KR102176246B1 - Deposition system - Google Patents

Abstract

The deposition system comprises at least a plurality of process chamber groups arranged in a first direction, a carrier for transferring the process chamber groups, and at least disposed between the process chamber groups to provide a transfer path for the carrier between the process chamber groups. A gate valve, a substrate attached to and transferred to the carrier and on which a deposition material is deposited, and a plurality of magnetic levitation modules disposed to face the carrier in the process chamber groups to transfer the carrier by electromagnetic force, When a predetermined area of the carrier overlaps with a discontinuous section defined as an area in which the gate valve is disposed, the sum of the electromagnetic forces of the magnetic levitation modules overlapping with the carrier is when the carrier is disposed in each of the process chamber groups It is set to be greater than the sum of electromagnetic forces of the magnetic levitation modules overlapping the carrier.

Description

Deposition system {DEPOSITION SYSTEM}

The present invention relates to a deposition system, and more particularly, to a deposition system capable of preventing sagging of a carrier transporting a substrate.

Recently, an organic light emitting diode display (OLED), which has excellent luminance characteristics and viewing angle characteristics, and does not require a separate light source unit unlike liquid crystal display devices, is attracting attention as a next-generation display device. The organic light emitting display device does not require a separate light source, and thus can be manufactured in a lightweight and thin form. The organic light emitting display device has characteristics such as low power consumption, high luminance, and high reaction speed.

The organic light-emitting display device includes an organic light-emitting device including an anode electrode, an organic layer (or organic light-emitting layer), and a cathode electrode. In the organic light-emitting device, holes and electrons are injected from the anode electrode and the cathode electrode into the organic emission layer, respectively, to form excitons, and the excitons transition to a ground state to emit light.

A deposition system is used to form an organic layer on a substrate of an organic light emitting display device. The deposition system includes a plurality of vacuum chambers, and a plurality of layers for forming an organic layer in the vacuum chambers are deposited on a substrate.

It is an object of the present invention to provide a deposition system capable of preventing sagging of a carrier transferring a substrate.

The deposition system according to an embodiment of the present invention includes a plurality of process chamber groups arranged in a first direction, a carrier for transporting the process chamber groups, and the carrier disposed between the process chamber groups and between the process chamber groups. At least one gate valve providing a transfer path of the carrier, a substrate attached to and transferred to the carrier and on which a deposition material is deposited, and a plurality of substrates disposed to face the carrier in the process chamber groups to transfer the carrier by electromagnetic force. Including magnetic levitation modules, when a predetermined region of the carrier overlaps with a discontinuous section defined as a region in which the gate valve is disposed, the total sum of the electromagnetic forces of the magnetic levitation modules overlapping the carrier When disposed in the process chamber group, it is set to be greater than the sum of electromagnetic forces of the magnetic levitation modules overlapping the carrier.

Each of the process chamber groups includes a plurality of process chambers connected to each other in the first direction.

The magnetic levitation modules each include a plurality of electromagnet members generating the electromagnetic force, the carrier includes a plurality of magnet members disposed to face the electromagnet members, and the carrier includes each of the electromagnet members and each of the magnets It is transferred to the floating state by the electromagnetic force of the member.

Each of the electromagnet members includes a coil receiving current to generate the electromagnetic force.

When the carrier is disposed inside each of the process chambers, the electromagnet members overlapping with the carrier generate a first electromagnetic force, respectively.

When a predetermined area on one side of the carrier or a predetermined area on the other side overlaps the discontinuous section, among the electromagnet members overlapping with the carrier, the electromagnet member overlapping with the center of the carrier is a second larger than the first electromagnetic force. The electromagnet members that generate electromagnetic force and do not overlap with the center of the carrier among the electromagnet members overlapping with the carrier generate a third electromagnetic force that gradually decreases as the distance from the electromagnet member overlaps with the center of the carrier. Generated, and the third electromagnetic force is less than the second electromagnetic force and greater than or equal to the first electromagnetic force.

When the carrier enters the discontinuous section and a predetermined area on both sides of the carrier overlaps a predetermined area of the process chambers, among the electromagnet members overlapping with the carrier, the electromagnet members adjacent to both sides of the discontinuous section respectively Among the electromagnet members that generate the second electromagnetic force and overlap with the carrier, the electromagnet members excluding the electromagnet members adjacent to both sides of the discontinuous section, respectively, gradually increase as they move away from the electromagnet members adjacent to both sides of the discontinuous section. It generates a fourth electromagnetic force that is reduced to, and the fourth electromagnetic force is less than the second electromagnetic force and is greater than or equal to the first electromagnetic force.

The total sum of the second and third electromagnetic forces and the total sum of the second and fourth electromagnetic forces are respectively greater than the total sum of the first electromagnetic force.

Each of the magnetic levitation modules further includes a position sensor disposed between the electromagnet members in a second direction crossing the first direction to detect the position of the carrier.

Further comprising a control unit for controlling the current provided to the electromagnet members in response to the position information of the carrier sensed by the position sensor, the control unit according to the position of the carrier, the first, second, second Current corresponding to the third and fourth electromagnetic forces is provided to the electromagnet members.

