KR102270039B1 - 반도체 디바이스 테스트 장치 및 반도체 디바이스 테스트 방법 - Google Patents

반도체 디바이스 테스트 장치 및 반도체 디바이스 테스트 방법 Download PDF

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KR102270039B1
KR102270039B1 KR1020140165434A KR20140165434A KR102270039B1 KR 102270039 B1 KR102270039 B1 KR 102270039B1 KR 1020140165434 A KR1020140165434 A KR 1020140165434A KR 20140165434 A KR20140165434 A KR 20140165434A KR 102270039 B1 KR102270039 B1 KR 102270039B1
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signal
semiconductor device
correction value
harmonic
frequency
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KR20150062974A (ko
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아키히로 오타카
미츠노리 니시자와
노부유키 히라이
도모노리 나카무라
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하마마츠 포토닉스 가부시키가이샤
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302Contactless testing
    • G01R31/308Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Tests Of Electronic Circuits (AREA)
KR1020140165434A 2013-11-29 2014-11-25 반도체 디바이스 테스트 장치 및 반도체 디바이스 테스트 방법 Active KR102270039B1 (ko)

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Application Number Priority Date Filing Date Title
JP2013247143A JP6283507B2 (ja) 2013-11-29 2013-11-29 半導体デバイス計測装置及び半導体デバイス計測方法
JPJP-P-2013-247143 2013-11-29

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KR20150062974A KR20150062974A (ko) 2015-06-08
KR102270039B1 true KR102270039B1 (ko) 2021-06-25

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Families Citing this family (6)

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Publication number Priority date Publication date Assignee Title
KR101923846B1 (ko) 2013-02-01 2018-11-29 하마마츠 포토닉스 가부시키가이샤 반도체 디바이스 검사 장치 및 반도체 디바이스 검사 방법
JP6283507B2 (ja) * 2013-11-29 2018-02-21 浜松ホトニクス株式会社 半導体デバイス計測装置及び半導体デバイス計測方法
US10432434B2 (en) * 2016-07-20 2019-10-01 Tektronix, Inc. Multi-band noise reduction systems and methods
US11079432B2 (en) * 2019-02-19 2021-08-03 Nxp B.V. Integrated laser voltage probe pad for measuring DC or low frequency AC electrical parameters with laser based optical probing techniques
US12105858B2 (en) * 2020-03-11 2024-10-01 University Of Florida Research Foundation, Incorporated Systems and methods for laser probing for hardware trojan detection
EP4213189B1 (en) * 2020-09-23 2026-03-04 Hamamatsu Photonics K.K. Inspection device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120307249A1 (en) 2011-05-31 2012-12-06 Hamamatsu Photonics K.K. Apparatus for inspecting integrated circuit
US20150153408A1 (en) 2013-11-29 2015-06-04 Hamamatsu Photonics K.K. Apparatus for testing a semiconductor device and method of testing a semiconductor device

Family Cites Families (9)

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Publication number Priority date Publication date Assignee Title
JP2556910B2 (ja) * 1989-11-30 1996-11-27 浜松ホトニクス株式会社 光強度変化検出装置
EP0702236A3 (en) * 1994-09-19 1996-06-05 Hamamatsu Photonics Kk Voltage measuring system
JP3352244B2 (ja) * 1994-09-19 2002-12-03 浜松ホトニクス株式会社 電圧測定装置
US7450245B2 (en) 2005-06-29 2008-11-11 Dcg Systems, Inc. Method and apparatus for measuring high-bandwidth electrical signals using modulation in an optical probing system
US7733100B2 (en) 2005-08-26 2010-06-08 Dcg Systems, Inc. System and method for modulation mapping
KR101210497B1 (ko) 2005-12-19 2012-12-10 인하대학교 산학협력단 자기변형 현상을 이용한 초소형 이동체
JP4951378B2 (ja) * 2007-03-20 2012-06-13 株式会社アドバンテスト 波形発生器および試験装置
SG10201401887YA (en) 2009-05-01 2014-06-27 Dcg Systems Inc Systems and method for laser voltage imaging state mapping
JP6166032B2 (ja) 2012-11-06 2017-07-19 浜松ホトニクス株式会社 半導体デバイス検査装置及び半導体デバイス検査方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120307249A1 (en) 2011-05-31 2012-12-06 Hamamatsu Photonics K.K. Apparatus for inspecting integrated circuit
US20150153408A1 (en) 2013-11-29 2015-06-04 Hamamatsu Photonics K.K. Apparatus for testing a semiconductor device and method of testing a semiconductor device

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Publication number Publication date
US20150153408A1 (en) 2015-06-04
JP6283507B2 (ja) 2018-02-21
KR20150062974A (ko) 2015-06-08
US9618576B2 (en) 2017-04-11
JP2015105851A (ja) 2015-06-08

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