KR102309620B1 - Organic light emitting display apparatus and method for manufacturing the same - Google Patents

Abstract

An organic light emitting display device and a manufacturing method thereof are provided. The organic light emitting diode display includes a first substrate including a display area and a peripheral area, a second substrate facing the first substrate, a metal layer disposed on the peripheral area of the first substrate, and including a plurality of holes, and the first substrate and a sealing member bonding the second substrate to each other, wherein at least one of the plurality of holes includes a region that does not overlap a width of the sealing member.

Description

Organic light emitting display apparatus and method for manufacturing the same

The present invention relates to an organic light emitting diode display and a method for manufacturing the same.

A display device is a device used to provide visual information such as an image or video to a user. Such display devices are being manufactured in various forms to express visual information such as images or images.

In particular, the organic light emitting display device is a self-luminous display that electrically excites an organic compound to emit light, can be driven at a low voltage, can be easily reduced in thickness, and has a wide viewing angle and fast response speed. It is attracting attention as a next-generation display that can solve the

In the case of such an organic light emitting diode display, a sealing member may be used when bonding the lower substrate and the upper substrate. A laser is irradiated to the sealing member to bond the lower substrate and the upper substrate. When the laser is irradiated, the metal or the like is melted and moved along the laser direction to be thickly accumulated in a specific area. The thickly accumulated material as described above may cause peeling of the sealing member.

The present invention provides an organic light emitting diode display capable of reducing peeling of a sealing member and a method of manufacturing the same.

The present invention provides an organic light emitting diode display for improving bonding strength of a sealing member and a method of manufacturing the same.

An organic light emitting diode display according to an embodiment of the present invention includes: a first substrate including a display area and a peripheral area; a second substrate facing the first substrate; a first metal layer disposed on the peripheral region of the first substrate and including a plurality of holes; and a sealing member bonding the first substrate and the second substrate to each other, wherein at least one of the plurality of holes includes a region that does not overlap a width of the sealing member.

In addition, a longest length of at least one of the plurality of holes may be greater than a width of the sealing member.

In addition, the plurality of holes may be arranged to be spaced apart one by one in the longitudinal direction of the sealing member.

In addition, at least some of the holes arranged adjacent to each other in the longitudinal direction of the sealing member among the plurality of holes may overlap.

Also, at least one of the plurality of holes may have a polygonal shape, a circular shape, or an elliptical shape.

In addition, the plurality of holes may be arranged in two dimensions.

Also, the holes arranged adjacent to each other in the first direction among the plurality of holes may be arranged to be shifted from each other.

In addition, some regions of the plurality of holes arranged adjacent to each other in the first direction may overlap in the first direction, and other regions may not overlap in the first direction.

Also, the first direction may be a longitudinal direction of the sealing member.

Also, some of the plurality of holes may not overlap the width of the sealing member.

Also, the display area may include a transistor, and the first metal layer may be formed of the same material as an electrode of the transistor.

In addition, the first metal layer may be formed of the same material as at least one of a source electrode and a drain electrode of the transistor.

It may further include a first insulating layer disposed between the first substrate and the first metal layer.

In addition, the first insulating layer may be formed of the same material as the interlayer insulating layer of the display area.

In addition, the second and third metal layers disposed between the first substrate and the first insulating layer and spaced apart from each other; may further include.

and a second insulating layer disposed on the first substrate while covering the second metal layer, wherein the first insulating layer may be disposed on the second insulating layer while covering the third metal layer .

In addition, a distance between the second metal layer and the third metal layer may be smaller than the longest length of the hole.

In addition, the second metal layer and the third metal layer may be disposed on different layers.

Meanwhile, according to an exemplary embodiment, a method of manufacturing an organic light emitting display device includes: preparing a first substrate having a display area and a peripheral area surrounding the display area; sequentially forming an insulating layer and a metal layer on the peripheral region; forming a hole in the metal layer; and bonding the first substrate and a second substrate corresponding to the first substrate by using a sealing member filling the hole, wherein a portion of the hole formed in the metal layer does not overlap the width of the sealing member. can

In addition, a longest length of the hole may be greater than a width of the sealing member.