The deposition system of the present invention can prevent sagging of a carrier transporting a substrate.

1 is a schematic perspective view of a deposition system according to an embodiment of the present invention.
FIG. 2 is a diagram illustrating a magnetic levitation module disposed in the vacuum chamber shown in FIG. 1.
FIG. 3 is a diagram illustrating a deposition process of the vacuum chambers shown in FIG. 1.
4A to 4I are diagrams illustrating a transfer state of a substrate transferred from a third process chamber to a fourth process chamber via a gate valve.
5 is a schematic perspective view of a deposition system according to another embodiment of the present invention.

Advantages and features of the present invention, and a method of achieving them will become apparent with reference to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in a variety of different forms, only these embodiments are intended to complete the disclosure of the present invention, and those skilled in the art to which the present invention pertains. It is provided to fully inform the person of the scope of the invention, and the invention is only defined by the scope of the claims. The same reference numerals refer to the same components throughout the specification.

When an element or layer is referred to as “on” or “on” of another element or layer, it is possible to interpose another layer or other element in the middle as well as directly above the other element or layer. All inclusive. On the other hand, when a device is referred to as "directly on" or "directly on", it indicates that no other device or layer is interposed therebetween. "And/or" includes each and every combination of one or more of the recited items.

Spatially relative terms "below", "beneath", "lower", "above", "upper", etc., as shown in the figure It may be used to easily describe the correlation between the device or components and other devices or components. Spatially relative terms should be understood as terms including different directions of the device during use or operation in addition to the directions shown in the drawings. The same reference numerals refer to the same components throughout the specification.

Although the first, second, etc. are used to describe various elements, components, and/or sections, it should be understood that these elements, components and/or sections are not limited by these terms. These terms are only used to distinguish one element, component or section from another element, component or section. Therefore, it goes without saying that the first element, the first element, or the first section mentioned below may be a second element, a second element, or a second section within the technical scope of the present invention.

Embodiments described herein will be described with reference to a plan view and a cross-sectional view, which are ideal schematic diagrams of the present invention. Therefore, the shape of the exemplary diagram may be modified by manufacturing technology and/or tolerance. Accordingly, embodiments of the present invention are not limited to the specific form shown, but also include a change in form generated according to a manufacturing process. Accordingly, regions illustrated in the drawings have schematic properties, and the shapes of regions illustrated in the drawings are intended to illustrate a specific shape of the region of the device, and are not intended to limit the scope of the invention.

Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the accompanying drawings.

1 is a schematic perspective view of a deposition system according to an embodiment of the present invention.

Referring to FIG. 1, the deposition system 100 includes a loading chamber L, an unloading chamber UL, a plurality of process chamber groups GP1 and GP2, and a gate valve GV. The loading chamber L, the unloading chamber UL, the process chamber groups GP1 and GP2, and the gate valve GV are arranged in the first direction D1.

The loading chamber L, the unloading chamber UL, and the process chamber groups GP1 and GP2 may be defined as vacuum chambers. The inside of the loading chamber L, the unloading chamber UL, and the process chamber groups GP1 and GP2 are formed to maintain a high degree of vacuum. A configuration in which the vacuum chambers are arranged in the first direction D1 may be defined as an in-line deposition system.

The process chamber groups GP1 and GP2 are disposed between the loading chamber L and the unloading chamber UL. The gate valve GV is disposed between the process chamber groups GP1 and GP2. The gate valve GV provides a transfer path for a carrier to which a substrate is attached between the process chamber groups GP1 and GP2. This configuration will be described in detail below.

Each of the process chamber groups GP1 and GP2 includes a plurality of process chambers. Specifically, the process chamber groups GP1 and GP2 include a first process chamber group GP1 and a second process chamber group GP2.

The first process chamber group GP1 includes first, second, and third process chambers 10, 20, and 30 arranged in a first direction D1 and sequentially connected to each other. The second process chamber group GP2 includes fourth and fifth process chambers 40 and 50 arranged in a first direction D1 and sequentially connected to each other. The gate valve GV is disposed between the third process chamber 30 and the fourth process chamber 40.

First to fifth deposition processes are performed in the first to fifth process chambers 10 to 50. A description of the first to fifth deposition processes will be described in detail below with reference to FIG. 3. Although the first to fifth process chambers 10 to 50 are illustrated as an exemplary embodiment, the present invention is not limited thereto, and more than five process chambers may be disposed in the deposition system 100.

The substrate on which the deposition process is performed is introduced into the deposition system 100 through the loading chamber L. The substrate is attached to the carrier and transferred to the loading chamber, the first to fifth process chambers 10 to 50, and the unloading chamber UL by a magnetic levitation method.

When the substrate moves through the first to fifth process chambers 10 to 50 through the carrier, a deposition material is deposited on the substrate in the first to fifth process chambers 10 to 50. The substrate on which the deposition process is completed is discharged from the deposition system 100 through the unloading chamber.

