KR102319163B1 - Method for manufacturing multi-junction light-emitting device having insulating reflective structure - Google Patents

Abstract

Disclosed is a method for manufacturing a multi-junction light-emitting element having an insulating reflective structure. The method of the present invention may have an etching stop function between a diode and a diode epi structure, install a separation layer having a DBR structure which reflects a specific wavelength so as to reflect the specific wavelength, and manufacture a multi-junction diode to have discrete performance.

Description

Method for manufacturing a multi-junction light emitting device having an insulating reflective structure

The present invention relates to a method for manufacturing a multi-junction light emitting device having an insulating reflective structure, and more particularly, has an etching stop function between a diode and a diode epitaxial structure, and has a DBR structure that reflects for a specific wavelength. It relates to a method of manufacturing a multi-junction light emitting device having an insulating reflective structure capable of reflecting a specific wavelength by providing a layer.

In general, a light emitting diode is a device including an N-type semiconductor layer, a P-type semiconductor layer, and an active layer positioned between the N-type and P-type semiconductor layers, and when a forward electric field is applied to the N-type and P-type semiconductor layers. Electrons and holes are injected into the active layer, and the electrons and holes injected into the active layer recombine to emit light.

That is, in the light emitting diode, after bonding the P-type semiconductor and the N-type semiconductor, when a voltage is applied to the P-type semiconductor and the N-type semiconductor to flow a current, the holes of the P-type semiconductor move toward the N-type semiconductor, and on the contrary, N Electrons of the type semiconductor move toward the P-type semiconductor, and electrons and holes move to the PN junction.

The electrons moved to the PN junction fall from the conduction band to the valence band and combine with the holes.

At this time, energy is emitted corresponding to the height difference between the conduction band and the valence band, that is, the energy difference, and the energy is emitted in the form of light.

Such a light emitting diode may include a horizontal light emitting diode and a vertical light emitting diode.

The vertical light emitting diode has better current dissipation performance than the horizontal light emitting diode.

In addition, while the horizontal type light emitting diode is formed on a growth substrate on which the epitaxial layer is grown, the vertical type light emitting diode is formed on a metal substrate and thus has an advantage in that it has excellent heat dissipation performance using a metal substrate having high thermal conductivity.

1 is an exemplary view showing a manufacturing process of a light emitting device according to the prior art. The light emitting device 10 includes a first semiconductor layer 12 , an active layer 13 , and a second semiconductor layer 14 on a substrate 11 . are sequentially stacked, and a first electrode 15 is formed on the second semiconductor layer 14 , a portion of the first semiconductor layer 12 , and the active layer 13 and the second semiconductor layer 14 . After etching 16 , a second electrode 17 is formed on the exposed first semiconductor layer 12 .

On the other hand, Korean Patent Publication No. 10-0716645 discloses a lower N-type semiconductor layer positioned on a substrate; a lower P-type semiconductor layer positioned on one region of the lower N-type semiconductor layer; an upper P-type semiconductor layer positioned on one region of the lower P-type semiconductor layer; an upper N-type semiconductor layer positioned on one region of the upper P-type semiconductor layer; a lower active layer interposed between the lower N-type semiconductor layer and the lower P-type semiconductor layer; an upper active layer interposed between the upper P-type semiconductor layer and the upper N-type semiconductor layer; and a vertically stacked light emitting diode including a separation layer interposed between the lower P-type semiconductor layer and the upper P-type semiconductor layer.

However, since the isolation layer according to the prior art is formed of a material having the same or similar crystal structure as the lower and upper P-type semiconductor layers in order to electrically isolate the lower and upper light emitting diodes, the etching process of the light emitting diode structure required for manufacturing There is a limitation in implementing stacked light emitting diodes of various structures because it cannot have the effect of an etching stop.

Korean Patent Publication No. 10-0716645 (Title of Invention: Light emitting device having vertically stacked light emitting diodes)

In order to solve this problem, the present invention provides an insulating reflective structure capable of reflecting a specific wavelength by installing a separation layer having a DBR structure that has an etching stop function and reflects a specific wavelength between the diode and the diode epitaxial structure. An object of the present invention is to provide a method for manufacturing a multi-junction light emitting device having a.

