KR102262026B1 - Apparatus for processing substrate - Google Patents

Abstract

A substrate processing apparatus is provided. A substrate processing apparatus includes a process chamber providing a processing space for a substrate, a substrate support for supporting the substrate, and a wall liner disposed to surround an edge of the substrate support, wherein the wall liner comprises: an entrance and exit opening for entry and exit, and at least one dummy opening disposed along a circumference of the wall liner, wherein the dummy opening is configured to uniformly form a heat distribution along an edge of the substrate support during processing of the substrate It has a shape, size and arrangement.

Description

Substrate processing apparatus {Apparatus for processing substrate}

The present invention relates to a substrate processing apparatus.

When manufacturing a semiconductor device or a display device, various processes such as photography, etching, ashing, ion implantation, thin film deposition, and cleaning are performed. Here, the photographic process includes coating, exposure, and developing processes. A photoresist is applied on a substrate (i.e., a coating process), a circuit pattern is exposed on the substrate on which a photosensitive film is formed (i.e., an exposure process), and an exposed region of the substrate is selectively developed (i.e., a developing process).

In general, plasma may be used to etch a thin film formed on a wafer or a substrate in a semiconductor manufacturing process. The thin film may be etched by causing plasma to collide with the wafer or substrate by an electric field formed inside the process chamber.

SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing apparatus.

The problems of the present invention are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

One aspect of the substrate processing apparatus of the present invention for achieving the above object includes a process chamber providing a processing space for a substrate, a substrate support for supporting the substrate, and an edge of the substrate support to surround the edge of the substrate support. a wall liner disposed therein, wherein the wall liner comprises an access opening for entry and exit of the substrate, and at least one dummy opening disposed along a circumference of the wall liner, the dummy opening being configured to process the substrate. It has a shape, size, and arrangement such that heat distribution is uniformly formed along the edge of the substrate support.

The shape, size and arrangement of the dummy opening are determined according to a distance from the entrance opening.

The dummy opening is formed to be larger as the distance from the entrance opening increases.

The dummy opening includes a plurality of smaller than the entry/exit opening, and a distance between the entry/exit opening and the plurality of dummy openings decreases as the distance from the entry/exit opening increases.

The substrate processing apparatus has a ring shape surrounding the outer edge of the wall liner, and further includes a shutter for simultaneously opening or closing the access opening and the dummy opening.

The details of other embodiments are included in the detailed description and drawings.

1 is a view showing a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is a view illustrating the wall liner and shutter shown in FIG. 1 .
3 and 4 are exemplary views of the wall liner shown in FIGS. 1 and 2 .
5 to 8 are views showing a wall liner according to another embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Advantages and features of the present invention, and a method for achieving them will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments published below, but may be implemented in various different forms, and only these embodiments allow the publication of the present invention to be complete, and common knowledge in the technical field to which the present invention pertains. It is provided to fully inform the possessor of the scope of the invention, and the present invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout.

Reference to an element or layer “on” or “on” another element or layer includes not only directly on the other element or layer, but also with intervening other layers or elements. include all On the other hand, reference to an element "directly on" or "immediately on" indicates that no intervening element or layer is interposed.

Spatially relative terms "below", "beneath", "lower", "above", "upper", etc. It can be used to easily describe a correlation between an element or components and other elements or components. Spatially relative terms should be understood as terms including different orientations of the device during use or operation in addition to the orientation shown in the drawings. For example, if an element shown in the figures is turned over, an element described as "beneath" or "beneath" another element may be placed "above" the other element. Accordingly, the exemplary term “below” may include both directions below and above. The device may also be oriented in other orientations, and thus spatially relative terms may be interpreted according to orientation.

Although first, second, etc. are used to describe various elements, components, and/or sections, it should be understood that these elements, components, and/or sections are not limited by these terms. These terms are only used to distinguish one element, component, or sections from another. Accordingly, it goes without saying that the first element, the first element, or the first section mentioned below may be the second element, the second element, or the second section within the spirit of the present invention.

The terminology used herein is for the purpose of describing the embodiments and is not intended to limit the present invention. As used herein, the singular also includes the plural unless specifically stated otherwise in the phrase. As used herein, "comprises" and/or "comprising" refers to the presence of one or more other components, steps, operations and/or elements mentioned. or addition is not excluded.

Unless otherwise defined, all terms (including technical and scientific terms) used herein may be used in the meaning commonly understood by those of ordinary skill in the art to which the present invention belongs. In addition, terms defined in a commonly used dictionary are not to be interpreted ideally or excessively unless clearly defined in particular.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, and in the description with reference to the accompanying drawings, the same or corresponding components are assigned the same reference numbers regardless of the reference numerals and overlapped therewith. A description will be omitted.

