KR102264295B1 - Apparatus and Method for treating substrate - Google Patents

Abstract

SUMMARY OF THE INVENTION An embodiment of the present invention provides an apparatus for processing a substrate. The substrate processing apparatus includes: a process chamber having a processing space therein, and processing a substrate in the processing space; and an exhaust unit for exhausting the processing space, the exhaust unit comprising: a pipe; And a vibration applying member for applying vibration to the pipe; may include The substrate processing apparatus further includes a controller for controlling the vibration of the vibration applying member, wherein the controller applies periodic vibration to the pipe when the internal pressure of the pipe is in a preset range, and the internal pressure of the pipe is set in a preset range. When out of the range, the vibration applying member may control the vibration applying member so that the vibration applying member continuously applies the vibration to the pipe until the internal pressure of the pipe enters within a preset range.
According to the present invention, the exhaust pressure can be adjusted within a preset range by applying vibration to the pipe to remove fumes deposited inside the pipe.

Description

Apparatus and Method for treating substrate

The present invention relates to an apparatus and method for processing a substrate.

In order to manufacture a semiconductor device, various processes such as cleaning, deposition, photography, etching, and ion implantation are performed. Among these processes, it is performed in a chamber having a processing space therein.

In general, the processing space of the chamber must maintain a constant process atmosphere. Due to this, the process atmosphere is exhausted by the exhaust device to maintain a preset pressure. The exhaust device not only maintains the process atmosphere at a constant pressure, but also exhausts process by-products generated during substrate processing.

For example, in a process of liquid-treating a substrate with a processing liquid or a process of baking a substrate, process by-products such as fume are generated, which are exhausted by an exhaust device.

The exhaust device includes individual ducts connected to a liquid processing chamber for liquid processing a substrate or a baking chamber for heat processing a substrate, and a main duct connected from each individual duct. The individual ducts connect the chamber and the main duct, and the main duct is depressurized by a pressure reducing member. Process by-products generated in the chamber are exhausted sequentially through individual ducts and main ducts.

At this time, as fumes generated during the liquid treatment process or the baking process accumulate on the inner wall of the duct, it acts as a factor for changing the exhaust pressure in the chamber. According to the experimental data, the exhaust pressure in the chamber has a great effect on the removal rate of process by-products in the chamber and the processing rate for each area of the substrate.

When the exhaust pressure in the chamber is increased, the removal rate of process by-products increases, while the throughput for each area of the substrate becomes non-uniform. On the other hand, when the exhaust pressure in the chamber is lowered, the processing amount for each region of the substrate becomes uniform, while the removal rate of process by-products decreases, and the processing speed of the substrate becomes slow.

An object of the present invention is to provide an apparatus and method capable of regulating an exhaust pressure in a chamber within a preset range.

Another object of the present invention is to provide an apparatus and method capable of increasing the removal rate of process by-products by adjusting the exhaust pressure in the chamber and uniformly controlling the throughput for each area of the substrate.

The present invention provides an apparatus for processing a substrate. In one embodiment, an apparatus for processing a substrate includes: a process chamber having a processing space therein, and processing a substrate in the processing space; and an exhaust unit for exhausting the processing space, the exhaust unit comprising: a pipe; And a vibration applying member for applying vibration to the pipe; may include

In one embodiment, further comprising a controller for controlling the vibration of the vibration applying member,

The controller may control the vibration applying member so that the vibration applying member applies periodic vibration to the pipe when the internal pressure of the pipe is within a preset range.

In one embodiment, when the internal pressure of the pipe is out of a preset range, the controller may control the vibration applying member so that the vibration applying member continuously applies vibration to the pipe until the internal pressure of the pipe enters within the preset range. have.

In one embodiment, the vibration applying member may be installed on the outer wall of the pipe.

In one embodiment, the vibration applying member may include a motor.

In an embodiment, the vibration applying member may include an ultrasonic applicator.

In one embodiment, a plurality of process chambers are provided, and the pipe includes: an individual pipe connected to each process chamber; It includes a main pipe to which a plurality of individual pipes are connected, and the vibration applying member may be installed in the main pipe.

