KR102181219B1 - Composition for removing an adhesive polymer - Google Patents
Composition for removing an adhesive polymer Download PDFInfo
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- KR102181219B1 KR102181219B1 KR1020190046272A KR20190046272A KR102181219B1 KR 102181219 B1 KR102181219 B1 KR 102181219B1 KR 1020190046272 A KR1020190046272 A KR 1020190046272A KR 20190046272 A KR20190046272 A KR 20190046272A KR 102181219 B1 KR102181219 B1 KR 102181219B1
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- adhesive polymer
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/24—Organic compounds containing halogen
- C11D3/245—Organic compounds containing halogen containing fluorine
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
- C11D1/62—Quaternary ammonium compounds
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/43—Solvents
Abstract
본 발명은 조성물 총 중량에 대하여,
불화알킬암모늄 0.1~30 중량%; 및
카보네이트계 용매, 메틸아세테이트, 에틸아세테이트(EA), 프로필아세테이트, 이소프로필아세테이트, 이소부틸아세테이트, sec-부틸아세테이트, 아밀아세테이트, 펜틸아세테이트, 이소펜틸아세테이트, 옥틸아세테이트, 벤질아세테이트, 페닐아세테이트, 에톡시에틸아세테이트, 메톡시부틸아세테이트(MBA), 프로필렌글리콜모노메틸에테르아세테이트(PGMEA), 메틸이소부틸케톤(MIBK), 디이소부틸케톤, 헵타논, 에틸에톡시프로피오네이트(EEP), 에틸피롤리돈(NEP), 디메틸포름아마이드(DMF), 디메틸프로판아마이드, 디메틸부탄아마이드, 디메틸설폭사이드(DMSO), 디부틸설폭사이드, 디페닐설폭사이드, 디벤질설폭사이드, 프로피오나이트릴, 부티로나이트릴, 및 아세토나이트릴로 이루어진 군으로부터 선택되는 1종 이상의 용매 70~99.9 중량%를 포함하는 접착 폴리머 제거용 조성물을 제공한다. The present invention based on the total weight of the composition,
0.1 to 30% by weight of alkyl ammonium fluoride; And
Carbonate solvent, methyl acetate, ethyl acetate (EA), propyl acetate, isopropyl acetate, isobutyl acetate, sec-butyl acetate, amyl acetate, pentyl acetate, isopentyl acetate, octyl acetate, ethoxy, benzyl acetate, benzyl acetate Ethyl acetate, methoxybutyl acetate (MBA), propylene glycol monomethyl ether acetate (PGMEA), methyl isobutyl ketone (MIBK), diisobutyl ketone, heptanone, ethyl ethoxy propionate (EEP), ethylpyrroly Don (NEP), dimethylformamide (DMF), dimethyl propanamide, dimethyl butanamide, dimethyl sulfoxide (DMSO), dibutyl sulfoxide, diphenyl sulfoxide, dibenzyl sulfoxide, propionitrile, butyronitrile It provides a composition for removing an adhesive polymer comprising 70 to 99.9% by weight of at least one solvent selected from the group consisting of, and acetonitrile.
Description
본 발명은 반도체 웨이퍼의 이면 연삭, 이면 전극 형성 등의 공정에 사용되는 접착 폴리머 제거용 조성물에 관한 것이다.The present invention relates to a composition for removing an adhesive polymer used in processes such as grinding a back surface of a semiconductor wafer and forming a back electrode.
반도체 소자의 제조 공정에 있어서, 반도체 웨이퍼(이하, 단순히 「웨이퍼」라고도 함)의 표면에 전자 회로 등을 형성한 후, 웨이퍼의 두께를 얇게 하기 위해 웨이퍼의 이면 연삭(소위, 백 그라인딩)을 행하는 경우가 있다. 이 경우, 웨이퍼 회로면의 보호, 웨이퍼의 고정 등을 위하여 통상적으로 웨이퍼의 회로면에 접착 폴리머(예: 실리콘)를 개재하여 지지체를 부착한다. 지지체를 웨이퍼의 회로면에 부착하면, 웨이퍼의 이면 연삭 후 두께가 얇아진 웨이퍼를 보강할 수 있고, 웨이퍼의 연삭면에 이면 전극 등을 형성할 수도 있다.In the semiconductor device manufacturing process, after forming an electronic circuit or the like on the surface of a semiconductor wafer (hereinafter, simply referred to as ``wafer''), back grinding (so-called back grinding) of the wafer is performed to reduce the thickness of the wafer. There are cases. In this case, in order to protect the circuit surface of the wafer and fix the wafer, a support is usually attached to the circuit surface of the wafer through an adhesive polymer (eg, silicon). When the support is attached to the circuit surface of the wafer, a wafer having a thinner thickness after grinding the back surface of the wafer can be reinforced, and a back electrode or the like can be formed on the grinding surface of the wafer.
