KR102300567B1 - Organic light emitting display device and method of manufacturing the same - Google Patents

Abstract

An organic light emitting display device and a method of manufacturing the organic light emitting display device are provided. An organic light emitting display device according to an embodiment of the present invention is provided. The lower substrate has a display area, a non-display area, and a pad area extending from one side of the non-display area. The thin film transistor and the organic light emitting diode are disposed in the display area, and the pad electrode is disposed in the pad area. The passivation layer covers the organic light emitting device and exposes the pad electrode. The upper substrate is disposed to face the display area and the non-display area of the lower substrate. The adhesive layer adheres the upper substrate and the lower substrate. The arcing barge layer is disposed to cover the upper surface of the upper substrate. In the organic light emitting diode display according to an embodiment of the present invention, an arcing preventing layer disposed to cover the upper surface of the upper substrate is used, so that the occurrence of arcing in the upper substrate during the passivation layer formation process may be prevented.

Description

Organic light emitting display device and organic light emitting display device manufacturing method

The present invention relates to an organic light emitting display device and a method for manufacturing an organic light emitting display device, and more particularly, to an organic light emitting display device and a method for manufacturing an organic light emitting display device capable of solving problems caused by forming a passivation layer using a mask is about

The organic light emitting display device is a self-emission type display device, and unlike a liquid crystal display device, it does not require a separate light source, so it can be manufactured in a lightweight and thin form. In addition, the organic light emitting diode display is being studied as a next-generation display because it is advantageous in terms of power consumption due to low voltage driving, and has excellent color realization, response speed, viewing angle, and contrast ratio (CR).

The organic light emitting diode of the organic light emitting diode display is very vulnerable to moisture and oxygen. Accordingly, it is very important to seal the organic light emitting diode in the organic light emitting display device manufacturing process to block the penetration of moisture and oxygen from the outside of the organic light emitting display device. Accordingly, an encapsulation process for blocking penetration of moisture and oxygen is employed in the organic light emitting display device manufacturing method. In the conventional encapsulation process used in a typical organic light emitting display device manufacturing method, a passivation layer is formed to cover the organic light emitting device, an adhesive layer is formed to seal the organic light emitting device, and an upper substrate and a lower substrate are bonded to each other, thereby preventing the organic light emitting device from moisture. and to minimize damage by oxygen.

In order to form the passivation layer as described above, a deposition process such as, for example, a chemical vapor deposition (CVD) process is used in a conventional organic light emitting display device manufacturing method. Specifically, in the conventional organic light emitting display device manufacturing method, in order to form the passivation layer to cover only the display portion without covering the pad electrode, a mask having an open region corresponding to a region where the passivation layer is to be formed and a blocking region corresponding to the pad electrode. A method of depositing a material for a passivation layer using

However, in the conventional method of manufacturing an organic light emitting display device in which a passivation layer is deposited using a mask as described above, various problems exist due to the use of the mask.

First, the tolerance of the passivation layer forming process increases due to the deposition shadow according to the use of the mask, and the size of the bezel region also increases. Accordingly, there is a method of reducing the thickness of the mask in order to reduce the deposition shadow. However, since the mechanical strength of the mask is lowered when the thickness of the mask is reduced, there is a problem that the mask is easily deformed or damaged during mask handling or processing.

Next, in order to accurately form the passivation layer at a desired position, the substrate and the mask must be fixed in close contact with each other. However, when the substrate and the mask are not fixed and the mask is lifted, the passivation layer may be formed to invade the pad electrode. The lifting phenomenon of the mask may be caused by deformation of the mask due to stress generated by repeatedly using the same mask in a plurality of film forming processes. In addition, the passivation layer may be incorrectly formed due to misalignment between the lower substrate and the mask.

In general, equipment for forming the passivation layer is a top-down deposition equipment. That is, a mask is placed on a lower substrate, and a passivation layer is formed through a top-down deposition process in which deposition is performed on the mask and the lower substrate toward the lower substrate. In this case, as the same mask is repeatedly used in the film forming process, the material of the passivation layer is also accumulated and formed on the mask. Accordingly, the foreign material generated in the mask may move toward the display unit or the passivation layer, resulting in driving failure of the organic light emitting display device or malfunctioning of the passivation layer.

In addition, the mask used for forming the passivation layer is quite expensive, and additional costs are incurred in purchasing equipment for transporting, inputting, and taking out such a mask. In addition, the cost for managing and maintaining/repairing the mask is also continuously incurred.

[Related technical literature]

1. Manufacturing method of flat panel display device (Korean Patent Application No. 10-2004-0090021)

The inventors of the present invention have provided a new method of manufacturing an organic light emitting display device and a new organic structure in order to solve problems caused by using a mask to form a passivation layer in the conventional organic light emitting display device manufacturing method as described above. A light emitting display device was invented.

Accordingly, the problem to be solved by the present invention is a method for manufacturing an organic light emitting display device employing a method of forming a material for a passivation layer on the entire surface of a lower substrate without using a mask and then exposing a pad electrode through an etching process, and by the method To provide a manufactured organic light emitting diode display.