In an embodiment, the vibration applying member may be provided between points to which a plurality of individual pipes are connected, respectively.

The invention also provides a method of processing a substrate. In one embodiment, the method of processing the substrate may process the substrate provided in the processing space in the process chamber, exhaust the processing space through the pipe, and apply vibration to the pipe to drop the fumes deposited in the pipe from the pipe. .

In an embodiment, the internal pressure of the pipe may be measured, and when the internal pressure of the pipe is within a preset range, periodic vibration may be applied to the pipe.

In an embodiment, the internal pressure of the pipe may be measured, and when the internal pressure of the pipe is out of a preset range, continuous vibration may be applied to the pipe until the internal pressure of the pipe enters the preset range.

According to an embodiment of the present invention, the exhaust pressure can be adjusted within a preset range by applying vibration to the pipe to remove fumes deposited inside the pipe.

In addition, according to the embodiment of the present invention, it is possible to remove the fumes deposited inside the pipe to facilitate maintenance of the pipe and to prevent contamination of the process line.

1 is a perspective view schematically showing a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view of the substrate processing apparatus showing the application block or the developing block of FIG. 1 .
3 is a plan view of the substrate processing apparatus of FIG. 1 .
4 is a plan view schematically illustrating an example of the heat treatment chamber of FIG. 3 .
FIG. 5 is a view showing an example of a hand of the transport robot of FIG. 3 .
6 is a front view of the heat treatment chamber of FIG. 5 .
FIG. 7 is a cross-sectional view showing the heating unit of FIG. 6 .
8 is a cross-sectional view showing an exhaust unit of the present invention.
9 is a perspective view showing a cross-sectional view of the exhaust unit of the present invention connected to the heat treatment chamber of FIG.
10 is a view showing an exhaust unit of the present invention.
11 is a graph illustrating a pressure change with time inside a pipe.

Hereinafter, an embodiment of the present invention will be described in more detail with reference to the accompanying drawings. Embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more completely explain the present invention to those of ordinary skill in the art. Accordingly, the shapes of elements in the drawings are exaggerated to emphasize a clearer description.

1 is a perspective view schematically showing a substrate processing apparatus according to an embodiment of the present invention, FIG. 2 is a cross-sectional view of the substrate processing apparatus showing the application block or the developing block of FIG. 1 , and FIG. 3 is the substrate processing apparatus of FIG. 1 is a plan view of

1 to 3 , the substrate processing apparatus 1 includes an index module 20 , a processing module 30 , and an interface module 40 . According to an embodiment, the index module 20 , the processing module 30 , and the interface module 40 are sequentially arranged in a line. Hereinafter, a direction in which the index module 20 , the processing module 30 , and the interface module 40 are arranged is referred to as a first direction 12 , and a direction perpendicular to the first direction 12 when viewed from the top is referred to as A second direction 14 is referred to, and a direction perpendicular to both the first direction 12 and the second direction 14 is referred to as a third direction 16 .

The index module 20 transfers the substrate W from the container 10 in which the substrate W is accommodated to the processing module 30 , and accommodates the processed substrate W in the container 10 . The longitudinal direction of the index module 20 is provided in the second direction 14 . The index module 20 has a load port 22 and an index frame 24 . With reference to the index frame 24 , the load port 22 is located on the opposite side of the processing module 30 . The container 10 in which the substrates W are accommodated is placed on the load port 22 . A plurality of load ports 22 may be provided, and the plurality of load ports 22 may be disposed along the second direction 14 .

As the container 10, a closed container 10 such as a Front Open Unified Pod (FOUP) may be used. Vessel 10 may be placed in loadport 22 by an operator or by a transfer means (not shown) such as an Overhead Transfer, Overhead Conveyor, or Automatic GuidedVehicle. have.