상기 웨이퍼의 이면 연삭, 이면 전극 형성 등의 공정이 완료되면, 웨이퍼의 회로면으로부터 지지체를 제거하고 접착 폴리머를 박리하여 제거하고, 웨이퍼를 절단하여 칩을 제작한다.When the processes such as grinding the back surface of the wafer and forming the back electrode are completed, the support is removed from the circuit surface of the wafer, the adhesive polymer is peeled off and removed, and the wafer is cut to produce a chip.
한편, 최근에는 웨이퍼를 관통하여 설치하는 관통 전극(예를 들어, 실리콘 관통 전극)을 이용한 칩 적층 기술이 개발되어 있다. 이 칩 적층 기술에 따르면, 종래의 와이어 대신 관통 전극을 이용하여 복수의 칩의 전자 회로를 전기적으로 접속하므로, 칩의 고집적화, 동작의 고속화를 도모할 수 있다. 이 칩 적층 기술을 이용하는 경우, 복수의 칩이 적층된 집합체의 두께를 얇게 하기 위해 웨이퍼의 이면 연삭을 행하는 경우가 많으며, 그로 인해, 지지체나 접착 폴리머를 이용할 기회가 증가한다.On the other hand, recently, a chip stacking technology using a through electrode (for example, a silicon through electrode) installed through a wafer has been developed. According to this chip stacking technique, since electronic circuits of a plurality of chips are electrically connected by using through electrodes instead of conventional wires, high integration of chips and high speed operation can be achieved. In the case of using this chip lamination technique, the back side grinding of the wafer is often performed in order to reduce the thickness of the assembly in which a plurality of chips are stacked, thereby increasing the opportunity to use a support or an adhesive polymer.
그런데, 통상적으로 웨이퍼의 회로면에 접착 폴리머를 개재하여 지지체를 부착한 후, 상기 웨이퍼와 지지체의 견고한 부착을 위하여 열경화를 실시하기 때문에 접착 폴리머를 박리하는 경우, 경화된 접착 폴리머가 지지체 및 웨이퍼의 회로면에 잔존하는 경우가 발생한다. 그러므로, 상기 지지체 및 웨이퍼 회로면에 잔존하는 경화된 접착 폴리머를 효율적으로 제거하는 수단이 필요하다. However, since the support is usually attached to the circuit surface of the wafer through the adhesive polymer and then thermally cured to securely attach the wafer to the support, when the adhesive polymer is peeled off, the cured adhesive polymer is used as the support and the wafer. Some cases remain on the circuit surface of. Therefore, there is a need for a means for efficiently removing the cured adhesive polymer remaining on the support and wafer circuit surfaces.
본 발명은 반도체 제조 공정에서 지지체 및 웨이퍼 회로면에 잔존하는 접착 폴리머를 효율적으로 제거할 수 있는 접착 폴리머의 제거용 조성물을 제공하는 것을 목적으로 한다. An object of the present invention is to provide a composition for removing an adhesive polymer capable of efficiently removing the adhesive polymer remaining on a support and a wafer circuit surface in a semiconductor manufacturing process.
