KR102208100B1 - Conductive paste, touch panel, and method for producing conductive pattern - Google Patents
Conductive paste, touch panel, and method for producing conductive pattern Download PDFInfo
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- KR102208100B1 KR102208100B1 KR1020167028789A KR20167028789A KR102208100B1 KR 102208100 B1 KR102208100 B1 KR 102208100B1 KR 1020167028789 A KR1020167028789 A KR 1020167028789A KR 20167028789 A KR20167028789 A KR 20167028789A KR 102208100 B1 KR102208100 B1 KR 102208100B1
- Authority
- KR
- South Korea
- Prior art keywords
- conductive paste
- conductive pattern
- compound
- conductive
- pattern
- Prior art date
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
- H05K1/095—Dispersed materials, e.g. conductive pastes or inks for polymer thick films, i.e. having a permanent organic polymeric binder
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3485—Applying solder paste, slurry or powder
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/001—Conductive additives
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/04—Carbon
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/032—Materials
- H05K2201/0323—Carbon
Abstract
본 발명은 고습 고열 등의 환경 하에 있어서도 접촉저항을 안정적으로 유지 가능하고, 또한 투명전극과의 접속 신뢰성이 높은, 미세한 도전 패턴을 제조하는 것이 가능한 도전 페이스트를 제공하는 것을 목적으로 한다. 본 발명은 금속 입자(A), 카본 입자(B), 불포화 이중결합을 갖는 화합물(C), 광중합 개시제(D), 및 용제(E)를 함유하고, 상기 카본 입자(B)에 대한 상기 금속 입자(A)의 질량비가 20∼1900인 도전 페이스트를 제공한다.An object of the present invention is to provide a conductive paste capable of stably maintaining contact resistance even in environments such as high humidity, high heat, and capable of producing a fine conductive pattern with high connection reliability with a transparent electrode. The present invention contains a metal particle (A), a carbon particle (B), a compound having an unsaturated double bond (C), a photopolymerization initiator (D), and a solvent (E), and contains the metal for the carbon particle (B). A conductive paste having a mass ratio of particles (A) of 20 to 1900 is provided.
Description
본 발명은 도전 페이스트 및 도전 패턴의 제조방법에 관한 것이다.The present invention relates to a method of manufacturing a conductive paste and a conductive pattern.
최근, 포토리소그래피법쪽에 의해 미세한 도전 패턴을 제조하는 것이 가능한, 유기 성분에 도전 필러를 분산시킨 도전 페이스트가 개발되어 있고(특허문헌 1 및 2), 그 중에서도 ITO 등의 투명전극과의 접속 신뢰성이 높은 것을 특징으로 하는 도전 페이스트가 개발되어 있다(특허문헌 1).In recent years, a conductive paste in which a conductive filler is dispersed in an organic component has been developed that can produce a fine conductive pattern by a photolithography method (Patent Documents 1 and 2), and among them, connection reliability with transparent electrodes such as ITO is improved. A conductive paste characterized by being high has been developed (Patent Document 1).
그러나, 종래의 도전 페이스트를 이용하여 제조한 터치패널의 주위배선과 같은 도전 패턴에 있어서는, 고온 등의 열적 스트레스나 습도변화에 의해 도전 패턴과 ITO 등의 투명전극의 접촉면에 생기는 전기저항 즉 접촉저항이 높아질 경우가 있는 것이 문제시되고 있었다.However, in a conductive pattern such as a peripheral wiring of a touch panel manufactured using a conventional conductive paste, the electrical resistance generated on the contact surface between the conductive pattern and the transparent electrode such as ITO due to thermal stress such as high temperature or humidity change. It was a problem that this may increase.
그래서 본 발명은, 고습 고열 등의 환경변화를 거쳐도 접촉저항을 안정적으로 유지 가능하고, 또한 미세하며 비저항이 낮은 도전 패턴을 제조하는 것이 가능한 도전 페이스트를 제공하는 것을 목적으로 한다.Therefore, an object of the present invention is to provide a conductive paste capable of stably maintaining contact resistance even through environmental changes such as high humidity, high heat, and capable of producing a conductive pattern that is fine and has low specific resistance.
상기 과제를 해결하기 위해서, 본 발명은 이하의 (1)∼(6)에 기재한 도전 페이스트, 터치패널 및 도전 패턴의 제조방법을 제공한다.In order to solve the above problems, the present invention provides a method of manufacturing a conductive paste, a touch panel, and a conductive pattern described in the following (1) to (6).
(1) 금속 입자(A), 카본 입자(B), 불포화 이중결합을 갖는 화합물(C), 광중합 개시제(D), 및 용제(E)을 함유하고, 상기 카본 입자(B)에 대한 상기 금속 입자(A)의 질량비가 20∼1900인 도전 페이스트.(1) Metal particles (A), carbon particles (B), a compound having an unsaturated double bond (C), a photopolymerization initiator (D), and a solvent (E), and the metal for the carbon particles (B) A conductive paste in which the mass ratio of the particles (A) is 20 to 1900.
(2) 상기 광중합 개시제(D)로서 옥심에스테르계 화합물을 함유하는, 상기 (1)에 기재된 도전 페이스트.(2) The conductive paste according to (1), containing an oxime ester compound as the photopolymerization initiator (D).
(3) 상기 금속 입자(A)의 체적 평균 입자지름이 0.1∼10㎛이며, 또한 상기 카본 입자(B)의 1차 입자의 체적 평균 입자지름이 0.005∼0.5㎛인, 상기 (1) 또는 (2)에 기재된 도전 페이스트.(3) the volume average particle diameter of the metal particles (A) is 0.1 to 10 μm, and the volume average particle diameter of the primary particles of the carbon particles (B) is 0.005 to 0.5 μm, the above (1) or ( The conductive paste described in 2).
(4) 불포화 이중결합을 갖는 화합물(C)의 산가가 30∼250mgKOH/g인, 상기 (1)∼(3) 중 어느 하나에 기재된 도전 페이스트.(4) The conductive paste according to any one of (1) to (3), wherein the acid value of the compound (C) having an unsaturated double bond is 30 to 250 mgKOH/g.
(5) 상기 (1)∼(4) 중 어느 하나에 기재된 도전 페이스트로 형성된 도전 패턴과, ITO로 이루어지는 투명전극을 구비하고, 상기 투명전극과 상기 도전 패턴이 접속되어 있는 터치패널.(5) A touch panel comprising a conductive pattern formed of the conductive paste according to any one of the above (1) to (4) and a transparent electrode made of ITO, and the transparent electrode and the conductive pattern are connected.
(6) 상기 (1)∼(4) 중 어느 하나에 기재된 도전 페이스트를 기판 상에 도포하고, 건조하고, 노광하고, 현상한 후에, 100∼300℃에서 경화하는, 도전 패턴의 제조방법.(6) A method for producing a conductive pattern, wherein the conductive paste according to any one of (1) to (4) is applied on a substrate, dried, exposed, and developed, and then cured at 100 to 300°C.
(발명의 효과)(Effects of the Invention)
본 발명의 도전 페이스트에 의하면, 고습 고열 등의 환경변화를 거쳐도 접촉저항의 증가를 억제 가능하고, 또한 미세하고 비저항이 낮은 도전 패턴을 제조할 수 있다.According to the conductive paste of the present invention, an increase in contact resistance can be suppressed even through environmental changes such as high humidity, high heat, etc., and a fine conductive pattern with low specific resistance can be manufactured.
도 1은 실시예의 비저항 평가에 사용한 포토마스크의 투광 패턴을 나타낸 모식도이다.
도 2는 실시예의 ITO와의 접속 신뢰성 평가에 사용한 포토마스크의 투광 패턴을 나타낸 모식도이다.1 is a schematic diagram showing a light transmission pattern of a photomask used for specific resistance evaluation in Examples.
Fig. 2 is a schematic diagram showing a light-transmitting pattern of a photomask used for evaluation of the reliability of connection with ITO in Examples.
본 발명의 도전 페이스트는 금속 입자(A), 카본 입자(B), 불포화 이중결합을 갖는 화합물(C), 광중합 개시제(D), 및 용제(E)를 함유하고, 상기 카본 입자(B)에 대한 상기 금속 입자(A)의 질량비가 20∼1900인 것을 특징으로 한다.The conductive paste of the present invention contains metal particles (A), carbon particles (B), a compound having an unsaturated double bond (C), a photoinitiator (D), and a solvent (E), and contains the carbon particles (B). It is characterized in that the mass ratio of the metal particles (A) is 20 to 1900.
본 발명의 도전 페이스트에 의해 얻어진 도전 패턴은 유기성분과 무기성분의 복합물로 되어 있고, 금속 입자(A)끼리가 경화시의 경화 수축에 의해 서로 접촉함으로써 도전성이 발현되는 것이다.The conductive pattern obtained by the conductive paste of the present invention is made of a composite of an organic component and an inorganic component, and electrical conductivity is exhibited when metal particles (A) are brought into contact with each other due to curing shrinkage during curing.
본 발명의 도전 페이스트는 금속 입자(A)를 함유한다. 금속 입자(A)를 구성하는 금속으로서는 은(이하, 「Ag」), 금(이하, 「Au」), 구리, 백금, 납, 주석, 니켈, 알루미늄, 텅스텐, 몰리브덴, 크롬, 티타늄 혹은 인듐 또는 이들 금속의 합금을 들 수 있지만, 도전성의 관점으로부터 Ag, Au 또는 구리가 바람직하고, 비용 및 안정성의 관점으로부터 Ag이 보다 바람직하다.The conductive paste of the present invention contains metal particles (A). The metal constituting the metal particles (A) is silver (hereinafter, ``Ag''), gold (hereinafter, ``Au''), copper, platinum, lead, tin, nickel, aluminum, tungsten, molybdenum, chromium, titanium or indium, or Although alloys of these metals are mentioned, Ag, Au, or copper is preferable from the viewpoint of conductivity, and Ag is more preferable from the viewpoint of cost and stability.
본 발명자들은 소망의 도전 페이스트를 얻기 위해서 예의 검토를 거듭했다. 그리고, 카본 입자(B)에 착안했다. 지금까지 도전 페이스트 중의 금속 입자의 분산성을 높이거나, 도전성을 조정하기 위해서 카본 입자를 첨가하는 것이 알려져 있었다. 그러나, 그것을 위해서는 상당량의 카본 입자를 첨가하지 않으면 안되어 도전성이 떨어져 버리는, 즉 비저항이 높아져 버리는 것이었다.The inventors of the present invention repeated intensive examinations to obtain a desired conductive paste. And attention was paid to the carbon particle (B). Until now, it has been known to add carbon particles in order to increase the dispersibility of metal particles in a conductive paste or to adjust the conductivity. However, for that purpose, a considerable amount of carbon particles must be added, resulting in a decrease in conductivity, that is, an increase in specific resistance.
그래서 본 발명자들은, 카본 입자(B)에 대한 금속 입자(A)의 질량비에 착안했다. 그리고, 더욱 검토를 거듭하여, 소량의 카본 입자를 첨가함으로써 고습 고열 등의 환경변화를 거쳐도 접촉저항을 안정적으로 유지 가능하게 할 수 있는 것을 찾아냈다. 즉, 카본 입자(B)에 대한 금속 입자(A)의 질량비는 20∼1900인 것이 필요하고, 보다 바람직하게는 30∼1000이다.Therefore, the present inventors focused on the mass ratio of the metal particles (A) to the carbon particles (B). Further, further investigation was conducted, and it was found that by adding a small amount of carbon particles, the contact resistance can be stably maintained even through environmental changes such as high humidity, high heat, and the like. That is, the mass ratio of the metal particles (A) to the carbon particles (B) needs to be 20 to 1900, more preferably 30 to 1000.