Another object of the present invention is to provide an organic light emitting display device including an arcing prevention layer for preventing an arcing phenomenon from occurring in an upper substrate made of a metal material during an etching process, and manufacturing of the organic light emitting display device to provide a way

The problems of the present invention are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

An organic light emitting display device according to an embodiment of the present invention is provided. The lower substrate has a display area, a non-display area, and a pad area extending from one side of the non-display area. The thin film transistor and the organic light emitting diode are disposed in the display area, and the pad electrode is disposed in the pad area. The passivation layer covers the organic light emitting device and exposes the pad electrode. The upper substrate is disposed to face the display area and the non-display area of the lower substrate. The adhesive layer adheres the upper substrate and the lower substrate. An anti-arching layer is disposed to cover the upper surface of the upper substrate. In the organic light emitting diode display according to an embodiment of the present invention, an arcing preventing layer disposed to cover the upper surface of the upper substrate is used, so that the occurrence of arcing in the upper substrate during the passivation layer formation process may be prevented.

According to another feature of the present invention, the upper substrate is characterized in that it is made of a metal material.

According to another feature of the present invention, the anti-arching layer is characterized in that the metal material constituting the upper substrate is an oxidized layer.

According to another feature of the present invention, the arcing prevention layer is characterized in that it is arranged to further cover the side surface of the upper substrate.

According to another feature of the present invention, the anti-arching layer is arranged to seal the upper substrate.

According to another feature of the present invention, the etch selectivity of the anti-arching layer to the etchant for etching the passivation layer is less than or equal to the etch selectivity of the passivation layer to the etchant for etching the passivation layer. .

According to another feature of the present invention, the anti-arch layer is silicon nitride (silicon nitride), silicon oxide (silicon oxide), silicon oxynitride (silicon oxynitride), aluminum oxide (aluminum oxide), aluminum oxynitride (aluminum oxynitride) ), characterized in that it has a single-layer or multi-layer structure consisting of any one of.

According to another feature of the present invention, the end of the passivation layer and the end of the upper substrate are characterized in that corresponding to each other.

According to another feature of the present invention, the passivation layer includes a sealing portion and an inclined portion extending from one side of the sealing portion, and a boundary between the sealing portion and the inclined portion corresponds to an end of the upper substrate.

A method of manufacturing an organic light emitting display device according to an embodiment of the present invention is provided. A method of manufacturing an organic light emitting display device includes: providing a lower substrate having a display area, a non-display area, and a pad area extending from one side of the non-display area; forming a thin film transistor in the display area and a pad electrode in the pad area; Forming an organic light emitting device on a thin film transistor, disposing a material for a passivation layer in a display area, a non-display area and a pad area to cover the organic light emitting device and the pad electrode, and an anti-arching layer material to cover the upper surface of the upper substrate disposing; bonding an upper substrate and a lower substrate corresponding to the display area and the non-display area using an adhesive layer; and etching a material for a passivation layer disposed in the pad area to expose the pad electrode. The method of manufacturing an organic light emitting diode display according to an embodiment of the present invention includes disposing a material for an anti-arching layer to cover the upper surface of the upper substrate, and includes performing a dry etching process for forming a passivation layer on the upper substrate. It is possible to prevent arcing from occurring. Accordingly, in the method for manufacturing an organic light emitting display device according to an embodiment of the present invention, it is possible to pattern the passivation layer through a dry etching process. can be formed in the , and thus, all of the various problems caused by using a separate mask to form the passivation layer can be solved.

According to another feature of the present invention, the upper substrate is characterized in that it is made of a metal material.

According to another feature of the present invention, the step of disposing the material for the anti-arching layer is a step of disposing the material for the anti-arching layer so that the material for the anti-arching layer covers the upper surface and the side surface of the upper substrate.

According to another feature of the present invention, the step of disposing the material for the anti-arching layer is a step of forming the material for the anti-arching layer so that the material for the anti-arching layer seals the upper substrate.

According to another feature of the present invention, when the material for the anti-arching layer and the material for the passivation layer are the same, the thickness of the material for the anti-arching layer is greater than the thickness of the material for the passivation layer disposed in the pad area.

According to another feature of the present invention, when the material for the anti-arching layer and the material for the passivation layer are different, the etching selectivity of the material for the anti-arching layer to the etchant for etching the material for the passivation layer is the etchant for etching the material for the passivation layer. It is characterized in that it is less than or equal to the etching selectivity of the material for the passivation layer.

According to another feature of the present invention, the etching step is a step of dry etching the material for the passivation layer.

According to another feature of the present invention, the step of forming the material for the anti-arching layer includes the step of forming the anti-arching layer using any one of sputtering, atomic layer deposition (ALD), and chemical vapor deposition (CVD). characterized by including.

According to another feature of the present invention, the step of disposing the material for the anti-arching layer comprises forming the material for the anti-arching layer in such a way that an upper portion of the upper substrate is oxidized.

The details of other embodiments are included in the detailed description and drawings.

The present invention employs a method of exposing the pad electrode using an etching process to form a passivation layer exposing the pad electrode without using a mask.

In addition, according to the present invention, it is possible to prevent an arcing phenomenon from occurring in the upper substrate during the etching process, thereby preventing the components of the upper organic light emitting diode display from being burned.

In addition, the present invention can improve various process defects and panel defects that occur when the passivation layer is formed using a mask, and can suppress the increase in the size of the bezel area due to deposition shadows and process tolerances that occur when using the mask. have.

The effect according to the present invention is not limited by the contents exemplified above, and more various effects are included in the present specification.