In order to achieve the above object, an embodiment of the present invention provides a method for manufacturing a multi-junction light emitting device having an insulating reflective structure, the method comprising: a) forming a first epitaxial structure on a substrate; b) forming a separation layer on the first epitaxial structure; c) forming a second epitaxial structure on the separation layer; d) etching a portion of the separation layer and both sides of the second epitaxial structure so that a portion of the first epitaxial structure is exposed; e) forming an electrode on the first epitaxial structure, the separation layer, and the second epitaxial structure; f) forming a reflective part under the substrate except for a partial area; and (g) forming an electrode in a lower partial region of the substrate on which the reflection part is not formed.

In addition, the separation layer according to the embodiment is characterized in that a DBR (Distributed Bragg Reflector) structure that reflects for a specific wavelength (λ) is formed.

In addition, the DBR structure according to the embodiment is made to reflect a specific wavelength (λ) by repeatedly growing a heterogeneous material composed of layers 1 and 2 having different refractive indices (n1, n2) to a predetermined thickness (d1, d2). characterized.

In addition, according to the embodiment, the thickness d1 of the layer 1 is d1 = λ/4n1, and the thickness d2 of the layer 2 is d2 = λ/4n2.

In addition, the separation layer according to the embodiment is characterized in that the first epitaxial structure and the second epitaxial structure are electrically insulated to form individual characteristics.

In addition, the separation layer according to the embodiment has a structure in which an insulating hetero semiconductor layer doped with Fe is stacked, a structure in which an undoped insulating hetero semiconductor layer is stacked, an N-type hetero semiconductor layer, and a P-type hetero semiconductor layer. A structure in which an N-type hetero semiconductor layer is stacked, a structure in which a P-type hetero semiconductor layer is stacked on an N-type hetero semiconductor layer, a P-type hetero semiconductor layer and an N-type hetero semiconductor layer are sequentially stacked on an N-type hetero semiconductor layer, It is characterized in that it is one of the structures in which an N-type hetero semiconductor layer and a P-type hetero semiconductor layer are sequentially stacked on a P-type hetero semiconductor layer.

In addition, the embodiment (h) the multi-junction light emitting device manufactured in step g) is mounted on a sub-mount, and when mounted on the sub-mount, the first epi structure, the separation layer, and the second epi structure using a wire Wire bonding the electrode formed on the structure and the sub-mount electrode formed on the sub-mount; characterized in that it further comprises.

In addition, an embodiment of the present invention provides a method for manufacturing a multi-junction light emitting device having an insulating reflective structure, comprising: i) forming a first epitaxial structure on a substrate; ii) forming a separation layer on the first epitaxial structure; iii) forming a second epitaxial structure on the separation layer; iv) forming a reflective part except for a partial area on the second epitaxial structure; v) forming an electrode in an upper partial region of the second epitaxial structure in which the reflective part is not formed, and installing a temporary substrate on the reflective part; vi) separating the substrate from the first epitaxial structure, and etching both sides of the first epitaxial structure and a portion of the separation layer to expose a portion of the second epitaxial structure; vii) forming an electrode on the first epitaxial structure, the separation layer, and the second epitaxial structure, and separating the temporary substrate from the second epitaxial structure.

In addition, the separation layer according to the embodiment is characterized in that a DBR (Distributed Bragg Reflector) structure that reflects for a specific wavelength (λ) is formed.

In addition, the DBR structure according to the embodiment is made to reflect a specific wavelength (λ) by repeatedly growing a heterogeneous material composed of layers 1 and 2 having different refractive indices (n1, n2) to a predetermined thickness (d1, d2). characterized.

In addition, according to the embodiment, the thickness d1 of the layer 1 is d1 = λ/4n1, and the thickness d2 of the layer 2 is d2 = λ/4n2.

In addition, the separation layer according to the embodiment is characterized in that the first epitaxial structure and the second epitaxial structure are electrically insulated to form individual characteristics.

In addition, the separation layer according to the embodiment has a structure in which an insulating hetero semiconductor layer doped with Fe is stacked, a structure in which an undoped insulating hetero semiconductor layer is stacked, an N-type hetero semiconductor layer, and a P-type hetero semiconductor layer. A structure in which an N-type hetero semiconductor layer is stacked, a structure in which a P-type hetero semiconductor layer is stacked on an N-type hetero semiconductor layer, a P-type hetero semiconductor layer and an N-type hetero semiconductor layer are sequentially stacked on an N-type hetero semiconductor layer, It is characterized in that it is one of the structures in which an N-type hetero semiconductor layer and a P-type hetero semiconductor layer are sequentially stacked on a P-type hetero semiconductor layer.

