KR102215755B1 - Device for depositing thin film and method for depositing thin film using the same - Google Patents

Abstract

The present invention relates to a thin film deposition apparatus and a thin film deposition method, and to a thin film deposition apparatus and a thin film deposition method in which step coverage is improved by stably supplying a large amount of source gas into a reaction chamber.
The present invention, a source material storage unit for storing a liquid source material; A vaporization unit connected to a downstream side of the source material storage unit, including an exhaust means at the downstream side, and vaporizing the liquid source material into a gaseous source gas; A reaction chamber connected to the downstream of the vaporization unit, wherein the vaporization unit supplies the source gas into the reaction chamber through at least one source gas supply pipe, and between the source gas supply pipe and the source material storage unit It relates to a thin film deposition apparatus comprising a plurality of vaporizers arranged in parallel.

Description

Thin film deposition apparatus and thin film deposition method {DEVICE FOR DEPOSITING THIN FILM AND METHOD FOR DEPOSITING THIN FILM USING THE SAME}

The present invention relates to a thin film deposition apparatus and a thin film deposition method, and to a thin film deposition apparatus and a thin film deposition method in which step coverage is improved by stably supplying a large amount of source gas into a reaction chamber.

As the integration of semiconductor devices increases, a decrease in cell cross-sectional area is intensifying, and thus it is very difficult to secure capacitance of a capacitor required for operation of the device.

In particular, atomic layer deposition is mainly used for dielectric layers and electrode materials constituting high-k materials in consideration of step coverage and electrical characteristics of the dielectric layers.

When depositing a thin film on a large-area substrate using such an atomic layer deposition method, a large amount of the flow rate of the source gas flowing into the reaction chamber must be secured, and the stepped coating property on the substrate must be secured stably.

Looking at the atomic layer deposition technology according to the prior art, the raw material is supplied to the vaporizer by controlling the flow rate of the raw material from the raw material storage in which the raw material is stored in a liquid state to a flow control unit. Thereafter, the vaporizer vaporizes the raw material to generate a raw material gas, and the thus generated raw material gas is adsorbed on the substrate in the reaction chamber.

However, in the case of depositing a thin film on a large-area substrate using such a conventional technique, there has been a problem in that there is a limitation in increasing the flow rate of the raw material gas supplied into the reaction chamber because the vaporization capacity of the vaporizer is limited. Even if the flow rate of the raw material gas injected into the reaction chamber can be increased, there has been a problem that the supply flow rate of the raw material gas is not stable.

In this way, in the case of depositing a thin film on a large-area substrate, as in the prior art, when the source gas is not supplied in a large amount and/or the supply flow rate of the source gas is not stable, the stepped coating of the thin film deposited on the substrate There has been a problem of low sex.

In addition, as substrates are required to be highly integrated, the development of substrates with fine line width patterns is increasing. In order to implement such a fine line width pattern on the substrate, the supply flow rate of the raw material gas injected into the reaction chamber Although it should be very abundant, there has been a problem that a sufficient supply flow rate cannot be secured with other atomic layer deposition techniques than in the prior art.

Of course, in order to increase the supply flow rate of the raw material gas injected into the reaction chamber from the vaporizer, a technology to increase the vaporization capacity of one vaporizer has been developed, but its performance is not yet perfect, and the vaporization capacity of the vaporizer is increased. There has been a problem that takes too much time and cost.

Accordingly, an object of the present invention is to provide a thin film deposition apparatus and a thin film deposition method that solve the problems of the prior art.

Specifically, it is an object of the present invention to provide a thin film deposition apparatus and a thin film extension method for stably securing the supply flow rate of the source gas supplied into the reaction chamber while securing a large amount of the supply flow rate of the source gas supplied into the reaction chamber. Is to do.

In addition, an object of the present invention is to provide a thin film deposition apparatus and a thin film deposition method capable of preventing the entire thin film deposition process from being stopped due to a failure of a vaporizer.

According to an embodiment of the present invention, the present invention provides a source material storage unit for storing a liquid source material; A vaporization unit connected to a downstream side of the source material storage unit, including an exhaust means at the downstream side, and vaporizing the liquid source material into a gaseous source gas; A reaction chamber connected to the downstream of the vaporization unit, wherein the vaporization unit supplies the source gas into the reaction chamber through at least one source gas supply pipe, and between the source gas supply pipe and the source material storage unit It is possible to provide a thin film deposition apparatus comprising a plurality of vaporizers arranged in parallel.

In addition, preferably, the vaporization unit further comprises a flow rate control unit connected between the vaporizer and the source material storage unit to adjust the flow rate of the source material supplied from the source material storage unit to the vaporizer. do.

In addition, preferably, the plurality of vaporizers are connected to each flow control unit through respective source material supply pipes connected upstream of each of the plurality of vaporizers, and each downstream of the plurality of vaporizers is one source gas supply pipe It characterized in that it is connected to.

In addition, preferably, the plurality of vaporizers are connected to each flow control unit through respective source material supply pipes connected upstream of each of the plurality of vaporizers, and downstream of each of the plurality of vaporizers is a plurality of source gas supply pipes It is characterized by being connected to each.

In addition, preferably, the plurality of vaporizers are connected to one flow control unit through respective source material supply pipes connected to the upstream of each of the plurality of vaporizers, and the downstream of each of the plurality of vaporizers is one source gas supply pipe It characterized in that it is connected to.

In addition, preferably, the thin film deposition apparatus further comprises a control unit for controlling the source material storage unit, the vaporization unit, and the reaction chamber, and the control unit controls a flow rate of each of the plurality of vaporizers or It is characterized in that the time division control of each of the carburetor.

In addition, preferably, the vaporization unit includes a first vaporizer and the second vaporizer, and the control unit includes, during a source gas injection period for injecting a source gas into the reaction chamber, the first vaporizer and the second vaporizer, respectively The source gas is stored so that the source material is supplied to the reaction chamber by supplying a source material to the first vaporizer and the second vaporizer to vaporize the source gas into a source gas, and supply the source gas formed in the first vaporizer and the second vaporizer to the reaction chamber. It characterized in that the control unit and the vaporization unit.

In addition, preferably, the control unit, for a predetermined first injection time during the source gas injection period, by a predetermined first vaporization capacity in one of the first vaporizer and the second vaporizer, and the first vaporizer and In order to vaporize the source material into a source gas by a preset second vaporization capacity larger than the preset first vaporization capacity in the other vaporizer among the second vaporizers, and the preset first during the source gas injection period. The source material is vaporized as a source gas by the preset second vaporization capacity in the one vaporizer and the preset first vaporization capacity in the other vaporizer during the second injection time other than the injection time. It characterized in that it controls the source gas storage unit and the vaporization unit so as to be.

In addition, preferably, the vaporization unit includes a first vaporizer and the second vaporizer, and the control unit includes a first preset during the source gas injection period during which the source gas is injected into the reaction chamber. During the injection time, a source material is supplied to the first vaporizer and the second vaporizer to vaporize the source material into a source gas in each of the first vaporizer and the second vaporizer to form the entire first vaporizer and the second vaporizer. The source gas storage unit and the vaporization unit are controlled so that the source gas is supplied to the reaction chamber, and the first vaporizer and the first vaporizer and the first vaporizer during a second preset injection time other than the preset first injection time during the source gas injection period. The source gas storage unit and the vaporization unit are controlled so that the source gas formed in the one vaporizer is supplied to the reaction chamber by vaporizing the source material into the source gas only in one of the second vaporizers.