1 is a configuration diagram schematically illustrating an organic light emitting display device according to an embodiment of the present invention.
FIG. 2 is a plan view schematically illustrating the organic light emitting diode display of FIG. 1 .
FIG. 3 is a cross-sectional view illustrating a portion of a display area and a sealing member in the drawing illustrated in FIG. 1 .
FIG. 4 is a schematic plan view of the sealing member of FIG. 3 ;
5 is a plan view illustrating a hole according to another embodiment.
6A and 6B are plan views illustrating a hole according to another exemplary embodiment.
7 is a plan view illustrating a portion of a sealing member according to another embodiment.
FIG. 8 is a partial cross-sectional view of the sealing member of FIG. 7 .
9 is a cross-sectional view of an organic light emitting diode display according to another exemplary embodiment.
10 is a flowchart illustrating a method of manufacturing an organic light emitting diode display according to an exemplary embodiment.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms. It is provided to fully inform In addition, in the drawings for convenience of description, the size of the components may be exaggerated or reduced. For example, since the size and thickness of each component shown in the drawings are arbitrarily indicated for convenience of description, the present invention is not necessarily limited to the illustrated bar.

In the following embodiments, the x-axis, the y-axis, and the z-axis are not limited to three axes on a Cartesian coordinate system, and may be interpreted in a broad sense including them. For example, the x-axis, y-axis, and z-axis may be orthogonal to each other, but may refer to different directions that are not orthogonal to each other.

Terms such as first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another.

The terms used in the present application are only used to describe specific embodiments, and are not intended to limit the present invention. The singular expression includes the plural expression unless the context clearly dictates otherwise. In the present application, terms such as "comprises" or "have" are intended to designate that a feature, number, step, operation, component, part, or combination thereof described in the specification exists, but one or more other features It is to be understood that it does not preclude the possibility of the presence or addition of elements, numbers, steps, operations, components, parts, or combinations thereof.

On the other hand, when it is said that various components such as layers, films, regions, and plates are “on” other components, this is not only when they are “on” other components, but also when other components are disposed between them. include

FIG. 1 is a configuration diagram schematically illustrating an organic light emitting display device 100 according to an exemplary embodiment, and FIG. 2 is a plan view schematically illustrating the organic light emitting display device 100 of FIG. 1 .

1 and 2 , the organic light emitting diode display 100 includes a first substrate 10 including a display area DA, a second substrate 20 facing the first substrate 10 , and a display area. and a sealing member 30 surrounding the DA and bonding the first substrate 10 and the second substrate 20 to each other.

The first substrate 10 may be divided into a display area DA and a peripheral area PA surrounding the display area DA. The substrate 10 may be made of a transparent glass material containing SiO2 as a main component. The substrate 10 is not necessarily limited thereto and may be formed of a transparent plastic material. It may be a flexible substrate with flexibility. The flexible substrate is preferably made of a material having a lower specific gravity than a glass substrate, is light, is not easily broken, and can be bent, for example, a polymer material such as a flexible plastic film.

The display area DA of the first substrate 10 may include transistors TA and TB that are driving thin film transistors, a capacitor Cst, and an organic light emitting device OELD, etc. on the substrate 10 . A detailed description of the display area DA will be described later.

The second substrate 20 corresponds to the first substrate 10 and may be formed of various materials such as glass material, metal material, or plastic material. Although not shown in the drawings, a functional film having various functions may be formed on the second substrate 20 . For example, the functional film may include at least one of a polarizing plate, a touch screen, and a cover window.

The touch screen may be a structure in which a touch screen pattern is formed directly on the second substrate 20 , for example, an on-cell touch screen panel. The polarizing plate prevents external light from being reflected from the display area DA. The cover window may protect the organic light emitting diode display.

