위한 방법 및 시스템 - Google Patents
전자 빔 시스템에서의 수차 정정을 위한 방법 및 시스템 Download PDFInfo
- Publication number
- KR102325235B1 KR102325235B1 KR1020197019547A KR20197019547A KR102325235B1 KR 102325235 B1 KR102325235 B1 KR 102325235B1 KR 1020197019547 A KR1020197019547 A KR 1020197019547A KR 20197019547 A KR20197019547 A KR 20197019547A KR 102325235 B1 KR102325235 B1 KR 102325235B1
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- South Korea
- Prior art keywords
- electro
- electron beam
- deflector assembly
- optical system
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- Prior art date
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- 238000010894 electron beam technology Methods 0.000 title claims abstract description 81
- 230000004075 alteration Effects 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims description 20
- 238000012937 correction Methods 0.000 title description 9
- 230000003287 optical effect Effects 0.000 claims abstract description 33
- 238000004626 scanning electron microscopy Methods 0.000 claims description 19
- 238000001493 electron microscopy Methods 0.000 abstract 1
- 239000006185 dispersion Substances 0.000 description 16
- 238000007689 inspection Methods 0.000 description 8
- 230000021715 photosynthesis, light harvesting Effects 0.000 description 8
- 238000003384 imaging method Methods 0.000 description 7
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
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- 201000009310 astigmatism Diseases 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1472—Deflecting along given lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/1508—Combined electrostatic-electromagnetic means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/153—Correcting image defects, e.g. stigmators
- H01J2237/1534—Aberrations
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/371,557 | 2016-12-07 | ||
| US15/371,557 US10090131B2 (en) | 2016-12-07 | 2016-12-07 | Method and system for aberration correction in an electron beam system |
| PCT/US2017/064958 WO2018106833A1 (en) | 2016-12-07 | 2017-12-06 | Method and system for aberration correction in electron beam system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20190085157A KR20190085157A (ko) | 2019-07-17 |
| KR102325235B1 true KR102325235B1 (ko) | 2021-11-10 |
Family
ID=62243018
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020197019547A Active KR102325235B1 (ko) | 2016-12-07 | 2017-12-06 | 전자 빔 시스템에서의 수차 정정을 위한 방법 및 시스템 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10090131B2 (https=) |
| EP (1) | EP3552222A4 (https=) |
| JP (2) | JP2019537228A (https=) |
| KR (1) | KR102325235B1 (https=) |
| CN (1) | CN110036456B (https=) |
| TW (1) | TWI743262B (https=) |
| WO (1) | WO2018106833A1 (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10338013B1 (en) * | 2018-01-25 | 2019-07-02 | Kla-Tencor Corporation | Position feedback for multi-beam particle detector |
| KR102662658B1 (ko) | 2019-03-27 | 2024-05-03 | 에이에스엠엘 네델란즈 비.브이. | 멀티빔 검사 장치에서 2차 빔의 정렬을 위한 시스템 및 방법 |
| KR102857915B1 (ko) * | 2020-07-20 | 2025-09-11 | 주식회사 히타치하이테크 | 에너지 필터, 및 그것을 구비한 에너지 애널라이저 및 하전 입자빔 장치 |
| WO2022135842A1 (en) | 2020-12-22 | 2022-06-30 | Asml Netherlands B.V. | Electron optical column and method for directing a beam of primary electrons onto a sample |
| WO2023017107A1 (en) * | 2021-08-13 | 2023-02-16 | Eldico Scientific Ag | Charged-particle beam device for diffraction analysis |
| US11791128B2 (en) * | 2021-10-13 | 2023-10-17 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Method of determining the beam convergence of a focused charged particle beam, and charged particle beam system |
| US12165831B2 (en) | 2022-05-31 | 2024-12-10 | Kla Corporation | Method and system of image-forming multi-electron beams |
| US12283453B2 (en) | 2022-06-01 | 2025-04-22 | Kla Corporation | Creating multiple electron beams with a photocathode film |
| US20250112017A1 (en) * | 2023-09-30 | 2025-04-03 | Kla Corporation | Imaging thousands of electron beams during workpiece inspection |
| US20250357066A1 (en) * | 2024-05-17 | 2025-11-20 | Kla Corporation | Electron beam metrology having a source energy spread with filtered tails |
| US20250357067A1 (en) * | 2024-05-17 | 2025-11-20 | Kla Corporation | Aberration corrector for scanning electron microscope with multiple electron beams |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002367552A (ja) * | 2001-06-12 | 2002-12-20 | Hitachi Ltd | 荷電粒子線装置 |
| US20160329189A1 (en) * | 2015-05-08 | 2016-11-10 | Kla-Tencor Corporation | Method and System for Aberration Correction in an Electron Beam System |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3031959A1 (de) * | 1979-08-28 | 1981-03-19 | Ishikawajima-Harima Heavy Industries Co., Ltd., Tokyo | Verfahren und anordnung zum messen der temperatur und des spektralen faktors von proben |
| JPS61240553A (ja) * | 1985-04-18 | 1986-10-25 | Jeol Ltd | イオンビ−ム描画装置 |
| JP2821153B2 (ja) * | 1988-11-24 | 1998-11-05 | 株式会社日立製作所 | 荷電粒子線応用装置 |
| KR19980079377A (ko) * | 1997-03-25 | 1998-11-25 | 요시다쇼이치로 | 하전립자선 전사장치 |