The present invention has an etching stop function between the diode and the diode epitaxial structure, and has an advantage in that it is possible to reflect a specific wavelength by installing a separation layer having a DBR structure that reflects for a specific wavelength.

In addition, the present invention has the advantage that multi-junction diodes can be manufactured to have individual performance.

1 is an exemplary view showing a manufacturing process of a light emitting device according to the prior art.
2 is a flowchart illustrating a manufacturing process of a multi-junction light emitting device having an insulating reflective structure according to an embodiment of the present invention.
3 is an exemplary view illustrating a structure of a light emitting device manufactured according to the embodiment of FIG. 2 .
4 is an exemplary view illustrating an epitaxial structure of a separation layer of a multi-junction light emitting device having an insulating reflective structure according to the embodiment of FIG. 2 .
FIG. 5 is another exemplary view illustrating an epitaxial structure of a separation layer of a multi-junction light emitting device having an insulating reflective structure according to the embodiment of FIG. 2 .
FIG. 6 is another exemplary view illustrating an epitaxial structure of a separation layer of a multi-junction light emitting device having an insulating reflective structure according to the embodiment of FIG. 2 .
FIG. 7 is another exemplary view illustrating an epitaxial structure of a separation layer of a multi-junction light emitting device having an insulating reflective structure according to the embodiment of FIG. 2 .
FIG. 8 is another exemplary view illustrating an epitaxial structure of a separation layer of a multi-junction light emitting device having an insulating reflective structure according to the embodiment of FIG. 2 .
FIG. 9 is another exemplary view illustrating an epitaxial structure of a separation layer of a multi-junction light emitting device having an insulating reflective structure according to the embodiment of FIG. 2 .
FIG. 10 is another exemplary view illustrating an epitaxial structure of a separation layer of a multi-junction light emitting device having an insulating reflective structure according to the embodiment of FIG. 2 .
11 is another exemplary view illustrating an epitaxial structure of a separation layer of a multi-junction light emitting device having an insulating reflective structure according to the embodiment of FIG. 2 .
12 is an exemplary view conceptually illustrating a method of manufacturing a multi-junction light emitting device having an insulating reflective structure according to the embodiment of FIG. 2 .
13 is an exemplary view illustrating a structure connected to each driving a multi-junction light emitting device having an insulating reflective structure according to the embodiment of FIG. 12 .
14 is another exemplary view conceptually illustrating a method of manufacturing a multi-junction light emitting device having an insulating reflective structure according to the embodiment of FIG. 2 .
15 is an exemplary view illustrating a structure connected to each driving a multi-junction light emitting device having an insulating reflective structure according to the embodiment of FIG. 14 .
16 is a flowchart illustrating a manufacturing process of a multi-junction light emitting device having an insulating reflective structure according to another embodiment of the present invention.
17 is an exemplary view conceptually illustrating a method of manufacturing a multi-junction light emitting device having an insulating reflective structure according to the embodiment of FIG. 16 .

Hereinafter, the present invention will be described in detail with reference to preferred embodiments of the present invention and the accompanying drawings.

Prior to describing the specific contents for carrying out the present invention, it should be noted that components not directly related to the technical gist of the present invention are omitted within the scope of not disturbing the technical gist of the present invention.

In addition, the terms or words used in the present specification and claims have meanings and concepts consistent with the technical idea of the invention based on the principle that the inventor can define the concept of an appropriate term to best describe his invention. should be interpreted as

In the present specification, the expression that a part "includes" a certain element does not exclude other elements, but means that other elements may be further included.

Also, terms such as “… unit”, “… group”, and “… module” mean a unit that processes at least one function or operation, which may be divided into hardware, software, or a combination of the two.

In addition, the term "at least one" is defined as a term including the singular and the plural, and even if the term "at least one" does not exist, each element may exist in the singular or plural, and may mean the singular or plural. will be self-evident.

In addition, that each component is provided in singular or plural may be changed according to an embodiment.

Hereinafter, a preferred embodiment of a method for manufacturing a multi-junction light emitting device having an insulating reflective structure according to a first embodiment of the present invention will be described in detail with reference to the accompanying drawings.

2 is a flowchart illustrating a manufacturing process of a multi-junction light emitting device having an insulating reflective structure according to an embodiment of the present invention, and FIG. 3 is an exemplary view showing the structure of the light emitting device manufactured according to the embodiment of FIG. 2 , FIG. 4 is an exemplary diagram illustrating an epitaxial structure of a separation layer of a multi-junction light emitting device having an insulating reflective structure according to the embodiment of FIG. 2 .