1 is a schematic plan view illustrating an organic light emitting diode display according to an exemplary embodiment.
FIG. 2 is a schematic cross-sectional view of an organic light emitting diode display according to an exemplary embodiment taken along line II-II' of FIG. 1 .
3 is a schematic cross-sectional view illustrating an organic light emitting diode display according to another exemplary embodiment.
4 is a schematic cross-sectional view illustrating an organic light emitting diode display according to another exemplary embodiment.
5 is a flowchart illustrating a method of manufacturing an organic light emitting diode display according to an exemplary embodiment.
6A to 6D are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to an exemplary embodiment.

Advantages and features of the present invention and methods of achieving them will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in a variety of different forms, and only these embodiments allow the disclosure of the present invention to be complete, and common knowledge in the technical field to which the present invention belongs It is provided to fully inform the possessor of the scope of the invention, and the present invention is only defined by the scope of the claims.

The shapes, sizes, proportions, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of the present invention are illustrative and the present invention is not limited to the illustrated matters. Like reference numerals refer to like elements throughout. In addition, in describing the present invention, if it is determined that a detailed description of a related known technology may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted. When 'including', 'having', 'consisting', etc. mentioned in this specification are used, other parts may be added unless 'only' is used. When a component is expressed in the singular, the case in which the plural is included is included unless otherwise explicitly stated.

In interpreting the components, it is interpreted as including an error range even if there is no separate explicit description.

In the case of a description of the positional relationship, for example, when the positional relationship of two parts is described as 'on', 'on', 'on', 'beside', etc., 'right' Alternatively, one or more other parts may be positioned between the two parts unless 'directly' is used.

Reference to a device or layer “on” another device or layer includes any intervening layer or other device directly on or in the middle of another device.

Although first, second, etc. are used to describe various elements, these elements are not limited by these terms. These terms are only used to distinguish one component from another. Accordingly, the first component mentioned below may be the second component within the spirit of the present invention.

Like reference numerals refer to like elements throughout.

The size and thickness of each component shown in the drawings are illustrated for convenience of description, and the present invention is not necessarily limited to the size and thickness of the illustrated component.

Each feature of the various embodiments of the present invention may be partially or wholly combined or combined with each other, and technically various interlocking and driving are possible, as will be fully understood by those skilled in the art, and each embodiment may be independently implemented with respect to each other, It may be possible to implement together in a related relationship.

Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a schematic plan view illustrating an organic light emitting diode display according to an exemplary embodiment. FIG. 2 is a schematic cross-sectional view of an organic light emitting diode display according to an exemplary embodiment taken along line II-II′ of FIG. 1 . 1 and 2 , the organic light emitting diode display 100 includes a lower substrate 110 , a thin film transistor 120 , an organic light emitting diode 160 , a pad electrode 130 , a passivation layer 140 , and an upper substrate. 119 , an adhesive layer 117 , and an anti-arching layer 150 . The organic light emitting diode display 100 according to an embodiment of the present invention is a bottom emission type organic light emitting display device in which light emitted from the organic light emitting diode 160 is emitted to the lower substrate 110 .

The lower substrate 110 supports various elements of the organic light emitting diode display 100 . The lower substrate 110 is formed of an insulating material. For example, the lower substrate 110 may be made of an insulating material such as glass or plastic.

1 and 2 , the lower substrate 110 includes a display area DA, a non-display area NA, and a pad area PA. The display area DA is an area in which an image is displayed in the organic light emitting diode display 100 , and refers to an area in which the organic light emitting diode 160 is disposed. The non-display area NA is an area in which an image is not displayed in the organic light emitting diode display 100 , and refers to an area where the upper substrate 119 and the lower substrate 110 overlap, except for the display area DA. . 1 , the non-display area NA may surround the display area DA. The pad area PA is an area in which the pad electrode 130 is formed and refers to an area of the lower substrate 110 that is not covered by the upper substrate 119 . The pad area PA extends from one side of the non-display area NA. The pad area PA is an area to which FPCB, COF, COG, etc. for providing various signals for driving the organic light emitting diode display 100 are bonded.

A thin film transistor 120 including an active layer 122 , a gate electrode 121 , a source electrode 123 , and a drain electrode 124 is disposed in the display area DA of the lower substrate 110 . Specifically, the buffer layer 111 is formed on the lower substrate 110 , and the active layer 122 is formed on the buffer layer 111 . In some embodiments, the buffer layer 111 may be omitted, and in this case, the active layer 122 may be formed on the lower substrate 110 . A gate insulating layer 112 for insulating the active layer 122 and the gate electrode 121 is formed on the active layer 122 , and the gate electrode overlaps the active layer 122 on the gate insulating layer 112 . (121) is formed. As shown in FIG. 2 , the gate insulating layer 112 may be formed only between the gate electrode 121 and the active layer 122 , or may be formed on the entire surface of the lower substrate 110 . An interlayer insulating layer 113 is formed on the gate electrode 121 and the gate insulating layer 112 . A source electrode 123 and a drain electrode 124 are formed on the interlayer insulating layer 113 , and the source electrode 123 and the drain electrode 124 are electrically connected to the active layer 122 . In this specification, only the driving thin film transistor is illustrated among various thin film transistors 120 that may be included in the organic light emitting diode display 100 for convenience of description. In addition, although the thin film transistor 120 is described as having a coplanar structure in this specification, a thin film transistor having an inverted staggered structure may also be used.