An index robot 2200 is provided inside the index frame 24 . A guide rail 2300 having a longitudinal direction in the second direction 14 is provided in the index frame 24 , and the index robot 2200 may be provided to be movable on the guide rail 2300 . The index robot 2200 includes a hand 2220 on which the substrate W is placed, and the hand 2220 moves forward and backward, rotates about the third direction 16 , and moves in the third direction 16 . It may be provided to be movable along with it.

The processing module 30 performs a coating process and a developing process on the substrate W. The processing module 30 has an application block 30a and a developing block 30b. The application block 30a performs a coating process on the substrate W, and the developing block 30b performs a development process on the substrate W. A plurality of application blocks 30a are provided, and they are provided to be stacked on each other. A plurality of developing blocks 30b are provided, and the developing blocks 30b are provided to be stacked on each other. According to the embodiment of Fig. 1, two application blocks 30a are provided, and two development blocks 30b are provided. The application blocks 30a may be disposed below the developing blocks 30b. According to an example, the two application blocks 30a may perform the same process as each other, and may be provided in the same structure. Also, the two developing blocks 30b may perform the same process as each other, and may be provided in the same structure.

Referring to FIG. 3 , the application block 30a includes a heat treatment chamber 3200 , a transfer chamber 3400 , a liquid processing chamber 3600 , and a buffer chamber 3800 . The heat treatment chamber 3200 performs a heat treatment process on the substrate W. The heat treatment process may include a cooling process and a heating process. The liquid processing chamber 3600 supplies a liquid on the substrate W to form a liquid film. The liquid film may be a photoresist film or an antireflection film. The transfer chamber 3400 transfers the substrate W between the heat treatment chamber 3200 and the liquid treatment chamber 3600 in the application block 30a.

The transfer chamber 3400 is provided so that its longitudinal direction is parallel to the first direction 12 . The transfer chamber 3400 is provided with a transfer robot 3422 . The transfer robot 3422 transfers a substrate between the heat treatment chamber 3200 , the liquid processing chamber 3600 , and the buffer chamber 3800 . According to an example, the transfer robot 3422 has a hand 3420 on which the substrate W is placed, and the hand 3420 moves forward and backward, rotates about the third direction 16 , and the third direction. It may be provided movably along (16). A guide rail 3300 having a longitudinal direction parallel to the first direction 12 is provided in the transfer chamber 3400 , and the transfer robot 3422 may be provided movably on the guide rail 3300 . .

A plurality of liquid processing chambers 3600 are provided. Some of the liquid processing chambers 3600 may be provided to be stacked on each other. The liquid processing chambers 3600 are disposed on one side of the transfer chamber 3402 . The liquid processing chambers 3600 are arranged side by side along the first direction 12 . Some of the liquid processing chambers 3600 are provided adjacent to the index module 20 . Hereinafter, these liquid treatment chambers will be referred to as a front liquid treating chamber 3602 (front liquid treating chamber). Other portions of the liquid processing chambers 3600 are provided adjacent to the interface module 40 . Hereinafter, these liquid treatment chambers are referred to as rear heat treating chambers 3604 (rear heat treating chambers).

The front stage liquid processing chamber 3602 applies the first liquid on the substrate W, and the rear stage liquid processing chamber 3604 applies the second liquid on the substrate W. The first liquid and the second liquid may be different types of liquid. According to one embodiment, the first liquid is an anti-reflection film, and the second liquid is a photoresist. The photoresist may be applied on the substrate W on which the anti-reflection film is applied. Optionally, the first liquid may be a photoresist, and the second liquid may be an anti-reflection film. In this case, the anti-reflection film may be applied on the photoresist-coated substrate (W). Optionally, the first liquid and the second liquid are the same type of liquid, and they may both be photoresist.

FIG. 4 is a diagram schematically illustrating an example of the liquid processing chamber of FIG. 3 . Referring to FIG. 4 , each substrate processing unit 3602 performs an application process of applying a processing liquid such as a photoresist on a substrate. The substrate processing units may be sequentially arranged along the first direction 12 . For example, three substrate processing units may be positioned within the housing 3610 . Each substrate processing unit includes a substrate support unit 3640 , a processing vessel 3620 , and a liquid supply unit 3660 .

