KR102307088B1 - Interconnect fault diagnosis device using reference Through Silicon Via and the method thereof - Google Patents

Abstract

The present invention relates to an interconnection failure diagnosis apparatus and method for diagnosing the presence or absence of a failure and a failure type using comparator output results of a reference through-electrode and a measurement target through-electrode, and a low-frequency input to each of a reference through-electrode and a measurement target through-electrode. A low-frequency signal generating unit for inputting a signal, a comparator for comparing an output signal difference from a low-frequency output signal that has passed through the reference through-electrode and the measurement target through-electrode through the low-frequency signal generating unit, and the comparator and a failure diagnosis unit for diagnosing the presence or absence of a failure and a failure type of the through-electrode to be measured by using the comparison result.

Description

Interconnect fault diagnosis device using reference Through Silicon Via and the method thereof

The present invention relates to an interconnection failure diagnosis apparatus and method for diagnosing a failure using a reference penetrating electrode, and more particularly, diagnosing the presence or absence of a failure and the type of failure using the comparator output result of the reference through electrode and the measurement target through electrode. It's about technology.

Efforts to increase the degree of integration of chips are continuing, but there is a limit to increasing the degree of integration per chip area. To overcome this limitation, TSV (Through Silicon Via, TSV) has been proposed. TSV is an example of 3D integration technology that stacks unpackaged dies. TSV can solve problems such as operation speed, power consumption, manufacturing cost, and heat as well as circuit integration, so many studies are being actively conducted.

As the use of such TSVs increases, interest in test technologies to check the failure of TSVs is also continuing.

Conventionally, boundary scan technology and DC measurement technology and network analyzer equipment or impedance measurement equipment are mainly used as methods for checking interconnection failure.

However, since the boundary scan technology is used to determine the interconnection state such as open and short in each path through which the injected signal moves, only open and short As it can be confirmed, there was a disadvantage that the coverage of fault diagnosis was low, and the DC measurement technology also had a disadvantage of low coverage. In addition, a network analyzer device or an impedance measuring device has a limitation that conditions for accurate measurement are difficult.

An object of the present invention is to improve the low fault diagnosis coverage (or test coverage) of the existing boundary scan technology and DC measurement technology through the comparator output result using the reference through-electrode, and to solve the difficult measurement conditions of network analyzer equipment and impedance measurement equipment. want to improve

In the interconnection failure diagnosis apparatus for diagnosing a failure of a measurement target through electrode using a reference through silicon via (TSV) as a reference according to an embodiment of the present invention, each of the reference through electrode and the measurement target through electrode A low-frequency signal generating unit for inputting a low-frequency input signal to a low-frequency signal generating unit, a comparator for comparing an output signal difference from the low-frequency output signal passing through the reference through-electrode and the measuring target through-electrode through the low-frequency signal generating unit, and the comparison and a failure diagnosis unit for diagnosing the presence or absence of a failure and a failure type with respect to the through-electrode to be measured by using the comparison result passed through the unit.

The reference through-electrode may be spaced apart from a through-electrode die including a plurality of through-electrodes at a predetermined distance.

The low-frequency signal generator may input the same low-frequency input signal to the reference through-electrode and the measurement target through-electrode of any one of a plurality of through-electrodes formed on the through-electrode die.

The low frequency input signal may pass through the comparator and amplified by a difference between the output signals.

The signal amplified by the comparator may be converted into a digital value through the ADC.

The comparator may calculate and compare a difference between the output signals for each through-electrode from the low-frequency output signal converted into a digital value by passing through the reference through-electrode and the through-electrode to be measured.

The failure diagnosis unit may primarily determine whether there is a failure in the through-electrode to be measured based on the comparison result due to the difference in the output signals, and secondarily determine the failure type through frequency variation.

The comparison result may be amplified and output by 0V when there is no difference in the output signals and by the difference voltage when there is a difference in the output signals.

In addition, the failure diagnosis apparatus according to an embodiment of the present invention may further include a controller for storing the diagnosis result of the presence or absence of a failure and the failure type of the through-electrode to be measured in a memory and outputting the result to a display.

The controller may change and designate any one of the through-electrodes to be measured among the plurality of through-electrodes formed in the through-electrode die (TSV die) according to a cycle for diagnosing the failure of the through-electrode.