The buffer layer 111 and the interlayer insulating layer 113 are also formed in the non-display area NA and the pad area PA. That is, the buffer layer 111 and the interlayer insulating layer 113 are formed on the entire surface of the lower substrate 110 , and are formed in all of the display area DA, the non-display area NA, and the pad area PA.

The pad electrode 130 is disposed in the pad area PA of the lower substrate 110 . The pad electrode 130 may be electrically connected to an electrode formed in an external module bonded to the pad electrode 130 , such as FPCB, COF, or COG. Although it is illustrated in FIG. 1 that the pad electrode 130 is formed in the central portion of the pad area PA, the present invention is not limited thereto, and the pad electrode 130 may be formed at any position within the pad area PA.

Referring to FIG. 2 , the pad electrode 130 is formed of the same material as the source electrode 123 and the drain electrode 124 of the thin film transistor 120 . That is, the pad electrode 130 may be simultaneously formed in the same process as the source electrode 123 and the drain electrode 124 of the thin film transistor 120 . In some embodiments, the pad electrode 130 may be formed of the same material as any conductive material formed in the display area DA. For example, the pad electrode 130 may be formed of the same material as the gate electrode 121 of the thin film transistor 120 , or may be formed of the same material as the anode 161 of the organic light emitting diode 160 . In addition, in some embodiments, the pad electrode 130 is formed of the same material as at least two of the gate electrode 121 , the source electrode 123 , the drain electrode 124 , and the anode 161 of the thin film transistor 120 . It may be configured as a multi-layer structure.

A lower passivation layer 114 is formed on the thin film transistor 120 . Specifically, the lower passivation layer 114 is formed to cover the source electrode 123 and the drain electrode 124 of the thin film transistor 120 in the display area DA, and the display area DA and the non-display area NA. ) and on the interlayer insulating layer 113 in the pad area PA. In addition, the lower passivation layer 114 is formed to cover the edge of the pad electrode 130 in order to expose a portion of the pad electrode 130 in the pad area PA.

A planarization layer 115 is formed on the lower passivation layer 114 . The planarization layer 115 is an insulating layer for planarizing an upper portion of the thin film transistor 120 . The planarization layer 115 is formed in the display area DA and is not formed in the pad area PA. In some embodiments, the planarization layer 115 may be formed in the non-display area NA and the pad area PA, but in this case, the planarization layer 115 does not cover the pad electrode 130 .

Referring to FIG. 2 , the organic light emitting diode 160 is formed on the thin film transistor 120 in the display area DA. The organic light emitting device 160 includes an anode 161 , an organic light emitting layer 162 , and a cathode 163 . The anode 161 is electrically connected to the thin film transistor 120 . Since the anode 161 needs to supply holes to the organic light emitting layer 162 , it is formed of a transparent conductive material having a high work function. A bank layer 116 is formed to cover the edge of the anode 161 . The organic emission layer 162 may be any one of a red organic emission layer, a green organic emission layer, a blue organic emission layer, and a white organic emission layer. In FIG. 2 , the organic light emitting layer 162 is illustrated as a single organic light emitting layer 162 formed over the entire display area DA, but the organic light emitting layer 162 is separated for each sub-pixel area of the display area DA. may be formed. A cathode 163 is formed on the organic emission layer 162 . Since the cathode 163 needs to supply electrons to the organic emission layer 162 , it is formed of a conductive material having a low work function. Since the organic light emitting diode display 100 is a bottom emission type organic light emitting display device, the cathode 163 may be formed of a metal material having excellent reflectivity. In some embodiments, when the cathode 163 is formed of a transparent conductive oxide, the organic emission layer 162 may further include a metal doped layer.

1 and 2 , the passivation layer 140 is formed on a portion of the display area DA, the non-display area NA, and the pad area PA on the lower substrate 110 . The passivation layer 140 is formed to cover the organic light emitting device 160 in the display area DA to protect the organic light emitting device 160 from infiltration of moisture or oxygen from the outside. In addition, the passivation layer 140 is formed to expose the pad electrode 130 in the pad area PA. The passivation layer 140 is an inorganic material layer such as silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, aluminum oxynitride, etc. can be formed. Although the passivation layer 140 is illustrated as having a single-layer structure in FIG. 2 , the passivation layer 140 may have a structure in which inorganic material layers and organic material layers are alternately stacked.

Referring to FIG. 2 , the passivation layer 140 includes a sealing portion 141 and an inclined portion 142 extending from one side of the sealing portion 141 . The encapsulation part 141 is a portion corresponding to the display area DA and the non-display area NA of the passivation layer 140 , and the inclined part 142 extends from one side of the encapsulation part 141 and is a pad area. The portion of the passivation layer 140 corresponding to (PA). In this case, the boundary between the sealing part 141 and the inclined part 142 corresponds to the end of the upper substrate 119 . The positional relationship between the boundary between the sealing part 141 and the inclined part 142 and the upper substrate 119 will be described later in detail. The thickness of the inclined portion 142 is decreased as the distance from one side of the sealing portion 141 is increased. That is, the sealing portion 141 of the passivation layer 140 formed in the non-display area NA has a uniform thickness, while the thickness of the inclined portion 142 of the passivation layer 140 formed in the pad area PA is It decreases as the distance from the boundary between the non-display area NA and the pad area PA increases.