The substrate support unit 3640 supports the substrate W in the inner space of the housing 3610 . The substrate support unit 3640 rotates the substrate W. The substrate support unit 3640 includes a spin chuck 3642 , a rotation shaft 3644 , and a driver 3646 . The spin chuck 3642 serves as a substrate support member 3642 supporting a substrate. The spin chuck 3642 is provided to have a circular plate shape. The substrate W is in contact with the upper surface of the spin chuck 3642 .

The rotation shaft 3644 and the driver 3646 are provided as rotation drive members 3644 and 3646 for rotating the spin chuck 3642 . The rotation shaft 3644 supports the spin chuck 3642 under the spin chuck 3642 . The rotation shaft 3644 is provided so that the longitudinal direction thereof faces the vertical direction. The rotating shaft 3644 is provided to be rotatable about its central axis. The actuator 3646 provides a driving force to rotate the rotation shaft 3644 .

The processing vessel 3620 is located in the interior space 812 of the housing 3610 . The processing container 3620 is provided to have a cup shape with an open top. The processing vessel 3620 provides a processing space therein. The processing vessel 3620 is provided to surround the periphery of the substrate support unit 3640 . That is, the substrate support unit 3640 is located in the processing space. The processing vessel 3620 includes an outer cup 3622 and an inner cup 3624 . The outer cup 3622 is provided to surround the circumference of the substrate support unit 3640 , and the inner cup 3624 is located inside the outer cup 3622 . Each of the outer cup 3622 and the inner cup 3624 is provided in an annular ring shape. The space between the outer cup 3622 and the inner cup 3624 functions as a recovery path through which the liquid is recovered.

The inner cup 3624 is provided in a circular plate shape surrounding the rotation shaft 3644 . When viewed from above, the inner cup 3624 is positioned to overlap the exhaust port 3680 . The inner cup has an inner portion and an outer portion. The upper surfaces of the inner and outer portions are provided to be inclined at different angles from each other. When viewed from the top, the inner portion is positioned to overlap the spin chuck. The inner portion is positioned to face the rotation shaft 3646 . The inner portion faces an upwardly inclined direction as it goes away from the rotation shaft 3646 , and the outer portion extends outwardly from the inner portion. The outer portion faces a downwardly inclined direction as it goes away from the rotation shaft 3646 . The upper end of the inner portion may coincide with the side end of the substrate W in the vertical direction. According to an example, the point where the outer part and the inner part meet may be a position lower than the upper end of the inner part. A point where the inner part and the outer part meet each other may be provided to be rounded. The outer portion may be combined with the outer cup 3622 to form a recovery path through which the treatment liquid is recovered.

The outer cup 3622 is provided to have a cup shape surrounding the substrate support unit 3640 and the inner cup 3624 . The outer cup 3622 has a bottom portion 3625 , a side portion 3623 , and an inclined portion 3621 . The bottom part 3625 is provided to have a circular plate shape having a hollow. A recovery line 3690 is connected to the bottom portion 3625 . The recovery line 3690 recovers the processing liquid supplied on the substrate W. The treatment liquid recovered by the recovery line 3690 may be reused by an external liquid recovery system. The side portion 3623 is provided to have an annular ring shape surrounding the substrate support unit 3640 . The side portion 3623 extends in a direction perpendicular to the side end of the bottom portion 3625 . A side portion 3623 extends upwardly from the bottom portion 3625 .

The inclined portion 3621 extends from the upper end of the side portion 3623 in a direction toward the central axis of the outer cup 3622 . The inner surface of the inclined portion 3621 is provided to be inclined upward to approach the substrate support unit 3640 . The inclined portion 3621 is provided to have a ring shape. During the liquid treatment process of the substrate, the upper end of the inclined portion 3621 is positioned higher than the substrate W supported by the substrate support unit 3640 .