In the method for diagnosing a failure of a through-electrode to be measured using a reference through-electrode (TSV) as a reference according to an embodiment of the present invention, the reference through-electrode and the through-electrode to be measured are each inputting a low-frequency input signal to, comparing an output signal difference from the low-frequency output signal passing through the reference through-electrode and the through-electrode to be measured, and using the comparison result for the through-electrode to be measured and diagnosing the presence of a failure and the type of failure.

The input of the low-frequency input signal may include inputting the same low-frequency input signal to the reference through-electrode and the measurement target through-electrode of any one of a plurality of through-electrodes formed on the through-electrode die.

The comparing of the output signal difference may include calculating a difference between the output signals for each through electrode from the low-frequency output signal converted into a digital value by passing through the reference through-electrode and the measurement target through-electrode.

The step of diagnosing the presence or absence of a failure and the failure type may include firstly determining the presence or absence of a failure in the through-electrode to be measured based on the comparison result due to the difference in the output signal, and secondarily determining the failure type through frequency variable can do.

In addition, the fault diagnosis method according to an embodiment of the present invention stores the diagnosis result of the failure and failure type of the through-electrode to be measured in a memory, and outputs it on a display, and according to the cycle of diagnosing the failure of the through-electrode. , changing and designating one of the through-electrodes to be measured among the plurality of through-electrodes formed in the through-electrode die (TSV die).

According to an embodiment of the present invention, a difference value with high accuracy is obtained by using a comparator (hereinafter referred to as a 'comparator') capable of canceling temperature and other variation factors of power noise. , it can improve the fault diagnosis coverage.

In addition, according to the embodiment of the present invention, by first determining the presence or absence of a failure through the output signal that has passed through the comparator, and secondarily determining the failure type through frequency variation, the measurement result of the actual failure sample is obtained. Through this, a data scatter plot for a specific type of failure model can be obtained and used for the purpose of improving test coverage and reducing detection time.

1 is a diagram to explain a detailed configuration of a failure diagnosis apparatus according to an embodiment of the present invention.
2 is a schematic diagram illustrating a simulation for diagnosing a failure of a through electrode according to an embodiment of the present invention.
3 to 7 are diagrams showing result data for fault diagnosis according to an embodiment of the present invention.
8 is a flowchart illustrating an operation of a fault diagnosis method according to an embodiment of the present invention.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited or limited by the examples. In addition, like reference numerals in each figure denote like members.

In addition, the terms used in this specification are terms used to properly express a preferred embodiment of the present invention, which may vary depending on the intention of a viewer or operator, or a custom in the field to which the present invention belongs. Accordingly, definitions of these terms should be made based on the content throughout this specification.

The failure diagnosis apparatus and method proposed by the present invention compares the comparator output result passing the reference through-electrode (reference TSV) and the measurement-target through-electrode (measurement target TSV) to determine whether there is a failure in the measurement target TSV and the failure type. Diagnosis is the gist of it.

According to the present invention, it is possible to improve test coverage and reduce detection time by first determining the presence or absence of a failure or failure with respect to the measurement target TSV using a reference TSV and a comparator, and secondarily determining the failure type or failure type. An apparatus and a method thereof are proposed.

Hereinafter, the present invention described above will be described in more detail with reference to FIGS. 1 to 8 .

1 is a diagram to explain a detailed configuration of a failure diagnosis apparatus according to an embodiment of the present invention.

Referring to FIG. 1 , the failure diagnosis apparatus according to an embodiment of the present invention diagnoses the presence or absence of a failure and the type of failure by using the comparator output results of a reference through-electrode and a measurement target through-electrode.

To this end, the failure diagnosis apparatus 100 according to the embodiment of the present invention includes a low-frequency signal generator 110 , a comparison unit 120 , and a failure diagnosis unit 130 .

The low-frequency signal generator 110 inputs a low-frequency input signal to each of the reference through-electrode (reference TSV, 210) and the measurement target through-electrode (measurement target TSV, 221).

The reference through-electrode 210 is spaced apart from the through-electrode die 220 including a plurality of through-electrodes at a predetermined distance, and may be a normal through-electrode to be compared with the measurement target through-electrode 221 . .