The upper substrate 119 faces the lower substrate 110 . Specifically, the upper substrate 119 is disposed to face the display area DA and the non-display area NA of the lower substrate 110 . The upper substrate 119 may be formed of a metallic material such as aluminum (Al) or copper (Cu).

The adhesive layer 117 adheres the upper substrate 119 and the lower substrate 110 . The adhesive layer 117 may include only a resin, or may include a resin and a moisture absorbent dispersed in the resin. The resin of the adhesive layer 117 is a base material of the adhesive layer 117 and may be made of a thermosetting resin or a photocurable resin. The resin may be made of, for example, a polymer material such as an epoxy-based material or an olefin-based material, but is not necessarily limited thereto.

The moisture adsorbent of the adhesive layer 117 may chemically react with moisture or oxygen flowing into the adhesive layer 117 to adsorb moisture or oxygen. The moisture adsorbent may be made of, for example, one kind or a mixture of two or more kinds of metal powder such as alumina, metal oxide, metal salt, or phosphorus pentoxide (P2O5). The metal oxide may be, for example, lithium oxide (Li2O), sodium oxide (Na2O), barium oxide (BaO), calcium oxide (CaO), or magnesium oxide (MgO). In addition, the metal salt is, for example, lithium sulfate (Li2SO4), sodium sulfate (Na2SO4), calcium sulfate (CaSO4), magnesium sulfate (MgSO4), cobalt sulfate (CoSO4), gallium sulfate (Ga2(SO4)3), titanium sulfate It may be a sulfate such as (Ti(SO4)2) or nickel sulfate (NiSO4). In addition, metal salts include calcium chloride (CaCl2), magnesium chloride (MgCl2), strontium chloride (SrCl2), yttrium chloride (YCl3), copper chloride (CuCl2), cesium fluoride (CsF), tantalum fluoride (TaF5), niobium fluoride ( NbF5), lithium bromide (LiBr), calcium bromide (CaBr2), cesium bromide (CeBr3), selenium bromide (SeBr4), vanadium bromide (VBr3), magnesium bromide (MgBr2), barium iodide (BaI2) or magnesium iodide (MgI2) and metal halides such as barium perchlorate (Ba(ClO4)2), magnesium perchlorate (Mg(ClO4)2), and the like. However, the moisture adsorbent is not limited to the above-described exemplary material.

The anti-arching layer 150 is an insulating layer for preventing an arcing phenomenon from occurring in the upper substrate 119 during an etching process for forming the passivation layer 140 . In other words, when a dry etching process is performed to form the passivation layer 140, the arcing prevention layer 150 may prevent arcing from occurring in the upper substrate 119 made of a metal material. . The anti-arching layer 150 is disposed to cover the upper surface of the upper substrate 119 . That is, the arcing prevention layer 150 is formed to be in contact with the upper surface of the upper substrate 119 .

The anti-arching layer 150 may be formed of a material having an etching selectivity that is less than or equal to an etching selectivity of the passivation layer 140 with respect to an etchant for etching the passivation layer 140 . That is, the etching selectivity of the anti-arching layer 150 to the etchant for etching the passivation layer 140 is smaller than the etching selectivity of the passivation layer 140 to the etchant for etching the passivation layer 140 , or can be the same For example, when the anti-arching layer 150 is formed of the same material as the passivation layer 140 , the etch selectivity of the anti-arching layer 150 to the etchant for etching the passivation layer 140 is the passivation layer 140 . ) may be equal to the etch selectivity of the passivation layer 140 to the etchant for etching. In addition, when the anti-arching layer 150 is formed of a material different from that of the passivation layer 140 , the anti-arching layer 150 is higher than the etching selectivity of the passivation layer 140 with respect to the etchant for etching the passivation layer 140 . It may be an insulating layer comprising a small material. For example, the anti-arching layer 150 may be formed of an inorganic material such as silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, or aluminum oxynitride. The anti-arching layer 150 may have a single-layer structure made of any one of the above-described materials, or a multi-layered structure in which layers made of any one of the above-described materials are stacked.

In some embodiments, the anti-arching layer 150 may be a layer in which a metal material constituting the upper substrate 119 is oxidized. That is, for example, when the upper substrate 119 is made of aluminum, the anti-arching layer 150 may be formed by oxidizing the upper portion of the upper substrate 119, and in this case, the anti-arching layer 150 is made of aluminum. It may be made of oxide.

In a conventional method of manufacturing an organic light emitting display device, a passivation layer is formed using a mask during a deposition process such as, for example, a CVD process. However, when a deposition process using a mask is performed, various problems as described above exist. Accordingly, a method of forming a material for the passivation layer on the entire surface of the lower substrate without using a separate mask and removing the material for the passivation layer covering the pad electrode in a state in which the upper substrate and the lower substrate are bonded may be used. In this case, an etching process may be performed to remove the material for the passivation layer. In a state in which the upper substrate and the lower substrate are bonded, it is difficult to use a wet etching process that may damage the organic light emitting device and the like. Therefore, a dry etching process must be used to remove the material for the passivation layer. However, when the upper substrate 119 is made of a metal material as in the organic light emitting diode display 100 according to an embodiment of the present invention, an arcing phenomenon may occur in the upper substrate 119 in the dry etching process. The upper substrate 119 and/or the organic light emitting device 160 may be burned, thereby reducing the manufacturing yield of the organic light emitting display device 100 . Accordingly, in the organic light emitting diode display 100 according to an embodiment of the present invention, the arcing prevention layer 150 is formed to cover the upper surface of the upper substrate 119 , and the upper substrate 119 is formed during the passivation layer 140 forming process. The arcing phenomenon can be prevented from occurring. That is, the dry etching process for forming the passivation layer 140 corresponds to an anisotropic etching process, and arcing is more likely to occur on the upper surface of the upper substrate 119 than on the side or lower surface of the upper substrate 119 . , in the organic light emitting diode display 100 according to an embodiment of the present invention, the arcing prevention layer 150 is formed to be in contact with the upper surface of the upper substrate 119 , so that the arcing phenomenon can be minimized. In addition, as the arcing phenomenon is prevented as described above, since a deposition process using a separate mask is unnecessary to form the passivation layer 140 , various problems that occurred when the passivation layer 140 is formed using a mask are eliminated. All can be solved.