Also, preferably, the control unit is characterized in that the source gas injection period is divided into the preset first injection time executed first and the preset second injection time executed later.

Further, preferably, the control unit is characterized in that the source gas injection period is divided into the preset second injection time executed first and the preset first injection time executed later.

In addition, preferably, the control unit includes a part of the preset second injection time performed first in the source gas injection period, and the preset first injection time performed immediately after a part of the preset second injection time And, it is characterized in that the division into another part of the preset second injection time executed immediately after the preset first injection time.

In addition, preferably, the control unit is configured to vaporize the source material into a source gas by a predetermined first vaporization capacity in each of the first vaporizer and the second vaporizer during the predetermined first injection time, and The source gas to vaporize the source material into a source gas by a predetermined second vaporization capacity larger than the first predetermined vaporization capacity in the one of the first vaporizer and the second vaporizer during a set second injection time. It characterized in that it controls the storage unit and the vaporization unit.

In addition, preferably, the vaporization unit includes a first vaporizer and the second vaporizer, and the control unit includes a first preset during the source gas injection period during which the source gas is injected into the reaction chamber. During the injection time, a source material is supplied to one of the first vaporizer and the second vaporizer to vaporize the source material into a source gas in the one vaporizer, and the source gas formed in the one vaporizer is supplied to the reaction chamber. The source gas storage unit and the vaporization unit are controlled so that the other one of the first vaporizer and the second vaporizer is controlled during a second predetermined injection time except for the predetermined first injection time among the source gas injection time. The source gas storage unit and the vaporization unit are controlled so that the source material is vaporized into the source gas in the vaporizer and the source gas formed in the other vaporizer is supplied to the reaction chamber.

Also, preferably, the control unit is configured to vaporize the source material into a source gas by a predetermined first vaporization capacity in the one vaporizer during the predetermined first injection time, and during the predetermined second injection time. And controlling the source gas storage unit and the vaporization unit to vaporize the source material into a source gas by a predetermined second vaporization capacity larger than the first vaporization capacity in the other vaporizer.

In addition, preferably, the control unit is characterized in that some of the plurality of carburetors are set as a main vaporizer, and the other carburetors of the plurality of carburetors are set as a sub vaporizer.

In addition, preferably, the control unit may control the main vaporization unit and the sub vaporization unit to additionally operate the sub vaporization unit when the vaporization capacity of the main vaporization unit is reduced than the usual vaporization capacity.

In addition, according to another embodiment of the present invention, the present invention, a first high temperature step of increasing the temperature inside the reaction chamber; A source gas supply step of injecting a source gas into the reaction chamber through a gas distribution plate; A first purge gas injection step of injecting a purge gas into the reaction chamber to remove source gas and foreign substances remaining in the reaction chamber; A second high temperature step of re-raising the temperature inside the reaction chamber; A reaction gas supply step of injecting a reaction gas into the reaction chamber through the gas distribution plate; And a second purge gas injection step of injecting a purge gas into the reaction chamber to remove the reaction gas and foreign substances remaining in the reaction chamber, wherein the source gas supply step includes at least a source material storage unit After supplying the source material to a plurality of vaporizers through one or more flow control units, it is possible to provide a thin film deposition method characterized in that the source material is vaporized into a gaseous source gas by operating the plurality of vaporizers. .

In addition, preferably, the plurality of vaporizers are arranged in parallel between the gas distribution plate and the source material storage unit.

In addition, preferably, in the supplying of the source gas, the source gas formed in all of the plurality of carburetors is formed by supplying a source material to all of the plurality of carburetors to vaporize the source material as a source gas in all of the plurality of carburetors. It is characterized in that it is implemented to be supplied to the reaction chamber.

In addition, preferably, in the supplying of the source gas, the source gas formed in all of the plurality of vaporizers is reacted after the source material is vaporized by operating all of the plurality of vaporizers for a predetermined first injection time. After a first supply step of supplying to the chamber and a predetermined second injection time immediately after the predetermined first injection time, only some of the plurality of vaporizers are operated to vaporize the source material into the source gas, and then the partial And a second supply step of supplying the source gas formed in the vaporizer to the reaction chamber.

In addition, preferably, in the supplying of the source gas, only some of the plurality of vaporizers are operated for a predetermined first injection time to vaporize the source material into a source gas, and then the source gas formed in the partial vaporizers is The source material is vaporized as a source gas by operating only a part of the other vaporizers of the plurality of vaporizers during a first supply step of supplying to the reaction chamber and a preset second injection time immediately after the preset first injection time. Then, a second supply step of supplying the source gas formed in the other part of the vaporizer to the reaction chamber.

In addition, preferably, before the source gas supply step, a carburetor setting step of setting some of the plurality of carburetors as a main carburetor, and setting the other carburetors of the plurality of carburetors as a sub-carburetor; further It characterized in that it includes.

In addition, preferably, in the supplying of the source gas, when the vaporization capacity of the main vaporization unit is the same as the usual preset vaporization capacity, only the main vaporization unit is operated to vaporize the source material into a source gas, and then the source gas is It is executed to supply to the reaction chamber, and when the vaporization capacity of the main vaporization unit is reduced than the usual preset vaporization capacity, the sub vaporization unit is additionally operated to additionally supply the source gas to the reaction chamber. .

In addition, preferably, when the vaporization capacity of the main vaporization unit among the other part of the vaporizer is reduced than the usual preset vaporization capacity, the number of additionally operated vaporizers is the total vaporization capacity of the plurality of vaporizers. It is characterized in that it is determined to be more than the capacity.

According to the above-described problem solving means, the present invention uses a plurality of vaporizers to supply source gas to the reaction chamber, thereby securing a large amount of the supply flow rate of the source gas supplied into the reaction chamber, and at the same time supplying the source gas to the reaction chamber. The gas supply flow rate can be stably secured. For this reason, the present invention can significantly improve the step coverage of the thin film deposited on the substrate, and the invention can deposit a thin film having excellent step coverage in the trench even though a trench having a large aspect ratio is formed on the substrate. .

In addition, the present invention can secure a large amount of the supply flow rate of the source gas supplied into the reaction chamber by using a plurality of vaporizers, it is possible to produce more efficient and stable source gas than increasing the vaporization capacity of one vaporizer. .

In addition, according to the present invention, by setting and operating a plurality of vaporizers as a main part and a sub part, it is possible to prevent the entire thin film deposition process from being stopped due to failure of some vaporizers. Accordingly, in the present invention, the thin film deposition process can be continuously executed, and maintenance work for some of the broken carburetors can be performed while maintaining the throughput of the thin film deposition process.