The liquid supply unit 3660 supplies a processing liquid and a pre-wet liquid on the substrate W. The liquid supply unit 3660 includes an arm 3662 , a free wet nozzle 3666 , and a treatment nozzle 3664 . A free wet nozzle 3666 and a processing nozzle 3664 are respectively provided on the bottom surface of the arm 3662 . Optionally, a plurality of arms 3662 may be provided, and a free wet nozzle 3666 and a processing nozzle 3664 may be installed in each of the arms 3662 . In addition, the arm 3662 may be rotated by being coupled to a rotation shaft whose longitudinal direction faces the third direction.

The pre-wet nozzle 3666 supplies the pre-wet liquid onto the substrate W, and the processing nozzle 3664 supplies the processing liquid onto the substrate W. For example, the pre-wet liquid may be a liquid capable of changing the surface properties of the substrate W. The pre-wet liquid may change the surface of the substrate W into a hydrophobic property. The pre-wet liquid may be a thinner, and the treatment liquid may be a photosensitive liquid such as a photoresist.

Referring back to FIG. 3 , a plurality of buffer chambers 3800 are provided. Some of the buffer chambers 3800 are disposed between the index module 20 and the transfer chamber 3400 . Hereinafter, these buffer chambers are referred to as a front buffer 3802 (front buffer). The front end buffers 3802 are provided in plurality, and are positioned to be stacked on each other in the vertical direction. Another portion of the buffer chambers 3802 and 3804 is disposed between the transfer chamber 3400 and the interface module 40 below. These buffer chambers are referred to as rear buffer 3804 (rear buffer). The rear end buffers 3804 are provided in plurality, and are positioned to be stacked on each other in the vertical direction. Each of the front-end buffers 3802 and the back-end buffers 3804 temporarily stores a plurality of substrates W. As shown in FIG. The substrate W stored in the shear buffer 3802 is loaded or unloaded by the index robot 2200 and the transfer robot 3422 . The substrate W stored in the downstream buffer 3804 is carried in or carried out by the transfer robot 3422 and the first robot 4602 .

The developing block 30b has a heat treatment chamber 3200 , a transfer chamber 3400 , and a liquid treatment chamber 3600 . The heat treatment chamber 3200 , the transfer chamber 3400 , and the liquid treatment chamber 3600 of the developing block 30b are the heat treatment chamber 3200 , the transfer chamber 3400 , and the liquid treatment chamber 3600 of the application block 30a . ) in a structure and arrangement substantially similar to those of However, in the developing block 30b, all of the liquid processing chambers 3600 are provided as the developing chamber 3600 for processing the substrate by supplying a developer in the same manner.

The interface module 40 connects the processing module 30 to the external exposure apparatus 50 . The interface module 40 includes an interface frame 4100 , an additional process chamber 4200 , an interface buffer 4400 , and a transfer member 4600 .

The additional process chamber 4200 , the interface buffer 4400 , and the transfer member 4600 are disposed inside the interface frame 4100 . The additional process chamber 4200 may perform a predetermined additional process before the substrate W, which has been processed in the application block 30a, is loaded into the exposure apparatus 50 . Optionally, the additional process chamber 4200 may perform a predetermined additional process before the substrate W, which has been processed in the exposure apparatus 50 , is loaded into the developing block 30b. According to an example, the additional process is an edge exposure process of exposing an edge region of the substrate W, a top surface cleaning process of cleaning the upper surface of the substrate W, or a lower surface cleaning process of cleaning the lower surface of the substrate W can A plurality of additional process chambers 4200 may be provided, and they may be provided to be stacked on each other. All of the additional process chambers 4200 may be provided to perform the same process. Optionally, some of the additional process chambers 4200 may be provided to perform different processes.

The interface buffer 4400 provides a space in which the substrate W transferred between the application block 30a, the additional process chamber 4200, the exposure apparatus 50, and the developing block 30b temporarily stays during the transfer. A plurality of interface buffers 4400 may be provided, and a plurality of interface buffers 4400 may be provided to be stacked on each other.

According to an example, the additional process chamber 4200 may be disposed on one side of the transfer chamber 3400 along the lengthwise extension line, and the interface buffer 4400 may be disposed on the other side thereof.

