KR100463595B1 - The organic electro-luminescence device and method of fabricating of the same - Google Patents

Abstract

The present invention relates to an organic electroluminescent device, and more particularly to a method of manufacturing an organic electroluminescent device.

In summary, the organic electroluminescent device according to the present invention is configured to be present only inside the capsule because the optical film has a property of adsorbing moisture in separately configuring the low refractive index optical film under the organic light emitting layer.

In this case, the light emitted from the light emitting layer is not lost by the low refractive index (about 1.2 or less) optical film, and most of them can be emitted to the outside to realize high quality, and the optical film exists only inside the capsule. As a result, water absorption may be blocked, thereby increasing the reliability of the organic light emitting device.

Description

The organic electroluminescent device and method of manufacturing the same {The organic electro-luminescence device and method of fabricating of the same}

The present invention relates to an organic light emitting device, and more particularly, to an organic light emitting device configured with a low refractive index optical film and a method of manufacturing the same.

In general, organic light emitting diodes inject electrons and holes into the light emitting layer from the electron injection electrodes and the hole injection electrodes, respectively, to inject the injected electrons. ) Is a device that emits light when the exciton, which is a combination of holes and holes, drops from the excited state to the ground state.

Due to this principle, unlike a conventional LCD, it does not require a separate light source, thereby reducing the volume and weight of the device.

In addition, the organic EL device exhibits high quality panel characteristics (low power, high brightness, high reaction rate, low weight). OELD is considered to be a powerful next-generation display that can be used in most consumer electronic applications such as mobile terminal, CHS, PDA, Camcorder and Palm PC.

In addition, since the manufacturing process is simple, there is an advantage that can reduce the production cost more than conventional LCD.

The method of driving the organic light emitting diode can be classified into a passive matrix type and an active matrix type.

The passive matrix type organic light emitting device has a simple structure and a simple manufacturing method. However, the passive matrix type organic light emitting device has a high power consumption and a large area of the display device, and the opening ratio decreases as the number of wirings increases.

On the other hand, an active matrix organic light emitting diode has an advantage of providing high luminous efficiency and high image quality.

1 is a diagram schematically showing a configuration of a conventional organic light emitting element (active matrix type).

As illustrated, the organic light emitting diode 10 includes a thin film transistor (T) array portion 14 on the transparent first substrate 12 and a first electrode 16 on the thin film transistor array portion 14. ) And the organic light emitting layer 18 and the second electrode 20.

In this case, the light emitting layer 18 expresses the colors of red (R), green (G), and blue (B). In a general method, a separate light emitting red, green, and blue light is generated for each pixel (P). Organic materials are patterned and used.

In the case of the bottom emission type, a transparent conductive metal such as indium-zinc-oxide (IZO) or indium-tin-oxide (ITO) is used as the first electrode, and aluminum is used as the second electrode. Or a double metal layer (LiF / Al) containing aluminum.

The first substrate 12 is bonded to the second substrate 28 having the moisture absorbent 22 and the sealant 26, thereby completing the encapsulated organic light emitting device 10.

At this time, the moisture absorbent 22 is for removing moisture and oxygen that can penetrate into the capsule, and a part of the substrate 28 is etched and the moisture absorbent 22 is filled in the etched portion and fixed with a tape 25. .

In the above configuration, the front surface of the lower substrate 12 constitutes an optical film 13 having low refractive index characteristics.

An example of the low refractive index optical film 13 is found in Matsushita Co., Ltd. "Silica Aerogel Thin Film Substrate for OLED", which was announced at the 2001 SID Conference.

In this paper, a low refractive index optical film is formed on the surface of the substrate from which light is emitted in order to prevent the emission of the organic light emitting diode from being lost. The optical film uses a known sol-gel method. This article describes how to form a silica aerogol film on the surface of a substrate and its effects.

Hereinafter, when configuring the low refractive index optical film as described above with reference to Figures 2 and 3, the optical characteristics will be described.