1 is a schematic diagram of a thin film deposition apparatus according to the prior art.
2 is a schematic block diagram of a thin film deposition apparatus according to an embodiment of the present invention.
3 is a schematic diagram of a thin film deposition apparatus according to a first embodiment of the present invention.
4 is a schematic diagram of a thin film deposition apparatus according to a second embodiment of the present invention.
5 is a schematic diagram of a thin film deposition apparatus according to a third embodiment of the present invention.
6 is a schematic diagram of a thin film deposition apparatus according to a fourth embodiment of the present invention.
7 is a schematic flowchart of a thin film deposition method according to an embodiment of the present invention.
8A is a signal graph showing a thin film deposition method according to a first embodiment of the present invention, FIG. 8B is a signal graph showing a thin film deposition method according to a second embodiment of the present invention, and FIG. 8C is a third embodiment of the present invention. A signal graph showing a thin film deposition method according to an embodiment, FIG. 8D is a signal graph showing a thin film deposition method according to a fourth embodiment of the present invention, and FIG. 8E is a thin film deposition method according to the fifth embodiment of the present invention. Fig. 8F is a signal graph showing a thin film deposition method according to a sixth embodiment of the present invention, Fig. 8G is a signal graph showing a thin film deposition method according to a seventh embodiment of the present invention, and Fig. 8H It is a signal graph showing a thin film deposition method according to the eighth embodiment of the present invention.
9A and 9B are schematic partial enlarged cross-sectional views of a substrate showing a state of a thin film deposited by a conventional technique and a thin film extension apparatus according to the present invention.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings so that those of ordinary skill in the art can easily implement them. It should be noted that the reference numbers indicated in the configurations in the accompanying drawings use the same reference numbers as much as possible when indicating the same configuration in other drawings. In addition, in describing the present invention, when it is determined that a detailed description of a related known function or a known configuration may unnecessarily obscure the subject matter of the present invention, a detailed description thereof will be omitted. In addition, certain features presented in the drawings are enlarged or reduced or simplified for ease of description, and the drawings and their components are not necessarily drawn to scale. However, those skilled in the art will readily understand these details.

For reference, hereinafter, the upstream or upstream direction or the upstream portion refers to a direction or portion toward the source material storage unit based on the flow path through which the source material moves from the source material storage unit to the gas distribution plate, and downstream or downstream. The direction or downstream portion refers to a direction or portion toward the gas distribution plate based on a flow path through which the source material moves from the source material storage unit toward the gas distribution plate.

2 is a schematic block diagram of a thin film deposition apparatus 1000 according to an embodiment of the present invention, and FIG. 3 is a schematic diagram of a thin film deposition apparatus 1000 according to the first embodiment of the present invention, and FIG. 4 Is a schematic diagram of a thin film deposition apparatus 1000 according to a second embodiment of the present invention, FIG. 5 is a schematic diagram of a thin film deposition apparatus 1000 according to a third embodiment of the present invention, and FIG. 6 is A schematic diagram of a thin film deposition apparatus 1000 according to a fourth embodiment.

2 to 6, the thin film deposition apparatus 1000 according to an embodiment of the present invention includes a source material storage unit 100, a reaction gas supply unit 300, a purge gas supply unit 400, and vaporization. For controlling the operation of the unit 200, the reaction chamber 500 and the source material storage unit 100, the reaction gas supply unit 300, the purge gas supply unit 400, the vaporization unit 200, and the reaction chamber 500 It includes a control unit.

The source material storage unit 100 is a part that stores a liquid source material, and the source material storage unit 100 is located at the uppermost stream based on the flow of the source material and the source gas.

The vaporization unit 200 is connected to the downstream of the source material storage unit 100 and is a part for vaporizing a liquid source material supplied from the source material storage unit 100 into a gaseous source gas. The vaporization unit 200 supplies vaporized source gas into the reaction chamber 500 to be described later through a gas distribution plate 510 connected to the downstream of the vaporization unit 200.

The vaporization unit 200 includes a plurality of vaporizers and at least one flow rate control unit. The plurality of vaporizers are arranged and connected in series or parallel to the gas distribution plate 510. In addition, the plurality of vaporizers are connected to one source gas supply pipe 511 to supply source gas to the gas distribution plate 510, or each of the plurality of vaporizers is provided with a source gas supply pipe 511 (that is, the plurality of vaporizers). It is configured to supply the source gas to the gas distribution plate 510 by one-to-one connection to the source gas supply pipe 511 of a quantity corresponding to the number of carburetors.

In addition, each of the vaporizers 211 and 221 is provided with exhaust means 216 and 226 in the downstream. Specifically, the downstream portion of each of the vaporizers 211 and 221 is connected to the discharge pipes 212 and 222 through which the vaporized source gas is discharged from the vaporizer, and the downstream portion of the discharge pipes 212 and 222 is The gas distribution plate 510 and the source gas supply pipe 511 are configured to be branched into the discharge pipes 214 and 224 for chambers fluidly connected to the discharge pipes 215 and 225 for exhaust. Exhaust means 216 and 226 are connected to the downstream portion of the exhaust pipes 215 and 225 for exhaust. The exhaust means 216 and 226 are provided with a pumping means such as a vacuum pump, and serve to discharge a source gas inside the carburetor and a carrier gas that assists the movement of the source gas to the outside. That is, if the source gas and/or carrier gas are suddenly supplied to the carburetor and the source gas is supplied to the discharge pipe for the chamber after operating the carburetor, overshooting occurs in the carburetor, resulting in unstable vaporization efficiency. There is a problem in that the thickness uniformity of the thin film of the substrate and the step coverage are deteriorated by the source gas. After the source gas and/or carrier gas are flowed to the exhaust pipe for a certain period of time using the exhaust means, Closing the valve of the discharge pipe for the opening and opening the discharge pipe for the chamber at the same time can significantly reduce the overshooting phenomenon in the vaporizer, and thereby improve the uniformity of the thickness of the thin film and the step coverage of the substrate by the supplied source gas. have.

In addition, a plurality of the flow control units may be provided to be connected to the plurality of vaporizers in a one-to-one manner, or one may be provided in common to all of the plurality of vaporizers.

The flow rate control unit is disposed upstream of the vaporizer and downstream of the source material storage unit 100. That is, the flow rate control unit is disposed between the vaporizer and the source material storage unit 100. The flow rate control unit is a part that adjusts the flow rate (ie, amount) of the source material to be supplied to each vaporizer or a plurality of vaporizers from the source material storage unit 100.

The vaporizer receives a source material whose flow rate is adjusted from the flow rate controller and vaporizes the source material into a source gas.

Specifically, the vaporizer converts the liquid source material into droplets through an atomizer provided in the upstream, and then heats the dropletized liquid source material through a heating unit provided in the vaporizer into source gas. Vaporize. The source gas vaporized by the vaporizer moves to the source gas supply pipe 511 and is supplied to the gas distribution plate 510.

The reaction chamber 500 includes a gas distribution plate 510 connected to the downstream of the vaporizer to inject the source gas into the reaction chamber 500, and a substrate S on which a thin film F is to be deposited. The substrate support part 520 on which it is seated, the heating means 530 for controlling the temperature inside the reaction chamber 500, and the residual gas in the reaction chamber 500 are discharged into the reaction chamber 500. It includes a discharging means (540). The gas distribution plate 510, the substrate support 520, the heating means 530, and the discharge means 540 included in the reaction chamber 500 are all controlled by a control unit.

Here, the gas distribution plate 510 is connected to the vaporization unit 200 through at least one source gas supply pipe 511 and vaporizes in the vaporization unit 200 through the at least one source gas supply pipe 511 The source gas is injected into the reaction chamber 500.

The reaction gas supply unit 300 is provided upstream of the gas distribution plate 510 and supplies a reaction gas that forms a thin film F by reacting with the source layer formed by adsorbing the source gas on the substrate S. The reaction gas supply unit 300 controls supply and cut off of the reaction gas according to a control signal from the control unit.

The purge gas supply unit 400 is connected upstream of the gas distribution plate 510 and supplies a purge gas for removing gas and foreign substances remaining in the reaction chamber 500. The purge gas is made of an inert gas, for example, may be made of argon gas. The purge gas supply unit 400 controls the supply of the purge gas and the supply of the purge gas according to a control signal from the control unit.