Although not shown in FIG. 2 , in some embodiments, an end of the passivation layer 140 and an end of the upper substrate 119 may correspond to each other. That is, the passivation layer 140 is formed to completely overlap the upper substrate 119 , and may coincide with the boundary of the passivation layer 140 and the boundary of the upper substrate 119 on a plane. Accordingly, the passivation layer 140 may be formed of only the sealing part 141 without the inclined part 142 as shown in FIG. 2 .

3 is a schematic cross-sectional view illustrating an organic light emitting diode display according to another exemplary embodiment. The organic light emitting diode display 300 shown in FIG. 3 may differ from the organic light emitting display device 100 shown in FIGS. 1 and 2 only in the shapes and positions of the anti-arching layer 350 and the passivation layer 340 . However, since the other components are substantially the same, a redundant description will be omitted.

Referring to FIG. 3 , the arcing prevention layer 350 is disposed to cover the upper surface and the side surface of the upper substrate 119 . In other words, the anti-arching layer 350 may be formed to contact the upper surface and the side surface of the upper substrate 119 . For example, when the upper substrate 119 has a rectangular parallelepiped shape, the arcing prevention layer 350 may cover one or more of the four side surfaces of the upper substrate 119 .

Referring to FIG. 3 , the passivation layer 340 includes a sealing portion 341 and an inclined portion 342 extending from one side of the sealing portion 341 . The sealing part 341 is a portion overlapping the upper substrate 119 and the arcing prevention layer 350 , and the inclined portion 342 is a portion of the passivation layer 340 extending from one side of the sealing part 341 . In this case, the boundary between the sealing part 341 and the inclined part 342 may correspond to the end of the arc prevention layer 350 or the end of the upper substrate 119 as shown in FIG. 3 .

In the organic light emitting diode display 300 according to another embodiment of the present invention, the arcing prevention layer 350 is disposed to cover not only the upper surface of the upper substrate 119 but also the side surfaces of the upper substrate 119 . As described above, the dry etching process for forming the passivation layer 340 corresponds to an anisotropic etching process, and thus arcing is most likely to occur on the upper surface of the upper substrate 119 , but arcing also from the side of the upper substrate 119 . phenomena may occur. Accordingly, in the organic light emitting diode display 300 according to another embodiment of the present invention, the arcing prevention layer 350 is disposed to cover the upper surface and the lower surface of the upper substrate 119, so that during the passivation layer 340 forming process, the upper substrate ( 119) can be prevented from occurring in the arcing phenomenon.

4 is a schematic cross-sectional view illustrating an organic light emitting diode display according to another exemplary embodiment. Since the organic light emitting diode display 400 shown in FIG. 4 is different from the organic light emitting display device 300 shown in FIG. 3 only in the shape and position of the arcing prevention layer 450, other components are substantially the same. A duplicate description is omitted.

Referring to FIG. 4 , the anti-arching layer 450 is disposed to seal the upper substrate 119 . In other words, the arcing prevention layer 450 may cover the upper surface, lower surface, and side surfaces of the upper substrate 119 , and may be formed to be in contact with the upper surface, lower surface, and side surfaces of the upper substrate 119 .

In the organic light emitting diode display 400 according to another embodiment of the present invention, the arcing prevention layer 450 is disposed to completely seal the upper substrate 119 . As described above, the dry etching process for forming the passivation layer 340 corresponds to an anisotropic etching process, so that the arcing phenomenon is most likely to occur on the upper surface of the upper substrate 119 , but the side and lower surfaces of the upper substrate 119 . Also, arcing may occur due to plasma used during dry etching. Accordingly, in the organic light emitting diode display 400 according to another embodiment of the present invention, the arcing prevention layer 450 is disposed to cover all of the upper surface, the lower surface, and the side surface of the upper substrate 119 , so that the upper surface during the passivation layer 340 formation process is performed. An arcing phenomenon may be prevented from occurring in the substrate 119 .

5 is a flowchart illustrating a method of manufacturing an organic light emitting diode display according to an exemplary embodiment. 6A to 6D are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to an exemplary embodiment. 6A to 6D are process cross-sectional views illustrating a method of manufacturing the organic light emitting diode display 100 illustrated in FIGS. 1 and 2 , and redundant descriptions of components described with reference to FIGS. 1 and 2 are omitted. do.