2 is a view showing optical characteristics when a low refractive index optical film is not formed, and FIG. 3 is a view showing optical characteristics when a low refractive index optical film is formed.

As shown in FIG. 2, when only the light emitting layer 32 is formed on one surface of the substrate 30, the light L emitted from the light emitting layer 32 is the X, Y, and Z axes of the substrate 30. All will go out. That is, most of the light L incident on the substrate 30 is refracted inside the substrate 30 to exit to the side surface of the substrate 30, and a part of the incident light L is part of the upper portion of the substrate 30. Will go out.

On the other hand, as shown in FIG. 3, when the low refractive index optical film 42 is formed between the substrate 40 and the light emitting layer 46, the light emitted from the light emitting layer 46 is formed of the low refractive index optical film 42. Most of the light L is emitted to the upper portion of the substrate 40 by the influence.

As described above, the optical film having a low refractive index characteristic is formed of a material having a plurality of pores or a hydrophilic property in the film.

Accordingly, as shown in FIG. 1, when the low refractive index optical film 13 is formed on the entire surface of the substrate 12, and the organic EL device is encapsulated in the state in which the film is exposed to the outside, the exposed film is exposed to the exposed film. Moisture absorbed by the water penetrates into the organic light emitting device 10.

The moisture that penetrates affects the light emitting layer 18, which shortens the lifespan of the organic light emitting device 10 and decreases reliability.

The present invention has been proposed for the purpose of solving the above problems, and fabricates an organic EL device configured so that the low refractive index optical film is not exposed to the outside.

Such a structure can prevent the moisture permeation caused by the low refractive index optical film that is easy to adsorb the moisture to the outside, thereby increasing the lifespan and increasing the reliability of the organic light emitting device.

1 is a cross-sectional view schematically showing an organic light emitting device according to the related art,

2 and 3 are diagrams for explaining the refractive characteristics of the light according to the absence, presence of the low refractive index optical film between the light emitting layer and the substrate,

4 is a cross-sectional view schematically showing an active light emitting organic light emitting diode according to the present invention;

5 is an enlarged plan view illustrating one pixel of an active light emitting organic light emitting diode;

6A to 6D are cross-sectional views illustrating a process of manufacturing an active matrix organic light emitting diode of a first example according to a first embodiment of the present invention according to the process sequence of the present invention;

7 is a cross-sectional view schematically showing the configuration of an active matrix type organic light emitting diode of a second example according to a first embodiment of the present invention;

8 is a cross-sectional view schematically showing the configuration of an active matrix type organic light emitting diode of a third example according to the first embodiment of the present invention.

9 is a cross-sectional view schematically showing the configuration of a passive matrix organic electroluminescent device of a first example according to a second embodiment of the present invention;

10A to 10C are cross-sectional views illustrating a manufacturing process of a passive matrix organic electroluminescent device according to a second embodiment of the present invention in a process sequence;

FIG. 11 is a cross-sectional view schematically showing the configuration of a passive matrix organic light emitting device of a second example according to a second embodiment of the present invention.

<Description of the symbols for the main parts of the drawings>

99: active matrix organic light emitting device

100: first substrate 102: low refractive index optical film

122: first electrode 124: light emitting layer

126: second electrode 128: seal pattern

200: second substrate 222: moisture absorbent

225: Absorbent Fixed Tape

According to an aspect of the present invention, there is provided an active matrix type organic light emitting display device, comprising: a substrate in which a plurality of pixel regions and a seal pattern region are defined around the pixel region; A low refractive index optical film formed on a substrate corresponding to the pixel region except for the seal pattern region; A driving element and a switching element configured for each pixel region in which the optical film is formed; A first electrode formed in the pixel region in contact with the driving element; An organic light emitting layer formed on the first electrode; A second electrode formed on the organic light emitting layer; It includes a seal pattern configured in the seal pattern region.

The first electrode is an anode electrode for injecting holes into the light emitting layer, and the second electrode is a cathode electrode for injecting electrons into the light emitting layer. A thin film transistor including a gate electrode, a source electrode, and a drain electrode is used.