In the following, with reference to FIGS. 3 to 6, the method in which the vaporization unit 200 is disposed between the gas distribution plate 510 (or the source gas supply pipe 511) and the source material storage unit 100 is more specific. It will be described as. According to the present invention, a plurality of vaporizers are provided in the vaporization unit 200, but hereinafter, for clarity of explanation, description will be made based on a case where the vaporization unit 200 includes two vaporizers.

As shown in FIG. 3, according to the first embodiment, the plurality of vaporizers are parallel to each other between one source gas supply pipe 511 and the source material storage unit 100 connected to the gas distribution plate 510. And the plurality of vaporizers are connected to respective flow control units through respective source material supply pipes 101 and 103 connected upstream of each of the plurality of vaporizers.

Specifically, a first flow rate control unit 213 and a second flow rate control unit 223 are connected in parallel to the downstream of the source material storage unit 100. A first vaporizer 211 is connected to the downstream of the first flow control unit 213 through a single source material supply pipe 101, and the first flow control unit 213 is connected to the first vaporizer 211. Adjust the flow rate of the source material to be supplied. In addition, a second vaporizer 221 is connected to a downstream of the second flow rate control unit 223 through another source material supply pipe 103, and the second flow rate control unit 223 is the second vaporizer ( Adjust the flow rate of the source material to be supplied to 221).

Further, the downstream of the first vaporizer 211 and the downstream of the second vaporizer 221 are connected to one source gas supply pipe 511 in a parallel manner. That is, the source gas vaporized in the first vaporizer 211 and the source gas vaporized in the second vaporizer 221 are combined in the one source gas supply pipe 511 and pass through the gas distribution plate 510 through the reaction chamber ( 500).

As shown in FIG. 4, according to the second embodiment, the plurality of vaporizers are in series between one source gas supply pipe 511 and the source material storage unit 100 connected to the gas distribution plate 510. And the plurality of vaporizers are connected to respective flow control units through respective source material supply pipes 101 and 103 connected to the upstream of each of the plurality of vaporizers, and the respective flow control units Is connected to

Specifically, a first flow rate control unit 213 and a second flow rate control unit 223 are respectively connected to the downstream of the source material storage unit 100.

A first vaporizer 211 is connected to the downstream of the first flow control unit 213, and the first flow control unit 213 controls the flow rate of the source material to be supplied to the first vaporizer 211, and one It is connected to the first vaporizer through the source material supply pipe 101 of. In addition, the upstream of the first vaporizer 211 is connected to a downstream of the first flow rate control unit 213 (ie, the one source material supply pipe 101) and a downstream of the second vaporizer 221. That is, the source material supplied from the first flow rate control unit 213 and the source gas supplied from the second vaporizer 221 are introduced into the first vaporizer 211 together.

In addition, a second vaporizer 221 is connected to the downstream of the second flow rate controller 223, and the second flow rate controller 223 controls the flow rate of the source material to be supplied to the second vaporizer 221, and , It is connected to the second vaporizer through the other source material supply pipe 103. In addition, the downstream of the second vaporizer 221 is connected to the upstream of the first vaporizer 211, and the source gas vaporized in the second vaporizer 221 passes through the first vaporizer 211 It is supplied to the source gas supply pipe 511.

And, the downstream of the first vaporizer 211 is connected to one source gas supply pipe 511. That is, the first vaporizer 211 receives the source gas vaporized in the second vaporizer 221 and then goes to the one source gas supply pipe 511 together with the source gas vaporized in the first vaporizer 211. It is supplied into the reaction chamber 500 through the gas distribution plate 510.

As shown in FIG. 5, according to the third embodiment, the upstream of the gas distribution plate 510 and the downstream of the plurality of vaporizers are respectively connected through a plurality of source gas supply pipes 511, and the plurality of vaporizers Is disposed in parallel between the gas distribution plate 510 and the source material storage unit 100, and the plurality of vaporizers are respectively source material supply pipes 101 and 103 connected to the upstream of the plurality of vaporizers. ) Through each flow control unit.

Specifically, downstream of the source material storage unit 100, a first flow rate control unit 213 and a second flow rate control unit 223 are connected in parallel to a downstream of the source material storage unit. A first vaporizer 211 is connected to the downstream of the first flow control unit 213 through a single source material supply pipe 101, and the first flow control unit 213 is connected to the first vaporizer 211. Adjust the flow rate of the source material to be supplied. In addition, a second vaporizer 221 is connected to a downstream of the second flow rate control unit 223 through another source material supply pipe 103, and the second flow rate control unit 223 is the second vaporizer ( Adjust the flow rate of the source material to be supplied to 221).

In addition, a first source gas supply pipe 511a is connected to a downstream of the first vaporizer 211, and the first source gas supply pipe 511a is connected to a gas distribution plate 510. Further, a second source gas supply pipe 511b is connected to a downstream of the second vaporizer 221, and the second source gas supply pipe 511b is connected to a gas distribution plate 510. That is, the source gas vaporized in the first vaporizer 211 is supplied into the reaction chamber 500 through the gas distribution plate 510 through the first source gas supply pipe 511a, and the second vaporizer 221 The source gas vaporized in) is supplied into the reaction chamber 500 through the gas distribution plate 510 through the second source gas supply pipe 511b.

As shown in FIG. 6, according to the fourth embodiment, the upstream of the gas distribution plate 510 and the downstream of the plurality of vaporizers are respectively connected through one source gas supply pipe 511, and the plurality of vaporizers Is disposed in parallel between the gas distribution plate 510 and the source material storage unit 100, and the plurality of vaporizers are respectively source material supply pipes 101 and 103 connected to the upstream of the plurality of vaporizers. ) Is connected to one flow control unit.

Specifically, one flow rate control unit is connected to the downstream of the source material storage unit 100.

A first source material supply pipe 101 and a second source material supply pipe 103 are connected to the downstream of the one flow control unit, and a first vaporizer 211 is connected to the downstream of the first source material supply pipe 101, , A second vaporizer 221 is connected to the downstream of the second source material supply pipe 103. That is, the first vaporizer 211 and the second vaporizer 221 are connected in parallel to the downstream of the one flow rate control unit. The one flow rate control unit adjusts the flow rate of the source material obtained by adding the flow rate of the source material to be supplied to the first vaporizer 211 and the flow rate of the source material to be supplied to the first vaporizer 211, and A source material is supplied to the second vaporizer 221.

Further, the downstream of the first vaporizer 211 and the downstream of the second vaporizer 221 are connected to one source gas supply pipe 511 in a parallel manner. That is, the source gas vaporized in the first vaporizer 211 and the source gas vaporized in the second vaporizer 221 are combined in the one source gas supply pipe 511 and pass through the gas distribution plate 510 through the reaction chamber ( 500).

Hereinafter, a control algorithm of a control unit that controls the vaporization unit 200 including the plurality of vaporizers and the at least one flow rate control unit will be described in detail. In this case, the control algorithm of the controller to be described later may be applied to the entire vaporization unit 200 according to the first to fourth embodiments described above.

The control unit controls the flow rate of each of the plurality of vaporizers or time-division control of each of the plurality of vaporizers.

As the first control algorithm of the control unit, the control unit, when executing a process of injecting a source gas into the reaction chamber 500 through the gas distribution plate 510, supplies a source material to all of the plurality of vaporizers The source gas storage unit and the vaporization unit 200 may be controlled so that the source gas formed in all of the plurality of vaporizers is supplied to the reaction chamber 500 by vaporizing the source material into the source gas in all of the four vaporizers.