금속 입자(A)의 질량비가 1900 이하이면, 카본 입자(B)와 투명전극의 접촉 확률이 향상되어, 제조된 도전 패턴과 투명전극의 접촉저항이 고습 고열의 환경변화를 거쳐도 안정적으로 낮은 상태이다. 한편으로, 금속 입자(A)의 질량비가 20 이상이면, 금속 입자(A)끼리의 접촉 확률이 향상되어, 제조된 도전 패턴의 비저항이 충분하게 낮아진다.If the mass ratio of the metal particles (A) is 1900 or less, the contact probability between the carbon particles (B) and the transparent electrode is improved, and the contact resistance between the manufactured conductive pattern and the transparent electrode is stably low even through environmental changes of high humidity and high heat. to be. On the other hand, when the mass ratio of the metal particles (A) is 20 or more, the probability of contact between the metal particles (A) is improved, and the specific resistance of the produced conductive pattern is sufficiently lowered.
금속 입자(A)의 체적 평균 입자지름은 0.1∼10㎛가 바람직하고, 0.5∼6㎛가 보다 바람직하다. 체적 평균 입자지름이 0.1㎛ 이상이면 경화 공정에서의 금속 입자(A)끼리의 접촉 확률이 향상되어, 제조된 도전 패턴의 비저항 및 단선확률이 낮아진다. 또한, 노광 공정에 있어서 노광광이 도전 페이스트를 도포해서 얻어진 도포막 중을 원활하게 투과할 수 있어 미세 패터닝이 용이하게 된다. 한편으로, 체적 평균 입자지름이 10㎛ 이하이면 제조된 도전 패턴의 표면 평활도, 패턴 정밀도 및 치수 정밀도가 향상된다. 또한, 금속 입자(A)의 체적 평균 입자지름은 콜터 카운터법에 의해 측정할 수 있다.The volume average particle diameter of the metal particles (A) is preferably 0.1 to 10 µm, more preferably 0.5 to 6 µm. When the volume average particle diameter is 0.1 µm or more, the probability of contact between the metal particles (A) in the curing step is improved, and the specific resistance and disconnection probability of the produced conductive pattern are lowered. In addition, in the exposure step, exposure light can smoothly pass through the coating film obtained by applying the conductive paste, thereby facilitating fine patterning. On the other hand, when the volume average particle diameter is 10 µm or less, the surface smoothness, pattern accuracy, and dimensional accuracy of the produced conductive pattern are improved. In addition, the volume average particle diameter of the metal particle (A) can be measured by the Coulter counter method.
금속 입자(A)의 첨가량은 도전 페이스트 중의 전체 고형분에 대하여 60∼95질량%가 바람직하다. 전체 고형분에 대한 첨가량이 60질량% 이상이면 경화시의 금속 입자(A)끼리의 접촉확률이 향상되고, 제조된 도전 패턴의 비저항 및 단선확률이 낮아진다. 한편으로, 전체 고형분에 대한 첨가량이 95질량% 이하이면 노광 공정에 있어서 노광광이, 도전 페이스트를 도포해서 얻어진 도포막 중을 보다 원활하게 투과할 수 있어 미세한 패터닝이 용이하게 된다. 여기에서 전체 고형분이란, 용제를 제외한 도전 페이스트의 전체 구성 성분을 말한다.The amount of the metal particles (A) added is preferably 60 to 95% by mass based on the total solid content in the conductive paste. When the addition amount to the total solid content is 60% by mass or more, the contact probability between the metal particles (A) during curing is improved, and the specific resistance and disconnection probability of the produced conductive pattern are lowered. On the other hand, when the addition amount to the total solid content is 95% by mass or less, exposure light in the exposure step can more smoothly pass through the coating film obtained by applying the conductive paste, thereby facilitating fine patterning. Here, the total solid content refers to all the constituent components of the conductive paste excluding the solvent.
본 발명의 도전 페이스트는 카본 입자(B)를 함유한다. 여기에서 카본 입자란, 입자 전체에 차지하는 탄소의 비율이 50질량% 이상인 입자를 말한다. 도전 페이스트 중에 포함되는 카본 입자는 투명전극 중에서도 특히 ITO와의 젖음성이 양호하기 때문에, 도전 페이스트와 ITO의 계면에 카본 입자가 모이고, 접촉점 수가 증대하여 도전 패스가 증가하므로, 고습 고열 등의 환경변화를 거쳐도 접촉저항을 안정적으로 유지 가능하게 한다고 하는 효과를 증대시킨다.The conductive paste of the present invention contains carbon particles (B). Here, the carbon particles refer to particles in which the proportion of carbon occupied by the entire particle is 50% by mass or more. Since the carbon particles contained in the conductive paste have particularly good wettability with ITO among the transparent electrodes, carbon particles collect at the interface between the conductive paste and ITO, and the number of contact points increases, thereby increasing the conductive path.Thus, through environmental changes such as high humidity, high heat, etc. Also, the effect of stably maintaining contact resistance is increased.
카본 입자(B)로서는, 예를 들면 MA77, 7, 8, 11, 100, 100R, 100S, 230, 14, 220 혹은 600 또는 #2650, 2600, 2350, 2300, 1000, 1000N, 980, 970, 960, 950, 900, 850, 750B, 650B, 52, 47, 45, 45L, 44, 40, 32, 30, 30L, 25, 20, 10, 5, 95, 85, 260, 4000B, 3030B, 3050B, 3230B 혹은 3400B(이상, 모두 미츠비시 카가쿠 가부시키갸이샤제), 토카블랙 #8500/F, 8300/F, 7550SB/F, 7400, 7360SB, 7350/F, 7270SB, 7100F, 7050, 5500, 4500, 4400, 4300, 3855, 3845 혹은 3800(이상, 모두 토카이 카본 가부시키가이샤제), 아사히 #78, 80, 70, 70L, 66, 65, 60HN, 60H, 60U, 60, 55, 50HG, 52, 51, 50U, 50, 35, 15HS, 15, 8 또는 아사히 F-200 혹은 AX-015 또는 아사히써멀(이상, 모두 아사히 카본 가부시키갸이샤제)을 들 수 있다.As the carbon particle (B), for example, MA77, 7, 8, 11, 100, 100R, 100S, 230, 14, 220 or 600 or #2650, 2600, 2350, 2300, 1000, 1000N, 980, 970, 960 , 950, 900, 850, 750B, 650B, 52, 47, 45, 45L, 44, 40, 32, 30, 30L, 25, 20, 10, 5, 95, 85, 260, 4000B, 3030B, 3050B, 3230B Or 3400B (above, all made by Mitsubishi Kagaku Corporation), Toka Black #8500/F, 8300/F, 7550SB/F, 7400, 7360SB, 7350/F, 7270SB, 7100F, 7050, 5500, 4500, 4400 , 4300, 3855, 3845 or 3800 (all above, all manufactured by Tokai Carbon Co., Ltd.), Asahi #78, 80, 70, 70L, 66, 65, 60HN, 60H, 60U, 60, 55, 50HG, 52, 51, 50U, 50, 35, 15HS, 15, 8 or Asahi F-200 or AX-015 or Asahi Thermal (above, all manufactured by Asahi Carbon Co., Ltd.) are mentioned.
카본 입자(B)의 1차 입자의 체적 평균 입자지름은 0.005∼0.5㎛가 바람직하다. 1차 입자의 체적 평균 입자지름이 0.005㎛ 이상이면 도전 페이스트 중에서의 분산성 및 분산 안정성이 보다 높아져서 응집물의 발생을 억제할 수 있다. 한편으로, 1차 입자의 체적 평균 입자지름이 0.5㎛를 초과하면 일정 질량당의 1차 입자수가 줄어들고, ITO, 은나노 와이어, 산화아연 또는 산화주석 등의 투명전극과의 접촉확률이 저하하여, 제조된 도전 패턴과 투명전극의 접촉저항이 높아져 버릴 경우가 있다. 또한, 카본 입자(B)의 1차 입자의 체적 평균 입자지름은 전자현미경을 이용하여 무작위로 선택한 100개의 1차 입자를 관찰하고, 각각의 1차 입자에 있어서의 최대 폭을 측정하고, 그것들의 평균값을 구함으로써 산출할 수 있다.The volume average particle diameter of the primary particles of the carbon particles (B) is preferably 0.005 to 0.5 µm. When the volume average particle diameter of the primary particles is 0.005 µm or more, dispersibility and dispersion stability in the conductive paste become higher, and generation of aggregates can be suppressed. On the other hand, when the volume average particle diameter of the primary particles exceeds 0.5 μm, the number of primary particles per certain mass decreases, and the contact probability with transparent electrodes such as ITO, silver nanowires, zinc oxide or tin oxide decreases, and the manufactured The contact resistance between the conductive pattern and the transparent electrode may increase. In addition, the volume average particle diameter of the primary particles of the carbon particles (B) is determined by observing 100 primary particles randomly selected using an electron microscope, measuring the maximum width of each primary particle, and It can be calculated by obtaining an average value.
카본 입자(B)의 첨가량은 도전 페이스트 중의 전체 고형분에 대하여 0.05∼3질량%가 바람직하고, 0.1∼2질량%가 보다 바람직하다. 전체 고형분에 대한 첨가량이 0.05질량% 이상이면, 카본 입자(B)와 투명전극의 접촉확률이 향상되어, 제조된 도전 패턴과 투명전극의 접촉저항이 고습 고열의 환경 하에 있어서도 안정적으로 낮아진다. 한편으로, 전체 고형분에 대한 첨가량이 3질량% 이하이면 노광 공정에 있어서 노광광이 도전 페이스트를 도포해서 얻어진 도포막 중을 원활하게 투과할 수 있어 미세한 패터닝이 용이하게 된다.The added amount of the carbon particles (B) is preferably 0.05 to 3% by mass, more preferably 0.1 to 2% by mass, based on the total solid content in the conductive paste. When the addition amount to the total solid content is 0.05% by mass or more, the contact probability between the carbon particles (B) and the transparent electrode is improved, and the contact resistance between the produced conductive pattern and the transparent electrode is stably lowered even in an environment of high humidity and high heat. On the other hand, when the addition amount to the total solid content is 3% by mass or less, exposure light can smoothly pass through the coating film obtained by applying the conductive paste in the exposure step, thereby facilitating fine patterning.
본 발명의 도전 페이스트는 불포화 이중결합을 갖는 화합물(C)을 함유한다. 불포화 이중결합을 갖는 화합물(C)로서는, 예를 들면 스티렌, p-메틸스티렌, o-메틸스티렌, m-메틸스티렌, α-메틸스티렌, 클로로메틸스티렌 또는 히드록시메틸스티렌 등의 스티렌류, 아크릴계 모노머, 1-비닐-2-피롤리돈, 아크릴계 공중합체 또는 에폭시카르복실레이트 화합물을 들 수 있다.The conductive paste of the present invention contains the compound (C) having an unsaturated double bond. Examples of the compound (C) having an unsaturated double bond include styrene, p-methylstyrene, o-methylstyrene, m-methylstyrene, α-methylstyrene, chloromethylstyrene or hydroxymethylstyrene, and acrylic A monomer, 1-vinyl-2-pyrrolidone, an acrylic copolymer, or an epoxy carboxylate compound.