A power supply wiring connected to the source electrode of the driving device to apply a signal is further configured.

The low refractive index optical film may be patterned in the pixel unit to be in direct contact with the first electrode.

A silicon insulating layer may be further configured between the low refractive index optical film and the first electrode.

According to an aspect of the present invention, there is provided a method of manufacturing an active matrix organic light emitting device, the method comprising: defining a plurality of pixel areas on a substrate and a seal pattern area around the pixel area; Forming a low refractive index optical film on a substrate corresponding to the pixel region except for the seal pattern region; Forming a driving element and a switching element in each pixel region in which the optical film is formed; Forming a first electrode in contact with the driving element so as to be positioned in the pixel region; Forming an organic emission layer on the first electrode; Forming a second electrode on the organic light emitting layer; Forming a seal pattern on a substrate corresponding to the seal pattern region.

The first electrode is formed of a transparent conductive metal having a high work function, such as indium tin oxide (ITO) and indium zinc oxide (IZO), and the second electrode is calcium (Ca), It is formed of one selected from the group of conductive metals including aluminum (Al) and magnesium (Mg) or a distillation layer (LiF / Al) containing aluminum.

As the driving device and the switching device, a thin film transistor including an active layer, a gate electrode, a source electrode, and a drain electrode is used.

The low refractive index optical film may be patterned in the pixel unit to be in direct contact with the first electrode.

According to an aspect of the present invention, a passive matrix type organic light emitting device includes: a plurality of pixel regions and a substrate in which a seal pattern region is defined around the pixel region; A low refractive index optical film formed on a substrate corresponding to the pixel region except for the seal pattern region; A first electrode formed on the optical film; An organic light emitting layer formed on the first electrode; A second electrode formed on the organic light emitting layer; It includes a seal pattern configured in the seal pattern region.

The low refractive index optical film may be patterned in the pixel unit to be in direct contact with the first electrode.

According to an aspect of the present invention, there is provided a method of manufacturing a passive matrix organic light emitting device, the method comprising: defining a plurality of pixel areas on a substrate and a seal pattern area around the pixel area; Forming a low refractive index optical film on a substrate corresponding to the pixel region except for the seal pattern region; Forming a first electrode on top of the optical film; Forming an organic emission layer on the first electrode; Forming a second electrode on the organic light emitting layer; Forming a seal pattern on a substrate corresponding to the seal pattern region.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

First Embodiment

4 is a view schematically showing the configuration of an organic light emitting device according to the present invention.

As illustrated, the organic light emitting device 99 may include an optical film 102 having a low refractive index on one surface of the transparent first substrate 100, a thin film transistor T array on the optical film 102, and The first electrode 122, the organic emission layer 124, and the second electrode 126 are formed on the thin film transistor array unit.

In this case, the light emitting layer 124 expresses the colors of red (R), green (G), and blue (B). In a general method, a separate light emitting red, green, and blue light is generated for each pixel (P). Organic materials are patterned and used.

In the case of the bottom emission type, a transparent conductive metal such as indium-zinc-oxide (IZO) or indium-tin-oxide (ITO) is used as the first electrode, and aluminum is used as the second electrode. (Al) or worms (LiF / Al) containing aluminum are used.

The first substrate 100 is bonded to the second substrate 200 to which the moisture absorbent 222 is attached through the sealant 128, thereby completing the encapsulated organic light emitting device 99.

At this time, the moisture absorbent 222 is for removing moisture and oxygen that can penetrate into the capsule, and etching a part of the substrate 200 and filling the moisture absorbent 222 in the etched portion and fixed with a tape 225. .

A feature of the above-described configuration is that the low refractive index optical film is not exposed to the outside of the sealant.

Before explaining the method of manufacturing the organic light emitting device according to the present invention described above, the configuration of one pixel of the organic light emitting device will be schematically described.

5 is a plan view schematically illustrating a configuration of a single pixel of an organic light emitting diode.

