KR102180284B1 - Composition for removing silicone polymer and manufacturing method of thin film substrate using the same - Google Patents

Abstract

The present invention relates to a composition for removing a silicone resin and a method of manufacturing a thin film substrate using the same, and more particularly, to a composition for removing a silicone resin containing a polar aprotic solvent and a fluorine compound, and a method of manufacturing a thin film substrate using the same, The silicone resin removal composition has excellent cleaning ability, and the method of manufacturing the thin film substrate can prevent damage to the thin film substrate.

Description

Composition for removing silicone resin and a method of manufacturing a thin film substrate using the same {Composition for removing silicone polymer and manufacturing method of thin film substrate using the same}

The present invention relates to a composition for removing a silicone resin and a method of manufacturing a thin film substrate using the same, and more particularly, to a composition for removing a silicone resin including a polar aprotic solvent and a fluorine compound, and a method of manufacturing a thin film substrate using the same.

In the semiconductor device manufacturing process, after forming an electronic circuit or the like on the surface of a semiconductor wafer (hereinafter, simply referred to as ``wafer''), back grinding (so-called back grinding) of the wafer is performed to reduce the thickness of the wafer. There are cases. In this case, in order to protect the circuit surface of the wafer, fix the wafer, and the like, a support is usually attached to the circuit surface of the wafer through a silicon resin. When the support is attached to the circuit surface of the wafer, a wafer having a thinner thickness after grinding the back surface of the wafer can be reinforced, and a back electrode or the like can be formed on the grinding surface of the wafer.

When the processes such as grinding the back surface of the wafer and forming the back electrode are completed, the support is removed from the circuit surface of the wafer, the silicon resin attached to the electronic component is peeled off and removed, and the wafer is cut to produce a chip.

On the other hand, recently, a chip stacking technology using a through electrode (for example, a silicon through electrode) installed through a wafer has been developed. According to this chip stacking technique, since electronic circuits of a plurality of chips are electrically connected by using through electrodes instead of conventional wires, high integration of chips and high speed operation can be achieved. In the case of using this chip lamination technique, the back side grinding of the wafer is often performed in order to reduce the thickness of an assembly in which a plurality of chips are stacked, and therefore, the case of using a silicone resin for a support or an electronic component increases.

However, since the support is usually attached to the circuit surface of the wafer through the silicon resin attached to the electronic component, and then thermally cured to securely attach the wafer and the support, the silicon resin attached to the electronic component is peeled off. In this case, there occurs a case where the silicone resin adhered to the cured electronic component remains on the circuit surface of the support and the wafer. Therefore, there is a need for a means for efficiently removing the silicone resin adhered to the cured electronic component remaining on the support and the wafer circuit surface.

Korean Patent Laid-Open No. 10-2014-0060389 discloses a composition for removing a silicone-based resin attached to an electronic component, but the prior art seems to have room for improvement in terms of removal speed of the silicone-based resin.

In addition, Korean Patent Laid-Open Nos. 10-2013-0008695 and 10-2013-0008692 disclose a substrate processing method for thinning the thickness of a wafer, but the process is complicated, and it is necessary to remove the silicon-based resin remaining on the substrate. There is a problem that is not easy.

Republic of Korea Patent Publication No. 10-2014-0060389 Republic of Korea Patent Publication No. 10-2013-0008695 Republic of Korea Patent Publication No. 10-2013-0008692

An object of the present invention is to provide a composition for removing a silicone resin having an excellent removal rate of the silicone resin.

In addition, an object of the present invention is to provide a method for manufacturing a thin film substrate capable of thinning a substrate by applying a silicon release layer and a silicon adhesive between a substrate and a carrier wafer.

In addition, an object of the present invention is to remove the silicon-based residue remaining on the substrate and the carrier wafer by using the silicon-based resin removal composition after separating the substrate and the carrier wafer during the thin film substrate manufacturing step.

To achieve the above object,

The present invention provides a composition for removing a silicone-based resin comprising a polar aprotic solvent and a fluorine compound.

In addition, the present invention comprises the steps of: (1) bonding the substrate and the carrier wafer by applying a silicon release layer and a silicon adhesive between the substrate and the carrier wafer;

(2) thinning the substrate;

(3) attaching a protective tape to the thinned substrate;

(4) separating the thinned substrate and the carrier wafer to which the protective tape is attached; And

(5) It provides a thin film substrate manufacturing method comprising the step of cleaning the separated substrate and the carrier wafer with the silicone-based resin removal composition.