The gate valve GV provides a transfer path for a carrier to which a substrate is attached between the third process chamber 30 and the fourth process chamber 40. Accordingly, the substrate transferred to the third process chamber 30 and subjected to the deposition process may be transferred to the fourth process chamber 40 via the gate valve GV. The region where the gate valve GV is disposed may be defined as a discontinuous section DCS. The discontinuous section (DCS) may be less than or equal to 300mm.

Conventionally, the first to fifth process chambers 10 to 50 are arranged in a first direction D1 and sequentially to be connected to each other. In this case, if an abnormality occurs in any one of the first to fifth process chambers 10 to 50, the process of all the process chambers 10 to 50 is stopped to repair the abnormal process chamber. Could Also, if repair was not possible, all process chambers could be replaced.

However, the deposition system 100 of the present invention divides the first to fifth process chambers 10 to 50 into a first process chamber group GP1 and a second process chamber group GP2. Therefore, when an abnormality occurs in the first process chamber group GP1, only the first, second, and third process chambers 10, 20, and 30 of the first process chamber group GP1 are interrupted and the process is interrupted. The resulting process chamber can be repaired.

In addition, when an abnormality occurs in the second process chamber group GP2, only the fourth and third process chambers 40 and 50 of the second process chamber group GP2 are stopped, and the process chamber in which the abnormality occurs is repaired. Can be. As a result, the deposition process can be performed more efficiently.

FIG. 2 is a diagram illustrating a magnetic levitation module disposed in the vacuum chamber shown in FIG. 1.

For convenience of explanation, in FIG. 2, the magnetic levitation module MLM is illustrated in a cross section viewed from the first direction D1.

Referring to FIG. 2, the magnetic levitation module MLM is disposed to face the upper portion of the carrier CR. The substrate SUB is attached to the lower portion of the carrier CR. A plurality of magnetic levitation modules (MLM) are prepared to be disposed above the loading chamber (L), the unloading chamber (UL), and the first to fifth process chambers 10 to 50 shown in FIG. 1. I can.

That is, a plurality of magnetic levitation modules MLM are disposed above the loading chamber L, the unloading chamber UL, and the first to fifth process chambers 10 to 50. This configuration will be described in detail below with reference to FIG. 3.

Each magnetic levitation module (MLM) includes a plurality of electromagnet members (EM) and a position detection sensor (S). The electromagnet members EM may be defined as electromagnet stators. The electromagnet members EM may be arranged in a plurality of rows corresponding to the first direction D1.

In FIG. 2, cross-sections of the electromagnet members EM arranged in two rows are illustrated, but the present invention is not limited thereto, and the electromagnet members EM may be arranged in more rows than the two rows. Each of the electromagnet members EM includes a coil COI that receives current and generates an electromagnetic force.

The position detection sensor S may be disposed between the electromagnet members EM in the second direction D2 crossing the first direction D1. In FIG. 2, one position sensing sensor S is disposed, but substantially a plurality of position sensing sensors S may be disposed between the electromagnet members EM in the second direction D2. The position detection sensor S detects the position of the carrier CR and outputs it to a control unit (not shown).

The carrier CR includes two protrusions P protruding from the left and right sides of the carrier CR. Two rail portions RA are disposed to face the left and right side surfaces of the carrier CR. Each of the rail portions RA includes a predetermined rail groove RAG facing the left and right side surfaces of the carrier CR. The protrusions P of the carrier CR are disposed adjacent to the rail grooves RAG of the corresponding rail part RA. The protrusions P, the rail parts RA, and the rail grooves RAG extend in the first direction D1.

A plurality of magnet members M are disposed on the carrier CR to face the corresponding electromagnet members EM. The magnet members M are disposed in a plurality of grooves G recessed downward from the upper surface of the carrier CR. The magnet members M may be defined as magnet exercisers.

The carrier CR may be transported in the vacuum chambers by a non-contact magnetic levitation method. The magnetic levitation method is a method that uses the principle of a linear motion of a motor by electromagnetic force of a stator including a coil and a motor including a magnet. Accordingly, when current is supplied to the coil COI, the carrier CR may be transferred in the floating state by the electromagnetic force between the electromagnet members EM and the magnet members M.

The carrier CR is transported along the rail grooves RAG. The protrusions P of the carrier CR are disposed adjacent to and transported without contacting the rail grooves RAG. The rail grooves RAG may prevent the carrier CR from leaving its original position during transport. In addition, it may serve to support the carrier so that it does not fall downward due to a change in electromagnetic force.

When a predetermined area of the carrier CR overlaps with a discontinuous section, the total sum of the electromagnetic forces of the electromagnet members EM of the magnetic levitation modules MLM overlapping the carrier CR is, the carrier CR is the process chamber Set to be greater than the sum of the electromagnetic forces of the electromagnet members EM of the magnetic levitation modules MLM overlapping with the carrier CR when disposed within the process chambers 10 to 50 of the groups GP1 and GP2 do. This configuration will be described in detail below.

3 is a diagram illustrating a deposition process of the vacuum chambers shown in FIG. 1.

3 is a cross-sectional view of the vacuum chambers in the second direction shown in FIG. 1 for convenience of description.