For example, the through electrode die 220 includes a first through electrode 221 , a second through electrode 222 , a third through electrode 223 , and a fourth through electrode 224 . The failure diagnosis apparatus 100 according to an example may perform a cycle of diagnosing the presence or absence of a failure and a failure type by designating the first through electrode 221 as the measurement target through electrode 221 to be measured. . In this case, the measurement target through-electrode 221 is a through-electrode TSV of any one of the through-electrode dies 220 including a plurality of through-electrodes, and the failure diagnosis apparatus 100 according to the embodiment of the present invention is to be measured. When the cycle for performing fault diagnosis on the through electrode 221 is completed, the other one of the through electrode dies 220, for example, the second through electrode 222 and the third through electrode ( 223) and the fourth through electrode 224 may be designated as the measurement target through electrode and the cycle may be repeated. Here, it goes without saying that the number of through-electrodes forming the through-electrode die and designation of the through-electrodes to be measured are not limited to the above description.

According to an embodiment of the present invention, the first through electrode 221 , the second through electrode 222 , the third through electrode 223 , and the fourth through electrode 224 included in the through electrode die 220 . When the presence or absence of a failure and the type of failure are diagnosed, as shown in FIG. 1 , the first through electrode 221 and the second through electrode 222 are normal through electrodes (normal TSV), and the third through electrode 223 and the second through electrode 223 are The 4 through electrode 224 may be an abnormal through electrode (abnormal TSV).

The low-frequency signal generator 110 may input the same low-frequency input signal to any one of the reference through-electrode 210 and the plurality of through-electrodes formed on the through-electrode die 220 to the measurement target through-electrode 221 .

The comparator (or comparator, 120 ) compares an output signal difference from the low-frequency output signal that has passed through the reference through-electrode 210 and the measurement target through-electrode 221 through the low-frequency signal generating unit 110 .

The low-frequency input signal generated by the low-frequency signal generator 110 and injected into each of the reference through-electrode 210 and the measurement target through-electrode 221 may pass through the comparator 120 and amplified by the difference between the output signals. Thereafter, the signal amplified by the comparator 120 is converted into a digital value through an analog-digital converter (ADC) 121 , and may reach a flip-flop 122 .

Accordingly, the comparator 120 calculates and compares the difference between the output signals for each through-electrode from the low-frequency output signal that has passed through the reference through-electrode 210 and the measurement target through-electrode 221 and converted into a digital value. According to an embodiment, if there is no difference in the output signals for the two through electrodes 210 and 221 , 0V may be output, and if there is a difference in the output signals, the difference value may be amplified and output by the difference voltage.

The failure diagnosis unit 130 diagnoses the presence or absence of a failure and the failure type of the through-electrode 221 to be measured by using the comparison result passed through the comparison unit 120 .

For example, if there is no difference in the output signals, the failure diagnosis unit 130 diagnoses that the measurement target through-electrode 221 is the same normal through-electrode (normal TSV) as the reference through-electrode 210, which is a normal through-electrode, If there is a difference in the output signal, the failure diagnosis unit 130 may diagnose that the measurement target through-electrode 221 is an abnormal through-electrode (abnormal TSV) by the amplified and output difference value.

The failure diagnosis unit 130 of the failure diagnosis apparatus 100 according to the embodiment of the present invention primarily determines the presence or absence of a failure in the through electrode 221 to be measured through a comparison result due to a difference in output signals, and 2 Second, it is possible to determine the type of failure through frequency variation. In detail, the failure diagnosis unit 130 determines the presence or absence of a failure in the through-electrode 221 to be measured based on the difference in output signals, and determines the type of failure in the through-electrode 221 to be measured through frequency variation. , as shown in FIG. 1 , the presence and type of abnormal through-electrodes 223 and 224 such as deviation or defect of the through-electrode may be diagnosed.

In addition, the control unit 140 of the failure diagnosis apparatus 100 according to the embodiment of the present invention may store the diagnosis result of the presence or absence of a failure and the failure type of the through-electrode 221 to be measured in the memory and output the result to the display. . For example, the failure diagnosis apparatus 100 according to an embodiment of the present invention is connected to a display unit (not shown) capable of outputting a diagnosis result, and a diagnosis of the through-electrode 221 to be measured is output at each cycle. After saving the result in memory, it can be output to the display.