| US6452175B1 (en) * | 1999-04-15 | 2002-09-17 | Applied Materials, Inc. | Column for charged particle beam device |
| US6552340B1 (en) * | 2000-10-12 | 2003-04-22 | Nion Co. | Autoadjusting charged-particle probe-forming apparatus |
| DE10061798A1 (de) * | 2000-12-12 | 2002-06-13 | Leo Elektronenmikroskopie Gmbh | Monochromator für geladene Teilchen |
| US6723997B2 (en) * | 2001-10-26 | 2004-04-20 | Jeol Ltd. | Aberration corrector for instrument utilizing charged-particle beam |
| JP3914750B2 (ja) * | 2001-11-20 | 2007-05-16 | 日本電子株式会社 | 収差補正装置を備えた荷電粒子線装置 |
| US6924488B2 (en) * | 2002-06-28 | 2005-08-02 | Jeol Ltd. | Charged-particle beam apparatus equipped with aberration corrector |
| JP4310250B2 (ja) * | 2004-08-30 | 2009-08-05 | 株式会社日立ハイテクノロジーズ | 荷電粒子線調整方法及び荷電粒子線装置 |
| JP4922747B2 (ja) * | 2006-12-19 | 2012-04-25 | 日本電子株式会社 | 荷電粒子ビーム装置 |
| JP5250350B2 (ja) * | 2008-09-12 | 2013-07-31 | 株式会社日立ハイテクノロジーズ | 荷電粒子線応用装置 |
| EP2325862A1 (en) * | 2009-11-18 | 2011-05-25 | Fei Company | Corrector for axial aberrations of a particle-optical lens |
| EP2385542B1 (en) * | 2010-05-07 | 2013-01-02 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Electron beam device with dispersion compensation, and method of operating same |
| US8735814B2 (en) * | 2010-10-15 | 2014-05-27 | Hitachi High-Technologies Corporation | Electron beam device |
| JP5712074B2 (ja) * | 2011-07-20 | 2015-05-07 | 株式会社日立ハイテクノロジーズ | 走査透過電子顕微鏡 |
| US9053900B2 (en) * | 2012-04-03 | 2015-06-09 | Kla-Tencor Corporation | Apparatus and methods for high-resolution electron beam imaging |
| JP6002428B2 (ja) * | 2012-04-24 | 2016-10-05 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
| US8921782B2 (en) * | 2012-11-30 | 2014-12-30 | Kla-Tencor Corporation | Tilt-imaging scanning electron microscope |
| JP6265643B2 (ja) | 2013-07-31 | 2018-01-24 | 株式会社日立ハイテクノロジーズ | 電子ビーム装置 |
| JP6178699B2 (ja) * | 2013-11-11 | 2017-08-09 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
| JP6254445B2 (ja) * | 2014-01-09 | 2017-12-27 | 株式会社日立ハイテクノロジーズ | 荷電粒子ビーム装置 |
| US9443696B2 (en) | 2014-05-25 | 2016-09-13 | Kla-Tencor Corporation | Electron beam imaging with dual Wien-filter monochromator |
| JP6320186B2 (ja) * | 2014-06-16 | 2018-05-09 | 株式会社日立ハイテクノロジーズ | 荷電粒子線応用装置 |
| JP6554288B2 (ja) * | 2015-01-26 | 2019-07-31 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
| US10366862B2 (en) * | 2015-09-21 | 2019-07-30 | KLA-Tencor Corporaton | Method and system for noise mitigation in a multi-beam scanning electron microscopy system |
-
2016
- 2016-12-07 US US15/371,557 patent/US10090131B2/en active Active
-
2017
- 2017-12-06 EP EP17877592.0A patent/EP3552222A4/en active Pending
- 2017-12-06 CN CN201780074833.4A patent/CN110036456B/zh active Active
- 2017-12-06 TW TW106142684A patent/TWI743262B/zh active
- 2017-12-06 WO PCT/US2017/064958 patent/WO2018106833A1/en not_active Ceased
- 2017-12-06 JP JP2019530459A patent/JP2019537228A/ja active Pending
- 2017-12-06 KR KR1020197019547A patent/KR102325235B1/ko active Active
-
2022
- 2022-02-09 JP JP2022018557A patent/JP7194849B2/ja active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002367552A (ja) * | 2001-06-12 | 2002-12-20 | Hitachi Ltd | 荷電粒子線装置 |
| US20160329189A1 (en) * | 2015-05-08 | 2016-11-10 | Kla-Tencor Corporation | Method and System for Aberration Correction in an Electron Beam System |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7194849B2 (ja) | 2022-12-22 |
| WO2018106833A1 (en) | 2018-06-14 |
| KR20190085157A (ko) | 2019-07-17 |
| CN110036456B (zh) | 2022-04-05 |
| EP3552222A4 (en) | 2020-07-22 |
| TW201833969A (zh) | 2018-09-16 |
| JP2022058942A (ja) | 2022-04-12 |
| US10090131B2 (en) | 2018-10-02 |
| US20180158644A1 (en) | 2018-06-07 |
| JP2019537228A (ja) | 2019-12-19 |
| EP3552222A1 (en) | 2019-10-16 |
| TWI743262B (zh) | 2021-10-21 |
| CN110036456A (zh) | 2019-07-19 |
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| Date | Code | Title | Description |
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| PA0105 | International application |
Patent event date: 20190705 Patent event code: PA01051R01D Comment text: International Patent Application |
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Patent event code: PA02012R01D Patent event date: 20201130 Comment text: Request for Examination of Application |
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Patent event date: 20201130 Patent event code: PA03022R01D Comment text: Request for Accelerated Examination |
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Comment text: Notification of reason for refusal Patent event date: 20210406 Patent event code: PE09021S01D |
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| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20210816 |
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| GRNT | Written decision to grant | ||
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Comment text: Registration of Establishment Patent event date: 20211105 Patent event code: PR07011E01D |
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