Referring to FIG. 3, a plurality of magnetic levitation modules MLM are disposed above the loading chamber L, the unloading chamber UL, and the first to fifth process chambers 10 to 50.

As an exemplary embodiment, two magnetic levitation modules MLM are disposed in each vacuum chamber, but the present invention is not limited thereto, and more than two magnetic levitation modules MLM may be disposed in each vacuum chamber.

The substrate SUB on which the deposition process is to be performed flows into the loading chamber L. The substrate SUB is transferred to the loading chamber L, the first to fifth process chambers 10 to 50, and the unloading chamber UL by the magnetic levitation modules MLM.

The substrate SUB is stopped in each of the first to fifth process chambers 10 to 50 for a predetermined time. While the substrate SUB is stopped, deposition materials are deposited on the substrate SUB in the first to fifth process chambers 10 to 50.

For example, the organic light emitting layer to be formed on the substrate (SUB) is a hole injection layer (HIL), a hole transporting layer (HTL), an emission layer (EML), an electron transporting layer. , ETL) and an electron injection layer (EIL).

In the first to fifth process chambers 10 to 50, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer may be sequentially deposited on the substrate SUB.

Specifically, the substrate SUB disposed in the loading chamber L is transferred to the first process chamber 10 by the magnetic levitation modules MLM. The first deposition source 11 is disposed under the inside of the first process chamber 10. A first deposition material for forming a hole injection layer may be accommodated in the first deposition source 11.

The substrate SUB is attached to the carrier CR and disposed above the inside of the first process chamber 10. That is, the first deposition source 11 and the substrate SUB are disposed to face each other. Although not shown, a heater for vaporizing the first deposition material may be disposed in the first deposition source 11.

While the substrate SUB is stopped in the first process chamber 10, the first deposition material vaporized in the first deposition source 11 by the heater is sprayed onto the substrate SUB through the nozzle NOZ. Accordingly, the first deposition material may be deposited on the substrate SUB to form a hole injection layer.

The substrate SUB disposed in the first process chamber 10 is transferred to the second process chamber 20 by magnetic levitation modules MLM. The second deposition source 21 is disposed below the second process chamber 20. A second deposition material for forming a hole transport layer may be accommodated in the second deposition source 21.

The substrate SUB is attached to the carrier CR and disposed on the inside of the second process chamber 20 to face the second deposition source 21. Although not shown, a heater for vaporizing a second deposition material may be disposed in the second deposition source 21.

While the substrate SUB is stopped in the second process chamber 20, the second deposition material vaporized in the second deposition source 21 by the heater is sprayed onto the substrate SUB through the nozzle NOZ. Accordingly, a second deposition material may be deposited on the substrate SUB to form a hole transport layer.

The substrate SUB disposed in the third process chamber 30 is transferred to the third process chamber 30 by magnetic levitation modules MLM. A third deposition source 31 is disposed below the third process chamber 30. The third deposition source 31 may contain a third deposition material for forming an emission layer.

The substrate SUB is attached to the carrier CR and disposed above the third process chamber 30 to face the third deposition source 31. Although not shown, a heater for vaporizing a third deposition material may be disposed in the third deposition source 31.

While the substrate SUB is stopped in the third process chamber 30, the third deposition material vaporized in the third deposition source 31 by the heater is sprayed onto the substrate SUB through the nozzle NOZ. Therefore, a light emitting layer may be formed by depositing a third deposition material on the substrate SUB.

The substrate SUB disposed in the third process chamber 30 is transferred to the fourth process chamber 40 through the gate valve GV by the magnetic levitation modules MLM. A fourth deposition source 41 is disposed below the fourth process chamber 40. A fourth deposition material for forming an electron transport layer may be accommodated in the fourth deposition source 41.

The substrate SUB is attached to the carrier CR and disposed above the fourth process chamber 40 to face the fourth deposition source 41. Although not shown, a heater for vaporizing the fourth deposition material may be disposed in the fourth deposition source 41.

While the substrate SUB is stopped in the fourth process chamber 40, the fourth deposition material vaporized in the fourth deposition source 41 by the heater is sprayed onto the substrate SUB through the nozzle NOZ. Accordingly, a fourth deposition material may be deposited on the substrate SUB to form an electron transport layer.

The substrate SUB disposed in the fourth process chamber 40 is transferred to the fifth process chamber 50 by magnetic levitation modules MLM. The fifth deposition source 51 is disposed below the fifth process chamber 50. A fifth deposition material for forming an electron injection layer may be accommodated in the fifth deposition source 51.

The substrate SUB is attached to the carrier CR and disposed above the fifth process chamber 50 to face the fifth deposition source 51. Although not shown, a heater for vaporizing the fifth deposition material may be disposed in the fifth deposition source 51.

While the substrate SUB is stopped in the fifth process chamber 50, the fifth deposition material vaporized in the fifth deposition source 51 by the heater is sprayed onto the substrate SUB through the nozzle NOZ. Accordingly, the fifth deposition material may be deposited on the substrate SUB to form an electron injection layer.