As illustrated, the active matrix thin film transistor array unit includes a switching element T _S , a driving element T _D , and a storage capacitor C _{ST for} each of the plurality of pixels P defined in the substrate 100. The switching element T _S or the driving element T _D may be configured by a combination of one or more thin film transistors, respectively.

In this case, the substrate 100 uses a transparent insulating substrate, and the material may be glass or plastic.

As shown in the drawing, a gate wiring 132 formed in one direction and spaced apart from each other by a predetermined interval is formed on the substrate 100, and a data wiring 134 intersecting the gate wiring 132 with an insulating film interposed therebetween.

At the same time, a power line 135 spaced in parallel with the data line 134 and intersecting with the gate line 132 is formed.

As the switching element T _S and the driving element T _D , a thin film transistor including a gate electrode 136, 108, an active layer 140, 104, a source electrode 146, 116, and a drain electrode 150, 118 is used, respectively.

In the above configuration, the gate electrode 136 of the switching element T _S is connected to the gate line 132, and the source electrode 146 is connected to the data line 134.

The drain electrode 150 of the switching element T _S is connected to the gate electrode 108 of the driving element T _D through the contact hole 154.

The source electrode 116 of the driving element T _D is connected to the power line 135 through the contact hole 156.

In addition, the drain electrode 118 of the driving element T _D is configured to contact the first electrode 122 configured in the pixel portion P.

In this case, the power supply line 135 and the first electrode 115, which is a polycrystalline silicon layer below it, overlap each other with an insulating layer therebetween to form a storage capacitor C _ST .

With reference to the plan view as described above, a method of manufacturing an organic light emitting device according to the present invention will be described through the process of Figures 6a to 6d.

(Steps will be described based only on the configuration of the driving element and the light emitting portion (V`-V) of the configuration of the plan view.)

6A through 6D are cross-sectional views illustrating cutting processes of the driving unit and the pixel units V′-V of FIG. 5 according to the process sequence of the present invention.

As shown in FIG. 6A, a low refractive index material is deposited or spin coated on the entire surface of the substrate 100 in which the plurality of pixel regions P and the sealant region S are defined, and then thermally treated by a low refractive index. The optical film 102 is formed.

Next, a process of patterning the optical film 102 to be positioned inward of the sealant region S is performed.

As shown in FIG. 6B, after depositing amorphous silicon (a-Si: H) on the substrate 100, a crystallization process is performed to form a polycrystalline silicon layer and pattern the active layer 104. Form.

A gate insulating layer 106, which is a second insulating layer, is formed on the entire surface of the substrate 100 on which the active layer 104 is formed. The gate insulating layer 106 is formed of one selected from the group of inorganic insulating materials including silicon nitride (SiN _X ) and silicon oxide (SiO ₂ ).

In this case, the gate insulating layer 106 may be left as it is, or may be formed by etching the same shape as the gate electrode 108.

Subsequently, the gate electrode 108 is formed on the gate insulating film 106 corresponding to a part of the active layer 104.

Successively, by doping trivalent or tetravalent impurities (B or P) on the entire surface of the substrate 100 on which the gate electrode 108 is formed, the remaining active region 104 except for the portion where the gate electrode 108 corresponds. ) Is formed into an ohmic region.

A first contact hole 112 and a second contact hole 114 exposing the ohmic region are formed by forming and patterning an interlayer insulating film 110, which is a third insulating film, on the entire surface of the substrate 100 on which the gate electrode 108 is formed. ).

The gate electrode 108 is formed of a conductive metal group including aluminum (Al), an aluminum alloy, copper (Cu), tungsten (W), tantalum (Ta), and molybdenum (Mo), and the interlayer insulating film 110 Is selected from the group of insulating materials as described above.

As illustrated in FIG. 6C, a second metal layer is formed on the entire surface of the substrate 100 on which the interlayer insulating layer 110 is formed, and then patterned, so that the source electrode 116 and the drain electrode respectively contact the exposed ohmic region. Form 118.