The silicone-based resin removal composition of the present invention has an excellent decomposition rate of the silicone-based resin, and thus can effectively remove the silicone-based resin remaining on the carrier wafer and the substrate in processes such as grinding the back surface of a semiconductor substrate and forming a back electrode.

In addition, in the method of manufacturing a thin film substrate of the present invention, by forming a silicon release layer and a silicon adhesive between the substrate and the carrier wafer, the substrate can be thinned and damage to the substrate can be prevented.

1 is a schematic diagram showing a method of manufacturing a thin film substrate of the present invention.
2 is a schematic diagram showing a cross section of a thin film substrate manufactured by the method of Experimental Example 1-1.
3 is a schematic diagram showing a cross section of a thin film substrate manufactured by the method of Experimental Example 1-2.

Hereinafter, the present invention will be described in more detail.

The present invention relates to a composition for removing a silicone-based resin comprising a polar aprotic solvent and a fluorine compound.

The polar aprotic solvent expands the cured silicone resin and dissolves the fluorine compound. In addition, since it is polar, it dissolves a fluorine compound and a silicone resin well, and because it is aprotic, it stabilizes the reaction intermediate between a fluorine ion and a silicone resin well, thereby promoting the decomposition reaction of the silicone resin.

In the present invention, the polar aprotic solvent is ketone, acetate, amide, pyridine, morpholine, piperazine, pyrrolidone, urea, oxazolidinone, phosphate, sulfoxide, nitrate. At least one selected from the group consisting of reel-based and carbonate-based solvents is used.

The kind of the ketone-based solvent is not particularly limited, but it is preferable to include the following Chemical Formula 1.

[Formula 1]

The R ₁ and R ₂ are each the same or different, and a linear or branched aliphatic hydrocarbon having 1 to 18 carbon atoms,

The sum of carbon atoms of R ₁ and R ₂ is 2 or more and less than 30.

The acetate-based solvent is not particularly limited in kind, but methyl acetate, ethyl acetate, propyl acetate, isopropyl acetate, butyl acetate, isobutyl acetate, sec-butyl acetate, amyl acetate, pentyl acetate, isopentyl acetate, It is preferable to use at least one selected from the group consisting of benzyl acetate, phenyl acetate, ethoxyethyl acetate, methoxybutyl acetate, propylene glycol monomethyl ether acetate, vinyl acetate and ethyl ethoxypropionate.

The type of the amide-based solvent is not particularly limited, but it is preferable to use at least one selected from the group consisting of dimethylformamide, dimethylpropanamide, and dimethylbutanamide.

The type of the pyri-step solvent is not particularly limited, but it is preferable to include the following Chemical Formula 2.

[Formula 2]

The R ₃ to R ₅ are each the same or different, hydrogen, a linear or branched aliphatic hydrocarbon having 1 to 10 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, a halogen, an aldehyde group, an acetaldehyde group, a cyanide group, or a methyl sulfide group to be.

Therefore, the pyridine solvent is pyridine, 2-methylpyridine, 3-methylpyridine, 4-methylpyridine, 4-ethylpyridine, 4-propylpyridine, 4-isopropylpyridine, 4-amylpyridine, 2,3-ruti Din, 2,4-lutidine, 2,5-lutidine, 3,4-lutidine, 3,5-lutidine, and 2,4,6-trimethylpyridine may be one or more selected from the group consisting of pyridine.

The type of the morpholine-based solvent is not particularly limited, but it is preferable to include the following Chemical Formula 3.

[Formula 3]

R ₆ is hydrogen, a tertiary amine including a linear or branched aliphatic hydrocarbon having 1 to 6 carbon atoms, a cyanide group, and an aliphatic hydrocarbon having 1 to 4 carbon atoms,

Phenyl substituted with an aliphatic hydrocarbon having 1 to 4 carbon atoms, a halogen, a cyanide group or an aldehyde group, or

It is a pyridine substituted with an aliphatic hydrocarbon having 1 to 4 carbon atoms, a halogen, a cyanide group, or an aldehyde group.

The type of the piperazine-based solvent is not particularly limited, but it is preferable to include the following Chemical Formula 4.

