KR102196796B1 - 마스크 지지 템플릿과 그의 제조 방법 및 프레임 일체형 마스크의 제조 방법 - Google Patents

마스크 지지 템플릿과 그의 제조 방법 및 프레임 일체형 마스크의 제조 방법 Download PDF

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KR102196796B1
KR102196796B1 KR1020190009440A KR20190009440A KR102196796B1 KR 102196796 B1 KR102196796 B1 KR 102196796B1 KR 1020190009440 A KR1020190009440 A KR 1020190009440A KR 20190009440 A KR20190009440 A KR 20190009440A KR 102196796 B1 KR102196796 B1 KR 102196796B1
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KR1020190009440A
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KR20200061277A (ko
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이병일
장택용
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주식회사 오럼머티리얼
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Priority to CN201911156878.3A priority Critical patent/CN111224019B/zh
Priority to TW108142560A priority patent/TWI758661B/zh
Publication of KR20200061277A publication Critical patent/KR20200061277A/ko
Priority to KR1020200171694A priority patent/KR102314852B1/ko
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    • H01L51/56
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L51/0018
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
KR1020190009440A 2018-11-23 2019-01-24 마스크 지지 템플릿과 그의 제조 방법 및 프레임 일체형 마스크의 제조 방법 KR102196796B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201911156878.3A CN111224019B (zh) 2018-11-23 2019-11-22 掩模支撑模板和其制造方法及掩模与框架连接体的制造方法
TW108142560A TWI758661B (zh) 2018-11-23 2019-11-22 掩模支撐模板和其製造方法及框架一體型掩模的製造方法
KR1020200171694A KR102314852B1 (ko) 2018-11-23 2020-12-09 마스크 지지 템플릿 및 프레임 일체형 마스크

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20180145931 2018-11-23
KR1020180145931 2018-11-23

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KR1020200171694A Division KR102314852B1 (ko) 2018-11-23 2020-12-09 마스크 지지 템플릿 및 프레임 일체형 마스크

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KR20200061277A KR20200061277A (ko) 2020-06-02
KR102196796B1 true KR102196796B1 (ko) 2020-12-30

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KR1020190009440A KR102196796B1 (ko) 2018-11-23 2019-01-24 마스크 지지 템플릿과 그의 제조 방법 및 프레임 일체형 마스크의 제조 방법
KR1020200171694A KR102314852B1 (ko) 2018-11-23 2020-12-09 마스크 지지 템플릿 및 프레임 일체형 마스크

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Families Citing this family (7)

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Publication number Priority date Publication date Assignee Title
KR102442459B1 (ko) * 2020-10-07 2022-09-14 주식회사 오럼머티리얼 마스크 지지 템플릿의 제조 방법, 마스크 지지 템플릿 및 프레임 일체형 마스크의 제조 방법
KR102435236B1 (ko) * 2020-10-07 2022-08-24 주식회사 효산 마스크의 제조 방법 및 마스크
KR102435235B1 (ko) * 2020-10-07 2022-08-24 주식회사 효산 마스크의 제조 방법 및 마스크
CN114481018A (zh) * 2020-10-23 2022-05-13 悟劳茂材料公司 掩模制造方法
KR102597891B1 (ko) * 2020-12-01 2023-11-06 주식회사 효산 프레임 일체형 마스크의 제조 시스템 및 프레임 일체형 마스크의 제조 방법
TWD215838S (zh) 2021-05-07 2021-12-01 景美科技股份有限公司 框架之部分
KR102660655B1 (ko) * 2023-01-13 2024-04-26 주식회사 오럼머티리얼 마스크와 지지부의 연결체 및 그 제조 방법

Citations (1)

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JP2006152396A (ja) * 2004-11-30 2006-06-15 Sony Corp メタルマスク、電鋳用マスク原版及びマスター原版の製造方法

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KR200183547Y1 (ko) * 1997-12-24 2000-06-01 김영환 반도체 다이 본딩장치
KR100534580B1 (ko) * 2003-03-27 2005-12-07 삼성에스디아이 주식회사 표시장치용 증착 마스크 및 그의 제조방법
JP4985227B2 (ja) * 2007-08-24 2012-07-25 大日本印刷株式会社 蒸着マスク、蒸着マスク装置、蒸着マスクの製造方法、蒸着マスク装置の製造方法、および、蒸着マスク用シート状部材の製造方法
WO2012004951A1 (ja) * 2010-07-09 2012-01-12 三井化学株式会社 ペリクル及びそれに用いるマスク接着剤
KR102250047B1 (ko) * 2014-10-31 2021-05-11 삼성디스플레이 주식회사 마스크 프레임 조립체, 그 제조 방법 및 유기 발광 표시 장치의 제조 방법
KR102082784B1 (ko) * 2014-12-11 2020-03-02 삼성디스플레이 주식회사 마스크 프레임 조립체, 그 제조 방법 및 유기 발광 표시 장치의 제조 방법
WO2017014016A1 (ja) * 2015-07-17 2017-01-26 凸版印刷株式会社 メタルマスク用基材の製造方法、蒸着用メタルマスクの製造方法、メタルマスク用基材、および、蒸着用メタルマスク
WO2017045122A1 (en) * 2015-09-15 2017-03-23 Applied Materials, Inc. A shadow mask for organic light emitting diode manufacture
KR101786391B1 (ko) * 2016-10-06 2017-11-16 주식회사 포스코 증착용 마스크로 사용되는 합금 금속박, 증착용 마스크 및 이들의 제조방법과 이를 이용한 유기 발광 소자 제조방법

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KR20200143660A (ko) 2020-12-24
KR102314852B1 (ko) 2021-10-18
TWI758661B (zh) 2022-03-21
TW202021173A (zh) 2020-06-01
KR20200061277A (ko) 2020-06-02

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