2 to 4 , in the method of manufacturing a multi-junction light emitting device having an insulating reflective structure according to a first embodiment of the present invention, a plurality of epi-structures 120 and 120a are stacked, and the separation layer 130 is formed. Doedoe is divided and formed into a plurality of stacked integral pieces, forming a first epitaxial structure 120 (S100) and forming a separation layer 130 on an upper portion of the first epitaxial structure 120 (S110) And, forming the second epitaxial structure 120a on the upper portion of the separation layer 130 (S120), determining whether the growth of the epitaxial structure is complete (S130), and as the growth of the epitaxial structure is completed, the first A portion of the separation layer 130 and both sides of the second epitaxial structure 120a are etched so that a portion of the first epitaxial structure 120 is exposed, and the first epitaxial structure 120, the separation layer 130, the second 2 A step (S140) of forming the electrodes 140, 160, and 170 in the epitaxial structure 120a, excluding a partial area under the substrate 110, and forming the reflective part 180 (S140), and the reflective part 180 ) is configured to include the step (S150) of forming the electrode 190 in the lower partial region of the substrate 110 is not formed.

In step S100 , the first epitaxial structure 120 in which the first semiconductor layer 121 , the active layer 122 , and the second semiconductor layer 123 are sequentially stacked on the substrate 110 is formed.

The step S110 causes the separation layer 130 to be stacked on the first epitaxial structure 120 , and the step S120 is the first semiconductor layer 121a and the active layer 122a on the separation layer 130 . and a second epitaxial structure 120a in which the second semiconductor layer 123a is sequentially stacked is formed.

The separation layer 130 is made of a semiconductor material different from the semiconductor material of the first epitaxial structure 120 and the second epitaxial structure 120a to have an etching stop function in a subsequent process.

In addition, the separation layer 130 forms a DBR (Distributed Bragg Reflector) structure capable of reflecting with respect to a specific wavelength λ.

In the DBR structure, a heterogeneous material composed of a layer 1 131 and a layer 2 132 having different refractive indices (n1 and n2), that is, the layer 1 131 has an n1 refractive index, and the layer 2 132 has an n2 refractive index It may be composed of heterogeneous materials with

In addition, in the DBR structure, the layer 1 131 has an arbitrary thickness d1, and the layer 2 132 is grown to have an arbitrary thickness d2 so that a specific wavelength λ is reflected, The layer 1 131 and the layer 2 132 may be repeatedly grown according to the target wavelength λ.

That is, in the present embodiment, for convenience of explanation, the DBR structure having one separation layer 130 composed of the layer 1 131 and the layer 2 132 is described as an embodiment, but the present embodiment is not limited thereto, and a specific wavelength The separation layer 130 including the layer 1 131 and the layer 2 132 and the separation layer 130a including the layer 1 131a and the layer 2 132a so as to have reflectivity capable of reflecting (λ) ) may be repeated at least one or more to have a grown DBR structure.

In addition, the DBR structure determines the thickness d1 of the layer 1 131 based on d1 = λ/4n1 to reflect a specific wavelength λ, and the thickness d2 of the layer 2 132 It can be determined based on d2 = λ/4n2.

In addition, the separation layer 130 is configured to electrically insulate the first epitaxial structure 120 and the second epitaxial structure 120a to form individual characteristics.

In addition, as shown in FIG. 5 , the separation layer 130 has an N-type DBR structure, an N-type DBR structure in which an insulating heterogeneous semiconductor layer is stacked, and an N-type insulator layer such as Fe. DBR structure in which doped insulating heterogeneous semiconductor layers are stacked, DBR structure in which P-type layer is inserted in N type, DBR structure in which P/N type layer is inserted in N type, N/P type layer is inserted in N type It may be configured in a DBR structure.

In addition, as shown in FIG. 6 , the DBR structure includes a DBR structure including a P-type layer, a DBR structure in which an insulating hetero semiconductor layer undoped in P type is stacked, and an insulating hetero semiconductor layer in which Fe is doped in P type. It may be composed of a stacked DBR structure, a DBR structure in which an N-type layer is inserted into a P type, a DBR structure in which a P/N type layer is inserted in a P type, and a DBR structure in which an N/P type layer is inserted in the P type. .

In addition, as shown in FIG. 7 , an N-type + P-type DBR structure, a DBR structure in which an undoped insulating heterogeneous semiconductor layer is stacked, a DBR structure in which an insulator layer is inserted, a DBR structure in which an N/P type layer is inserted, P It may be composed of a DBR structure in which the /N type layer is inserted.