The first substrate 10 and the second substrate 20 may be bonded through the sealing member 30 . The sealing member 30 may surround the display area DA and be disposed on the peripheral area PA. The sealing member 30 seals the display area DA to protect it from the outside. A desiccant or a filler may be disposed in the inner space S closed by the first substrate 10 , the second substrate 20 , and the sealing member 30 .

The IC 50 may be mounted on one edge of the first substrate 10 that is not covered by the second substrate 20 . A metal wire connecting the IC 50 and the display area DA may be disposed between the first substrate 10 and the sealing member 30 .

Meanwhile, the sealing member 30 may be formed of a material that is melted by applying a predetermined thermal energy. The sealing member 30 may be a material that is cured by light. For example, the sealing member 30 includes a glass frit.

When bonding the first substrate 10 and the second substrate 20 using the above-described sealing member 30 , the sealing member 30 may be cured by irradiating UV light or laser light. Specifically, UV light or laser light may be irradiated to the sealing member 30 by passing through the second substrate 20 . When a metal material is disposed under the sealing member 30 , the UV light, laser light, etc. is reflected from the metal material, and the irradiation efficiency of UV light or laser light, etc. can be increased toward the sealing member 30 again.

However, not only the material of the sealing member 30 but also the material between the sealing member 30 and the second substrate, for example, a metal, may be melted by the light. Thus, the molten material moves according to the traveling direction of the light, and the molten material may be accumulated at a point where the light irradiation is terminated. The accumulated material may cause the sealing member 30 to peel off.

The organic light emitting diode display according to an exemplary embodiment may include a hole h that does not overlap the width w of the sealing member 30 to disperse and accumulate the molten material. Thus, peeling can be reduced.

3 is a cross-sectional view illustrating a portion of the display area DA and the sealing member 30 in the drawing shown in FIG. 1 , and FIG. 4 is a schematic plan view of the sealing member 30 of FIG. 3 .

First, referring to FIG. 3 , a buffer layer 101 may be further formed on the substrate 10 . The buffer layer 101 may be made of an inorganic material such as SiOx, SiNx, SiON, AlO, AlON, or an organic material such as acryl or polyimide, or an organic material and an inorganic material may be alternately stacked. The buffer layer 101 serves to block oxygen and moisture, prevents diffusion of moisture or impurities generated from the substrate 10, and controls the transfer rate of heat during crystallization, so that the semiconductor can be crystallized well. can play a role

Meanwhile, the display area DA of the first substrate may include a pixel including a circuit and an organic light emitting device on the substrate. Although only one pixel is illustrated in FIG. 3 , this is only for convenience of description and the display area DA may include a plurality of pixels. Also, although FIG. 3 illustrates two thin film transistors and an organic light emitting diode included in the pixel, the pixel may further include an additional thin film transistor and a capacitor in addition to the illustrated elements.

On the buffer layer 101 , a pixel circuit including thin film transistors Ta and Tb (thin film Ta, Tbansistor) and a capacitor (not shown) and an organic light emitting device (OLED) connected to the pixel circuit ) is formed. The thin film transistors Ta and Tb largely include active layers 102a,b, gate electrodes 104a,b, and source/drain electrodes 106sa,da,sb,db. The two thin film transistors Ta and Tb are characterized in that gate electrodes 104a and b are formed on different layers.

Specifically, in the case of the first thin film transistor Ta, the active layer 102a formed in a predetermined pattern is disposed on the upper surface of the buffer layer 101 . The active layer 102a may contain an inorganic semiconductor material such as silicon, an organic semiconductor material, or an oxide semiconductor material, and may be formed by implanting a p-type or n-type dopant. A first gate insulating layer 113 is formed on the active layer 102a. A first gate electrode 104a is formed on the first gate insulating layer 113 to correspond to the active layer 102a. The second gate insulating film 123 and the interlayer insulating film 105 are formed to cover the first gate electrode 104a, and the source/drain electrodes 106sa and da are formed on the interlayer insulating film 105, the active layer ( 102a) is formed to be in contact with a predetermined area.