The substrate SUB on which the deposition process has been completed in the fifth process chamber 50 is transferred to the unloading chamber UL by the magnetic levitation modules MLM. The substrate SUB flows out from the deposition system 100 through the unloading chamber UL.

4A to 4I are diagrams illustrating a transfer state of a substrate transferred from a third process chamber to a fourth process chamber via a gate valve.

Referring to FIG. 4A, after the deposition process is completed in the third process chamber 30, the carrier CR to which the substrate SUB is attached may be transferred to the gate valve GV by the electromagnet members EM. The gate valve GV includes a gate GAT providing a path through which the carrier CR to which the substrate SUB is attached is transferred. The gate GAT may be opened when the carrier CR is transferred after the deposition process is completed in the third process chamber 30.

The control unit 60 receives the location information PS of the carrier CR sensed from the location detection sensors S. The control unit 60 provides a current I corresponding to the electromagnetic force generated in each of the electromagnet members EM to the electromagnet members EM according to the position of the carrier CR in response to the location information PS. .

Although the third and fourth process chambers 30 and 40 are shown in FIG. 4A, the control unit 60 includes position detection sensors S disposed in the other vacuum chambers L, UL, 10, 20, and 50. The current I provided to the electromagnet members EM may be controlled in response to the position information PS of the carrier CR provided from

Specifically, when the carrier CR is disposed inside each of the vacuum chambers L, UL, 10 to 50, the controller 60 provides the position information (PS) of the carrier CR from the position detection sensors S. ) Is provided. The control unit 60 provides a current I corresponding to the first electromagnetic force EMF1 to the electromagnet members EM overlapping the carrier CR in response to the location information PS. Accordingly, the electromagnet members EM overlapping the carrier CR generate a first electromagnetic force EMF1, respectively.

That is, when the carrier CR is disposed inside each of the vacuum chambers L, UL, 10 to 50, the electromagnet members EM overlapping with the carrier CR generate a first electromagnetic force EMF1, respectively. do.

Accordingly, as shown in FIG. 4A, when the carrier CR is disposed inside the third process chamber 30 before entering the gate valve GV, the carrier CR is controlled by the control unit 60. The electromagnet members EM overlapping with generate a first electromagnetic force EMF1. The carrier CR is floated and transported by the electromagnet members EM generating the first electromagnetic force EMF1.

Referring to FIG. 4B, the carrier CR transferred from the third process chamber 30 enters the gate GAT of the gate valve GV. Accordingly, a predetermined region on one side of the carrier CR overlaps the gate valve GV. That is, a predetermined area on one side of the carrier CR may overlap with the discontinuous section DCS.

The control unit 60 responds to the position information PS of the carrier CR provided from the position detection sensors S, the center C of the carrier CR among the electromagnet members EM overlapping the carrier CR. A current I corresponding to the second electromagnetic force EMF2 is provided to the electromagnet member EM overlapping with ). Accordingly, the electromagnet member EM overlapping the center C of the carrier CR generates a second electromagnetic force EMF2. The second electromagnetic force EMF2 is greater than the first electromagnetic force EMF1.

In addition, in response to the location information PS, the control unit 60 is provided to the electromagnet members EM that do not overlap with the center C of the carrier CR among the electromagnet members EM overlapping the carrier CR. 3 Provides a current (I) corresponding to the electromagnetic force (EMF3).

The third electromagnetic force EMF3 gradually decreases as the distance from the electromagnet member EM overlapped with the center C of the carrier CR. Therefore, among the electromagnet members EM overlapping with the carrier CR, the electromagnet members EM that do not overlap with the center C of the carrier CR are the electromagnet members that overlap the center C of the carrier CR. A third electromagnetic force (EMF3) gradually decreases as the distance from (EM) is generated. The third electromagnetic force EMF3 may be smaller than the second electromagnetic force EMF2 and greater than or equal to the first electromagnetic force EMF1.

That is, among the electromagnet members EM overlapping with the carrier CR, the largest second electromagnetic force EMF2 is generated in the electromagnet member EM overlapping the center C of the carrier CR, and the carrier CR A third electromagnetic force EMF3 that gradually decreases in the electromagnet members EM may be generated as the distance from the center C of the is increased.

The lengths of arrows of the first, second, and third electromagnetic forces EMF1, EMF2 and EMF3 shown in FIGS. 4A and 4B are proportional to the strength of the electromagnetic force. Hereinafter, the lengths of arrows of the first, second, third, and fourth electromagnetic forces EMF1, EMF2, EMF3, and EMF4 shown in FIGS. 4C to 4I are also proportional to the strength of the electromagnetic force.

The carrier CR is floated and transported by the electromagnet members EM generating the second and third electromagnetic forces EMF2 and EMF3.

Referring to FIG. 4C, the carrier CR transferred from the third process chamber 30 enters the gate GAT of the gate valve GV and is transferred to be adjacent to the fourth process chamber 40. The center of the carrier CR has not entered the gate GAT. As a predetermined area on one side of the carrier CR, the area on the right side of the center of the carrier CR overlaps the discontinuous section DCS.