[Formula 4]

Above R ₇ And R ₈ is each the same or differently, a tertiary amine containing hydrogen, a linear or branched aliphatic hydrocarbon having 1 to 6 carbon atoms, a cyanide group, an aliphatic hydrocarbon having 1 to 4 carbon atoms,

Phenyl substituted with an aliphatic hydrocarbon having 1 to 4 carbon atoms, a halogen, a cyanide group or an aldehyde group, or

It is a pyridine substituted with an aliphatic hydrocarbon having 1 to 4 carbon atoms, a halogen, a cyanide group, or an aldehyde group.

The type of the pyrrolidone-based solvent is not particularly limited, but at least one selected from the group consisting of methylpyrrolidone, ethylpyrrolidone and vinylpyrrolidone is preferably used.

The type of the urea-based solvent is not particularly limited, but it is preferable to include the following Chemical Formula 5.

[Formula 5]

R ₉ above And R ₁₀ is the same as or different from each other, an aliphatic hydrocarbon having 1 to 6 carbon atoms, a phenyl group, or

It is an aliphatic hydrocarbon having 1 to 4 carbon atoms in which a methoxy group or a dimethylamino group is substituted.

The type of the oxazolidinone-based solvent is not particularly limited, but it is preferable to include the following Chemical Formula 6.

[Formula 6]

R ₁₁ is an aliphatic hydrocarbon having 1 to 6 carbon atoms, a phenyl group, or

It is an aliphatic hydrocarbon having 1 to 4 carbon atoms in which a methoxy group or a dimethylamino group is substituted.

The type of the phosphate-based solvent is not particularly limited, but it is preferable to include the following Formula 7.

[Formula 7]

The R ₁₂ to R ₁₄ are each the same or differently, a linear or branched aliphatic hydrocarbon having 1 to 8 carbon atoms, an alkoxy group having 3 to 8 carbon atoms, a phenyl group, a phenyl group or halogen substituted with an aliphatic hydrocarbon having 1 to 4 carbon atoms It is a substituted C2-4 aliphatic hydrocarbon.

The type of the sulfoxide-based solvent is not particularly limited, but it is preferable to use at least one selected from the group consisting of dimethyl sulfoxide, dibutyl sulfoxide, diphenyl sulfoxide, dibenzyl sulfoxide and methylphenyl sulfoxide. .

The type of the nitrile solvent is not particularly limited, but at least one selected from the group consisting of propionitryl, butyronitryl, isobutyronitryl, acetonitrile, trimethylacetonitrile, and phenylacetonitrile is used. It is desirable to do.

In addition, the type of the carbonate-based solvent is not particularly limited, but at least one selected from the group consisting of dimethyl carbonate, diethyl carbonate, diphenyl carbonate, dibenzyl carbonate, ethylene carbonate, propylene carbonate and vinylene carbonate is used. It is desirable.

The polar aprotic solvent is included in an amount of 70 to 99.9% by weight, preferably 80 to 99% by weight, based on the total weight of the silicone-based resin removal composition. If the polar aprotic solvent is contained in an amount of less than 70% by weight, the metal part of the circuit surface of the substrate may be corroded. If it exceeds 99.9% by weight, the silicone resin attached to the electronic component cannot be effectively removed. Problems can arise.

In addition, the fluorine compound serves to reduce the molecular weight of the silicone resin attached to electronic parts.

The fluorine compound is preferably at least one selected from the group consisting of alkyl ammonium fluoride, alkyl phosphonium fluoride, and alkyl sulfonium fluoride.

It is preferable that the alkyl ammonium fluoride includes the following Formula 8.

[Formula 8]

M is an integer of 0 to 15,

N is an integer of 2 to 21.

In addition, Formula 8 is preferably at least one selected from the group consisting of the following Formulas 9 to 14.

[Formula 9]

[Formula 10]

[Formula 11]

[Formula 12]

[Formula 13]

[Formula 14]

In Formulas 9 to 14, p and q may be integers of 0 to 4, respectively.

The alkyl ammonium fluoride may be specifically, for example, tetrabutylammonium fluoride, tetrabutylammonium bifluoride, tetramethylammonium fluoride, tetraethylammonium fluoride, benzyltrimethylammonium fluoride, and tetraoctylammonium fluoride. .

It is preferable that the alkyl phosphonium fluoride includes the following formula (15).