The controller 140 may change and designate any one of the through-electrodes to be measured among the plurality of through-electrodes formed in the through-electrode die 220 according to a cycle of diagnosing the failure of the through-electrode. have. As described above, in the through-electrode die 220 including the first through-electrode 221 , the second through-electrode 222 , the third through-electrode 223 and the fourth through-electrode 224 , the first After a cycle of diagnosing the presence or absence of a failure and a failure type is performed by designating the through electrode 221 as the through electrode 221 to be measured to be measured and the cycle is completed, the controller 140 controls the other of the through electrode die 220 . One through-electrode TSV, for example, any one of the second through-electrode 222 , the third through-electrode 223 , and the fourth through-electrode 224 may be designated as another measurement target through-electrode.

2 is a schematic diagram illustrating a simulation for diagnosing a failure of a through electrode according to an embodiment of the present invention.

Referring to FIG. 2 , the low-frequency input signal passing through the normal through-electrode (Faultfree TSV) and the abnormal through-electrode (abnormal TSV) may be amplified by the difference between the two signals through the comparator 120 . At this time, the fault diagnosis apparatus according to the embodiment of the present invention can calculate the difference between the input signal from the output signal detected through the gain value (gain, for example, 20) of the comparator 120, and two models (Faultfree TSV, If there is no difference between the abnormal TSVs, an output of 0 V is indicated, and if there is a difference between the two models (Faultfree TSV, abnormal TSV), the output signal OUTPUT is amplified by the difference value to indicate the output.

3 to 7 are diagrams showing result data for fault diagnosis according to an embodiment of the present invention.

More specifically, FIG. 3 shows HSPICE result data for a normal through electrode (normal TSV), and FIG. 4 shows HSPICE result data for an abnormal through electrode (abnormal TSV) with poor pinhole. , FIG. 5 shows HSPICE result data for an abnormal through-electrode (abnormal TSV) having a defective void. In addition, FIG. 6 shows HSPICE result data for an abnormal through electrode (abnormal TSV) with an open (OPEN) defect, and FIG. 7 shows an abnormal through electrode (abnormal TSV) model with an open defect, a void defect, and a pinhole defect. did it

Referring to FIG. 3 , since there is no difference between the normal TSV and the reference TSV, it can be seen that the waveform output from the output OUTPUT is close to 0V.

Referring to FIG. 4 , in the case of an abnormal through-electrode (abnormal TSV), which exhibits a capacitive characteristic at a low frequency, the difference is not noticeable from 100 MHz to 500 MHz, but the difference value is changed according to the frequency change. It is possible to check whether there is a pinhole defect.

Referring to FIG. 5 , in the case of an abnormal through-electrode (abnormal TSV) having a defective void exhibiting an inductive characteristic, it can be seen that the difference appears linearly as the frequency increases. By changing the difference value, it is possible to check whether a void is defective.

Referring to FIG. 6 , in the case of an abnormal through-electrode (abnormal TSV) with poor open, the output (OUTPUT) is large because the difference between the normal through-electrode (Faultfree TSV) and the abnormal open-through-electrode (Open TSV) model with open failure is large. It can be seen that the maximum output is detected in

Referring to FIG. 7 , FIG. 7(a) is an abnormal TSV having an open defect, FIG. 7(b) is an abnormal TSV having a void defect, and FIG. 7 (c) shows an abnormal through-electrode (abnormal TSV) having a defective pinhole.

Accordingly, the failure diagnosis apparatus according to an embodiment of the present invention can determine whether a failure occurs primarily through the presence or absence of a difference value between the output signals passing through the comparator (or the comparator), and secondarily, the aspect of the change according to the frequency change It is possible to determine the type of failure by checking Furthermore, the failure diagnosis apparatus according to an embodiment of the present invention obtains a data scatter diagram for a specific type of failure model through the measurement result of an actual failure sample using a reference through electrode (reference TSV) and a comparator, improves test coverage, , it is possible to shorten the detection time of the diagnosis result.

8 is a flowchart illustrating an operation of a fault diagnosis method according to an embodiment of the present invention.

The method of FIG. 8 is performed by the failure diagnosis apparatus according to the embodiment of the present invention shown in FIG. 1 .

Referring to FIG. 8 , in step 810, a low-frequency input signal is input to each of the reference through-electrode and the measurement target through-electrode.