Specifically, assuming that the vaporizer 200 is provided with two vaporizers (that is, the first vaporizer 211 and the second vaporizer 221), the control unit includes the first vaporizer 211 and the second vaporizer. (221) After controlling the flow rate control unit so that the source material is supplied to the whole, the control unit operates the entire first vaporizer 211 and the second vaporizer 221 to operate the first vaporizer 211 and the second vaporizer. The source material is vaporized as a source gas in the entire vaporizer 221. Thereafter, the control unit supplies the source gas vaporized in the entire first vaporizer 211 and the second vaporizer 221 into the reaction chamber 500 through the gas distribution plate 510 through the source gas supply pipe 511 The gas distribution plate 510 and the source gas supply pipe 511 are controlled to be able to be.

And, as the second control algorithm of the control unit, first, the control unit, when executing the process of injecting the source gas into the reaction chamber 500 through the gas distribution plate 510, the plurality of The source gas storage unit and the source gas storage unit and the source gas to supply the source material to all of the plurality of vaporizers to vaporize the source material into the source gas in the entire plurality of vaporizers to supply the source gas formed in the entire plurality of vaporizers to the reaction chamber (500). Controls the vaporization unit 200. Thereafter, the control unit vaporizes the source material as a source gas only in some of the plurality of vaporizers during a predetermined second injection time immediately after the predetermined first injection time, so that the source gas formed in the partial vaporizer reacts. The source gas storage unit and the vaporization unit 200 are controlled to be supplied to the chamber 500.

Specifically, assuming that the vaporizer 200 includes two vaporizers (that is, the first vaporizer 211 and the second vaporizer 221), the control unit is configured to perform the first vaporizer during a predetermined first injection time. After controlling the flow rate controller so that the source material is supplied to the entire 211 and the second vaporizer 221, the entire first vaporizer 211 and the second vaporizer 221 are operated during the preset first injection time. By operating, the source material is vaporized as a source gas in the entire first vaporizer 211 and the second vaporizer 221 during the predetermined first injection time. Thereafter, the control unit passes the source gas vaporized in all of the first vaporizer 211 and the second vaporizer 221 during the preset first injection time through the gas distribution plate 510 through the source gas supply pipe 511. The gas distribution plate 510 and the source gas supply pipe 511 are controlled to be supplied into the reaction chamber 500.

Thereafter, when the preset first injection time ends, the control unit controls the flow rate control unit so that the source material is supplied only to the first vaporizer 211 during a preset second injection time, and then the preset second injection time During the period, only the first vaporizer 211 is operated to vaporize the source material into the source gas only in the first vaporizer 211 during the predetermined second injection time. Thereafter, the control unit supplies the source gas vaporized in the first vaporizer 211 during the preset second injection time to the inside of the reaction chamber 500 through the gas distribution plate 510 through the source gas supply pipe 511. The gas distribution plate 510 and the source gas supply pipe 511 are controlled so as to be performed.

That is, the control unit operates both the first vaporizer 211 and the second vaporizer 221 during the preset first injection time, and the first vaporizer during the preset second injection time after the preset first injection time ends. Operate only (211).

Of course, it is natural that the control unit may operate only the second vaporizer 221 instead of the first vaporizer 211 during the preset second injection time.

And, as a third control algorithm of the control unit, the control unit, when executing a process of injecting a source gas into the reaction chamber 500 through the gas distribution plate 510, the plurality of vaporizers for a predetermined first injection time The source gas storage unit and the vaporization so that the source material is supplied to only some of the vaporizers, and the source gas formed in the partial vaporizers is supplied to the reaction chamber 500 by vaporizing the source material as a source gas. After controlling the unit 200, the source material is vaporized as a source gas only in the other part of the plurality of vaporizers during a preset second injection time immediately after the preset first injection time. The source gas storage unit and the vaporization unit 200 may be controlled so that the source gas formed in the vaporizer is supplied to the reaction chamber 500.

Specifically, assuming that the vaporizer 200 includes two vaporizers (that is, the first vaporizer 211 and the second vaporizer 221), the control unit is configured to perform the first vaporizer during a predetermined first injection time. After controlling the flow rate control unit so that the source material is supplied only to (211), only the first vaporizer 211 is operated during the preset first injection time so that only the first vaporizer 211 during the preset first injection time. The source material is vaporized into a source gas. Thereafter, the control unit supplies the source gas vaporized in the first vaporizer 211 during the preset first injection time to the inside of the reaction chamber 500 through the gas distribution plate 510 through the source gas supply pipe 511. The gas distribution plate 510 and the source gas supply pipe 511 are controlled so as to be performed.

Thereafter, when the preset first injection time ends, the control unit controls the flow rate control unit so that the source material is supplied only to the second vaporizer 221 during a preset second injection time, and then the preset second injection time During the second vaporizer 221, only the second vaporizer 221 is operated to vaporize the source material into the source gas only in the second vaporizer 221 during the predetermined second injection time. Thereafter, the control unit is configured to supply the source gas vaporized in the second vaporizer 221 during the preset second injection time through the gas distribution plate 510 through the source gas supply pipe 511 into the reaction chamber 500. The gas distribution plate 510 and the source gas supply pipe 511 are controlled so as to be performed.

That is, the control unit operates only the first vaporizer 211 during the preset first injection time, and operates only the second vaporizer 221 during the preset second injection time after the preset first injection time ends.

Of course, it is natural that the control unit may operate only the second vaporizer 221 during the preset first injection time and only the first vaporizer 211 during the preset second injection time.

Preferably, in the above-described embodiments, the first vaporizer and the second vaporizer may be vaporizers having the same maximum vaporization capacity or may be vaporizers having different maximum vaporization capacity. At this time, when the maximum vaporization capacity of one of the first vaporizer and the second vaporizer is larger than the maximum vaporization capacity of the other other vaporizer, the control unit sets the one vaporizer to the main vaporizer and the other vaporizer. The vaporization unit can be controlled by using as a sub vaporizer.

As described above, by dividing one injection time into two injection times, only some of the vaporizers are operated during the preset first injection time, and only the other part of the vaporizer is operated during the preset second injection time, and/or one By dividing the injection time of the carburetor into two injection times and stopping the operation of some of the carburetors during the preset second injection time, it is possible to prevent overloading the carburetor by continuously operating only one carburetor as in the prior art. In addition, as in the prior art, only one vaporizer is continuously operated so that vaporization efficiency decreases in the second half of the injection time, so that the unvaporized source material (for example, a semi-liquid source gas or a liquid source material) is passed through the gas distribution plate 510. By flowing into the reaction chamber 500, the quality of the thin film F of the substrate S may be prevented from deteriorating.

And, as a third control algorithm of the control unit, the control unit sets some of the plurality of carburetors as the main vaporization unit G1, and the other part of the plurality of carburetors is a sub vaporization unit G2. Set to That is, the control unit groups a plurality of vaporizers included in the vaporization unit 200 into two groups so as to operate in the same manner for each group.

Thereafter, the control unit includes the main vaporization unit G1 and the sub vaporization unit G2 to additionally operate the sub vaporization unit G2 when the vaporization capacity of the main vaporization unit G1 is reduced than the usual vaporization capacity. Control.