1 is a view showing a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 1 , the substrate processing apparatus 10 includes a process chamber 100 , a substrate support unit 200 , a showerhead 300 , a first gas tank 410 , a second gas tank 420 , and first electric power. It is configured to include a supply unit 510 , a second power supply unit 520 , a third power supply unit 530 , a heater 600 , a heat medium supply unit 710 , and a refrigerant supply unit 720 .

The process chamber 100 provides a processing space 101 of the substrate W. An outlet 120 may be provided on the bottom surface of the process chamber 100 . The outlet 120 is connected to the outlet line 121 . By-products and gases generated during the processing of the substrate W may be discharged to the outside through the discharge port 120 and the discharge line 121 .

A wall liner 130 may be provided inside the process chamber 100 . The wall liner 130 prevents the inner surface of the process chamber 100 from being damaged by arc discharge, and prevents impurities generated during the process of the substrate W from being deposited in the process chamber 100 . can To this end, the wall liner 130 may be disposed to surround the substrate support 200 .

The wall liner 130 may have an exit opening 131 for entry and exit of the substrate W. The access opening 131 may communicate with the substrate entrance 103 of the process chamber 100 . A shutter 190 may be provided between the entrance opening 131 and the substrate entrance 103 . The shutter 190 may move in the vertical direction to open or close the entry/exit opening 131 . When the shutter 190 opens the entry/exit opening 131 , the substrate W may be loaded or unloaded through the entry/exit opening 131 and the substrate entrance/exit 103 . When a process for the substrate W is performed, the shutter 190 may close the entry/exit opening 131 to block the processing space 101 from the outside.

The substrate support unit 200 serves to support the substrate (W). The substrate support 200 may be disposed under the processing space 101 .

The substrate support 200 includes a base plate 210 , a main body 220 , a chuck 230 , a focus ring 240 , and a ring support 250 .

The base plate 210 serves to support the main body 220 , the chuck 230 , the focus ring 240 , and the ring supporter 250 . The base plate 210 may be an insulator.

The main body 220 may be provided between the base plate 210 and the chuck 230 . A heat medium circulation pipe 221 and a refrigerant circulation pipe 222 may be provided inside the main body 220 . The thermal medium may circulate through the thermal medium circulation pipe 221 , and the refrigerant may circulate through the refrigerant circulation pipe 222 . The heat medium circulation pipe 221 and the refrigerant circulation pipe 222 may be arranged in a spiral shape inside the main body 220 . As the thermal medium circulates through the thermal medium circulation pipe 221 , the main body 220 is heated, and as the refrigerant circulates through the refrigerant circulation pipe 222 , the main body 220 may be cooled.

The main body 220 may be made of metal. The chuck 230 in close contact with the main body 220 may be affected by the temperature of the main body 220 . As the main body 220 is heated, the chuck 230 may be heated, and as the main body 220 cools, the chuck 230 may be cooled.

A thermal medium supply pipe 221a for supplying a thermal medium to the upper portion of the chuck 230 may be connected to the thermal medium circulation pipe 221 . A thermal medium may be supplied to the substrate W through the thermal medium supply pipe 221a.

The thermal medium supply unit 710 may supply a thermal medium to the thermal medium circulation pipe 221 , and the refrigerant supply unit 720 may supply the refrigerant to the refrigerant circulation pipe 222 . In the present invention, the thermal medium may be helium gas as an inert gas, but the thermal medium of the present invention is not limited to helium gas.

The chuck 230 serves to support the substrate (W). In the present invention, the chuck 230 may be an electrostatic chuck. That is, the chuck 230 may adsorb the substrate W with an electrostatic force. However, the chuck 230 of the present invention is not limited to the electrostatic chuck, and the chuck 230 may hold and support the substrate W in a mechanical manner. Hereinafter, the chuck 230 will be mainly described as an electrostatic chuck.

The body of the chuck 230 may be a dielectric material. An electrostatic electrode 231 and a heating unit 232 may be provided inside the chuck 230 . The electrostatic electrode 231 may be electrically connected to the second power supply 520 . The electrostatic electrode 231 may generate electrostatic power by the power supplied from the second power supply unit 520 . The substrate W may be adsorbed to the chuck 230 by the corresponding electrostatic force.

The heating unit 232 may be electrically connected to the third power supply 530 . The heating unit 232 may be heated by power supplied from the third power supply 530 . Heat of the heating unit 232 may be transferred to the substrate (W). The substrate W may be maintained at a constant temperature by the heat of the heating unit 232 . The heating unit 232 may be provided in the form of a coil and may be arranged in a spiral shape inside the chuck 230 .