In addition, as shown in FIG. 8 , a P-type + N-type DBR structure, a DBR structure in which an undoped insulating heterogeneous semiconductor layer is stacked, a DBR structure in which an insulator layer is inserted, a DBR structure in which an N/P type layer is inserted, P It may be composed of a DBR structure in which the /N type layer is inserted.

In addition, as shown in FIG. 9 , an N-type + undoped DBR structure, a DBR structure in which an undoped insulating heterogeneous semiconductor layer is stacked, a DBR structure in which an insulator layer is inserted, a DBR structure in which an N/P type layer is inserted, P It may be composed of a DBR structure in which the /N type layer is inserted.

In addition, as shown in FIG. 10 , a DBR structure in which N-type + Fe is doped, a DBR structure in which an undoped insulating hetero semiconductor layer is stacked, a DBR structure in which an insulator layer is inserted, a DBR structure in which an N/P type layer is inserted, The DBR structure in which the P/N type layer is inserted may be configured.

Also, as shown in FIG. 11 , an N-type DBR structure, a DBR structure in which an undoped insulating heterogeneous semiconductor layer is stacked, a DBR structure in which an insulator layer is inserted, and a DBR structure in which a P/N type layer is inserted may be configured.

On the other hand, in step S130, repeated growth so that the separation layer 130 can reflect a specific wavelength λ, and steps S110 and S120 are repeatedly performed until the growth of the epi structure is completed.

The step S140 is at least a portion of the separation layer 130 so that a portion of the first epi structure 120 is exposed as the growth of the separation layer and the epi structure is completed through the step S130 as shown in FIG. 2, the etching region 150 is formed by etching both sides of the epitaxial structure 120a, and the exposed first epitaxial structure 120, the separation layer 130, and the second epitaxial structure 120a are shown in FIG. 12(b) And as shown in FIG. 12(c) , a first electrode 140 , a second electrode 160 , and a third electrode 170 are respectively formed.

In addition, in step S140, as shown in FIG. 12(d), the reflective part 180 is formed under the substrate 110 except for a partial region, and the reflective part 180 is not formed as shown in FIG. 12(e). A fourth electrode 190 is formed in a partial region of the lower portion of the substrate 110 .

Subsequently, the multi-junction light emitting device manufactured in step 140 is mounted on the sub-mount 200 as shown in FIG. 13 , and when mounted on the sub-mount 200 , using the wires 210 , 211 , and 212 , the The first epi-structure 120 , the separation layer 130 , the electrodes 140 , 160 , 170 formed on the second epi-structure 120a and the sub-mount electrodes 201 and 201a formed on the sub-mount 200 are wire Wire bonding (S150) is performed using (210, 211, 212, 213).

That is, in step S150 , the multi-junction light-emitting device 100 is installed on the sub-mount 200 as shown in FIG. 13( a ), and the first electrode 140 and the second electrode of the multi-junction light-emitting device 100 . By bonding the wires 210 , 211 , and 212 to 160 and the third electrode 170 , respectively, and bonding the wire 213 to the sub-mount electrode 201 installed in the sub-mount 200 , the individual light emitting device can be configured to be driven, respectively.

In addition, as shown in FIG. 13B , the first electrode 140 and the submount electrode 201 are connected with a wire 210 , and the second electrode 160 and the third electrode 170 are connected to the submount 200 . By connecting the auxiliary sub-mount electrode 201a of the auxiliary sub-mount 200a separated from the wire through the wires 211 and 212, a circuit that can be used for AC power may be formed.

In addition, as shown in Fig. 13 (c), the first electrode 140 and the third electrode 170 are connected to the auxiliary sub-mount electrode 201a of the auxiliary sub-mount 200a through wires 210 and 212, The second electrode 160 may be connected to the sub-mount electrode 201 of the sub-mount 200 through a wire 211 to form a circuit in which light emitting devices are connected in parallel.

In addition, as shown in FIG. 13( d ), the first electrode 140 is connected to the auxiliary sub-mount electrode 201a of the auxiliary sub-mount 200a through the wire 210 , and the second electrode 160 and the third electrode Reference numeral 170 may be configured to form a circuit in which light emitting devices are connected in series by connecting them through a wire 211 .

Next, a method for manufacturing a multi-junction light emitting device having an insulating reflective structure according to a second embodiment of the present invention will be described.