That is, the control unit detects and records the vaporization capacity of the main vaporization unit G1 in normal times, and then the vaporization capacity is detected and recorded during the operation of the main vaporization unit G1 each time the main vaporization unit G1 is operated. When it is determined that it is lower than the vaporization capacity of the main vaporization unit G1, the main vaporization unit G1 and the sub vaporization unit G2 are both operated to supplement the vaporization capacity of the main vaporization unit G1. Accordingly, the control unit can prevent the vaporization capacity from being lowered by operating the sub vaporization unit G2 even if some vaporizers are fixed, so that a uniform and large amount of source gas is continuously supplied into the reaction chamber 500. You can do it. In the present invention, even if the carburetor is broken, it is not necessary to stop the entire thin film (F) deposition process for repair of the carburetor, so it is possible to prevent an increase in down time.

Hereinafter, a thin film deposition method (S2000) of depositing a thin film (F) on a substrate (S) using the thin film deposition apparatus 1000 described above will be described in more detail.

7 is a schematic flowchart of a thin film deposition method (S2000) according to an embodiment of the present invention, FIG. 8A is a signal graph showing a thin film deposition method according to the first embodiment of the present invention, and FIG. 8B is A signal graph showing a thin film deposition method according to a second embodiment of the present invention, FIG. 8C is a signal graph showing a thin film deposition method according to a third embodiment of the present invention, and FIG. 8D is a signal graph showing the thin film deposition method according to the third embodiment of the present invention. A signal graph showing a thin film deposition method, FIG. 8E is a signal graph showing a thin film deposition method according to a fifth embodiment of the present invention, and FIG. 8F is a signal graph showing a thin film deposition method according to a sixth embodiment of the present invention. , FIG. 8G is a signal graph showing a thin film deposition method according to a seventh embodiment of the present invention, and FIG. 8H is a signal graph showing a thin film deposition method according to an eighth embodiment of the present invention.

As shown in Figure 7, the thin film deposition method (S2000) according to the present invention, a first high temperature step (S2100), a source gas injection step (S2200), a first purge gas injection step (S2300), a second high temperature step (S2400), a reaction gas supply step (S2500), and a second purge gas injection step (S2600).

First, the control unit raises the temperature inside the reaction chamber 500 to a temperature at which the source gas can be adsorbed on the substrate S.

Thereafter, the controller injects the source gas into the reaction chamber 500 through the gas distribution plate 510. Here, in the supplying of the source gas, after supplying the source material to a plurality of vaporizers through at least one flow rate control unit in the source material storage unit 100, the plurality of vaporizers are operated to convert the source material into a gaseous source gas. It is carried out to vaporize to.

Thereafter, the control unit purges to remove the source gas and foreign matter remaining in the reaction chamber 500 (that is, foreign matter generated in the process of adsorbing the source gas to the surface of the substrate S, for example, particles, etc.). Gas is injected into the reaction chamber 500. Thereafter, the control unit operates the discharge means 540 provided at one side of the reaction chamber 500 to discharge the purge gas, the source gas, and foreign substances to the outside of the reaction chamber 500 together.

Thereafter, the control unit re-raises the temperature inside the reaction chamber 500 so that the source gas adsorbed on the surface of the substrate S reacts with the reaction gas.

Thereafter, the control unit injects a reaction gas into the reaction chamber 500 through the gas distribution plate 510 to react the reaction gas with the source gas adsorbed on the surface of the substrate S to form a thin film F. do.

Thereafter, the control unit includes the reaction gas and foreign substances remaining in the reaction chamber 500 (that is, foreign substances, such as particles, etc., generated in the chemical reaction process between the source gas and the reaction gas adsorbed on the surface of the substrate S). In order to remove ), a purge gas is injected into the reaction chamber 500. Thereafter, the control unit operates the discharge means 540 provided at one side of the reaction chamber 500 to discharge the purge gas, the source gas, and foreign substances to the outside of the reaction chamber 500 together.

The above-described source gas supply step according to the present invention may be implemented in various embodiments as shown in FIGS. 8A to 8C. For reference, for clarity of description, in FIGS. 8A to 8C, the vaporizer 200 includes two vaporizers (that is, a first vaporizer 211 indicated as'Source1' in the drawing and a second vaporizer 211 indicated as'Source2'. It is shown on the assumption that it includes a vaporizer 221.

Referring to FIG. 8A, like the first control algorithm of the control unit described above, in the step of supplying a source gas according to the first embodiment, the source material is supplied to all of the plurality of carburetors to supply the source material to all of the plurality of carburetors. It is performed so that the source gas formed in the entire plurality of vaporizers by vaporizing it with a source gas is supplied to the reaction chamber 500.

For example, it is assumed that the vaporization unit includes a first vaporizer and a second vaporizer. In this case, the control unit supplies a source material to each of the first vaporizer and the second vaporizer during a source gas injection period in which the source gas is injected into the reaction chamber, so that the source is supplied from each of the first vaporizer and the second vaporizer. The source gas storage unit and the vaporization unit may be controlled so that the source gas formed in the first vaporizer and the second vaporizer is supplied to the reaction chamber by vaporizing a material into a source gas. That is, during the source gas injection period, the controller drives both the first vaporizer and the second vaporizer, and specifically, during the source gas injection period, the first vaporizer is sourced at a predetermined first vaporization capacity (c1). Gas is generated, and at the same time, during the source gas injection period, the second vaporizer may also generate the source gas at the preset first vaporization capacity c1.

As a further embodiment of FIG. 8A, referring to FIG. 8B, the control unit divides the source gas injection period into a preset first injection time and a preset second injection time, and then, during the preset first injection time. The second vaporizer generates a source gas as much as a preset first vaporization capacity (c1), and at the same time, a preset second vaporization larger than the preset first vaporization capacity (c1) in the first vaporizer during the preset first injection time. The source gas storage unit and the vaporization unit are controlled to vaporize the source material into a source gas by a capacity (c2). Thereafter, the control unit generates a source gas equal to the preset second vaporization capacity in the second vaporizer during a second injection time other than the preset first injection time, and the preset second injection time in the first vaporizer. The source gas storage unit and the vaporization unit may be controlled to vaporize the source material into a source gas by 1 vaporization capacity (c1). Of course, in the above-described embodiment, the order of the first vaporizer and the second vaporizer may be changed and executed.

According to the control algorithm shown in FIG. 8B, during the source gas injection time, as a whole, the average vaporization capacity of the preset first vaporization capacity c1 and the preset second vaporization capacity c2 (this is the preset first vaporization capacity). It is possible to generate a source gas as much as the capacity (which is larger than the capacity c1) and supply it into the reaction chamber, thereby stably supplying the source gas with a larger flow rate into the reaction chamber.

Referring to FIG. 8C, similar to the second control algorithm of the control unit described above, in the supplying of the source gas according to the second embodiment, the source material is supplied to the source gas by operating all of the plurality of vaporizers for a predetermined first injection time. A first supply step of supplying the source gas formed in the entire plurality of vaporizers to the reaction chamber 500 after vaporizing with, and during a second predetermined injection time immediately after the predetermined first injection time, among the plurality of vaporizers It is executed to include a second supply step of supplying the source gas formed in the partial vaporizer to the reaction chamber 500 after vaporizing the source material into a source gas by operating only a portion of the vaporizer.

For example, it is assumed that the vaporization unit includes a first vaporizer and a second vaporizer. At this time, the control unit supplies a source material to the first vaporizer and the second vaporizer during a source gas injection period in which the source gas is injected into the reaction chamber, during a first injection time preset during the source gas injection period. Control the source gas storage unit and the vaporization unit so that the source gas formed in the first vaporizer and the second vaporizer is supplied to the reaction chamber by vaporizing the source material into a source gas in each of the first vaporizer and the second vaporizer. And, during the second injection time other than the preset first injection time during the source gas injection period, only one of the first vaporizer and the second vaporizer vaporizes the source material into a source gas, The source gas storage unit and the vaporization unit may be controlled so that the source gas formed in the vaporizer of is supplied to the reaction chamber.