The transfer member 4600 transfers the substrate W between the coating block 30a, the addition process chamber 4200, the exposure apparatus 50, and the developing block 30b. The transfer member 4600 may be provided as one or a plurality of robots. According to an example, the conveying member 4600 has a first robot 4602 and a second robot 4606 . The first robot 4602 transfers the substrate W between the application block 30a, the additional process chamber 4200, and the interface buffer 4400, and the interface robot 4606 uses the interface buffer 4400 and the exposure apparatus ( 50), and the second robot 4604 may be provided to transfer the substrate W between the interface buffer 4400 and the developing block 30b.

The first robot 4602 and the second robot 4606 each include a hand on which the substrate W is placed, and the hand moves forward and backward, rotates about an axis parallel to the third direction 16, and It may be provided to be movable along three directions (16).

The hands of the index robot 2200 , the first robot 4602 , and the second robot 4606 may all have the same shape as the hands 3420 of the transfer robots 3422 and 3424 . Optionally, the hand of the robot directly exchanging the substrate W with the transfer plate 3240 of the heat treatment chamber is provided in the same shape as the hand 3420 of the transfer robots 3422 and 3424, and the hands of the remaining robots have a different shape. can be provided as

According to one embodiment, the index robot 2200 is provided to directly exchange the substrate W with the heating unit 3230 of the shear heat treatment chamber 3200 provided in the application block 30a.

In addition, the transfer robot 3422 provided in the application block 30a and the developing block 30b may be provided to directly transfer the substrate W with the transfer plate 3240 located in the heat treatment chamber 3200 .

FIG. 5 is a view showing an example of a hand of the transport robot of FIG. 3 . Referring to FIG. 5 , the hand 3420 has a base 3428 and a support protrusion 3429 . The base 3428 may have an annular ring shape in which a portion of the circumference is bent. The base 3428 has an inner diameter greater than the diameter of the substrate W. As shown in FIG. A support protrusion 3429 extends from the base 3428 inward thereof. A plurality of support protrusions 3429 are provided, and support an edge region of the substrate W. As shown in FIG. According to an example, four support protrusions 3429 may be provided at equal intervals.

A plurality of heat treatment chambers 3200 are provided. The heat treatment chambers 3200 are arranged in a row along the first direction 12 . The heat treatment chambers 3200 are located at one side of the transfer chamber 3400 .

6 is a plan view schematically illustrating an example of the heat treatment chamber of FIG. 3 , and FIG. 7 is a front view of the heat treatment chamber of FIG. 6 . 6 and 7 , the heat treatment chamber 3200 includes a housing 3210 , a cooling unit 3220 , a heating unit 3230 , and a conveying plate 3240 .

The housing 3210 is provided in the shape of a substantially rectangular parallelepiped. An inlet (not shown) through which the substrate W enters and exits is formed on the sidewall of the housing 3210 . The inlet may remain open. A door (not shown) may optionally be provided to open and close the inlet. A cooling unit 3220 , a heating unit 3230 , and a conveying plate 3240 are provided in the housing 3210 . The cooling unit 3220 and the heating unit 3230 are provided side by side along the second direction 14 . According to an example, the cooling unit 3220 may be located closer to the transfer chamber 3400 than the heating unit 3230 .

The cooling unit 3220 has a cooling plate 3222 . The cooling plate 3222 may have a generally circular shape when viewed from the top. The cooling plate 3222 is provided with a cooling member 3224 . According to an example, the cooling member 3224 is formed inside the cooling plate 3222 and may be provided as a flow path through which the cooling fluid flows.

The heating unit 3230 is provided as the apparatus 1000 for heating the substrate to a temperature higher than room temperature. The heating unit 3230 heats the substrate W in a reduced pressure atmosphere at or lower than normal pressure.