14 is another exemplary view conceptually illustrating a method of manufacturing a multi-junction light emitting device having an insulating reflective structure according to the embodiment of FIG. 2 , and FIG. 15 is a multi-junction light emitting device having an insulating reflective structure according to the embodiment of FIG. It is an exemplary diagram showing a structure connected to drive each.

The light emitting device using the method for manufacturing a multi-junction light emitting device having an insulating reflective structure according to the second embodiment has a triple bonded structure, and the first epitaxial structure 120 and the separation layer 130 are formed on the substrate 110 . ), the second epitaxial structure 120a, the separation layer 130a, and the third epitaxial structure 120b are sequentially stacked.

In the light emitting device having a triple bonded structure according to the second embodiment, in contrast to the double bonded light emitting device according to the first embodiment, a separation layer 130a is additionally installed on the second epitaxial structure 120a, By installing the third epitaxial structure 120b on the additionally installed separation layer 130a, three light emitting devices can be integrally configured.

That is, the first electrode 140 is installed in the third epitaxial structure 120b, and the second electrode 160 is provided in the separation layer 130a provided between the third epitaxial structure 120b and the second epitaxial structure 120a. ) is installed, and the third electrode 170 is installed on the second epi-structure 120a, and the separation layer 130 installed between the second epi-structure 120a and the first epi-structure 120 has a fifth electrode. (160a) is installed, and the sixth electrode (S170a) is installed on the first epitaxial structure 120 .

In addition, as shown in Fig. 15 (a), installed on the sub-mount 200, a triple junction light emitting device is installed, and the first electrode 140 and the second electrode 160 of the triple junction light emitting device, Wires 210 , 211 , 211a , 212 and 212a are respectively bonded to the third electrode 170 , the fifth electrode 160a , and the sixth electrode 170a , and the submount electrode 201 installed on the submount 200 . ) by bonding the wires 213 to each other, individual light emitting devices can be configured to be driven, respectively.

In addition, as shown in FIG. 15B , the auxiliary sub-mount electrode 201a of the auxiliary sub-mount 200a configured to be separated from the first electrode 140 and the sub-mount 200 is connected with a wire 210, and the second electrode 160 and the third electrode 170 are respectively connected to the sub-mount electrode 201 and wires 211 and 212, and the fifth electrode 160a is connected to the auxiliary sub-mount electrode 201a through the wire 211a. In addition, by connecting the sixth electrode 170a to the auxiliary sub-mount electrode 201a through the wire 212a, a circuit that can be used for AC power may be formed.

In addition, as shown in Fig. 15(c), the first electrode 140, the third electrode 170, and the sixth electrode 170a are connected to the auxiliary sub-mount 200a through the wires 210, 212, and 212a. It is connected to the electrode 201a, and the second electrode 160 and the fifth electrode 160a are connected to the sub-mount electrode 201 of the sub-mount 200 through wires 211 and 211a, so that the light emitting device is parallel to each other. It may be configured to form a connected circuit.

In addition, as shown in FIG. 15( d ), the first electrode 140 is connected to the auxiliary sub-mount electrode 201a of the auxiliary sub-mount 200a through a wire 210 , and the second electrode 160 and the third electrode Reference numeral 170 is connected through a wire 211, and the fifth electrode 160a and the sixth electrode 170a are connected through a wire 211a to form a series-connected circuit in which light emitting devices are connected.

Next, a method for manufacturing a multi-junction light emitting device having an insulating reflective structure according to a third embodiment of the present invention will be described.

16 is a flowchart illustrating a manufacturing process of a multi-junction light emitting device having an insulating reflective structure according to another embodiment of the present invention, and FIG. 17 is a method of manufacturing a multi-junction light emitting device having an insulating reflective structure according to the embodiment of FIG. 16 . It is an example diagram conceptually showing.

16 and 17 , the method for manufacturing a multi-junction light emitting device having an insulating reflective structure according to a third embodiment of the present invention includes forming a first epitaxial structure 120 on a substrate 110 . (S200), forming the separation layer 130 on the upper portion of the first epitaxial structure 120 (S210), and forming the second epitaxial structure 120a on the upper portion of the separation layer 130 (S220) and when the growth of the epi-structure is completed, a reflective layer 180 is formed except for a partial region of the upper portion of the second epi-structure 120a, and the reflective portion 180 is not formed, a second epi-structure is not formed. Forming a fourth electrode 190 in a partial region of the upper portion 120a (S240), installing a temporary substrate 300 on an upper portion of the reflective unit 180 (S250), and the first epi Separating the substrate 110 from the structure 120 ( S260 ), and both sides of the first epitaxial structure 120 and a part of the separation layer 130 so that a part of the second epitaxial structure 120a is exposed. etching to form electrodes 140, 160, and 170 on the first epitaxial structure 120, the separation layer 130, and the second epitaxial structure 120a (S270), and the temporary substrate 300 and separating (S280) from the second epitaxial structure 120a.