[Formula 15]

Each of R ₁₅ to R ₁₈ is the same or different, and is an aliphatic hydrocarbon having 1 to 22 carbon atoms or an aromatic hydrocarbon having 6 to 20 carbon atoms.

In addition, it is preferable that the alkylsulfonium fluoride includes the following formula (16).

[Formula 16]

Each of R ₁₉ to R ₂₁ is the same or different, and is an aliphatic hydrocarbon having 1 to 22 carbon atoms or an aromatic hydrocarbon having 6 to 20 carbon atoms.

The fluorine compound is included in an amount of 0.1 to 30% by weight, preferably 1 to 20% by weight, based on the total weight of the silicone-based resin removal composition. When the fluorine compound is contained in an amount of less than 0.1% by weight, a problem of not effectively removing the silicone resin attached to electronic parts may occur, and when it exceeds 30% by weight, the price becomes expensive and moisture As the content is increased, there is a concern that the removal performance of the silicone resin may be lowered, and a problem of corrosion of a metal part on the circuit surface of the substrate may occur.

In addition to the above components, the composition for removing silicone resins of the present invention may further include components such as corrosion inhibitors and surfactants commonly used in this field.

In addition, the present invention provides a method for manufacturing a thin film substrate.

The method of manufacturing a thin film substrate of the present invention is a method of manufacturing a thin film substrate with a thin thickness by thinning the substrate, and uses a carrier wafer serving as a support layer to make the substrate thin, and a silicon release layer and a silicon release layer between the carrier wafer and the substrate A thin film substrate can be manufactured by forming a silicone adhesive.

In more detail,

(1) bonding the substrate and the carrier wafer by applying a silicon release layer and a silicon adhesive between the substrate and the carrier wafer;

(2) thinning the substrate;

(3) attaching a protective tape to the thinned substrate;

(4) separating the thinned substrate and the carrier wafer to which the protective tape is attached; And

(5) A thin-film substrate may be manufactured, including the step of cleaning the separated substrate and the carrier wafer with the silicone-based resin removal composition of the present invention.

In the present invention, if the silicone release layer is a silicone polymer, its kind is not particularly limited.

In addition, the silicone adhesive refers to a polymer used for adhesive purposes composed of a silicone monomer or oligomer, and the type is not particularly limited.

Since the silicone adhesive has adhesive properties after application and curing, the substrate and the carrier wafer may be bonded after the silicone adhesive is cured.

The step (1) is a step of bonding the substrate and the carrier wafer by applying a silicon release layer and a silicon adhesive between the substrate and the carrier wafer.

Specifically, the method of bonding the substrate and the carrier wafer can be divided into two methods.

The first method is a method of sequentially applying a silicon release layer and a silicon adhesive on the substrate, and then bonding a carrier wafer.

In the above method, a substrate, a silicon release layer, a silicon adhesive, and a carrier wafer are sequentially stacked, and when separating the substrate and the carrier wafer in step (4), a small amount of silicon residue remains on the upper portion of the substrate, which is useful for cleaning. It has the advantage of being easy.

The second method is to apply a silicon adhesive on the top of the substrate, apply a silicon release layer on one side of the carrier wafer, and then attach the silicon release layer applied on one side of the carrier wafer to the silicon adhesive applied on the substrate. This is how to bond.

The method has the advantage of minimizing damage to the substrate that may occur in the process of thinning the substrate in step (2) and separating the substrate from the carrier wafer in step (4).

The step (2) is a step of thinning the substrate to which the carrier wafer is adhered, and the substrate may be thinned to a desired thickness using chemical mechanical polishing, wet etching, dry etching, spin etching, or a grinding wheel.

In the present invention, the substrate is preferably thinned as thin as possible, and more preferably thinned to a thickness of 50 μm or less.

The step (3) is a step of attaching the protective tape to the thinned substrate. By attaching the protective tape to the substrate, after manufacturing the thin film substrate, the process of cutting the thin film substrate into chips can be easily performed.

The step (4) is a step of separating the thinned substrate and the carrier wafer to which the protective tape is attached, and the thin film substrate may be obtained by separating the carrier wafer.

The separation method is not particularly limited, and various methods such as a physical method or a method of applying heat may be used.

In a physical method, for example, a silicon release layer formed between a substrate and a carrier wafer and a silicon adhesive may be separated by applying a crack, and the crack may be formed by applying an impact with a blade or an initiator.