The transport plate 3240 is provided in a substantially circular plate shape and has a diameter corresponding to that of the substrate W. As shown in FIG. A notch 3244 is formed at an edge of the conveying plate 3240 . The notch 3244 may have a shape corresponding to the protrusion 3429 formed on the hand 3420 of the transfer robots 3422 and 3424 described above. In addition, the notch 3244 is provided in a number corresponding to the protrusions 3429 formed on the hand 3420 , and is formed at positions corresponding to the protrusions 3429 . When the upper and lower positions of the hand 3420 and the carrier plate 3240 are changed in a position where the hand 3420 and the carrier plate 3240 are vertically aligned, the substrate W between the hand 3420 and the carrier plate 3240 is transmission takes place The transport plate 3240 is mounted on the guide rail 3249 , and may be moved between the first region 3212 and the second region 3214 along the guide rail 3249 by a driver 3246 . A plurality of slit-shaped guide grooves 3242 are provided in the carrying plate 3240 . The guide groove 3242 extends from the end of the carrying plate 3240 to the inside of the carrying plate 3240 . The length direction of the guide grooves 3242 is provided along the second direction 14 , and the guide grooves 3242 are spaced apart from each other along the first direction 12 . The guide groove 3242 prevents the transfer plate 3240 and the lift pins 1340 from interfering with each other when the substrate W is transferred between the transfer plate 3240 and the heating unit 3230 .

The substrate W is heated in a state where the substrate W is placed directly on the transfer plate 3240 , and the substrate W is cooled by the transfer plate 3240 on which the substrate W is placed and the cooling plate 3222 . made in contact with The transfer plate 3240 is made of a material having a high heat transfer rate so that heat transfer between the cooling plate 3222 and the substrate W is well made. According to an example, the carrying plate 3240 may be provided with a metal material.

The heating unit 3230 provided in some of the heat treatment chambers 3200 may supply a gas while heating the substrate W to improve the adhesion rate of the photoresist to the substrate W. According to an example, the gas may be hexamethyldisilane gas.

Hereinafter, an exhaust unit of the present invention will be described in detail with reference to FIGS. 8 to 11 .

8 is a cross-sectional view showing an exhaust unit of the present invention. Referring to FIG. 8 , the exhaust unit may include a pipe and a vibration applying member 5060 for applying vibration to the pipe. The vibration applying member 5060 may be installed on the outer wall of the pipe, and the vibration applying member 5060 may be a motor or an ultrasonic applicator.

The pipe may include an individual pipe 5040 connected to each process chamber 6000 and a main pipe 5020 to which a plurality of individual pipes 5040 are connected. The vibration applying member 5060 may be installed on the main pipe 5020 to apply vibration to the main pipe 5020 .

9 is a view showing an exhaust unit of the present invention. Referring to FIG. 9 , the vibration applying member 5060 may be provided between points where a plurality of individual pipes 5040 are connected, respectively.

In this case, the process chamber 6000 may be the liquid treatment chamber described above with reference to FIG. 4 or the heat treatment chamber described above with reference to FIG. 6 . When the process chamber 6000 is a liquid processing chamber, an individual pipe 5040 of the exhaust unit may be connected to an exhaust port 3680 of the liquid processing chamber.

The exhaust unit exhausts the process by-products generated in the processing space in the liquid processing chamber. For example, the process by-product may be fume volatilized from a film applied on the substrate W. The plurality of chambers are positioned to be stacked on each other, and an exhaust unit may be connected with an exhaust port 3680 to exhaust a processing space for each of them.

10 is a perspective view showing a cross-sectional view of an exhaust unit connected to the heat treatment chamber of FIG. 6 according to the present invention. Referring to FIG. 9 , when the process chamber 6000 is a heat treatment chamber, individual pipes 3282 of the exhaust unit may be connected to the processing space 1110 in the housing 1120 , respectively, and may be connected to the main pipe 3284 . The exhaust unit exhausts process by-products generated in the processing space in the heat treatment chamber. For example, the process by-product may be fume volatilized while heating the substrate. A plurality of chambers may be positioned to be stacked on each other, and an exhaust unit may be provided to exhaust a processing space for each of them.