In this case, as described in FIG. 4B, among the electromagnet members EM overlapping with the carrier CR under the control of the controller 60, the electromagnet member EM overlapping with the center C of the carrier CR Generates a second electromagnetic force (EMF2).

In addition, among the electromagnet members EM overlapping with the carrier CR under the control of the control unit 60, the electromagnet members EM that do not overlap with the center C of the carrier CR are the third electromagnetic force EMF3. Occurs. As described above, the third electromagnetic force EMF3 gradually decreases as the distance from the electromagnet member EM overlapped with the center C of the carrier CR.

Therefore, among the electromagnet members EM overlapping with the carrier CR, the electromagnet members EM that do not overlap with the center C of the carrier CR are the electromagnet members that overlap the center C of the carrier CR. A third electromagnetic force (EMF3) gradually decreases as the distance from (EM) is generated.

The second electromagnetic force EMF2 is greater than the first electromagnetic force EMF1, and the third electromagnetic force EMF3 is greater than or equal to the first electromagnetic force EMF1 and less than the second electromagnetic force EMF2. Therefore, when a predetermined area on one side of the carrier CR overlaps the discontinuous section DCS, the total of the second and third electromagnetic forces EMF2 and EMF3 of the electromagnet members EM overlapping the carrier CR The sum is set to be greater than the total sum of the first electromagnetic force EM1 of the electromagnet members EM overlapping the carrier CR when the carrier CR is disposed in each vacuum chamber.

The carrier CR is floated and transported by the electromagnet members EM generating the second and third electromagnetic forces EMF2 and EMF3.

4D, 4E, and 4F, the carrier CR is transferred so that the center C of the carrier CR enters the discontinuous section DCS, and a predetermined area on one side of the carrier CR is It enters the fourth process chamber 40. Accordingly, the carrier CR is transferred so that a predetermined area on both sides of the carrier CR may overlap with a predetermined area of the third process chamber 30 and the fourth process chamber 40.

As an exemplary embodiment, when the center C of the carrier CR overlaps the discontinuous section DCS, predetermined areas on both sides of the carrier CR are the third process chamber 30 and the fourth process chamber 40. ) May overlap with a predetermined area. However, the present invention is not limited thereto, and depending on the size of the carrier CR, a predetermined area on both sides of the carrier CR before the central portion C of the carrier CR enters the discontinuous section DCS is a third process chamber ( 30) and a predetermined area of the fourth process chamber 40 may overlap.

In response to the location information PS of the carrier CR provided from the location detection sensors S, the control unit 60 is located on both sides of the discontinuous section DCS among the electromagnet members EM overlapping the carrier CR. A current I corresponding to the second electromagnetic force EMF2 is provided to each adjacent electromagnet member EM. Accordingly, the electromagnet members EM adjacent to both sides of the discontinuous section DCS generate the second electromagnetic force EMF2.

In addition, the control unit 60 includes electromagnet members excluding the electromagnet members EM adjacent to both sides of the discontinuous section DCS among the electromagnet members EM overlapping the carrier CR in response to the location information PS. EM) is provided with a current I corresponding to the fourth electromagnetic force EMF4.

Similar to the third electromagnetic force EMF4, the fourth electromagnetic force EMF4 gradually decreases as the distance from the electromagnet member EM adjacent to both sides of the discontinuous section DCS increases. Therefore, among the electromagnet members EM overlapping with the carrier CR, the electromagnet members EM excluding the electromagnet members EM adjacent to both sides of the discontinuous section DCS are respectively adjacent to both sides of the discontinuous section DCS. A fourth electromagnetic force EMF4 that gradually decreases as the distance from the electromagnet member EM is generated.

The second electromagnetic force EMF2 is greater than the first electromagnetic force EMF1 and the fourth electromagnetic force EMF4 is greater than or equal to the first electromagnetic force EMF1 and less than the second electromagnetic force EMF2. Therefore, when a predetermined area on both sides of the carrier CR overlaps the discontinuous section DCS, the total of the second and fourth electromagnetic forces EMF2 and EMF4 of the electromagnet members EM overlapping the carrier CR The sum is set to be greater than the total sum of the first electromagnetic force EM1 of the electromagnet members EM overlapping the carrier CR when the carrier CR is disposed in each vacuum chamber.

The carrier CR is floated and transported by the electromagnet members EM generating the second and fourth electromagnetic forces EMF2 and EMF4.

4G and 4H, the carrier CR is transferred so that a predetermined area on the other side of the carrier CR overlaps the gate valve GV. That is, a predetermined area on the other side of the carrier CR may overlap with the discontinuous section DCS.

In this case, the electromagnet member EM overlapping the center C of the carrier CR among the electromagnet members EM overlapping the carrier CR under the control of the controller 60 similar to FIGS. 4B and 4C Generates a second electromagnetic force (EMF2).

In addition, among the electromagnet members EM overlapping with the carrier CR under the control of the controller 60, the electromagnet members EM that do not overlap with the center C of the carrier CR are the center of the carrier CR. The third electromagnetic force EMF3 gradually decreases as the distance from the electromagnet member EM overlaps with (C) increases.