Next, in the case of the second thin film transistor Tb, an active layer 102b formed in a predetermined pattern is disposed on the upper surface of the buffer layer 101, and a first gate insulating film 113 and a second gate insulating film are disposed on the active layer 102b. (123) is formed. A second gate electrode 104b is formed on the second gate insulating layer 123 to correspond to the active layer 102b. An interlayer insulating film 105 is formed to cover the second gate electrode 104b, and source/drain electrodes 106sb and db are formed on the interlayer insulating film 105 to contact the active layer 102b.

Here, the interlayer insulating layer 105 may be formed of a single layer or multiple layers of inorganic materials such as silicon oxide or silicon nitride. The thickness d3 of the interlayer insulating layer 105 is thicker than the thickness d1 of the first gate insulating layer 113 or the thickness d2 of the second gate insulating layer 123 to planarize the surface, and source/drain electrodes Prevents the generation of parasitic capacitance between (106sa,sb,da,db) and the lower conductive layer.

Meanwhile, as described above, by varying the thickness of the gate insulating film between the gate electrodes 104a and b and the active layers 102a and 102 for each of the thin film transistors Ta and Tb, the following effects can be obtained. First, when a thin film transistor used as a driving thin film transistor is formed to have a thick gate insulating layer, the driving range of the gate voltage (Dr range) is widened, so that the size of the gate voltage applied to the gate electrode of the driving thin film transistor is changed to make an organic light emitting diode. It is possible to control the light emitted from the light source to have a richer gradation. Meanwhile, since a thin film transistor used as a switching thin film transistor can be formed to have a thin gate insulating film, it is possible to quickly turn on and turn off. Accordingly, there is a feature of realizing an optimal pixel circuit structure for an organic light emitting diode display.

A passivation layer 107 is formed to cover the source/drain electrodes 106sa, sb, da, and db of the thin film transistors Ta and Tb. A separate insulating layer may be further formed on the passivation layer 107 for planarization.

An organic light emitting diode (OLED) is formed on the passivation layer 107 . The organic light emitting diode OLED includes a first electrode 111 , a second electrode 112 , and an intermediate layer 114 .

A first electrode 111 is formed on the passivation layer 107 . The first electrode 111 is formed to be electrically connected to any one of the source/drain electrodes 106sa, sb, da, and db. Then, a pixel defining layer 109 is formed to cover the first electrode 111 . After a predetermined opening is formed in the pixel defining film 109, an intermediate layer 114 having an organic light emitting layer is formed in a region defined by the opening. A second electrode 112 is formed on the intermediate layer 114 .

Meanwhile, an image is not displayed in the peripheral area PA of the substrate, and various members and other modules for driving the display area DA may be disposed. In the peripheral area PA, the buffer layer 101 and the first insulating layer 210 may be sequentially disposed on the substrate 10 . In addition, the first metal layer 310 may be disposed on the first insulating layer 210 , and a second insulating layer 220 covering the first metal layer 310 may be included on the first insulating layer 210 . . The first metal layer 310 and the second metal layer 320 may be insulated from each other by the second insulating layer 220 , and the first metal layer 310 and the second metal layer 320 may be spaced apart from each other. . In addition, the first metal layer 310 and the second metal layer 320 may be disposed so as not to overlap in the height direction of the organic light emitting diode display. In addition, a third insulating layer 230 covering the second metal layer 320 may be disposed on the second insulating layer 220 , and a third metal layer 330 may be disposed on the third insulating layer 230 . . Meanwhile, the third metal layer 330 may include a plurality of holes h. In addition, the sealing member 30 may bond the first substrate 10 and the second substrate 20 to each other while filling the plurality of holes h. In addition, the distance d between the first metal layer 310 and the second metal layer 320 may be smaller than the longest length of the hole h formed in the third metal layer 330 .