아크릴계 모노머로서는, 예를 들면 아크릴산, 메틸아크릴레이트, 에틸아크릴레이트, 2-에틸헥실아크릴레이트, n-부틸아크릴레이트, iso-부틸아크릴레이트, iso-프로판아크릴레이트, 글리시딜아크릴레이트, 부톡시트리에틸렌글리콜아크릴레이트, 디시클로펜타닐아크릴레이트, 디시클로펜테닐아크릴레이트, 2-히드록시에틸아크릴레이트, 이소보닐아크릴레이트, 2-히드록시프로필아크릴레이트, 이소덱실아크릴레이트, 이소옥틸아크릴레이트, 라우릴아크릴레이트, 2-메톡시에틸아크릴레이트, 메톡시에틸렌글리콜아크릴레이트, 메톡시디에틸렌글리콜아크릴레이트, 옥타플루오로펜틸아크릴레이트, 페녹시에틸아크릴레이트, 스테아릴아크릴레이트, 트리플루오로에틸아크릴레이트, 아미노에틸아크릴레이트, 페닐아크릴레이트, 페녹시에틸아크릴레이트, 1-나프틸아크릴레이트, 2-나프틸아크릴레이트, 티오페놀아크릴레이트 혹은 벤질메르캅탄아크릴레이트, 알릴화 시클로헥실디아크릴레이트, 메톡시화 시클로헥실디아크릴레이트, 1,4-부탄디올디아크릴레이트, 1,3-부틸렌글리콜디아크릴레이트, 에틸렌글리콜디아크릴레이트, 디에틸렌글리콜디아크릴레이트, 트리에틸렌글리콜디아크릴레이트, 폴리에틸렌글리콜디아크릴레이트, 네오펜틸글리콜디아크릴레이트, 프로필렌글리콜디아크릴레이트, 폴리프로필렌글리콜디아크릴레이트 혹은 트리글리세롤디아크릴레이트, 트리메틸올프로판트리아크릴레이트, 디메틸올프로판 테트라아크릴레이트, 디펜타에리스리톨모노히드록시펜타아크릴레이트 혹은 디펜타에리스리톨헥사아크릴레이트, 아크릴아미드, N-메톡시메틸아크릴아미드, N-에톡시메틸아크릴아미드, N-n-부톡시메틸아크릴아미드 혹은 N-이소부톡시메틸아크릴아미드, 에폭시기를 불포화산으로 개환시킨 수산기를 갖는 에틸렌글리콜디글리시딜에테르의 아크릴산 부가물, 디에틸렌글리콜디글리시딜에테르의 아크릴산 부가물, 네오펜틸글리콜디글리시딜에테르의 아크릴산 부가물, 글리세린디글리시딜에테르의 아크릴산 부가물, 비스페놀A 디글리시딜에테르의 아크릴산 부가물, 비스페놀F의 아크릴산 부가물 혹은 크레졸노볼락의 아크릴산 부가물 등의 에폭시아크릴레이트 모노머 또는 γ-아크릴옥시프로필트리메톡시실란, 또는 그것들의 아크릴기를 메타크릴기로 치환한 화합물을 들 수 있다.As an acrylic monomer, for example, acrylic acid, methyl acrylate, ethyl acrylate, 2-ethylhexyl acrylate, n-butyl acrylate, iso-butyl acrylate, iso-propane acrylate, glycidyl acrylate, butoxy Triethylene glycol acrylate, dicyclopentanyl acrylate, dicyclopentenyl acrylate, 2-hydroxyethyl acrylate, isobornyl acrylate, 2-hydroxypropyl acrylate, isodexyl acrylate, isooctyl acrylate, Lauryl acrylate, 2-methoxyethyl acrylate, methoxyethylene glycol acrylate, methoxydiethylene glycol acrylate, octafluoropentyl acrylate, phenoxyethyl acrylate, stearyl acrylate, trifluoroethyl acrylic Acrylate, aminoethyl acrylate, phenyl acrylate, phenoxyethyl acrylate, 1-naphthyl acrylate, 2-naphthyl acrylate, thiophenol acrylate or benzyl mercaptan acrylate, allylated cyclohexyl diacrylate, Methoxylated cyclohexyl diacrylate, 1,4-butanediol diacrylate, 1,3-butylene glycol diacrylate, ethylene glycol diacrylate, diethylene glycol diacrylate, triethylene glycol diacrylate, polyethylene glycol Diacrylate, neopentyl glycol diacrylate, propylene glycol diacrylate, polypropylene glycol diacrylate or triglycerol diacrylate, trimethylolpropane triacrylate, dimethylolpropane tetraacrylate, dipentaerythritol monohydroxy Pentaacrylate or dipentaerythritolhexaacrylate, acrylamide, N-methoxymethylacrylamide, N-ethoxymethylacrylamide, Nn-butoxymethylacrylamide or N-isobutoxymethylacrylamide, epoxy group unsaturated acid Acrylic acid adduct of ethylene glycol diglycidyl ether having a hydroxyl group opened with a ring, acrylic acid adduct of diethylene glycol diglycidyl ether, acrylic acid adduct of neopentyl glycol diglycidyl ether, glycerin diglycidyl ether Epoxy acrylics such as acrylic acid adducts of, bisphenol A diglycidyl ether, acrylic acid adducts of bisphenol F, or cresol novolac acrylic acid adducts And compounds obtained by substituting yt monomer or γ-acryloxypropyltrimethoxysilane, or their acrylic groups with methacrylic groups.
아크릴계 공중합체란 사용하는 모노머, 즉 공중합 성분에 아크릴계 모노머를 포함하는 공중합체를 말한다.The acrylic copolymer refers to a monomer to be used, that is, a copolymer containing an acrylic monomer in the copolymerization component.
카르복실기를 갖는 알칼리 가용성의 아크릴계 공중합체는, 모노머로서 불포화 카르복실산 등의 불포화산을 사용함으로써 얻어진다. 불포화산으로서는, 예를 들면 아크릴산, 메타크릴산, 이타콘산, 크로톤산, 말레산, 푸말산 혹은 아세트산 비닐 또는 이들 산무수물을 들 수 있다. 사용하는 불포화산의 다소에 의해, 얻어지는 아크릴계 공중합체의 산가를 조정할 수 있다.The alkali-soluble acrylic copolymer having a carboxyl group is obtained by using an unsaturated acid such as an unsaturated carboxylic acid as a monomer. As an unsaturated acid, acrylic acid, methacrylic acid, itaconic acid, crotonic acid, maleic acid, fumaric acid, vinyl acetate, or these acid anhydrides are mentioned, for example. The acid value of the obtained acrylic copolymer can be adjusted by some of the unsaturated acids to be used.
또한, 상기 아크릴계 공중합체가 갖는 카르복실기와, 글리시딜(메타)아크릴레이트 등의 불포화 이중결합을 갖는 화합물을 반응시킴으로써, 측쇄에 반응성의 불포화 이중결합을 갖는 알칼리 가용성의 아크릴계 공중합체가 얻어진다.Further, by reacting a carboxyl group of the acrylic copolymer with a compound having an unsaturated double bond such as glycidyl (meth)acrylate, an alkali-soluble acrylic copolymer having a reactive unsaturated double bond in the side chain is obtained.
에폭시카르복실레이트 화합물이란, 에폭시 화합물과 불포화 이중결합을 갖는 카르복실 화합물을 출발 원료로서 합성할 수 있는 화합물을 말한다. 출발 원료가 될 수 있는 에폭시 화합물로서는, 예를 들면 글리시딜에테르류, 지환식 에폭시 수지, 글리시딜에스테르류, 글리시딜아민류 또는 에폭시 수지를 들 수 있지만, 보다 구체적으로는, 메틸글리시딜에테르, 에틸글리시딜에테르, 부틸글리시딜에테르, 에틸렌글리콜디글리시딜에테르, 디에틸렌글리콜디글리시딜에테르, 프로필렌글리콜디글리시딜에테르, 트리프로필렌글리콜디글리시딜에테르, 네오펜틸글리콜디글리시딜에테르, 비스페놀A 디글리시딜에테르, 수소첨가 비스페놀A 디글리시딜에테르, 비스페놀F 디글리시딜에테르, 비스페놀S 디글리시딜에테르, 비스페놀플루오렌디글리시딜에테르, 비페놀디글리시딜에테르, 테트라메틸비페놀글리시딜에테르, 트리메티롤프로판트리글리시딜에테르, 3',4'-에폭시시클로헥실메틸-3,4-에폭시시클로헥산카르복실레이트 또는 tert-부틸글리시딜아민을 들 수 있다. 또한, 불포화 이중결합을 갖는 카르복실 화합물로서는, 예를 들면 (메타)아크릴산, 크로톤산, 계피산 또는 α-시아노계피산을 들 수 있다.The epoxy carboxylate compound refers to a compound capable of synthesizing an epoxy compound and a carboxyl compound having an unsaturated double bond as a starting material. Examples of the epoxy compound that can be a starting material include glycidyl ethers, alicyclic epoxy resins, glycidyl esters, glycidylamines, or epoxy resins, but more specifically, methylglyci Dyl ether, ethyl glycidyl ether, butyl glycidyl ether, ethylene glycol diglycidyl ether, diethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, tripropylene glycol diglycidyl ether, neo Pentyl glycol diglycidyl ether, bisphenol A diglycidyl ether, hydrogenated bisphenol A diglycidyl ether, bisphenol F diglycidyl ether, bisphenol S diglycidyl ether, bisphenol fluorene diglycidyl ether , Biphenol diglycidyl ether, tetramethylbiphenol glycidyl ether, trimethylolpropane triglycidyl ether, 3',4'-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate or tert -Butyl glycidylamine is mentioned. Further, examples of the carboxyl compound having an unsaturated double bond include (meth)acrylic acid, crotonic acid, cinnamic acid, or α-cyanocinic acid.
에폭시카르복실레이트 화합물과 다염기산 무수물을 반응시켜서 에폭시카르복실레이트 화합물의 산가를 조정해도 관계없다. 다염기산 무수물로서는, 예를 들면 무수 숙신산, 무수 프탈산, 테트라히드로 무수 프탈산, 헥사히드로 무수 프탈산, 무수 이타콘산, 3-메틸테트라히드로 무수 프탈산, 4-메틸헥사히드로 무수 프탈산, 무수 트리멜리트산 또는 무수 말레산을 들 수 있다.You may make an epoxy carboxylate compound and a polybasic acid anhydride react, and you may adjust the acid value of an epoxy carboxylate compound. Examples of the polybasic acid anhydride include succinic anhydride, phthalic anhydride, tetrahydrophthalic anhydride, hexahydro phthalic anhydride, itaconic anhydride, 3-methyltetrahydro phthalic anhydride, 4-methylhexahydro phthalic anhydride, trimellitic anhydride or maleic anhydride Mountain.
상기 다염기산 무수물과 반응시킨 에폭시카르복실레이트 화합물이 갖는 카르복실기와, 글리시딜(메타)아크릴레이트 등의 불포화 이중결합을 갖는 화합물을 반응시킴으로써, 에폭시카르복실레이트 화합물이 갖는 반응성의 불포화 이중결합의 양을 조정해도 관계없다.The amount of reactive unsaturated double bonds of the epoxy carboxylate compound by reacting a carboxyl group of the epoxy carboxylate compound reacted with the polybasic acid anhydride and a compound having an unsaturated double bond such as glycidyl (meth)acrylate It doesn't matter if you adjust it.
에폭시카르복실레이트 화합물이 갖는 히드록시기와 디이소시아네이트 화합물을 반응시킴으로써 우레탄화를 해도 관계없다. 디이소시아네이트 화합물로서는, 예를 들면 헥사메틸렌디이소시아네이트, 테트라메틸크실렌디이소시아네이트, 나프탈렌-1,5-디이소시아네이트, 톨리덴디이소시아네이트, 트리메틸헥사메틸렌디이소시아네이트, 이소포론디이소시아네이트, 알릴시안디이소시아네이트 또는 노르보난디이소시아네이트를 들 수 있다.Urethaneization may be performed by reacting the hydroxy group of the epoxy carboxylate compound with a diisocyanate compound. As a diisocyanate compound, for example, hexamethylene diisocyanate, tetramethylxylene diisocyanate, naphthalene-1,5-diisocyanate, tolidene diisocyanate, trimethylhexamethylene diisocyanate, isophorone diisocyanate, allyl cyan diisocyanate, or norbo Nandiisocyanate is mentioned.
불포화 이중결합을 갖는 화합물(C)의 산가는 알칼리 가용성을 조건에 적합한 것으로 하기 위해서 30∼250mgKOH/g인 것이 바람직하다. 산가가 30mgKOH/g 미만이면 가용 부분의 용해성이 저하할 경우가 있다. 한편으로, 산가가 250mgKOH/g을 초과하면 현상 허용 폭이 좁아질 경우가 있다. 또한, 불포화 이중결합을 갖는 화합물(C)의 산가는 JISK 0070(1992)에 준거해서 측정할 수 있다.The acid value of the compound (C) having an unsaturated double bond is preferably 30 to 250 mgKOH/g in order to make alkali solubility suitable for conditions. If the acid value is less than 30 mgKOH/g, the solubility of the soluble portion may decrease. On the other hand, when the acid value exceeds 250 mgKOH/g, the allowable development width may be narrowed. In addition, the acid value of the compound (C) having an unsaturated double bond can be measured in accordance with JIS K 0070 (1992).
