KR102261732B9 - 전계 효과 트랜지스터 - Google Patents

전계 효과 트랜지스터

Info

Publication number
KR102261732B9
KR102261732B9 KR1020160069686A KR20160069686A KR102261732B9 KR 102261732 B9 KR102261732 B9 KR 102261732B9 KR 1020160069686 A KR1020160069686 A KR 1020160069686A KR 20160069686 A KR20160069686 A KR 20160069686A KR 102261732 B9 KR102261732 B9 KR 102261732B9
Authority
KR
South Korea
Prior art keywords
field effect
effect transistor
transistor
field
effect
Prior art date
Application number
KR1020160069686A
Other languages
English (en)
Other versions
KR20170074153A (ko
KR102261732B1 (ko
Inventor
민병규
윤형섭
이종민
강동민
김동영
김성일
김해천
안호균
이상흥
임종원
조규준
주철원
도재원
신민정
장성재
장유진
정현욱
Original Assignee
한국전자통신연구원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한국전자통신연구원 filed Critical 한국전자통신연구원
Publication of KR20170074153A publication Critical patent/KR20170074153A/ko
Application granted granted Critical
Publication of KR102261732B1 publication Critical patent/KR102261732B1/ko
Publication of KR102261732B9 publication Critical patent/KR102261732B9/ko

Links

Classifications

    • H01L29/778—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H01L29/66431—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13064—High Electron Mobility Transistor [HEMT, HFET [heterostructure FET], MODFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Junction Field-Effect Transistors (AREA)
KR1020160069686A 2015-12-18 2016-06-03 전계 효과 트랜지스터 KR102261732B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20150181944 2015-12-18
KR1020150181944 2015-12-18

Publications (3)

Publication Number Publication Date
KR20170074153A KR20170074153A (ko) 2017-06-29
KR102261732B1 KR102261732B1 (ko) 2021-06-09
KR102261732B9 true KR102261732B9 (ko) 2022-04-15

Family

ID=59280377

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020160069686A KR102261732B1 (ko) 2015-12-18 2016-06-03 전계 효과 트랜지스터

Country Status (1)

Country Link
KR (1) KR102261732B1 (ko)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4902131B2 (ja) * 2005-03-31 2012-03-21 住友電工デバイス・イノベーション株式会社 半導体装置およびその製造方法
JP2012109492A (ja) * 2010-11-19 2012-06-07 Sanken Electric Co Ltd 化合物半導体装置
JP5874173B2 (ja) * 2011-02-25 2016-03-02 富士通株式会社 化合物半導体装置及びその製造方法
JP5995309B2 (ja) * 2012-03-28 2016-09-21 住友電工デバイス・イノベーション株式会社 半導体装置及びその製造方法

Also Published As

Publication number Publication date
KR20170074153A (ko) 2017-06-29
KR102261732B1 (ko) 2021-06-09

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Legal Events

Date Code Title Description
E902 Notification of reason for refusal
E90F Notification of reason for final refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
G170 Re-publication after modification of scope of protection [patent]