In this embodiment, the controller may divide the source gas injection period into the preset first injection time executed first and the preset second injection time executed later. That is, the preset first injection time is a time period before the preset second injection time. In other words, the control unit generates source gas by driving both the first vaporizer and the second vaporizer during the preset first injection time, and one of the first vaporizer and the second vaporizer during the preset second injection time. Only the carburetor of is driven to generate the source gas.

As a further embodiment of FIG. 8C, referring to FIG. 8D, the control unit includes: a part of the preset second injection time, which is executed first in the source gas injection period, and the preset second injection time. The predetermined first injection time executed immediately after a portion may be divided into a remaining part of the preset second injection time executed immediately after the predetermined first injection time. That is, the preset first injection time is disposed between the preset second injection time in the source gas injection period. In other words, the control unit first generates a source gas by operating only one of the first vaporizer and the second vaporizer for a portion of the preset second injection time executed first, and then the preset first injection time. During the period, the first vaporizer and the second vaporizer are entirely operated to generate the source gas, and then only the one vaporizer is operated again for the remaining part of the second injection time to generate the source gas.

As a further embodiment of FIG. 8C, referring to FIG. 8E, the control unit divides the source gas injection period into the preset second injection time executed first and the preset first injection time executed later. That is, the preset second injection time is a time period before the preset first injection time. In other words, the controller generates source gas by driving only one of the first vaporizer and the second vaporizer during the preset second injection time, and then the first vaporizer and the first vaporizer during the preset first injection time. 2 Drive the entire carburetor to generate source gas.

As a further embodiment of FIG. 8C, referring to FIG. 8F, the control unit may divide the source gas injection period into the preset first injection time executed first and the preset second injection time executed later, The control unit vaporizes the source material into a source gas by a predetermined first vaporization capacity (c1) in each of the first vaporizer and the second vaporizer during the predetermined first injection time, and then the predetermined second injection. A preset second vaporization capacity greater than the preset first vaporization capacity (c1) only in the one of the first vaporizer and the second vaporizer (for example, only the first vaporizer as in FIG. 8F) for a period of time The source gas storage unit and the vaporization unit may be controlled so as to vaporize the source material into the source gas by (c2). That is, the control unit operates the entire first vaporizer and the second vaporizer as much as the preset first vaporization capacity (c1) during the preset first injection time, and then during the preset second injection time. Only the first carburetor is operated by the preset second vaporization capacity (c2) and the second carburetor is stopped.

As described above with respect to FIGS. 8C to 8F, all of the plurality of carburetors (eg, the first carburetor and the second carburetor) are operated during the entire source gas injection period, and some carburetors (eg. For example, by operating only the first carburetor) and stopping the remaining part of the carburetor (eg, the second carburetor), the remaining part of the carburetor (eg, the second carburetor) is maintained at rest for a certain period of time. The driving life of the carburetor may be improved, and the part of the carburetor (for example, the first carburetor) and the remaining part of the carburetor (eg, the second carburetor) are alternately switched to a rest state for a preset second injection time Can be maintained, it is possible to improve the driving life of the entire plurality of carburetor.

Referring to FIG. 8G, similar to the third control algorithm of the control unit described above, in the source gas supply step according to the third embodiment, only some of the plurality of vaporizers are operated during a preset first injection time to A first supply step of supplying the source gas formed in the part of the vaporizer to the reaction chamber 500 after evaporating with a source gas, and during a second predetermined injection time immediately after the predetermined first injection time. It is performed to include a second supply step of supplying the source gas formed in the other part of the vaporizer to the reaction chamber 500 after vaporizing the source material into a source gas by operating only the other part of the vaporizer.

For example, it is assumed that the vaporization unit includes a first vaporizer and a second vaporizer. In this case, the controller may divide the source gas injection period into a preset first injection time and a preset second injection time. Thereafter, the control unit supplies a source material to the first vaporizer during the preset first injection time to vaporize the source material into a source gas in the first vaporizer, so that the source gas formed in the first vaporizer is converted into the reaction chamber. After controlling the source gas storage unit and the vaporization unit to be supplied to the second vaporizer, the second vaporizer vaporizes the source material into the source gas for a second predetermined injection time except for the predetermined first injection time. The source gas storage unit and the vaporization unit may be controlled so that the source gas formed in the vaporizer is supplied to the reaction chamber. Of course, the order of operation of the first vaporizer and the second vaporizer may be changed, and the preset second injection time may precede or follow the preset first injection time.

As a further embodiment of FIG. 8G, as shown in FIG. 8H, the control unit is configured to vaporize the source material into a source gas by a predetermined second vaporization capacity in the first vaporizer during the predetermined first injection time. And the source gas storage unit to vaporize the source material into a source gas by a preset first vaporization capacity (c1) smaller than the preset second vaporization capacity in the second vaporizer during the preset second injection time, and It is possible to control the vaporization unit.

As described above with respect to FIGS. 8G and 8H, by dividing the source gas injection time into two time zones and dividing a plurality of carburetors into two groups, driving only carburetors belonging to one group in one time zone, As the carburetors belonging to the group can maintain a dormant state in one time zone, as a result, the driving life of the entire carburetor can be improved. Not only can the drive life be reduced, but it can be driven close to the maximum evaporation capacity, thereby increasing the supply flow rate of the source gas.

Preferably, before the source gas supply step, the thin film deposition method (S2000) further includes a vaporizer setting step. That is, before the source gas supply step, the control unit sets some of the plurality of carburetors to the main vaporization unit G1, and sets the other carburetors of the plurality of carburetors to the sub vaporization unit G2. .

At this time, in the source gas supply step, when the vaporization capacity of the main vaporization unit G1 is the same as the usual preset vaporization capacity, only the main vaporization unit G1 is operated to vaporize the source material into a source gas, and then the When the source gas is supplied to the reaction chamber 500 and the vaporization capacity of the main vaporization unit G1 is reduced than the usual preset vaporization capacity, the sub vaporization unit G2 is additionally operated to provide the source gas. It is executed to supply additionally to the reaction chamber 500.

Preferably, when the vaporization capacity of the main vaporization unit G1 among the remaining other part of the vaporizer is reduced than the usual preset vaporization capacity, the total vaporization capacity of the plurality of vaporizers is greater than or equal to the preset vaporization capacity. It is possible to determine the number of additionally operated carburetors to be.

9A and 9B are schematic partial enlarged cross-sectional views of the substrate S showing the state of the thin film F deposited by the prior art and the thin film F extension apparatus according to the present invention.

In general, step coverage is evaluated as the ratio of the thickness (t2) of the thin film (F) deposited on the sidewall of the trench to the thickness (t1) of the thin film (F) deposited on the surface of the substrate (S). do.

As shown in FIG. 9A, in the case of depositing a thin film F on the substrate S using a thin film deposition apparatus according to the prior art using only one vaporizer, a sufficient amount of source gas is stable inside the reaction chamber. Since it is not supplied to the trench, a sufficient amount of source gas cannot be stably supplied to the inside of the trench. As a result, the thickness t2 of the thin film F deposited on the sidewall of the trench is very small, and the step coverage is very low. In addition, as shown in FIG. 9A, in the prior art, the thickness t2 of the thin film F deposited on the sidewall of the trench is not uniform overall due to the unstable flow rate of the source gas, so the thickness of the thin film F is very thin. Parts (refer to D1, D2, and D3) are inevitably present, and there is a high probability of current leakage or substrate S defects such as short circuits due to these thin parts.