Each of the first and second insulating layers 210 and 220 in the peripheral area PA may be formed of the same material as the first and second gate insulating layers 113 and 124 of the display area DA, and may be formed on the same layer. can be located in In addition, the first and second metal layers 310 and 320 in the peripheral area PA may be formed of the same material as the first and second gate electrodes 104a and 104b in the display area DA, respectively. It may be located on the same floor. In addition, the third insulating layer 230 of the peripheral area PA may be formed of the same material as the interlayer insulating layer 105 of the display area DA, and may be formed of the third metal layer 330 of the peripheral area PA. It may be formed of the same material as the source/drain electrodes 106sa, da, sb, and db of the display area DA.

The hole h according to an exemplary embodiment may not overlap the width w of the sealing member 30 . As shown in FIG. 4 , the holes h according to an exemplary embodiment may be arranged to be spaced apart one by one in the longitudinal direction l1 (the y-direction in FIG. 4 ) of the sealing member 30 . The hole h may have a rectangular shape. The longest length a of the hole h may be greater than the width w of the sealing member 30 . Accordingly, the partial region h1 of the hole h may overlap the sealing member 30 , and the partial region h2 may not overlap the sealing member 30 . For example, the central region of the hole h may overlap the sealing member 30 , and the edge region may not overlap the sealing member 30 .

There may be a plurality of holes h, and the plurality of holes h may be arranged in one dimension. For example, the holes h may be arranged to be spaced apart one by one in the longitudinal direction l1 of the sealing member 30 . The light may be irradiated while traveling in the longitudinal direction l1 of the sealing member 30 . The molten material may move in the longitudinal direction l1 of the sealing member 30 and accumulate in the hole h. In addition, the light may be irradiated while traveling in the width direction w1 of the sealing member 30 . The molten material may move in the width direction w1 of the sealing member 30 and accumulate in the hole h. Since the molten material accumulates in the hole h, thick accumulation of the molten material can be prevented. Thus, peeling of the sealing member 30 can be reduced.

5, 6A, and 6B are plan views illustrating a hole h according to another exemplary embodiment. 5 and 6A , the holes h may be arranged to be spaced apart one by one in the longitudinal direction l1 of the sealing member 30 . The longest length a of the hole h may be greater than the width w of the sealing member 30 . Accordingly, a partial region of the hole h may overlap the sealing member 30 , and a partial region of the hole h may not overlap the sealing member 30 . For example, the central region of the hole h may overlap the sealing member 30 , and the edge region may not overlap the sealing member 30 . Also, among the plurality of holes h, at least some of the holes arranged adjacent to each other in the longitudinal direction of the sealing member may overlap.

The hole h shown in FIG. 5 may have a parallelogram shape. The direction with respect to the longest length a of the hole h may be shifted from at least one of the width direction w1 of the sealing member 30 and the longitudinal direction l1 of the sealing member 30 . Accordingly, at least some regions of the adjacent holes 510 and 520 among the holes h may be disposed on the same line as the width direction w1 of the sealing member 30 . In addition, at least some regions of the adjacent holes 520 and 530 among the holes h may be disposed on the same line as the longitudinal direction l1 of the sealing member 30 .

Alternatively, the hole h shown in FIG. 6A may have a zigzag shape bent at least once or more. The direction with respect to the longest length a of the hole h may be shifted from the width direction w1 of the sealing member 30 and the longitudinal direction l1 of the sealing member 30 .

The hole h shown in FIGS. 5 and 6A may reduce the moving distance of the molten material than the hole h shown in FIG. 4 . As the moving distance of the molten material becomes smaller, the amount of the molten material accumulated in the hole h may be reduced. Thus, the occurrence of peeling of the sealing member 30 may be further reduced. Although the hole (h) is illustrated in a polygonal shape in the drawings, this is only for convenience of description and is not limited thereto. The hole h may be a circle, an ellipse, or a polygon other than a square.

Alternatively, as shown in FIG. 6B , the sub-holes h1 and h2 that start from the inside of the sealing member and overlap the sealing member and then end inside the sealing member again, and the sub-holes h1 and h2 that start from the outside of the sealing member and overlap the sealing member, as shown in FIG. 6B . It may be composed of a combination of the sub-holes h3, h4, and h5 that are terminated from the outside of the sealing member again after being completed. The shape of the sub-holes may be a polygon such as a triangle, a semi-circle, or an ellipse.