When a predetermined area on the other side of the carrier CR overlaps the discontinuous section DCS, the total sum of the second and third electromagnetic forces EMF2 and EMF3 of the electromagnet members EM overlapping the carrier CR When the silver carrier CR is disposed in each vacuum chamber, it is set to be greater than the total sum of the first electromagnetic force EM1 of the electromagnet members EM overlapping the carrier CR.

The carrier CR is floated and transported by the electromagnet members EM generating the second and third electromagnetic forces EMF2 and EMF3.

The electromagnet members EM may not generate the second and third electromagnetic forces EMF2 and EMF3 regardless of the position of the carrier CR, and may generate only the first electromagnetic force EM1. In this case, when the carrier CR is transferred so that a predetermined area on one side of the carrier CR or a predetermined area on the other side overlaps with the discontinuous section DCS, the electromagnet members EM are in the discontinuous section DCS. As it is not placed, the force that pulls the carrier CR is weakened.

In addition, even if one side or the other side of the carrier CR overlaps with any one electromagnet member EM adjacent to the discontinuous section DCS, the electromagnet members EM are not disposed in the discontinuous section DCS, so the carrier CR You may not have enough power to pull it. In this case, a sagging phenomenon of the carrier CR may occur in which the carrier CR strikes downward in the discontinuous section DCS.

However, the deposition system 100 of the present invention may generate second, third, and fourth electromagnetic forces EMF2, EMF3, and EMF4 according to the position of the carrier CR to attract the carrier CR. . That is, depending on the position of the carrier CR, the deposition system 100 pulls the center of gravity, which is the center C of the carrier CR, with the second electromagnetic force EMF2, the largest electromagnetic force, or a discontinuous section DCS. The area of the carrier CR adjacent to is attracted by the second electromagnetic force EMF2, which is the largest electromagnetic force.

In addition, as described in FIGS. 4B to 4G, when a predetermined area of the carrier CR overlaps the discontinuous section DCS, the second and third electromagnet members EM overlapping with the carrier CR The total sum of the electromagnetic forces EMF2 and EMF3 and the total sum of the second and fourth electromagnetic forces EMF2 and EMF4 are electromagnet members overlapping with the carrier CR when the carrier CR is disposed in each vacuum chamber. It is set to be greater than the total sum of the first electromagnetic force EM1 of (EM).

In addition, the deposition system 100 sets the electromagnetic force around the second electromagnetic force (EMF2) to the third and fourth electromagnetic forces (EMF3, EMF4) that gradually decrease to reduce the deviation of the electromagnetic force that attracts the carrier CR. I can. As a result, the carrier CR may be transferred through a discontinuous section without sagging of the carrier CR.

As a result, the deposition system 100 of the present invention can prevent a sagging phenomenon of the carrier CR that transports the substrate SUB.

Referring to FIG. 4I, the carrier CR passes through the discontinuous section DCS and is disposed inside the fourth process chamber 30. The gate GAT may be closed after the carrier CR is transferred into the fourth process chamber 40.

In this case, similar to FIG. 4A, the electromagnet members EM overlapping with the carrier CR generate a first electromagnetic force EMF1, respectively. The carrier CR is floated and transported by the electromagnet members EM generating the first electromagnetic force EMF1.

5 is a schematic perspective view of a deposition system according to another embodiment of the present invention.

The deposition system 200 shown in FIG. 5 has the same configuration as the deposition system 100 shown in FIG. 1 except for the position of the gate valve GV. Therefore, only a configuration different from that of the deposition system 100 shown in FIG. 1 will be described below.

Referring to FIG. 5, the deposition system 200 includes a plurality of process chamber groups GP1, GP2, and GP3 and a plurality of gate valves GV1.GV2 disposed between the process chamber groups GP1, GP2, and GP3. Includes.

The process chamber groups GP1, GP2, and GP3 include a first process chamber group GP1 including a first process chamber 10, and a second process including second and third process chambers 20 and 30. A chamber group GP2 and a third process chamber group GP3 including the fourth and fifth process chambers 40 and 50 are included.

The gate valves GV1 and GV2 include a first gate valve GV1 and a second gate valve GV2. The first gate valve GV1 is disposed between the first process chamber group GP1 and the second process chamber group GP2 to be disposed between the first process chamber group GP1 and the second process chamber group GP2. CR) provides a transfer path.

The second gate valve GV2 is disposed between the second process chamber group GP2 and the third process chamber group GP3, and is disposed between the second process chamber group GP2 and the third process chamber group GP3. CR) provides a transfer path.

The region in which the first and second gate valves GV1 and GV2 are disposed is defined as a discontinuous section DCS. In the discontinuous section DCS, the carrier CR may be transferred, as described with reference to FIGS. 4B to 4H.

As a result, the deposition system 200 according to another embodiment of the present invention may prevent the carrier CR from transferring the substrate SUB from sagging.