본 발명은 조성물 총 중량에 대하여, The present invention based on the total weight of the composition,
불화알킬암모늄 0.1~30 중량%; 및0.1 to 30% by weight of alkyl ammonium fluoride; And
카보네이트계 용매, 메틸아세테이트, 에틸아세테이트(EA), 프로필아세테이트, 이소프로필아세테이트, 이소부틸아세테이트, sec-부틸아세테이트, 아밀아세테이트, 펜틸아세테이트, 이소펜틸아세테이트, 옥틸아세테이트, 벤질아세테이트, 페닐아세테이트, 에톡시에틸아세테이트, 메톡시부틸아세테이트(MBA), 프로필렌글리콜모노메틸에테르아세테이트(PGMEA), 메틸이소부틸케톤(MIBK), 디이소부틸케톤, 헵타논, 에틸에톡시프로피오네이트(EEP), 에틸피롤리돈(NEP), 디메틸포름아마이드(DMF), 디메틸프로판아마이드, 디메틸부탄아마이드, 디메틸설폭사이드(DMSO), 디부틸설폭사이드, 디페닐설폭사이드, 디벤질설폭사이드, 프로피오나이트릴, 부티로나이트릴, 및 아세토나이트릴로 이루어진 군으로부터 선택되는 1종 이상의 용매 70~99.9 중량%를 포함하는 접착 폴리머 제거용 조성물을 제공한다.Carbonate solvent, methyl acetate, ethyl acetate (EA), propyl acetate, isopropyl acetate, isobutyl acetate, sec-butyl acetate, amyl acetate, pentyl acetate, isopentyl acetate, octyl acetate, ethoxy, benzyl acetate, benzyl acetate Ethyl acetate, methoxybutyl acetate (MBA), propylene glycol monomethyl ether acetate (PGMEA), methyl isobutyl ketone (MIBK), diisobutyl ketone, heptanone, ethyl ethoxy propionate (EEP), ethylpyrroly Don (NEP), dimethylformamide (DMF), dimethyl propanamide, dimethyl butanamide, dimethyl sulfoxide (DMSO), dibutyl sulfoxide, diphenyl sulfoxide, dibenzyl sulfoxide, propionitrile, butyronitrile It provides a composition for removing an adhesive polymer comprising 70 to 99.9% by weight of one or more solvents selected from the group consisting of, and acetonitrile.
본 발명의 접착 폴리머 제거용 조성물은 반도체 제조 공정에서 지지체 및 웨이퍼 회로면에 잔존하는 접착 폴리머를 매우 효과적으로 제거하며, 웨이퍼 회로면에 형성된 회로를 부식시키지 않으며, 린스가 용이하므로, 접착 폴리머의 제거에 매우 매우 유용하게 사용될 수 있다. The composition for removing the adhesive polymer of the present invention very effectively removes the adhesive polymer remaining on the support and the wafer circuit surface in the semiconductor manufacturing process, does not corrode the circuit formed on the wafer circuit surface, and is easy to rinse. It can be very useful.
본 발명은 조성물 총 중량에 대하여, The present invention based on the total weight of the composition,
(a) 불화알킬암모늄 0.1~30 중량%; 및(a) 0.1 to 30% by weight of alkyl ammonium fluoride; And
(b) 카보네이트계 용매, 메틸아세테이트, 에틸아세테이트(EA), 프로필아세테이트, 이소프로필아세테이트, 이소부틸아세테이트, sec-부틸아세테이트, 아밀아세테이트, 펜틸아세테이트, 이소펜틸아세테이트, 옥틸아세테이트, 벤질아세테이트, 페닐아세테이트, 에톡시에틸아세테이트, 메톡시부틸아세테이트(MBA), 프로필렌글리콜모노메틸에테르아세테이트(PGMEA), 메틸이소부틸케톤(MIBK), 디이소부틸케톤, 헵타논, 에틸에톡시프로피오네이트(EEP), 에틸피롤리돈(NEP), 디메틸포름아마이드(DMF), 디메틸프로판아마이드, 디메틸부탄아마이드, 디메틸설폭사이드(DMSO), 디부틸설폭사이드, 디페닐설폭사이드, 디벤질설폭사이드, 프로피오나이트릴, 부티로나이트릴, 및 아세토나이트릴로 이루어진 군으로부터 선택되는 1종 이상의 용매 70~99.9 중량%를 포함하는 접착 폴리머 제거용 조성물에 관한 것이다.(b) Carbonate solvent, methyl acetate, ethyl acetate (EA), propyl acetate, isopropyl acetate, isobutyl acetate, sec-butyl acetate, amyl acetate, pentyl acetate, isopentyl acetate, octyl acetate, benzyl acetate, benzyl acetate , Ethoxyethyl acetate, methoxybutyl acetate (MBA), propylene glycol monomethyl ether acetate (PGMEA), methyl isobutyl ketone (MIBK), diisobutyl ketone, heptanone, ethyl ethoxypropionate (EEP), Ethylpyrrolidone (NEP), dimethylformamide (DMF), dimethylpropanamide, dimethylbutanamide, dimethyl sulfoxide (DMSO), dibutyl sulfoxide, diphenyl sulfoxide, dibenzyl sulfoxide, propionitryl, buty It relates to a composition for removing an adhesive polymer comprising 70 to 99.9% by weight of at least one solvent selected from the group consisting of ronitril and acetonitrile.