7 is a plan view illustrating a portion of the sealing member 30 according to another embodiment, and FIG. 8 is a partial cross-sectional view of the sealing member 30 of FIG. 7 . 7 and 8 , a plurality of holes h may be arranged in the third metal layer 330 in two dimensions. In addition, a portion of the hole 710 arranged in the edge region of the sealing member 30 among the plurality of holes h may not overlap the sealing member 30 and a portion thereof. Among the plurality of holes h, the hole 720 arranged in the middle region of the sealing member 30 may not overlap the sealing member 30 and a partial region thereof.

In addition, the plurality of holes may be arranged to be shifted from at least one of the longitudinal direction l1 and the width direction w1. Among the plurality of holes h, two holes 730 and 740 arranged adjacent to each other in the longitudinal direction l1 have some regions overlapping in the longitudinal direction l1, and the remaining regions do not overlap in the longitudinal direction l1. can At least some regions of the holes 740 and 750 arranged adjacent to each other in the width direction w1 among the plurality of holes h may also overlap. Thus, even if the longest length a of the hole h is smaller than the width w of the sealing member 30 , the plurality of holes h are formed in the longitudinal direction l1 or the width direction w1 of the sealing member 30 . ) can accommodate molten material moving to

9 is a cross-sectional view of an organic light emitting diode display according to another exemplary embodiment. 3 and 9 , the organic light emitting diode display of FIG. 9 may include one thin film transistor. Thus, in the peripheral area PA, a buffer layer, a first insulating layer 210 , and a first metal layer 310 may be disposed on a substrate, and a third insulating layer 230 may be disposed on the first metal layer 310 . have. That is, compared to FIG. 3 , the second insulating layer 220 and the second metal layer 320 may not be disposed. Also, in FIG. 9 , a hole h larger than the width of the sealing member is formed on the third metal layer 330 , and the sealing member may adhere the first and second substrates while filling the hole h. .

10 is a flowchart illustrating a method of manufacturing an organic light emitting diode display according to an exemplary embodiment. For example, in the method of manufacturing an organic light emitting display device according to an embodiment of the present invention, a first substrate 10 having a display area DA and a peripheral area PA surrounding the display area DA is prepared ( S1010 ). ). A first insulating layer 210 , a first metal layer 310 , a second insulating layer 220 , a second metal layer 320 , and a third insulating layer 230 on the peripheral area PA of the first substrate 10 . ) and the third metal layer 330 may be sequentially formed. For example, in the first substrate 10 , the buffer layer 101 , the first gate insulating layer 113 , the first gate electrode 104a , and the second gate insulating layer are formed over the display area DA and the peripheral area PA. 123), the second gate electrode 104b, the interlayer insulating layer 105, and the source/drain electrodes 106sa, da, sb, and db are provided in the display area DA. Tb) may be formed. When forming the source/drain electrodes 106sa, da, sb, and db while forming the transistors Ta and Tb, the third metal layer 330 positioned in the peripheral area PA of the first substrate 10 is formed. may include steps.

A hole h may be formed in the third metal layer 330 ( S1020 ).

The first substrate 10 and the second substrate corresponding to the first substrate 10 may be bonded to each other using the sealing member 30 filling the hole h ( S1030 ). The sealing member 30 is formed in the peripheral area PA surrounding the display area DA, and in particular, may be formed while filling the hole h. However, a portion of the hole h formed in the third metal layer 330 may not overlap the width w of the sealing member 30 .

When the first substrate 110 and the second substrate 120 are aligned with each other, and ultraviolet or laser light is irradiated from the upper portion of the second substrate 120 , between the first substrate 110 and the second substrate 120 . The sealing member 30 disposed on the may be cured. When ultraviolet or laser light is irradiated to the sealing member 30 , the third metal layer 330 formed to overlap the sealing member 30 on the first substrate 110 reflects the laser light. Accordingly, the sealing member 30 is primarily cured by the light irradiated from the upper portion of the second substrate 120 , and is secondarily cured by the laser light reflected through the third metal layer 330 . Accordingly, the sealing member 30 may be hardened. In addition, even if the third metal layer 330 is melted by the irradiation of light, since the melted material is accumulated in the hole h, the occurrence of peeling of the sealing member 30 can be reduced.