The second power supply unit 520 may supply power to the electrostatic electrode 231 , and the third power supply unit 530 may supply power to the heating unit 232 . Here, the power supplied by the second power supply unit 520 may be DC power.

The focus ring 240 may be provided in the form of a ring to surround the edge of the chuck 230 . The focus ring 240 serves to adjust an electric field formed at the edge of the chuck 230 . To this end, the focus ring 240 may be formed of a material having a dielectric constant of a certain size.

The ring supporter 250 may support the focus ring 240 with respect to the base plate 210 . The focus ring 240 may maintain a predetermined height with respect to the base plate 210 by the ring support 250 to maintain a state surrounding the edge of the chuck 230 . The ring support 250 may be formed of an insulating material.

The showerhead 300 serves to inject a process gas for a process on the substrate W to the substrate W. The showerhead 300 may be disposed above the processing space 101 . The process gas sprayed from the showerhead 300 is sprayed downward to reach the substrate W.

In the present invention, the process gas used for processing the substrate W may include a first process gas GS1 and a second process gas GS2 . The first process gas GS1 and the second process gas GS2 may be introduced into the processing space 101 through the process gas inlet 110 . A first inlet line 111 and a second inlet line 112 may be connected to the process gas inlet 110 . The first process gas GS1 moves through the first inlet line 111 and flows into the processing space 101 , and the second process gas GS1 moves through the second inlet line 112 to the processing space ( 101) can be introduced.

The first process gas GS1 and the second process gas GS2 may react with each other to be sprayed onto the substrate W. For example, the first process gas GS1 may serve as a reaction gas, and the second process gas GS2 may serve as a source gas. That is, the first process gas GS1 may activate the second process gas GS2 .

The showerhead 300 may spray the first process gas GS1 and the second process gas GS2 to the substrate W. The first process gas GS1 and the second process gas GS2 may be sequentially injected. After the first process gas GS1 and the second process gas GS2 are injected from the showerhead 300 , they may collide with each other to react. Then, the second process gas GS2 activated by the first process gas GS1 arrives at the substrate W to perform a process treatment on the substrate W. For example, the activated second process gas GS2 may etch the substrate W or may be deposited on the substrate W as a thin film.

The showerhead 300 is configured to include an annular support 310 , an injection unit 320 , and an electrode plate 330 . The annular support 310 serves to fix the showerhead 300 to the process chamber 100 while spacing the sprayer 320 from the ceiling surface of the process chamber 100 by a predetermined distance. A predetermined space may be formed between the ceiling surface of the process chamber 100 and the injection unit 320 by the annular support 310 . Hereinafter, a space formed between the ceiling surface of the process chamber 100 and the injection unit 320 is referred to as a diffusion space 102 .

The electrode plate 330 may receive RF power. RF power may be provided by the first power supply 510 . The electrode plate 330 may be disposed such that one wide surface of the electrode plate 330 is in close contact with the ceiling surface of the process chamber 100 .

The injector 320 is disposed under the electrode plate 330 to inject the first process gas GS1 and the second process gas GS2 . To this end, the injector 320 may include an injection hole SH for injecting the first process gas GS1 and the second process gas GS2 . The first process gas GS1 and the second process gas GS2 may be introduced into the processing space 101 through the injection hole SH.

The diffusion space 102 formed between the ceiling surface of the process chamber 100 and the injection unit 320 may communicate with the injection hole SH. The first process gas GS1 and the second process gas GS2 diffused in the diffusion space 102 may be injected into the processing space 101 through the injection hole SH.

When the first power supply unit 510 supplies RF power to the electrode plate 330 , the first process gas GS1 and the second process gas GS2 injected into the processing space 101 may be excited into plasma. . The first process gas GS1 and the second process gas GS2 may react with each other in a plasma excited state.

The first gas tank 410 may accommodate the first process gas GS1 , and the second gas tank 420 may accommodate the second process gas GS2 . A first valve V1 is provided in the first inlet line 111 connecting the first gas tank 410 and the process gas inlet 110 . Similarly, the second gas tank 420 and the process gas inlet 110 are provided. ) may be provided with a first valve (V2) in the second inlet line 112 connecting the. When a process treatment is performed on the substrate W, the first valve V1 and the second valve V2 are opened to allow the first process gas GS1 and the second process gas GS2 to flow into the process chamber 100 . It may be injected into the processing space 101 . In addition, when the process treatment of the substrate W is completed, the first valve V1 and the second valve V2 are closed, so that the first process gas GS1 and the second process gas ( GS1 ) and the second process gas ( GS1 ) are introduced into the process chamber 100 . GS2) may be blocked from being injected.