본 발명의 접착 폴리머 제거용 조성물에서 (a) 불화알킬암모늄은 접착 폴리머의 분자량을 감소시키는 역할을 한다.In the composition for removing the adhesive polymer of the present invention, (a) alkyl ammonium fluoride serves to reduce the molecular weight of the adhesive polymer.
상기 불화알킬암모늄으로는 테트라메틸암모늄플루오라이드(TMAF), 테트라에틸암모늄플루오라이드(TEAF), 테트라부틸암모늄플루오라이드(TBAF) 및 벤질트리메틸암모늄플루오라이드(BTMAF) 등으로 이루어진 군으로부터 선택되는 1종 이상의 것이 사용될 수 있다.The alkyl ammonium fluoride is one selected from the group consisting of tetramethylammonium fluoride (TMAF), tetraethylammonium fluoride (TEAF), tetrabutylammonium fluoride (TBAF), and benzyltrimethylammonium fluoride (BTMAF). The above can be used.
상기 (a) 불화알킬암모늄은 조성물 총 중량에 대하여 0.1~30 중량%로 포함되는 것이 바람직하며, 1~20 중량%로 포함되는 것이 더욱 바람직하다. 상기 불화알킬암모늄이 0.1 중량% 미만으로 포함되는 경우, 접착 폴리머를 효과적으로 제거하지 못하는 문제가 발생될 수 있으며, 30 중량%를 초과하는 경우는 웨이퍼 회로면의 금속 부위가 부식되는 문제가 발생될 수 있다.The (a) alkyl ammonium fluoride is preferably contained in an amount of 0.1 to 30% by weight based on the total weight of the composition, and more preferably contained in an amount of 1 to 20% by weight. If the alkyl ammonium fluoride is contained in an amount of less than 0.1% by weight, a problem of not effectively removing the adhesive polymer may occur, and if it exceeds 30% by weight, a problem of corrosion of the metal part of the wafer circuit surface may occur. have.
본 발명의 접착 폴리머 제거용 조성물에서 (b) 1종 이상의 용매는 경화 폴리머를 팽창시키고, 불화알킬암모늄을 용해시키는 역할을 한다.In the composition for removing the adhesive polymer of the present invention, (b) at least one solvent serves to expand the cured polymer and dissolve the alkyl ammonium fluoride.
상기 카보네이트계 용매는 디메틸카보네이트(DMC), 디에틸카보네이트, 디페닐카보네이트, 디벤질카보네이트, 에틸렌카보네이트, 프로필렌카보네이트(PC) 및 비닐렌카보네이트 등으로 이루어진 군으로부터 선택될 수 있다. The carbonate-based solvent may be selected from the group consisting of dimethyl carbonate (DMC), diethyl carbonate, diphenyl carbonate, dibenzyl carbonate, ethylene carbonate, propylene carbonate (PC), and vinylene carbonate.
상기 1종 이상의 용매는 조성물 총 중량에 대하여 70~99.9 중량%로 포함되는 것이 바람직하며, 80~99 중량%로 포함되는 것이 더욱 바람직하다. 상기 1종 이상의 용매가 70 중량% 미만으로 포함되는 경우, 웨이퍼 회로면의 금속 부위가 부식하는 문제가 발생될 수 있으며, 99.9 중량%를 초과하는 경우는 접착 폴리머를 효과적으로 제거하지 못하는 문제가 발생될 수 있다.The at least one solvent is preferably included in an amount of 70 to 99.9% by weight, and more preferably 80 to 99% by weight, based on the total weight of the composition. When the at least one solvent is contained in an amount of less than 70% by weight, a problem of corrosion of the metal part of the wafer circuit surface may occur, and when it exceeds 99.9% by weight, a problem of not effectively removing the adhesive polymer may occur. I can.