In operation 810, the same low-frequency input signal may be input to the reference through-electrode and the measurement target through-electrode among the plurality of through-electrodes formed on the through-electrode die.

In step 820, the difference between the output signal and the low-frequency output signal passing through the reference through-electrode and the measurement target through-electrode is compared.

The low-frequency input signal generated in step 810 and injected into each of the reference through-electrode and the measurement target through-electrode may pass through a comparator (or a comparator) to be amplified by the difference between the output signals. Thereafter, the signal amplified through the comparator (or comparator) is converted into a digital value through an analog-digital converter (ADC), and may reach a flip-flop.

Accordingly, in step 820, a difference between the output signals for each through-electrode may be calculated and compared from the low-frequency output signal converted to a digital value by passing through the reference through-electrode and the measurement target through-electrode. According to an embodiment, if there is no difference in the output signals for the two through electrodes (the reference through electrode and the measurement target through electrode), 0V is output, and when there is a difference in the output signals, the difference value is amplified and output by the difference voltage. .

In operation 830, the presence or absence of a failure and a failure type of the through-electrode to be measured are diagnosed using the comparison result.

For example, in step 830, if there is no difference in the output signal, it is diagnosed that the measurement target through-electrode is the same normal through-electrode (normal TSV) as the reference through-electrode, which is a normal through-electrode. It can be diagnosed that the measurement target through-electrode is an abnormal through-electrode (abnormal TSV) by the output difference value.

In step 830 of the failure diagnosis method according to an embodiment of the present invention, the presence or absence of a failure in the through-electrode to be measured is primarily determined through the comparison result due to the difference in output signals, and the failure type is secondarily determined through frequency variable. can do.

In addition, the failure diagnosis method according to an embodiment of the present invention includes the steps of storing the diagnosis result of the presence/absence and failure type of the through-electrode to be measured in a memory and outputting it on a display (not shown) and diagnosing the failure of the through-electrode. The method may further include (not shown) changing and designating any one of the through-electrodes to be measured from among the plurality of through-electrodes formed on the through-electrode die (TSV die) according to the cycle.

The device described above may be implemented as a hardware component, a software component, and/or a combination of the hardware component and the software component. For example, devices and components described in the embodiments may include, for example, a processor, a controller, an arithmetic logic unit (ALU), a digital signal processor, a microcomputer, a field programmable array (FPA), It may be implemented using one or more general purpose or special purpose computers, such as a programmable logic unit (PLU), microprocessor, or any other device capable of executing and responding to instructions. The processing device may execute an operating system (OS) and one or more software applications running on the operating system. The processing device may also access, store, manipulate, process, and generate data in response to execution of the software. For convenience of understanding, although one processing device is sometimes described as being used, one of ordinary skill in the art will recognize that the processing device includes a plurality of processing elements and/or a plurality of types of processing elements. It can be seen that can include For example, the processing device may include a plurality of processors or one processor and one controller. Other processing configurations are also possible, such as parallel processors.

The software may comprise a computer program, code, instructions, or a combination of one or more thereof, which configures a processing device to operate as desired or is independently or collectively processed You can command the device. The software and/or data may be any kind of machine, component, physical device, virtual equipment, computer storage medium or apparatus, to be interpreted by or to provide instructions or data to the processing device. , or may be permanently or temporarily embody in a transmitted signal wave. The software may be distributed over networked computer systems, and stored or executed in a distributed manner. Software and data may be stored in one or more computer-readable recording media.

The method according to the embodiment may be implemented in the form of program instructions that can be executed through various computer means and recorded in a computer-readable medium. The computer-readable medium may include program instructions, data files, data structures, etc. alone or in combination. The program instructions recorded on the medium may be specially designed and configured for the embodiment, or may be known and available to those skilled in the art of computer software. Examples of the computer readable recording medium include magnetic media such as hard disks, floppy disks and magnetic tapes, optical media such as CD-ROMs and DVDs, and magnetic media such as floppy disks. - includes magneto-optical media, and hardware devices specially configured to store and execute program instructions, such as ROM, RAM, flash memory, and the like. Examples of program instructions include not only machine language codes such as those generated by a compiler, but also high-level language codes that can be executed by a computer using an interpreter or the like. The hardware devices described above may be configured to operate as one or more software modules to perform the operations of the embodiments, and vice versa.