본 발명의 도전 페이스트는 광중합 개시제(D)를 함유한다. 광중합 개시제(D)로서는, 예를 들면 1,2-옥탄디온-1-[4-(페닐티오)-2-(O-벤조일옥심)], 2,4,6-트리메틸벤조일-디페닐-포스핀옥사이드, 비스(2,4,6-트리메틸벤조일)-페닐포스핀옥사이드, 에탄온-1-[9-에틸-6-2(2-메틸벤조일)-9H-카르바졸-3-일]-1-(O-아세틸옥심), 벤조페논, o-벤조일벤조산 메틸, 4,4'-비스(디메틸아미노)벤조페논, 4,4'-비스(디에틸아미노)벤조페논, 4,4'-디클로로벤조페논, 4-벤조일-4'-메틸디페닐케톤, 디벤질케톤, 플루올레논, 2,2'-디에톡시아세토페논, 2,2-디메톡시-2-페닐아세토페논, 2-히드록시-2-메틸프로피오페논, p-t-부틸디클로로아세토페논, 티오크산톤, 2-메틸티오크산톤, 2-클로로티오크산톤, 2-이소프로필티오크산톤, 디에틸티오크산톤, 벤질, 벤질디메틸케탈, 벤질-β-메톡시에틸아세탈, 벤조인, 벤조인메틸에테르, 벤조인부틸에테르, 안트라퀴논, 2-t-부틸안트라퀴논, 2-아밀안트라퀴논, β-클로르안트라퀴논, 안트론, 벤즈안트론, 디벤조스베론, 메틸렌안트론, 4-아지드벤잘아세토페논, 2,6-비스(p-아지드벤질리덴)시클로헥산온, 6-비스(p-아지드벤질리덴)-4-메틸시클로헥산온, 1-페닐-1,2-부탄디온-2-(O-메톡시카르보닐)옥심, 1-페닐-프로판디온-2-(O-에톡시카르보닐)옥심, 1-페닐-프로판디온-2-(O-벤조일)옥심, 1,3-디페닐-프로판트리온-2-(O-에톡시카르보닐)옥심, 1-페닐-3-에톡시-프로판트리온-2-(O-벤조일)옥심, 미힐러케톤, 2-메틸-[4-(메틸티오)페닐]-2-모르폴리노-1-프로판온, 나프탈렌술포닐클로라이드, 퀴놀린술포닐클로라이드, N-페닐티오아크리돈, 4,4'-아조비스이소부틸로니트릴, 디페닐디술피드, 벤즈티아졸디술피드, 트리페닐포스핀, 캠퍼퀴논, 2,4-디에틸티오크산톤, 이소프로필티오크산톤, 4브롬화탄소, 트리브로모페닐술폰, 과산화벤조인, 에오신 또는 메틸렌블루 등의 광 환원성 색소와, 아스코르브산 혹은 트리에탄올아민 등의 환원제의 조합을 들 수 있지만, 광 감도가 높은 옥심에스테르계 화합물이 바람직하다.The conductive paste of the present invention contains a photoinitiator (D). As a photoinitiator (D), for example, 1,2-octanedione-1-[4-(phenylthio)-2-(O-benzoyloxime)], 2,4,6-trimethylbenzoyl-diphenyl-phos Pin oxide, bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide, ethanone-1-[9-ethyl-6-2(2-methylbenzoyl)-9H-carbazol-3-yl]- 1-(O-acetyloxime), benzophenone, o-benzoylbenzoic acid methyl, 4,4'-bis(dimethylamino)benzophenone, 4,4'-bis(diethylamino)benzophenone, 4,4'- Dichlorobenzophenone, 4-benzoyl-4'-methyldiphenylketone, dibenzyl ketone, fluolenone, 2,2'-diethoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2-hydro Roxy-2-methylpropiophenone, pt-butyldichloroacetophenone, thioxanthone, 2-methyl thioxanthone, 2-chloro thioxanthone, 2-isopropyl thioxanthone, diethyl thioxanthone, benzyl, Benzyldimethylketal, benzyl-β-methoxyethylacetal, benzoin, benzoinmethylether, benzoinbutylether, anthraquinone, 2-t-butylanthraquinone, 2-amylanthraquinone, β-chloranthraquinone, an Tron, benzanthrone, dibenzosverone, methyleneanthrone, 4-azidebenzalacetophenone, 2,6-bis(p-azidebenzylidene)cyclohexanone, 6-bis(p-azidebenzylidene) )-4-methylcyclohexanone, 1-phenyl-1,2-butanedione-2-(O-methoxycarbonyl)oxime, 1-phenyl-propanedione-2-(O-ethoxycarbonyl)oxime , 1-phenyl-propanedione-2-(O-benzoyl)oxime, 1,3-diphenyl-propanetrione-2-(O-ethoxycarbonyl)oxime, 1-phenyl-3-ethoxy-propane Trione-2-(O-benzoyl)oxime, Michler's ketone, 2-methyl-[4-(methylthio)phenyl]-2-morpholino-1-propanone, naphthalenesulfonyl chloride, quinolinesulfonyl chloride , N-phenylthioacridone, 4,4'-azobisisobutylonitrile, diphenyldisulfide, benzthiazole disulfide, triphenylphosphine, camphorquinone, 2,4-diethylthioxanthone, A combination of a photoreducing dye such as isopropyl thioxanthone, carbon tetrabromide, tribromophenyl sulfone, benzoin peroxide, eosin or methylene blue, and a reducing agent such as ascorbic acid or triethanolamine, but high light sensitivity Oxim S Ter system compounds are preferred.
광중합 개시제(D)의 첨가량은 불포화 이중결합을 갖는 화합물(C) 100질량부에 대하여 0.05∼30질량부가 바람직하다. 불포화 이중결합을 갖는 화합물(C) 100질량부에 대한 첨가량이 0.05질량부 이상이면, 노광부의 경화 밀도가 증가하고, 현상 후의 잔막율을 높게 할 수 있다. 한편으로, 불포화 이중결합을 갖는 화합물(C) 100질량부에 대한 첨가량이 30질량부 이하이면, 도전 페이스트를 도포해서 얻어진 도포막 상부에서의 광중합 개시제(D)에 의한 과잉한 광흡수가 억제된다. 그 결과, 제조된 도전 패턴이 역테이퍼 형상으로 되는 것에 의한, 기판과의 밀착성 저하가 억제된다.The amount of the photoinitiator (D) added is preferably 0.05 to 30 parts by mass per 100 parts by mass of the compound (C) having an unsaturated double bond. When the amount added to 100 parts by mass of the compound (C) having an unsaturated double bond is 0.05 parts by mass or more, the curing density of the exposed area increases, and the film remaining ratio after development can be increased. On the other hand, if the addition amount to 100 parts by mass of the compound (C) having an unsaturated double bond is 30 parts by mass or less, excessive light absorption by the photopolymerization initiator (D) on the top of the coating film obtained by applying the conductive paste is suppressed. . As a result, the decrease in adhesion to the substrate is suppressed due to the inverse tapered shape of the produced conductive pattern.
본 발명의 도전 페이스트는 광중합 개시제(D)와 함께 증감제를 함유해도 관계없다.The conductive paste of the present invention may contain a sensitizer together with the photoinitiator (D).
증감제로서는, 예를 들면 2,4-디에틸티오크산톤, 이소프로필티오크산톤, 2,3-비스(4-디에틸아미노벤잘)시클로펜탄온, 2,6-비스(4-디메틸아미노벤잘)시클로헥산온, 2,6-비스(4-디메틸아미노벤잘)-4-메틸시클로헥산온, 미힐러케톤, 4,4-비스(디에틸아미노)벤조페논, 4,4-비스(디메틸아미노)칼콘, 4,4-비스(디에틸아미노)칼콘, p-디메틸아미노신나밀리덴인단온, p-디메틸아미노벤질리덴인단온, 2-(p-디메틸아미노페닐비닐렌)이소나프토티아졸, 1,3-비스(4-디메틸아미노페닐비닐렌)이소나프토티아졸, 1,3-비스(4-디메틸아미노벤잘)아세톤, 1,3-카르보닐비스(4-디에틸아미노벤잘)아세톤, 3,3-카르보닐비스(7-디에틸아미노쿠마린), N-페닐-N-에틸에탄올아민, N-페닐에탄올아민, N-톨릴디에탄올아민, 디메틸아미노벤조산 이소아밀, 디에틸아미노벤조산 이소아밀, 3-페닐-5-벤조일티오테트라졸 또는 1-페닐-5-에톡시카르보닐티오테트라졸을 들 수 있다.As a sensitizer, for example, 2,4-diethyl thioxanthone, isopropyl thioxanthone, 2,3-bis(4-diethylaminobenzal)cyclopentanone, 2,6-bis(4-dimethylamino Benzal)cyclohexanone, 2,6-bis(4-dimethylaminobenzal)-4-methylcyclohexanone, Michler's ketone, 4,4-bis(diethylamino)benzophenone, 4,4-bis(dimethyl Amino) chalcone, 4,4-bis (diethylamino) chalcone, p-dimethylamino cinnamylidene indone, p-dimethylamino benzylidene indone, 2-(p-dimethylaminophenylvinylene) isonaphthothiazole , 1,3-bis(4-dimethylaminophenylvinylene)isonaphthothiazole, 1,3-bis(4-dimethylaminobenzal)acetone, 1,3-carbonylbis(4-diethylaminobenzal)acetone , 3,3-carbonylbis (7-diethylaminocoumarin), N-phenyl-N-ethylethanolamine, N-phenylethanolamine, N-tolyldiethanolamine, dimethylaminobenzoic acid isoamyl, diethylaminobenzoic acid Isoamyl, 3-phenyl-5-benzoylthiotetrazole or 1-phenyl-5-ethoxycarbonylthiotetrazole.
증감제의 첨가량은 불포화 이중결합을 갖는 화합물(C) 100질량부에 대하여 0.05∼10질량부가 바람직하다. 불포화 이중결합을 갖는 화합물(C) 100질량부에 대한 첨가량이 0.05질량부 이상이면 광 감도가 향상한다. 한편으로, 불포화 이중결합을 갖는 화합물(C) 100질량부에 대한 첨가량이 10질량부 이하이면 도전 페이스트를 도포해서 얻어진 도포막 상부에서의, 과잉한 광흡수가 억제된다. 그 결과, 제조된 도전 패턴이 역테이퍼 형상으로 되는 것에 의한 기판과의 밀착성 저하가 억제된다.The amount of the sensitizer added is preferably 0.05 to 10 parts by mass per 100 parts by mass of the compound (C) having an unsaturated double bond. When the amount added to 100 parts by mass of the compound (C) having an unsaturated double bond is 0.05 parts by mass or more, the light sensitivity is improved. On the other hand, when the addition amount to 100 parts by mass of the compound (C) having an unsaturated double bond is 10 parts by mass or less, excessive light absorption on the top of the coating film obtained by applying the conductive paste is suppressed. As a result, the decrease in adhesion to the substrate due to the inverted tapered shape of the produced conductive pattern is suppressed.