본 발명의 접착 폴리머 제거용 조성물은 상기 성분 외에 이 분야에서 통상적으로 사용되는 부식방지제, 계면활성제 등의 성분들을 더 포함할 수 있다.In addition to the above components, the composition for removing the adhesive polymer of the present invention may further include components such as corrosion inhibitors and surfactants commonly used in this field.
본 발명의 접착 폴리머 제거용 조성물에서 상기 접착 폴리머는, 특별히 한정되지 않으며, 예컨대, 실리콘 폴리머일 수 있다. 상기 실리콘 폴리머의 성분은 특별히 한정되지 않으며 이 분야에서 통상적으로 사용되는 것을 의미한다. In the composition for removing the adhesive polymer of the present invention, the adhesive polymer is not particularly limited, and may be, for example, a silicone polymer. The component of the silicone polymer is not particularly limited, and it means that it is commonly used in this field.
이하에서, 실시예를 통하여 본 발명을 보다 상세히 설명한다. 그러나, 하기의 실시예는 본 발명을 더욱 구체적으로 설명하기 위한 것으로서, 본 발명의 범위가 하기의 실시예에 의하여 한정되는 것은 아니다. 하기의 실시예는 본 발명의 범위 내에서 당업자에 의해 적절히 수정, 변경될 수 있다. Hereinafter, the present invention will be described in more detail through examples. However, the following examples are for explaining the present invention more specifically, and the scope of the present invention is not limited by the following examples. The following examples can be appropriately modified and changed by those skilled in the art within the scope of the present invention.
실시예 1~6 및 비교예 1~3: 접착 폴리머 제거용 조성물의 제조 및 성능 테스트Examples 1 to 6 and Comparative Examples 1 to 3: Preparation and performance test of a composition for removing adhesive polymer
(1) 접착 폴리머 제거용 조성물의 제조(1) Preparation of adhesive polymer removal composition
하기 표 1에 기재된 성분을 해당 조성비로 혼합하여 실시예 1~6 및 비교예 1~3의 접착 폴리머 제거용 조성물을 제조하였다.The components shown in Table 1 were mixed at the corresponding composition ratio to prepare a composition for removing the adhesive polymer of Examples 1 to 6 and Comparative Examples 1 to 3.
(2) 성능테스트(2) Performance test
경화된 실리콘 고분자가 80㎛의 두께로 코팅된 웨이퍼 시료를 2 X 2㎠의 크기로 잘라서 실시예 1~6 및 비교예 1~3의 폴리머 제거용 조성물에 1분간 침지시켰다. 상기 침지시 상기 조성물의 온도는 25℃로 조절하였으며, 교반기를 350rpm의 속도로 회전시켜 교반하였다. 상기 침지시킨 웨이퍼 시료를 꺼내어 IPA로 세정하고 건조시킨 후, SEM으로 경화 실리콘 고분자의 막두께를 측정하여 그 결과를 하기 표 1에 나타내었다.A wafer sample coated with a cured silicone polymer to a thickness of 80 μm was cut into a size of 2×2 cm 2, and immersed in the polymer removal compositions of Examples 1 to 6 and Comparative Examples 1 to 3 for 1 minute. During the immersion, the temperature of the composition was adjusted to 25°C, and the stirrer was stirred by rotating at a speed of 350 rpm. The immersed wafer sample was taken out, washed with IPA, dried, and then the film thickness of the cured silicone polymer was measured by SEM, and the results are shown in Table 1 below.