Subsequently, benzocyclobutene (BCB) and acrylic resin (resin) selected from one of the above-described inorganic insulating material groups or in some cases in front of the substrate 100 on which the source and drain electrodes 116 and 118 are formed. A protective film 120 that is a fourth insulating film is formed by depositing or applying one selected from the group of organic insulating materials including the fourth insulating film.

Next, the passivation layer 120 is patterned to form a drain contact hole 122 exposing a part of the drain electrode 118 of each driving element T.

Although not shown, the switching element connected to the driving element is formed in the same process as the driving element, and the drain electrode of the switching element is connected to the gate electrode of the driving element.

Further, in the process of forming the gate electrode of the switching device, the gate wiring described with reference to FIG. 5 is formed, and in the process of forming the source and drain electrodes of the switching device, spaced apart from and parallel to the data wiring connected to the source electrode. The process of forming power wiring is performed. In this case, the power wiring is connected to the source electrode of the driving element. In addition, the storage capacitor may be further configured in parallel with the driving device. See Fig. 5)

As shown in FIG. 6D, a transparent conductive metal including indium tin oxide (ITO) and indium zinc oxide (IZO) is deposited and patterned on the entire surface of the substrate 100 on which the passivation layer 120 is formed. The first electrode 122, which is independently patterned for each pixel region P, is formed while contacting the drain electrode 118 of the thin film transistor T.

Next, an organic emission layer 124 is formed on the first electrode 122.

The organic light emitting layer 124 may be formed of a single layer or a multilayer. When the organic light emitting layer is formed of a multilayer, a hole transporting layer 124a and an electron transporting layer are formed in the main light emitting layer 124b. Further configure the ETL) 124c.

A second electrode 126 having a very low work function is formed on the organic light emitting layer, and a material forming the second electrode 126 is made of aluminum (Al), calcium (Ca), and magnesium (Mg). It may be formed of one selected or formed of a double metal layer of lithium fluorine / aluminum (LIF / Al).

Next, a seal pattern 128 is formed in the sealant region.

In the above-described process, the organic light emitting device before encapsulation can be manufactured.

In this case, in order to minimize the loss of the emitted light and protect the lower refractive index optical film with a hard material, as shown in FIG. 7, the lower interlayer insulating layer 110 and the protective layer corresponding to the first electrode 122 are shown. By etching the 120, the first electrode 122 and the low refractive index optical film may be stacked. In this case, in order to improve contact characteristics of the first electrode 122, a silicon oxide film (not shown) may be formed on the surface of the low refractive index optical film in advance.

As shown in FIG. 8, the low-refractive-index optical film may be patterned in pixel units in a different manner from that of FIG. 7, and each of the low-refractive index optical films may be configured to be in direct contact with the first electrode 122. have.

Hereinafter, a modification of the present invention will be described with reference to the second embodiment.

Second Embodiment

A second embodiment of the present invention is characterized in that the low refractive index optical film is applied to a passive matrix type organic light emitting device.

FIG. 9 is a cross-sectional view showing a cross section cut in one direction along an arbitrary first electrode in a typical passive matrix configuration.

As shown, the low refractive index optical film 202 is formed on the substrate 200 inside the defined seal pattern region S. Referring to FIG.

A partition wall having a predetermined height M between the pixels P and a transparent first electrode 204 on the upper portion of the low refractive index optical film 202 and a pixel on the upper portion of the first electrode 204. 206 is formed.

The emission layer 208 and the second electrode 210 are formed on the pixel P and the partition 206.

In this case, the first electrode 202 is a hole injection electrode for injecting holes into the light emitting layer 208, and the second electrode 210 is electrons for injecting electrons into the light emitting layer 208. It functions as an injection electrode.

In this case, the light emitting layer 208 may be formed of a multilayer including a hole transporting layer 208a, a light emitting layer 208b, and an electron transporting layer 208c, and conversely, may be formed of a single layer composed of only the light emitting layer 208. have.