The heater 600 serves to heat the showerhead 300 . The first process gas GS1 and the second process gas GS2 injected into the injection unit 320 may be heated and then injected through the injection hole SH. As the first process gas GS1 and the second process gas GS2 are heated, a mutual reaction may be more actively performed.

As described above, the wall liner 130 is used to protect the inner surface of the process chamber 100 , and an entry/exit opening 131 for entry and exit of the substrate W may be formed in the wall liner 130 . When the entry/exit opening 131 is formed on only one side of the wall liner 130 , heat may be non-uniformly distributed along the circumference of the wall liner 130 . Non-uniform heat distribution may act on the substrate W. In particular, a region adjacent to the entry/exit opening 131 among the entire region of the substrate W may have a different temperature than other regions. When the access opening 131 is opened, heat from the processing space 101 may be discharged through the access opening 131 . In this case, heat in a space adjacent to the entry/exit opening 131 may be intensively lost. When heat in the space adjacent to the access opening 131 is lost, a defect may occur in the area of the substrate W included in the corresponding space.

In order to prevent heat imbalance caused by the wall liner 130 , the wall liner 130 according to the embodiment of the present invention may include the dummy opening 132 together with the entry/exit opening 131 . The dummy opening 132 serves to uniformly distribute heat along the circumference of the wall liner 130 .

FIG. 2 is a view illustrating the wall liner and shutter shown in FIG. 1 .

Referring to FIG. 2 , the wall liner 130 may include an exit opening 131 and a dummy opening 132 .

The wall liner 130 may be provided in a hollow cylindrical shape. At least one dummy opening 132 may be disposed along the circumference of the wall liner 130 . Specifically, the dummy opening 132 may be disposed on the same circumference of the wall liner 130 together with the entry/exit opening 131 .

The shutter 190 may have a ring shape surrounding the outer edge of the wall liner 130 . The shutter 190 may simultaneously open or close the access opening 131 and the dummy opening 132 while moving in the vertical direction along the outer surface of the wall liner 130 .

The dummy opening 132 may have a shape, size, and arrangement such that heat distribution is uniformly formed along the edge of the substrate support 200 during processing of the substrate W. Referring to FIG. The shutter 190 is opened to lose heat in a space adjacent to the access opening 131 , and then the access opening 131 may be closed for processing on the substrate W . When the dummy opening 132 is formed on the same circumference as the entry/exit opening 131 , heat transferred to the region of the substrate W adjacent to the dummy opening 132 may be reduced, and along the edge of the substrate W Heat distribution can be formed uniformly.

3 and 4 are exemplary views of the wall liner shown in FIGS. 1 and 2 .

3 and 4 , the wall liner 130 may include an exit opening 131 and a dummy opening 132 . The entry/exit opening 131 and the dummy opening 132 may be disposed on the same circumference of the wall liner 130 .

The shape, size, and arrangement of the dummy opening 132 may be determined according to a distance from the entrance opening 131 . Specifically, the dummy opening 132 may be formed to be larger as the distance from the entrance opening 131 increases. 3 shows the wall liner 130 including two dummy openings 132 . The two dummy openings 132 may have a larger shape than the entrance opening 131 . 4 shows the wall liner 130 including three dummy openings 132 . The dummy opening 132 adjacent to the entry/exit opening 131 has a larger shape than the entry/exit opening 131 , and the dummy opening 132 disposed far from the entry/exit opening 131 has a larger shape than the adjacent dummy opening 132 . can have

As the dummy opening 132 is formed to be larger than the entry/exit opening 131 , the transfer of heat to the region of the substrate W adjacent to the dummy opening 132 is reduced, and heat loss from the entry/exit opening 131 is reduced. It is possible to achieve thermal balance with the area of W).

3 and 4 , both sides may be symmetrical with respect to an imaginary line L connecting the center Ax of the wall liner 130 to the center of the entry/exit opening 131 . The sizes of the access opening 131 and the dummy opening 132 occupying the area (a) may be the same as the sizes of the access opening 131 and the dummy opening 132 occupying the area (b). Here, the size may mean the area of each opening.

5 to 8 are views showing a wall liner according to another embodiment of the present invention.

Referring to FIG. 5 , the wall liner 140 may include an exit opening 141 and a dummy opening 142 . The entry/exit opening 141 and the dummy opening 142 may be disposed on the same circumference of the wall liner 140 .