Step (5) is a step of cleaning the separated substrate and the carrier wafer with the silicone resin removal composition of the present invention to finally obtain a thin film substrate.

In the above steps (1) to (3), since the silicon release layer and the silicone adhesive are formed between the substrate and the carrier wafer, a silicon release layer and a silicone adhesive, that is, a silicone resin, may remain on the surface during the separation of the substrate and the carrier wafer. I can. Therefore, a step of cleaning the silicone resin is required, and it can be cleaned using the silicone resin removal composition of the present invention.

The cleaning may be performed by immersing the separated substrate and carrier wafer in a silicone resin removal composition, and as another method, cleaning may be performed by discharging the silicone resin removal composition onto the separated substrate and carrier wafer.

After the cleaning is completed, a thinned thin film substrate can be obtained, and it can be seen that no silicon resin remains on the thin film substrate, and no damage to the substrate occurs during the manufacturing process.

Further, the substrate is a semiconductor substrate, specifically a semiconductor substrate on which semiconductor devices are formed.

In addition, the carrier wafer may be a glass substrate or a silicon substrate.

Hereinafter, the present invention will be described in more detail through examples. However, the following examples are for explaining the present invention more specifically, and the scope of the present invention is not limited by the following examples. The following examples can be appropriately modified and changed by those skilled in the art within the scope of the present invention.

<Preparation of composition for removing silicone resin>

Example 1 to 8 and Comparative example 1 to 6.

Compositions for removing silicone resins of Examples 1 to 8 were prepared by mixing the components shown in Table 1 at the corresponding composition ratio.

(Content: wt%) Fluorine compound Polar aprotic solvent Alkyl fluoride
ammonium Alkyl fluoride
Phosphonium Ketone Pyridine Morpholine Pyrrolidone Urea Example 1 3 - 97 - - - - Example 2 3 - - 97 - - - Example 3 6 - - 94 - - - Example 4 - 3 97 - - - - Example 5 - 3 - - 97 - - Example 6 - 6 - - 94 - - Example 7 3 - - - - 97 - Example 8 3 - - - - - 97

Alkyl ammonium fluoride: tetrabutylammonium fluoride (TCI)

Alkylphosphonium fluoride: tetrabutylphosphonium fluoride (synthetic product)

Ketone solvent: 2-heptanone (TCI)

Pyridine solvent: 4-methylpyridine (TCI)

Morpholine solvent: N-ethylmorpholine (TCI)

Pyrrolidone solvent: N-ethylpyrrolidone (TCI)

Urea solvent: 1,1,3,3-tetramethylurea (TCI)

Alcohol solvent: isopropyl alcohol (TCI)

In addition, the components shown in Table 2 below were mixed at the corresponding composition ratio to prepare a silicone resin removal composition of Comparative Examples 1 to 6.

The silicone-based resin removal compositions of Comparative Examples 1 to 4 used a polar aprotic solvent alone, and the silicone-based resin removal compositions of Comparative Examples 5 to 6 were used together with a polar protic solvent (alcohol-based) and a fluorine compound. .

(Content: wt%) Alkyl fluoride
ammonium Ketone Pyridine Pyrrolidone Alcoholic Comparative Example 1 - 100 - - - Comparative Example 2 - - 100 - - Comparative Example 3 - - - 100 - Comparative Example 4 - - - - 100 Comparative Example 5 3 - - - 97 Comparative Example 6 6 - - - 94

Experimental example 1. Fabrication of thin film substrates and performance test of silicone resin removal composition

1-1. Thin film substrate manufacturing

A semiconductor process was carried out, and polysiloxane, which is a silicon release layer, was coated on the semiconductor substrate on which the device was formed. Thereafter, a composition of a siloxane monomer and an initiator, which is a silicone adhesive, was applied and then thermally cured at a temperature of 200° C. to have adhesive performance. The sum of the thicknesses of the silicone release layer and the silicone adhesive resin was 80 μm. A silicon wafer, which is a carrier wafer, was attached on the silicon adhesive to bond the substrate to the silicon wafer.

Thereafter, the substrate was processed to a thickness of 50 μm using a grinding wheel, and a dicing tape was attached to the substrate to protect the substrate.

Using a blade, a physical force was applied between the silicon release layer and the silicon adhesive to cause cracks, thereby separating the semiconductor substrate and the carrier wafer to prepare a thin film substrate (FIG. 2).