본 발명의 도전 페이스트는 용제(E)를 함유한다. 용제(E)로서는, 예를 들면 N,N-디메틸아세트아미드, N,N-디메틸포름아미드, N-메틸-2-피롤리돈, 디메틸이미다졸리디논, 디메틸술폭시드, γ-부티로락톤, 락트산 에틸, 1-메톡시-2-프로판올, 1-에톡시-2-프로판올, 에틸렌글리콜모노-n-프로필에테르, 디아세톤알콜, 테트라히드로푸르푸릴알콜, 프로필렌글리콜모노메틸에테르아세테이트, 디에틸렌글리콜모노에틸에테르아세테이트, 디에틸렌글리콜모노메틸에테르, 디에틸렌글리콜모노에틸에테르아세테이트(이하, 「DMEA」), 디에틸렌글리콜모노부틸에테르, 디에틸렌글리콜모노부틸에테르아세테이트, 트리에틸렌글리콜디메틸에테르 또는 2,2,4,-트리메틸-1,3-펜탄디올모노이소부틸레이트를 들 수 있지만, 비점이 150℃ 이상인 용매가 바람직하다. 비점이 150℃ 이상이면 용제(E)의 휘발이 억제되어 도전 페이스트의 증점을 억제할 수 있다.The conductive paste of the present invention contains a solvent (E). As the solvent (E), for example, N,N-dimethylacetamide, N,N-dimethylformamide, N-methyl-2-pyrrolidone, dimethylimidazolidinone, dimethyl sulfoxide, γ-butyrolactone , Ethyl lactate, 1-methoxy-2-propanol, 1-ethoxy-2-propanol, ethylene glycol mono-n-propyl ether, diacetone alcohol, tetrahydrofurfuryl alcohol, propylene glycol monomethyl ether acetate, diethylene Glycol monoethyl ether acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether acetate (hereinafter, ``DMEA''), diethylene glycol monobutyl ether, diethylene glycol monobutyl ether acetate, triethylene glycol dimethyl ether or 2 ,2,4,-trimethyl-1,3-pentanediol monoisobutylate may be mentioned, but a solvent having a boiling point of 150°C or higher is preferable. When the boiling point is 150°C or higher, the volatilization of the solvent (E) is suppressed, and the thickening of the conductive paste can be suppressed.
본 발명의 도전 페이스트는 그 원하는 특성을 손상하지 않는 범위이면, 분자 내에 불포화 이중결합을 갖지 않는 비감광성 폴리머 또는 가소제, 레벨링제, 계면활성제, 실란 커플링제, 소포제 혹은 안료 등의 첨가제를 함유해도 관계없다.The conductive paste of the present invention may contain additives such as non-photosensitive polymers or plasticizers, leveling agents, surfactants, silane coupling agents, antifoaming agents or pigments that do not have an unsaturated double bond in the molecule as long as the desired properties are not impaired. none.
상기 비감광성 폴리머로서는, 예를 들면 에폭시 수지, 노볼락 수지, 페놀 수지, 폴리이미드 전구체 또는 그 폐환 폴리이미드를 들 수 있다.Examples of the non-photosensitive polymer include an epoxy resin, a novolac resin, a phenol resin, a polyimide precursor, or a cyclic polyimide thereof.
가소제로서는, 예를 들면 디부틸프탈레이트, 디옥틸프탈레이트, 폴리에틸렌글리콜 또는 글리세린을 들 수 있다.As a plasticizer, dibutyl phthalate, dioctyl phthalate, polyethylene glycol, or glycerin is mentioned, for example.
레벨링제로서는, 예를 들면 특수 비닐계 중합물 또는 특수 아크릴계 중합물을 들 수 있다.As the leveling agent, a special vinyl polymer or a special acrylic polymer can be mentioned, for example.
실란 커플링제로서는, 예를 들면 메틸트리메톡시실란, 디메틸디에톡시실란, 페닐트리에톡시실란, 헥사메틸디실라잔, 3-메타크릴옥시프로필트리메톡시실란, 3-글리시독시프로필트리메톡시실란 또는 비닐트리메톡시실란을 들 수 있다.As the silane coupling agent, for example, methyltrimethoxysilane, dimethyldiethoxysilane, phenyltriethoxysilane, hexamethyldisilazane, 3-methacryloxypropyltrimethoxysilane, and 3-glycidoxypropyltrime Oxysilane or vinyl trimethoxysilane.
본 발명의 도전 페이스트는, 예를 들면 3단 롤러, 볼밀 혹은 유성식 볼밀 등의 분산기 또는 혼련기를 이용하여 제조된다.The conductive paste of the present invention is manufactured using a dispersing machine or a kneader such as a three-stage roller, a ball mill, or a planetary ball mill.
본 발명의 도전 패턴의 제조방법은 본 발명의 도전 페이스트를 기판 상에 도포하고, 건조하고, 노광하고, 현상한 후에, 100∼300℃에서 경화하는 것을 특징으로 한다.The method for producing a conductive pattern of the present invention is characterized in that the conductive paste of the present invention is applied onto a substrate, dried, exposed, and developed, and then cured at 100 to 300°C.
본 발명의 도전 페이스트를 기판 상에 도포함으로써 도포막을 얻는다.A coating film is obtained by applying the conductive paste of the present invention on a substrate.
본 발명의 도전 페이스트를 도포하는 기판으로서는, 예를 들면 폴리에틸렌테레프탈레이트 필름(이하, 「PET 필름」), 폴리이미드 필름, 폴리에스테르 필름, 아라미드 필름, 에폭시 수지 기판, 폴리에테르이미드 수지 기판, 폴리에테르케톤 수지 기판, 폴리설폰계 수지 기판, 유리 기판, 규소 웨이퍼, 알루미나 기판, 질화알루미늄 기판, 탄화규소 기판, 가식층 형성 기판 또는 절연층 형성 기판을 들 수 있다.As a substrate to which the conductive paste of the present invention is applied, for example, a polyethylene terephthalate film (hereinafter, ``PET film''), a polyimide film, a polyester film, an aramid film, an epoxy resin substrate, a polyetherimide resin substrate, and a polyether A ketone resin substrate, a polysulfone resin substrate, a glass substrate, a silicon wafer, an alumina substrate, an aluminum nitride substrate, a silicon carbide substrate, a decorative layer forming substrate, or an insulating layer forming substrate may be mentioned.
본 발명의 도전 페이스트를 기판에 도포하는 방법으로서는, 예를 들면 스피너를 사용한 회전 도포, 스프레이 도포, 롤 코팅, 스크린 인쇄 또는 블레이드 코터, 다이 코터, 캘린더 코터, 메니스커스 코터 혹은 바 코터를 사용한 도포를 들 수 있다. 얻어지는 도포막의 막두께는 도포의 방법 또는 도전 페이스트의 전체 고형분 농도 혹은 점도 등에 따라 적당하게 결정하면 좋지만, 건조 후의 막두께가 0.1∼50㎛로 되는 것이 바람직하다. 또한 막두께는, 서프컴(등록상표) 1400((주) 도쿄 세이미츠제)과 같은 촉침식 단차계를 이용하여 측정할 수 있다. 보다 구체적으로는, 무작위로 선택한 3개의 위치의 막두께를 촉침식 단차계(즉장: 1㎜, 주사 속도: 0.3㎜/sec)로 각각 측정하고, 그것들의 평균값을 구함으로써 산출할 수 있다.As a method of applying the conductive paste of the present invention to a substrate, for example, spin coating using a spinner, spray coating, roll coating, screen printing or coating using a blade coater, die coater, calender coater, meniscus coater or bar coater. Can be mentioned. The film thickness of the resulting coating film may be appropriately determined according to the method of application or the total solid concentration or viscosity of the conductive paste, but the film thickness after drying is preferably 0.1 to 50 µm. In addition, the film thickness can be measured using a stylus type step meter such as Surfcom (registered trademark) 1400 (manufactured by Tokyo Seimitsu Co., Ltd.). More specifically, it can be calculated by measuring the film thicknesses at three randomly selected positions with a stylus type step meter (immediate length: 1 mm, scanning speed: 0.3 mm/sec), and calculating their average values.
얻어진 도포막을 건조해서 용제를 휘발시킨다. 도포막을 건조해서 용제를 휘발 제거하는 방법으로서는, 예를 들면 오븐, 핫플레이트 혹은 적외선 등에 의한 가열 건조 또는 진공 건조를 들 수 있다. 가열 온도는 50∼180℃가 바람직하고, 가열 시간은 1분∼수시간이 바람직하다.The obtained coating film is dried and the solvent is volatilized. As a method of drying the coating film to volatilize and remove the solvent, for example, heat drying or vacuum drying using an oven, a hot plate, or infrared rays or the like can be mentioned. The heating temperature is preferably 50 to 180°C, and the heating time is preferably 1 minute to several hours.
건조 후의 도포막은 임의의 패턴 형성용 마스크를 통해서 포토리소그래피법에 의해 노광한다. 노광의 광원으로서는 수은등의 i선(365㎚), h선(405㎚) 또는 g선(436㎚)이 바람직하다.The dried coating film is exposed through a photolithography method through an arbitrary pattern forming mask. As a light source for exposure, i-line (365 nm), h-line (405 nm), or g-line (436 nm) of a mercury lamp is preferable.
노광 후의 도포막은 현상액을 이용하여 현상하고, 미노광부를 용해 제거하여 원하는 패턴을 얻는다. 알칼리 현상을 행할 경우의 현상액으로서는, 예를 들면 수산화테트라메틸암모늄, 디에탄올아민, 디에틸아미노에탄올, 수산화나트륨, 수산화칼륨, 탄산 나트륨, 탄산 칼륨, 트리에틸아민, 디에틸아민, 메틸아민, 디메틸아민, 아세트산 디메틸아미노에틸, 디메틸아미노에탄올, 디메틸아미노에틸메타크릴레이트, 시클로헥실아민, 에틸렌디아민 또는 헥사메틸렌디아민의 수용액을 들 수 있지만, 이것들의 수용액에, N-메틸-2-피롤리돈, N,N-디메틸포름아미드, N,N-디메틸아세트아미드, 디메틸술폭시드 혹은 γ-부티로락톤 등의 극성용매, 메탄올, 에탄올 또는 이소프로판올 등의 알콜류, 락트산 에틸 또는 프로필렌글리콜모노메틸에테르아세테이트 등의 에스테르류, 시클로펜탄온, 시클로헥산온, 이소부틸케톤 혹은 메틸이소부틸케톤 등의 케톤류 또는 계면활성제를 첨가해도 관계없다.The coated film after exposure is developed using a developer, and the unexposed portion is dissolved and removed to obtain a desired pattern. As a developer for alkali development, for example, tetramethylammonium hydroxide, diethanolamine, diethylaminoethanol, sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, triethylamine, diethylamine, methylamine, dimethyl Amine, dimethylaminoethyl acetate, dimethylaminoethanol, dimethylaminoethyl methacrylate, cyclohexylamine, ethylenediamine, or aqueous solutions of hexamethylenediamine are mentioned, but in these aqueous solutions, N-methyl-2-pyrrolidone, Polar solvents such as N,N-dimethylformamide, N,N-dimethylacetamide, dimethylsulfoxide or γ-butyrolactone, alcohols such as methanol, ethanol or isopropanol, ethyl lactate or propylene glycol monomethyl ether acetate, etc. Ketones, such as esters, cyclopentanone, cyclohexanone, isobutyl ketone, or methyl isobutyl ketone, or surfactant may be added.
유기현상을 행할 경우의 현상액으로서는, 예를 들면 N-메틸-2-피롤리돈, N-아세틸-2-피롤리돈, N,N-디메틸아세트아미드, N,N-디메틸포름아미드, 디메틸술폭시드 혹은 헥사메틸포스포르트리아미드 등의 극성용매 또는 이들 극성용매와 메탄올, 에탄올, 이소프로필알콜, 크실렌, 물, 메틸카르비톨 혹은 에틸카르비톨의 혼합 용액을 들 수 있다.As a developer for performing organic development, for example, N-methyl-2-pyrrolidone, N-acetyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, dimethylsulfoxide A polar solvent such as seed or hexamethylphosphotriamide, or a mixed solution of these polar solvents and methanol, ethanol, isopropyl alcohol, xylene, water, methylcarbitol or ethylcarbitol.
현상의 방법으로서는, 예를 들면 기판을 정치 또는 회전시키면서 현상액을 도포막면에 스프레이하는 방법, 기판을 현상액 중에 침지하는 방법, 또는 기판을 현상액 중에 침지하면서 초음파를 가하는 방법을 들 수 있다.As a method of development, for example, a method of spraying a developer onto the coated film surface while the substrate is standing or rotating, a method of immersing the substrate in the developer, or a method of applying ultrasonic waves while immersing the substrate in the developer.