In step S200 , the first epitaxial structure 120 in which the first semiconductor layer 121 , the active layer 122 , and the second semiconductor layer 123 are sequentially stacked on the substrate 110 is formed.

The step S210 causes the separation layer 130 to be stacked on the first epitaxial structure 120 , and the step S220 includes the first semiconductor layer 121a and the active layer 122a on the separation layer 130 . and a second epitaxial structure 120a in which the second semiconductor layer 123a is sequentially stacked is formed.

The separation layer 130 is made of a semiconductor material different from the semiconductor material of the first epitaxial structure 120 and the second epitaxial structure 120a to have an etching stop function in a subsequent process.

In addition, the separation layer 130 forms a DBR (Distributed Bragg Reflector) structure capable of reflecting with respect to a specific wavelength λ.

In the DBR structure, a heterogeneous material composed of a layer 1 131 and a layer 2 132 having different refractive indices (n1 and n2), that is, the layer 1 131 has an n1 refractive index, and the layer 2 132 has an n2 refractive index It may be composed of heterogeneous materials with

In addition, in the DBR structure, the layer 1 131 has an arbitrary thickness d1, and the layer 2 132 is grown to have an arbitrary thickness d2 so that a specific wavelength λ is reflected, The layer 1 131 and the layer 2 132 may be repeatedly grown according to the target wavelength λ.

That is, in the present embodiment, for convenience of explanation, the DBR structure having one separation layer 130 composed of the layer 1 131 and the layer 2 132 is described as an embodiment, but the present embodiment is not limited thereto, and a specific wavelength The separation layer 130 including the layer 1 131 and the layer 2 132 and the separation layer 130a including the layer 1 131a and the layer 2 132a so as to have reflectivity capable of reflecting (λ) ) may be repeated at least one or more to have a grown DBR structure.

In addition, the DBR structure determines the thickness d1 of the layer 1 131 based on d1 = λ/4n1 to reflect a specific wavelength λ, and the thickness d2 of the layer 2 132 It can be determined based on d2 = λ/4n2.

In addition, the separation layer 130 according to the embodiment has a structure in which an insulating hetero semiconductor layer doped with Fe is stacked, a structure in which an undoped insulating hetero semiconductor layer is stacked, an N-type hetero semiconductor layer, and a P-type heterogeneous semiconductor layer. A structure in which an N-type hetero semiconductor layer is stacked on a semiconductor layer, a structure in which a P-type hetero semiconductor layer is stacked on an N-type hetero semiconductor layer, and a P-type hetero semiconductor layer and an N-type hetero semiconductor layer are sequentially stacked on an N-type hetero semiconductor layer structure, in which an N-type hetero semiconductor layer and a P-type hetero semiconductor layer are sequentially stacked on a P-type hetero semiconductor layer.

As shown in FIG. 17a) in step S230, when it is determined that the growth of the epitaxial structure is complete, in step S240, as shown in FIG. 17(b), the reflective layer 180 except for an upper portion of the second epitaxial structure 120a. , and a fourth electrode 190 is formed in an upper partial region of the second epitaxial structure 120a in which the reflection unit 180 is not formed.

Subsequently, in the step S250, the temporary substrate 300 is installed on the upper portion of the reflection unit 180 as shown in FIG. 17(c), and the step S260 is performed from the first epitaxial structure 120 as shown in FIG. The substrate 110 is separated.

In step S270, both sides of the first epitaxial structure 120 and a part of the separation layer 130 are etched so that a part of the second epitaxial structure 120a is exposed, as shown in FIGS. 17(e) to 17(g). and forming electrodes 140 , 160 , and 170 on the first epitaxial structure 120 , the separation layer 130 , and the second epitaxial structure 120a , respectively.

Subsequently, in step S280, the temporary substrate 300 is separated from the second epitaxial structure 120a as shown in FIG.