Hereinafter, a method of manufacturing a passive matrix type organic light emitting diode according to a second embodiment of the present invention before encapsulation will be described with reference to FIGS. 10A to 10C.

As shown in FIG. 10A, a plurality of pixel areas P and a sealant pattern area S are defined around the display area in the display area on the substrate 200.

Next, the low refractive index optical film 202 is formed on the entire surface of the substrate 200 corresponding to the pixel region except for the seal pattern region S. Referring to FIG.

The first electrode (anode electrode) is an anode electrode by depositing a transparent electrode having a large work function such as indium tin oxide (ITO) and indium zinc oxide (IZO) on the low refractive index optical film. 204 is formed.

Subsequently, a partition wall 206 is formed between each pixel P on the upper portion of the first electrode 204.

Next, as shown in FIG. 10B, a polymer organic material is deposited on the substrate 200 on which the barrier rib 206 is formed to form the emission layer 208 for each pixel P. Referring to FIG.

In this case, the light emitting layer 208 may be formed of a multilayer including a hole transporting layer 208a, a light emitting layer 208b, and an electron transporting layer 208c, and conversely, may be formed of a single layer composed of only a light emitting layer.

As shown in FIG. 10C, a second electrode 210 is formed on the emission layer 208.

In this case, the barrier rib 206 is characterized by the characteristics of the organic layer 208 by chemical during the developing process and the chemical etching process in the process of forming the second electrode 210. It is used for the purpose of preventing this change.

In other words, it is configured to independently form the second electrode 210 of each pixel P without using a general photo-lithography process.

Therefore, when the organic polymer material is deposited on the substrate on which the barrier rib 206 is formed, the deposited light emitting layer 208 is not deposited on the side surface of the barrier rib 206 and is planarly disposed above the barrier rib 206. The result formed only on the upper part of the first electrode 204 of each pixel can be obtained.

Next, a process of forming the sealant pattern 128 in the seal pattern region S is performed.

Prior to encapsulation through the process as described above, the passive matrix organic light emitting device according to the present invention can be manufactured, and the above-described configuration constitutes a low refractive index optical film between the substrate and the light emitting layer of light, thereby improving the image quality by improving the brightness. The organic EL device can be manufactured.

The optical film 202 may be formed on the entire surface of the substrate 200 corresponding to the designated area as shown in FIG. 9, and as shown in FIG. 11, the low refractive index optical film 202 for each pixel P. ) Can be configured independently.

Through the above process, the active matrix organic light emitting diode and the passive matrix organic light emitting diode according to the present invention can be manufactured.

Since the organic light emitting device according to the present invention uses a low refractive index optical film, it is possible to reduce the loss of light to the maximum, thereby producing an organic light emitting device having high brightness.

In addition, since the low refractive index optical film is configured inside the capsule, moisture permeation that may occur due to the optical film may be blocked in advance, thereby increasing reliability of the organic light emitting device.

Claims (24)