First, a lower substrate 110 having a display area DA, a non-display area NA, and a pad area PA extending from one side of the non-display area NA is provided ( S50 ), and the display area DA ), the thin film transistor 120 and the pad electrode 130 are formed in the pad area PA (S51), the organic light emitting device 160 is formed on the thin film transistor 120 (S52), and the organic light emitting device ( 160 ) and the pad electrode 130 , a passivation layer material 649 is disposed in the display area DA, the non-display area NA, and the pad area PA ( S53 ).

Referring to FIG. 6A , the thin film transistor 120 is formed in the display area DA of the lower substrate 110 , and the pad electrode 130 is formed in the pad area PA of the lower substrate 110 . The pad electrode 130 is simultaneously formed when the thin film transistor 120 is formed. For example, as shown in FIG. 6A , when the pad electrode 130 is made of the same material as the source electrode 123 and the drain electrode 124 of the thin film transistor 120 , the pad electrode 130 is the thin film transistor 120 . When the source electrode 123 and the drain electrode 124 of 120 are formed, they may be formed at the same time.

Subsequently, a lower passivation layer 114 is formed on the thin film transistor 120 and the pad electrode 130 . The lower passivation layer 114 is formed to cover the edge of the pad electrode 130 to expose a portion of the upper surface of the pad electrode 130 . Subsequently, a planarization layer 115 is formed on the lower passivation layer 114 , and an organic light emitting device 160 is formed on the planarization layer 115 .

Next, a material 649 for a passivation layer is disposed to cover the organic light emitting diode 160 and the pad electrode 130 . Specifically, the passivation layer material 649 is deposited on the entire surface of the lower substrate 110 without using a mask, so that the display area DA, the non-display area NA, and the pad area PA of the lower substrate 110 are deposited. ) can be placed in The material 649 for the passivation layer is an inorganic material, and may be, for example, silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, aluminum oxynitride, or the like.

Next, a material 659 for an anti-arching layer is disposed to cover the upper surface of the upper substrate 119 (S54).

Referring to FIG. 6B , an insulating material 659 for an anti-arching layer is disposed on the upper surface of the upper substrate 119 made of a metal material. The anti-arching layer material 659 may be disposed on the upper surface of the upper substrate 119 using any one of sputtering, atomic layer deposition (ALD), and chemical vapor deposition (CVD). When the material for the anti-arching layer 659 is the same as the material for the passivation layer 649, the thickness D2 of the material for the anti-arching layer 659 as shown in FIG. 6B is the material for the passivation layer disposed in the pad area PA (PA). 649) may be thicker than the thickness D1.

In some embodiments, when the material for the anti-arching layer 659 and the material for the passivation layer 649 are different, the etch selectivity of the material for the anti-arching layer 659 to the etchant for etching the material for the passivation layer 649 is the passivation It may be less than or equal to the etch selectivity of the material for the passivation layer 649 to the etchant for etching the material for the layer 649 .

In some embodiments, the anti-arching layer material 659 may be disposed to cover the upper surface and side surfaces of the upper substrate 119 , or may be formed to seal the upper substrate 119 .

In some embodiments, the anti-arching layer material 659 may be formed by oxidizing the upper portion of the upper substrate 119 . For example, when the upper substrate 119 is made of aluminum, the anti-arching layer material 659 may be disposed on the upper substrate 119 by oxidizing the upper portion of the upper substrate 119 . In this case, the anti-arching layer 150 may be made of aluminum oxide.

Next, the upper substrate 119 and the lower substrate 110 corresponding to the display area DA and the non-display area NA are bonded to each other using the adhesive layer 117 ( S55 ).

Referring to FIG. 6B , an adhesive layer 117 is disposed on the lower surface of the upper substrate 119 . The adhesive layer 117 is moved with a protective film disposed on the top and bottom surfaces of the adhesive layer 117 , and the protective film disposed on any one of the top and bottom surfaces of the adhesive layer 117 is removed and laminated on the upper substrate 119 . In this way, the adhesive layer 117 may be disposed on the lower surface of the upper substrate 119 .

Referring to FIG. 6C , the upper substrate 119 and the lower substrate 110 corresponding to the display area DA and the non-display area NA are bonded to each other using the adhesive layer 117 . The upper substrate 119 and the lower substrate 110 are fixed to each other by the adhesive layer 117 , and the adhesive layer 117 may seal the organic light emitting diode 160 .

Next, the material 649 for the passivation layer disposed in the pad area PA is etched to expose the pad electrode 130 ( S56 ).

6C and 6D , the material 649 for the passivation layer may be dry etched to expose the pad electrode 130 . As shown in FIG. 6C , dry etching was performed while the passivation layer material 649 covered the pad electrode 130 , and as shown in FIG. 6D , it was disposed in an area not covered by the upper substrate 119 . The material 649 for the passivation layer may be removed and the passivation layer 140 may be formed.

As described above, when the material for the passivation layer 649 and the material for the anti-arching layer 659 are the same, in the process of dry etching the material for the passivation layer 649, the thickness (D2) of the material for the anti-arching layer 659 decreases and An anti-arching layer 150 is formed. Specifically, since the material for the passivation layer 649 and the material for the anti-arching layer 659 are the same, the thickness D2 of the material 659 for the anti-arching layer is equal to the thickness D1 of the material 649 for the passivation layer removed in the dry etching process. ) is also reduced. Accordingly, as the dry etching process is performed, the thickness D2 of the material for the anti-arching layer 659 is reduced, and when the dry etching process is completed, the thickness D2 of the material for the anti-arching layer 659 and the material for the passivation layer 649 An arcing prevention layer 150 having a thickness D3 corresponding to a difference between the thicknesses D1 of .