Optionally, a plurality of exhaust units may be provided, one of which may be connected to the chambers located in the application module 30a, and the other one may be connected to the chambers located in the developing module 30b.

Hereinafter, the substrate processing method of the present invention will be described in detail with reference to FIG. 11 . The present invention may include a controller, and the controller may control the vibration of the vibration applying member 5060 to perform the following substrate processing method.

11 is a graph illustrating a pressure change with time inside a pipe. Area A shown in FIG. 11 represents the normal range of the internal pressure of the pipe required in the process. In the present invention, the internal pressure of the pipe is continuously measured. By measuring the internal pressure of the pipe, if the internal pressure of the pipe is within a preset range (A), a periodic vibration may be applied to the pipe through the vibration applying member 5060 . The vibration applying member 5060 applies vibration to the pipe in accordance with a preset cycle, thereby dropping the fumes deposited on the pipe so that they can be discharged together when exhausted.

By measuring the internal pressure of the pipe, if the internal pressure of the pipe is out of the preset range (A), continuous vibration is applied to the pipe through the vibration applying member 5060 until the internal pressure of the pipe enters the preset range. can do.

For example, when the internal pressure of the pipe exceeds the preset range (A) or the internal pressure of the pipe is less than the preset range (A), the pipe continues to flow until the internal pressure of the pipe enters the preset range. vibration can be applied.

The processing module 30 of the above-described substrate processing apparatus 1 has been described as performing a coating process and a developing process. However, unlike this, the substrate processing apparatus 1 may include only the index module 20 and the processing module 30 without an interface module. In this case, the processing module 30 performs only the coating process, and the film applied on the substrate W may be a spin-on hard mask film (SOH).

The above detailed description is illustrative of the present invention. In addition, the above description shows and describes preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications are possible within the scope of the concept of the invention disclosed herein, the scope equivalent to the written disclosure, and/or within the scope of skill or knowledge in the art. The written embodiment describes the best state for implementing the technical idea of the present invention, and various changes required in the specific application field and use of the present invention are possible. Accordingly, the detailed description of the present invention is not intended to limit the present invention to the disclosed embodiments. Also, the appended claims should be construed as including other embodiments.

5020: main pipe
5040: individual pipe
5060: vibration applying member
6000: process chamber

Claims (11)

An apparatus for processing a substrate, comprising:
a process chamber having a processing space therein and processing a substrate in the processing space; And
Including an exhaust unit for exhausting the processing space,
The exhaust unit is
plumbing department; And
a vibration applying member for applying vibration to the pipe;
a controller for controlling the vibration of the vibration applying member; including,
In the controller, when the internal pressure of the pipe is in a preset range, the vibration applying member applies periodic vibration to the pipe,
When the internal pressure of the pipe is out of the preset range, the vibration applying member controls the vibration applying member so that the vibration applying member continuously applies the vibration to the pipe until the internal pressure of the pipe enters the preset range. Device. delete delete According to claim 1,
The vibration applying member is a substrate processing apparatus installed on the outer wall of the pipe. According to claim 1,
The vibration applying member is a substrate processing apparatus including a motor. According to claim 1,
The vibration applying member is a substrate processing apparatus including an ultrasonic applicator. According to claim 1,
The process chamber is provided in plurality,
The pipe is
an individual pipe connected to each of the process chambers;
It includes a main pipe to which the plurality of individual pipes are connected,
The vibration applying member is a substrate processing apparatus installed in the main pipe. 8. The method of claim 7,
The vibration applying member is a substrate processing apparatus respectively provided between points to which the plurality of individual pipes are connected. A method of processing a substrate, comprising:
Process the substrate provided in the processing space in the process chamber, exhaust the processing space through a pipe, and apply vibration to the pipe to drop the fumes deposited on the pipe from the pipe,
By measuring the internal pressure of the pipe,
When the internal pressure of the pipe is within a preset range, a periodic vibration is applied to the pipe,
When the internal pressure of the pipe is out of a preset range, continuously applying vibration to the pipe until the internal pressure of the pipe enters within a preset range.
delete delete

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