The separated semiconductor substrate was cut into a size of 2 X 2 cm 2 and immersed in the silicone resin removal compositions of Examples 1 to 8 and Comparative Examples 1 to 6 for 1 minute. During the immersion, the temperature of the composition was adjusted to 25°C, and the stirrer was stirred by rotating at a speed of 350 rpm. The immersed semiconductor substrate was taken out, washed with IPA, dried, and then the film thickness of the silicone resin remaining on the semiconductor substrate was measured by SEM, and the results are shown in Table 3 below. In addition, after the composition was stored at room temperature for 30 days, the removal rate of the silicone resin remaining on the semiconductor substrate was measured to check the change over time, and the changes are shown in Table 3 below.

1-2. Thin film substrate manufacturing

After the semiconductor process was carried out, a composition of a siloxane monomer and an initiator as a silicone adhesive was applied on the semiconductor substrate on which the device was formed, and then thermally cured at a temperature of 200° C. to provide adhesion.

In addition, polysiloxane as a silicon release layer was coated on one surface of a silicon wafer as a carrier wafer.

The silicon adhesive and the silicon release layer were attached to bond the semiconductor substrate and the carrier wafer.

The subsequent process was carried out in the same manner as in 1-1 to prepare a thin film substrate (Fig. 3), and the experimental results are shown in Table 3 below.

Hardened silicon remaining on the substrate
Removal time
(sec) 1-1 1-2 Example 1 65 120 Example 2 57 125 Example 3 30 84 Example 4 74 162 Example 5 70 168 Example 6 38 97 Example 7 55 115 Example 8 28 80 Comparative Example 1 Not measurable Not measurable Comparative Example 2 Not measurable Not measurable Comparative Example 3 Not measurable Not measurable Comparative Example 4 Not measurable Not measurable Comparative Example 5 Not measurable Not measurable Comparative Example 6 Not measurable Not measurable

From the results of Table 2, it was found that the silicone-based resin removal composition of the present invention has excellent cleaning ability.

On the other hand, the silicone resin removal compositions of Comparative Examples 1 to 4 including only a polar aprotic solvent and Comparative Examples 5 to 6 including a polar protic solvent and a fluorine compound were not able to be measured because the silicone resin remaining on the substrate was not removed. .

In addition, it was found that the thin film substrate prepared by the method 1-1 has a shorter time to remove the cured silicon than the thin film substrate prepared by the method 1-1 and thus is more advantageous for cleaning. However, the thin film substrate manufactured by the method 1-2 has the advantage of minimizing the damage of the substrate that may occur during the manufacturing process than the thin film substrate manufactured by the method 1-1.

Claims (21)

As a composition for removing a silicone-based resin comprising a polar aprotic solvent and a fluorine compound,
The polar aprotic solvent includes at least one selected from the group consisting of pyridine, morpholine, piperazine, urea, oxazolidinone and phosphate solvents,
The fluorine compound is at least one selected from the group consisting of alkyl ammonium fluoride, alkyl phosphonium fluoride, and alkyl sulfonium fluoride.
The composition for removing a silicone-based resin according to claim 1, comprising 70 to 99.9% by weight of a polar aprotic solvent and 0.1 to 30% by weight of a fluorine compound based on the total weight of the composition for removing the silicone-based resin. delete delete The composition for removing a silicone-based resin according to claim 1, wherein the pyridine-based solvent comprises the following Chemical Formula 2.
[Formula 2]

The R ₃ to R ₅ are each the same or different, hydrogen, a linear or branched aliphatic hydrocarbon having 1 to 10 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, a halogen, an aldehyde group, an acetaldehyde group, a cyanide group, or a methyl sulfide group to be. The composition for removing a silicone-based resin according to claim 1, wherein the morpholine-based solvent comprises the following Chemical Formula 3.
[Formula 3]

R ₆ is hydrogen, a tertiary amine including a linear or branched aliphatic hydrocarbon having 1 to 6 carbon atoms, a cyanide group, and an aliphatic hydrocarbon having 1 to 4 carbon atoms,
Phenyl substituted with an aliphatic hydrocarbon having 1 to 4 carbon atoms, a halogen, a cyanide group or an aldehyde group, or
It is a pyridine substituted with an aliphatic hydrocarbon having 1 to 4 carbon atoms, a halogen, a cyanide group, or an aldehyde group. The composition for removing a silicone-based resin according to claim 1, wherein the piperazine-based solvent comprises the following Chemical Formula 4.
[Formula 4]