The entry/exit opening 141 and the dummy opening 142 may be formed to be elongated along the circumference. The length of the entrance opening 141 and the dummy opening 142 may be the same. The width of the dummy opening 142 may vary according to a distance from the entrance opening 141 . The width of the dummy opening 142 may increase as the distance from the entrance opening 141 increases. Accordingly, the area of the dummy opening 142 may increase as the distance from the entrance opening 141 increases.

Referring to FIG. 6 , the wall liner 150 may include an exit opening 151 and a dummy opening 152 . The entry/exit opening 151 and the dummy opening 152 may be disposed on the same circumference of the wall liner 150 .

The entry/exit opening 151 and the dummy opening 152 may be formed to be elongated along the circumference. The length of the entry/exit opening 151 and the dummy opening 152 may be the same. The width of each of the dummy openings 152 may be inclined to gradually increase as the distance from the entrance opening 151 increases. Accordingly, the area of the dummy opening 152 may increase as the distance from the entrance opening 151 increases.

Referring to FIG. 7 , the wall liner 160 may include an exit opening 161 and a dummy opening 162 . The entry/exit opening 161 and the dummy opening 162 may be disposed on the same circumference of the wall liner 160 .

The entry/exit opening 161 and the dummy opening 162 may be formed to be elongated along the circumference. The dummy opening 162 may include a plurality of smaller than the entrance opening 161 . The lengths of the plurality of dummy openings 162 may all be the same, and the intervals between the entry/exit opening 161 and the plurality of dummy openings 162 may be the same. The width of each of the dummy openings 162 may increase as the distance from the entrance opening 161 increases.

Referring to FIG. 8 , the wall liner 170 may include an exit opening 171 and a dummy opening 172 . The entry/exit opening 171 and the dummy opening 172 may be disposed on the same circumference of the wall liner 170 .

The entry/exit opening 171 and the dummy opening 172 may be formed to be elongated along the circumference. The dummy opening 172 may include a plurality of smaller than the entrance opening 171 . All of the plurality of dummy openings 172 may have the same length. A distance between the access opening 171 and the plurality of dummy openings 172 may decrease as the distance from the entrance opening 171 increases.

As described above, the area of the dummy openings 132 , 142 , 152 , 162 , and 172 corresponding to the unit area of the substrate W increases as the distance from the access openings 131 , 141 , 151 , 161 and 171 increases, The influence of the dummy openings 132 , 142 , 152 , 162 , and 172 acting on W may gradually increase. For this reason, as the distance from the access openings 131 , 141 , 151 , 161 , and 171 is increased, the heat transferred to the substrate W is reduced, and heat loss generated in the entry and exit openings 131 , 141 , 151 , 161 and 171 Considering that, a uniform heat distribution may be formed along the edge of the substrate W.

Although the embodiments of the present invention have been described with reference to the above and the accompanying drawings, those of ordinary skill in the art to which the present invention pertains can implement the present invention in other specific forms without changing its technical spirit or essential features. You will understand that there is Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive.

10: substrate processing apparatus 100: process chamber
110: process gas inlet 111: first inlet line
112: second inlet line 120: outlet
121: discharge line 130, 140, 150, 160, 170: wall liner
131, 141, 151, 161, 171: access opening
132, 142, 152, 162, 172: dummy opening
190: shutter 200: substrate support
210: base plate 220: main body
230: chuck
240, 810, 820, 830, 840: focus ring
250: ring support 300: showerhead
310: annular support 320: injection unit
330: injection unit 410: first gas tank
420: second gas tank 510: first power supply
520: second power supply 530: third power supply
600: heater 710: heat medium supply unit
720: refrigerant supply

Claims (5)

a process chamber providing a processing space for the substrate;
a substrate support for supporting the substrate; and
Including a wall liner disposed to surround the edge of the substrate support,
The wall liner,
an exit opening for entry and exit of the substrate; and
at least one dummy opening disposed along a circumference of the wall liner;
The dummy opening has a shape, size, and arrangement such that heat distribution is uniformly formed along an edge of the substrate support during processing of the substrate;
The shape, size, and arrangement of the dummy opening are determined according to a distance from the entry/exit opening. delete According to claim 1,
The dummy opening is formed to be larger as the distance from the entry/exit opening increases. According to claim 1,
The dummy opening includes a plurality of smaller than the entrance opening
A distance between the access opening and each of the plurality of dummy openings decreases as the distance from the access opening increases. According to claim 1,
and a shutter having a ring shape surrounding an outer edge of the wall liner and simultaneously opening or closing the access opening and the dummy opening.

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