As shown in FIG. 9B, in the case of depositing a thin film F on the substrate S using the thin film deposition apparatus 1000 according to the present invention using a plurality of vaporizers, the inside of the reaction chamber 500 is sufficient. Since a large amount of source gas is stably supplied, a sufficient amount of source gas can be stably supplied into the trench, and due to this, the thickness (t2') of the thin film (F) deposited on the sidewall of the trench can be sufficiently secured. In addition, as shown in FIG. 9B, according to the present invention, the thickness t2' of the thin film F deposited on the sidewall of the trench is uniformly uniform due to the stable flow rate of the source gas. It may be formed, and thus, there is no portion of the thin film F having a very thin thickness, so that a current leakage or a defect rate of the substrate S such as a short circuit can be significantly reduced.

According to the above-described problem solving means, the present invention uses a plurality of vaporizers to supply source gas to the reaction chamber, thereby securing a large amount of the supply flow rate of the source gas supplied into the reaction chamber, and at the same time supplying the source gas to the reaction chamber. The gas supply flow rate can be stably secured. For this reason, the present invention can significantly improve the step coverage of the thin film deposited on the substrate, and the invention can deposit a thin film having excellent step coverage in the trench even though a trench having a large aspect ratio is formed on the substrate. .

In addition, the present invention can secure a large amount of the supply flow rate of the source gas supplied into the reaction chamber by using a plurality of vaporizers, it is possible to produce more efficient and stable source gas than increasing the vaporization capacity of one vaporizer. A thin film having excellent step coverage can be deposited in the trench. This is because the use of two vaporizers with a vaporization capacity of 100 is more economical and superior step coverage can be obtained than using one vaporizer with a vaporization capacity of 200. Specifically, in the case of a carburetor with a vaporization capacity of 200, it is because in general, all devices are limited to operate up to 100% of their capacity. Even if they operate up to 100% of their capacity, the maximum capacity is maintained. This is because the life of the carburetor is remarkably reduced and the stability of vaporization is reduced. In addition, there is a problem that the cost is very high in the case of a high-performance carburetor having a vaporization capacity of about twice that of a general carburetor. Therefore, by producing a large amount of source gas using a plurality of vaporizers as in the present invention, it is possible to improve the life of the vaporizer while using a low-cost general vaporizer, and because 100% of its capacity is not operated, a stable and efficient source Gas can be produced, and as a result, a thin film having excellent step coverage can be deposited.

In addition, according to the present invention, by setting and operating a plurality of vaporizers as a main part and a sub part, it is possible to prevent the entire thin film deposition process from being stopped due to failure of some vaporizers. Accordingly, in the present invention, the thin film deposition process can be continuously executed, and maintenance work for some of the broken carburetors can be performed while maintaining the throughput of the thin film deposition process.

Although shown and described in specific embodiments to illustrate the technical idea of the present invention, the present invention is not limited to the same configuration and operation as the specific embodiment as described above, and various modifications are within the scope of the present invention. Can be carried out in Therefore, such modifications should be regarded as belonging to the scope of the present invention, and the scope of the present invention should be determined by the claims to be described later.

1000: thin film deposition device
100: source material storage unit
200: vaporizer
300: reaction gas supply
400: purge gas supply unit
500: reaction chamber
510: gas distribution plate
520: substrate support
530: heating means
540: discharge means
600: control unit

Claims (25)

A source material storage unit for storing a liquid source material;
A vaporization unit connected to the source material storage unit and vaporizing a liquid source material of the same component supplied from the source material storage unit into a gaseous source gas; And
Including; a reaction chamber connected to the downstream of the vaporization unit,
The vaporization unit includes a plurality of vaporizers that supply the source gas into the reaction chamber through at least one source gas supply pipe and are disposed in parallel between the reaction chamber and the source material storage unit. Evaporation equipment. The method of claim 1,
The plurality of vaporizers, thin film deposition apparatus comprising a first vaporizer and a second vaporizer having different maximum vaporization capacity from each other. The method of claim 1,
The plurality of vaporizers are connected to each of a plurality of flow control units for adjusting the flow rate of the source material,
Thin film deposition apparatus, characterized in that the plurality of vaporizers are connected to one source gas supply pipe. The method of claim 1,
The plurality of vaporizers are connected to each of a plurality of flow control units for adjusting the flow rate of the source material,
Thin film deposition apparatus, characterized in that the plurality of vaporizers are connected to each of a plurality of source gas supply pipes. The method of claim 1,
The plurality of vaporizers are connected to one flow control unit for adjusting the flow rate of the source material,
Thin film deposition apparatus, characterized in that the plurality of vaporizers are connected to one source gas supply pipe. The method of claim 1,
The vaporization unit,
A discharge pipe for a chamber disposed between the vaporizer and the source gas supply pipe;
Exhaust means for discharging the source gas to the outside; And
Further comprising; an exhaust discharge pipe branched from the discharge pipe for the chamber and connected to the exhaust means,
The vaporization unit, while the source gas is supplied into the reaction chamber through the discharge pipe for the chamber, to open the discharge pipe for the exhaust for a predetermined time. The method of claim 1,
The thin film deposition apparatus further includes a control unit for controlling the vaporization unit,
The vaporization unit includes a first vaporizer and a second vaporizer,
And the control unit controls the vaporization unit to supply the source gas formed in the first vaporizer and the second vaporizer to the reaction chamber during a predetermined source gas injection period. delete A source material storage unit for storing a liquid source material;
A vaporization unit connected to the source material storage unit including a first vaporizer and a second vaporizer to receive the liquid source material and vaporize it into a gaseous source gas;
A reaction chamber connected downstream of the vaporizer to receive a gaseous source gas from at least one of the first vaporizer and the second vaporizer; And
And a control unit for time-division control of the vaporization unit,
The control unit controls the vaporization unit to supply the source gas formed in the first vaporizer to the reaction chamber during a predetermined first injection time during a predetermined source gas injection period, and a preset second injection during the source gas injection period. And controlling the vaporization unit so that the source gas formed in the second vaporizer is supplied to the reaction chamber for a period of time. The method of claim 9,
The source gas injection period is a thin film deposition apparatus, characterized in that divided into the preset first injection time and the preset second injection time. delete delete delete delete delete The method of claim 1,
A thin film deposition apparatus, characterized in that some of the plurality of vaporizers are set as a main vaporizer, and the other vaporizers of the plurality of vaporizers are set as a sub vaporizer. delete A source gas supply step of injecting a source gas into the reaction chamber through a gas distribution plate;
A first purge gas injection step of injecting a purge gas into the reaction chamber to remove source gas and foreign substances remaining in the reaction chamber;
A reaction gas supply step of injecting a reaction gas into the reaction chamber through the gas distribution plate; And
Including a second purge gas injection step of injecting a purge gas into the reaction chamber to remove the reaction gas and foreign substances remaining in the reaction chamber,
The source gas supply step is performed to vaporize a liquid source material of the same component supplied from the source material storage unit into a gaseous source gas by operating a plurality of vaporizers arranged in parallel. The method of claim 18,
Wherein the plurality of vaporizers are disposed in parallel between the gas distribution plate and the source material storage unit. delete delete delete delete delete delete

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