As an exemplary embodiment, two gate valves GV1 and GV2 are illustrated in FIG. 5, but are not limited thereto, and more than two gate valves may be used in the deposition system. For example, the process chamber groups may include four process chamber groups, and any one vacuum chamber group may include the fourth and fifth process chambers 40 and 50. In this case, the gate valve is between the first process chamber 10 and the second process chamber 20, between the second process chamber 20 and the third process chamber 30, and between the third process chamber 30 and the third process chamber. It may be disposed between the 4 process chambers 40.

Further, the process chamber groups may include five process chamber groups, and each process chamber group may each include one process chamber. In this case, the gate valve is between the first process chamber 10 and the second process chamber 20, between the second process chamber 20 and the third process chamber 30, and between the third process chamber 30 and the fourth process chamber. It may be disposed between the process chamber 40 and between the fourth process chamber 40 and the fifth process chamber 50.

As described above, the region in which the gate valves are disposed is defined as a discontinuous section DCS, and the carrier CR in the discontinuous section DCS may be transported as described with reference to FIGS. 4B to 4H. .

Although described with reference to the above embodiments, those skilled in the art will understand that various modifications and changes can be made to the present invention within the scope not departing from the spirit and scope of the present invention described in the following claims. I will be able to. In addition, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention, and all technical ideas within the scope of the following claims and equivalents should be construed as being included in the scope of the present invention. .

100,200: evaporation system
10,20,30,40,50: first, second, third, fourth, and fifth process chambers
11,21,31,41,51: first, second, third, fourth, and fifth deposition sources
L: Lodging chamber UL: Unloading chamber
GV: gate valve MLM: magnetic levitation module
EM: Electromagnet member CR: Carrier
SUB: Substrate

Claims (14)

A plurality of process chamber groups arranged in a first direction;
A carrier moving between the process chamber groups;
At least one gate valve disposed between the process chamber groups to provide a passage for movement of the carrier between the process chamber groups;
A substrate attached to and transferred to the carrier and on which a deposition material is deposited; And
Including a plurality of magnetic levitation modules disposed to face the carrier in the process chamber groups to transfer the carrier by electromagnetic force,
Each of the magnetic levitation modules includes a plurality of electromagnet members generating the electromagnetic force,
The carrier includes a plurality of magnet members disposed to face the electromagnet members,
When the carriers are disposed inside each of the process chamber groups, the electromagnet members overlapping with the carriers each generate a first electromagnetic force,
When a predetermined area on one side of the carrier or a predetermined area on the other side overlaps with a discontinuous section defined as an area in which the gate valve is disposed, among the electromagnet members overlapping with the carrier, the electromagnet member overlaps with the center of the carrier Generates a second electromagnetic force greater than the first electromagnetic force,
Among the electromagnet members overlapping with the carrier, the electromagnet members not overlapping with the center portion of the carrier generate a third electromagnetic force gradually decreasing as the distance from the electromagnet member overlapping the center portion of the carrier increases. The method of claim 1,
Each of the process chamber groups includes a plurality of process chambers connected to each other in the first direction. The method of claim 2,
The carrier is transported in a floating state by the electromagnetic force of each of the electromagnet members and each of the magnet members. The method of claim 3,
Each of the electromagnet members includes a coil receiving a current to generate the electromagnetic force. delete The method of claim 3,
The third electromagnetic force is less than the second electromagnetic force and is greater than or equal to the first electromagnetic force. The method of claim 6,
When the carrier enters the discontinuous section and a predetermined area on both sides of the carrier overlaps a predetermined area of the process chambers, among the electromagnet members overlapping with the carrier, the electromagnet members adjacent to both sides of the discontinuous section respectively Generating the second electromagnetic force,
Among the electromagnet members overlapping with the carrier, the electromagnet members excluding the electromagnet members adjacent to both sides of the discontinuous section respectively generate a fourth electromagnetic force that gradually decreases as the distance from the electromagnet members adjacent to both sides of the discontinuous section increases and,
The fourth electromagnetic force is less than the second electromagnetic force and is greater than or equal to the first electromagnetic force. The method of claim 7,
The total sum of the second and third electromagnetic forces and the total sum of the second and fourth electromagnetic forces are each greater than the total sum of the first electromagnetic force. The method of claim 7,
Each of the magnetic levitation modules further comprises a position sensor disposed between the electromagnet members in a second direction crossing the first direction to detect the position of the carrier. The method of claim 9,
Further comprising a control unit for controlling the current provided to the electromagnet members in response to the position information of the carrier sensed by the position sensor,
The control unit provides a current corresponding to the first, second, third and fourth electromagnetic forces to the electromagnet members according to the position of the carrier. The method of claim 2,
A deposition source disposed below each of the process chambers to accommodate the deposition material deposited on the substrate, the substrate being disposed under the carrier so as to face the deposition source,
The magnetic levitation modules are disposed on the inside of each process chamber group to face the top of the carrier. The method of claim 1,
At least one of the process chamber groups includes a plurality of process chambers connected to each other in the first direction. The method of claim 1,
Each of the process chamber groups includes a process chamber. The method of claim 1,
The discontinuous section is less than or equal to 300mm deposition system.

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