Therefore, it is possible to reflect a specific wavelength by installing a separation layer having a DBR structure that has an etching stop function and reflects for a specific wavelength between the diode and the diode epi structure, and multi-junction diodes can have individual performance. can be manufactured to

As described above, although described with reference to the preferred embodiment of the present invention, those skilled in the art can variously modify and change the present invention within the scope without departing from the spirit and scope of the present invention described in the claims below. You will understand that it can be done.

In addition, the reference numbers described in the claims of the present invention are only described for clarity and convenience of explanation, and are not limited thereto, and in the process of describing the embodiment, the thickness of the lines shown in the drawings or the size of components, etc. may be exaggerated for clarity and convenience of explanation.

In addition, the above-mentioned terms are terms defined in consideration of functions in the present invention, which may vary depending on the intention or custom of the user or operator, so the interpretation of these terms should be made based on the content throughout this specification. .

In addition, even if it is not explicitly shown or described, a person of ordinary skill in the art to which the present invention pertains can make various modifications including the technical idea according to the present invention from the description of the present invention. Obviously, this still falls within the scope of the present invention.

In addition, the above embodiments described with reference to the accompanying drawings have been described for the purpose of explaining the present invention, and the scope of the present invention is not limited to these embodiments.

100, 100': multi-junction light emitting device 110: substrate
120: first epi structure 120a: second epi structure
120b: third epitaxial structure 121, 121a, 121b: first semiconductor layer
122, 122, 122b: active layer 123, 123a, 123b: second semiconductor layer
130, 130a: separation layer 140: first electrode
150: etching region 160: second electrode
160a: fifth electrode 170: third electrode
170a: sixth electrode 180: reflector
190: fourth electrode 200: sub-mount
200a: auxiliary sub-mount 201: sub-mount electrode
201a: auxiliary sub-mount electrodes 210, 211, 212, 213: wire
300: temporary board

Claims (11)

delete delete delete delete delete delete i) forming a first epitaxial structure 120 on the substrate 110;
ii) forming a separation layer 130 on the first epitaxial structure 120;
iii) forming a second epitaxial structure 120a on the separation layer 130;
iv) forming a reflective portion 180 on the second epitaxial structure 120a except for a partial region;
v) forming an electrode 190 in an upper partial region of the second epitaxial structure 120a in which the reflective part 180 is not formed, and installing the temporary substrate 300 on the reflective part 180 ;
vi) separating the substrate 110 from the first epitaxial structure 120, both sides of the first epitaxial structure 120 and a part of the separation layer 130 so that a part of the second epitaxial structure 120a is exposed etching the;
vii) forming electrodes 140 , 160 , 170 on the first epitaxial structure 120 , the separation layer 130 , and the second epitaxial structure 120a , and attaching the temporary substrate 300 to the second epitaxial structure 120a ) separating from;
The separation layer 130 is a method of manufacturing a multi-junction light emitting device having an insulating reflective structure, characterized in that the DBR (Distributed Bragg Reflector) structure that reflects with respect to a specific wavelength (λ) is formed. 8. The method of claim 7,
The DBR structure is made to reflect a specific wavelength (λ) by repeatedly growing a heterogeneous material composed of a layer 1 131 and a layer 2 132 having different refractive indices (n1, n2) to a predetermined thickness (d1, d2). A method for manufacturing a multi-junction light emitting device having an insulating reflective structure. 9. The method of claim 8,
The thickness d1 of the layer 1 131 is d1 = λ/4n1, and the thickness d2 of the layer 2 132 is d2 = λ/4n2. Way. 10. The method of claim 9,
The separation layer 130 is a method of manufacturing a multi-junction light emitting device having an insulating reflective structure, characterized in that the first epitaxial structure 120 and the second epitaxial structure 120a are electrically insulated to form individual characteristics. 11. The method of claim 10,
The separation layer 130 has a structure in which an insulating hetero semiconductor layer doped with Fe is stacked, a structure in which an undoped insulating hetero semiconductor layer is stacked, an N-type hetero semiconductor layer, and an N-type hetero semiconductor layer in a P-type hetero semiconductor layer. A structure in which a semiconductor layer is stacked, a structure in which a P-type hetero semiconductor layer is stacked on an N-type hetero semiconductor layer, a structure in which a P-type hetero semiconductor layer and an N-type hetero semiconductor layer are sequentially stacked on an N-type hetero semiconductor layer, a P-type heterogeneous semiconductor layer A method for manufacturing a multi-junction light emitting device having an insulating reflective structure, characterized in that it is one of a structure in which an N-type hetero semiconductor layer and a P-type hetero semiconductor layer are sequentially stacked on a semiconductor layer.

Images