In the method of manufacturing an organic light emitting display device according to an embodiment of the present invention, after the passivation layer material 649 is formed on the entire surface of the lower substrate 110 , the upper substrate 119 and the lower substrate 110 are bonded together. The passivation layer 140 exposing the pad electrode 130 is formed by removing the passivation layer material 649 corresponding to the pad area PA. Accordingly, in the method for manufacturing an organic light emitting display device according to an embodiment of the present invention, a deposition process using a separate mask is unnecessary to form the passivation layer 140 , and thus the passivation layer 140 is formed using a mask. All of the various problems that have occurred as a result can be solved. In addition, in the method of manufacturing an organic light emitting diode display according to an embodiment of the present invention, the anti-arching layer 150 is used to prevent arcing from occurring in the upper substrate 119 in the dry etching process for removing the passivation layer material 649 . ), it is possible to prevent arcing from occurring in the upper substrate 119 during the passivation layer 140 formation process.

Although the embodiments of the present invention have been described in more detail with reference to the accompanying drawings, the present invention is not necessarily limited to these embodiments, and various modifications may be made within the scope without departing from the technical spirit of the present invention. . Accordingly, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but to explain, and the scope of the technical spirit of the present invention is not limited by these embodiments. The protection scope of the present invention should be construed by the following claims, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of the present invention.

110: lower substrate
111: buffer layer
112: gate insulating layer
113: interlayer insulating layer
114: lower passivation layer
115: planarization layer
116: bank layer
117: adhesive layer
119: upper substrate
120: thin film transistor
121: gate electrode
122: active layer
123: source electrode
124: drain electrode
130: pad electrode
140, 340: passivation layer
141, 341: sealing part
142, 342: inclined portion
649: material for passivation layer
150, 350, 450: anti-arc layer
659: material for anti-arc layer
160: organic light emitting device
161: anode
162: organic light emitting layer
163: cathode
100, 300, 400: organic light emitting display device
DA: display area
PA: pad area

Claims (18)

a lower substrate having a display area, a non-display area, and a pad area extending from one side of the non-display area;
a thin film transistor and an organic light emitting device disposed in the display area;
a pad electrode disposed in the pad area;
a passivation layer covering the organic light emitting device and exposing the pad electrode;
an upper substrate facing the display area and the non-display area of the lower substrate;
an adhesive layer bonding the upper substrate and the lower substrate; and
and an arcing prevention layer covering all of the upper surface, the side surface, and the lower surface of the upper substrate to seal the upper substrate. According to claim 1,
and the upper substrate is made of a metal material. 3. The method of claim 2,
and the anti-arching layer is a layer in which the metal material constituting the upper substrate is oxidized. delete delete According to claim 1,
An etch selectivity ratio of the anti-arching layer to an etchant for etching the passivation layer is less than or equal to an etch selectivity ratio of the passivation layer to an etchant for etching the passivation layer. . According to claim 1,
The arcing prevention layer is a single layer or a double layer made of any one of silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, and aluminum oxynitride. An organic light emitting display device, characterized in that it has a structure. According to claim 1,
and an end of the passivation layer and an end of the upper substrate correspond to each other. According to claim 1,
The passivation layer includes a sealing portion and an inclined portion extending from one side of the sealing portion,
and a boundary between the sealing part and the inclined part corresponds to an end of the upper substrate. providing a lower substrate having a display area, a non-display area, and a pad area extending from one side of the non-display area;
forming a thin film transistor in the display area and a pad electrode in the pad area;
forming an organic light emitting device on the thin film transistor;
disposing a material for a passivation layer in the display area, the non-display area, and the pad area to cover the organic light emitting diode and the pad electrode;
disposing a material for an anti-arching layer to cover all of the upper surface, the side surface, and the lower surface of the upper substrate to seal the upper substrate;
bonding the upper substrate and the lower substrate corresponding to the display area and the non-display area using an adhesive layer;
and etching the material for the passivation layer disposed in the pad region to expose the pad electrode. 11. The method of claim 10,
The method of claim 1 , wherein the upper substrate is made of a metal material. delete delete 11. The method of claim 10,
When the material for the anti-arching layer and the material for the passivation layer are the same, the thickness of the material for the anti-arching layer is greater than a thickness of the material for the passivation layer disposed in the pad area. 11. The method of claim 10,
When the material for the anti-arching layer and the material for the passivation layer are different, the etch selectivity of the material for the anti-arching layer to the etchant for etching the material for the passivation layer is the passivation to the etchant for etching the material for the passivation layer. A method of manufacturing an organic light emitting display device, characterized in that it is less than or equal to the etching selectivity of the layer material. 11. The method of claim 10,
The method of claim 1 , wherein the etching includes dry etching the material for the passivation layer. 11. The method of claim 10,
The step of disposing the material for the anti-arching layer comprises forming the anti-arching layer using any one of sputtering, atomic layer deposition (ALD) and chemical vapor deposition (CVD). , a method for manufacturing an organic light emitting display device. 11. The method of claim 10,
The method of claim 1 , wherein disposing the material for the anti-arching layer includes forming the material for the anti-arching layer by oxidizing an upper portion of the upper substrate.

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