현상에 의해 얻어진 패턴은 린스액에 의한 린스 처리를 실시해도 관계없다. 여기에서 린스액으로서는, 예를 들면 물 또는 물에 에탄올 혹은 이소프로필알콜 등의 알콜류 또는 락트산 에틸 혹은 프로필렌글리콜모노메틸에테르아세테이트 등의 에스테르류를 첨가한 수용액을 들 수 있다.The pattern obtained by development may be rinsed with a rinse liquid. Examples of the rinse solution include water or an aqueous solution in which an alcohol such as ethanol or isopropyl alcohol or an ester such as ethyl lactate or propylene glycol monomethyl ether acetate is added to water or water.
얻어진 패턴은 100∼300℃에서 경화한다. 경화의 온도는 120∼180℃가 바람직하다. 경화 온도가 100℃ 미만이면, 수지 성분의 체적 수축량이 커지지 않고, 비저항이 충분하게 낮아지지 않는다. 한편으로, 경화 온도가 300℃를 초과하면, 내열성이 낮은 기판 등의 재료 상에 도전 패턴을 제조할 수 없다.The obtained pattern is cured at 100 to 300°C. The curing temperature is preferably 120 to 180°C. When the curing temperature is less than 100° C., the volumetric shrinkage of the resin component does not increase, and the specific resistance does not sufficiently decrease. On the other hand, when the curing temperature exceeds 300°C, a conductive pattern cannot be produced on a material such as a substrate having low heat resistance.
얻어진 패턴을 경화하는 방법으로서는, 예를 들면 오븐, 이너트오븐 또는 핫플레이트에 의한 가열 건조, 자외선 램프, 적외선 히터, 할로겐 히터 혹은 크세논 플래시램프 등의 전자파, 또는 마이크로파에 의한 가열 건조, 또는 진공 건조를 들 수 있다. 가열에 의해, 제조되는 적층 패턴의 경도가 높아지고, 다른 부재와의 접촉에 의한 깨짐이나 박리 등을 억제할 수 있고, 또한 기판과의 밀착성을 향상시킬 수 있다.As a method of curing the obtained pattern, for example, heat drying with an oven, inner oven or hot plate, heat drying with an ultraviolet lamp, an infrared heater, an electromagnetic wave such as a halogen heater or a xenon flash lamp, or heat drying with a microwave, or vacuum drying. Can be mentioned. By heating, the hardness of the laminated pattern to be produced increases, cracking or peeling due to contact with other members can be suppressed, and adhesion with the substrate can be improved.
본 발명의 터치패널은 본 발명의 도전 페이스트로 형성된 도전 패턴과, ITO로 이루어지는 투명전극을 구비하고, 상기 투명전극과 상기 도전 패턴이 접속되는 것을 특징으로 한다.The touch panel of the present invention includes a conductive pattern formed of the conductive paste of the present invention and a transparent electrode made of ITO, and the transparent electrode and the conductive pattern are connected.
본 발명의 도전 페이스트를 이용하여 제조되는 도전 패턴은 ITO로 이루어지는 투명전극을 구비한 터치패널용의 주위배선으로서 적합하게 사용된다. 상술한 바와 같이, 도전 페이스트 중에 포함되는 카본 입자는 투명전극 중에서도 특히 ITO와의 젖음성이 양호하기 때문에, 도전 페이스트와 ITO의 계면에 카본 입자가 모이고, 접촉점 수가 증대하여 도전 패스가 증대하므로, 고습 고열 등의 환경변화를 거쳐도 접촉저항을 안정적으로 유지 가능하게 한다고 하는 효과를 증대시키기 때문이다.The conductive pattern produced by using the conductive paste of the present invention is suitably used as peripheral wiring for a touch panel provided with a transparent electrode made of ITO. As described above, since the carbon particles contained in the conductive paste have particularly good wettability with ITO among the transparent electrodes, carbon particles are collected at the interface between the conductive paste and ITO, and the number of contact points increases to increase the conductive path, such as high humidity, high temperature, etc. This is because it increases the effect of stably maintaining contact resistance even through environmental changes.
터치패널의 방식으로서는, 예를 들면 저항막식, 광학식, 전자 유도식 또는 정전 용량식을 들 수 있다. 정전 용량식 터치패널은, 특히 미세한 배선이 요구되기 때문에, 본 발명의 도전 페이스트가 보다 적합하게 사용된다.As a method of a touch panel, a resistive film type, an optical type, an electromagnetic induction type, or a capacitive type can be mentioned, for example. In the capacitive touch panel, since particularly fine wiring is required, the conductive paste of the present invention is more suitably used.
또한, 정전 용량식 터치패널에서는 투명전극으로부터 IC칩에 전기신호를 전달할 필요가 있기 때문에, 주위배선의 적어도 일부분은 투명전극 상에 형성되어 있는 것이 필요하다. 상술한 바와 같이, 본 발명의 도전 페이스트를 이용하여 제조되는 도전 패턴은 ITO와의 접속 신뢰성이 뛰어나기 때문에 보다 적합하게 사용된다.In addition, in the capacitive touch panel, since it is necessary to transmit an electric signal from the transparent electrode to the IC chip, it is necessary that at least a part of the peripheral wiring is formed on the transparent electrode. As described above, the conductive pattern manufactured by using the conductive paste of the present invention is more suitably used because it has excellent connection reliability with ITO.
본 발명의 제조방법에 의해 제조된 도전 패턴을 그 주위배선으로서 구비하고, 또한 상기 주위배선이 50㎛ 피치(배선 폭 + 배선간 폭) 이하인 터치패널에 있어서는, 테두리 폭을 가늘게 할 수 있고, 뷰 에리어를 넓게 할 수 있다.In a touch panel having a conductive pattern manufactured by the manufacturing method of the present invention as its peripheral wiring, and the peripheral wiring having a pitch of 50 μm or less (wire width + wiring width), the edge width can be made thinner, Area can be widened.
실시예Example
이하, 실시예 및 비교예를 들어서 본 발명을 더욱 상세하게 설명하지만, 본 발명은 이것들에 한정되는 것은 아니다.Hereinafter, although an Example and a comparative example are given and this invention is demonstrated in more detail, this invention is not limited to these.
각 실시예 및 비교예에서 사용한 평가 방법은 이하와 같다.The evaluation methods used in each Example and Comparative Example are as follows.
<패터닝성의 평가 방법><Evaluation method of patterning property>
PET 필름 상에 도전 페이스트를 건조 후의 막두께가 7㎛가 되도록 도포하고, 얻어진 도포막을 100℃의 건조 오븐 내에서 5분간 건조했다. 일정한 라인 앤드 스페이스(이하, 「L/S」)로 배열된 직선군 즉 투광 패턴을 1개의 유닛으로 하고, L/S의 값이 다른 9종류의 유닛을 각각 갖는 포토마스크를 통해서 건조 후의 도포막을 노광 및 현상하여 L/S의 값이 다른 9종류의 패턴을 각각 얻었다. 그 후, 얻어진 9개의 패턴을 30분간, 140℃의 건조 오븐 내에서 모두 경화하여 L/S의 값이 다른 9종류의 도전 패턴을 각각 얻었다. 포토마스크가 갖는 각 유닛의 L/S의 값은 라인 폭(㎛)/간격(㎛)이 500/500, 250/250, 100/100, 50/50, 40/40, 30/30, 25/25, 20/20, 15/15이다. 얻어진 도전 패턴을 광학현미경으로 관찰했다. 패턴간에 잔사가 없고, 또한 패턴 박리가 없는 L/S의 값이 최소의 도전 패턴을 확인했다. 그 L/S의 값을 현상 가능한 L/S의 값으로 했다. 과현상으로 되어 패턴이 소실된 것을 「패턴 흐름」으로 했다.The conductive paste was applied onto the PET film so that the film thickness after drying became 7 µm, and the obtained coated film was dried in a drying oven at 100°C for 5 minutes. A linear group, that is, a light-transmitting pattern, arranged in a certain line and space (hereinafter, ``L/S'') as one unit, and the dried coated film through a photomask each having 9 types of units with different L/S values. It exposed and developed to obtain 9 types of patterns with different L/S values, respectively. Thereafter, all of the obtained nine patterns were cured in a drying oven at 140° C. for 30 minutes to obtain nine types of conductive patterns with different L/S values. The L/S value of each unit of the photomask is 500/500, 250/250, 100/100, 50/50, 40/40, 30/30, 25/ for line width (㎛)/interval (㎛) 25, 20/20, 15/15. The obtained conductive pattern was observed with an optical microscope. There was no residue between patterns, and the conductive pattern with the minimum value of L/S without pattern peeling was confirmed. The L/S value was taken as the developable L/S value. What became over-developed and the pattern disappeared was made into "pattern flow".
또한, 노광은 노광장치(PEM-6M; 유니온 코우가쿠 가부시키갸이샤제)를 이용하여 노광량 150mJ/㎠(파장 365㎚ 환산)로 전선노광을 행하고, 현상은 0.2질량%의 Na2CO3 용액에 기판을 30초 침지시킨 후, 초순수에 의한 린스 처리를 실시해 행하였다.In addition, for exposure, wire exposure was performed at an exposure amount of 150 mJ/cm 2 (in terms of wavelength 365 nm) using an exposure apparatus (PEM-6M; manufactured by Union Kogaku Co., Ltd.), and development was performed with a 0.2 mass% Na 2 CO 3 solution. After immersing the substrate for 30 seconds, rinse treatment with ultrapure water was performed.
<비저항의 평가방법><Method of evaluating specific resistance>
PET 필름 상에 도전 페이스트를 건조 후의 막두께가 7㎛가 되도록 도포하고, 얻어진 도포막을 100℃의 건조 오븐 내에서 5분간 건조했다. 도 1에 나타내는 투광 패턴(A)을 갖는 포토마스크를 통해서 건조 후의 도포막을 노광 및 현상하고, 패턴을 얻었다. 그 후, 얻어진 패턴을 30분간, 140℃의 건조 오븐 내에서 경화하여 비저항 측정용의 도전성 패턴을 얻었다. 얻어진 도전성 패턴의 라인 폭은 0.400㎜이며, 라인 길이는 80㎜이었다.The conductive paste was applied onto the PET film so that the film thickness after drying became 7 µm, and the obtained coated film was dried in a drying oven at 100°C for 5 minutes. The dried coating film was exposed and developed through a photomask having a light-transmitting pattern (A) shown in FIG. 1 to obtain a pattern. Thereafter, the obtained pattern was cured in a drying oven at 140° C. for 30 minutes to obtain a conductive pattern for measuring specific resistance. The line width of the obtained conductive pattern was 0.400 mm, and the line length was 80 mm.
또한, 노광 및 현상의 조건은 상기 패터닝성의 평가방법과 같은 방법으로 했다. 얻어진 비저항 측정용의 도전 패턴의 각각의 단부를 저항계로 연결시켜서 저항값을 측정하고, 이하의 식(1)에 의거하여 비저항을 산출했다. 도통이 보여지지 않는 것을 「절연」이라고 했다.In addition, exposure and development conditions were the same as the method for evaluating the patterning property. Each end of the obtained conductive pattern for specific resistance measurement was connected with an ohmmeter to measure the resistance value, and the specific resistance was calculated based on the following equation (1). It was called "insulation" that no conduction was seen.
비저항=저항값×막두께×선폭/라인 길이 …(1).Resistivity = resistance value × film thickness × line width / line length… (One).