용해속도
(㎛/min)Hardened silicone
Dissolution rate
(㎛/min)
(함량: 중량%)(Content: wt%)
주)week)
DMF: 디메틸포름아마이드DMF: dimethylformamide
DMSO: 디메틸설폭사이드DMSO: dimethyl sulfoxide
NEP: 에틸피롤리돈NEP: ethylpyrrolidone
MIBK: 메틸이소부틸케톤MIBK: methyl isobutyl ketone
DMC: 디메틸카보네이트DMC: dimethyl carbonate
MEK: 메틸에틸케톤MEK: methyl ethyl ketone
DMAC: 디메틸아세트아마이드DMAC: dimethylacetamide
DBU: 1,8-diazabicyclo-[5,4,0]-undec-7-eneDBU: 1,8-diazabicyclo-[5,4,0]-undec-7-ene
TBAF: 테트라부틸암모늄플루오라이드TBAF: tetrabutylammonium fluoride
상기 표 1의 시험결과로부터 본 발명의 접착 폴리머 제거용 조성물은 비교예의 접착 폴리머 제거용 조성물과 비교하여 동등 이상의 실리콘 고분자 제거력을 가짐을 알 수 있다. From the test results in Table 1, it can be seen that the composition for removing the adhesive polymer of the present invention has a silicone polymer removing power equal to or higher than that of the composition for removing the adhesive polymer of Comparative Example.
Claims (5)
불화알킬암모늄 0.1~30 중량%; 및
카보네이트계 용매, 메틸아세테이트, 에틸아세테이트(EA), 프로필아세테이트, 이소프로필아세테이트, 이소부틸아세테이트, sec-부틸아세테이트, 아밀아세테이트, 펜틸아세테이트, 이소펜틸아세테이트, 옥틸아세테이트, 벤질아세테이트, 페닐아세테이트, 에톡시에틸아세테이트, 메톡시부틸아세테이트(MBA), 메틸이소부틸케톤(MIBK), 디이소부틸케톤, 헵타논, 에틸피롤리돈(NEP), 디메틸프로판아마이드, 디메틸부탄아마이드, 디부틸설폭사이드, 디페닐설폭사이드, 디벤질설폭사이드, 프로피오나이트릴, 및 부티로나이트릴로 이루어진 군으로부터 선택되는 1종 이상의 용매 70~99.9 중량%를 포함하며,
양자성 용매 및 금속 이온을 포함하지 않는 접착 폴리머 제거용 조성물로,
상기 접착 폴리머는 실리콘 폴리머이며,
웨이퍼 이면 연삭 또는 이면 전극 형성 공정에서 사용되는 것인, 접착 폴리머 제거용 조성물.Based on the total weight of the composition,
0.1 to 30% by weight of alkyl ammonium fluoride; And
Carbonate solvent, methyl acetate, ethyl acetate (EA), propyl acetate, isopropyl acetate, isobutyl acetate, sec-butyl acetate, amyl acetate, pentyl acetate, isopentyl acetate, octyl acetate, ethoxy, benzyl acetate, benzyl acetate Ethyl acetate, methoxybutyl acetate (MBA), methyl isobutyl ketone (MIBK), diisobutyl ketone, heptanone, ethyl pyrrolidone (NEP), dimethyl propanamide, dimethyl butanamide, dibutyl sulfoxide, diphenyl It contains 70 to 99.9% by weight of one or more solvents selected from the group consisting of sulfoxide, dibenzyl sulfoxide, propionitrile, and butyronitril
A composition for removing an adhesive polymer that does not contain a proton solvent and a metal ion,
The adhesive polymer is a silicone polymer,
A composition for removing an adhesive polymer, which is used in a wafer back surface grinding or a back electrode forming process.
상기 카보네이트계 용매는 디메틸카보네이트, 디에틸카보네이트, 디페닐카보네이트, 디벤질카보네이트, 에틸렌카보네이트, 프로필렌카보네이트 및 비닐렌카보네이트로 이루어진 군으로부터 선택되는 것을 특징으로 하는 접착 폴리머 제거용 조성물.The method according to claim 1,
The carbonate-based solvent is an adhesive polymer removal composition, characterized in that selected from the group consisting of dimethyl carbonate, diethyl carbonate, diphenyl carbonate, dibenzyl carbonate, ethylene carbonate, propylene carbonate and vinylene carbonate.
The composition for removing an adhesive polymer according to claim 4, wherein the dissolution rate of the silicone is 17.1 µm/min or more.
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