As described above, although the embodiments have been described with reference to the limited embodiments and drawings, various modifications and variations are possible from the above description by those skilled in the art. For example, the described techniques are performed in a different order than the described method, and/or the described components of the system, structure, apparatus, circuit, etc. are combined or combined in a different form than the described method, or other components Or substituted or substituted by equivalents may achieve an appropriate result.

Therefore, other implementations, other embodiments, and equivalents to the claims are also within the scope of the following claims.

Claims (15)

An apparatus for diagnosing a failure of a through-electrode to be measured using a reference through-silicon via (TSV), which is a reference, comprising:
a low-frequency signal generator for inputting a low-frequency input signal to each of the reference through-electrode and the measurement target through-electrode;
a comparator for comparing an output signal difference from a low-frequency output signal passing through the reference through-electrode and the measurement target through-electrode through the low-frequency signal generating unit;
a failure diagnosis unit for diagnosing the presence or absence of a failure and a failure type of the through-electrode to be measured using the comparison result passed through the comparison unit; and
and a control unit for storing the diagnosis result of the failure or failure type of the through-electrode to be measured in a memory and outputting it to a display,
The low-frequency signal generator
Any one of the reference through-electrode and the plurality of through-electrodes formed on the through-electrode die and the reference through-electrode, which are spaced apart from a through-electrode die including a plurality of through-electrodes (TSV die) and are spaced apart from each other by a predetermined distance, which is a comparison target of the through-electrode to be measured inputting the same low-frequency input signal to one through-electrode to be measured,
the control unit
According to the cycle for diagnosing the failure of the through-electrode, any one of the through-electrodes to be measured among the plurality of through-electrodes formed on the through-electrode die is changed and designated;
The fault diagnosis unit
If there is no difference in the output signal, 0V, if there is a difference in the output signal, the difference voltage is amplified and output. Through the comparison result, it is primarily determined whether there is a failure in the through-electrode to be measured, and secondarily, the frequency is variable. A failure diagnosis device, characterized in that for determining the failure type through.
delete delete According to claim 1,
The low-frequency input signal is
and amplifying the difference between the output signals through the comparator.
5. The method of claim 4,
The signal amplified through the comparator is
A troubleshooting device that is converted to a digital value through an ADC.
6. The method of claim 5,
The comparison unit
and calculating and comparing a difference between the output signals for each through-electrode from the low-frequency output signal converted to a digital value by passing through the reference through-electrode and the through-electrode to be measured.
delete delete delete delete In the method for diagnosing a failure of a through-electrode to be measured using a reference through-silicon via (TSV) as a reference, the method for diagnosing an interconnection failure,
inputting a low-frequency input signal to each of the reference through-electrode and the measurement target through-electrode;
comparing an output signal difference from the low-frequency output signal passing through the reference through-electrode and the measurement target through-electrode; and
Comprising the step of diagnosing the presence or absence of a failure and the failure type of the through-electrode to be measured using the comparison result,
storing in a memory a diagnosis result of the presence/absence of a failure and a failure type of the through-electrode to be measured and outputting the result on a display; and
The method further comprises the step of changing and designating any one of the through-electrodes to be measured from among the plurality of through-electrodes formed in the through-electrode die (TSV die) according to the cycle for diagnosing the failure of the through-electrode,
The step of inputting the low-frequency input signal is
The measurement of any one of the reference through-electrode that is a comparison target of the through-electrode to be measured and the through-electrode formed in the through-electrode die and positioned spaced apart from the through-electrode die including a plurality of through-electrodes by a predetermined distance Input the same low-frequency input signal to the target through-electrode,
The step of diagnosing the presence or absence of the failure and the type of failure is
If there is no difference in the output signal, 0V, if there is a difference in the output signal, the difference voltage is amplified and output. Through the comparison result, it is primarily determined whether there is a failure in the through-electrode to be measured, and secondarily, the frequency is variable. A method for diagnosing failure, characterized in that for determining the type of failure through
delete 12. The method of claim 11,
The step of comparing the output signal difference is
and comparing the difference between the output signals for each through-electrode from the low-frequency output signal converted to a digital value by passing through the reference through-electrode and the through-electrode to be measured.
delete delete

Images