KR102247829B1 - 임프린트 템플레이트 복제 프로세스 중에 압출을 제어하기 위한 방법 - Google Patents

임프린트 템플레이트 복제 프로세스 중에 압출을 제어하기 위한 방법 Download PDF

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KR102247829B1
KR102247829B1 KR1020170174768A KR20170174768A KR102247829B1 KR 102247829 B1 KR102247829 B1 KR 102247829B1 KR 1020170174768 A KR1020170174768 A KR 1020170174768A KR 20170174768 A KR20170174768 A KR 20170174768A KR 102247829 B1 KR102247829 B1 KR 102247829B1
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template
substrate
mesa
region
replica
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KR20180071971A (ko
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최병진
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캐논 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Mechanical Engineering (AREA)
KR1020170174768A 2016-12-20 2017-12-19 임프린트 템플레이트 복제 프로세스 중에 압출을 제어하기 위한 방법 Active KR102247829B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/385,353 2016-12-20
US15/385,353 US10288999B2 (en) 2016-12-20 2016-12-20 Methods for controlling extrusions during imprint template replication processes

Publications (2)

Publication Number Publication Date
KR20180071971A KR20180071971A (ko) 2018-06-28
KR102247829B1 true KR102247829B1 (ko) 2021-05-04

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US (1) US10288999B2 (enExample)
JP (1) JP6951226B2 (enExample)
KR (1) KR102247829B1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10627715B2 (en) 2016-10-31 2020-04-21 Canon Kabushiki Kaisha Method for separating a nanoimprint template from a substrate
US11454883B2 (en) 2016-11-14 2022-09-27 Canon Kabushiki Kaisha Template replication
JP7194068B2 (ja) * 2019-04-16 2022-12-21 キヤノン株式会社 モールド作製方法、および物品の製造方法
JP2021145076A (ja) * 2020-03-13 2021-09-24 キオクシア株式会社 原版および半導体装置の製造方法
JP7458948B2 (ja) * 2020-09-17 2024-04-01 キオクシア株式会社 テンプレート、テンプレートの製造方法、及び半導体装置の製造方法
WO2022173896A1 (en) * 2021-02-10 2022-08-18 Opt Industries, Inc. Additive manufacturing on pliable substrates
US12085852B2 (en) 2021-12-27 2024-09-10 Canon Kabushiki Kaisha Template, method of forming a template, apparatus and method of manufacturing an article

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7157036B2 (en) 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
US20070228589A1 (en) 2002-11-13 2007-10-04 Molecular Imprints, Inc. Method for expelling gas positioned between a substrate and a mold
US7473090B2 (en) 2005-01-31 2009-01-06 Molecular Imprints, Inc. Imprint lithography template to facilitate control of liquid movement
US20100320645A1 (en) 2009-06-19 2010-12-23 Molecular Imprints, Inc. Dual zone template chuck
US8076386B2 (en) 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
JP2014216594A (ja) 2013-04-30 2014-11-17 大日本印刷株式会社 レプリカテンプレートの製造方法、レプリカテンプレート、レプリカテンプレートを用いたウエハの製造方法、およびマスターテンプレートの製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5276830B2 (ja) * 2007-11-13 2013-08-28 公益財団法人神奈川科学技術アカデミー インプリント用モールドの製造方法
JP5395757B2 (ja) * 2010-07-08 2014-01-22 株式会社東芝 パターン形成方法
JP5942551B2 (ja) 2012-04-03 2016-06-29 大日本印刷株式会社 ナノインプリント用マスターテンプレート及びレプリカテンプレートの製造方法
JP6255789B2 (ja) * 2013-08-09 2018-01-10 大日本印刷株式会社 インプリント方法およびインプリント装置
JP6331292B2 (ja) * 2013-08-30 2018-05-30 大日本印刷株式会社 インプリント方法およびインプリント装置
JP6628129B2 (ja) * 2014-09-16 2020-01-08 大日本印刷株式会社 パターン形成基板の製造方法、慣らし用基板、及び基板の組合体
JP6502655B2 (ja) * 2014-11-28 2019-04-17 キヤノン株式会社 モールドおよびその製造方法、インプリント方法、ならびに、物品製造方法
JP2016149578A (ja) * 2016-05-11 2016-08-18 大日本印刷株式会社 ナノインプリント用レプリカテンプレートの製造方法
KR102591120B1 (ko) * 2016-08-29 2023-10-19 에스케이하이닉스 주식회사 나노임프린트 리소그래피를 이용한 패턴 형성 방법
US10627715B2 (en) 2016-10-31 2020-04-21 Canon Kabushiki Kaisha Method for separating a nanoimprint template from a substrate
US11454883B2 (en) 2016-11-14 2022-09-27 Canon Kabushiki Kaisha Template replication
US10969680B2 (en) 2016-11-30 2021-04-06 Canon Kabushiki Kaisha System and method for adjusting a position of a template

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070228589A1 (en) 2002-11-13 2007-10-04 Molecular Imprints, Inc. Method for expelling gas positioned between a substrate and a mold
US7157036B2 (en) 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
US8076386B2 (en) 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US7473090B2 (en) 2005-01-31 2009-01-06 Molecular Imprints, Inc. Imprint lithography template to facilitate control of liquid movement
US20100320645A1 (en) 2009-06-19 2010-12-23 Molecular Imprints, Inc. Dual zone template chuck
JP2014216594A (ja) 2013-04-30 2014-11-17 大日本印刷株式会社 レプリカテンプレートの製造方法、レプリカテンプレート、レプリカテンプレートを用いたウエハの製造方法、およびマスターテンプレートの製造方法

Also Published As

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JP2018101780A (ja) 2018-06-28
JP6951226B2 (ja) 2021-10-20
US10288999B2 (en) 2019-05-14
KR20180071971A (ko) 2018-06-28
US20180169910A1 (en) 2018-06-21

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