The R ₇ and R ₈ are each the same or differently, a tertiary amine containing hydrogen, a linear or branched aliphatic hydrocarbon having 1 to 6 carbon atoms, a cyanide group, an aliphatic hydrocarbon having 1 to 4 carbon atoms
Phenyl substituted with an aliphatic hydrocarbon having 1 to 4 carbon atoms, a halogen, a cyanide group or an aldehyde group, or
It is a pyridine substituted with an aliphatic hydrocarbon having 1 to 4 carbon atoms, a halogen, a cyanide group, or an aldehyde group. The composition for removing a silicone-based resin according to claim 1, wherein the urea-based solvent comprises the following Chemical Formula 5.
[Formula 5]

The R ₉ and R ₁₀ are each the same or different, and an aliphatic hydrocarbon having 1 to 6 carbon atoms, a phenyl group, or
It is an aliphatic hydrocarbon having 1 to 4 carbon atoms in which a methoxy group or a dimethylamino group is substituted. The composition for removing a silicone-based resin according to claim 1, wherein the oxazolidinone-based solvent comprises the following formula (6).
[Formula 6]

R ₁₁ is an aliphatic hydrocarbon having 1 to 6 carbon atoms, a phenyl group, or
It is an aliphatic hydrocarbon having 1 to 4 carbon atoms in which a methoxy group or a dimethylamino group is substituted. The composition for removing a silicone-based resin according to claim 1, wherein the phosphate-based solvent comprises the following Chemical Formula 7.
[Formula 7]

The R ₁₂ to R ₁₄ are each the same or differently, a linear or branched aliphatic hydrocarbon having 1 to 8 carbon atoms, an alkoxy group having 3 to 8 carbon atoms, a phenyl group, a phenyl group or halogen substituted with an aliphatic hydrocarbon having 1 to 4 carbon atoms It is a substituted C2-4 aliphatic hydrocarbon. delete The composition for removing a silicone-based resin according to claim 1, wherein the alkyl ammonium fluoride comprises the following Chemical Formula 8.
[Formula 8]

M is an integer of 0 to 15,
N is an integer of 2 to 21. The composition for removing a silicone-based resin according to claim 1, wherein the alkyl phosphonium fluoride comprises the following Chemical Formula 15.
[Formula 15]

Each of R ₁₅ to R ₁₈ is the same or different, and is an aliphatic hydrocarbon having 1 to 22 carbon atoms or an aromatic hydrocarbon having 6 to 20 carbon atoms. The composition for removing a silicone-based resin according to claim 1, wherein the alkylsulfonium fluoride comprises the following Chemical Formula 16.
[Formula 16]

Each of R ₁₉ to R ₂₁ is the same or different, and is an aliphatic hydrocarbon having 1 to 22 carbon atoms or an aromatic hydrocarbon having 6 to 20 carbon atoms. The composition for removing a silicone-based resin according to claim 1, wherein the composition for removing the silicone-based resin further comprises at least one selected from the group consisting of a corrosion inhibitor and a surfactant. (1) bonding the substrate and the carrier wafer by applying a silicon release layer and a silicon adhesive between the substrate and the carrier wafer;
(2) thinning the substrate;
(3) attaching a protective tape to the thinned substrate;
(4) separating the thinned substrate and the carrier wafer to which the protective tape is attached; And
(5) A method of manufacturing a thin film substrate comprising the step of cleaning the separated substrate and the carrier wafer with the silicone resin removal composition of any one of claims 1, 2, 5 to 10, 12 to 15. The method of claim 16, wherein the step (1) comprises sequentially applying a silicon release layer and a silicon adhesive on the substrate, and then bonding a carrier wafer. The method according to claim 16, wherein in step (1), a silicon adhesive is applied on an upper portion of the substrate, a silicon release layer is applied to one surface of the carrier wafer, and then a silicon release layer applied to one surface of the carrier wafer on the silicon adhesive applied on the substrate Thin film substrate manufacturing method, characterized in that to adhere to. The method of claim 16, wherein the substrate is a semiconductor substrate. The method of claim 16, wherein the carrier wafer is a glass or silicon wafer. The method of claim 16, wherein the silicone adhesive is applied and then cured.

Images