A substrate in which a plurality of pixel regions and a seal pattern region are defined around the pixel region; A low refractive index optical film formed on a substrate corresponding to the pixel region except for the seal pattern region; A driving element and a switching element configured for each pixel region in which the optical film is formed; A first electrode formed in the pixel region in contact with the driving element; An organic light emitting layer formed on the first electrode; A second electrode formed on the organic light emitting layer; A seal pattern formed in the seal pattern region; Active matrix organic light emitting device comprising a. The method of claim 1, The first electrode is an anode electrode for injecting holes into the light emitting layer, and the second electrode is a cathode electrode for injecting electrons into the light emitting layer. The method of claim 1, And a thin film transistor including an active layer, a gate electrode, a source electrode, and a drain electrode. The method of claim 3, wherein The organic light emitting device further comprises a power supply wiring connected to the source electrode of the driving device for applying a signal. The method of claim 1, The low refractive index optical film is patterned in pixel units, and configured to be in direct contact with the first electrode. The method of claim 5, wherein The organic light emitting device further comprises a silicon insulating film between the low refractive index optical film and the first electrode. Defining a plurality of pixel regions on the substrate and a seal pattern region around the pixel region; Forming a low refractive index optical film on a substrate corresponding to the pixel region except for the seal pattern region; Forming a driving element and a switching element in each pixel region in which the optical film is formed; Forming a first electrode in contact with the driving element so as to be positioned in the pixel region; Forming an organic emission layer on the first electrode; Forming a second electrode on the organic light emitting layer; Forming a seal pattern on a substrate corresponding to the seal pattern region; Active matrix organic light emitting device manufacturing method comprising a. The method of claim 7, wherein The first electrode is an anode electrode (hole electrode) for injecting a hole in the light emitting layer, the second electrode is a cathode electrode (cathode electrode) for injecting electrons into the light emitting layer (active matrix type organic light emitting device manufacturing method). The method of claim 7, wherein The first electrode is an active matrix organic light emitting device manufacturing method comprising a transparent conductive metal having a high work function, such as indium tin oxide (ITO) and indium zinc oxide (IZO). The method of claim 7, wherein The second electrode is an active matrix type organic material composed of a second layer (LiF / Al) including aluminum or one selected from a group of conductive metals including calcium (Ca), aluminum (Al), and magnesium (Mg). Electroluminescent device manufacturing method. The method of claim 7, wherein And a thin film transistor comprising an active layer, a gate electrode, a source electrode, and a drain electrode. The method of claim 11, And a power wiring connected to the source electrode of the driving device to apply a signal. The method of claim 7, wherein The low refractive index optical film is patterned in pixel units, and is configured to be in direct contact with the first electrode. The method of claim 13, The method of manufacturing an active matrix organic light emitting device further comprising a silicon insulating film between the low refractive index optical film and the first electrode. A substrate in which a plurality of pixel regions and a seal pattern region are defined around the pixel region; A low refractive index optical film formed on a substrate corresponding to the pixel region except for the seal pattern region; A first electrode formed on the optical film; An organic light emitting layer formed on the first electrode; A second electrode formed on the organic light emitting layer; A seal pattern formed in the seal pattern region; Passive matrix organic light emitting device comprising a. The method of claim 15, The first electrode is an anode electrode for injecting holes into the light emitting layer, and the second electrode is a cathode electrode (cathode electrode) for injecting electrons into the light emitting layer (passive matrix type organic light emitting device). The method of claim 15, The low refractive index optical film is patterned in pixel units, and configured to be in direct contact with the first electrode. The method of claim 17, Passive matrix type organic light emitting device further comprising a silicon insulating film between the low refractive index optical film and the first electrode. Defining a plurality of pixel regions on the substrate and a seal pattern region around the pixel region; Forming a low refractive index optical film on a substrate corresponding to the pixel region except for the seal pattern region; Forming a first electrode on top of the optical film; Forming an organic emission layer on the first electrode; Forming a second electrode on the organic light emitting layer; Forming a seal pattern on a substrate corresponding to the seal pattern region; Passive matrix type organic light emitting device manufacturing method comprising a. The method of claim 19, The first electrode is an anode electrode (hole electrode) for injecting a hole in the light emitting layer, and the second electrode is a cathode electrode (cathode electrode) for injecting electrons into the light emitting layer (passive electrode) manufacturing method of a passive organic light emitting device. The method of claim 19, The first electrode is a passive matrix organic light emitting device manufacturing method comprising a transparent conductive metal having a high work function, such as indium tin oxide (ITO) and indium zinc oxide (IZO). The method of claim 19, The second electrode may be a passive matrix organic material composed of a dilution layer (LiF / Al) including aluminum or one selected from a group of conductive metals including calcium (Ca), aluminum (Al), and magnesium (Mg). Electroluminescent device manufacturing method. The method of claim 19, The low refractive index optical film is patterned in units of pixels, and is configured to directly contact the first electrode. The method of claim 23, Passive matrix type organic light emitting device further comprising a silicon insulating film between the low refractive index optical film and the first electrode.