Although the present invention has been described with reference to the embodiment shown in the drawings, which is merely exemplary, those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Therefore, the true technical protection scope of the present invention should be determined by the technical spirit of the appended claims.

10: first substrate 101: buffer layer
113: first gate insulating film 123: second gate insulating film
104a, 104b: gate electrode 105: interlayer insulating film
20: second substrate 30: sealing member
210: first insulating layer 220: second insulating layer
230: third insulating layer 310: first metal layer
320: second metal layer 330: third metal layer
DA: Display area PA: Peripheral area
h: Hall OLED: organic light emitting device
Ta, Tb: transistor

Claims (20)

a first substrate including a display area and a peripheral area;
a second substrate facing the first substrate;
a first metal layer disposed on the peripheral region of the first substrate; and
a sealing member bonding the first substrate and the second substrate to each other;
The first metal layer includes a plurality of holes, and at least one of the plurality of holes is a hole surrounded by a material constituting the first metal layer on a plane and includes a region not overlapping a width of the sealing member. . The method of claim 1,
The longest length of at least one of the plurality of holes is,
An organic light emitting diode display having a width greater than a width of the sealing member. The method of claim 1,
The plurality of holes are
An organic light emitting diode display arranged to be spaced apart from each other in a longitudinal direction of the sealing member. 4. The method of claim 3,
Among the plurality of holes, the holes arranged adjacent to each other in the longitudinal direction of the sealing member are,
An organic light emitting diode display at least partially overlapping. The method of claim 1,
At least one of the plurality of holes
An organic light emitting diode display having a polygonal shape, a circular shape, or an oval shape. The method of claim 1,
The plurality of holes are two-dimensionally arranged in an organic light emitting diode display. 7. The method of claim 6,
The organic light emitting diode display device in which holes arranged adjacent to each other in a first direction among the plurality of holes are displaced from each other. 8. The method of claim 7,
Among the plurality of holes, a portion of the holes arranged adjacent to each other in the first direction overlaps in the first direction, and other areas do not overlap in the first direction. 8. The method of claim 7,
The first direction is a longitudinal direction of the sealing member. 7. The method of claim 6,
Some of the plurality of holes are,
The organic light emitting diode display that does not overlap the width of the sealing member The method of claim 1,
The display area includes a transistor,
The first metal layer is formed of the same material as the electrode of the transistor. 12. The method of claim 11,
The first metal layer is formed of the same material as at least one of a source electrode and a drain electrode of the transistor. The method of claim 1,
and a first insulating layer disposed between the first substrate and the first metal layer. 14. The method of claim 13,
The first insulating layer is formed of the same material as the interlayer insulating layer of the display area. 14. The method of claim 13,
and a second metal layer and a third metal layer disposed between the first substrate and the first insulating layer and spaced apart from each other. 16. The method of claim 15,
A second insulating layer disposed on the first substrate while covering the second metal layer; further comprising,
The first insulating layer is disposed on the second insulating layer while covering the third metal layer. 16. The method of claim 15,
A distance between the second metal layer and the third metal layer is smaller than the longest length of the hole. 16. The method of claim 15,
The second metal layer and the third metal layer are disposed on different layers. preparing a first substrate having a display area and a peripheral area surrounding the display area;
sequentially forming an insulating layer and a metal layer on the peripheral region;
forming a hole in the metal layer; and
bonding the first substrate and a second substrate corresponding to the first substrate by using a sealing member filling the hole;
The hole formed in the metal layer is a hole surrounded by a material constituting the first metal layer on a plane, and a portion of the hole does not overlap a width of the sealing member. 20. The method of claim 19,
The longest length of the hole is
A method of manufacturing an organic light emitting diode display having a width greater than a width of the sealing member.

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