<투명전극과의 접속 신뢰성 평가방법><Method of evaluating connection reliability with transparent electrodes>
PET 필름에 투명전극이 전면 형성된 투명 도전 필름 상에, 도전 페이스트를 건조 후의 막두께가 7㎛가 되도록 도포하고, 얻어진 도포막을 100℃의 건조 오븐에서 5분간 건조했다. 도 2에 나타내는 투광 패턴(A)을 갖는 포토마스크를 통해서 건조 후의 도포막을 노광 및 현상하고, 패턴을 얻었다. 그 후, 얻어진 패턴을 30분간, 140℃의 건조 오븐 내에서 경화하여 투명전극과의 접속 신뢰성 평가 샘플을 얻었다. 얻어진 샘플에 있어서의 도전성 패턴의 라인 폭은 0.100㎜이며, 라인간은 5㎜이며, 단자부는 직경 2㎜의 원형이었다.On the transparent conductive film in which the transparent electrode was entirely formed on the PET film, the conductive paste was applied so that the film thickness after drying became 7 µm, and the obtained coating film was dried in a drying oven at 100°C for 5 minutes. The dried coating film was exposed and developed through a photomask having a light-transmitting pattern (A) shown in FIG. 2 to obtain a pattern. Thereafter, the obtained pattern was cured in a drying oven at 140° C. for 30 minutes to obtain a sample for evaluation of connection reliability with a transparent electrode. The line width of the conductive pattern in the obtained sample was 0.100 mm, the line-to-line was 5 mm, and the terminal portion was circular with a diameter of 2 mm.
얻어진 샘플에 있어서의 도전성 패턴의 단자부를 테스터로 연결시키고, 초기저항값을 측정한 후, 85℃, 85%RH의 항온항습조(LU-113; 에스펙(주)) 내에서 500시간 보관했다. 그 후, 인출한 샘플에 있어서의 도전성 패턴의 단자부를 테스터로 연결시켜 보관 후 저항값을 측정하고, 이하의 식(2)에 의거하여 저항 변화율을 산출했다. 산출한 저항 변화율이 1.30 이하인 것을 A, 1.30보다 크고 1.50 이하인 것을 B, 1.50보다 큰 것은 C로 판정했다.The terminal part of the conductive pattern in the obtained sample was connected with a tester, the initial resistance value was measured, and then stored for 500 hours in a constant temperature and humidity tank (LU-113; SPEC Co., Ltd.) at 85°C and 85% RH. . Thereafter, the terminal portion of the conductive pattern in the pulled out sample was connected with a tester, the resistance value after storage was measured, and the resistance change rate was calculated based on the following equation (2). A calculated resistance change rate of 1.30 or less was determined as A, a value greater than 1.30 and 1.50 or less was determined as B, and a value greater than 1.50 was determined as C.
저항 변화율=보관 후 저항값(500시간 후)/초기 저항값 …(2).Resistance change rate = resistance value after storage (after 500 hours)/initial resistance value… (2).
또한, 측정하는 초기 저항값 및 보관 후 저항값은, 엄밀하게는 도전 패턴과 투명전극의 접촉저항의 값에, 도전 패턴의 저항값 및 투명전극의 저항값이 가산된 것이다. 그러나, 도전 패턴의 저항값 및 투명전극의 저항값은 접촉저항의 값과 비교해서 매우 작기 때문에, 초기 저항값 및 보관 후 저항값으로써 접촉저항의 변화율을 평가하는 것이 가능하다.In addition, the measured initial resistance value and the resistance value after storage are strictly obtained by adding the resistance value of the conductive pattern and the resistance value of the transparent electrode to the value of the contact resistance between the conductive pattern and the transparent electrode. However, since the resistance value of the conductive pattern and the resistance value of the transparent electrode are very small compared to the value of the contact resistance, it is possible to evaluate the rate of change of the contact resistance as the initial resistance value and the resistance value after storage.
각 실시예 및 비교예에서 사용한 재료는 이하와 같다.Materials used in each Example and Comparative Example are as follows.
[금속 입자(A)][Metal particle (A)]
체적 평균 입자지름이 1.0㎛인 Ag 입자Ag particles with a volume average particle diameter of 1.0㎛
체적 평균 입자지름이 1.0㎛인 Au 입자.Au particles having a volume average particle diameter of 1.0 μm.
[카본 입자(B)][Carbon particle (B)]
1차 입자의 체적 평균 입자지름이 0.05㎛인 카본 입자(입자 전체에 차지하는 탄소의 비율: 99질량%).Carbon particles having a volume average particle diameter of the primary particles of 0.05 µm (the ratio of carbon to the entire particle: 99% by mass).
[불포화 이중결합을 갖는 화합물(C)][Compound (C) having an unsaturated double bond]
(모노머)(Monomer)
라이트 아크릴레이트 BP-4EA(이하, 「BP-4EA」; 교에이샤 카가쿠(주)제)Light acrylate BP-4EA (hereinafter, "BP-4EA"; manufactured by Kyoeisha Chemical Co., Ltd.)
(합성예 1: 화합물(C-1))(Synthesis Example 1: Compound (C-1))
공중합 비율(질량기준): 에틸아크릴레이트(이하, 「EA」)/메타크릴산 2-에틸헥실(이하, 「2-EHMA」)/스티렌(이하, 「St」)/글리시딜메타크릴레이트(이하, 「GMA」)/아크릴산(이하, 「AA」)=20/40/20/5/15Copolymerization ratio (mass basis): ethyl acrylate (hereinafter referred to as "EA")/methacrylic acid 2-ethylhexyl (hereinafter referred to as "2-EHMA")/styrene (hereinafter referred to as "St")/glycidyl methacrylate (Hereinafter "GMA") / acrylic acid (hereinafter "AA") = 20/40/20/5/15
질소분위기의 반응용기 중에 150g의 DMEA를 투입하고, 오일 배스를 이용하여 80℃까지 승온했다. 이것에 20g의 EA, 40g의 2-EHMA, 20g의 St, 15g의 AA, 0.8g의 2,2'-아조비스이소부틸로니트릴 및 10g의 DMEA로 이루어지는 혼합물을 1시간 걸쳐서 적하했다. 적하 종료 후, 6시간 더 중합반응을 행하였다. 그 후에 1g의 하이드로퀴논모노메틸에테르를 첨가하고, 중합반응을 정지했다. 계속해서, 5g의 GMA, 1g의 트리에틸벤질암모늄클로라이드 및 10g의 DMEA로 이루어지는 혼합물을 0.5시간 걸쳐서 적하했다. 적하 종료 후, 2시간 더 부가반응을 행하였다. 얻어진 반응 용액을 메탄올로 정제함으로써 미반응 불순물을 제거하고, 또한 24시간 진공 건조함으로써 화합물(C-1)을 얻었다. 얻어진 화합물(C-1)의 산가는 103mgKOH/g이었다.150 g of DMEA was put into a reaction vessel in a nitrogen atmosphere, and the temperature was raised to 80°C using an oil bath. A mixture consisting of 20 g of EA, 40 g of 2-EHMA, 20 g of St, 15 g of AA, 0.8 g of 2,2'-azobisisobutylonitrile and 10 g of DMEA was added dropwise over 1 hour. After completion of the dropwise addition, the polymerization reaction was further carried out for 6 hours. After that, 1 g of hydroquinone monomethyl ether was added to stop the polymerization reaction. Then, a mixture consisting of 5 g of GMA, 1 g of triethylbenzylammonium chloride and 10 g of DMEA was added dropwise over 0.5 hours. After completion of the dropwise addition, an addition reaction was performed for another 2 hours. Unreacted impurities were removed by purifying the obtained reaction solution with methanol, and further, the compound (C-1) was obtained by vacuum drying for 24 hours. The acid value of the obtained compound (C-1) was 103 mgKOH/g.
(합성예 2: 화합물(C-2))(Synthesis Example 2: Compound (C-2))
공중합 비율(질량기준): 에틸렌옥사이드 변성 비스페놀A 디아크릴레이트(FA-324A; 히타치 카세이 고교(주)제)/EA/GMA/AA=60/25/10/5Copolymerization ratio (mass basis): Ethylene oxide-modified bisphenol A diacrylate (FA-324A; Hitachi Kasei Kogyo Co., Ltd.)/EA/GMA/AA=60/25/10/5
질소분위기의 반응 용기 중에 150g의 DMEA를 투입하고, 오일 배스를 이용하여 80℃까지 승온했다. 이것에 60g의 에틸렌옥사이드 변성 비스페놀A 디아크릴레이트, 25g의 EA, 5g의 AA, 0.8g의 2,2'-아조비스이소부틸로니트릴 및 10g의 DMEA로 이루어지는 혼합물을 1시간 걸쳐서 적하했다. 적하 종료 후, 6시간 더 중합반응을 행하였다. 그 후에 1g의 하이드로퀴논모노메틸에테르를 첨가하고, 중합반응을 정지했다. 계속해서, 10g의 GMA, 1g의 트리에틸벤질암모늄클로라이드 및 10g의 DMEA로 이루어지는 혼합물을 0.5시간 걸쳐서 적하했다. 적하 종료 후, 2시간 더 부가반응을 행하였다. 얻어진 반응 용액을 메탄올로 정제함으로써 미반응 불순물을 제거하고, 또한 24시간 진공 건조함으로써 카르복실기 및 불포화 이중결합을 갖는 화합물(C-2)을 얻었다. 얻어진 화합물(C-2)의 산가는 1.4mgKOH/g이었다.150 g of DMEA was put into a reaction vessel in a nitrogen atmosphere, and the temperature was raised to 80°C using an oil bath. A mixture consisting of 60 g of ethylene oxide-modified bisphenol A diacrylate, 25 g of EA, 5 g of AA, 0.8 g of 2,2'-azobisisobutylonitrile and 10 g of DMEA was added dropwise over 1 hour. After completion of the dropwise addition, the polymerization reaction was further carried out for 6 hours. After that, 1 g of hydroquinone monomethyl ether was added to stop the polymerization reaction. Subsequently, a mixture consisting of 10 g of GMA, 1 g of triethylbenzylammonium chloride and 10 g of DMEA was added dropwise over 0.5 hours. After completion of the dropwise addition, an addition reaction was performed for another 2 hours. The resulting reaction solution was purified with methanol to remove unreacted impurities, and further vacuum-dried for 24 hours to obtain a compound (C-2) having a carboxyl group and an unsaturated double bond. The acid value of the obtained compound (C-2) was 1.4 mgKOH/g.
(합성예 3: 화합물(C-3))(Synthesis Example 3: Compound (C-3))
질소분위기의 반응 용액 중에 123g의 RE-310S(니혼카야쿠(주)제), 47g의 AA, 0.3g의 하이드로퀴논모노메틸에테르 및 0.5g의 트리페닐포스핀을 투입하고, 98℃의 온도에서 반응액의 산가가 0.5mgKOH/g 이하가 될 때까지 반응시켜 화합물(C-3)을 얻었다. 얻어진 화합물(C-3)의 산가는 0.4mgKOH/g이었다.123 g of RE-310S (manufactured by Nihon Kayaku Co., Ltd.), 47 g of AA, 0.3 g of hydroquinone monomethyl ether and 0.5 g of triphenylphosphine were added to the reaction solution in a nitrogen atmosphere, and at a temperature of 98°C Compound (C-3) was obtained by reacting until the acid value of the reaction solution became 0.5 mgKOH/g or less. The acid value of the obtained compound (C-3) was 0.4 mgKOH/g.
(합성예 4: 화합물(C-4))(Synthesis Example 4: Compound (C-4))
질소분위기의 반응 용액 중에 164g의 카르비톨아세테이트, 287g의 EOCN-103S (니혼카야쿠(주)제), 96g의 AA, 2g의 2,6-디-tert-부틸-p-크레졸 및 2g의 트리페닐포스핀을 투입하고, 98℃의 온도에서 반응액의 산가가 0.5mgKOH/g 이하가 될 때까지 반응시켜 에폭시카르복실레이트 화합물을 얻었다. 계속해서, 이 반응액에 57g의 카르비톨아세테이트 및 67g의 테트라히드로 무수 프탈산을 투입하고, 95℃로 4시간 반응시켜 화합물(C-4)을 얻었다. 얻어진 화합물(C-4)의 산가는 104mgKOH/g이었다.In the reaction solution in a nitrogen atmosphere, 164 g of carbitol acetate, 287 g of EOCN-103S (manufactured by Nihon Kayaku Co., Ltd.), 96 g of AA, 2 g of 2,6-di-tert-butyl-p-cresol and 2 g of tree Phenylphosphine was added and reacted at a temperature of 98° C. until the acid value of the reaction solution became 0.5 mgKOH/g or less, thereby obtaining an epoxy carboxylate compound. Subsequently, 57 g of carbitol acetate and 67 g of tetrahydrophthalic anhydride were added to the reaction solution, followed by reaction at 95° C. for 4 hours to obtain compound (C-4). The acid value of the obtained compound (C-4) was 104 mgKOH/g.
(합성예 5: 화합물(C-5))(Synthesis Example 5: Compound (C-5))
질소분위기의 반응 용기 중에 123g의 RE-310S(니혼카야쿠(주)제), 47g의 AA, 0.3g의 하이드로퀴논모노메틸에테르 및 0.5g의 트리페닐포스핀을 투입하고, 98℃의 온도에서 반응액의 산가가 0.5mgKOH/g 이하가 될 때까지 반응시켜 에폭시카르복실레이트 화합물을 얻었다. 그 후, 이 반응 용액에 252g의 카르비톨아세테이트, 89g의 2,2-비스(디메티롤)-프로피온산, 0.4g의 2-메틸하이드로퀴논 및 47g의 스피로 글리콜을 첨가해 45℃로 승온했다. 이 용액에 162g의 트리메틸헥사메틸렌디이소시아네이트를 반응온도가 65℃를 초과하지 않도록 서서히 적하했다. 적하 종료 후, 반응온도를 80℃로 상승시키고, 적외 흡수 스펙트럼 측정법에 의해 2250cm-1 부근의 흡수가 없어질 때까지 6시간 반응시켜 화합물(C-5)를 얻었다. 얻어진 화합물(C-5)의 산가는 80.0mgKOH/g이었다.In a reaction vessel in a nitrogen atmosphere, 123 g of RE-310S (manufactured by Nihon Kayaku Co., Ltd.), 47 g of AA, 0.3 g of hydroquinone monomethyl ether and 0.5 g of triphenylphosphine were added, and at a temperature of 98° C. The reaction was carried out until the acid value of the reaction solution became 0.5 mgKOH/g or less to obtain an epoxy carboxylate compound. Thereafter, 252 g of carbitol acetate, 89 g of 2,2-bis(dimethyrol)-propionic acid, 0.4 g of 2-methylhydroquinone and 47 g of spiro glycol were added to the reaction solution, and the temperature was raised to 45°C. To this solution, 162 g of trimethylhexamethylene diisocyanate was gradually added dropwise so that the reaction temperature did not exceed 65°C. After completion of the dropwise addition, the reaction temperature was raised to 80° C., and reacted for 6 hours until absorption in the vicinity of 2250 cm -1 disappeared by infrared absorption spectrometry to obtain compound (C-5). The acid value of the obtained compound (C-5) was 80.0 mgKOH/g.
(합성예 6: 화합물(C-6))(Synthesis Example 6: Compound (C-6))
질소 분위기의 반응 용기에 300g의 데나콜 EX-203(나가세 켐텍스(주)제)의 아크릴산 부가물(분자량: 368), 500g의 DMEA, 0.5g의 2-메틸하이드로퀴논 및 200g의 2,2-비스(히드록시메틸)프로피온산을 투입하고, 45℃로 승온했다. 이 용액에 201.3g의 톨루엔디이소시아네이트를 반응온도가 50℃를 초과하지 않도록 서서히 적하했다. 적하 종료 후, 반응온도를 80℃로 상승시키고, 적외 흡수 스펙트럼 측정법에 의해 2250cm-1 부근의 흡수가 없어질 때까지 6시간 반응시켰다. 이 용액에 120g의 글리시딜메타크릴레이트를 첨가해 95℃로 승온해서 6시간 반응시켜 화합물(C-6)을 얻었다. 얻어진 화합물(C-6)의 산가는 83mgKOH/g이었다.In a reaction vessel in a nitrogen atmosphere, 300 g of Denacol EX-203 (manufactured by Nagase Chemtex Co., Ltd.) acrylic acid adduct (molecular weight: 368), 500 g of DMEA, 0.5 g of 2-methylhydroquinone and 200 g of 2,2 -Bis(hydroxymethyl)propionic acid was added, and the temperature was raised to 45°C. To this solution, 201.3 g of toluene diisocyanate was gradually added dropwise so that the reaction temperature did not exceed 50°C. After the dropwise addition, the reaction temperature was raised to 80° C., and the reaction was carried out for 6 hours until absorption in the vicinity of 2250 cm -1 disappeared by an infrared absorption spectrum measurement method. To this solution, 120 g of glycidyl methacrylate was added, the temperature was raised to 95°C, and reacted for 6 hours to obtain compound (C-6). The acid value of the obtained compound (C-6) was 83 mgKOH/g.
[광중합 개시제(D)][Photopolymerization initiator (D)]
IRGACURE(등록상표) OXE-01(이하, 「OXE-01」; 치바재팬(주)제)IRGACURE (registered trademark) OXE-01 (hereinafter referred to as ``OXE-01''; manufactured by Chiba Japan)
IRGACURE(등록상표) 369(이하, 「IC-369」; 치바재팬(주)제).IRGACURE (registered trademark) 369 (hereinafter referred to as "IC-369"; manufactured by Chiba Japan Co., Ltd.).
[용제(E)][Solvent (E)]
DMEA(토쿄 카세이 고교(주)제).DMEA (manufactured by Tokyo Kasei High School Co., Ltd.).
[투명전극][Transparent electrode]
ITO 필름(니토 덴코(주)제)ITO film (manufactured by Nito Denko Co., Ltd.)
은나노 와이어 필름(히타치가세이(주)제).Silver nano wire film (manufactured by Hitachi Chemical Co., Ltd.).
(실시예 1)(Example 1)
100mL 클린 보틀에 10.0g의 화합물(C-1), 0.50g의 OXE-01, 5.0g의 DMEA 및 2.0g의 BP-4EA를 넣고, 자전-공전 진공 믹서 "아와토리 렌타로" ARE-310(등록상표; (주)신키제)로 혼합하여 17.5g의 수지 용액(고형분 71.4질량%)을 얻었다.In a 100 mL clean bottle, 10.0 g of compound (C-1), 0.50 g of OXE-01, 5.0 g of DMEA, and 2.0 g of BP-4EA were put, and the rotating-orbital vacuum mixer "Awatori Rentaro" ARE-310 It mixed with (registered trademark; manufactured by Shinki Co., Ltd.) to obtain 17.5 g of a resin solution (solid content 71.4 mass%).
얻어진 17.5g의 수지 용액, 85.0g의 Ag 입자 및 2.5g의 카본 입자(B)를 혼합하고, 3단 롤러 밀(EXAKT M-50;EXAKT사제)을 이용하여 혼련하여 105.0g의 도전 페이스트를 얻었다.The obtained 17.5 g of resin solution, 85.0 g of Ag particles and 2.5 g of carbon particles (B) were mixed, and kneaded using a three-stage roller mill (EXAKT M-50; manufactured by EXAKT) to obtain 105.0 g of a conductive paste. .
얻어진 도전 페이스트를 이용하여 도전 패턴의 패터닝성, 비저항 및 ITO와의 접속 신뢰성을 각각 평가했다. 패터닝성의 평가 지표가 되는 현상 가능한 L/S의 값은 15/15㎛이며, 양호한 패턴 가공이 되어 있는 것이 확인되었다. 도전 패턴의 비저항은 5.5×10-5Ω㎝이었다. ITO와의 접속 신뢰성 평가에 있어서의 저항 변화율은 1.03이며, 양호했다.Using the obtained conductive paste, the patterning property, specific resistance, and connection reliability with ITO of the conductive pattern were evaluated, respectively. The value of the developable L/S as an evaluation index of patterning property was 15/15 µm, and it was confirmed that a good patterning was performed. The specific resistance of the conductive pattern was 5.5×10 -5 Ωcm. The resistance change rate in the connection reliability evaluation with ITO was 1.03, and it was favorable.
(실시예 2∼14)(Examples 2 to 14)
표 1에 나타내는 조성의 도전 페이스트를 실시예 1과 같은 방법으로 제조하고, 실시예 1과 같은 평가를 행한 결과를 표 2에 나타낸다.The conductive paste of the composition shown in Table 1 was prepared in the same manner as in Example 1, and the results of evaluation in the same manner as in Example 1 are shown in Table 2.
(비교예 1∼4)(Comparative Examples 1 to 4)
표 1에 나타내는 조성의 도전 페이스트를 실시예 1과 같은 방법으로 제조하고, 실시예 1과 같은 평가를 행한 결과를 표 2에 나타낸다.The conductive paste of the composition shown in Table 1 was prepared in the same manner as in Example 1, and the results of evaluation in the same manner as in Example 1 are shown in Table 2.
실시예 1∼14의 도전 페이스트에서는 모두 패터닝성, 비저항 및 ITO와의 접속 신뢰성이 우수한 도전 패턴을 제조할 수 있었다. 한편, 비교예 1의 도전 페이스트에서는 고온 고습도 하에 있어서 ITO와의 접속 신뢰성이 저하하고, 비교예 2 및 4의 도전 페이스트에서는 현상 중에 패턴이 흘러서 미세한 배선을 제조할 수 없으며, 또한 비교예 3의 도전 페이스트를 이용하여 제조한 도전 패턴은 도전성을 나타내지 않았다.In all of the conductive pastes of Examples 1 to 14, a conductive pattern excellent in patterning property, specific resistance, and connection reliability with ITO could be produced. On the other hand, in the conductive paste of Comparative Example 1, the connection reliability with ITO is lowered under high temperature and high humidity, and in the conductive pastes of Comparative Examples 2 and 4, a pattern flows during development, so that fine wiring cannot be manufactured, and the conductive paste of Comparative Example 3 The conductive pattern prepared by using did not show conductivity.
(산업상의 이용 가능성)(Industrial availability)
본 발명의 도전 페이스트는 터치패널용의 주위배선 등의 도전 패턴의 제조를 위해서 적합하게 이용할 수 있다.The conductive paste of the present invention can be suitably used for manufacturing a conductive pattern such as peripheral wiring for a touch panel.
A : 투광 패턴A: Light transmission pattern
Claims (6)
카본 입자(B),
불포화 이중결합을 갖는 화합물(C),
광중합 개시제(D), 및
용제(E)를 함유하고,
상기 카본 입자(B)에 대한 상기 금속 입자(A)의 질량비가 100∼1900이고, 상기 광중합 개시제(D)로서 옥심에스테르계 화합물을 함유하며, 상기 불포화 이중결합을 갖는 화합물(C)의 산가가 30∼250mgKOH/g이며, ITO로 이루어지는 투명전극을 구비한 터치패널용 도전 패턴을 형성하기 위한 도전 페이스트.Metal particles (A),
Carbon particles (B),
Compound (C) having an unsaturated double bond,
Photopolymerization initiator (D), and
Contains a solvent (E),
The mass ratio of the metal particles (A) to the carbon particles (B) is 100 to 1900, the photopolymerization initiator (D) contains an oxime ester compound, and the acid value of the compound (C) having an unsaturated double bond A conductive paste for forming a conductive pattern for a touch panel having a transparent electrode of 30 to 250 mgKOH/g and made of ITO.
상기 금속 입자(A)의 체적 평균 입자지름이 0.1∼10㎛이며, 또한
상기 카본 입자(B)의 1차 입자의 체적 평균 입자지름이 0.005∼0.5㎛인, 도전 페이스트.The method of claim 1,
The volume average particle diameter of the metal particles (A) is 0.1 to 10 μm, and
The conductive paste, wherein the volume average particle diameter of the primary particles of the carbon particles (B) is 0.005 to 0.5 µm.
상기 도전 패턴이 터치패널의 주위배선인, 터치패널.The method of claim 4,
The conductive pattern is a peripheral wiring of the touch panel, a touch panel.
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